Littérature scientifique sur le sujet « Isolated gate driver »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « Isolated gate driver ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Articles de revues sur le sujet "Isolated gate driver"
Gras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace et Gonzalo Picun. « Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1 janvier 2014) : 000206–13. http://dx.doi.org/10.4071/hitec-wp12.
Texte intégralMatalata, Hendi, et Rozlinda Dewi. « Desain Rangkaian Gate Driver Analog untuk Dual Mosfet Drivers ». Jurnal Ilmiah Universitas Batanghari Jambi 21, no 2 (4 juillet 2021) : 714. http://dx.doi.org/10.33087/jiubj.v21i2.1534.
Texte intégralKuo, Hsuan-Yu, et Jau-Jr Lin. « Development of Miniaturized Monolithic Isolated Gate Driver ». Advances in Science, Technology and Engineering Systems Journal 6, no 5 (septembre 2021) : 177–84. http://dx.doi.org/10.25046/aj060520.
Texte intégralGarcia, Jorge, Sarah Saeed, Emre Gurpinar et Alberto Castellazzi. « A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers ». Electronics 10, no 2 (13 janvier 2021) : 159. http://dx.doi.org/10.3390/electronics10020159.
Texte intégralDoucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem et Pierre Delatte. « HADES® : a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 janvier 2011) : 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.
Texte intégralMuhammad, Khairul Safuan, et Dylan Dah-Chuan Lu. « Magnetically Isolated Gate Driver With Leakage Inductance Immunity ». IEEE Transactions on Power Electronics 29, no 4 (avril 2014) : 1567–72. http://dx.doi.org/10.1109/tpel.2013.2279548.
Texte intégralZhao, Weichuan, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen et Mohamad Ghaffarian Niasar. « Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations ». Electronics 13, no 8 (13 avril 2024) : 1481. http://dx.doi.org/10.3390/electronics13081481.
Texte intégralMayorga, J. Valle, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach et A. Lostetter. « High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 janvier 2011) : 000152–58. http://dx.doi.org/10.4071/hiten-paper4-jmayorga.
Texte intégralMakki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot et Julien Weckbrodt. « Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs ». Energies 14, no 13 (27 juin 2021) : 3866. http://dx.doi.org/10.3390/en14133866.
Texte intégralSugano, Ryoko, Yuchong Sun et Hiroo Sekiya. « High-frequency resonant gate driver with isolated class-E amplifier ». Nonlinear Theory and Its Applications, IEICE 9, no 3 (2018) : 358–73. http://dx.doi.org/10.1587/nolta.9.358.
Texte intégralThèses sur le sujet "Isolated gate driver"
Laspeyres, Antoine. « Etude et conception d’un « Intelligent Power Module (IPM) » forte puissance en technologie SiC : développement du Gâte Driver ». Electronic Thesis or Diss., Nantes Université, 2023. http://www.theses.fr/2023NANU4036.
Texte intégralAeronautics tend to hybridize propulsion and electrify more and more functions on board. This leads to an increase in the voltage of the onboard network in order to meet these new constraints from electronic systems. To achieve these objectives, the new 3.3kV-rating SiC power semiconductor components seem to be a promising alternative to the Silicon IGBT sector. However, SiC technology’s low level of maturity compared to Si technol- ogy is the main obstacle to its implementation. The research work is part of the AM-PM RAPID project. The project objective is to design a 3.3kV@500A inverter arm power module in SiC technology by providing a technological break- through in power packaging and its monitoring. The research work focuses on the development of the gate driver and its intelligent functions to make the power module more reliable and to ensure secure switching of the semiconductor. From studies on the SiC component’s reliability, two aging indicators have been identified, the on-state resistance of the module and the gate leakage current of the semiconductor compo- nent. On-board monitoring circuits for these in- dicators have been proposed and a new semi- conductor control topology, the source driver, is proposed in order to make these circuits com- patible. Finally, a demonstrator specially de- signed for the AM-PM module is tested on a SiC module
Wanderoild-Morand, Yohan. « Enfouissement d’une alimentation isolée sous contraintes de température et d’isolation ». Thesis, Lyon, 2018. http://www.theses.fr/2018LYSE1193/document.
Texte intégralHigh temperature applications such as deep drilling, aeronautics or aerospace, lead to rework the isolated power supplies used for the control of the power elements. This work study the feasibility of an embedded converter with high static (10kV) and dynamic (<10 pF) insulation, able to work under high temperatures (> 250 ° C), in the ranges of dozens volts for the output voltage and several Watt of transmitted power. To avoid being constrained by a magnetic material Curie temperature of, we use a coreless transformer based DC/DC power supply. First of all, this thesis details the origin, the measurement and the estimation of the elements of the chosen transformer electric model. Then, to maximize the transferred power, we form a resonant structure by adding capacitors in parallel or in series with the transformer, then we develop a method to tune the whole. The comparison between the topologies leads us to choose a serial-serial compensation. Then we note that the technology chosen for capacitors, the static and dynamic insulation constraint can divide by more than two the power transmitted through a surface. Finally, we discuss how to rectify and regulate the output voltage without affecting the resonance or insulation provided, while minimizing the losses generated. A last part exhibit that with a suitable dissipation system and manufacturing process, it is possible to integrate the complete structure on silicon chips
Tan, Zheyuan. « Four-Output Isolated Power Supply for the Application of IGBT Gate Drive ». Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/32925.
Texte intégral
The design of the planar transformer is critical to limit the profile of the converter and the leakage phenomenon. A planar transformer fit for the inductor-less full-bridge converter is designed and analyzed in 3D FEA software. An N-port transformer model is proposed to implement the inductance matrix into the leakage inductance matrix for circuit analysis. Based on this N-port model several measurements to extract the parameters in this model are proposed, where only the impedance analyzer is needed. Finally, the effects of trace layout and encapsulation on breakdown voltage in PCB are summarized from experimental results.
Master of Science
Lin, Kai-Chieh, et 林楷傑. « Design of Isolated Gate Driver with Voltage Level Shifter ». Thesis, 2018. http://ndltd.ncl.edu.tw/handle/pr3bq6.
Texte intégral國立彰化師範大學
電機工程學系
106
Abstract This study introduces an isolated gate driver design using the TSMC highvoltage (HV) bulk 0.25-μm CMOS process. The isolated gate driver design with a voltage level shifter can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. This study also details the on-chip transformer and on-chip inductor used. The structure of the on-chip transformer comprises a stacked transformer (featuring increased coupling rate) and a tapped transformer (featuring superior voltage isolation). The circuit designed in this study will use the TSMC high-voltage (HV) bulk 0.25-μm CMOS process to manufacture the wafers. Comparison of actual measurement and simulation shows that this circuit is feasible. Finally, the experimental results show that circuit with a voltage level shifter can indeed reduce the power required for the input and increase the circuit efficiency. Keywords : isolated gate driver ; voltage level shifter ; on-chip transformer ; on-chip inductor ; tapped transformer ; stacked transformer
Livres sur le sujet "Isolated gate driver"
Miley, Mike. Truth and Consequences. University Press of Mississippi, 2019. http://dx.doi.org/10.14325/mississippi/9781496825384.001.0001.
Texte intégralChapitres de livres sur le sujet "Isolated gate driver"
Shreya, C., G. Praveen Kumar, Vikhyath D. Amin et K. Suryanarayana. « Design and Development of Multi-output Isolated Supply for SiC MOSFET Gate Driver Using Flyback Topology ». Dans Lecture Notes in Electrical Engineering, 403–18. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0626-0_32.
Texte intégralMadlberger, Maria. « Theoretical Foundations of Inter-Organizational Information Systems ». Dans Inter-Organizational Information Systems and Business Management, 33–49. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60960-768-5.ch003.
Texte intégralA. Rmila, Salahaldein. « Automatic Current Sharing Mechanism in Two-phase Series Capacitor Buck DC-DC Converter (2-pscB) ». Dans Power Electronics, RF, and Microwave Engineering [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.107975.
Texte intégralGarmer, D. R., et D. R. Garmer. « Potential energies for the reaction F + H2 HF + H by the random walk method ». Dans Quantum Monte Carlo, 53. Oxford University PressNew York, NY, 2007. http://dx.doi.org/10.1093/oso/9780195310108.003.0056.
Texte intégralActes de conférences sur le sujet "Isolated gate driver"
Kuo, Hsuan-Yu, et Jau-Jr Lin. « Implementation of Miniaturized Monolithic Isolated Gate Driver ». Dans 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE). IEEE, 2020. http://dx.doi.org/10.1109/ecice50847.2020.9301940.
Texte intégralNagai, Shuichi, Yasufumi Kawai, Osamu Tabata, Hideaki Fujiwara, Noboru Negoro, Masahiro Ishida et Nobuyuki Otsuka. « A Drive-by-Microwave isolated gate driver with gate current charge for IGBTs ». Dans 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 2014. http://dx.doi.org/10.1109/epe.2014.6910757.
Texte intégralBin Zhao, Haihong Qin, Xin Nie et Yangguang Yan. « Evaluation of isolated gate driver for SiC MOSFETs ». Dans 2013 IEEE 8th Conference on Industrial Electronics and Applications (ICIEA 2013). IEEE, 2013. http://dx.doi.org/10.1109/iciea.2013.6566550.
Texte intégralNagai, Shuichi, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka et Daisuke Ueda. « A one-chip isolated gate driver with Drive-by-Microwave technologies ». Dans 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2012. http://dx.doi.org/10.1109/rfit.2012.6401648.
Texte intégralJau Lin et Kai-Chieh Lin. « A monolithic isolated gate driver with on-chip transformer ». Dans 2017 IEEE 3rd International Future Energy Electronics Conference (IFEEC) and ECCE Asia. IEEE, 2017. http://dx.doi.org/10.1109/ifeec.2017.7992223.
Texte intégralLi, Xinyi, Zehua Chen, Ziyuan Chu, Taijia Zhang, Yuyin Sun, Yimeng Zhang et Yuming Zhang. « CMTI Improvement Circuit for SiC MOSFET Isolated Gate Driver ». Dans 2023 4th International Conference on Advanced Electrical and Energy Systems (AEES). IEEE, 2023. http://dx.doi.org/10.1109/aees59800.2023.10469131.
Texte intégralNoor, S. Z. Mohammad, M. F. Yusof, A. M. Omar, A. H. Faranadia et M. A. Mohd Radzi. « Hardware design of magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) ». Dans 2017 IEEE 8th Control and System Graduate Research Colloquium (ICSGRC). IEEE, 2017. http://dx.doi.org/10.1109/icsgrc.2017.8070605.
Texte intégralWiesemann, Julius, et Axel Mertens. « An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters ». Dans IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2021. http://dx.doi.org/10.1109/iecon48115.2021.9589774.
Texte intégralBaoxing Chen. « Isolated half-bridge gate driver with integrated high-side supply ». Dans 2008 IEEE Power Electronics Specialists Conference - PESC 2008. IEEE, 2008. http://dx.doi.org/10.1109/pesc.2008.4592516.
Texte intégralChen, Shaonan, Jing Xiao, Liwen Qin, Xiaoyong Yu, Wenlan Gong et Xiaorui Wu. « Design Of Isolated Gate Driver For Low Power Energy Harvesting ». Dans 2023 IEEE 6th International Electrical and Energy Conference (CIEEC). IEEE, 2023. http://dx.doi.org/10.1109/cieec58067.2023.10167242.
Texte intégral