Littérature scientifique sur le sujet « Metal oxide semiconductors, Complementary Design and construction »
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Articles de revues sur le sujet "Metal oxide semiconductors, Complementary Design and construction"
Sotner, Roman, Jan Jerabek, Ladislav Polak, Roman Prokop et Vilem Kledrowetz. « Integrated Building Cells for a Simple Modular Design of Electronic Circuits with Reduced External Complexity : Performance, Active Element Assembly, and an Application Example ». Electronics 8, no 5 (22 mai 2019) : 568. http://dx.doi.org/10.3390/electronics8050568.
Texte intégralBreslin, Catherine, et Adrian O'Lenskie. « Neuromorphic hardware databases for exploring structure–function relationships in the brain ». Philosophical Transactions of the Royal Society of London. Series B : Biological Sciences 356, no 1412 (29 août 2001) : 1249–58. http://dx.doi.org/10.1098/rstb.2001.0904.
Texte intégralAnusha, N., et T. Sasilatha. « Performance Analysis of Wide AND OR Structures Using Keeper Architectures in Various Complementary Metal Oxide Semiconductors Technologies ». Journal of Computational and Theoretical Nanoscience 13, no 10 (1 octobre 2016) : 6999–7008. http://dx.doi.org/10.1166/jctn.2016.5660.
Texte intégralRajendran, Selvakumar, Arvind Chakrapani, Srihari Kannan et Abdul Quaiyum Ansari. « A Research Perspective on CMOS Current Mirror Circuits : Configurations and Techniques ». Recent Advances in Electrical & ; Electronic Engineering (Formerly Recent Patents on Electrical & ; Electronic Engineering) 14, no 4 (17 juin 2021) : 377–97. http://dx.doi.org/10.2174/2352096514666210127140831.
Texte intégralKalagadda, B., N. Muthyala et K. K. Korlapati. « Performance Comparison of Digital Circuits Using Subthreshold Leakage Power Reduction Techniques ». Journal of Engineering Research [TJER] 14, no 1 (1 mars 2017) : 74. http://dx.doi.org/10.24200/tjer.vol14iss1pp74-84.
Texte intégralWang, Xiaochun, Meicheng Fu, Heng Yang, Jiali Liao et Xiujian Li. « Temperature and Pulse-Energy Range Suitable for Femtosecond Pulse Transmission in Si Nanowire Waveguide ». Applied Sciences 10, no 23 (26 novembre 2020) : 8429. http://dx.doi.org/10.3390/app10238429.
Texte intégralMizuno, Tomohisa, Naoki Mizoguchi, Kotaro Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima et Tsutomu Tezuka. « New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors : Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices ». Japanese Journal of Applied Physics 49, no 4 (20 avril 2010) : 04DC13. http://dx.doi.org/10.1143/jjap.49.04dc13.
Texte intégralChang, Wen-Teng, Hsu-Jung Hsu et Po-Heng Pao. « Vertical Field Emission Air-Channel Diodes and Transistors ». Micromachines 10, no 12 (6 décembre 2019) : 858. http://dx.doi.org/10.3390/mi10120858.
Texte intégralHeyns, M., et W. Tsai. « Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials ». MRS Bulletin 34, no 7 (juillet 2009) : 485–92. http://dx.doi.org/10.1557/mrs2009.136.
Texte intégralBanerjee, Writam. « Challenges and Applications of Emerging Nonvolatile Memory Devices ». Electronics 9, no 6 (22 juin 2020) : 1029. http://dx.doi.org/10.3390/electronics9061029.
Texte intégralThèses sur le sujet "Metal oxide semiconductors, Complementary Design and construction"
Bond, Steven Winfred. « Through-silicon circuit optical communications links ». Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15390.
Texte intégralTang, Wei 1976. « High-speed parallel optical receivers ». Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=103298.
Texte intégralParallel optical transceiver modules running at several gigabits per second are commercially available nowadays. Parallel optical receivers are one of the key components of parallel interconnected systems. In this work, we describe how a low-power parallel CMOS preamplifier IC and a deskew IC have been designed and fabricated through the IBM 0.13mum CMOS technology. The performances of three different transimpedance amplifier (TIA) topologies are compared experimentally. The best of the three TIAs shows a differential gain of 56.2dBO, 2.6GHz bandwidth, and less than -16dBm sensitivity with a bit-error-rate (BER) less than 10-12. The TIA consumes 2.5mW of power from a 1.2V supply while the channel power is 22mW with a 400mV pp differential output swing.
A novel method of accurately measuring the crosstalk power penalty with an on-chip PRBS generator is proposed and its implementation is described. The use of an on-chip PRBS generator to drive the dummy channels eliminates the data pattern dependence between the aggressors and the victim. The inevitable channel skew associated with parallel channels can be removed by a phase-locked loop (PLL) based deskew method. We investigated the skew compensation range of this method theoretically and our experimental results confirm our conclusion.
Various practical design and test techniques such as photodiode modeling, AC coupling, low-pass filtering and continuous skew generation, and their implementations, are discussed and implemented in this thesis.
Deshpande, Sandeep. « A cost quality model for CMOS IC design ». Thesis, This resource online, 1994. http://scholar.lib.vt.edu/theses/available/etd-12042009-020251/.
Texte intégralXiao, Haiqiao. « Design of Radio-Frequency Filters and Oscillators in Deep-Submicron CMOS Technology ». PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/5233.
Texte intégralNg, Chik-wai, et 吳植偉. « Design techniques of advanced CMOS building blocks for high-performance power management integrated circuits ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B45896926.
Texte intégralMule, Anthony Victor. « Volume grating coupler-based optical interconnect technologies for polylithic gigascale integrat ». Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/9447.
Texte intégralBlalock, Benjamin Joseph. « A 1-volt CMOS wide dynamic Range operational amplifier ». Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15441.
Texte intégralBhavnagarwala, Azeez Jenúddin. « Voltage scaling constraints for static CMOS logic and memory cirucits ». Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15401.
Texte intégralDong, Zhiwei. « Low-power, low-distortion constant transconductance Gm-C filters ». Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/25400.
Texte intégralMony, Madeleine. « Reprogrammable optical phase array ». Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=103276.
Texte intégralThis thesis presents a novel device that was designed to operate as an optical switch within the context of an AAPN network. The device is a Reprogrammable Optical Phase Array (ROPA), and the design consists of applying multiple electric fields of different magnitudes across an electro-optic material in order to create a diffractive optical element. The configuration of the electric fields can change to modify the properties of the diffractive device.
Such a device has a wide range of potential applications, and two different ROPA designs are presented. Both designs are optimized to function as 1xN optical switches. The switches are wavelength tunable and have switching times on the order of microseconds. The ROPA devices consist of two parts: a bulk electro-optic crystal, and a high-voltage CMOS chip for the electrical control of the device. The design, simulation, fabrication and testing of both the electrical and optical components of the devices are presented.
Livres sur le sujet "Metal oxide semiconductors, Complementary Design and construction"
Peluso, Vincenzo. Design of low-voltage low-power CMOS Delta-Sigma A/D converters. Boston : Kluwer Academic Publishers, 1999.
Trouver le texte intégralHogervorst, Ron. Design of low-voltage, low-power operational amplifier cells. Boston : Kluwer Academic Publishers, 1996.
Trouver le texte intégralCraninckx, J. Wireless CMOS frequency synthesizer design. Boston : Kluwer Academic Publishers, 1998.
Trouver le texte intégralNdjountche, Tertulien. CMOS analog integrated circuits : High speed and power efficient design. Boca Raton : Taylor & Francis, 2011.
Trouver le texte intégralWidmann, D. Technologie hochintegrierter Schaltungen. 2e éd. Berlin : Springer, 1996.
Trouver le texte intégralBaker, R. Jacob. CMOS circuit design, layout, and simulation. 2e éd. New York : IEEE Press, 2005.
Trouver le texte intégralBaker, R. Jacob. CMOS circuit design, layout, and simulation. New York : IEEE Press, 1997.
Trouver le texte intégralBaker, R. Jacob. CMOS circuit design, layout, and simulation. New York : IEEE Press, 1998.
Trouver le texte intégralBaker, R. Jacob. CMOS circuit design, layout, and simulation. 2e éd. Piscataway, NJ : IEEE Press, 2008.
Trouver le texte intégralJosʹe M. de la Rosa. Systematic design of CMOS switched-current bandpass sigma-delta modulators for digital communication chips. Boston : Kluwer Academic, 2002.
Trouver le texte intégralActes de conférences sur le sujet "Metal oxide semiconductors, Complementary Design and construction"
Gillet, Jean-Numa, Yann Chalopin et Sebastian Volz. « Atomic-Scale Three-Dimensional Phononic Crystals With a Lower Thermal Conductivity Than the Einstein Limit of Bulk Silicon ». Dans ASME 2008 Heat Transfer Summer Conference collocated with the Fluids Engineering, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/ht2008-56403.
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