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Littérature scientifique sur le sujet « Insulator-to-metal transition »

Auteur : Grafiati

Publié le 10 mars 2023

Mis à jour le 31 juillet 2025

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Articles de revues sur le sujet "Insulator-to-metal transition"

Lee, D., B. Chung, Y. Shi, et al. "Isostructural metal-insulator transition in VO2." Science 362, no. 6418 (2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.

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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an inter

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Epstein, A. J., J. M. Ginder, F. Zuo, et al. "Insulator-to-metal transition in polyaniline." Synthetic Metals 18, no. 1-3 (1987): 303–9. http://dx.doi.org/10.1016/0379-6779(87)90896-4.

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Lavarda, F. C., M. C. dos Santos, D. S. Galvão, and B. Laks. "Insulator-to-metal transition in polythiophene." Physical Review B 49, no. 2 (1994): 979–83. http://dx.doi.org/10.1103/physrevb.49.979.

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Ginder, J. M., A. F. Richter, A. G. MacDiarmid, and A. J. Epstein. "Insulator-to-metal transition in polyaniline." Solid State Communications 63, no. 2 (1987): 97–101. http://dx.doi.org/10.1016/0038-1098(87)91173-2.

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Marçal, Nei, and Bernardo Laks. "Insulator-to-metal transition on polyselenophene." International Journal of Quantum Chemistry 95, no. 3 (2003): 230–36. http://dx.doi.org/10.1002/qua.10678.

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Liao, Zhaoliang, and Jiandi Zhang. "Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures." Applied Sciences 9, no. 1 (2019): 144. http://dx.doi.org/10.3390/app9010144.

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Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlate

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Farkašovský, Pavol. "The Behavior of the Spin-One-Half Falicov–Kimball Model Close to the Metal–Insulator Transition." International Journal of Modern Physics B 12, no. 26 (1998): 2709–16. http://dx.doi.org/10.1142/s0217979298001551.

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The spin-one-half Falicov–Kimball model for electronically driven valence and metal–insulator transitions is studied in one and two dimensions using small-cluster exact-diagonalization calculations. Performing an exhaustive study of the model close to the metal–insulator transition we have found that the spin-one-half Falicov–Kimball model can describe much of experimental data of transition-metal and rare-earth compounds. Particularly, except the discontinuous transitions it can provide the qualitative explanation for all typical behaviors of the electrical conductivity observed experimentall

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Pergament, A. L. "Metal-Insulator Transition Temperatures and Excitonic Phases in Vanadium Oxides." ISRN Condensed Matter Physics 2011 (November 17, 2011): 1–5. http://dx.doi.org/10.5402/2011/605913.

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The possibility of applying the excitonic insulator model to the description of metal-insulator transitions in vanadium oxide Magneli phases is investigated. Based on the Animalu transition metal model potential, the equation for the constant of Coulomb interaction in the theory of excitonic insulator is modified. It is shown that this theory allows the transition temperatures of all the oxides to be calculated. The conformity of the theory with the experimental data concerning the effective mass values for electrons in vanadium oxides is discussed.

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Ling, Yi. "Holographic lattices and metal–insulator transition." International Journal of Modern Physics A 30, no. 28n29 (2015): 1545013. http://dx.doi.org/10.1142/s0217751x1545013x.

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This paper is an extension of the talk given at the conference on Gravitation and Cosmology/The Fourth Galileo-Xu Guangqi Meeting. We intend to present a short review on recent progress on the construction of holographic lattices and its application to metal–insulator transition (MIT), which is a fundamentally important phenomenon in condensed matter physics. We will firstly implement the Peierls phase transition by constructing holographic charge density waves which are induced by the spontaneous breaking of translational symmetry. Then we turn to the holographic realization of metal–insulato

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CHEN, DONG-MENG, and LIANG-JIAN ZOU. "ORBITAL INSULATORS AND ORBITAL ORDER–DISORDER INDUCED METAL–INSULATOR TRANSITION IN TRANSITION-METAL OXIDES." International Journal of Modern Physics B 21, no. 05 (2007): 691–706. http://dx.doi.org/10.1142/s0217979207036618.

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The role of orbital ordering on metal–insulator transition in transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap of single-particle excitation spectra on the orbital order parameter is found. The thermal fluctuation drives the orbital order–disorder transition, diminishes the gap and leads to the metal–insulator transition. The unusual temperature dependence of the orbital polarization in the orbital insulator is also manifested in the resonant X-ray scattering intensity.

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Thèses sur le sujet "Insulator-to-metal transition"

Madaras, Scott. "Insulator To Metal Transition Dynamics Of Vanadium Dioxide Thin Films." W&M ScholarWorks, 2020. https://scholarworks.wm.edu/etd/1616444322.

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Vanadium Dioxide (VO2) is a strongly correlated material which has been studied for many decades. VO2 has been proposed for uses in technologies such as optical modulators, IR modulators, optical switches and Mott memory devices. These technologies are taking advantage of VO2’s insulator to metal transition (IMT) and the corresponding changes to the optical and material properties. The insulator to metal transition in VO2 can be accessed by thermal heating, applied electric field, or ultra-fast photo induced processes. Recently, thin films of VO2 grown on Titanium Dioxide doped with Niobium (T

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Proskuryakov, Yuri. "Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systems." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288367.

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Liu, Mengkun. "Ultrafast far-infrared studies of Vanadates - multiple routes for an insulator to metal transition." Thesis, Boston University, 2012. https://hdl.handle.net/2144/12484.

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Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you. The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V2

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Spitzig, Alyson. "The importance of Joule heating on the voltage-triggered insulator-to-metal transition in VO₂." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62808.

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The large change in resistivity in the material VO₂ has attracted considerable attention since it was first discovered in 1959. Recently, the ability to trigger the insulator-to-metal transition (IMT) with a strong electric field has been observed, but there has been debate about whether the transition is due to field-effects. We apply a voltage bias across a VO₂ thin film via a conductive atomic force microscope (CAFM) tip and measure the resultant current. We observe the IMT as a jump in the measured current in the IV curves. We fit the IV curves to the Poole-Frenkel (PF) conduction mechanis

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Weerasinghe, Hasitha C. "Electrical characterization of metal-to-insulator transition in iron silicide thin films on sillicone substrates." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001677.

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Watson, Deborah Lee. "Quantum interference effects in the magnetoresistance of semiconductor structures near the metal to insulator transition." Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286547.

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O'Neal, Jared. "A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492701913534985.

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Read, Daniel Edward. "Electrical and magnetic properties of n-Cd(_1-x)Mn(_x) Te close to the metal-insulator transition." Thesis, Durham University, 2001. http://etheses.dur.ac.uk/3783/.

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Electrical transport and magnetic measurements have been made on n-Cd(_1-x)Mn(_x) Te (0.047 < X < 0.197) for samples doped with hi or In,Al. Results are presented for measurements made as a function of temperature (40 mK < T < 300 K), applied magnetic field (0 T < B < 6 T) and photogenerated carrier density. Low field magnetic susceptibility measurements have identified a transition from a paramagnetic phase to a spin glass phase at low temperatures. The measured temperature dependence of the magnetic susceptibility is consistent with a cluster glass model. Measurements of the spin glass freez

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Humbert, Vincent. "Etude des états fondamentaux dans des systèmes supraconducteurs désordonnés de dimension 2." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS149/document.

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Un matériau 3D, initialement supraconducteur, peut avoir différents états fondamentaux dépendamment de son degré de désordre : supraconducteur, métallique ou isolant. A dimension réduite (2D), la localisation d’Anderson interdit théoriquement tout état métallique. La modification du désordre induit alors une Transition directe Supraconducteur-Isolant (TSI). La présence de fortes interactions électroniques, non prises en compte dans les théories conventionnelles, pourrait cependant remettre en cause ce paradigme et laisser émerger des états métalliques 2D, complexifiant l’image généralement adm

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Golalikhani, Maryam. "Structure and electronic properties of atomically-layered ultrathin nickelate films." Diss., Temple University Libraries, 2015. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/353844.

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Physics Ph.D. This work presents a study on stoichiometry and structure in perovskite-type oxide thin films and investigates the role of growth–induced defects on the properties of materials. It also explores the possibility to grow thin films with properties close or similar to the ideal bulk parent compound. A novel approach to the growth of thin films, atomic layer-by-layer (ALL) laser molecular beam epitaxy (MBE) using separate oxide targets is introduced to better control the assembly of each atomic layer and to improve interface perfection and stoichiometry. It also is a way to lay

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Livres sur le sujet "Insulator-to-metal transition"

Hofstetter, Etienne. Contribution to the study of the metal-insulator transition in the anderson model of localization. 1994.

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Stafström, Sven, and Mikael Unge. Disorder-induced electron localization in molecular-based materials. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.25.

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This article examines disorder-induced electron localization in molecular-based materials, using DNA and pentacene molecular crystals as examples. In DNA, the disorder is intrinsic and strong, resulting in very short localization lengths. The pentacene crystal, on the other hand, is intrinsically homogeneous and the disorder is extrinsic and weak, which makes a metal–insulator transition (MIT) possible. After providing an overview of carbon-based materials for electronic applications, the article explains the methodology for calculating the localization properties of a DNA double strand and a

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Cao, Gang, and Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La2CuO4 and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr2RuO4 shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott meta

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Chapitres de livres sur le sujet "Insulator-to-metal transition"

Ihn, Thomas. "Theoretical work related to the metal-insulator transition." In Springer Tracts in Modern Physics. Springer New York, 2004. http://dx.doi.org/10.1007/0-387-21828-9_9.

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Iwai, S., Y. Okimoto, M. Ono, et al. "Ultrafast insulator-to-metal switching by photoinduced Mott transition." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-27213-5_105.

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Wojtowicz, T., M. Sawicki, T. Dietl, W. Plesiewicz, and J. Jaroszyński. "Magnetic Field Driven Insulator-to-Metal Transition in Semimagnetic Semiconductors." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_65.

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Wan, Dongyang. "Strain-Induced Metal to Insulator Transition in Thin Film of SrNbO3." In Springer Theses. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-65912-1_7.

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Hilton, D. J., R. P. Prasankumar, S. Fourmaux, et al. "Enhanced photosusceptibility in the insulator-to-metal phase transition in vanadium dioxide." In Ultrafast Phenomena XV. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-68781-8_193.

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Moussa, F., and M. Hennion. "Approach to the Metal-Insulator Transition in Manganites: A Neutron Scattering Study." In Colossal Magnetoresistive Manganites. Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-94-015-1244-2_2.

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Jantsch, W., Z. Wilamowski, N. Sandersfeld, and F. Schäffler. "Evidence for Screening Breakdown near the Metal-to-Insulator Transition in two Dimensions." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_408.

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Rini, Matteo, Jiro Itatani, Yasuhide Tomioka, Yoshinori Tokura, Robert W. Schoenlein, and Andrea Cavalleri. "Insulator-to-Metal Transition Induced by Mid-IR Vibrational Excitation in a Magnetoresistive Manganite." In Ultrafast Phenomena XV. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-68781-8_189.

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Nakamura, Shin, Masami Sato, Shotaro Morimoto, Saburo Nasu, and Yorihiko Tsunoda. "Mössbauer study on the magnetic field-induced insulator-to-metal transition in perovskite EU0.6Sr0.4MnO3." In ICAME 2005. Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-49853-7_88.

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Takagi, H., H. Eisaki, S. Uchida, and R. J. Cava. "Charge Transport Properties of Strongly Correlated Metals near Charge Transfer Insulator to Metal Transition." In Spectroscopy of Mott Insulators and Correlated Metals. Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-57834-2_16.

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Actes de conférences sur le sujet "Insulator-to-metal transition"

Kang, Ji-Hun, Seo-Joo Lee, and Q.-Han Park. "Microscopic origin of metal-to-insulator transition in tightly-coupled metamaterials." In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE, 2015. http://dx.doi.org/10.1109/cleopr.2015.7375991.

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Wang, Xuefeng, Ming Zhao, and David D. Nolte. "Insulator-to-Metal Transition of Gold Films Observed by Interferometric Picometrology." In International Quantum Electronics Conference. OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.img6.

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Mahapatra, Smruti Rekha, Debasish Mondal, and Naga Phani B. Aetukuri. "Fabrication of EDLTs to electrochemically control metal-insulator transition in VO2." In 2022 IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2022. http://dx.doi.org/10.1109/icee56203.2022.10117890.

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Kang, B. J., M. Chaker, E. Hack, et al. "THz-induced Insulator-to-Metal Transition in Stacked VO2 Nano-slits." In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8873912.

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Qaderi, Fatemeh, Adrian Ionescu, Andrei Muller, et al. "Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide." In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8874271.

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Cavalleri, Andrea, Henry H. W. Chong, Robert W. Schoenlein, Jean Claude Kieffer, and Thomas Dekorsy. "Structural bottleneck in the photo-induced insulator-to-metal transition in VO2 ." In International Quantum Electronics Conference. OSA, 2004. http://dx.doi.org/10.1364/iqec.2004.itub6.

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Kaneko, M., M. Saito, T. Ito, et al. "Angle-Resolved Photoemission Study on Insulator-to-Metal Transition of Sm1−xYxS." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.011080.

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Hilton, D. J., R. P. Prasankumar, S. Fourmaux, et al. "Enhanced photosusceptibility in the insulator-to-metal phase transition in vanadium dioxide." In International Conference on Ultrafast Phenomena. OSA, 2006. http://dx.doi.org/10.1364/up.2006.mg6.

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Lin, J., Annadi, S. Sonde, et al. "Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices." In 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838541.

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Sahu, S. R., S. S. Majid, K. Gautam, R. J. Choudhary, V. G. Sathe, and D. K. Shukla. "Insulator to metal transition in VO2 M1+B phase on silicon substrate." In PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5130313.

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Rapports d'organisations sur le sujet "Insulator-to-metal transition"

Hood, R. Q., and G. Galli. Insulator to Metal Transition in Fluid Hydrogen. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/15003860.

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Averitt, Richard D. Conductivity Dynamics of the Metal to Insulator Transition in EuNiO3/LANiO3 Superlattices. Defense Technical Information Center, 2016. http://dx.doi.org/10.21236/ad1008800.

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Pease, Douglas M. Study of Phase Separation as Related to the Metal-Insulator for Transition in Chromium Doped V{sub 2}O{sub 3}. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1083455.

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