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Littérature scientifique sur le sujet « Isolanti topologici »
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Articles de revues sur le sujet "Isolanti topologici"
Aguiar, Giancarlo De França, Bárbara De Cassia Xavier Cassins Aguiar, Humberto De AlencarPizza Silva, Volmir Eugênio Wilhelm et Helena Maria Wilhelm. « Modelagem de novos nós lógicos baseados na IEC 61850 para aplicação em sistemas de gestão de transformadores de potência ». Revista Tecnologia e Sociedade 17, no 46 (1 janvier 2021) : 229. http://dx.doi.org/10.3895/rts.v17n46.11824.
Texte intégralDube, Matthew P. « Deriving topological relations from topologically augmented direction relation matrices ». Journal of Spatial Information Science, no 23 (24 décembre 2021) : 1–23. http://dx.doi.org/10.5311/josis.2021.23.155.
Texte intégralYuvaraj, Monisha, Asim K. Dey, Vyacheslav Lyubchich, Yulia R. Gel et H. Vincent Poor. « Topological clustering of multilayer networks ». Proceedings of the National Academy of Sciences 118, no 21 (18 mai 2021) : e2019994118. http://dx.doi.org/10.1073/pnas.2019994118.
Texte intégralDutta, Bivas, Vladimir Umansky, Mitali Banerjee et Moty Heiblum. « Isolated ballistic non-abelian interface channel ». Science 377, no 6611 (9 septembre 2022) : 1198–201. http://dx.doi.org/10.1126/science.abm6571.
Texte intégralKauth, Christian, Marc Pastre, Jean-Michel Sallese et Maher Kayal. « System-Level Design Considerations for Carbon Nanotube Electromechanical Resonators ». Journal of Sensors 2013 (2013) : 1–12. http://dx.doi.org/10.1155/2013/384643.
Texte intégralCain, Jeffrey D., Amin Azizi, Matthias Conrad, Sinéad M. Griffin et Alex Zettl. « Layer-dependent topological phase in a two-dimensional quasicrystal and approximant ». Proceedings of the National Academy of Sciences 117, no 42 (5 octobre 2020) : 26135–40. http://dx.doi.org/10.1073/pnas.2015164117.
Texte intégralBERGER, ULRICH, JENS BLANCK et PETTER KRISTIAN KØBER. « Domain representations of spaces of compact subsets ». Mathematical Structures in Computer Science 20, no 2 (25 mars 2010) : 107–26. http://dx.doi.org/10.1017/s096012950999034x.
Texte intégralChaput, Dominique L., David Bass, Md Mehedi Alam, Neaz Al Hasan, Grant D. Stentiford, Ronny van Aerle, Karen Moore, John P. Bignell, Mohammad Mahfujul Haque et Charles R. Tyler. « The Segment Matters : Probable Reassortment of Tilapia Lake Virus (TiLV) Complicates Phylogenetic Analysis and Inference of Geographical Origin of New Isolate from Bangladesh ». Viruses 12, no 3 (27 février 2020) : 258. http://dx.doi.org/10.3390/v12030258.
Texte intégralColombari, Boris. « Welded extensions and ribbon restrictions of diagrammatical moves ». Journal of Knot Theory and Its Ramifications 30, no 02 (février 2021) : 2150008. http://dx.doi.org/10.1142/s0218216521500085.
Texte intégralYang, Jianting, Kongyang Zhao, Muzi Li, Zhu Xu et Zhilin Li. « Identifying Complex Junctions in a Road Network ». ISPRS International Journal of Geo-Information 10, no 1 (24 décembre 2020) : 4. http://dx.doi.org/10.3390/ijgi10010004.
Texte intégralThèses sur le sujet "Isolanti topologici"
LONGO, EMANUELE MARIA. « HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311358.
Texte intégralSpin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
Fruchart, Michel. « Topological phases of periodically driven crystals ». Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEN025/document.
Texte intégralThis thesis aims at developing and using a coherent framework to characterize topological states in spatially periodic media stemming from a time-periodic drive (« topological Floquet states » or « Floquet topological insulators »), when symmetries are present. Such states are a generalization of topological insulators, which appeared from the study of the control by light of topological insulators, and from the study of the wave-physics versions of topological insulators (in acoustics, mechanics and optics). New invariants characterizing such systems are defined, in particular when fermionic time-reversal is present. The cases of complex classes A and AIII in the Cartan-Altland-Zirnbauer classification, which are already known in particular cases, are generalized to any space dimension, and their survival in real classes is discussed. Potential physical consequences in electronic systems are explored by time-resolved numerical simulation of transport properties, which show evidence of quantized average differential conductances when a topological edge state is present
Repellin, Cécile. « Numerical study of fractional topological insulators ». Thesis, Paris, Ecole normale supérieure, 2015. http://www.theses.fr/2015ENSU0028/document.
Texte intégralTopological insulators are band insulators which are fundamentally different from atomic insulators. Only a non-local quantity called topological invariant can distinguish these two phases. The quantum Hall effect is the first example of a topological insulator, but the same phase can arise in the absence of a magnetic field, and is called a Chern insulator. In the presence of strong interactions, topological insulators may host exotic excitations called anyons. The fractional quantum Hall effect is the only experimentally realized example of such phase. In this manuscript, we study the conditions of emergence of different types of fractional topological insulators, using numerical simulations. We first look at the fractional quantum Hall effect on the torus. We introduce a new projective construction of exotic quantum Hall states that complements the existing construction. We study the low energy excitations on the torus of two of the most emblematic quantum Hall states, the Laughlin and Moore-Read states. We propose and validate model wave functions to describe them. We apply this knowledge to characterize the excitations of the Laughlin state in Chern insulators. We show the stability of other fractional quantum Hall states in Chern insulators, the composite fermion, Halperin and NASS states. We explore the physics of fractional phases with no equivalent in a quantum Hall system, using two different strategies: first by choosing a model with a higher value of the topological invariant, second by adding time-reversal symmetry, which changes the nature of the topological invariant
Le, calvez Kévin. « Signatures of a 4pi periodic Andreev bound state in topological Josephson junctions ». Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY099/document.
Texte intégralThree dimensional topological insulators (3D TI) are a new state of matter composedof an electrically insulating bulk covered by metallic surface states. Theoretically, a topo-logical Josephson junction composed of these surface states can host an Andreev Boundstate (ABS) that has twice the periodicity of the conventional 2p periodic ABSs. The4p periodic ABS is expected to be the building block of topological quantum computing.Therefore, we study the dynamic of this particular ABS by performing Shapiro measure-ment on Josephson junctions built with bismuth based 3D TI.To identify the e?ects of a 4p periodic ABS in a Shapiro measurement, we use a phe-nomenological model that simulates the voltage-current characteristics of a TJJ. We predicttwo signatures of the 4p periodic ABS and estimate their robustness against Joule heatingand thermally activated quasiparticle poisoning of the 4p periodic mode.We study the Josephson junctions dynamics by performing Shapiro measurements onjunctions built on Bi2Se3. We observe the two previously anticipated signatures, whichare the non-conventional appearance order of the Shapiro steps and the remaining of asupercurrent at the closing of the Shapiro step n = 0. They prove the presence of a 4pperiodic ABS.We also study the topological insulator BiSbTeSe2 that we have grown by using themelting growth method. By superconducting interferometric measurements, we show asuperconducting surface transport without bulk electronic conduction
Bègue, Frédéric. « Isolants topologiques et magnétisme ». Thesis, Toulouse 3, 2016. http://www.theses.fr/2016TOU30392/document.
Texte intégralThe discovery of the quantum Hall effect by von Klitzing in 1980 paved the way for what is now known as topological band theory. In this theory, we are interested not only in the energy spectra of the electrons in crystals, but also in the topological structure of the bands. A new phase of matter was discovered thanks to this theory : the topological insulators. Topological insulators are unique in the sense that they behave like trivial insulators in the bulk, but possess metallic edge states. In this thesis, we are particularly interested in so-called Z2 topological insulators, whose edge states are protected by time reversal symmetry : they cannot disappear in the presence of a perturbation that respects this symmetry, without the system undergoing a quantum phase transition. For three-dimensional topological insulators, we propose an experimental criterion based on magnetic quantum oscillations to identify a special kind of topological insulators : the strong topological insulator. In two dimensions, we study the consequences of time reversal symmetry breaking due to anti-ferromagnetic order. In this case, the important symmetry is time reversal times a trans- lation. In this context, we first establish an analytical expression for systems that also have inversion symmetry. We then adapt three numerical methods usually employed for time reversal symmetric systems : the reconnection phase method, the Wannier charge center method and the explicit construction of edge states. We show that they are useful to probe the topology of models for which no methods were available ; such as non-centrosymmetric systems
Rocha, Leandro Seixas. « Estrutura eletrônica de isolantes topológicos em duas e três dimensões ». Universidade de São Paulo, 2014. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-16102014-092038/.
Texte intégralIn this doctoral thesis we present a study of the electronic structure of topological insulators materials. The fundamental theory of topological insulators was addressed through the Z2 topological invariants, as well as their methods to calculate these topological invariants and the consequences of non-trivial band topology. Just as atomistic and energetic properties, the electronic properties of some topological insulators were calculated using first-principles methods based upon Density Functional Theory. We present in this thesis the study of four systems of physical interest: (1) In topological insulators like Bi2Se3 and Bi2Te3 with stacking faults, we found that the Bi2Te3 with stacking faults presents metallic states in the region of the defect; (2) For Bi2Se3/GaAs interface with Se-treatment in the GaAs region, we found that the interaction between the Dirac cone of the Bi2Se3 and the valence band of the GaAs opens a bandgap at the -point; (3) In germanene nanoroads embedded on germanane with zigzag interfaces/edge, we found that from a critical width we can observe the quantum spin Hall effect; and (4) For SixGe1x two-dimensional hexagonal disordered alloy, the system shares the same non-trivial band topology of the silicene and germanene, while the ordered alloy Si0.5Ge0.5 is a trivial insulator. The electronic structures of these systems were investigated in order to understand the physical consequences of non-trivial band topology in the bulk and surfaces/interfaces Bloch states.
Marcinkiewicz, Michal. « Terahertz Spectroscopy of Topological Phase Transitions in HgCdTe-based systems ». Thesis, Montpellier, 2017. http://www.theses.fr/2017MONTS068/document.
Texte intégralThis thesis presents an investigation of different topological phases in mercury-cadmium-telluride (HgCdTe or MCT) based heterostructures. These solid state systems are indeed a perfect playground to study topological states, as their band structure can be easily varied from inverted to non-inverted, by changing internal or external parameters.If a system has an inverted band ordering, its electronic structure has a non-trivial topology. One cannot change its topological order without closing the band gap, which is inevitably accompanied with the appearance of massless particles in the bulk. A system, that has an inverted band structure and a finite gap in which the Fermi level is positioned, is called a topological insulator. These novel materials are insulators in the bulk, but host gapless metallic states with linear dispersion relation at boundaries, protected against disorder and backscattering on non-magnetic impurities. These states arise at the interfaces between materials characterized by a different topological order. A 2D topological insulator is thus characterized by a set of 1D spin-polarized channels of conductance at the edges, while a 3D topological insulator supports spin-polarized 2D Dirac fermions on its surfaces.The 2D and 3D massless fermions have already been demonstrated experimentally in HgCdTe-based heterostructures. However, the topological phase transitions during which the massless particles appear remain barely explored. The HgCdTe band structure can be tuned from inverted to non-inverted using chemical composition, pressure, temperature, or quantum confinement. These parameters therefore allow to probe the system in the vicinity of different topological phase transitions. In this thesis, the use of temperature as continuous band gap tuning parameter allows to study the appearance and the parameters of semi-relativistic 2D Dirac and 3D Kane fermions emerging at the points of phase transitions.The systems investigated were Hg$_{1-x}$Cd$_x$Te bulk systems and HgTe/CdTe quantum wells characterized by an inverted and regular band order, and strained HgTe films which can be considered as 3D topological insulators with a residual quantum confinement. All these systems exhibit topological properties, and the experimental results are interpreted according to theoretical predictions based on the Kane model. This thesis is complemented by an overview and the preliminary results obtained on a different compound -- a InAs/GaSb broken-gap quantum well, which was also identified as a topological insulator. The structures were studied by means of terahertz and mid-infrared magneto-transmission spectroscopy in a specifically designed experimental system, in which temperature could be tuned in a broad range
Hijano, Cubelos Oliver. « Hétérostructures supraconductrices et isolants topologiques ». Thesis, Université Paris-Saclay (ComUE), 2015. http://www.theses.fr/2015SACLS247/document.
Texte intégralThe thesis is focused on the theoretical study of the electronic properties at the surface of the transition metal oxide STO. This material is the cornerstone of oxide electronics, an emerging research area that has the goal of investigating transition metal oxides as post-silicon candidates for a future emerging new electronics. STO is in itself an astounding system; in its purest chemical composition is a good ban-insulator with a wide bandgap. Nevertheless, upon doing it with tiny amounts of other elements it transforms itself in a metal with high electron mobility. Even more remarkably, at the lowest temperatures, typically below 300mK, it goes superconductor. And adding to these properties, strain induces also ferroelectricity in this material. Over the last years, STO has also grabbed attention because of its ability of hosting two-dimensional electron gas (2DEGs) when it is interfaced with some polar oxides. Such 2DEGs exhibit fascinating properties, the most conspicuous is the coexistence of magnetism and superconductivity.The surface of STO can host 2DEGs too, without need of interfacing it to other materials; in this case the electrons participating in transport are generated by oxygen vacancies created at the surface. This is remarkable observation, as it affords a simpler structure where the 2DEGs properties can be studied. In spite of the accumulated knowledge, still a better fundamental comprehension is required of the electronic structure of the quantum wells at the surfaces oriented along the 111 direction, for which the perovskite structure is reminiscent of the celebrated honeycomb-like structure of graphene. Contrary to the latter, in which electrons are in s- and p- states, 111 quantum wells in STO would host electrons in d-bands. Higher electronic correlations are then expected, that may bring new fascinating physics.The outline of this Thesis has two main branches: first, it studies the 111-oriented STO bilayer, formed by just two unit cells; secondly it analyzes the quantum wells generated by Oxygen vacancies at the 111-surface of STO. Both subjects are approached using tight-binding models in which the Hamiltonian incorporates different terms related to on-site energies, hopping interactions or spin-orbit coupling. From these calculations, I have carried out an exhaustive analysis of the orbital character and parity properties of valence and conduction bands, as well as edge states in the 111 bilayer. Tight-binding calculations have also shed light on the orbital character, space location and extension and energy of electronic states generated by oxygen vacancies at the 001 surface of STO
Thomas, Candice. « Strained HgTe/CdTe topological insulators, toward spintronic applications ». Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY090/document.
Texte intégralWith graphene-like transport properties governed by massless Dirac fermions and a topological protection preventing from backscattering phenomena, topological insulators, characterized by an insulating bulk and conducting surfaces, are of main interest to build low power consumption electronic building-blocks of primary importance for future electronics.Indeed, the absence of disorder, the generation of dissipation-less spin-polarized current or even the possibility to generate pure spin current without magnetic materials are some of the promises of these new materials.The objective of this PhD thesis has been to experimentally demonstrate the eligibility of HgTe three dimensional topological insulator system for applications and especially for spintronics.To do so, strong efforts have been dedicated to the improvement of the growth process by molecular beam epitaxy.Chemical composition, strain, defect density and sharpness of the HgTe interfaces have been identified as the major parameters of study and improvement to ensure HgTe inverted band structure, bulk gap opening and to emphasize the resulting topological surface state electronic properties. Verification of the topological nature of this system has then been performed using low temperature magneto-transport measurements of Hall bars designed with various HgTe thicknesses. It is worth noting that the high desorption rate of Hg has made the nanofabrication process more complex and required the development of a low temperature process adapted to this constraint. While the thicker samples have evidenced very complex transport signatures that need to be further investigated and understood, the thickness reduction has led to the suppression of any additional contributions, such as bulk or even side surfaces, and the demonstration of quantum Hall effect with vanishing resistance. Consequently, we have managed to demonstrate direct evidences of Dirac fermions by temperature dependent analysis of the quantum Hall effect. The next step has been to use the topological properties and especially the locking predicted between momentum and spin to test the HgTe potential for spintronics. Spin pumping experiments have demonstrated the power of these topological structures for spin injection and detection. Moreover, the implementation of HgTe into simple p-n junction has also been investigated to realize a first spin-based logic element
Ghelli, Greta. « Topological phases in spin ladders ». Master's thesis, Alma Mater Studiorum - Università di Bologna, 2018. http://amslaurea.unibo.it/17050/.
Texte intégralActes de conférences sur le sujet "Isolanti topologici"
Kim, H. A., M. A. Allen, D. H. Ditto et J. A. Wickert. « Development Process to Optimize and Quantify Effectiveness of Differential Crowning™ for Noise Reduction in Drivetrains ». Dans ASME 2000 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/detc2000/ptg-14422.
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