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Littérature scientifique sur le sujet « Insulator-to-metal transition »

Auteur : Grafiati

Publié le 10 mars 2023

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Articles de revues sur le sujet "Insulator-to-metal transition"

Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song et al. « Isostructural metal-insulator transition in VO2 ». Science 362, n^o 6418 (29 novembre 2018) : 1037–40. http://dx.doi.org/10.1126/science.aam9189.

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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

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Epstein, A. J., J. M. Ginder, F. Zuo, R. W. Bigelow, H. S. Woo, D. B. Tanner, A. F. Richter, W. S. Huang et A. G. MacDiarmid. « Insulator-to-metal transition in polyaniline ». Synthetic Metals 18, n^o 1-3 (février 1987) : 303–9. http://dx.doi.org/10.1016/0379-6779(87)90896-4.

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Lavarda, F. C., M. C. dos Santos, D. S. Galvão et B. Laks. « Insulator-to-metal transition in polythiophene ». Physical Review B 49, n^o 2 (1 janvier 1994) : 979–83. http://dx.doi.org/10.1103/physrevb.49.979.

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Ginder, J. M., A. F. Richter, A. G. MacDiarmid et A. J. Epstein. « Insulator-to-metal transition in polyaniline ». Solid State Communications 63, n^o 2 (juillet 1987) : 97–101. http://dx.doi.org/10.1016/0038-1098(87)91173-2.

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Marçal, Nei, et Bernardo Laks. « Insulator-to-metal transition on polyselenophene ». International Journal of Quantum Chemistry 95, n^o 3 (2003) : 230–36. http://dx.doi.org/10.1002/qua.10678.

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Liao, Zhaoliang, et Jiandi Zhang. « Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures ». Applied Sciences 9, n^o 1 (3 janvier 2019) : 144. http://dx.doi.org/10.3390/app9010144.

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Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.

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Ling, Yi. « Holographic lattices and metal–insulator transition ». International Journal of Modern Physics A 30, n^o 28n29 (20 octobre 2015) : 1545013. http://dx.doi.org/10.1142/s0217751x1545013x.

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This paper is an extension of the talk given at the conference on Gravitation and Cosmology/The Fourth Galileo-Xu Guangqi Meeting. We intend to present a short review on recent progress on the construction of holographic lattices and its application to metal–insulator transition (MIT), which is a fundamentally important phenomenon in condensed matter physics. We will firstly implement the Peierls phase transition by constructing holographic charge density waves which are induced by the spontaneous breaking of translational symmetry. Then we turn to the holographic realization of metal–insulator transition as a quantum critical phenomenon with many strongly correlated electrons involved. The holographic entanglement entropy as a diagnostic for such quantum phase transitions will be briefly mentioned.

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Farkašovský, Pavol. « The Behavior of the Spin-One-Half Falicov–Kimball Model Close to the Metal–Insulator Transition ». International Journal of Modern Physics B 12, n^o 26 (20 octobre 1998) : 2709–16. http://dx.doi.org/10.1142/s0217979298001551.

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The spin-one-half Falicov–Kimball model for electronically driven valence and metal–insulator transitions is studied in one and two dimensions using small-cluster exact-diagonalization calculations. Performing an exhaustive study of the model close to the metal–insulator transition we have found that the spin-one-half Falicov–Kimball model can describe much of experimental data of transition-metal and rare-earth compounds. Particularly, except the discontinuous transitions it can provide the qualitative explanation for all typical behaviors of the electrical conductivity observed experimentally in these materials.

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Pergament, A. L. « Metal-Insulator Transition Temperatures and Excitonic Phases in Vanadium Oxides ». ISRN Condensed Matter Physics 2011 (17 novembre 2011) : 1–5. http://dx.doi.org/10.5402/2011/605913.

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The possibility of applying the excitonic insulator model to the description of metal-insulator transitions in vanadium oxide Magneli phases is investigated. Based on the Animalu transition metal model potential, the equation for the constant of Coulomb interaction in the theory of excitonic insulator is modified. It is shown that this theory allows the transition temperatures of all the oxides to be calculated. The conformity of the theory with the experimental data concerning the effective mass values for electrons in vanadium oxides is discussed.

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Ezawa, Motohiko. « Metal-Insulator Transition from Graphene to Graphane ». Nanomaterials and Nanotechnology 3 (janvier 2013) : 10. http://dx.doi.org/10.5772/56826.

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Thèses sur le sujet "Insulator-to-metal transition"

Madaras, Scott. « Insulator To Metal Transition Dynamics Of Vanadium Dioxide Thin Films ». W&M ScholarWorks, 2020. https://scholarworks.wm.edu/etd/1616444322.

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Vanadium Dioxide (VO2) is a strongly correlated material which has been studied for many decades. VO2 has been proposed for uses in technologies such as optical modulators, IR modulators, optical switches and Mott memory devices. These technologies are taking advantage of VO2’s insulator to metal transition (IMT) and the corresponding changes to the optical and material properties. The insulator to metal transition in VO2 can be accessed by thermal heating, applied electric field, or ultra-fast photo induced processes. Recently, thin films of VO2 grown on Titanium Dioxide doped with Niobium (TiO2:Nb), have shown promise as a possible UV photo detector with high quantum efficiency which utilizes a heterostructure between these two materials. In this work, the dynamics of the IMT on thin films of VO2 is explored. We show that surface plasmons generated in an Au thin film can induce the insulator to metal transition in a thin film of VO2 due to the enhanced electric field as well as help detect the IMT via changes in its resonance condition. Time resolved pump probe studies were also done on thin films of VO2 grown on TiO2 and TiO2:Nb, using UV photon energy of 3.1 eV (400nm wavelength). The fluence threshold of the IMT at 3.1 eV was significantly lower than published values for the 1.55 eV pump fluence. The time response of the IMT shows uncommon reflectivity dynamics in these samples. The response was partially attributed to internal interference of the reflected probe beam from the inhomogeneous layers formed inside the film by different phases of VO2, and can be elucidated by a diffusion model with respect to its optical properties. Finally, the photocurrent generation time constants for the sample with highest quantum efficiency are given and compared to its ultrafast photo induced IMT time constants.

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Proskuryakov, Yuri. « Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systems ». Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288367.

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Liu, Mengkun. « Ultrafast far-infrared studies of Vanadates - multiple routes for an insulator to metal transition ». Thesis, Boston University, 2012. https://hdl.handle.net/2144/12484.

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Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.
The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V203) and Vanadium dioxide (V02). Although subtleties abound, both of the materials have first order insulator to metal phase transitions that are considered to be related to strong electron-electron (e-e) correlation. Further, ultrafast spectroscopy of strongly correlated materials has generated great interest in the field given the potential to dynamically distinguish the difference between electronic (spin) response versus lattice responses due to the associated characteristic energy and time scales. In this thesis, I mainly focus on utilizing ultrafast optical and THz spectroscopy to study phase transition dynamics in high quality V203 and V02 thin films epitaxially grown on different substrates. The main findings of the thesis are: (1) Despite the fact that the insulator to metal transition (IMT) in V203 is electron-correlation driven, lattice distortion plays an important role. Coherent oscillations in the far-infrared conductivity are observed resulting from coherent acoustic phonon modulation of the bandwidth W. The same order of lattice distortion induces less of an effect on the electron transport in V02 in comparison to V203. This is directly related to the difference in latent heat of the phase transitions in V02 and V203. (2) It is possible for the IMT to occur with very little structural change in epitaxial strained V02 films, like in the case of Cr doped or strained V203. However, in V02, this necessitates a large strain which is only possible by clamping to a substrate with larger c axis parameter through epitaxial growth. This is demonstrated for V02 films on Ti02 substrates. (3) Initiating an ultrafast photo-induced insulator-to-metal transition (IMT) is not only possible with above bandgap excitation, but also possible with high-field far-infrared excitation. With the help of the field enhancement in metamaterial split ring resonator gaps, we obtain picosecond THz electric field transients of several MVIem which is sufficient to drive the insulator to metal transition in V02.

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Spitzig, Alyson. « The importance of Joule heating on the voltage-triggered insulator-to-metal transition in VO₂ ». Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62808.

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The large change in resistivity in the material VO₂ has attracted considerable attention since it was first discovered in 1959. Recently, the ability to trigger the insulator-to-metal transition (IMT) with a strong electric field has been observed, but there has been debate about whether the transition is due to field-effects. We apply a voltage bias across a VO₂ thin film via a conductive atomic force microscope (CAFM) tip and measure the resultant current. We observe the IMT as a jump in the measured current in the IV curves. We fit the IV curves to the Poole-Frenkel (PF) conduction mechanism in the insulating state, immediately preceding the IMT. The PF conduction mechanism describes the thermal excitation of electrons into the conduction band in insulators, facilitated by strong electric fields. The PF mechanism is temperature dependent, and we use the temperature dependence to calculate the local temperature of the film before the transition. We directly compare the local electric field and local temperature of the film immediately preceding the IMT. We determine that the transition is not solely due to the applied electric field, but rather that the tip has locally warmed the film close to its IMT temperature through Joule heating.
Science, Faculty of
Physics and Astronomy, Department of
Graduate

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Weerasinghe, Hasitha C. « Electrical characterization of metal-to-insulator transition in iron silicide thin films on sillicone substrates ». [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001677.

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Watson, Deborah Lee. « Quantum interference effects in the magnetoresistance of semiconductor structures near the metal to insulator transition ». Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286547.

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O'Neal, Jared. « A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition ». The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492701913534985.

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Read, Daniel Edward. « Electrical and magnetic properties of n-Cd(_1-x)Mn(_x) Te close to the metal-insulator transition ». Thesis, Durham University, 2001. http://etheses.dur.ac.uk/3783/.

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Electrical transport and magnetic measurements have been made on n-Cd(_1-x)Mn(_x) Te (0.047 < X < 0.197) for samples doped with hi or In,Al. Results are presented for measurements made as a function of temperature (40 mK < T < 300 K), applied magnetic field (0 T < B < 6 T) and photogenerated carrier density. Low field magnetic susceptibility measurements have identified a transition from a paramagnetic phase to a spin glass phase at low temperatures. The measured temperature dependence of the magnetic susceptibility is consistent with a cluster glass model. Measurements of the spin glass freezing temperature have been carried out on four samples having different Mn fractions The results obtained are in agreement with the limited number of previous measurements on nominally undoped samples. At low temperatures photo-induced changes in magnetism have been measured in both the paramagnetic and the spin glass phase. The change in magnetisation on illumination is due to an increased number of bound magnetic polarons formed around quasi localised s-spins. High temperature susceptibility measurements have been used to examine the parameters characterising the paramagnetic phase, and their variation with Mn fraction. Electrical transport measurements at very low temperatures (T < 800 mK) have shown a strong temperature dependent electron localisation. This has resulted in the confirmation of insulating behaviour in a sample (x = 0.047) having n. At low temperatures and in zero field an activated form of the conductivity is observed. In applied magnetic fields (B > 50 mT) Efros-Shklovskii variable range hopping is observed in the insulating phase. These results are attributed to the formation of a hard gap in the density of states, having a magnetic origin. At higher fields an insulator-metal phase transition occurs. In the metallic phase the conductivity can be described by a quantum correction to the zero temperature conductivity due to the effect of electron-electron interactions. Results obtained before and after illumination are consistent with scaling theory of electron localisation, having a critical exponent close to unity, indicative of the importance of electron-electron interactions. A reduction in the value of the critical field is seen after increasing the carrier density (B(_c) = 2.0 and 1.3 T for n = 3.3 xl0(^17)cm(^-3) and 3.8 x10(^17) cm(^-3) respectively).At low temperatures an anisotropy in the resistivity has been measured for samples in the spin glass phase. Magnetoresistance measurements have shown results consistent with previous measurements, in addition to a large, low field component that is attributed to the effect of magnetic field on electrons in the variable range hopping regime.

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Humbert, Vincent. « Etude des états fondamentaux dans des systèmes supraconducteurs désordonnés de dimension 2 ». Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS149/document.

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Un matériau 3D, initialement supraconducteur, peut avoir différents états fondamentaux dépendamment de son degré de désordre : supraconducteur, métallique ou isolant. A dimension réduite (2D), la localisation d’Anderson interdit théoriquement tout état métallique. La modification du désordre induit alors une Transition directe Supraconducteur-Isolant (TSI). La présence de fortes interactions électroniques, non prises en compte dans les théories conventionnelles, pourrait cependant remettre en cause ce paradigme et laisser émerger des états métalliques 2D, complexifiant l’image généralement admise de la TSI. Ainsi, des travaux récents ont révélé la présence de deux phases métalliques distinctes dans les films minces de a-NbxSi1-x, s’intercalant entre les états supraconducteur et isolant.Durant cette thèse, nous avons étudié les propriétés de transport électronique à basse fréquence et à très basse température (T<1K) de films minces de NbxSi1-x amorphes afin de caractériser l’évolution de l’état fondamental en fonction du désordre. Celui-ci a été modifié dans nos films en jouant sur la température de recuit, l’épaisseur et la composition. Nous nous sommes alors attardés sur la destruction de ces états métalliques vers un état isolant. L’analyse des lois de conduction dans le régime isolant nous a permis de quantifier l’évolution de ses propriétés – notamment des énergies caractéristiques – en fonction du désordre. Nous avons alors pu conclure que la phase isolante pouvait être essentiellement décrite par un modèle fermionique. A moindre désordre, dans la phase métallique 2D adjacente à l’isolant, nous avons mis en évidence des signes précurseurs de l’état isolant qui évoluent continument jusqu’à et à travers la Transition Métal 2D-Isolant. Nous proposons une interprétation de l’ensemble de nos résultats impliquant deux canaux parallèles dont l’importance relative est déterminée par le désordre : l’un est fermionique, l’autre gouverné par des fluctuations supraconductrices qui persistent même lorsque la cohérence macroscopique a disparu. L’état métallique est alors dominé par ces dernières, alors que, dans l’isolant, la localisation des excitations fermioniques l’emporte.Une seconde partie de la thèse s’est concentrée sur le développement expérimental d’un dispositif de calibration large bande dédié à l’étude de films minces en réflectométrie haute fréquence (GHz) à basses températures (T<4K). Ce dispositif a pour but, lors d’une unique mise à froid, de mesurer successivement la réflexion de références connues ainsi que de l’échantillon. La calibration obtenue permet ainsi de s’affranchir de l’environnement micro-onde et d’obtenir la valeur absolue de l’impédance complexe de ces films. Les résultats obtenus sur des films minces supraconducteurs de Vanadium, comparés aux théories de la supraconductivité, permettent une première validation du dispositif et de son principe de fonctionnement en vue d’une utilisation sur des systèmes plus complexes, tels que les films minces proches de la TSI
An initially superconducting 3D material can have different ground states, depending on its disorder : superconducting, metallic or insulating. At lower dimensionality, Anderson localization theoretically forbids any metallic state. A change in disorder then induces a direct Superconductor-to-Insulator Transition (SIT). The presence of strong Coulomb interactions, which are not taken into account in conventional theories, may disrupt this paradigm and enable the emergence of 2D metallic phases, thus complicating the generally admitted picture for the SIT. Indeed, recent work has revealed the existence of two distinct metallic phases in a-NbxSi1-x thin films, in between the superconducting and insulating states.During this work, we have studied the low frequency transport properties of amorphous NbxSi1-x films at low temperatures (T<1K), in order to characterize the evolution of their ground state with disorder. In our films, disorder has been tuned by varying the heat treatment temperature, the thickness or the composition. We have then focused on the destruction of these metallic states, giving rise to an insulating state. Through the analysis of conduction laws in the insulating regime, we have quantified the evolution of its properties – in particular its characteristic energies – as disorder is varied. We could then conclude that the insulating phase can essentially be accounted for by a fermionic model. At lower disorder level, in the 2D metallic phase neighboring the insulator, we have evidenced precursor signs of the insulating state which continuously evolve until and through the 2D Metal-to-Insulator Transition. We offer an interpretation of all our results implying the existence of two parallel channels which relative importance is determined by the sample disorder level : one is fermionic, the other governed by superconducting fluctuations which persist even when the macroscopic phase coherence is lost. The metallic state is then dominated by the latter, whereas, in the insulator, fermionic excitations prevail.In a second part, we report on the experimental development of a calibration device for the broadband reflectometry measurement of thin films at microwave frequencies (GHz) and low temperatures (T<4K). This apparatus aims at measuring, during a single cool down, the reflection of known references as well as of the sample. The obtained calibration enables to obtain the absolute value of the films complex impedance, independently of the microwave environment. The results obtained on superconducting Vanadium films, compared with theories of superconductivity, enabled a first validation of the setup and of its working principle. This calibration device is therefore operational to measure more complex systems, such as thin films in the vicinity of the SIT

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Golalikhani, Maryam. « Structure and electronic properties of atomically-layered ultrathin nickelate films ». Diss., Temple University Libraries, 2015. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/353844.

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Physics
Ph.D.
This work presents a study on stoichiometry and structure in perovskite-type oxide thin films and investigates the role of growth–induced defects on the properties of materials. It also explores the possibility to grow thin films with properties close or similar to the ideal bulk parent compound. A novel approach to the growth of thin films, atomic layer-by-layer (ALL) laser molecular beam epitaxy (MBE) using separate oxide targets is introduced to better control the assembly of each atomic layer and to improve interface perfection and stoichiometry. It also is a way to layer materials to achieve a new structure that does not exist in nature. This thesis is divided into three sections. In the first part, we use pulsed laser deposition (PLD) to grow LaAlO3 (LAO) thin films on SrTiO3 (STO) and LAO substrates in a broad range of laser energy density and oxygen pressure. Using x-ray diffraction (θ-2θ scan and reciprocal space mapping), transmission electron microscopy (TEM) and x-ray fluorescence (XRF) we studied stoichiometry and structure of LAO films as a function of growth parameters. We show deviation from bulk–like structure and composition when films are grown at oxygen pressures lower than 10-2 Torr. We conclude that the discussion of LAO/STO interfacial properties should include the effects of growth–induced defects in the LAO films when the deposition is conducted at low oxygen pressures, as is typically reported in the literature. In the second part, we describe a new approach to atomically layer the growth of perovskite oxides: (ALL) laser MBE, using separate oxide targets to grow materials as perfectly as possible starting from the first atomic layer. We use All laser MBE to grow Ruddlesden–Popper (RP) phase Lan+1NinO3n+1 with n = 1, 2, 3 and 4 and we show that this technique enables us to construct new layered materials (n=4). In the last and main section of this thesis, we use All laser MBE from separate oxide targets to build the LaNiO3 (LNO) films as near perfectly as possible by depositing one atomic layer at a time. We study the thickness dependent metal-insulator transition (MIT) in ultrathin LNO films on an LAO substrate. In LNO, the MIT occurs in thin films and superlattices that are only a few unit cells in thickness, the understanding of which remains elusive despite tremendous effort devoted to the subject. Quantum confinement and structure distortion have been evoked as the mechanism of the MIT; however, first-principle calculations show that LaNiO3 remains metallic even at one unit cell thickness. Here, we show that thicknesses of a few unit cells, growth–induced disorders such as cation stoichiometry, oxygen vacancies, and substrate-film interface quality will impact the film properties significantly. We find that a film as thin as 2 unit cells, with LaO termination, is metallic above 150 K. An oxygen K-edge feature in the x-ray absorption spectra is clearly inked to the transition to the insulating phase as well as oxygen vacancies. We conclude that dimensionality and strain are not sufficient to induce the MIT without the contribution of oxygen vacancies in LNO ultrathin films. Dimensionality, strain, crystallinity, cation stoichiometry, and oxygen vacancies are all indispensable ingredients in a true control of the electronic properties of nanoscale strongly–correlated materials.
Temple University--Theses

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Livres sur le sujet "Insulator-to-metal transition"

Stafström, Sven, et Mikael Unge. Disorder-induced electron localization in molecular-based materials. Sous la direction de A. V. Narlikar et Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.25.

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This article examines disorder-induced electron localization in molecular-based materials, using DNA and pentacene molecular crystals as examples. In DNA, the disorder is intrinsic and strong, resulting in very short localization lengths. The pentacene crystal, on the other hand, is intrinsically homogeneous and the disorder is extrinsic and weak, which makes a metal–insulator transition (MIT) possible. After providing an overview of carbon-based materials for electronic applications, the article explains the methodology for calculating the localization properties of a DNA double strand and a pentacene molecular crystal, namely Hamiltonian, transfer matrix, and finite-size scaling. It also discusses the results, which show a substantial increase in the localization length of the electronic state with correlated disorder as compared to the case of uncorrelated disorder.

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Cao, Gang, et Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La₂CuO₄ and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr₂RuO₄ shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott metal-insulator transition was at play in Sr₂IrO₄ provided the impetus for a burgeoning group of studies of the influence of strong spin-orbit interactions in “heavy” (4d- and 5d-) transition-element oxides. This book reviews recent experimental and theoretical evidence that the physical and structural properties of 4d- and 5d-oxides are decisively influenced by strong spin-orbit interactions that compete or collaborate with comparable Coulomb, magnetic exchange, and crystalline electric field interactions. The combined effect leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel couplings between the orbital/lattice and spin degrees of freedom, which lead to unusual types of magnetic order and other exotic phenomena, challenge current theoretical models. Of particular interest are recent investigations of iridates and ruthenates focusing on strong spin-orbit interactions that couple the lattice and spin degrees of freedom.

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Chapitres de livres sur le sujet "Insulator-to-metal transition"

Ihn, Thomas. « Theoretical work related to the metal-insulator transition ». Dans Springer Tracts in Modern Physics, 43–44. New York, NY : Springer New York, 2004. http://dx.doi.org/10.1007/0-387-21828-9_9.

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Iwai, S., Y. Okimoto, M. Ono, H. Matsuzaki, A. Maeda, H. Kishida, H. Okamoto et Y. Tokura. « Ultrafast insulator-to-metal switching by photoinduced Mott transition ». Dans Springer Series in Chemical Physics, 340–42. Berlin, Heidelberg : Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-27213-5_105.

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Wojtowicz, T., M. Sawicki, T. Dietl, W. Plesiewicz et J. Jaroszyński. « Magnetic Field Driven Insulator-to-Metal Transition in Semimagnetic Semiconductors ». Dans Springer Series in Solid-State Sciences, 442–45. Berlin, Heidelberg : Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_65.

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Wan, Dongyang. « Strain-Induced Metal to Insulator Transition in Thin Film of SrNbO3 ». Dans Springer Theses, 103–11. Cham : Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-65912-1_7.

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Hilton, D. J., R. P. Prasankumar, S. Fourmaux, A. Cavalleri, D. Brassard, M. A. El Khakani, J. C. Keiffer, A. J. Taylor et R. D. Averitt. « Enhanced photosusceptibility in the insulator-to-metal phase transition in vanadium dioxide ». Dans Ultrafast Phenomena XV, 600–602. Berlin, Heidelberg : Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-68781-8_193.

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Moussa, F., et M. Hennion. « Approach to the Metal-Insulator Transition in Manganites : A Neutron Scattering Study ». Dans Colossal Magnetoresistive Manganites, 43–92. Dordrecht : Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-94-015-1244-2_2.

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Jantsch, W., Z. Wilamowski, N. Sandersfeld et F. Schäffler. « Evidence for Screening Breakdown near the Metal-to-Insulator Transition in two Dimensions ». Dans Springer Proceedings in Physics, 859–60. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_408.

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Rini, Matteo, Jiro Itatani, Yasuhide Tomioka, Yoshinori Tokura, Robert W. Schoenlein et Andrea Cavalleri. « Insulator-to-Metal Transition Induced by Mid-IR Vibrational Excitation in a Magnetoresistive Manganite ». Dans Ultrafast Phenomena XV, 588–90. Berlin, Heidelberg : Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-68781-8_189.

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Nakamura, Shin, Masami Sato, Shotaro Morimoto, Saburo Nasu et Yorihiko Tsunoda. « Mössbauer study on the magnetic field-induced insulator-to-metal transition in perovskite EU0.6Sr0.4MnO3 ». Dans ICAME 2005, 1235–40. Berlin, Heidelberg : Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-49853-7_88.

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Takagi, H., H. Eisaki, S. Uchida et R. J. Cava. « Charge Transport Properties of Strongly Correlated Metals near Charge Transfer Insulator to Metal Transition ». Dans Spectroscopy of Mott Insulators and Correlated Metals, 185–93. Berlin, Heidelberg : Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-57834-2_16.

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Actes de conférences sur le sujet "Insulator-to-metal transition"

Kang, Ji-Hun, Seo-Joo Lee et Q.-Han Park. « Microscopic origin of metal-to-insulator transition in tightly-coupled metamaterials ». Dans 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE, 2015. http://dx.doi.org/10.1109/cleopr.2015.7375991.

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Wang, Xuefeng, Ming Zhao et David D. Nolte. « Insulator-to-Metal Transition of Gold Films Observed by Interferometric Picometrology ». Dans International Quantum Electronics Conference. Washington, D.C. : OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.img6.

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Kang, B. J., M. Chaker, E. Hack, M. Maaza, T. Feurer, G. Gaumann, N. Numan et al. « THz-induced Insulator-to-Metal Transition in Stacked VO2 Nano-slits ». Dans 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8873912.

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Qaderi, Fatemeh, Adrian Ionescu, Andrei Muller, Anna Krammer, Miroslav Veljovic, Zoltan Ollmann, Mozhgan Hayati, Anja Skrivervik, Andreas Schueler et Thomas Feurer. « Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide ». Dans 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8874271.

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Cavalleri, Andrea, Henry H. W. Chong, Robert W. Schoenlein, Jean Claude Kieffer et Thomas Dekorsy. « Structural bottleneck in the photo-induced insulator-to-metal transition in VO2 . » Dans International Quantum Electronics Conference. Washington, D.C. : OSA, 2004. http://dx.doi.org/10.1364/iqec.2004.itub6.

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Kaneko, M., M. Saito, T. Ito, K. Imura, T. Hajiri, M. Matsunami, S. Kimura, H. S. Suzuki et N. K. Sato. « Angle-Resolved Photoemission Study on Insulator-to-Metal Transition of Sm1−xYxS ». Dans Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.011080.

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Hilton, D. J., R. P. Prasankumar, S. Fourmaux, A. Cavalleri, D. Brassard, M. A. El Khakani, J. C. Keiffer, A. J. Taylor et R. D. Averitt. « Enhanced photosusceptibility in the insulator-to-metal phase transition in vanadium dioxide ». Dans International Conference on Ultrafast Phenomena. Washington, D.C. : OSA, 2006. http://dx.doi.org/10.1364/up.2006.mg6.

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Lin, J., Annadi, S. Sonde, C. Chen, L. Stan, K. V. L. V. Achari, S. Ramanathan et S. Guha. « Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices ». Dans 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838541.

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Sahu, S. R., S. S. Majid, K. Gautam, R. J. Choudhary, V. G. Sathe et D. K. Shukla. « Insulator to metal transition in VO2 M1+B phase on silicon substrate ». Dans PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS : ICAM 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5130313.

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Belitz, D., et T. R. Kirkpatrick. « The disordered electron problem : From the metal-insulator transition to disordered superconductors ». Dans Ordering disorder : Prospect and retrospect in condensed matter physics. AIP, 1992. http://dx.doi.org/10.1063/1.44692.

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Rapports d'organisations sur le sujet "Insulator-to-metal transition"

Hood, R. Q., et G. Galli. Insulator to Metal Transition in Fluid Hydrogen. Office of Scientific and Technical Information (OSTI), juin 2003. http://dx.doi.org/10.2172/15003860.

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Averitt, Richard D. Conductivity Dynamics of the Metal to Insulator Transition in EuNiO3/LANiO3 Superlattices. Fort Belvoir, VA : Defense Technical Information Center, janvier 2016. http://dx.doi.org/10.21236/ad1008800.

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Pease, Douglas M. Study of Phase Separation as Related to the Metal-Insulator for Transition in Chromium Doped V{sub 2}O{sub 3}. Office of Scientific and Technical Information (OSTI), juin 2013. http://dx.doi.org/10.2172/1083455.

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