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1

Hennings, D. F. K., B. Schreinemacher et H. Schreinemacher. « High-permittivity dielectric ceramics with high endurance ». Journal of the European Ceramic Society 13, no 1 (janvier 1994) : 81–88. http://dx.doi.org/10.1016/0955-2219(94)90062-0.

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Xiong, Zhao Xian, M. Y. Zhou, Hao Xue, Hong Qiu et F. Xiao. « Characterization of Microwave Ceramics with Low Permittivity and High Quality Factors ». Key Engineering Materials 434-435 (mars 2010) : 244–46. http://dx.doi.org/10.4028/www.scientific.net/kem.434-435.244.

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A new type of porous ceramics, Mg2SiO4, for microwave application with low permittivity and high quality factors were prepared via gel-casting processing in this paper. Microstructure of the ceramics was observed and crystal structure of the samples was also identified. Moreover, emphasis was paid on the characterization of the microwave ceramics. Dielectric properties of the ceramics were measured by an automatic system of microwave measurement, resulting in dielectric constant of 3.51 and quality factor of 11,774 for the ceramic sample at frequency about 10GHz. Mechanical performance of the samples were also evaluated with maximal bending strength of 140MPa.
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3

KOLAR, D., et D. SUVOROV. « ChemInform Abstract : High Permittivity Microwave Ceramics ». ChemInform 27, no 10 (12 août 2010) : no. http://dx.doi.org/10.1002/chin.199610337.

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4

Szwagierczak, Dorota, Beata Synkiewicz-Musialska, Jan Kulawik et Norbert Pałka. « Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications ». Materials 14, no 14 (18 juillet 2021) : 4017. http://dx.doi.org/10.3390/ma14144017.

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New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.
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Xiong, Zhao Xian, X. Xue, Hong Qiu, C. Zhang, C. Fang, J. Luo, D. Y. Bao et al. « Microwave Dielectric Ceramics and Devices for Wireless Technologies ». Key Engineering Materials 368-372 (février 2008) : 154–58. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.154.

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In this paper, several kinds of synthesis techniques were adopted; not only conventional solidstate reaction method but also solution synthesis techniques, including co-precipitation and hydrothermal synthesis, in addition to the gel-casting for complex shape of ceramic components and tape-casting of large scale thin plate for microwave IC. Different kinds of microwave ceramics were prepared, such as materials with low permittivity and high quality factor, moderate permittivity and good quality factor, and, high permittivity and reasonable quality factor, in addition to near zero of temperature coefficient of resonance frequency. Series of microwave devices were developed, for examples, dielectric resonators, dielectric filters, GPS antennas, communication connectors, and thin substrates for microwave IC.
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Lu, Huafei, Yuanhua Lin, Jiancong Yuan, Cewen Nan et Kexin Chen. « Dielectric and varistor properties of rare-earth-doped ZnO and CaCu3Ti4O12 composite ceramics ». Journal of Advanced Dielectrics 03, no 01 (janvier 2013) : 1350001. http://dx.doi.org/10.1142/s2010135x1350001x.

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To investigate the multi-functional ceramics with both high permittivity and large nonlinear coefficient, we have prepared rare-earth Tb -and- Co doped ZnO and TiO 2-rich CaCu3Ti4O12 (TCCTO) powders by chemical co-precipitation and sol–gel methods respectively, and then obtained the TCCTO/ ZnO composite ceramics, sintered at 1100°C for 3 h in air. Analyzing the composite ceramics of the microstructure and phase composition indicated that the composite ceramics were composed of the main phases of ZnO and CaCu3Ti4O12 (CCTO). Our results revealed that the TCCTO/ ZnO composite ceramics showed both high dielectric and good nonlinear electrical behaviors. The composite ceramic of TCCTO: ZnO = 0.3 exhibited a high dielectric constant of ~210(1 kHz) with a nonlinear coefficient of ~11. The dielectric behavior of TCCTO/ ZnO composite could be explained by the mixture rule. With the high dielectric permittivity and tunable varistor behaviors, the composite ceramics has a potential application for the higher voltage transportation devices.
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Chen, K., S. K. Yuan, P. L. Li, F. Gao, J. Liu, G. L. Li, A. G. Zhao, X. M. Lu, J. M. Liu et J. S. Zhu. « High permittivity in Zr doped NiO ceramics ». Journal of Applied Physics 102, no 3 (août 2007) : 034103. http://dx.doi.org/10.1063/1.2764217.

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Shi, Yongjie, Wentao Hao, Hui Wu, Li Sun, Ensi Cao, Yongjia Zhang et Hua Peng. « High dielectric-permittivity properties of NaCu3Ti3Sb0.5Nb0.5O12 ceramics ». Ceramics International 42, no 1 (janvier 2016) : 116–21. http://dx.doi.org/10.1016/j.ceramint.2015.08.009.

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Peng, Zhen, Hong Wang et Xi Yao. « Dielectric resonator antennas using high permittivity ceramics ». Ceramics International 30, no 7 (janvier 2004) : 1211–14. http://dx.doi.org/10.1016/j.ceramint.2003.12.079.

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Qin, Qun, Tian Guo Wang et Wen Jun Zhang. « Effect of Er2O3 on the Microstructure and Electrical Properties of WO3 Capacitor-Varistor Ceramics ». Advanced Materials Research 233-235 (mai 2011) : 2503–6. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2503.

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WO3-based capacitor-varistor ceramics doped with Er2O3 were prepared and the microstructures and nonlinear electrical properties were investigated. The results show that there exist second phase Er10W2O21 on the surface of WO3 grains. Doping Er2O3 in WO3 ceramic can inhibit the grain growth. A small quantity of Er2O3 can significantly improve nonlinear properties of the samples. The permittivity of doped samples was higher than that of the undoped, and the high permittivity makes Er2O3-doped WO3 ceramics be applicable as a kind of capacitor-varistor materials.
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11

Puli, Venkata Sreenivas, Shiva Adireddy, Manish Kothakonda, Ravinder Elupula et Douglas B. Chrisey. « Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors ». Journal of Advanced Dielectrics 07, no 03 (juin 2017) : 1750017. http://dx.doi.org/10.1142/s2010135x17500175.

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This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O[Formula: see text] (as CCTO) ceramic powders prepared by a sol–gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell–Wagner (MW) polarization mechanism.
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12

Tsurumi, T., Y. Yamamoto, H. Kakemoto, S. Wada, H. Chazono et H. Kishi. « Dielectric properties of BaTiO3–BaZrO3 ceramics under a high electric field ». Journal of Materials Research 17, no 4 (avril 2002) : 755–59. http://dx.doi.org/10.1557/jmr.2002.0110.

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Multilayered ceramic capacitors (MLCCs) with BaTiO3–BaZrO3 (BTZ) dielectric layers were fabricated, and the dielectric permittivity of the BTZ layers with different thicknesses in MLCCs was measured. The dielectric permittivity of the BTZ ceramic disk was also measured under various ac electric fields. The variation in the dielectric behaviors with the thickness of BTZ layers in MLCCs was explained by the ac-field dependence of dielectric permittivity observed in the BTZ ceramic disk. The ac-field dependence of dielectric permittivity of BTZ was markedly observed below the temperature of a broad maximum in the dielectric permittivity versus temperature (є versus T) curve. It was found that the temperature of the broad maximum shifted to the low-temperature side and the peak shape became asymmetric with increasing ac field. These changes in the dielectric properties under high ac fields were explained by a model of relaxors with the concept of the formation of polar microregions (PMRs) and the freezing of fluctuating ipoles in PMRs.
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13

Wang, Xu Ai, Run Hua Fan, Zhi Cheng Shi, Min Chen, Ke Lan Yan, Kai Sun, Qing Hou, Zi Dong Zhang et Lei Qian. « Tunable Electromagnetic Properties of Yttrium Iron Garnet Ceramics ». Materials Science Forum 816 (avril 2015) : 113–17. http://dx.doi.org/10.4028/www.scientific.net/msf.816.113.

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Different porosity Y3Fe5O12(YIG) ceramics (32% - 62%) were prepared from ceramic powders, which was synthesised by high temperature solid-phase reactions, and the effects of porosity on their electromagnetic properties were investigated. XRD and SEM were used to analyze the phase composition and microstructure of the porous composites. Electromagnetism properties including alternate current conductivity, permittivity and permeability of the composites were tested by HP4991 impedance analyzer (10 MHz~1 GHz). The results indicated that, the porosity and pore diameter were increasing with the addition of pore former by pressureless sintering; the real permeability and permittivity of YIG ceramic decreased when the porosity increasing, at the same time, the peaks of magnetic loss were moved to high frequency. That is to say, the electromagnetism properties of YIG ceramic composites could be adjusted by its porosity. Yttrium iron garnet ceramic can be widely used for high frequency devices due to its excellent and tunable magnetic properties.
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14

Szwagierczak, Dorota. « Dielectric properties of high-permittivity A2/3CuTa4O12 ceramics ». Microelectronics International 31, no 3 (4 août 2014) : 137–42. http://dx.doi.org/10.1108/mi-10-2013-0056.

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Purpose – This paper aims to present the comparative study on the composition, microstructure and dielectric behavior of a group of new nonferroelectric high-permittivity A2/3CuTa4O12 (A = Y, Nd, Sm, Gd, Dy or Bi) ceramics. Design/methodology/approach – The materials under investigation were synthesized by solid-state reaction method and sintered at 1,120-1,230°C. Dielectric properties were investigated in the temperature range from −55 to 740°C at frequencies 10 Hz to 2 MHz. Microstructure, elemental composition and phase composition of the ceramics were examined by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) methods. DC conductivity was studied in the temperature range 20-740°C. Findings – XRD analysis revealed peaks corresponding to Cu2Ta4O12 along with small amounts of secondary phases based on tantalum oxides. Impedance spectroscopic data and the results of SEM and EDS studies imply the spontaneous formation of internal barrier layer capacitors in the investigated materials. Two steps can be distinguished in the dielectric permittivity versus frequency plots. The low-frequency step of 1,000-100,000 is assigned to grain boundary barrier layer effect, while the high-frequency one of 34-46 is related to intrinsic properties of grains. Originality/value – Search for new high-permittivity capacitor materials is important for the progress in miniaturization and integration scale of electronic passive components. The paper reports on processing, microstructure, microanalysis studies and dielectric properties of a group of novel nonferroelectric materials with the perovskite structure of CaCu3Ti4O12 and the general formula A2/3CuTa4O12, being spontaneously formed internal barrier layer capacitors.
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15

Lin, Yuanhua, Rongjuan Zhao, Jianfei Wang, Jingnan Cai, Ce-Wen Nan, Yutian Wang et Long Wei. « Polarization of High-Permittivity Dielectric NiO-Based Ceramics ». Journal of the American Ceramic Society 88, no 7 (juillet 2005) : 1808–11. http://dx.doi.org/10.1111/j.1551-2916.2005.00361.x.

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16

Petzelt, Jan. « Dielectric Grain-Size Effect in High-Permittivity Ceramics ». Ferroelectrics 400, no 1 (21 septembre 2010) : 117–34. http://dx.doi.org/10.1080/00150193.2010.505511.

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17

Lin, Yuanhua, Jianfei Wang, Lei Jiang, Yu Chen et Ce-Wen Nan. « High permittivity Li and Al doped NiO ceramics ». Applied Physics Letters 85, no 23 (6 décembre 2004) : 5664–66. http://dx.doi.org/10.1063/1.1827937.

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18

Huang, Cheng-Liang, Shin-Tung Tasi et Yuan-Bin Chen. « Band-pass filters using high-permittivity ceramics substrate ». Microwave and Optical Technology Letters 52, no 10 (14 juillet 2010) : 2344–47. http://dx.doi.org/10.1002/mop.25439.

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19

Ahmad, Mohamad M., Adil Alshoaibi, Sajid Ali Ansari, Tarek S. Kayed, Hassan A. Khater et Hicham Mahfoz Kotb. « Dielectric Properties of Bi2/3Cu3Ti4O12 Ceramics Prepared by Mechanical Ball Milling and Low Temperature Conventional Sintering ». Materials 15, no 9 (27 avril 2022) : 3173. http://dx.doi.org/10.3390/ma15093173.

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In the current study, Bi2/3Cu3Ti4O12 (BCTO) ceramics were prepared by mechanical ball mill of the elemental oxides followed by conventional sintering of the powder without any pre-sintering heat treatments. The sintering temperature was in the range 950–990 °C, which is 100–150 °C lower than the previous conventional sintering studies on BCTO ceramics. All the ceramic samples showed body-centered cubic phase and grain size ≈ 2–6 μm. Sintering temperature in the range 950–975 °C resulted in comparatively lower dielectric loss and lower thermal coefficient of permittivity in the temperature range from −50 to 120 °C. All the BCTO ceramics showed reasonably high relative permittivity. The behavior of BCTO ceramics was correlated with the change in oxygen content in the samples with sintering temperature. This interpretation was supported by the measurements of the energy dispersive x-ray spectroscopy (EDS) elemental analysis and activation energy for conduction and for relaxation in the ceramics.
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Li, Xuhai, Liang Xu, Lixin Liu, Yuan Wang, Xiuxia Cao, Yuanjie Huang, Chuanmin Meng et Zhigang Wang. « High pressure treated ZnO ceramics towards giant dielectric constants ». J. Mater. Chem. A 2, no 39 (2014) : 16740–45. http://dx.doi.org/10.1039/c4ta03434a.

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Chen, Xiuli, Xiaoxia Li, Guisheng Huang, Gaofeng Liu, Xiao Yan et Huanfu Zhou. « Giant permittivity and good thermal stability of LiCuNb3O9-Bi(Mg0.5Zr0.5)O3 solid solutions ». Journal of Advanced Dielectrics 08, no 02 (avril 2018) : 1850012. http://dx.doi.org/10.1142/s2010135x18500121.

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([Formula: see text])LiCuNb3O9-[Formula: see text]Bi(Mg[Formula: see text]Zr[Formula: see text])O3 ceramics (([Formula: see text])LCN-[Formula: see text]BMZ) with [Formula: see text] were synthesized by a solid-state reaction method. The phase structure of ([Formula: see text])LCN-[Formula: see text]BMZ ceramics was characterized by X-ray diffraction (XRD), which revealed that the ceramics were distorted cubic perovskite structures. Apparent giant permittivity of [Formula: see text]–[Formula: see text] at 100[Formula: see text]kHz over the measured temperature range (25[Formula: see text]C–250[Formula: see text]C) was observed in the sintered ([Formula: see text])LCN-[Formula: see text]BMZ ([Formula: see text]) ceramics. Especially for the sample of [Formula: see text]0.04, the temperature stability of permittivity was markedly increased ([Formula: see text]/[Formula: see text]%), and high relative permittivity ([Formula: see text]) were obtained over a wide temperature range from 100[Formula: see text]C to 250[Formula: see text]C at 100[Formula: see text]kHz, which indicates that this ceramic is a promising dielectric material for elevated temperature dielectrics. The giant dielectric property of ([Formula: see text])LCN-[Formula: see text]BMZ ceramics are profoundly concerned with the Maxwell–Wagner effect.
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Zhang, Lulu, Bin Cui, Rong Ma, Leilei Li, Yan Wang, Wenqing Yan et Zhuguo Chang. « High permittivity of Ba(Ti1-xZrx)O3-based Y5V-type nanopowders and ceramics synthesized using a one-step sol–gel method ». Journal of Advanced Dielectrics 03, no 04 (octobre 2013) : 1350018. http://dx.doi.org/10.1142/s2010135x13500185.

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We synthesized Ba ( Ti 1-x Zr x) O 3-based (BTZ) nanopowders modified with Cu and Nb , and sintered ceramics using a one-step sol–gel process. Characterization using TG-DTG, XRD, SEM, and TEM analysis methods revealed that the powders formed at a nanometer scale. The process was controlled by the composition and calcining temperature. BaZrO 3 formed earlier than BaTiO 3 during the calcining, then a Ba ( Ti 1-x Zr x) O 3 solid solution formed incompletely, resulting in ceramics with huge permittivity and good temperature stability. Moreover, the maximum dielectric constant (εmax) first increased and then decreased as the Curie temperature (Tc) shifted to a lower temperature. When the Zr concentration was 5.4 mol%, εmax was greater than 24,000 and the dielectric loss (25°C) was only 0.005; this meets the Electronic Industries Alliance Y 5 V specifications. These nanopowders would permit a significant reduction in the thickness of multilayer ceramic capacitors and the huge permittivity of the ceramics will help meet the current demand for device miniaturization in the electronics industry.
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Hoshina, Takuya, Mikio Yamazaki, Hiroaki Takeda et Takaaki Tsurumi. « Dielectric Breakdown Mechanism of Perovskite-Structured Ceramics ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, CICMT (1 septembre 2015) : 000116–20. http://dx.doi.org/10.4071/cicmt-tp43.

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We precisely measured the dielectric breakdown strength of SrTiO3, CaTiO3, and CaZrO3 ceramics as a function of temperature, and revealed the dielectric breakdown mechanism of the ceramics. For the dielectric breakdown test, ceramics specimens with a lot of round-bottom holes were prepared. Using the specimens, the breakdown positions were stabilized and a reliability of breakdown strength was improved as well as the measurement efficiency. As a result of the dielectric breakdown tests, it was found that the dielectric breakdown strength decreased with increasing permittivity at room temperature and the permittivity dependence of breakdown strength obeyed Griffith type energy release rate model. At high temperature above 100ºC, the dielectric breakdown mechanism of SrTiO3 and CaTiO3 ceramics was explained by an intrinsic breakdown model. In contrast, an intrinsic dielectric breakdown of CaZrO3 ceramics didn't occur in the measurement temperature range up to 210ºC. To obtain a high dielectric breakdown strength at high temperature, the dielectric permittivity is required to be low to some extent and the defect concentration of oxygen vacancies should be minimized in the perovskite-structured oxide.
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Ismail, Mukhlis M. « Ferroelectric characteristics of Fe/Nb co-doped BaTiO3 ». Modern Physics Letters B 33, no 22 (7 août 2019) : 1950261. http://dx.doi.org/10.1142/s0217984919502610.

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[Formula: see text] ceramics ([Formula: see text] mol.%, [Formula: see text]:[Formula: see text] = 1:3, 2:3, 3:2, 3:1) were successfully prepared using the traditional solid-phase sintering method. The effects of the proportion doping (Fe/Nb) components on various properties of BaTiO3 ceramics were studied. The X-ray diffraction showed that all solid solutions have the single cubic phase at room temperature, and that dielectric permittivity exhibits a maximum, Curie’s temperature at the peak. The ceramics have obvious peak shift effect: Curie’s temperature shifts to low temperature as Fe/Nb ratio increases. The high Fe/Nb ratio BaTiO3 ceramic showed also an enhancement of the broadening effect for dielectric constant curve with respect to temperature, and dielectric permittivity peak reflected phase transition from rhombohedral to tetragonal polar-nano regions. Dielectric and ferroelectric properties of Fe/Nb co-doped BaTiO3 ceramics have obvious enhanced ferroelectric properties and have slender hysteresis loop beneficial for energy storage materials.
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Greicius, Simonas, Juras Banys et Izabela Szafraniak-Wiza. « Dielectric investigations of BiFeO3 ceramics ». Processing and Application of Ceramics 3, no 1-2 (2009) : 85–87. http://dx.doi.org/10.2298/pac0902085g.

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In this paper we present the results from the investigation of the dielectric permittivity of BiFeO3 ceramics, prepared by mechanochemical synthesis method in a broad frequency and temperature range. The dielectric permittivity is mainly caused by high conductivity, which is suppressed in the frequencies above 1 MHz. The investigated ceramics showed conductivity activation energy E/k = 11280?12 K, and ?0 = 54161?800 S. The plots of M*revealed conductivity mechanism with ?0 = 1.12?10-13s, and E/k = 9245 K. .
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Peng, Zhanhui, Jitong Wang, Fudong Zhang, Shudong Xu, Xiaoping Lei, Pengfei Liang, Lingling Wei, Di Wu, Xiaolian Chao et Zupei Yang. « High energy storage and colossal permittivity CdCu3Ti4O12 oxide ceramics ». Ceramics International 48, no 3 (février 2022) : 4255–60. http://dx.doi.org/10.1016/j.ceramint.2021.10.217.

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Petzelt, J., et I. Rychetský. « Effective Dielectric Function in High-Permittivity Ceramics and Films ». Ferroelectrics 316, no 1 (juillet 2005) : 89–95. http://dx.doi.org/10.1080/00150190590963183.

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Bhaskar Reddy, S., M. S. Ramachandra Rao et K. Prasad Rao. « Observation of high permittivity in Ho substituted BaZr0.1Ti0.9O3 ceramics ». Applied Physics Letters 91, no 2 (9 juillet 2007) : 022917. http://dx.doi.org/10.1063/1.2755932.

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Dong, Ying, Hiroshi Kubo, Mitsuo Hano et Ikuo Awai. « A waveguide bandpass filter made of high-permittivity ceramics ». Electronics and Communications in Japan (Part II : Electronics) 77, no 1 (janvier 1994) : 46–56. http://dx.doi.org/10.1002/ecjb.4420770105.

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Huang, Cheng-Liang, Pau-Yeou Yen et Min-Hung Weng. « Planar SIR microwave bandpass filter using high-permittivity ceramics ». Microwave and Optical Technology Letters 26, no 6 (2000) : 410–13. http://dx.doi.org/10.1002/1098-2760(20000920)26:6<410 ::aid-mop19>3.0.co;2-y.

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Cheng, Xiao Fang, Xin Gui Tang, Shao Gong Ju, Yan Ping Jiang et Qiu Xiang Liu. « Dielectric Properties and Diffuse Phase Transition of Sol-Gel Derived 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 Ceramics ». Advanced Materials Research 311-313 (août 2011) : 1481–84. http://dx.doi.org/10.4028/www.scientific.net/amr.311-313.1481.

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The 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 (abbreviated to BNT-BT) powder and ceramic was synthesized by sol-gel process. The phase structure and dielectric properties of the ceramics were investigated. The ceramic was sintering at 1000-1100 degree C for 2-4 h in air atmosphere, and the X-ray diffraction (XRD) results revealed that the samples was pure perovskite-type phase. The Curite temperature of BNT-BT ceramics was high up to 348 degree C. The temperature dependence of dielectric permittivity and loss revealed there were two phase transitions, which were from ferroelectric (tetragonal) to anti-ferroelectric (rhombohedral) and anti-ferroelectric to paraelectric (cubic) in BNT-BT ceramics. Diffuse phase transitions were observed in BNT and BNT-BT ceramics and the Curie-Weiss Exponent (CWE) were nearly 2.
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32

Thomas, P., et K. B. R. Varma. « Effect of TeO2 addition on the dielectric properties of CaCu3Ti4O12 ceramics derived from the oxalate precursor route ». Journal of Advanced Dielectrics 03, no 04 (octobre 2013) : 1350028. http://dx.doi.org/10.1142/s2010135x13500288.

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CaCu 3 Ti 4 O 12 (CCTO) ceramics which has perovskite structure gained considerable attention due to its giant permittivity. But it has high tan δ (0.1 at 1 kHz) at room temperature, which needs to be minimized to the level of practical applications. Hence, TeO 2 which is a good glass former has been deliberately added to CCTO nanoceramic (derived from the oxalate precursor route) to explore the possibility of reducing the dielectric loss while maintaining the high permittivity. The structural, morphological and dielectric properties of the pure CCTO and TeO 2 added ceramics were studied using X-ray diffraction, Scanning Electron Microscope along with Energy Dispersive X-ray Analysis (EDX), spectroscopy and Impedance analyzer. For the 2.0 wt.% TeO 2 added ceramics, there is a remarkable difference in the microstructural features as compared to that of pure CCTO ceramics. This sample exhibited permittivity values as high as 7387 at 10 KHz and low dielectric loss value of 0.037 at 10 kHz, which can be exploited for the high frequency capacitors application.
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Feng, Yefeng, Jianxiong Zhang, Jianbing Hu, Cheng Peng et Renqi He. « Ultra-high polarity ceramics induced extrinsic high permittivity of polymers contributing to high permittivity of 2–2 series composites ». Materials Research Express 5, no 1 (18 janvier 2018) : 015311. http://dx.doi.org/10.1088/2053-1591/aaa4e6.

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Kigoshi, Yoichi, Saki Hatta, Takashi Teranishi, Takuya Hoshina, Hiroaki Takeda, Osamu Sakurai et Takaaki Tsurumi. « Dielectric Properties of Barium Titanate Ceramics with Nano-Sized Domain ». Key Engineering Materials 445 (juillet 2010) : 27–30. http://dx.doi.org/10.4028/www.scientific.net/kem.445.27.

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Barium titanate (BaTiO3) ceramics with various grain sizes from 0.7 to 13 μm on average were prepared by a conventional sintering method, a two-step sintering method and a rate controlled two-step sintering method. The permittivity of the ceramics was increased with decreasing grain size to 1.1 μm on average. However, the permittivity of the ceramics was decreased when the grain size was below 1 μm. The field emission scanning electron microscope (FE-SEM) observations revealed that the 90º domain width decreased with decreasing the grain size. By ultrawide range dielectric spectra from kHz to THz range of the BaTiO3 ceramics, the domain contribution to the permittivity was investigated. For the BaTiO3 ceramics with grain sizes over 1 μm, the dipole polarizability and the ionic polarizability were enhanced by high domain-wall density. In contrast, for the BaTiO3 ceramics with grain sizes below 1 μm, these polarizabilities were weakened.
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Albutt, Naphat, Suejit Pechprasarn, Pattaraporn Damkoengsuntorn et Thanapong Sareein. « The Giant Dielectric Constant of Y2NiMnO6 Ceramics for DC Bias ». Applied Mechanics and Materials 866 (juin 2017) : 277–81. http://dx.doi.org/10.4028/www.scientific.net/amm.866.277.

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In this work, the uses of giant dielectric constant of Y2NiMnO6 ceramics were investigated in the frequency range from 1 kHz to 3 MHz. The Y2NiMnO6 ceramics were sintered at 1400 °C for 6, 12, 18 and 24 hours, respectively. The dielectric properties of Y2NiMnO6 ceramics were examined in dc bias from 0 to 1.5 volt at room temperature. We found that all sintering times displayed high dielectric permittivity at frequencies below 105 Hz, above which the values decreased significantly, applied dc bias also reduced dielectric permittivity. The peak of dielectric loss decreased significantly at high dc bias due to decreased contribution of dc conductivity in grain ceramics. This research has characterised electrical properties of Y2NiMnO6 ceramics which maybe suitable for electronic components including batteries and capacitors.
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Bochenek, Dariusz, Przemysław Niemiec, Radosław Zachariasz et Ryszard Skulski. « Ferroelectric Properties and Internal Friction in Doped PZT Ceramics ». Key Engineering Materials 644 (mai 2015) : 171–74. http://dx.doi.org/10.4028/www.scientific.net/kem.644.171.

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Multicomponent PZT-type solid solution with composition: Pb0.975Ba0.01Ca0.01Sr0.005 (Zr0.52Ti0.48)O3+1.4wt.%Bi2O3+0.3wt.%GeO obtained by hot uniaxial pressing method is described in this paper. There are presented the results of studies of structural, dielectric and internal friction of obtained multicomponent PZT-type ceramics. It has been stated that the dielectric anomalies and internal friction anomalies are observed in similar temperature ranges. Obtained PZT-type ceramics have high value of the dielectric permittivity and low dielectric losses. The high temperature of phase transition and high value of electric permittivity allow considering this material as a base for low frequency and high temperature electromechanical transducers.
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Yan, Zhongna, Dou Zhang, Xuefan Zhou, He Qi, Hang Luo, Kechao Zhou, Isaac Abrahams et Haixue Yan. « Silver niobate based lead-free ceramics with high energy storage density ». Journal of Materials Chemistry A 7, no 17 (2019) : 10702–11. http://dx.doi.org/10.1039/c9ta00995g.

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Electrical field dependence of permittivity in (1 − x)AN-xBZN ceramics. Arrow directions down, up and down then up are related to domain switching, field induced transition and domain switching plus field induced transitions, respectively.
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ZHOU, DI, HONG WANG, QIU-PING WANG, XIN-GUANG WU, JING GUO, GAO-QUN ZHANG, LI SHUI et al. « MICROWAVE DIELECTRIC PROPERTIES AND RAMAN SPECTROSCOPY OF SCHEELITE SOLID SOLUTION [(Li0.5Bi0.5)1-xCax]MoO4 CERAMICS WITH ULTRA-LOW SINTERING TEMPERATURES ». Functional Materials Letters 03, no 04 (décembre 2010) : 253–57. http://dx.doi.org/10.1142/s1793604710001354.

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A Scheelite solid solution was formed based on [( Li0.5Bi0.5 )1-x Ca x] MoO 4 ceramics and prepared via a solid state reaction method in the range 0.0 ≤ x ≤ 1.0. High performance microwave dielectric properties were obtained in the [(Li0.5Bi0.5)0.15Ca0.85]MoO4 ceramic sintered at 760°C with a relative permittivity of 14.1, a Qf value of 24,000 GHz (at 10.0 GHz), and a temperature coefficient value of +10.7 ppm/°C and the [(Li0.5Bi0.5)0.1Ca0.9]MoO4 ceramic sintered at 850°C with a relative permittivity of 12.7, a Qf value of 41,300 GHz (at 10.3 GHz), and a temperature coefficient value of -16.5 ppm/°C. X-ray diffraction, Raman spectroscopy and the classical damped oscillator model were applied to study the relationship between the microwave dielectric properties and structures.
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Li, Yue Ming, Zong Yang Shen, Zhu Mei Wang, Hua Zhang, Yan Hong et Run Hua Liao. « Structure and Microwave Dielectric Properties of (Ca0.9375Sr0.0625)0.25 (Li0.5Sm0.5)0.75TiO3 Ceramics with B2O3-CuO Sintering Aids ». Advanced Materials Research 284-286 (juillet 2011) : 1442–46. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.1442.

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The B2O3-CuO oxide mixture (abbreviated as BC) was selected to lower the sintering temperature of (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 (abbreviated as CSLST) microwave dielectric ceramics by solid sate reaction technique. The effects of BC doping amounts on the crystal structure, microstructure and microwave dielectric properties of the ceramics were investigated. For the ceramic sample with the composition of CSLST + 5 wt% BC, its sintering temperature was reduced to 1000 °C as compared to 1200 °C for pure CSLST. In addition to the obtained good microwave dielectric properties as follows: εr = 80.4, Q×f = 1380 GHz, τf = -32.89 ×10-6/°C, this ceramic was a desirable high-permittivity microwave dielectric candidate for low-temperature cofired ceramic (LTCC) applications.
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Warren, William L., Duane Dimos et Rainer M. Waser. « Degradation Mechanisms in Ferroelectric and High-Permittivity Perovskites ». MRS Bulletin 21, no 7 (juillet 1996) : 40–45. http://dx.doi.org/10.1557/s0883769400035909.

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Due to the importance of ferroelectric and high-permittivity perovskite thin films for a wide range of applications, there has been extensive research devoted to understanding the mechanisms responsible for the degradation observed with time, temperature, and/or external field stress. The three most important degradation phenomena for ferroelectric materials such as Pb(Zr, Ti)O3 (PZT) and BaTiO3 are ferroelectric fatigue, ferro-electric aging, and resistance degradation. Ferroelectric fatigue is the loss of switchable polarization by repeated polarization reversals. Ferroelectric aging is characterized by a spontaneous change with time in the polarization-voltage (P-V) response. Resistance degradation is a deterioration of the insulating properties of a dielectric under direct-current (dc) bias and elevated temperature.These degradation processes ultimately limit the lifetime and reliability of devices that use ferroelectric and high-permittivity perovskite dielectrics. Fatigue and aging lead to reliability concerns for electronic (nonvolatile memories), piezo-electric, electro-optic, and pyroelectric applications. Likewise resistance degradation typically limits the lifetime of ceramic capacitors and high-dielectric constant thin films such as (Ba, Sr)TiO3, which is the principal candidate material for very high-density dynamic random-access memories (DRAMs).Because of the importance of these degradation processes, it is critical to understand them and to develop methods of eliminating or mitigating their effects. By combining results from studies on thin films with ones on ceramics and single crystals, a consistent picture of the mechanisms involved in these degradation processes is emerging. In this article, we discuss these degradation mechanisms with particular emphasis on the interaction between ferroelectric domains and charge trapping and the role of oxygen vacancies and associated defect dipoles.
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Yang, X., D. Li, Z. H. Ren, R. G. Zeng, S. Y. Gong, D. K. Zhou, H. Tian et al. « Colossal dielectric performance of pure barium titanate ceramics consolidated by spark plasma sintering ». RSC Advances 6, no 79 (2016) : 75422–29. http://dx.doi.org/10.1039/c6ra14741k.

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The pure BaTiO3 nanoceramics have a high permittivity up to 6 × 104 and a low dielectric loss. The polaron dipoles configured by oxygen vacancies and Ti3+ cations within grains could contribute to the colossal dielectric permittivity of the ceramics.
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42

Zeb, A., et S. J. Milne. « High temperature dielectric ceramics : a review of temperature-stable high-permittivity perovskites ». Journal of Materials Science : Materials in Electronics 26, no 12 (24 septembre 2015) : 9243–55. http://dx.doi.org/10.1007/s10854-015-3707-7.

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Hsiao, Yu-Jen, Yee-Shin Chang, Te-Hua Fang, Yin-Lai Chai, Chao-Yu Chung et Yen-Hwei Chang. « High dielectric permittivity of Li and Ta codoped NiO ceramics ». Journal of Physics D : Applied Physics 40, no 3 (19 janvier 2007) : 863–68. http://dx.doi.org/10.1088/0022-3727/40/3/026.

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Rangarajan, Badri, Beth Jones, Tom Shrout et Michael Lanagan. « Barium/Lead-Rich High Permittivity Glass?Ceramics for Capacitor Applications ». Journal of the American Ceramic Society 90, no 3 (mars 2007) : 784–88. http://dx.doi.org/10.1111/j.1551-2916.2006.01470.x.

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Yang, Zupei, Hongmei Ren, Xiaolian Chao et Pengfei Liang. « High permittivity and low dielectric loss of Na0.5Bi0.5−xLaxCu3Ti4O12 ceramics ». Materials Research Bulletin 47, no 5 (mai 2012) : 1273–77. http://dx.doi.org/10.1016/j.materresbull.2011.08.009.

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Morrison, Finlay D., Derek C. Sinclair, Janet M. S. Skakle et Anthony R. West. « Novel Doping Mechanism for Very-High-Permittivity Barium Titanate Ceramics ». Journal of the American Ceramic Society 81, no 7 (21 janvier 2005) : 1957–60. http://dx.doi.org/10.1111/j.1151-2916.1998.tb02575.x.

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Muhammad, Raz, Amir Khesro et Yaseen Iqbal. « Temperature-stable high relative permittivity in Ca-doped Ba0.5Bi0.5Ti0.75Mg0.25O3 ceramics ». Journal of Materials Science : Materials in Electronics 28, no 9 (24 janvier 2017) : 6763–68. http://dx.doi.org/10.1007/s10854-017-6372-1.

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Li, Ming, Antonio Feteira et Derek C. Sinclair. « Origin of the high permittivity in (La0.4Ba0.4Ca0.2)(Mn0.4Ti0.6)O3 ceramics ». Journal of Applied Physics 98, no 8 (15 octobre 2005) : 084101. http://dx.doi.org/10.1063/1.2089159.

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Wang, Wenbo, Lingxia Li, Te Lu, Ning Zhang et Weijia Luo. « Multifarious polarizations in high-performance colossal permittivity titanium dioxide ceramics ». Journal of Alloys and Compounds 806 (octobre 2019) : 89–98. http://dx.doi.org/10.1016/j.jallcom.2019.07.278.

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Hwang, Y., Y. P. Zhang et T. K. Lo. « Planar inverted-F antennas loaded with very high permittivity ceramics ». Radio Science 39, no 2 (2 mars 2004) : n/a. http://dx.doi.org/10.1029/2003rs002939.

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