Bibliographies thématiques / High temperature semiconductors

Littérature scientifique sur le sujet « High temperature semiconductors »

Auteur : Grafiati
Publié le 25 juillet 2024

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Articles de revues sur le sujet "High temperature semiconductors"

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TREW, R. J., et M. W. SHIN. « HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS ». International Journal of High Speed Electronics and Systems 06, no 01 (mars 1995) : 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
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Palmstrøm, Chris. « Epitaxial Heusler Alloys : New Materials for Semiconductor Spintronics ». MRS Bulletin 28, no 10 (octobre 2003) : 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.
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Ma, Xi Ying. « Study of the Electrical Properties of Monolayer MoS2 Semiconductor ». Advanced Materials Research 651 (janvier 2013) : 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.

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We present the study of the electrical properties of monolayer MoS2 in terms of semiconductor theory. The free electron and hole concentrations formulas in two-dimensional (2D) semiconductors have been developed based on three-dimensional (3D) semiconductors theory, and derived the intrinsic carrier concentration equation of 2D system. Using these equations, we simulated the intrinsic carrier concentration in monolayer MoS2 with temperature. The intrinsic carrier density in monolayer MoS2 increases exponentially with temperature, but it lows a few orders of magnitude than that of 3D semiconductor. It means that monolayer MoS2 based devices can operated at very high temperatures. Accordingly, the conductivity and resistivity were simulated for 2D MoS2, the former increases exponentially while the latter decreases with temperature or carrier concentration.
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WESSELS, B. W. « MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS ». SPIN 03, no 04 (décembre 2013) : 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
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Dezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe et Yutaka Oyama. « Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors ». Key Engineering Materials 500 (janvier 2012) : 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.

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An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.
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Guyenot, M., M. Reinold, Y. Maniar et M. Rittner. « Advanced wire bonding for high reliability and high temperature applications ». International Symposium on Microelectronics 2016, no 1 (1 octobre 2016) : 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.

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Abstract The next generation of switches for power electronic will be based on white band gap (WBG) semiconductor GaN or SiC. This materials supports higher switching current and high frequency. White band gap semiconductors enables higher application temperature. Certainly, high temperature capability is also to discuss in combination with high number of thermal cycles. For a frame module concept shows these paper a comparison of different joining techniques with the focus on the reliability issue on wire and ribbon bonding. Beside to the 1000 passive thermal cycles from −40°C to +125°C there are active thermals cycles for technology qualification required [3]. Depending on the application and mission profile a high thermal cycling capability is necessary. For this reason, new high temperature joining techniques for die attach, e.g. Silver sintering or diffusion soldering, were developed in the recent past [4]. All of this new joining techniques focusing on higher electrical, thermal and thermo-mechanical performance of power modules. By using an optimized metallization system for the WBG the numbers of thermal cycles can be increased and the maximum operating temperature advanced up to 300°C. In these new temperature regions silicon semiconductors will be substituted by WBG semiconductors. The present work shows an active power cycling capability of different wire and ribbon bonds and the failure mechanism will be discussed. A calculation model explained the reliability for the different wire diameter and the impact of bonding materials. This reliability calculation explain the thermo-mechanical effects and based on materials and geometry data and is not optimized for evidence. Through these physical background understanding more than 1.000.000 thermal cycles with a 150 K temperature swing from +30°C to +180°C are now possible. These is a the basic knowledge for a design for reliability based on current, mission profile and reliability optimization for future high end applications with wire or ribbon bonding technique.
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Zhao, Youyang, Charles Rinzler et Antoine Allanore. « Molten Semiconductors for High Temperature Thermoelectricity ». ECS Journal of Solid State Science and Technology 6, no 3 (5 décembre 2016) : N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.

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Chen, Sheng. « Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors ». Highlights in Science, Engineering and Technology 81 (26 janvier 2024) : 286–90. http://dx.doi.org/10.54097/26qm0041.

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Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitride based diluted magnetic semiconductors. This paper found that the theoretical prediction of gallium nitride based diluted magnetic semiconductors is generally believed to have good temperature conditions and advantages in thermal conductivity, electron mobility, breakdown voltage, and other aspects. The current experimental results also confirm that gallium nitride based diluted magnetic semiconductors can improve the limitations of semiconductors under room temperature conditions. This article believes that this semiconductor material has broad development potential in fields such as intelligent vehicles, aerospace, and cloud computing.
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Kappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner et Rainer Kokozinski. « High Temperature GaN Gate Driver in SOI CMOS Technology ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 janvier 2016) : 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.

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Abstract Power electronics is a rapidly developing application area for high temperature electronics. Wide bandgap semiconductors have intrinsic advantages for high temperature operation due to the large bandgap in comparison to silicon based semiconductors. Especially GaN is a promising material for power semiconductors due to the possibility to process GaN on silicon carrier wafers, which results in lower device costs in comparison to SiC. In addition GaN provides higher switching frequencies and lower on-resistances of power devices. In combination these advantages enable the design of high performing, small size power modules operating at elevated temperatures. However, in order to exploit all benefits from GaN technology, new approaches in driver design are necessary. In this work a GaN specific gate driver supporting increased switching frequency, low driver output resistance, and GaN specific control voltages is presented. The driver has been implemented in a 0.35 micron thin film SOI-CMOS technology allowing high temperature operation up to 250 °C. The driver output characteristic is digitally adjustable with configuration data stored in an on-chip non-volatile memory based on EEPROM.
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Tournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel et Dominique Planson. « Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications ». Advanced Materials Research 324 (août 2011) : 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.

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Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.
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Thèses sur le sujet "High temperature semiconductors"

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Skelland, Neil David. « High temperature ion implantation into insulators ». Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.

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Vanpeteghem, Carine B. « High-pressure high-temperature structural studies of binary semiconductors ». Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/11496.

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The last decade has seen a tremendous improvement in high-pressure diffraction techniques. Among other things, this has led to a completely new understanding of the structural systematics of the group IV, III-V and II-VI semiconductors. Many phases have been shown to have more complex, lower-symmetry, high-pressure structures than previously thought. One of the most surprising discoveries has been the non-existence of the diatomic b-tin structure, long believed to be one of the principal high-pressure phases of the III-V and II-VI systems. However, most of the work to date has been performed at room temperature and in fact, very little is yet known about the high-pressure phases of these systems above room temperature. The work presented in this thesis centres on the use of high temperature under pressure to investigate further the absence of the diatomic, site-ordered, b-tin or b-tin-like phases have been found but appear to be site-disordered. Additionally, the P-T phase diagrams of these systems are explored above room temperature. This work has required the development the existing high-pressure facilities on the SRS synchrotron source of Daresbury Laboratory to allow routine high-pressure high-temperature (hp/ht) experiments. These technical developments are described. High-temperature studies of GaSb under pressure reveal a new, previously unknown phase. A detailed study of the structural ordering in the hp/ht phases of GaSb is performed by combining two different experimental techniques. It is shown, by x-ray powder-diffraction, that all the hp and hp/ht phases of GaSb are site-disordered over about two unit cells or less. A complementary high-pressure EXAFS study demonstrates the absence of complete order over nearest-neighbour distances.
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Bloom, Scott Harris. « Superconducting and normal compounds : some high field/high pressure effects / ». Thesis, Connect to Dissertations & ; Theses @ Tufts University, 1989.

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Thesis (Ph.D.)--Tufts University, 1989.
Submitted to the Dept. of Physics. Includes bibliographical references (leaves 192-204). Access restricted to members of the Tufts University community. Also available via the World Wide Web;
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Nilsson, Joakim. « Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors ». Licentiate thesis, Luleå tekniska universitet, EISLAB, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18113.

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Because failures in power electronics can cause production stops and unnecessary damage to interconnected equipment, monitoring schemes that are able to predict such failures provide various economic and safety benefits. The primary motivation for this thesis is that such monitoring schemes can increase the reliability of energy production plants. Power semiconductors are crucial components in power electronics, and monitoring their temperatures yields information that can be used to predict incipient failures.This thesis presents a system concept for wireless, single-chip, high-temperature monitoring of power semiconductors. A wireless single-chip solution is both cost effective and easy to integrate with existing power semiconductor modules. However, the concept presents two major challenges: the implementation of wireless power and communication, and the low-power design of the temperature sensors. Thus, the feasibility of using on-chip coils to provide communication with and obtain power from an external reader coil is assessed, and a low-power, high-temperature bandgap temperature sensor is developed. The sensor is capable of operating in the high-temperature range, allowing it to be useful for detecting incipient faults, particularly solder faults, at up to 230 °C. This is achieved by compensating for leakage currents that arise in hot reverse-biased p-n junctions, which become significant at these high temperatures.A single-chip, on-chip coil solution provides the combined advantages of galvanic isolation from the power device and simplicity of integration in existing modules. However, as the use of a wireless design with a small on-chip coil will limit the amount of available power, it incurs the disadvantage of requiring a low-power design for the sensor. Initial experiments have been performed on a prototype on-chip coil to assess the feasibility of this concept and provide insight into the challenges of on-chip coil design.In this thesis, focus is placed on the challenge of how to handle large leakage currents in low-power integrated silicon circuits. At high temperatures, these leakage currents can approach or even surpass the level of the circuit's quiescent current. Earlier work on leakage current compensation techniques is examined, compared to and combined with a compensation technique designed to compensate for collector-base leakage in the main bipolar pair of a Brokaw bandgap reference. Experiments show that fully analogue sensors operating at up to 228 °C with an accuracy of 10 °C that consume only 8.2 µW are feasible. If a higher accuracy, such as 3 °C, is required, then a temperature range of up to 200 °C can be achieved with a power consumption of 2.3 µW.It is likely that the high temperature range and low power consumption of the sensors presented in this thesis, in combination with on-chip coils, will make them suitable for use in solder fault prediction in power semiconductor modules.
Godkänd; 2016; 20160304 (joanil); Nedanstående person kommer att hålla licentiatseminarium för avläggande av teknologie licentiatexamen. Namn: Joakim Nilsson Ämne: Industriell Elektronik/Industrial Electronics Uppsats: Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors Examinator: Docent Jonny Johansson, Institutionen för system- och rymdteknik, Avdelning: EISLAB, Luleå tekniska universitet. Diskutant: Docent Johan Sidén, Avdelningen för Elektronikkonstruktion, Mittuniversitetet, Sundsvall. Tid: Tisdag 3 maj, 2016 kl 8.30 Plats: A1547, Luleå tekniska universitet
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Puchkov, Anton V. « The doping dependence of the optical properties of high-temperature superconductors / ». *McMaster only, 1996.

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Jansson, Rasmus. « Completion of the software required for a high-temperature DLTS setup ». Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.

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The main purpose of this thesis was to examine the communication problems with the DLTS set up in the Division for Electricity at Ångström Laboratory in Uppsala, Sweden, and to make the DLTS software complete. The set up consisted of a C/V meter, a pulse generator, a temperature controller and a PC with a control program written in LabVIEW. It was found that the software had been constructed to fit another set of instruments than the set up currently used at Ångström Laboratory. The task was therefore to properly integrate the correct control commands of those instruments into the software.
DLTS investigation of wide bandgap materials
Diamond electronics
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Barclay, Joshua David. « High Temperature Water as an Etch and Clean for SiO2 and Si3N4 ». Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.

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An environmentally friendly, and contamination free process for etching and cleaning semiconductors is critical to future of the IC industry. Under the right conditions, water has the ability to meet these requirements. Water becomes more reactive as a function of temperature in part because the number of hydronium and hydroxyl ions increase. As water approaches its boiling point, the concentration of these species increases over seven times their concentrations at room temperature. At 150 °C, when the liquid state is maintained, these concentrations increase 15 times over room temperature. Due to its enhanced reactivity, high temperature water (HTW) has been studied as an etch and clean of thermally grown SiO2, Si3N4, and low-k films. High temperature deuterium oxide (HT-D2O) behaves similarly to HTW; however, it dissociates an order of magnitude less than HTW resulting in an equivalent reduction in reactive species. This allowed for the effects of reactive specie concentration on etch rate to be studied, providing valuable insight into how HTW compares to other high temperature wet etching processes such as hot phosphoric acid (HPA). Characterization was conducted using Fourier transform infrared spectroscopy (FTIR) to determine chemical changes due to etching, spectroscopic ellipsometry to determine film thickness, profilometry to measure thickness change across the samples, scanning electron microscopy (SEM), contact angle to measure changes in wetting behavior, and UV-Vis spectroscopy to measure dissolved silica in post etch water. HTW has demonstrated the ability to effective etch both SiO2 and Si3N4, HT-D2O also showed similar etch rates of Si3N4 indicating that a threshold reactive specie concentration is needed to maximize etch rate at a given temperature and additional reactive species do not further increase the etch rate. Because HTW has no hazardous byproducts, high temperature water could become a more environmentally friendly etchant of SiO2 and Si3N4 thin films.
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Khan-Cheema, Umar Manzoor. « Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields ». Thesis, University of Oxford, 1996. http://ora.ox.ac.uk/objects/uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b.

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The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the In As and a confined quasi two dimensional hole gas (2DHG) in the GaSb. This is the first detailed study into vertical transport in an n-InAs/p-GaSb single heterojunction (SHET). Application of a forward bias (InAs negative with respect to GaSb) increases the 2DEG and 2DHG concentrations and, therefore, their confinement energies. Eventually a critical bias is reached where the electron confinement energy moves above the hole confinement energy (the theoretical voltage induced semimetallsemiconductor transition Vc). Any subsequent increase in voltage is expected to result in a current decrease, and a region of negative differential resistance (NDR) should occur. The SHET can be grown with two distinct interface types, 'InSb-like' and 'GaAslike'. This study shows for the first time that the SHET vertical transport characteristic is very dependent upon this interface monolayer. For example, the temperature dependence of the I/V trace in a SHET with a 'GaAs-like' interface is found to be weak, with similar current peak to valley ratios (PVR) at 300 and 77K. The 'InSblike' SHET, however has a PVR that is very close to 1 at 300K, rising above 2 at 77K. Hydrostatic pressure is used to alter reversibly the InAs conduction/GaSb valence band overlap Δ. Vertical transport measurements taken at pressure confirm that Δ reduces at the same rate for both interface types and that it is larger for the 'InSb-like' interface. Experimental I/V traces at various pressures are compared with the corresponding results from self-consistent band profile calculations. The subsequent discoveries are that NDR occurs after Vc for both interfaces, and that each interface supports a different conduction mechanism - with the 'GaAs-like' interface exhibiting NDR when the band overlap is calculated to be ~ -100 meV. Magnetic fields have been applied both perpendicular and parallel to the SHET interface. The perpendicular field results provide additional evidence that the conduction process must be different at both interfaces and that NDR occurs after Vc. Parallel field I/V traces reveal an entirely different response for the two interface types.
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Colmenares, Juan. « Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics ». Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.

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Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

QC 20160922

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Haskel, Daniel. « Local structural studies of oriented high temperature superconducting cuprates by polarized XAFS spectroscopy / ». Thesis, Connect to this title online ; UW restricted, 1998. http://hdl.handle.net/1773/9712.

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Livres sur le sujet "High temperature semiconductors"

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M, Willander, et Hartnagel Hans 1934-, dir. High temperature electronics. London : Chapman & Hall, 1997.

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National Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., dir. Materials for high-temperature semiconductor devices. Washington, D.C : National Academy Press, 1995.

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Bakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA : Kluwer Academic Publishers, 2000.

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Christou, A. Reliability of high temperature electronics. College Park, Md : Center for Reliability Engineering, University of Maryland, 1996.

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Bakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA : Springer US, 2000.

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universitet, Uppsala, dir. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala : Acta Universitatis Upsaliensis, 1997.

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Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz : Hartung-Gorre, 2007.

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Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz : Hartung-Gorre, 2007.

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L, Shindé Subhash, et Rudman David Albert, dir. Interfaces in high-Tc superconducting systems. New York : Springer-Verlag, 1994.

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Longya, Xu, Zhu Lu et United States. National Aeronautics and Space Administration., dir. A thermal and electrical analysis of power semiconductor devices : Research report. [Washington, DC : National Aeronautics and Space Administration, 1997.

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Chapitres de livres sur le sujet "High temperature semiconductors"

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Hartnagel, H. L. « High temperature electronics based on compound semiconductors ». Dans High Temperature Electronics, 161–72. Boston, MA : Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_6.

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Ezaki, T., N. Mori, H. Momose, K. Taniguchi et C. Hamaguchi. « Electron Transport in Quantum Wires at High Temperature ». Dans Hot Carriers in Semiconductors, 243–46. Boston, MA : Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_56.

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Hultquist, Gunnar, C. Anghel et P. Szakàlos. « Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors ». Dans High-Temperature Oxidation and Corrosion 2005, 139–46. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-409-x.139.

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Ohta, Hiromichi, S. Ohta et K. Koumoto. « High-Temperature Thermoelectric Performance of Strontium Titanate Degenerate Semiconductors ». Dans Ceramic Transactions Series, 343–48. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch33.

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Fukumura, Tomoteru, et Masashi Kawasaki. « Magnetic Oxide Semiconductors : On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds ». Dans Functional Metal Oxides, 89–131. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

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Bak-Misiuk, J., A. Misiuk, J. Adamczewska, M. Calamiotou, A. Kozanecki, D. Kuristyn, K. Reginski, J. Kaniewski et A. Georgakilas. « Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates ». Dans Atomistic Aspects of Epitaxial Growth, 467–75. Dordrecht : Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_36.

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Rötger, T., G. J. C. L. Bruls, J. C. Maan, P. Wyder, K. Ploog et G. Weimann. « Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions ». Dans High Magnetic Fields in Semiconductor Physics II, 215–19. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_35.

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Dammann, M., T. Stockmeier et H. Baltes. « Minority carrier lifetime measurements after high temperature pre-treatment ». Dans Crucial Issues in Semiconductor Materials and Processing Technologies, 299–304. Dordrecht : Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_29.

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Gimenez, Salvador Pinillos, et Egon Henrique Salerno Galembeck. « The Electrical Characteristics of the Semiconductor at High Temperatures ». Dans Differentiated Layout Styles for MOSFETs, 27–39. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29086-2_3.

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Willett, R. L., H. L. Stormer, D. C. Tsui, L. N. Pfeiffer et K. W. West. « Temperature Dependence of Transport Coefficients of 2D Electron Systems at Very Small Filling Factors ». Dans High Magnetic Fields in Semiconductor Physics II, 153–56. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_25.

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Actes de conférences sur le sujet "High temperature semiconductors"

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Ikossi-Anastasiou, Kiki, Andris Ezis, Keith Evans et Charles E. Stutz. « Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor ». Dans Semiconductors '92, sous la direction de John E. Bowers et Umesh K. Mishra. SPIE, 1992. http://dx.doi.org/10.1117/12.137715.

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Khokhlov, Dmitry. « Mixed Valence Puzzle in Doped IV-VI Semiconductors and its Applied Output : High-Performance Terahertz Photodetectors ». Dans LOW TEMPERATURE PHYSICS : 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355325.

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Friedrich, A. « Very High Temperature Operation of ∼ 5.75 μm Quantum Cascade Lasers ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994716.

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Kolodzey, James. « High Power, High Temperature Terahertz Emitters Based on Electronic Processes in Semiconductors ». Dans International Conference on Fibre Optics and Photonics. Washington, D.C. : OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.2.

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Barker, John R. « Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994680.

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Voevodin, Valerii G., et Olga V. Voevodina. « Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors ». Dans Material Science and Material Properties for Infrared Optoelectronics, sous la direction de Fiodor F. Sizov et Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280457.

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Takahashi, Ryo. « Switching in low-temperature-grown InGaAs MQWs ». Dans Nonlinear Guided Waves and Their Applications. Washington, D.C. : Optica Publishing Group, 1998. http://dx.doi.org/10.1364/nlgw.1998.nthb.1.

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Résumé :
Optical communication systems capable of operating at ultrafast speeds and transmitting massive volumes of data will comprise the pillars that support the multimedia society of the future. To achieve such systems, it will be necessary to increase the speed of optical demultiplexers, optical repeaters, and other optical control devices making up today' selectronic circuits. A key device in such systems will be the ultrafast all-optical switch. Over the years, research institutes around the world have been conducting research aimed at achieving such switches through the use of semiconductors, optical fibers, and various other materials. Semiconductors are the most promising materials because they offer the possibility of achieving devices with superior practical aspects, including compact size. One drawback of semiconductor-based optical switches, however, has been the difficulty in achieving both high-speed photoresponse and a high on/off ratio.
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Gilbertson, Adam, C. J. Lambert, S. A. Solin et L. F. Cohen. « High resolution InSb quantum well ballistic nanosensors for room temperature applications ». Dans THE PHYSICS OF SEMICONDUCTORS : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848310.

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Lebey, Thierry, Ichiro Omura, Masahiro Kozako, Hiroki Kawano et Masayuki Hikita. « High temperature high voltage packaging of wideband gap semiconductors using gas insulating medium ». Dans 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5543854.

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Sapozhnikov, Sergey Z., Vladimir Yu Mityakov, Andrey V. Mityakov, Andrey A. Snarskii et Maxim I. Zhenirovskyy. « High-Temperature Heat Transfer Investigations Using Heterogeneous Gradient Sensors ». Dans 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22527.

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The local heat flux measurements are limited by low working temperature of the gradient heat flux sensors (GHFS) [1–3]. The novel heterogeneous sensors (HGHFS) made from metal-metal or metal-semiconductor layered composites (so-called anisotropic thermoelements) have high temperature level of 1300 K and more. Theory of the HGHFS allows to choose thickness and angle of inclination for the layers of composite, and to forecast volt-watt sensitivity. The sensitivity of metal-metal sensors is typically on the order of 0.02 to 0.5 mV/W, and it is much beyond when semiconductors are used. HGHFS are used for a first time for heat flux measurements in the furnace of the industrial boiler which is in operating of the Thermal Power Plant (fossil fuel power plant) in the city of Kirov (Russia). The local heat flux at the surface of refractory-faced water wall is measured in different regimes of operating. It is also shown that HGHFS may be used as indicator of furnace slugging. Small sizes (minimally 2×2×0.1 mm) and high working temperature of the HGHFS are useful for heat transfer investigations.
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Rapports d'organisations sur le sujet "High temperature semiconductors"

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Siskaninetz, William J., Hank D. Jackson, James E. Ehret, Jeffrey C. Wiemeri et John P. Loehr. High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers. Fort Belvoir, VA : Defense Technical Information Center, novembre 2000. http://dx.doi.org/10.21236/ada398284.

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Nordheden, Karen J., et Linda J. Olafsen. High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures. Fort Belvoir, VA : Defense Technical Information Center, mai 2009. http://dx.doi.org/10.21236/ada501427.

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Park, Gil Han, et Jin-Joo Song. BMDO-AASERT : Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA : Defense Technical Information Center, décembre 2001. http://dx.doi.org/10.21236/ada397734.

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Ruddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & ; Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), juin 2005. http://dx.doi.org/10.2172/884848.

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Ruddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & ; Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), juin 2005. http://dx.doi.org/10.2172/884856.

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Ruddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & ; Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), juin 2005. http://dx.doi.org/10.2172/884866.

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Ruddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & ; Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), juin 2005. http://dx.doi.org/10.2172/885081.

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Ruddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & ; Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), juin 2005. http://dx.doi.org/10.2172/885414.

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