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Littérature scientifique sur le sujet « Lateral heterostructures »

Auteur : Grafiati

Publié le 11 janvier 2025

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Articles de revues sur le sujet "Lateral heterostructures"

Guha, Puspendu, Joon Young Park, Janghyun Jo, Yunyeong Chang, Hyeonhu Bae, Rajendra Kumar Saroj, Hoonkyung Lee, Miyoung Kim et Gyu-Chul Yi. « Molecular beam epitaxial growth of Sb₂Te₃–Bi₂Te₃ lateral heterostructures ». 2D Materials 9, n^o 2 (31 janvier 2022) : 025006. http://dx.doi.org/10.1088/2053-1583/ac421a.

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Abstract We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed laterally on the graphene in an epitaxial manner. The interface between Bi2Te3 and Sb2Te3 from planar and cross-sectional views was studied by the aberration-corrected (C s-corrected) high-angle annular dark-field scanning transmission electron microscope technique. The cross-sectional electron microscopy investigation shows no wetting layer of Sb2Te3 on Bi2Te3, corroborating perfect lateral heterostructure formation. In addition, we investigated the topological properties of Sb2Te3–Bi2Te3 lateral heterostructures using first-principles calculations.

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Zhang, Jianzhi, Hongfu Huang, Junhao Peng, Chuyu Li, Huafeng Dong, Sifan Kong, Yiyuan Xie, Runqian Wu, Minru Wen et Fugen Wu. « A Cost-Effective Long-Wave Infrared Detector Material Based on Graphene@PtSe2/HfSe2 Bidirectional Heterostructure : A First-Principles Study ». Crystals 12, n^o 9 (2 septembre 2022) : 1244. http://dx.doi.org/10.3390/cryst12091244.

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The Graphene@PtSe2 heterostructure is an excellent long-wave infrared detection material. However, the expensive cost of PtSe2 prevents its widespread use in infrared detection. In this paper, Hf was used to partially replace Pt to form Graphene@(PtSe2)n(HfSe2)4−n (n = 1, 2, and 3) bidirectional heterostructures consisting of graphene and lateral PtSe2/HfSe2 composites based on first-principles calculations. Then, the new bidirectional heterostructures were compared with heterostructures formed by graphene with pure MSe2 (M = Pt, Hf). It was found that the band gaps of the bidirectional heterostructures were between those of Graphene@PtSe2 and Graphene@HfSe2. Among these heterostructures, the Graphene@(PtSe2)3(HfSe2)1 bidirectional heterostructure has almost the same optical absorption properties in the infrared wavelength region of 1.33~40 µm as the Graphene@PtSe2 heterostructure, and it improves the absorption in the near-infrared wavelength region of 0.75~1.33 µm. Such a designment may bring the material costs down (since PtSe2 costs approximately five times more than HfSe2). This study on the designment of the bidirectional Graphene@(PtSe2)3(HfSe2)1 heterostructure also illustrates a cost-effective design method for Pt-based IR detectors.

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Wan, Li-Kai, Yi-Xuan Xue, Jin-Wu Jiang et Harold S. Park. « Machine learning accelerated search of the strongest graphene/h-BN interface with designed fracture properties ». Journal of Applied Physics 133, n^o 2 (14 janvier 2023) : 024302. http://dx.doi.org/10.1063/5.0131576.

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Two-dimensional lateral heterostructures exhibit novel electronic and optical properties that are induced by their in-plane interface for which the mechanical properties of the interface are important for the stability of the lateral heterostructure. Therefore, we performed molecular dynamics simulations and developed a convolutional neural network-based machine learning model to study the fracture properties of the interface in a graphene/hexagonal boron nitride lateral heterostructure. The molecular dynamics (MD) simulations show that the shape of the interface can cause an 80% difference in the fracture stress and the fracture strain for the interface. By using 11 500 training samples obtained with help of high-cost MD simulation, the machine learning model is able to search out the strongest interfaces with the largest fracture strain and fracture stress in a large sample space with over 150 000 structures. By analyzing the atomic configuration of these strongest interfaces, we disclose two major factors dominating the interface strength, including the interface roughness and the strength of the chemical bond across the interface. We also explore the correlation between the fracture properties and the thermal conductivity for these lateral heterostructures by examining the bond type and the shape of the graphene/hexagonal boron nitride interface. We find that interfaces comprised of stronger bonds and smoother zigzag interfaces can relieve the abrupt change of the acoustic velocity, leading to the enhancement of the interface thermal conductivity. These findings will be valuable for the application of the two-dimensional lateral heterostructure in electronic devices.

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Liu, Xiaolong, et Mark C. Hersam. « Borophene-graphene heterostructures ». Science Advances 5, n^o 10 (octobre 2019) : eaax6444. http://dx.doi.org/10.1126/sciadv.aax6444.

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Integration of dissimilar two-dimensional (2D) materials is essential for nanoelectronic applications. Compared to vertical stacking, covalent lateral stitching requires bottom-up synthesis, resulting in rare realizations of 2D lateral heterostructures. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for 2D heterostructures, although suitable synthesis conditions have not yet been demonstrated. Here, we report lateral and vertical integration of borophene with graphene. Topographic and spatially resolved spectroscopic measurements reveal nearly atomically sharp lateral interfaces despite imperfect crystallographic lattice and symmetry matching. In addition, boron intercalation under graphene results in rotationally commensurate vertical heterostructures. The rich bonding configurations of boron suggest that borophene can be integrated into a diverse range of 2D heterostructures.

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Малевская, А. В., Н. Д. Ильинская et В. М. Андреев. « Разработка методов жидкостного травления разделительной меза-структуры при создании каскадных солнечных элементов ». Письма в журнал технической физики 45, n^o 24 (2019) : 14. http://dx.doi.org/10.21883/pjtf.2019.24.48795.17953.

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Investigation of the post-growth technique for fabricating multijunction solar sells based on the GaInP/GaAs/Ge heterostructure has been carried out. Investigated were methods of liquid chemical and electro-chemical etching of heterostructure layers. Technology for creating the separation mesa-structure has been developed. The improvement of the surface quality and of the profile of the mesa lateral side for heterostructures of different layer content has been achieved.

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Давыдов, С. Ю. « Простые модели латеральных гетероструктур ». Физика твердого тела 60, n^o 7 (2018) : 1389. http://dx.doi.org/10.21883/ftt.2018.07.46129.015.

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AbstractGeneral analytical expressions for densities of states of a lateral heterostructure, formed by the contact of two square semi-infinite lattices with single-band and two-band spectra, were obtained in the tight-binding approximation by the Green’s function method. The semi-elliptical density of states was used for numerical estimates, and the model of two interacting dimers was proposed to estimate the charge transfer. Application of this approach to description of lateral epitaxial and graphene-like heterostructures is discussed.

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Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang et al. « Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy ». Science Advances 2, n^o 4 (avril 2016) : e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

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Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

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Davydov, S. Yu. « Simple Models of Lateral Heterostructures ». Physics of the Solid State 60, n^o 7 (juillet 2018) : 1405–12. http://dx.doi.org/10.1134/s1063783418070089.

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Wang, Zixuan, Wenshuo Xu, Benxuan Li, Qiaoyan Hao, Di Wu, Dianyu Qi, Haibo Gan, Junpeng Xie, Guo Hong et Wenjing Zhang. « Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils ». Nanomaterials 12, n^o 10 (16 mai 2022) : 1696. http://dx.doi.org/10.3390/nano12101696.

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Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS2/MoS2 vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H2). We find that lateral growth is favored without H2, whereas vertical growth mode can be switched on by introducing 8–10 sccm H2. In addition, the areal coverage of the WS2/MoS2 vertical heterostructures is tunable in the range of 12–25%. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) results demonstrate the quality and absence of cross-contamination of the as-grown heterostructures. Furthermore, we investigate the effects of the H2 flow rate on the morphology of the heterostructures. These pave the way to develop unprecedented 2D heterostructures towards applications in (opto)electronic devices.

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Alharbi, Safia Abdullah R., Kazi Jannatul Tasnim et Ming Yu. « The first-principles study of structural and electronic properties of two-dimensional SiC/GeC lateral polar heterostructures ». Journal of Applied Physics 132, n^o 18 (14 novembre 2022) : 184301. http://dx.doi.org/10.1063/5.0127579.

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Two-dimensional (2D) lateral polar heterostructures, constructed by seamlessly stitching 2D polar materials, exhibit unique properties triggered by the in-plane charge transfer between different elements in each domain. Our first-principles study of 2D SiC/GeC lateral polar heterostructures has unraveled their interesting characteristics. The local strain induced by a lattice mismatch leads to an artificial uniaxial strain along the interface. The synergistic effect of such uniaxial strain, the microstructure of interface, and the width of domains modulates the feature of the bandgap with an indirect bandgap nature in armchair lateral heterostructures and a direct bandgap nature in zigzag lateral heterostructures. The bandgap monotonically decreases with increasing the width of domains, showing its tunability. Furthermore, the valence band maximum is found to be mainly contributed from C-2 p orbitals located at both GeC and SiC domains, and the conduction band minimum is mainly contributed from Ge-4 p orbitals located at the GeC domain, implying that most excited electrons prefer to stay at the GeC domain of the SiC/GeC lateral polar heterostructures. Interestingly, a net charge transfer from the SiC domain to the GeC domain was found, resulting in a spontaneous lateral p–n junction, and there is a net charge redistribution at the interfacial region leading to a built-in electric field which is expected to reduce the carrier recombination losses, implying the promising application for visible light photocatalyst, photovoltaics, and water splitting to achieve clean and renewable energy.

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Thèses sur le sujet "Lateral heterostructures"

Vallis, Stuart Lawrie. « Lateral and longitudinal surface superlattices on shallow GaAs heterostructures ». Thesis, University of Glasgow, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320844.

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Lai, Andrew P. (Andrew Pan). « Investigation of lateral gated quantum devices in Si/SiGe heterostructures ». Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/83775.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 73-75).
Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state qubits. The initial approach towards creating controllable Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterostructures provides a parallel conduction path, which prevents one from creating controllable quantum dots. Instead, it may be more favorable to supply electrons in the 2DEG through capactive gating, instead of a delta doping layer. We therefore discuss efforts to fabricate Si/SiGe quantum dots from undoped heterostructures and the difficulties encountered. A new method for fabricating ohmics in undoped heterostructures is discussed. We also discuss parallel conduction which occurs in the Si cap layer of these undoped heterostructures, which appears to be a major obstacle towards achieving workable devices in undoped Si/SiGe heterostructures.
by Andrew P. Lai.
S.M.

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Deborde, Jean-Laurent. « Lateral electron tunneling spectroscopy between low-dimensional electron systems in GaAs,AlGaAs heterostructures ». Tönning Lübeck Marburg Der Andere Verl, 2009. http://d-nb.info/995773491/04.

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Maharjan, Nikesh. « Electronic band engineering of Transition metal dichalcogenides : First Principles Calculation ». OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1661.

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Based on first principles Density Functional Theory calculations, we have investigated for possible paths for engineering electronic band structure of Transition Metal Dichalco- genides (TMDs). We have considered two approaches which have shown to be promising for engineering electronic bands of TMDs: substitutional chemical doping and heterostruc- turing. All the calculations are done using first principles Density Functional Theory as it is implemented in Quantum Espresso package. Two possible substitutional doping meth- ods for MoS2 are considered in our calculations; cation doping where Mo is substituted by metal atoms and anion doping where Nitrogen and halogen group atoms take the posi- tion of S-sites. We observe the n-type characteristics for halogen group doping and p-type characteristics for Nitrogen group doping at S site. Similarly, we observe these bipolar characteristics when substituted by the transition metal elements (4d elements in the peri- odic table) at Mo site. Our results on doping monolayer MoS2 are in agreement with those results obtained by Dolui et al. for similar systems. Our work is extended to explore the effect of substitutional doping in bilayer MoS2. We observe the promising bipolar char- acteristics on doping while the magnitude of the band gap decreases upon the controlled S-site doping with F and As. In the second part, we considered two types of heterostructuring; Van der Waals heterostructures, and lateral heterostructures. In Van der Waals heterostructures, a direct band gap is observed with a physical separation of charges into two layers from orbital isosurface plots. We present a brief overview of the folding of energy bands in supercell approach. Using heterogeneous supercell approach, we studied the electronic properties of a mixed system of MoS2 -WS2 . The separation of the charges into the two sections shows that our MoS2 -WS2 in-plane heterostructure shows a potential for a pn junction. These systematic studies of the doped and heterostructures of TMDs can be useful for device applications.

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Graf, Davy. « Electrons in reduced dimensions : from finite lateral superlattices in AlGaAs heterostructures to few-layer graphene / ». Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17241.

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Bradford, Jonathan. « Growth and characterisation of two-dimensional materials and their heterostructures on sic ». Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/134400/1/Jonathan_Bradford_Thesis.pdf.

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Atomically thin two-dimensional materials and their hybrids represent an elegant approach to designing and synthesizing functional nanomaterials and are expected to find applications across a broad range of new technologies. This project explored scalable synthesis of various two-dimensional layered materials and their hybrid counterparts on silicon carbide, an industrially relevant device substrate. It demonstrates the integration of graphene, hexagonal boron nitride and transition metal dichalcogenide layers which were characterised by high resolution scanning probe microscopy and electron spectroscopy. The procedures developed in this work are expected to facilitate a route towards large-scale synthesis of novel nanoscale devices directly on-chip.

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Serrano, richaud Elisa. « Modelling electronic and optical properties of 2D heterostructures ». Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP121.

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Le graphène (Gr) et le nitrure de bore hexagonal (hBN) ont un paramètre de réseau similaire (décalage de ~1,5 %) et des propriétés différentes : le Gr est un métal connu pour sa conductivité élevée et le hBN est un isolant à grand écart (~6eV) avec une forte émission d'UV. En raison de ces deux remarques, ils sont des candidats parfaits pour être empilés côte à côte dans une hétérostructure latérale au lieu d'être empilés l'un sur l'autre dans une hétérostructure verticale plus courante. Dans cette thèse, je m'intéresserai à la modélisation des propriétés électroniques et optiques des hétérostructures latérales composées de nanorubans successifs de graphène et de nitrure de bore (AGBN). Cependant, lors de la synthèse de ce type d'hétérostructures, des défauts, tels que des rugosités ou des défauts non-hexagonaux, peuvent apparaître à l'interface et affecter les propriétés des AGBN.Dans la première partie de la thèse, je combinerai des techniques ab-initio telles que la théorie de la fonctionnelle de la densité (DFT) et un modèle perturbatif de liaison étroite (TB) pour étudier la sensibilité opposée et complémentaire de la largeur de la fente des nanorubans armchair Gr et hBN isolés (AGNR et ABNNR) en fonction de différents stimuli.Dans les parties suivantes, je présenterai la structure électronique de l'AGBN réalisée avec la DFT et le spectre optique calculé par GW et l'équation de Bethe-Salpeter (BSE). Je passerai des caractéristiques générales, comme la structure de bande, à l'explication détaillée du rôle de chaque matériau et du confinement caractéristique de l'exciton dans la partie Gr des hétérostructures.Parallèlement à cette étude, je vais paramétrer un modèle TB semi-empirique et fixer ses limites de validité pour décrire le spectre d'absorption de l'AGBN dans l'approximation des particules indépendantes. Par conséquent, je dois établir une correspondance entre les pics excitoniques sur les spectres d'absorption BSE et les transitions dans les spectres IP, ce qui nous permettra d'estimer les effets excitoniques à partir des spectres TB IP. En particulier, cette approche sera utilisée dans la dernière partie de la thèse pour caractériser l'impact d'une faible rugosité à l'interface ou de défauts non-hexagonaux comme les Stone-Wales ou les divacances
Graphene (Gr) and hexagonal boron nitride (hBN) have a similar lattice parameter (~1.5% mismatch) and different properties , Gr is a metal known by its high conductivity and hBN is a large gap insulator ~6eV) with a strong UV emission. Due to these two remarks, they are perfect candidates to be stacked side-by-side in a lateral heterostructures instead of one of the top of the other in a more common vertical heterostructure. In this thesis I will be interested at modelling the electronic and optical properties of lateral heterostructures composed of successive armchair graphene and boron nitride nanoribbons (AGBN). However, during the synthesis of this kind of heterostructures defects, such as roughness or non-hexagonal defect, may appear at the interface affecting to the properties of AGBN.In the first part of the thesis, will combine ab-initio techniques such a density functional theory (DFT) and a perturbative tight-binding (TB) modem to study the opposite and complementary sensitivity of the gapwidth of isolated Gr and hBN armchair nanoribbons (AGNR and ABNNR) upon different stimuli.In the next parts I will present the electronic structure of AGBN carry out with DFT and optical spec-trum calculated by GW and the Bethe-Salpeter equation (BSE). I will revise from the general features, like the band structure, to explaining in detail the role of each material and the characteristic confining of the exciton in the Gr part of the heterostructures.Parallel to this study, I will parametrise a semi-empirical TB model and set its limits of validity to de-scribe the absorption spectrum of AGBN in the independent-particle approximation. Therefore, I have to set a correspondence between excitonic peaks on the BSE absorption spectra and transitions in IP spec-tra will allow us to estimate excitonic effects from the TB IP spectra. In particular, this approach will be used in the last part of the thesis to finally characterise the impact of weak roughness at the interface or non-hexagonal defects like Stone-Wales or divacancies

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Soucail, Bernard. « Contributions a l'etude des changements de dimensionnalite induits par des champs exterieurs ou par un confinement lateral dans les heterostructures de semiconducteurs iii-v ». Paris 6, 1990. http://www.theses.fr/1990PA066693.

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Nos travaux recents ont montre l'interet des superreseaux de semiconducteurs pour etudier le mouvement des electrons dans une structure periodique en presence de champ electrique. En effet, contrairement aux materiaux massifs, les superreseaux ont des parametres structuraux (periode, largeur de bande electronique) qui permettent une observation des phenomenes prevus theoriquement en appliquant des champs electriques relativement faibles: les etats propres devienne localises (echelle de wannier-stark), ce qui se manifeste par un decalage vers le bleu du seuil d'absorption du superreseau. L'adjonction d'un champ magnetique perpendiculairement au plan des couches permet de quantifier le mouvement dans ce plan sans influer sur le mouvement le long de l'axe de croissance. Ainsi suivant les champs appliques, le superreseau peut se comporter comme une structure 3d, 2d, 1d ou 0d. Les spectres d'absorption ont permis de mettre en evidence les modifications de la densite d'etat, et aussi l'importance des effets excitoniques dans les transitions optiques. Pour mesurer directement les effets du champ electrique, nous avons egalement etudie la possibilite d'observer la luminescence intrabande entre niveaux de wannier, ce qui peut etre interprete comme une preuve directe de l'existence d'oscillateurs de bloch. Enfin, nous presentons une etude de nouvelles structures unidimensionnelles et sans dimension. Les progres de la technologie permettent de fabriquer des lignes quantiques et des boites quantiques de largeur inferieure a 1000 a et les resultats d'experiences d'optique presentes dans cette these montrent clairement des effets dus au confinement lateral dans ces structures

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Lee, Sunyoung. « Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs ». Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149095133.

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Piotrowicz, Pawel Jan Andrzej. « Fabrication and measurement of laterally confined double barrier heterostructures with wide wells ». Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627421.

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Livres sur le sujet "Lateral heterostructures"

Horing, Norman J. Morgenstern. Retarded Green’s Functions. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0005.

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Chapter 5 introduces single-particle retarded Green’s functions, which provide the probability amplitude that a particle created at (x, t) is later annihilated at (x′,t′). Partial Green’s functions, which represent the time development of one (or a few) state(s) that may be understood as localized but are in interaction with a continuum of states, are discussed and applied to chemisorption. Introductions are also made to the Dyson integral equation, T-matrix and the Dirac delta-function potential, with the latter applied to random impurity scattering. The retarded Green’s function in the presence of random impurity scattering is exhibited in the Born and self-consistent Born approximations, with application to Ando’s semi-elliptic density of states for the 2D Landau-quantized electron-impurity system. Important retarded Green’s functions and their methods of derivation are discussed. These include Green’s functions for electrons in magnetic fields in both three dimensions and two dimensions, also a Hamilton equation-of-motion method for the determination of Green’s functions with application to a 2D saddle potential in a time-dependent electric field. Moreover, separable Hamiltonians and their product Green’s functions are discussed with application to a one-dimensional superlattice in axial electric and magnetic fields. Green’s function matching/joining techniques are introduced and applied to spatially varying mass (heterostructures) and non-local electrostatics (surface plasmons).

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Chapitres de livres sur le sujet "Lateral heterostructures"

Lima, A. P., C. Miskys, O. Ambacher, M. Stutzmann, R. Dimitrov, V. Tilak, M. J. Murphy et L. F. Eastman. « AlGaN/GaN lateral polarity heterostructures ». Dans Springer Proceedings in Physics, 303–4. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_139.

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Wu, Yuh-Renn, Madhusudan Singh et Jasprit Singh. « Lateral and Vertical Charge Transport in Polar Nitride Heterostructures ». Dans Polarization Effects in Semiconductors, 111–59. Boston, MA : Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-68319-5_3.

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Jeschke, Sabina, Olivier Pfeiffer, Joerg Schulze et Marc Wilke. « Crystalline Ge1−x Sn x Heterostructures in Lateral High-Speed Devices ». Dans Automation, Communication and Cybernetics in Science and Engineering 2009/2010, 597–608. Berlin, Heidelberg : Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-16208-4_52.

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Kurtz, E., M. Schmidt, B. Dal Don, S. Wachter, D. Litvinov, D. Gerthsen, H. Kalt et C. Klingshirn. « Properties of CdSe/ZnSe based quantum heterostructures with and without lateral confinement potentials ». Dans Springer Proceedings in Physics, 391–92. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_181.

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Heinecke, Harald. « Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE ». Dans Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 229–42. Dordrecht : Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_21.

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Zytkiewicz, Z. R., et D. Dobosz. « Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs ». Dans Heterostructure Epitaxy and Devices — HEAD’97, 71–74. Dordrecht : Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_9.

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Mimila-Arroyo, J., et K. Somogyi. « Optical Gain Improvement of GaAs Lateral Photoresistive Elements by Sulphur Passivation of the Surface ». Dans Heterostructure Epitaxy and Devices — HEAD’97, 251–54. Dordrecht : Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_48.

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Brinkop, F., C. Dahl, J. P. Kotthaus, G. Weimann et W. Schlapp. « Microwave Conductivity of Laterally Confined Electron Systems in AlGaAs/GaAs Heterostructures ». Dans Springer Series in Solid-State Sciences, 352–55. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84408-9_51.

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Bakhtatou, Ali, et Ali Hamidani. « Design of a New Photo-Diode Based on (α-PbO)/(α-SnO) Lateral Heterostructure ». Dans Springer Proceedings in Materials, 133–41. Singapore : Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-1916-7_14.

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Tagawa, Tomoya, et Shin-ichi Katayama. « Plasmons in laterally density modulated 2D electron gas in shallow etched single-heterostructures ». Dans Springer Proceedings in Physics, 481–82. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_225.

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Actes de conférences sur le sujet "Lateral heterostructures"

Zhong, Yutong, Hanyuan Ma, Qian Lv, Yongzhuo Li, Jiabin Feng, Chen Li, Jialu Xu, Chenxin Yu, Ruitao Lv et Cun-Zheng Ning. « Low-voltage Injection-free Electroluminescence Device based on a Monolayer MoSe2/WSe2 Lateral Heterostructure ». Dans CLEO : Science and Innovations, SF2R.5. Washington, D.C. : Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sf2r.5.

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We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe2/WSe2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.

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Malhotra, Yakshita, Yifan Shen, Yuanpeng Wu, Josey Hanish, Yifu Guo, Yixin Xiao, Kai Sun, Theodore Norris et Zetian Mi. « Carrier Transfer From C-Plane to Semipolar-Plane Regions in a Red-Emitting InGaN/GaN Heterostructure ». Dans CLEO : Applications and Technology, JTu2A.126. Washington, D.C. : Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.126.

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Temperature and power dependent time-resolved photoluminescence measurements are performed on a novel ultra-stable red-emitting InGaN/GaN heterostructure. PL dynamics at two distinct wavelengths indicate a lateral carrier transfer from c-plane to semipolar-plane InGaN in the structure.

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Taghinejad, Hossein, et Ali Adibi. « Ultra-miniaturized lateral heterostructures in 2D semiconductors ». Dans Active Photonic Platforms XIII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2021. http://dx.doi.org/10.1117/12.2593849.

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Marian, D., E. Dib, T. Cusati, A. Fortunelli, G. Iannaccone et G. Fiori. « Two-dimensional transistors based on MoS2 lateral heterostructures ». Dans 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838413.

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Voronine, Dmitri V., et Sharad Ambardar. « Nanophotonics of coupled emitters in atomically thin lateral heterostructures ». Dans Active Photonic Platforms XII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2020. http://dx.doi.org/10.1117/12.2569073.

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Jeschke, Sabina, Olivier Pfeiffer, Joerg Schulze et Marc Wilke. « Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices ». Dans 2010 Fourth International Conference on Quantum, Nano and Micro Technologies (ICQNM). IEEE, 2010. http://dx.doi.org/10.1109/icqnm.2010.17.

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Fontein, P. F., P. Hendriks, J. Wolter, A. Kucernak, R. Peat et D. E. Williams. « Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect ». Dans 1988 International Congress on Optical Science and Engineering. SPIE, 1989. http://dx.doi.org/10.1117/12.950344.

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Horst, S., S. W. Koch, G. Blume, G. Weiser, W. Ruhle, S. R. Johnson, J. B. Wang et al. « Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures ». Dans CLEO '07. 2007 Conference on Lasers and Electro-Optics. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452599.

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Olbrich, P., R. Ravash, T. Feil, S. D. Danilov, J. Allerdings, D. Weiss, E. L. Ivchenko et S. D. Ganichev. « Terahertz photocurrents in heterostructures with one-dimensional lateral periodic potential ». Dans 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008). IEEE, 2008. http://dx.doi.org/10.1109/icimw.2008.4665696.

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Kobayashi, Y., T. Saito, H. Tokuda et M. Kuzuhara. « Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures ». Dans 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2013. http://dx.doi.org/10.1109/imfedk.2013.6602242.

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Rapports d'organisations sur le sujet "Lateral heterostructures"

Tsui, D. C. Electronic Processes in Heterostructures, Strained-Layer Materials, and Laterally Patterned Structures. Fort Belvoir, VA : Defense Technical Information Center, septembre 1994. http://dx.doi.org/10.21236/ada294970.

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