Articles de revues : « In-Plane nanowires »

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Belim, Sergey V., et Igor V. Bychkov. « Magnetic Properties of 2D Nanowire Arrays : Computer Simulations ». Materials 16, n^o 9 (27 avril 2023) : 3425. http://dx.doi.org/10.3390/ma16093425.

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The paper considers a nanowires 2D array located in the nodes of a square lattice. Computer simulations use the Heisenberg model and Metropolis algorithm. The array consists of small nanowires that are monodomain. The exchange interaction orders the spins within a single nanowire. Dipole–dipole forces act between neighboring nanowires. The shape of an individual nanowire affects its magnetic anisotropy. Computer simulations examine the phase transition temperature and magnetization behavior of the system. The type of magnetic moments ordering in the array of nanowires depends on the orientation of their long axis. We consider two types of systems. The nanowires’ long axes are oriented perpendicular to the plane of their location in the first case. A dipole–dipole interaction results in first-type superantiferromagnetic ordering of the nanowires’ magnetic moments for such orientation. The nanowires’ long axes are oriented in the plane of the system in the second case. Dipole–dipole interaction results in second-type superantiferromagnetic ordering in such systems. The dependence of the phase transition temperature on the dipole–dipole interaction intensity is investigated.

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Castillo-Sepúlveda, Sebastián, Rosa M. Corona, Eduardo Saavedra, David Laroze, Alvaro P. Espejo, Vagson L. Carvalho-Santos et Dora Altbir. « Nucleation and Stability of Toron Chains in Non-Centrosymmetric Magnetic Nanowires ». Nanomaterials 13, n^o 12 (7 juin 2023) : 1816. http://dx.doi.org/10.3390/nano13121816.

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This work analyzes the magnetic configurations of cylindrical nanowires with a bulk Dzyaloshinskii–Moriya interaction and easy-plane anisotropy. We show that this system allows the nucleation of a metastable toron chain even when no out-of-plane anisotropy exists in the nanowire’s top and bottom surfaces, as usually required. The number of nucleated torons depends on the nanowire length and the strength of an external magnetic field applied to the system. The size of each toron depends on the fundamental magnetic interactions and can be controlled by external stimuli, allowing the use of these magnetic textures as information carriers or nano-oscillator elements. Our results evidence that the topology and structure of the torons yield a wide variety of behaviors, revealing the complex nature of these topological textures, which should present an exciting interaction dynamic, depending on the initial conditions.

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Diao, Yu, Lei Liu, Sihao Xia et Yike Kong. « Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method ». International Journal of Modern Physics B 31, n^o 12 (10 mai 2017) : 1750084. http://dx.doi.org/10.1142/s0217979217500849.

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To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.

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BERTNESS, KRIS, NORMAN SANFORD, JOHN SCHLAGER, ALEXANA ROSHKO, TODD HARVEY, PAUL BLANCHARD, MATTHEW BRUBAKER, ANDREW HERRERO et ARIC SANDERS. « CATALYST-FREE GAN NANOWIRES AS NANOSCALE LIGHT EMITTERS ». International Journal of High Speed Electronics and Systems 21, n^o 01 (mars 2012) : 1250003. http://dx.doi.org/10.1142/s0129156412500036.

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Catalyst-free growth of GaN nanowires with molecular beam epitaxy produces material of exceptionally high quality with long minority-carrier lifetimes and low surface recombination velocity. The nanowires grow by thermodynamic driving forces that enhance the sticking coefficient of incoming reagents to the end facets of the nanowire while inhibiting growth on the m-plane sidewalls. Photoluminescence (PL) studies confirm that the material is essentially free of detrimental chemical impurities and crystalline defects. The nanowires are readily excited to lasing with modest optical pump power. Recent progress in methods for selective epitaxy has made it possible to control both the diameter and placement of the nanowires. Despite the high material quality, the energy-conversion efficiency of single nanowire LEDs remains low. The primary limitation appears to be optimizing the p-type doping with Mg , which is both a growth and a measurement problem.

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Дубровский, В. Г., et И. В. Штром. « Кинетика роста планарных нитевидных нанокристаллов ». Письма в журнал технической физики 46, n^o 20 (2020) : 15. http://dx.doi.org/10.21883/pjtf.2020.20.50149.18440.

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A kinetic equation is obtained which describes the elongation rate of planar semiconductor nanowires growing via the vapor-liquid-solid mechanism in the substrate plane. Theoretical analysis of different regimes depending on the nanowire radius and epitaxial conditions shows that planar growth of nanowires can be limited by either the Gibbs-Thomson effect in a catalyst droplet (for small droplet size) or surface diffusion of adatoms (for larger nanowire radii. Diffusion-like dependence of the growth rate on the nanowire radius R has the form R^(-m), where the power exponent equal 1, 3/2 or 2 depending on the mechanism of surface diffusion transport.

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Zou, J., et X. F. Li. « Effect of the Casimir Force on Buckling of a Double-Nanowire System with Surface Effects ». International Journal of Structural Stability and Dynamics 18, n^o 10 (octobre 2018) : 1850118. http://dx.doi.org/10.1142/s0219455418501183.

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Structural stability of a double-nanowire system with surface effects subjected to axial compressive forces is analyzed. Taking into account the Casimir force between the two nanowires, two coupled governing equations for buckling of a double-nanowire system are derived. For four typical end supports including simply-supported, clamped, cantilevered, and clamped-pinned double-nanowire systems, the characteristic equations are derived and the critical loads are determined for the out-of-phase in-plane buckling. Numerical results indicate that positive surface elasticity enhances the load-carrying capacity of the nanowires, and the reverse is also true. The Casimir force and residual surface tension always increase the critical loads.

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Hong, Ie-Hong, et Sheng-Wen Liu. « Observation of the Magnetization Reorientation in Self-Assembled Metallic Fe-Silicide Nanowires at Room Temperature by Spin-Polarized Scanning Tunneling Spectromicroscopy ». Coatings 9, n^o 5 (10 mai 2019) : 314. http://dx.doi.org/10.3390/coatings9050314.

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The quasi-periodic magnetic domains in metallic Fe-silicide nanowires self-assembled on the Si(110)-16 × 2 surface have been observed at room temperature by direct imaging of both the topographic and magnetic structures using spin-polarized scanning tunneling microscopy/spectroscopy. The spin-polarized differential conductance (dI/dV) map of the rectangular-sectional Fe-silicide nanowire with a width and height larger than 36 and 4 nm, respectively, clearly shows an array of almost parallel streak domains that alternate an enhanced (reduced) density of states over in-plane (out-of-plane) magnetized domains with a magnetic period of 5.0 ± 1.0 nm. This heterostructure of magnetic Fe-silicide nanowires epitaxially integrated with the Si(110)-16 × 2 surface will have a significant impact on the development of Si-based spintronic nanodevices.

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Zhao, S., L. Clime, K. Chan, F. Normandin, H. Roberge, A. Yelon, R. W. Cochrane et T. Veres. « Statistical Study of Effective Anisotropy Field in Ordered Ferromagnetic Nanowire Arrays ». Journal of Nanoscience and Nanotechnology 7, n^o 1 (1 janvier 2007) : 381–86. http://dx.doi.org/10.1166/jnn.2007.18039.

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Soft ferromagnetic nanowire arrays were obtained by electrodeposition of Co–Fe–P alloy into the pores of high quality home-made anodized aluminum oxide (AAO) templates. Bath acidity and current density were the two parameters used in order to tailor the orientation of local anisotropy axes in individual nanowires. In order to quantify the influence of the induced anisotropies on the magnetization processes in individual nanowires, the in-plane magnetization loops of the arrays are modeled as log-normal distributions of Stoner-Wohlfarth transverse magnetization processes. Using the lognormal mean parameter as an approximation for the saturation applied field of the array, we compute the effective anisotropy of the nanowires, which is found to increase with the pH of the electrodeposition bath.

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Wang, Jingchun, Floriano Cuccureddu, Rafael Ramos, Cormac Ó. Coileáin, Igor V. Shvets et Han-Chun Wu. « Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires ». SPIN 09, n^o 01 (mars 2019) : 1950004. http://dx.doi.org/10.1142/s2010324719500048.

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We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

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Giraldo-Daza, Helver Augusto, José Darío Agudelo-Giraldo, César Leandro Londoño-Calderón et Henry Reyes-Pineda. « Structural Disorder of CuO, ZnO, and CuO/ZnO Nanowires and Their Effect on Thermal Conductivity ». Crystals 13, n^o 6 (15 juin 2023) : 953. http://dx.doi.org/10.3390/cryst13060953.

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In this work, the structural defects and the thermal conductivity of CuO, ZnO, and CuO/ZnO nanowires have been studied, using molecular dynamics simulation with COMB3 potential. The initial parameters and atoms positions were taken from reports of bulk materials with tenorite and wurtzite structures, respectively. Nanowires were grown along the c-axis, as observed experimentally. The results confirm the defects apparition in the systems after simulation with a formation of grains to reduce the energy of the nanowires. In the CuO nanowires case, the lack of periodicity in the basal plane causes a contraction effect over the network parameter b of the monoclinic structure with a Cu-O distance reduction. [A constriction effect on inclined planes, as a product of surface charges, deforms the nanowire, generating undulations. In ZnO nanowires, a decrease in the Zn-Zn distance produced a contraction in the nanowire length. A constriction effect was evident on the surface charges. It presented a bond reduction effect, which was larger at the ends of the nanowire. In CuO/ZnO nanowires, the structural defects come from the distortions of the crystalline lattice of the ZnO rather than CuO. The thermal conductivity of the nanowires was calculated at temperatures between 200 K and 600 K using the Green–Kubo equation. Results showed similar values to those reported experimentally, and the characteristic maximum with similar trends to those observed in semiconductors. Our results suggest that structural defects appear in nanowires grown on the free substrate, and are not related to the lattice mismatch.

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Bürger, Jasmin-Clara, Sebastian Gutsch et Margit Zacharias. « Transition from freestanding SnO2 nanowires to laterally aligned nanowires with a simulation-based experimental design ». Beilstein Journal of Nanotechnology 11 (28 mai 2020) : 843–53. http://dx.doi.org/10.3762/bjnano.11.69.

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In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.

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Shi, Feng, Zhao Zhu Yang et Cheng Shan Xue. « Effect of Ammoniating Temperature on Growth of GaN Nanowires with V as Intermediate Layer ». Materials Science Forum 663-665 (novembre 2010) : 356–60. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.356.

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GaN nanowires have been successfully grown on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/V thin films. The influence of ammoniating temperature on the growth of GaN nanowires was analyzed in particular. The results demonstrate that ammoniating temperature has great influence on the growth of GaN nanowires. GaN nanowires are single crystal GaN with a hexagonal wurtzite structure and high crystalline quality after ammoniation at 900 oC for 15 min, which are straight and smooth with uniform thickness along the spindle direction and high crystalline quality, 50 nm in diameter and several tens of microns in length with good emission properties, and the growth direction of the nanowire is along the preferred (002) plane. A clear red-shift of the band-gap emission has occurred. The growth mechanism is also discussed briefly.

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Béron, F., L. Clime, M. Ciureanu, D. Ménard, R. W. Cochrane et A. Yelon. « Magnetostatic Interactions and Coercivities of Ferromagnetic Soft Nanowires in Uniform Length Arrays ». Journal of Nanoscience and Nanotechnology 8, n^o 6 (1 juin 2008) : 2944–54. http://dx.doi.org/10.1166/jnn.2008.159.

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First-order reversal curve diagrams have been used to investigate magnetostatic interactions and average coercivity of individual wires in soft ferromagnetic uniform length nanowire arrays. We present a method for identifying these physical parameters on the out-of-plane first-order reversal curve diagrams: the position of the irreversible part on the critical axis is a good approximation to the average value of the nanowire coercivity and the maximum interaction field is equal to the interaction field at saturation. Their dependence upon material (CoFeB and Ni) and nanowire length are presented. The magnetostatic interactions increase linearly with length, in agreement with a model developed previously. The global array coercivity, obtained from magnetization curves, is generally lower than the apparent average coercivity for individual nanowires. This coercivity reduction increases linearly with the magnetostatic interactions. The general shape of the out-of-plane first-order reversal curve diagrams is compared with those obtained from a theoretical moving Preisach model.

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Wang, Fen Ying, Wei Sun, Yan Feng Dai, Yi Wang Chen, Jian Wei Zhao et Xiao Lin. « Influence of Atomic Defect on the Deformation Properties of Nanowires Subjected to Uniaxial Tension ». Advanced Materials Research 873 (décembre 2013) : 139–46. http://dx.doi.org/10.4028/www.scientific.net/amr.873.139.

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Atomic defects play an important role in the brittle deformation of nanowires at low temperatures. With molecular dynamics simulations, we study the influence of vacancy defects on the deformation and breaking behaviors of [10 oriented single-crystal gold nanowires at 50 and 150 K. The size of the nanowire is 10a × 10a × 30a (a stands for lattice constant, 0.408 nm for gold). It is shown that good crystalline structure appears in the whole deformation process, and it is in a brittle way at low temperature. The nanowire breaking behavior is sensitive to atomic vacancies when the atomic vacancy ratio is 1% in single-layer crystalline plane. Within the limitation of vacancy-induced breaking of the nanowire, the mechanical strengths increase under atomic vacancies. However, it decreases with the defect ratio increasing.

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Saleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed et Muhammad Asghar. « Phase Control Growth of InAs Nanowires by Using Bi Surfactant ». Coatings 12, n^o 2 (15 février 2022) : 250. http://dx.doi.org/10.3390/coatings12020250.

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To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can be fabricated using bismuth (Bi) as a surfactant. For this purpose, catalyst free selective area epitaxial growth of InAs nanowires was performed using molecular beam epitaxy (MBE). During the growth, Bi was used which may act as a wetting agent influencing the surface energy at growth plane ends, promoting wurtzite crystal phase growth. For a demonstration, wurtzite and zincblende InAs nanowires were obtained with and without using Bi-flux. Photoluminescence spectroscopy (PL) analysis of the nanowires indicates a strong correlation between wurtzite phase and the Bi-flux. It is observed that the bandgap energy of wurtzite and zincblende nanowires are ∼0.50 eV and ∼0.42 eV, respectively, and agree well with theoretical estimated bandgap of corresponding InAs crystal phases. A blue shift in PL emission peak energy was found with decreasing nanowire diameter. The controlled wurtzite and zincblende crystal phase and its associated heterostructure growth of InAs nanowires on Si may open up new opportunities in bandgap engineering and related device applications integrated on Si. Furthermore, this work also illustrates that Bi as a surfactant could play a dynamic role in the growth mechanism of III-V compound semiconductors.

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Tarasevich, Yuri Yu, Andrei V. Eserkepov et Irina V. Vodolazskaya. « Percolation and electrical conduction in random systems of curved linear objects on a plane : Computer simulations along with a mean-field approach ». Journal of Applied Physics 133, n^o 13 (7 avril 2023) : 135106. http://dx.doi.org/10.1063/5.0146989.

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Using computer simulations, we have studied the percolation and the electrical conductance of two-dimensional, random percolating networks of curved, zero-width metallic nanowires. We mimicked the curved nanowires using circular arcs. The percolation threshold decreased as the aspect ratio of the arcs increased. Comparison with published data on the percolation threshold of symmetric quadratic Bézier curves suggests that when the percolation of slightly curved wires is simulated, the particular choice of curve to mimic the shape of real-world wires is of little importance. Considering the electrical properties, we took into account both the nanowire resistance per unit length and the junction (nanowire/nanowire contact) resistance. Using mean-field approximation (MFA), we derived the total electrical conductance of nanowire-based networks as a function of their geometrical and physical parameters. The MFA predictions have been confirmed by our Monte Carlo numerical simulations. For our random homogeneous and isotropic systems of conductive curved wires, the electric conductance decreased as the wire shape changed from a stick to a ring when the wire length remained fixed.

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Kiani, Keivan. « Vibrations and instability of double-nanowire-systems as electric current carriers ». Modern Physics Letters B 29, n^o 25 (20 septembre 2015) : 1550144. http://dx.doi.org/10.1142/s0217984915501444.

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Current-carrying nanowires are expected to be building blocks of the upcoming micro-nano-electromechanical devices, however, little is known on their dynamic interactions in a bundle. As a pivotal step towards realizing such a crucial mechanism, this work is devoted to vibrations and instability of a double-nanowire-system as an electric current carrier. Using Biot–Savart law, the Lorentz interactional forces between doubly parallel current-carrying nanowires are evaluated. Accounting for the surface elastic energy, equations of motion pertinent to the in-plane and out-of-plane vibrations are established. Using analytical techniques, the explicit expressions of both static and purely dynamic parts of the nanowires’ displacements are obtained. For each component of the transverse displacement field, two major vibration modes are observed: in-phase and out-of-phase modes. The frequencies associated with these vibration modes are analytically calculated. Further, the condition corresponds to the dynamic instability of the system is discovered, and the roles of initial tensile force, electric current, and interwire distance on frequencies and stability of the system are addressed.

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Arman, Tanvir Alam, Abdurrahman Yilmaz, Andres O. Godoy, Wipula Priya Rasika Liyanage, Dmitri Routkevitch, Siddharth Komini Babu, Jasna Jankovic, Ugur Pasaogullari et Jacob S. Spendelow. « (2022-2023 ECS Toyota Young Investigator Fellowship) Enhanced Water Electrolysis Using Layered Coaxial Nanowire Electrodes ». ECS Meeting Abstracts MA2023-02, n^o 42 (22 décembre 2023) : 2074. http://dx.doi.org/10.1149/ma2023-02422074mtgabs.

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Novel electrocatalytic approaches are urgently needed to increase the energy efficiency and decrease the cost of hydrogen production by PEM water electrolyzers. Recently, we developed a novel catalytic platform, the layered coaxial nanowire electrode (LCANE), which enables PEM water electrolyzers with higher energy efficiency and reduced usage of precious metal catalysts. Electrolyzers based on the LCANE approach use a thin film of IrO2-decorated Pt that is intimately interfaced with an ionomer membrane in the form of vertically-aligned coaxial nanowires. Each nanowire consists of a Pt shell encapsulating an ionomer core, with the Pt shell further decorated by IrO2 clusters. The top region of each nanowire bends to form a layer of in-plane aligned Pt/IrO2 nanowires, providing excellent in-plane electronic conductivity. This unique catalyst/electrode geometry offers several key advantages. By localizing ionomer within the nanowire core, the exterior surface of the catalyst remains free from ionomer, eliminating thin-film transport barriers and preventing catalyst poisoning by ionomer adsorption. The vertically aligned sections of the nanowires provide non-tortuous transport of reactants and products, with abundant pore space for facile access of water and removal of oxygen. Close integration of catalyst and ionomer provides improved proton access and eliminates stranding of catalyst. By incorporating catalyst in the form of a thin film and replacing some of the Ir with Pt, lower Ir loading (as low as 0.1 mg/cm2) is achieved without sacrificing surface area or performance. Acknowledgment This work was supported by the ECS-Toyota Young Investigator Fellowship and by the Laboratory Directed Research and Development program at Los Alamos National Laboratory.

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Topp, Jesco, Georg Duerr, Klaus Thurner et Dirk Grundler. « Reprogrammable magnonic crystals formed by interacting ferromagnetic nanowires ». Pure and Applied Chemistry 83, n^o 11 (7 juillet 2011) : 1989–2001. http://dx.doi.org/10.1351/pac-con-11-03-06.

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Spin-wave (SW) modes are addressed which are confined in thin individual Ni80Fe20 nanowires with widths ranging from 220 to 360 nm. In periodic arrays with an edge-to-edge separation of down to 100 nm, confined modes of neighboring nanowires are found to couple coherently and form allowed minibands and forbidden frequency gaps. This gives rise to a one-dimensional magnonic crystal. We present all-electrical SW spectroscopy data and micromagnetic simulations. We find that the nanowire arrays allow us to reprogram the relevant magnonic band structure via the magnetic history. A forbidden frequency gap of up to about 1 GHz is controlled by an in-plane magnetic field being as small as a few mT.

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Yu, Linwei, Maher Oudwan, Oumkelthoum Moustapha, Franck Fortuna et Pere Roca i Cabarrocas. « Guided growth of in-plane silicon nanowires ». Applied Physics Letters 95, n^o 11 (14 septembre 2009) : 113106. http://dx.doi.org/10.1063/1.3227667.

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Mohammad, Rezek, et Şenay Katırcıoğlu. « Structural stability and electronic properties of different cross-sectional unstrained and rectangular cross-sectional strained GaP nanowires ». International Journal of Modern Physics B 33, n^o 04 (10 février 2019) : 1950006. http://dx.doi.org/10.1142/s0217979219500061.

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The stability and electronic properties of the hexagonal, trigonal and rectangular cross-sectional GaP nanowires in wurtzite (WZ) phase are investigated using full potential linear augmented plane waves method. The rectangular cross-sectional nanowires are found more stable than the hexagonal and trigonal ones. The indirect bandgap structure of the nanowires is transformed into the direct bandgap one at a critical size connected to the geometry of the cross-section. The energy bandgap of the nanowires in the same cross-sectional group is enlarged by the quantum size effect. The effective carrier masses in the nanowires, calculated to be larger than those in bulk GaP, are found to slightly increase with the decrease in the size of the nanowires in the same cross-sectional groups. The mechanical strain effect on the electronic band structure is investigated for the rectangular GaP nanowires under the uniaxial and lateral strains. It is found that the indirect bandgap structures of the rectangular nanowires are transformed into the direct bandgap ones by the uniaxial high compression strains. It is also found that this transformation can be triggered by small uniaxial tensile and high lateral tensile strains in addition to the effect of size increase. The energy bandgap of the rectangular nanowires is determined to be narrowed by the uniaxial/lateral strains. It is obtained that the small rectangular nanowire is in the indirect bandgap structure for all the lateral strains and the larger one can be transformed into the direct bandgap structure more easily by the [Formula: see text]-directional lateral tensile strains compared to the [Formula: see text]-directional ones. The effective electron and hole masses are found to be reduced by the uniaxial highest tensile and compression strains of this work. It is determined that the lateral strains are not effective in making the electrons of the nanowires more mobile, but the [Formula: see text]-directional lateral high tensile strains make the holes more mobile by reducing the effective hole mass in the small rectangular nanowire.

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Yunlong, Zhang, Zhang Yumin, Hu Ming et Li Jinping. « Fabrication of SiC Composites with Synergistic Toughening of Carbon Whisker andIn Situ3C-SiC Nanowire ». Advances in Materials Science and Engineering 2016 (2016) : 1–7. http://dx.doi.org/10.1155/2016/2565137.

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The SiC composites with synergistic toughening of carbon whisker andin situ3C-SiC nanowire have been fabricated by hot press sinter technology and annealed treatment technology. Effect of annealed time on the morphology of SiC nanowires and mechanical properties of theCw/SiC composites was surveyed in detail. The appropriate annealed time improved mechanical properties of theCw/SiC composites. The synergistic effect of carbon whisker and SiC nanowire can improve the fracture toughness forCw/SiC composites. The vapor-liquid-solid growth (VLS) mechanism was proposed. TEM photo showed that 3C-SiC nanowire can be obtained with preferential growth plane ({111}), which corresponded to interplanar spacing about 0.25 nm.

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Ziti, Ikram, M. R. Britel et Chumin Wang. « Atomic-Orbital and Plane-Wave Approaches to Ferromagnetic Properties of NixFe1-x Nanowires ». MRS Advances 2, n^o 9 (2017) : 507–12. http://dx.doi.org/10.1557/adv.2017.159.

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ABSTRACTThere are growing interests on magnetic nanowires, due to their potential applications in magnetic sensors and recording devices. In this work, we report a comparative ab-initio study based on the Density Functional Theory (DFT) of NixFe1-x nanowire periodic arrays by using atomic-orbital and plane-wave basis respectively through DMol3 and CASTEP codes. After performing the geometry optimization, we calculate the spin-polarized electronic density of states, average interatomic distance, and magnetic moments. For pure Ni nanowires (x = 1, the dependence of the magnetic moment obtained from CASTEP calculations on the cutoff energy, as well as that from DMol3 on the thermal smearing parameter is analyzed in detail. Both ab-initio calculations predict close magnetic moments for each x, being slightly larger those of DMol3 obtained with significantly less computing cost. Finally, these DFT results are compared with experimental data and a good agreement is observed.

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Chang, Kow-Ming, Chiung-Hui Lai, Chu-Feng Chen, Po-Shen Kuo, Yi-Ming Chen, Tai-Yuan Chang, Allen Jong-Woei Whang, Yi-Lung Lai, Huai-Yi Chen et Ing-Jar Hsieh. « Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors ». Journal of Nanoscience 2014 (11 juin 2014) : 1–7. http://dx.doi.org/10.1155/2014/961720.

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Nanowires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nanowires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Preoxidation treatment also improved the sensitivity of SiGe nanowires because the Si-F binding was held at a more stable interface state compared to bare nanowire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N2 plasma posttreatment or the low-temperature postannealing due to the suppression of outdiffusion of Ge and F atoms from the SiGe nanowire surface.

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Davtyan, Arman, Thilo Krause, Dominik Kriegner, Ali Al-Hassan, Danial Bahrami, Seyed Mohammad Mostafavi Kashani, Ryan B. Lewis et al. « Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging ». Journal of Applied Crystallography 50, n^o 3 (13 avril 2017) : 673–80. http://dx.doi.org/10.1107/s1600576717004149.

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Coherent X-ray diffraction imaging at symmetrichhhBragg reflections was used to resolve the structure of GaAs/In0.15Ga0.85As/GaAs core–shell–shell nanowires grown on a silicon (111) substrate. Diffraction amplitudes in the vicinity of GaAs 111 and GaAs 333 reflections were used to reconstruct the lost phase information. It is demonstrated that the structure of the core–shell–shell nanowire can be identified by means of phase contrast. Interestingly, it is found that both scattered intensity in the (111) plane and the reconstructed scattering phase show an additional threefold symmetry superimposed with the shape function of the investigated hexagonal nanowires. In order to find the origin of this threefold symmetry, elasticity calculations were performed using the finite element method and subsequent kinematic diffraction simulations. These suggest that a non-hexagonal (In,Ga)As shell covering the hexagonal GaAs core might be responsible for the observation.

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Mabuchi, Yota, Rashid Norhana Mohamed, Xuyang Li, Jianbo Liang, Naoki Kishi et Tetsuo Soga. « Macroscale synthesis of CuO nanowires on FTO plane substrate ». Modern Physics Letters B 33, n^o 11 (18 avril 2019) : 1950138. http://dx.doi.org/10.1142/s0217984919501380.

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This study aims to fabricate copper oxide (CuO) nanowires by annealing a copper film formed on a charged film of fluorine-doped tin oxide (FTO). However, from the viewpoint of stress and growth of nanowires, it is difficult to mass-produce CuO nanowires on the entire region of the macro area on the plane substrate. In the proposed study, this was made possible by modifying the substrate’s structure.

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Xu, Mingkun, Zhaoguo Xue, Linwei Yu, Shengyi Qian, Zheng Fan, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen et Pere Roca i Cabarrocas. « Operating principles of in-plane silicon nanowires at simple step-edges ». Nanoscale 7, n^o 12 (2015) : 5197–202. http://dx.doi.org/10.1039/c4nr06531j.

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Kamimura, Himeyo, Masamitsu Hayashida et Takeshi Ohgai. « CPP-GMR Performance of Electrochemically Synthesized Co/Cu Multilayered Nanowire Arrays with Extremely Large Aspect Ratio ». Nanomaterials 10, n^o 1 (18 décembre 2019) : 5. http://dx.doi.org/10.3390/nano10010005.

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Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit.

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Zhuang, Huizhao, Dexiao Wang, Jiabing Shen, Chengshan Xue, Xiaokai Zhang et Hang Liu. « Fabrication and characterization of novel bicrystalline ZnO nanowires ». Journal of Materials Research 24, n^o 8 (août 2009) : 2536–40. http://dx.doi.org/10.1557/jmr.2009.0313.

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Two types of novel bicrystalline ZnO nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the nanowires have been extensively investigated. One type of the nanowires has agg twin boundary extending down its entire length with twinning plane and the zone axis. The other type is those nanowires with twin crystal-single crystal junction. The twin defects in the Sn-Zn alloy droplets in the initial growth process are proposed for interpreting the growth of these two kinds of bicrystalline nanowires.

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Yu, Linwei, Wanghua Chen, Benedict O’Donnell, Gilles Patriarche, Sophie Bouchoule, Philippe Pareige, Regis Rogel, Anne Claire Salaun, Laurent Pichon et Pere Roca i Cabarrocas. « Growth-in-place deployment of in-plane silicon nanowires ». Applied Physics Letters 99, n^o 20 (14 novembre 2011) : 203104. http://dx.doi.org/10.1063/1.3659895.

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da Câmara Santa Clara Gomes, Tristan, Nicolas Marchal, Flavio Abreu Araujo, Yenni Velázquez Galván, Joaquín de la Torre Medina et Luc Piraux. « Magneto-Transport in Flexible 3D Networks Made of Interconnected Magnetic Nanowires and Nanotubes ». Nanomaterials 11, n^o 1 (16 janvier 2021) : 221. http://dx.doi.org/10.3390/nano11010221.

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Electrochemical deposition of interconnected nanowires and nanotubes made of ferromagnetic metals into track-etched polycarbonate templates with crossed nanochannels has been revealed suitable for the fabrication of mechanically stable three-dimensional magnetic nanostructures with large surface area. These 3D networks embedded into flexible polymer membranes are also planar and lightweight. This fabrication technique allows for the control of the geometric characteristics and material composition of interconnected magnetic nanowire or nanotube networks, which can be used to fine-tune their magnetic and magneto-transport properties. The magnetostatic contribution to the magnetic anisotropy of crossed nanowire networks can be easily controlled using the diameter, packing density, or angle distribution characteristics. Furthermore, the fabrication of Co and Co-rich NiCo alloy crossed nanowires with textured hcp phases leads to an additional significant magnetocrystalline contribution to the magnetic anisotropy that can either compete or add to the magnetostatic contribution. The fabrication of an interconnected nanotube network has also been demonstrated, where the hollow core and the control over the tube wall thickness add another degree of freedom to control the magnetic properties and magnetization reversal mechanisms. Finally, three-dimensional networks made of interconnected multilayered nanowire with a succession of ferromagnetic and non-magnetic layers have been successfully fabricated, leading to giant magnetoresistance responses measured in the current-perpendicular-to-plane configuration. These interconnected nanowire networks have high potential as integrated, reliable, and stable magnetic field sensors; magnetic devices for memory and logic operations; or neuromorphic computing.

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Kac, Malgorzata, Anna Mis, Beata Dubiel, Kazimierz Kowalski, Arkadiusz Zarzycki et Iwona Dobosz. « Template-Assisted Iron Nanowire Formation at Different Electrolyte Temperatures ». Materials 14, n^o 15 (22 juillet 2021) : 4080. http://dx.doi.org/10.3390/ma14154080.

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We studied the morphology, structure, and magnetic properties of Fe nanowires that were electrodeposited as a function of the electrolyte temperature. The nucleation mechanism followed instantaneous growth. At low temperatures, we observed an increase of the total charge reduced into the templates, thus suggesting a significant increase in the degree of pore filling. Scanning electron microscopy images revealed smooth nanowires without any characteristic features that would differentiate their morphology as a function of the electrolyte temperature. X-ray photoelectron spectroscopy studies indicated the presence of a polycarbonate coating that covered the nanowires and protected them against oxidation. The X-ray diffraction measurements showed peaks coming from the polycrystalline Fe bcc structure without any traces of the oxide phases. The crystallite size decreased with an increasing electrolyte temperature. The transmission electron microscopy measurements proved the fine-crystalline structure and revealed elongated crystallite shapes with a columnar arrangement along the nanowire. Mössbauer studies indicated a deviation in the magnetization vector from the normal direction, which agrees with the SQUID measurements. An increase in the electrolyte temperature caused a rise in the out of the membrane plane coercivity. The studies showed the oxidation resistance of the Fe nanowires deposited at elevated electrolyte temperatures.

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Lee, Byong-Taek, Rajat Kanti Paul, Kap-Ho Lee et Hai-Doo Kim. « Synthesis of Si2N2O nanowires in porous Si2N2O–Si3N4 substrate using Si powder ». Journal of Materials Research 22, n^o 3 (mars 2007) : 615–20. http://dx.doi.org/10.1557/jmr.2007.0070.

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The formation of synthesized Si2N2O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the Si2N2O nanowires having a high aspect ratio of about 50–80 nm was found in the porous Si2N2O–Si3N4 substrate to which 6 wt% C was added. The synthesized Si2N2O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of Si2N2O nanowires showed a strong, stable green emission at 540 nm.

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Fernandez-Roldan, Jose, Dieivase Chrischon, Lucio Dorneles, Oksana Chubykalo-Fesenko, Manuel Vazquez et Cristina Bran. « A Comparative Study of Magnetic Properties of Large Diameter Co Nanowires and Nanotubes ». Nanomaterials 8, n^o 9 (6 septembre 2018) : 692. http://dx.doi.org/10.3390/nano8090692.

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A comparative study of the magnetic properties of the arrays of Co nanowires and nanotubes with large external diameters (180 nm) has been carried out. The nanowires/nanotubes were grown by electrodeposition into the self-assembled pores of anodic alumina membranes. The experimental study of their magnetic behavior was focused on the angular dependence of hysteresis loops and their parameters. In both nanowire and nanotube arrays, from the analysis of experimental data, effective longitudinal magnetic anisotropy is concluded, which is stronger in the case of the nanotube array. In addition, the extremely small remanence observed for all loops indicates the important role played by magnetostatic interactions. Micromagnetic simulations were first performed considering intrinsic shape and magnetocrystalline anisotropy terms, together with an effective easy-plane anisotropy to account for those magnetostatic interactions. A qualitative agreement between experiments and simulations is found despite the complexity introduced by the intrinsic and extrinsic array properties (i.e., large diameters, grain structure, and array configuration). In addition, simulations were also carried out for individual nanowire/nanotube with a particular emphasis to understand their differences at the remanence, due to pure geometry contribution.

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Wang, Fenying, Yanfeng Dai, Jianwei Zhao et Qianjin Li. « Uniaxial tension-induced fracture in gold nanowires with the dependence on size and atomic vacancies ». Phys. Chem. Chem. Phys. 16, n^o 45 (2014) : 24716–26. http://dx.doi.org/10.1039/c4cp03556a.

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Marchal, Nicolas, Tristan da Câmara Santa Clara Gomes, Flavio Abreu Araujo et Luc Piraux. « Giant Magnetoresistance and Magneto-Thermopower in 3D Interconnected NixFe1−x/Cu Multilayered Nanowire Networks ». Nanomaterials 11, n^o 5 (27 avril 2021) : 1133. http://dx.doi.org/10.3390/nano11051133.

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The versatility of the template-assisted electrodeposition technique to fabricate complex three-dimensional networks made of interconnected nanowires allows one to easily stack ferromagnetic and non-magnetic metallic layers along the nanowire axis. This leads to the fabrication of unique multilayered nanowire network films showing giant magnetoresistance effect in the current-perpendicular-to-plane configuration that can be reliably measured along the macroscopic in-plane direction of the films. Moreover, the system also enables reliable measurements of the analogous magneto-thermoelectric properties of the multilayered nanowire networks. Here, three-dimensional interconnected NixFe1−x/Cu multilayered nanowire networks (with 0.60≤x≤0.97) are fabricated and characterized, leading to large magnetoresistance and magneto-thermopower ratios up to 17% and −25% in Ni80Fe20/Cu, respectively. A strong contrast is observed between the amplitudes of magnetoresistance and magneto-thermoelectric effects depending on the Ni content of the NiFe alloys. In particular, for the highest Ni concentrations, a strong increase in the magneto-thermoelectric effect is observed, more than a factor of 7 larger than the magnetoresistive effect for Ni97Fe3/Cu multilayers. This sharp increase is mainly due to an increase in the spin-dependent Seebeck coefficient from −7 µV/K for the Ni60Fe40/Cu and Ni70Fe30/Cu nanowire arrays to −21 µV/K for the Ni97Fe3/Cu nanowire array. The enhancement of the magneto-thermoelectric effect for multilayered nanowire networks based on dilute Ni alloys is promising for obtaining a flexible magnetic switch for thermoelectric generation for potential applications in heat management or logic devices using thermal energy.

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Mansell, R., A. Beguivin, D. C. M. C. Petit, A. Fernández-Pacheco, J. H. Lee et R. P. Cowburn. « Controlling nucleation in perpendicularly magnetized nanowires through in-plane shape ». Applied Physics Letters 107, n^o 9 (31 août 2015) : 092405. http://dx.doi.org/10.1063/1.4930152.

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Berdnikov, Y., N. V. Sibirev, R. R. Reznik et A. V. Redkov. « The model for in-plane and out-of-plane growth regimes of semiconductor nanowires ». Journal of Physics : Conference Series 1410 (décembre 2019) : 012049. http://dx.doi.org/10.1088/1742-6596/1410/1/012049.

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Xu, Chun Hua, Kelvin Leung et Charles Surya. « Synthetics of ZnO Nanowires on GaN/Sapphire Substrate by Gold Catalyst ». Advanced Materials Research 339 (septembre 2011) : 3–6. http://dx.doi.org/10.4028/www.scientific.net/amr.339.3.

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ZnO nanowires were grown on Au-coated GaN layer on c-plane sapphire by chemical vapor deposition (CVD). As-prepared ZnO oxides were characterized by a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results show that the growth of ZnO nanowires strongly depends on the location of GaN/sapphire substrates. The diameters of the resulting nanowires were in the range 60 nm with typical length about 10μm. The formation of ZnO nanowires with different morphologies at various positions of the substrate is explained by the mechanisms of vapor-solid and vapor-liquid-solid, respectively.

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Jia, Chunyang, Dae-Woo Jeon, Jianlong Xu, Xiaoyan Yi, Ji-Hyeon Park et Yiyun Zhang. « Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition ». Nanomaterials 10, n^o 6 (28 mai 2020) : 1031. http://dx.doi.org/10.3390/nano10061031.

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In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.

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Yang, Su Hua, Yi Ming Hsh, Li Hsiang Wang, Ming Yu Chang et Ting Jen Hsueh. « Photoelectric Characteristics of ZnO Nanowires Grown on AZO Thin Film ». Advanced Materials Research 646 (janvier 2013) : 51–54. http://dx.doi.org/10.4028/www.scientific.net/amr.646.51.

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The vapor transport method was used to grow ZnO nanowires on ZnO:Al (AZO) deposited silicon substrate. The optimal characteristic of ZnO nanowires was grown at 1100°C for 70 min, together with a ZnO/graphite weight ratio of 1:1 and N2/O2 flow ratio of 7:6. ZnO nanowires had a single crystalline structure and grew with a prefer direction in the (002) plane. Photoluminescence measurement showed that UV and visible green emission bands were observed. The turn-on electric field of ZnO nanowires was 0.11 V/μm and the maximum field emission current density was 1.8 mA/cm2. A high field enhancement factor of 1782 was evaluated.

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Cui, Yugui, Yi Chu, Zhencun Pan, Yingjie Xing, Shaoyun Huang et Hongqi Xu. « Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB₆ nanowires ». Nanoscale 13, n^o 48 (2021) : 20417–24. http://dx.doi.org/10.1039/d1nr07047a.

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The anisotropic magnetoresistance reveals a signature of spin-momentum inter-locking in surface-states of SmB6 nanowires. Figure (a) in-plane magnetic field magnetoresistance; (b) temperature dependences of the anisotropic magnetoresistance.

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Gou, Guangyang, Jia Sun, Chuan Qian, Yinke He, Ling-an Kong, Yan Fu, Guozhang Dai, Junliang Yang et Yongli Gao. « Artificial synapses based on biopolymer electrolyte-coupled SnO2nanowire transistors ». Journal of Materials Chemistry C 4, n^o 47 (2016) : 11110–17. http://dx.doi.org/10.1039/c6tc03731c.

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Caroff, P., K. A. Dick, J. Johansson, M. E. Messing, K. Deppert et L. Samuelson. « Controlled polytypic and twin-plane superlattices in iii–v nanowires ». Nature Nanotechnology 4, n^o 1 (30 novembre 2008) : 50–55. http://dx.doi.org/10.1038/nnano.2008.359.

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Yu, Linwei, et Pere Roca i Cabarrocas. « (Invited) In-plane Silicon Nanowires for Field Effect Transistor Application ». ECS Transactions 37, n^o 1 (16 décembre 2019) : 147–54. http://dx.doi.org/10.1149/1.3600735.

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Alonso, M. Isabel, Ana Ruiz, María Alonso, Elena Bailo, Miquel Garriga, AlejandroMolero, Pablo O. Vaccaro et Alejandro R. Goñi. « Growth and Characterization of Epitaxial In-plane SiGe Alloy Nanowires ». Materials Today : Proceedings 2, n^o 2 (2015) : 548–56. http://dx.doi.org/10.1016/j.matpr.2015.05.075.

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Khranovskyy, V., M. O. Eriksson, G. Z. Radnoczi, A. Khalid, H. Zhang, P. O. Holtz, L. Hultman et R. Yakimova. « Photoluminescence study of basal plane stacking faults in ZnO nanowires ». Physica B : Condensed Matter 439 (avril 2014) : 50–53. http://dx.doi.org/10.1016/j.physb.2013.12.020.

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Pal, K., H. J. Maria, S. Thomas et M. L. N. M. Mohan. « Smart in-plane switching of nanowires embedded liquid crystal matrix ». Organic Electronics 42 (mars 2017) : 256–68. http://dx.doi.org/10.1016/j.orgel.2016.12.049.

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Akiyama, Toru, Tomoki Yamashita, Kohji Nakamura et Tomonori Ito. « Band Alignment Tuning in Twin-Plane Superlattices of Semiconductor Nanowires ». Nano Letters 10, n^o 11 (10 novembre 2010) : 4614–18. http://dx.doi.org/10.1021/nl1027099.

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Lord, Alex M., Michael B. Ward, Alex S. Walton, Jonathan Evans, Nathan Smith, Thierry G. Maffeis et Steve P. Wilks. « Examining the crystal growth that influences the electronic device output from vertical arrays of ZnO nanowires ». MRS Proceedings 1659 (2014) : 101–6. http://dx.doi.org/10.1557/opl.2014.131.

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ABSTRACTZnO nanowire (NW) arrays were examined with Transmission Electron Microscopy (TEM) in cross-section after preparation by Focused Ion Beam (FIB) milling. This technique revealed that ZnO nanowires grown using a Au catalyzed vapor technique typically have Au particles at the NW tips, and also randomly dispersed across the base crystal growth that joins adjacent NWs. It is shown the adjacent NWs and the combined base growth is one crystal structure which can be used as a back electrical contact making fabrication of vertical array devices possible. However, the base growth displays detrimental features such as embedded Au particles and lattice defects which can affect the electrical output through depletion regions and scattering centers. In an effort to overcome these problems we investigate a growth method that is nucleated through a minor alteration of the a-plane sapphire surface roughness via a weak chemical etch. Observations of various stages of the growth show the growth nucleates as separate nanoislands that grow in c-plane alignment with Sapphire (1-210), and as growth continues these islands meet and form a polycrystalline film. Further growth initiates nanowire growth and the formation of a single crystal base layer and NW structure that can cover several square millimeter’s. This allows high quality arrays that are relatively free from defects to be formed without any metals contamination and ready for further device processing.

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