Bibliographies thématiques / Magnetic Behaviour - Ultra-thin Epitaxial Films

Littérature scientifique sur le sujet « Magnetic Behaviour - Ultra-thin Epitaxial Films »

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Publié le 7 septembre 2023

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Articles de revues sur le sujet "Magnetic Behaviour - Ultra-thin Epitaxial Films"

YANG, T. R., G. ILONCA, V. TOMA, P. BALINT et M. BODEA. « MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS ». International Journal of Modern Physics B 21, n^o 01 (10 janvier 2007) : 127–32. http://dx.doi.org/10.1142/s0217979207035923.

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The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

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Fähnle, Manfred, et Matej Komelj. « Second-order magnetoelastic effects : From the Dirac equation to the magnetic properties of ultrathin epitaxial films for magnetic thin-film applications ». International Journal of Materials Research 93, n^o 10 (1 octobre 2002) : 970–73. http://dx.doi.org/10.1515/ijmr-2002-0168.

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Abstract It has always been the endeavour of Professor Kronmüller to combine various methods in order to attain a comprehensive understanding of a physical phenomenon on all relevant scales. In this spirit, we combine the phenomenological nonlinear theory of magnetoelasticity with the relativistic density functional electron theory to describe the magnetoelastic behaviour of epitaxial films. We explain the two already performed cantilever bending beam experiments on the magnetoelasticity and underpin the assumption that second-order magnetoelastic effects are very important for epitaxial Fe films. A complete set of six cantilever experiments is introduced which allows to calculate the intrinsic first- and second-order magnetoelastic constants for cubic materials, and these constants are calculated ab initio for Fe, face-centred cubic Co, Ni, Ni3Fe and CsCl-type CoFe.

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Sando, D., A. Agbelele, C. Daumont, D. Rahmedov, W. Ren, I. C. Infante, S. Lisenkov et al. « Control of ferroelectricity and magnetism in multi-ferroic BiFeO 3 by epitaxial strain ». Philosophical Transactions of the Royal Society A : Mathematical, Physical and Engineering Sciences 372, n^o 2009 (28 février 2014) : 20120438. http://dx.doi.org/10.1098/rsta.2012.0438.

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Recently, strain engineering has been shown to be a powerful and flexible means of tailoring the properties of ABO 3 perovskite thin films. The effect of epitaxial strain on the structure of the perovskite unit cell can induce a host of interesting effects, these arising from either polar cation shifts or rotation of the oxygen octahedra, or both. In the multi-ferroic perovskite bismuth ferrite (BiFeO 3 –BFO), both degrees of freedom exist, and thus a complex behaviour may be expected as one plays with epitaxial strain. In this paper, we review our results on the role of strain on the ferroic transition temperatures and ferroic order parameters. We find that, while the Néel temperature is almost unchanged by strain, the ferroelectric Curie temperature strongly decreases as strain increases in both the tensile and compressive ranges. Also unexpected is the very weak influence of strain on the ferroelectric polarization value. Using effective Hamiltonian calculations, we show that these peculiar behaviours arise from the competition between antiferrodistortive and polar instabilities. Finally, we present results on the magnetic order: while the cycloidal spin modulation present in the bulk survives in weakly strained films, it is destroyed at large strain and replaced by pseudo-collinear antiferromagnetic ordering. We discuss the origin of this effect and give perspectives for devices based on strain-engineered BiFeO 3 .

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Kurdi, Samer, Yuya Sakuraba, Keisuke Masuda, Hiroo Tajiri, Bhaskaran Nair, Guillaume F. Nataf, Mary E. Vickers et al. « Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film ». Journal of Physics D : Applied Physics 55, n^o 18 (10 février 2022) : 185305. http://dx.doi.org/10.1088/1361-6463/ac4e32.

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Abstract In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn2FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L21 B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L21 B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L21 B structure. To realize a half-metallic Mn2FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.

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Li, Yongkuan, Xinxing Liu, Dan Wen, Kai Lv, Gang Zhou, Yue Zhao, Congkang Xu et Jiangyong Wang. « Growth of c-plane and m-plane aluminium-doped zinc oxide thin films : epitaxy on flexible substrates with cubic-structure seeds ». Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, n^o 2 (19 mars 2020) : 233–40. http://dx.doi.org/10.1107/s2052520620002668.

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Manufacturing high-quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c-plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic-structure seeds, it was possible to fabricate polar c-plane and nonpolar m-plane aluminium-doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c-plane and m-plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm-thick m-plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c-plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c-plane than in the m-plane AZO film results from the electrical polarity along the c-axis. The resistivity of the c-plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high-performance flexible ZnO devices.

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Venzke, S., R. B. van Dover, Julia M. Phillips, E. M. Gyorgy, T. Siegrist, C.-H. Chen, D. Werder et al. « Epitaxial growth and magnetic behavior of NiFe2O4 thin films ». Journal of Materials Research 11, n^o 5 (mai 1996) : 1187–98. http://dx.doi.org/10.1557/jmr.1996.0153.

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Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90°-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 °C consist of ∼300 Å diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 °C yields films that are essentially single crystal. The magnetic properties of the films are strongly affected by the structural changes; unannealed films are not magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, single crystal NiFe2O4. Homoepitaxial films grown at 400 °C also are essentially single crystal.

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Wang, Weiyuan, Jiyu Fan, Huan Zheng, Jing Wang, Hao Liu, Caixia Wang, Chunlan Ma, Langsheng Ling, Jingtao Xu et Hao Yang. « Two conductive mechanisms in LaMnO3 thin film : Adiabatic and nonadiabatic small polaronic hopping ». Modern Physics Letters B 35, n^o 19 (24 juin 2021) : 2150310. http://dx.doi.org/10.1142/s0217984921503103.

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We have presented the structural, surface morphology, magnetic and resistivity data for perovskite LaMnO3 epitaxial thin films which are fabricated on well-oriented (001) LaAlO3 substrates by pulsed laser deposition technique. X-ray diffraction [Formula: see text]–[Formula: see text] linear scans and reciprocal space mapping measurement confirm that the out-of-plane and in-plane epitaxial relationship are LMO(001)/LAO(001) and LMO(110)/LAO(110), respectively. Surface roughness determined by atomic force microscopy was no more than 0.3 nm. In the whole studied temperature range, all films only show a paramagnetic behavior instead of any magnetic phase transitions. Correspondingly, the electron transport behaviors always exhibit an insulting state as the temperature changes from high to low. However, we find that none of theoretical models can individually be used to understand their conductive mechanisms. Further studies indicated that charge carries of high and low temperature region obey adiabatic and nonadiabatic small polaronic hopping mechanisms, respectively. This finding offers new ways of exploiting the abnormal ferromagnetism in LaMnO3 multilayer thin films.

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ILONCA, G., A. V. POP, T. JURCUT, E. MOCOCEAN, C. BEIUSEANU, C. LUNG, G. STIUFIUC, R. STIUFIUC, M. YE et R. DELTOUR. « MAGNETIC FIELD AND TEMPERATURE DEPENDENCE OF THERMALLY ACTIVATED DISSIPATION IN EPITAXIAL THIN FILMS OF YBa2 (Cu1-xZnx)3O7-d ». Modern Physics Letters B 15, n^o 22 (20 septembre 2001) : 949–57. http://dx.doi.org/10.1142/s0217984901002786.

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The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented YBa 2( Cu 1-x Zn x)3 O 7-d thin films has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μ0H) = U0(1 - T/T c )mHn with exponent m = 1.6 ± 0.02 - 1.3 ± 0.02 and the field scaling 1/μ0H and - ln μ0H for thick films and ultrathin films, respectively. The results are discussed taking account of the influence of the Zn substitution on the flux pinning in epitaxial YBa 2( Cu 1-x Zn x)3 O 7-d thin films.

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Sarkar, Tanushree, Suja Elizabeth et P. S. Anil Kumar. « Growth of ordered and disordered epitaxial thin films of Lu2MnNiO6 using (0 0 1)-LaAlO3 and (0 0 1)-SrTiO3 substrates : Observation of six monoclinic in-plane twin variants and glassy magnetic behaviour ». Journal of Magnetism and Magnetic Materials 521 (mars 2021) : 167514. http://dx.doi.org/10.1016/j.jmmm.2020.167514.

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Boukelkoul, M., M. Kharoubi et A. Haroun. « Magnetic and magneto-optical properties of ultrathin films of iron epitaxied on iridium (001) ». Canadian Journal of Physics 86, n^o 12 (1 décembre 2008) : 1421–26. http://dx.doi.org/10.1139/p08-103.

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We have theoretically studied the structural, magnetic, and magneto-optical behaviours of Fe ultra-thin films pseudomorphically epitaxied on semi-infinite Ir(001). The magnetic film crystallizes in the body-centered tetragonal (bct) structure with a tetragonality ratio 1.21. The new crystalline structure of iron in the magnetic film enhances the magnetic properties and a correlation between the interlayer spacing and the magnetic moment is found. The calculation of the magnetic properties shows a ferromagnetic interlayer coupling. The polar magneto-optical Kerr effect (P-MOKE) spectra are calculated over a photon energy range extended to 10~eV. The microscopic origin of the most interesting features is explained from interband transitions in various regions of the Brillouin zone.PACS Nos.: 78.20.Bh, 78.20.Ls

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Plus de sources

Thèses sur le sujet "Magnetic Behaviour - Ultra-thin Epitaxial Films"

Arnott, Michael. « Studies of ultra-thin epitaxial Fe/Cu(100) films ». Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386336.

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Amiri-Hezaveh, A. « Photelectron spectroscopy of ultra-thin epitaxial f.c.c. magnetic films of iron and cobalt ». Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233668.

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Constantino, Jennifer Anne [Verfasser], et Laurens W. [Gutachter] Molenkamp. « Characterization of Novel Magnetic Materials : Ultra-Thin (Ga,Mn)As and Epitaxial-Growth MnSi Thin Films / Jennifer Anne Constantino. Gutachter : Laurens W. Molenkamp ». Würzburg : Universität Würzburg, 2013. http://d-nb.info/1102822884/34.

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Karhu, Eric. « Structural and Magnetic Properties of Epitaxial MnSi(111) Thin Films ». 2012. http://hdl.handle.net/10222/14428.

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MnSi(111) films were grown on Si(111) substrates by solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) to determine their magnetic structures. A lattice mismatch of -3.1% causes an in-plane tensile strain in the film, which is partially relaxed by misfit dislocations. A correlation between the thickness dependence of the Curie temperature (TC) and strain is hypothesized to be due to the presence of interstitial defects. The in-plane tensile strain leads to an increase in the unit cell volume that results in an increased TC as large as TC = 45 K compared to TC = 29.5 K for bulk MnSi crystals. The epitaxially induced tensile stress in the MnSi thin films creates an easy-plane uniaxial anisotropy. The magnetoelastic coefficient was obtained from superconducting quantum interference device (SQUID) magnetometry measurements combined with transmission electron microscopy (TEM) and x-ray diffraction (XRD) data. The experimental value agrees with the coefficient determined from density functional calculations, which supports the conclusion that the uniaxial anisotropy originates from the magnetoelastic coupling. Interfacial roughness obscured the magnetic structure of the SPE films, which motivated the search for a better method of film growth. MBE grown films displayed much lower interfacial roughness that enabled a determination of the magnetic structure using SQUID and polarized neutron reflectometry (PNR). Out-of-plane magnetic field measurements on MBE grown MnSi(111) thin films on Si(111) substrates show the formation of a helical conical phase with a wavelength of 2?/Q = 13.9 ± 0.1 nm. The presence of both left-handed and right-handed magnetic chiralities is found to be due to the existence of inversion domains that result from the non-centrosymmetric crystal structure of MnSi. The magnetic frustration created at the domain boundaries explains an observed glassy behaviour in the magnetic response of the films. PNR and SQUID measurements of MnSi thin films performed in an in-plane magnetic field show a complex magnetic behaviour. Experimental results combined with theoretical results obtained from a Dzyaloshinskii model with an added easy-plane uniaxial anisotropy reveals the existence of numerous magnetic modulated states that do not exist in bulk MnSi. It is demonstrated in this thesis that modulated chiral magnetic states can be investigated with epitaxially grown MnSi(111) thin films on insulating Si substrates, which offers opportunities to investigate spin-dependent transport in chiral magnetic heterostructures based on this system.

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Xing, Guoqiang. « Surface magnetic order of ultra thin epitaxial vanadium films on silver ». Thesis, 1988. http://hdl.handle.net/1911/13331.

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Vanadium ultra-thin (1-7 monolayers) films are deposited epitaxially on well-defined single crystalline Ag(100) substrate. The topmost layers of the films are studied by electron capture spectroscopy(ECS). ECS is a surface-sensitive technique for the investigation of magnetic order existing at surfaces. It is found that the topmost atomic layer of V(100) films are ferromagnetic for all film thicknesses, in contrast to bulk vanadium which is paramagnetic at all temperatures. The films of thickness of 5 monolayers possess a surface Curie temperature T$\sb{\rm cs}$ = 475.1 K, and the critical behavior of the magnetization of the films is identical to that predicted by the well-known two-dimensional Ising Model of ferromagnet.

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Constantino, Jennifer Anne. « Characterization of Novel Magnetic Materials : Ultra-Thin (Ga,Mn)As and Epitaxial-Growth MnSi Thin Films ». Doctoral thesis, 2013. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-90578.

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The study of magnetic phases in spintronic materials is crucial to both our fundamental understanding of magnetic interactions and for finding new effects for future applications. In this thesis, we study the basic electrical and magnetic transport properties of both epitaxially-grown MnSi thin films, a helimagnetic metal only starting to be developed within our group, and parabolic-doped ultra-thin (Ga,Mn)As layers for future studies and applications
Um einerseits ein fundamentales Verständnis magnetischer Wechselwirkungen zu erhalten und andererseits neue Effekte für zukünftige Anwendungen zu finden, ist es entscheidend, magnetische Phasen spintronischer Materialien zu untersuchen. In dieser Arbeit fokussieren wir uns auf grundlegende elektrische und magnetische Transporteigenschaften zweier Materialsysteme. Das sind zum Ersten ultradünne (Ga,Mn)As Filme mit parabolischen Dotierprofilen, und zum Zweiten epitaktisch gewachsene Dünnschichten aus MnSi, einem helimagnetischen Metal, dessen Entwicklung seit Kurzem in unserer Gruppe vorangetrieben wird

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Actes de conférences sur le sujet "Magnetic Behaviour - Ultra-thin Epitaxial Films"

Chattopadhyay, S., et T. K. Nath. « Unusual magnetoresistive behavior of epitaxial Zn(Fe, Al)O dilute magnetic semiconducting thin film ». Dans SOLID STATE PHYSICS : Proceedings of the 56th DAE Solid State Physics Symposium 2011. AIP, 2012. http://dx.doi.org/10.1063/1.4710448.

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Rapports d'organisations sur le sujet "Magnetic Behaviour - Ultra-thin Epitaxial Films"

Morton, S., J. Tobin, M. Spangenberg, J. Neal, T. Shen, G. Waddill, J. Matthew et al. Magnetic properties of ultra thin epitaxial Fe films on GaAs(001). Office of Scientific and Technical Information (OSTI), octobre 2003. http://dx.doi.org/10.2172/15009722.

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