Bibliographies thématiques / Ion beam induced luminescence

Littérature scientifique sur le sujet « Ion beam induced luminescence »

Auteur : Grafiati
Publié le 10 mars 2023

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Articles de revues sur le sujet "Ion beam induced luminescence"

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Malmqvist, K. G. « Ion Beam Induced Luminescence ». Solid State Phenomena 63-64 (décembre 1998) : 147–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.63-64.147.

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Huddle, James R., Patrick G. Grant, Alexander R. Ludington et Robert L. Foster. « Ion beam-induced luminescence ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 261, no 1-2 (août 2007) : 475–76. http://dx.doi.org/10.1016/j.nimb.2007.04.025.

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Brooks, R. J., D. E. Hole et P. D. Townsend. « Ion beam induced luminescence of materials ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 190, no 1-4 (mai 2002) : 136–40. http://dx.doi.org/10.1016/s0168-583x(01)01226-5.

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Ryuto, H., F. Musumeci, A. Sakata, M. Takeuchi et G. H. Takaoka. « Spectrometer for cluster ion beam induced luminescence ». Review of Scientific Instruments 86, no 2 (février 2015) : 023106. http://dx.doi.org/10.1063/1.4907540.

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Brooks, R. J., D. E. Hole, P. D. Townsend, Z. Wu, J. Gonzalo, A. Suarez-Garcia et P. Knott. « Ion beam induced luminescence of thin films ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 190, no 1-4 (mai 2002) : 709–13. http://dx.doi.org/10.1016/s0168-583x(01)01256-3.

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Sullivan, P. A., et R. A. Baragiola. « Ion beam induced luminescence in natural diamond ». Journal of Applied Physics 76, no 8 (15 octobre 1994) : 4847–52. http://dx.doi.org/10.1063/1.357258.

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Haycock, P. W., et P. D. Townsend. « Ion beam induced luminescence spectra of LiNbO3 ». Radiation Effects 98, no 1-4 (septembre 1986) : 243–48. http://dx.doi.org/10.1080/00337578608206115.

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KATO, Daiji, Hiroyuki A. SAKAUE, Izumi MURAKAMI, Teruya TANAKA, Takeo MUROGA et Akio SAGARA. « Ion-Beam Induced Luminescence and Damage of Er2O3 ». Plasma and Fusion Research 7 (2012) : 2405043. http://dx.doi.org/10.1585/pfr.7.2405043.

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Iwaki, Masaya, Makoto Kumagai et Keiko Aono. « Ion beam induced luminescence of Tb-implanted sapphire ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 127-128 (mai 1997) : 488–91. http://dx.doi.org/10.1016/s0168-583x(96)00976-7.

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Rossi, P., D. K. Brice, C. H. Seager, F. D. McDaniel, G. Vizkelethy et B. L. Doyle. « Ion beam induced luminescence of doped yttrium compounds ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 219-220 (juin 2004) : 327–32. http://dx.doi.org/10.1016/j.nimb.2004.01.078.

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Thèses sur le sujet "Ion beam induced luminescence"

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Brooks, Robert. « Ion beam induced luminescence of materials ». Thesis, University of Sussex, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391861.

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Haycock, P. W. « Ion beam induced luminescence and polarisation reversal in ferroelectric crystals ». Thesis, University of Sussex, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373155.

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Dubner, Andrew D. (Andrew David). « Mechanism of ion beam induced deposition ». Thesis, Massachusetts Institute of Technology, 1990. http://hdl.handle.net/1721.1/13637.

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Della, Ratta Anthony D. (Anthony David). « Focused ion beam induced deposition of copper ». Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12418.

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Sukirno. « Ion beam induced interface motion and impurity relocation ». Thesis, University of Salford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293846.

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Funatsu, Jun. « Laser-assisted focused-ion-beam-induced deposition of copper ». Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/32617.

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Zhou, Hua. « Ion Beam Erosion-Induced Self-Organized Nanostructures On Sapphire ». ScholarWorks @ UVM, 2007. http://scholarworks.uvm.edu/graddis/246.

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Ion beam erosion of solid surfaces is known to produce a variety of surface morpholo- gies, such as pits, mounds or crests. Very often self-organized patterns composed of highly correlated arrays of dots or ripples at sub-micrometer and nanometer length scale could be obtained. Ion beam erosion patterning have demonstrated the poten- tial to tailor related surface properties for optoelectronic and spintronic applications, such as modulated photoemission induced by quantum con¯nement of nanodots and magnetic anisotropy induced by nanoripples. On the other hand, one considerable practical importance and e®ect of ion beam erosion is that of surface smoothing of nanometer features, during etching or ¯lm deposition coincident with energetic species. In my dissertation, systematic investigations of ripple formation and smooth- ing during low energy Ar+ ion erosion of sapphire surfaces using synchrotron grazing incidence small angle x-ray scattering and atomic force microscopy are performed. It is found in the pattern formation that the wavelength of ripples can be varied over a remarkably wide range by changing the ion incidence angle. The ion induced viscous °ow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30±. The behavior at high temper- atures suggests relaxation by surface di®usion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface di®usion or viscous °ow relaxation. Furthermore, a real-time x- ray scattering experiment is presented showing that ion smoothing of a pre-patterned surface near normal incidence is consistent with the e®ect of a collision-induced lat- eral current. Quantitative agreement is obtained using ion-collision simulations to compute the magnitude of the surface current. The results lead to predictions for the surface morphology phase diagram as a function of ion beam energy and incidence angle that substantially agree with experimental observations. The ion-induced lat- eral current smoothing model is applicable to many surfaces that become amorphous but maintain the stoichiometry of bulk materials during ion bombardment.
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Roshchupkina, Olga. « Ion beam induced structural modifications in nano-crystalline permalloy thin films ». Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-114158.

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In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can strongly influence the structural and magnetic properties, e.g. due to a rise of the local temperature in the sample during ion implantation. In previous investigations both types of implantation techniques were studied separately. The aim of the current research was to compare both implantation techniques in terms of structural changes and changes in magnetic properties using the same material system. Moreover, to separate any possible annealing effects from implantation ones, the influence of temperature on the structural and magnetic properties were additionally investigated. For the current study a model material system which is widely used for industrial applications was chosen: a 50 nm thick non-ordered nano-crystalline permalloy (Ni81Fe19) film grown on a SiO2 buffer layer based onto a (100)-oriented Si substrate. The permalloy films were implanted with a 30 keV Ga+ ion beam; and also a series of as-deposited permalloy films were annealed in an ultra-high vacuum (UHV) chamber. Several investigation techniques were applied to study the film structure and composition, and were mostly based on non-destructive X-ray investigation techniques, which are the primary focus of this work. Besides X-ray diffraction (XRD), providing the long-range order crystal structural information, extended X-ray absorption fine structure (EXAFS) measurements to probe the local structure were performed. Moreover, the film thickness, surface roughness, and interface roughness were obtained from the X-ray reflectivity (XRR) measurements. Additionally cross-sectional transmission electron microscope (XTEM) imaging was used for local structural characterizations. The Ga depth distribution of the samples implanted with a standard ion implanter was measured by the use of Auger electron spectroscopy (AES) and Rutherford backscattering (RBS), and was compared with theoretical TRIDYN calculation. The magnetic properties were characterized via polar magneto-optic Kerr effect (MOKE) measurements at room temperature. It was shown that both implantation techniques lead to a further material crystallization of the partially amorphous permalloy material (i.e. to an increase of the amount of the crystalline material), to a crystallite growth and to a material texturing towards the (111) direction. For low ion fluences a strong increase of the amount of the crystalline material was observed, while for high ion fluences this rise is much weaker. At low ion fluences XTEM images show small isolated crystallites, while for high ones the crystallites start to grow through the entire film. The EXAFS analysis shows that both Ni and Ga atom surroundings have a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter for both implantation techniques increases with increasing ion fluence according to the same linear law. The lattice parameters obtained from the EXAFS measurements for both implantation types are in a good agreement with the results obtained from the XRD measurements. Grazing incidence XRD (GIXRD) measurements of the samples implanted with a standard ion implanter show an increasing value of microstrain with increasing ion fluence (i.e. the lattice parameter variation is increasing with fluence). Both types of implantation result in an increase of the surface and the interface roughness and demonstrate a decrease of the saturation polarization with increasing ion fluence. From the obtained results it follows that FIB and standard ion implantation influence structure and magnetic properties in a similar way: both lead to a material crystallization, crystallite growth, texturing and decrease of the saturation polarization with increasing ion fluence. A further crystallization of the highly defective nano-crystalline material can be simply understood as a result of exchange processes induced by the energy transferred to the system during the ion implantation. The decrease of the saturation polarization of the implanted samples is mainly attributed to the simple presence of the Ga atoms on the lattice sites of the permalloy film itself. For the annealed samples more complex results were found. The corresponding results can be separated into two temperature regimes: into low (≤400°C) and high (>400°C) temperatures. Similar to the implanted samples, annealing results in a material crystallization with large crystallites growing through the entire film and in a material texturing towards the (111) direction. The EXAFS analysis shows a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter of the annealed samples slightly decreases at low annealing temperatures, reaches its minimum at about ~400°C and slightly rises at higher ones. From the GIXRD measurements it can be observed that the permalloy material at temperatures above >400°C reaches its strain-free state. On the other hand, the film roughness increases with increasing annealing temperature and a de-wetting of the film is observed at high annealing temperatures. Regardless of the material crystallization and texturing, the samples annealed at low temperatures demonstrate no change in saturation polarization, while at high temperatures a rise by approximately ~15% at 800°C was observed. The rise of the saturation polarization at high annealing temperatures is attributed to the de-wetting effect.
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Müller, Georg Alexander. « Ion-beam induced changes of magnetic and structural properties in thin Fe films ». [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=971021570.

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Erola, Marja. « Ion beam and annealing induced effects in solid materials detected by nuclear methods ». Hki : Societas scientiarum Fennica, 1988. http://catalog.hathitrust.org/api/volumes/oclc/58508563.html.

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Livres sur le sujet "Ion beam induced luminescence"

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Kumar, Parmod, Jitendra Pal Singh, Vinod Kumar et K. Asokan. Ion Beam Induced Defects and Their Effects in Oxide Materials. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-93862-8.

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Córdoba Castillo, Rosa. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-02081-5.

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Sukirno. Ion beam induced interface motion and impurity relocation in amorphous layers on SI. Salford : University of Salford, 1991.

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Symposium I on New Trends in Ion Beam Processing of Materials (1996 Strasbourg, France). New trends in ion beam processing of materials and beam induced nanometric phenomena : Proceedings of Symposium I on New Trends in Ion Beam Processing of Materials, and proceedings of Symposium K on Nanometric Phenomena Induced by Laser, Ion, and Cluster Beams of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996. Sous la direction de Priolo F et Symposium K on Nanometric Phenomena Induced by Laser, Ion, and Cluster Beams (1996 : Strasbourg, France). Amsterdam : Elsevier, 1997.

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Priolo, F., E. E. B. Campbell, A. Nylandsted Larsen, J. K. N. Lindner et J. M. Poate. New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena. Elsevier Science & Technology Books, 1997.

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Castillo, Rosa Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer, 2013.

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Castillo, Rosa Córdoba Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer, 2016.

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Ion Beam Induced Defects and Their Effects in Oxide Materials. Springer International Publishing AG, 2022.

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Castillo, Rosa Córdoba. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer London, Limited, 2013.

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Chapitres de livres sur le sujet "Ion beam induced luminescence"

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Bachiller Perea, Diana. « Ion Beam Induced Luminescence in MgO ». Dans Springer Theses, 151–67. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00407-1_10.

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Bachiller Perea, Diana. « General Features of the Ion Beam Induced Luminescence in Amorphous Silica ». Dans Springer Theses, 85–98. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00407-1_6.

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Rauschenbach, Bernd. « Ion Beam-Induced Damages ». Dans Low-Energy Ion Irradiation of Materials, 71–122. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_4.

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Townsend, Peter. « Box 7 : Diagnostic Ion Beam Luminescence ». Dans Ion Beams in Nanoscience and Technology, 211–17. Berlin, Heidelberg : Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-00623-4_16.

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Melngailis, J., A. D. Dubner, J. S. Ro, G. M. Shedd, H. Lezec et C. V. Thompson. « Focused Ion Beam Induced Deposition ». Dans Emerging Technologies for In Situ Processing, 153–61. Dordrecht : Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1409-4_17.

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Tanaka, Atsushi. « Ion Beam-Induced Mutation in Plants ». Dans An Advanced Course in Nuclear Engineering, 163–84. Singapore : Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7350-2_13.

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Miotello, A., D. C. Kothari et L. Guzman. « Ion Beam Induced Ni-Ag Mixing ». Dans Interaction of Charged Particles with Solids and Surfaces, 687–91. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-8026-9_44.

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Moon, Myoung-Woon, Chansoo Kim et Ashkan Vaziri. « Ion Beam-Induced Self-Assembled Wrinkles ». Dans Mechanical Self-Assembly, 47–67. New York, NY : Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4562-3_4.

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Timilsina, Rajendra, et Philip D. Rack. « Monte Carlo Simulations of Focused Ion Beam Induced Processing ». Dans Helium Ion Microscopy, 89–118. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41990-9_4.

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Anttila, A. « Ion-Beam Induced Diamond-Like Carbon Coatings ». Dans Structure-Property Relationships in Surface-Modified Ceramics, 455–75. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0983-0_29.

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Actes de conférences sur le sujet "Ion beam induced luminescence"

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Baryshnikov, V. I., V. L. Paperny et I. V. Shipaev. « Luminescence of Ti:Al2O3-media induced by pinched “overaccelerated” electron-Ti-ion beams ». Dans XVI INTERNATIONAL CONFERENCE ON LUMINESCENCE AND LASER PHYSICS DEVOTED TO THE 100TH ANNIVERSARY OF IRKUTSK STATE UNIVERSITY. Author(s), 2019. http://dx.doi.org/10.1063/1.5089843.

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Vakhtin, Andrei B., Kristen A. Peterson, Daniel J. Kane, Eric H. Jordan, Geoffrey Hansen et Matthew Teicholz. « Combination of Fourier-Domain Optical Coherence Tomography and Photo-Stimulated Luminescence Piezo-Spectroscopy as an NDE Tool for Thermal Barrier Coatings ». Dans ASME Turbo Expo 2007 : Power for Land, Sea, and Air. ASMEDC, 2007. http://dx.doi.org/10.1115/gt2007-27557.

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A combination of two optical methods — Fourier-domain optical coherence tomography (FD-OCT) and photo-stimulated luminescence piezo-spectroscopy (PLPS) is used as a non-destructive evaluation (NDE) tool for thermal barrier coatings (TBC). This research is focused on NDE of electron beam physical vapor deposition (EB-PVD) TBC’s. FD-OCT is an interferometric technique, which uses spectrally broadband visible or infrared light to obtain spectrally resolved interferograms of the light that is back-scattered from subsurface structures and defects (e.g., interfaces, cracks, voids) in optically translucent material. When the Fourier transform is applied to the interferogram, a depth-resolved image of the back-scattering sites is obtained. FD-OCT is shown to be a useful NDE tool that can profile the top coat-metal substrate interface and measure the top coat thickness. Also, it has the potential of assessing microcracking and spallation damage. PLPS provides quantitative information on stress in the thermally grown oxide (TGO) by measuring the spectral shifts in the laser-induced luminescence spectra of the Cr3+ ions present in the TGO. When combined, the PLPS and FD-OCT methods can provide a set of important input parameters for the TBC remaining life predicting model. Ultimately they will collect spatially resolved data on matching spatial domains. The two optical methods are applied to thermally cycled EB-PVD TBC samples. The experimental results are compared to destructive inspection data.
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Miller, N. C., et K. P. Rispoli. « Electron Beam Induced Luminescence ». Dans ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0435.

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Abstract A method to detect defects affecting laser diode radiation has been devised by imaging the induced luminescence resulting from a scanning electron beam. Electron Beam Induced Luminescence (EBIL) involves imaging the current from a sensor diode as the SEM electron beam scans across the laser diode surface. Defects preventing laser diode radiation will be shown as contrast variations in the EBIL image. This technique is similar to electron beam induced current (EBIC), reference 1, in which the electron beam provides the capability for measuring subsurface electrical and physical parameters that effect device electrical performance. However in the case of EBIL, laser diode radiation is utilized as the imaging parameter providing direct correlation between the semiconductor active layer and the resultant diode luminescence output. Alternative techniques such as Cathode Luminescence (CL), reference 2 and 5, in the scanning electron microscope (SEM) have been used for examination of semiconductor laser diodes for defects preventing radiation. However CL SEM analysis requires costly accessories, including at least an ellipsoidal mirror and a cooled photomultiplier tube sensitive to the particular laser diode output frequency. In addition the laser diode must be at the focal point of an ellipsoidal mirror, making CL SEM examination of a packaged laser diode difficult or impossible. This paper will describe the EBIL technique using several test diodes to demonstrate the ability of EBIL to image diode luminescence and defects affecting luminescent output. Deprocessing of the laser diode top electrode and EBIL operating parameters will be discussed.
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Dennison, J. R., Amberly Evans, Gregory Wilson, Justin Dekany, Charles W. Bowers et Robert Meloy. « Electron beam induced luminescence of SiO2 optical coatings ». Dans 2012 IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP 2012). IEEE, 2012. http://dx.doi.org/10.1109/ceidp.2012.6378824.

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Nagata, Shinji, Kentaro Toh, Bun Tsuchiya, N. Ohtsu et Tatsuo Shikama. « Ion-induced luminescence of silica glasses and optical fibers ». Dans Optical Science and Technology, SPIE's 48th Annual Meeting, sous la direction de F. Patrick Doty, H. Bradford Barber et Hans Roehrig. SPIE, 2004. http://dx.doi.org/10.1117/12.509823.

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Kinney, Edward R. « Beam-induced target depolarization ». Dans Polarized ion sources and polarized gas targets. AIP, 1993. http://dx.doi.org/10.1063/1.45137.

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Choi, Minho, Seongmoon Jun, Kie Young Woo, Hyun Gyu Song, Hwanseop Yeo, Sunghan Choi, Doyoun Park, Chung-Hyun Park et Yong-Hoon Cho. « Nanoscale luminescence selection of quantum dot using focused-ion-beam ». Dans Photonic and Phononic Properties of Engineered Nanostructures XII, sous la direction de Ali Adibi, Shawn-Yu Lin et Axel Scherer. SPIE, 2022. http://dx.doi.org/10.1117/12.2607510.

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Stewart, A. F., Samuel M. Lu, Mohammad M. Tehrani et C. Volk. « Ion beam sputtering of optical coatings ». Dans Laser-Induced Damage in Optical Materials : 1993, sous la direction de Harold E. Bennett, Lloyd L. Chase, Arthur H. Guenther, Brian E. Newnam et M. J. Soileau. SPIE, 1994. http://dx.doi.org/10.1117/12.180878.

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Melngailis, John. « Focused ion beam induced deposition : a review ». Dans Micro - DL tentative, sous la direction de Martin C. Peckerar. SPIE, 1991. http://dx.doi.org/10.1117/12.47341.

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Wanzenboeck, H. D. « Ion beam induced deposition of dielectric nanostructures ». Dans Eighth International Conference on Dielectric Materials, Measurements and Applications. IEE, 2000. http://dx.doi.org/10.1049/cp:20000557.

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Rapports d'organisations sur le sujet "Ion beam induced luminescence"

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SEXTON, FREDERICK W., DAVID S. WALSH, BARNEY L. DOYLE et PAUL E. DODD. Time resolved ion beam induced charge collection. Office of Scientific and Technical Information (OSTI), avril 2000. http://dx.doi.org/10.2172/754393.

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Tsang, T., S. Bellavia, R. Connolly, D. Gassner, Y. Makdisi, T. Russo, P. Thieberger, D. Trbojevic et A. Zelenski. A new luminescence beam profile monitor for intense proton and heavy ion beams. Office of Scientific and Technical Information (OSTI), octobre 2008. http://dx.doi.org/10.2172/945353.

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Tsang T., D. Trbojevic, S. Bellavia, R. Connolly, D. Gassner, Y. Makdisi, T. Russo, P. Thieberger et A. Zelenski. A New Luminescence Beam Profile Monitor for Intense Proton and Heavy Ion Beams. Office of Scientific and Technical Information (OSTI), octobre 2008. http://dx.doi.org/10.2172/1061920.

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Qian, Y., D. Ila, K. X. He, M. Curley, D. B. Poker et L. A. Boatner. Ion beam-induced changes in optical properties of MgO. Office of Scientific and Technical Information (OSTI), décembre 1995. http://dx.doi.org/10.2172/219356.

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Weber, W. J., et L. M. Wang. Temperature dependence of ion-beam-induced amorphization in {beta}-SiC. Office of Scientific and Technical Information (OSTI), février 1995. http://dx.doi.org/10.2172/10119438.

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N.N. Gorelenkov et S.S. Medley. Modeling of Low Frequency MHD Induced Beam Ion Transport In NSTX. Office of Scientific and Technical Information (OSTI), juillet 2004. http://dx.doi.org/10.2172/828500.

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Schoene, H., D. S. Walsh, F. W. Sexton, B. L. Doyle, J. F. Aurand, P. E. Dodd, R. S. Flores et N. Wing. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics. Office of Scientific and Technical Information (OSTI), août 1998. http://dx.doi.org/10.2172/663234.

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Vizkelethy, Gyorgy. Simulation of ion beam induced current in radiation detectors and microelectronic devices. Office of Scientific and Technical Information (OSTI), octobre 2009. http://dx.doi.org/10.2172/974877.

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