Bibliographies thématiques / High frequency electronic devices

Littérature scientifique sur le sujet « High frequency electronic devices »

Auteur : Grafiati
Publié le 10 mars 2023

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Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « High frequency electronic devices ».

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Articles de revues sur le sujet "High frequency electronic devices"

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Trew, R. J. « High-Frequency Solid-State Electronic Devices ». IEEE Transactions on Electron Devices 52, no 5 (mai 2005) : 638–49. http://dx.doi.org/10.1109/ted.2005.845862.

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Zhao, Lan, et Wen Lei Zhao. « Frequency Characteristics and Conversion of Microwave Photons ». Applied Mechanics and Materials 568-570 (juin 2014) : 1303–6. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1303.

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The microwave frequency conversion technology, also known as mixers, RF and microwave system is the transmitter and the receiver have the basic functions. Microwave photon system, instead of the traditional high-speed optoelectronic devices electronic device to overcome the conventional signal processing electronics in the electronic bottleneck. In this paper, respectively, modulators and optical devices based on nonlinear effects of microwave photon frequency conversion methods are summarized, research and verify the bandpass filter can achieve frequency conversion scheme.
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Hasan, Md Nazmul, Edward Swinnich et Jung-Hun Seo. « Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics ». International Journal of High Speed Electronics and Systems 28, no 01n02 (mars 2019) : 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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SATO, TOSHIRO. « Micromagnetic Devices for High Frequency Power. » Journal of the Institute of Electrical Engineers of Japan 123, no 11 (2003) : 723–26. http://dx.doi.org/10.1541/ieejjournal.123.723.

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Rahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee et Siddharth Rajan. « High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices ». ECS Meeting Abstracts MA2022-02, no 32 (9 octobre 2022) : 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.

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In this presentation, we will review recent work on the integration of high permittivity dielectrics with wide and and ultra-wide bandgap semiconductor devices to obtain improved high power and high frequency applications. We will first discuss the use of such structures for vertical power devices. The high permittivity dielectrics help to reduce surface fields and therefore prevent tunnel leakage from Schottky barriers [1]. Insertion of high permittivity dielectrics can also enable better field termination in high voltage vertical devices [2]. We will discuss recent results using such high permittivity dielectrics in vertical device structures based on Gallium Oxide, leading to high vertical electric fields up to 5.7 MV/cm being sustained in the structure. We will discuss the application of these high permittivity dielectrics for three-terminal high frequency [3] and high voltage [4,5] wide bandgap transistor applications. In lateral transistors built from wide and ultra-wide bandgap semiconductors, gate breakdown and non-uniform electric fields lead to average device breakdown fields that are significantly lower than material limits. We will show how high permittivity dielectrics inserted between the gate and drain can prevent gate breakdown, and also create much more uniform electric field profiles. An analytical model to explain this will be presented and compared with 2-dimensional device simulations. Finally, we will show experimental results for lateral devices from the high Al-composition AlGaN [6], -Ga2O3[7], and AlGaN/GaN [8] material systems, where in each case, we are able to achieve state-of-art breakdown performance for devices such as lateral Schottky diodes and transistors. For example, we have achieved up to 8.3 MV/cm field in high Al-content AlGaN devices, >5.5 MV/cm in -Ga2O3-based transistors, and >3 MV/cm lateral electric field in AlGaN/GaN HEMTs. The high breakdown fields also enable us to achieve state-of-art switching figures of merit in these devices. The authors acknowledge funding from NNSA ETI Consortium, AFOSR GAME MURI Program (Program Manager Dr. Ali Sayir), AFOSR (Program Manager Dr. Kenneth Goretta) NSF ECCS- and the DARPA DREAM program (Program Manger Dr. YK Chen), managed by ONR (Program Manager Dr. Paul Maki) for support of the work. References [1] Xia, Zhanbo, et al. "Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field." Applied Physics Letters 115.25 (2019): 252104. [2] Lee, Hyun-Soo, et al. "High-permittivity dielectric edge termination for vertical high voltage devices." Journal of Computational Electronics 19.4 (2020): 1538-1545. [3] Xia, Zhanbo, et al. "Design of transistors using high-permittivity materials." IEEE Transactions on Electron Devices 66.2 (2019): 896-900. [4] Kalarickal, Nidhin Kurian, et al. "Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors." IEEE Transactions on Electron Devices 68.1 (2020): 29-35. [5] Hanawa, Hideyuki, et al. "Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-k Passivation Layer." IEEE Transactions on Electron Devices 61.3 (2014): 769-775. [6] Razzak, Towhidur, et al. "BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm." Applied Physics Letters 116.2 (2020): 023507. [7] Kalarickal, Nidhin Kurian, et al. "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm." IEEE Electron Device Letters 42.6 (2021): 899-902. [8] Rahman, Mohammad Wahidur, et al. "Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance." Applied Physics Letters 119.1 (2021): 013504.
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Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo et Edward Yi Chang. « The Evolution of Manufacturing Technology for GaN Electronic Devices ». Micromachines 12, no 7 (23 juin 2021) : 737. http://dx.doi.org/10.3390/mi12070737.

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.
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Wang, Li, et Chun Feng. « The International Research Progress of GaN-Based Microwave Electronic Devices ». Advanced Materials Research 1053 (octobre 2014) : 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.1053.69.

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The international research progress of GaN-based high frequency, high power microwave electronic device is introduced. The latest developments in high efficiency and millimeter wave devices are especially described.
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Feng, Jinjun, Yubin Gong, Chaohai Du et Adrian Cross. « High-Frequency Vacuum Electron Devices ». Electronics 11, no 5 (5 mars 2022) : 817. http://dx.doi.org/10.3390/electronics11050817.

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Vacuum electron devices at frequencies of millimeter waves and terahertz play highly important roles in the modern high-data rate and broadband communication system, high-resolution detection and imaging, medical diagnostics, magnetically confined nuclear fusion, etc [...]
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Ayubi-Moak, J. S., S. M. Goodnick et M. Saraniti. « Global Modeling of high frequency devices ». Journal of Computational Electronics 5, no 4 (9 décembre 2006) : 415–18. http://dx.doi.org/10.1007/s10825-006-0028-3.

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OHSHIMA, S. « Special Section on Superconducting High-frequency Devices ». IEICE Transactions on Electronics E89-C, no 2 (1 février 2006) : 97. http://dx.doi.org/10.1093/ietele/e89-c.2.97.

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Thèses sur le sujet "High frequency electronic devices"

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Stevens, M. J. « Digital control of high frequency pulse-width modulated inverters ». Thesis, University of Bristol, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373297.

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Ward, Gillian Anne. « Design of a multi-kilowatt, high frequency, DC-DC converter ». Thesis, University of Birmingham, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.274596.

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Williams, Richard. « High frequency multi-element transformers for switched-mode power supplies ». Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283625.

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Skulason, Helgi. « High-frequency characterization and applications of graphene devices ». Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119524.

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In this thesis, we have experimentally probed the microwave frequency electrodynamics of large area graphene, focussing on contactless measurements of graphene to extract material properties and implementation of non-reciprocal microwave devices. Our goal is to exploit interaction of graphene with electromagnetic waves in the microwave domain.By fabricating wideband graphene coplanar waveguides, we show that graphene has a constant wideband resistance from 17 Hz to 110 GHz due to negligible kinetic inductance and negligible skin effect up to 110 GHz. We characterize contact impedance between graphene and metal electrodes and our devices show that contact capacitance shorts the contact resistance above ~ 2 GHz, allowing for contactless measurements of graphene up to 110 GHz. We measured the magnetoconductance of large-area graphene under microwave excitation by employing Corbino disk geometry via the transfer of graphene films onto polished coaxial flanges. Our experimental setup allows for both passive and active graphene devices where the active devices are doped by field effect with an intrinsic silicon gate electrode transparent to microwaves. Magnetoconductive mobilities of ~ 1,000 cm2/Vs were extracted from a single component Drude model observed at high carrier density. An anomalous microwave magnetoresistance was also observed. We designed, fabricated and characterized a hollow waveguide isolator with a magnetically biased graphene acting as the non-reciprocal element via Faraday rotation. Our experimental setup allows for contactless characterization of conductivity, mobility and charge carrier density of the graphene film. Faraday rotation was measured up to 1.5° which resulted in isolation of 25 dB. We show that performance of the isolator can be improved by increasing carrier mobility in graphene. As the direction of Faraday rotation is contingent on majority charge carrier type in graphene, we give evidence that the isolation direction can be modulated and switched via field effect graphene device implemented in the hollow waveguide using a single low-power voltage source. We demonstrate the first voltage-tunable isolator with a maximum isolation of 47 dB and voltage-tunable isolation up to 26 dB. Our work suggests that other non-reciprocal devices such as circulators can be implemented compactly with graphene.
Dans cette thèse, nous avons expérimentalement sondé les micro-ondes électrodynamiques de graphène de grande surface, plus particulièrement les mesures de graphène sans contact pour en extraire les propriétés de la matière et la mise en œuvre de dispositifs non-réciproques générateurs de micro-ondes. Notre objectif consiste à exploiter l'interaction entre le graphène et les ondes électromagnétiques dans le domaine des micro-ondes. En fabriquant un guide d'ondes de graphène coplanaire à large bande, nous établissons que le graphène possède une résistance de large bande constante comprise entre 17 Hz et 110 GHz. Ceci est attribuable à l'inductivité cinétique et à l'effet pelliculaire négligeables jusqu'à 110 GHz. Nous décrivons l'impédance des contacts entre le graphène et les électrodes métalliques. Nos dispositifs démontrent que la capacitance de contact court-circuite la résistance de contact au-dessus de 2 GHz, permettant les mesures du graphène sans contact jusqu'à 110 GHz. Nous avons mesuré la conductivité magnétique du graphène à grande surface sous excitation de micro-ondes utilisant une géométrie de disque Corbino en transférant les films de graphène sur des embouts de câble coaxial polis. Notre installation permet l'utilisation de dispositifs de graphène actifs et passifs où les dispositifs actifs sont dopés par effet de champ avec une grille de silicium intrinsèque transparente aux micro-ondes. Nous avons extrait des mobilités à base de la conductivité magnétique autour de 1000 cm… en utilisant le model de Drude à une composante à haute densité. Une magnéto résistance atypique a également été observée. Nous avons créé, fabriqué et caractérisé un guide d'onde isolateur creux avec du graphène biaisé magnétiquement agissant comme élément non-réciproque par rotation de Faraday. Notre montage expérimentale permet la caractérisation sans contact de la conductivité, la mobilité et la densité de porteurs de charges du film de graphène. La rotation de Faraday a été mesuré jusqu'à 1.5 ce qui résulte en une isolation de 25dB. Nous démontrons que la performance de l'isolateur peut être améliorée en augmentant la mobilité dans le graphène. Étant donné que la direction de la rotation de Faraday dépend du signe du porteur de charge dominant dans le graphène, nous soumettons des données démontrant que la direction de l'isolation peut être modulée et changée en utilisant l'effet de champ implémenté dans le guide d'ondes creux avec une seule source de voltage à basse puissance. Notre travail suggère que d'autres dispositifs non-réciproques comme des circulateurs peuvent être implémentés de façon compacte avec du graphène.
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Lotfi, Ashraf W. « The electrodynamics of high frequency magnetics in power electronics / ». This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-06062008-171908/.

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Frake, James Christopher. « Investigations of mesoscopic device physics using high frequency electronic techniques ». Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.707903.

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Kudrya, V. G., et D. A. Voronenko. « Designing Nanotechnology Matching Devices ». Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35357.

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The work describes the features of simulation of the ultrahigh-frequency electromagnetic interaction, which forms an internal solenoid status of monolithic integrated circuits. As an example, is the study of matching devices, which are made in the form of the band-pass lines. The proposed method of modeling, to determine the dependence of the finite frequency and temporal characteristics of the cascading schemes amplifiers. Thus, the proposed method of modeling physical processes appear not only domestic but also external display spatially distributed nano-and micro-strip technology structures. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35357
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Lotfi, Ashraf Wagih. « The electrodynamics of high frequency magnetics in power electronics ». Diss., Virginia Tech, 1993. http://hdl.handle.net/10919/38504.

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The electromagnetic behavior of magnetic devices used in power electronics circuitry, is studied in order to predict their performance within a context of desirable circuit parameters. Past efforts have focused on simplifications widely used in electric machinery applications. Due to the greatly increased operating frequencies of today's circuits (in the upper kHz and lower MHz region), the operation and design of magnetic components greatly differs from those of 60 Hz machinery. A set of models based on assumptions that are unique to the these devices used in power electronics are put forth. The entire approach is based on deriving models from solutions of the field equations, rather than using older, less accurate circuit analogies. More importantly, models are needed for accurate design and optimization processes of complete power electronic systems, in which the magnetic components form a small part. Solutions are sought without using the popular simplifications at very low and very high frequencies, since they are not accurate at intermediate frequencies encountered in power electronics. The conductors used in transformers and inductors are modelled in these high frequency regions.
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Le, Minh-Nhat Ba. « ADVANCED THERMOSONIC WIRE BONDING USING HIGH FREQUENCY ULTRASONIC POWER : OPTIMIZATION, BONDABILITY, AND RELIABILITY ». DigitalCommons@CalPoly, 2009. https://digitalcommons.calpoly.edu/theses/177.

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Gold wire bonding typically uses 60 KHz ultrasonic frequency. Studies have been reported that increasing ultrasonic frequency from 60KHz to 120KHz can decrease bonding time, lower bonding temperature, and/or improve the bondability of Au metalized organic substrates. This thesis presents a systematic study of the effects of 120 KHz ultrasonic frequency on the reliability of fine pitch gold wire bonding. Two wire sizes, 25.4 and 17.8 μm in diameter (1.0 and 0.7 mil, respectively) were used. The gold wires were bonded to metalized pads over organic substrates with five different metallization. The studies were carried out using a thermosonic ball bonder that is able to easily switch from ultrasonic frequency from 60 KHz to 120 KHz by changing the ultrasonic transducer and the ultrasonic generator. Bonding parameters were optimized through design of experiment methodology for four different cases: 60 KHz with 25.4 μm wire, 60 KHz with 17.8 μm wire, 120 KHz with 25.4 μm wire, and 120 KHz with 17.8 μm wire. The integrity of wire bonds was evaluated by the wire pull and the ball bond shear tests. With the optimized bonding parameters, over 2,250 bonds were made for each frequency and wire size. The samples were then divided into three groups. The first group was subjected to temperature cycling from -55°C to +125°C with one hour per cycle for up to 1000 cycles. The second group was subject to thermal aging at 125°C for up to 1000 hours. The third group was subject to humidity at 85°C/85% relative humidity (RH) for up to 1000 hours. The bond integrity was evaluated through the wire pull and the ball shear tests immediately after bonding, and after each 150, 300, 500, and 1000 hours time interval in the reliability tests. The pull and shear data are then analyzed to compare the wire bond performance between different ultrasonic frequencies.
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Gradzki, Pawel Miroslaw. « Core loss characterization and design optimization of high-frequency power ferrite devices in power electronics applications ». Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-06062008-165934/.

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Livres sur le sujet "High frequency electronic devices"

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Fay, Patrick, Debdeep Jena et Paul Maki, dir. High-Frequency GaN Electronic Devices. Cham : Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-20208-8.

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P, Muralt, Materials Research Society, Materials Research Society Meeting et Symposium on Materials, Integration and Packaging Issues for High-Frequency Devices (2003 : Boston, Mass.), dir. Materials, integration and packaging issues for high-frequency devices : Symposium held December 1-3, 2003, Boston, Massachusetts, U.S.A. Warrendale, Pa : Materials Research Society, 2004.

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S, Cho Yong, Materials Research Society, Materials Research Society Meeting et Symposium on Materials, Integration and Packaging Issues for High-Frequency Devices (2004 : Boston, Mass.), dir. Materials, integration and packaging issues for high-frequency devices II : Symposium held November 29-December 1, 2004, Boston, Massachusetts, U.S.A. Warrendale, Pa : Materials Research Society, 2005.

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1954-, Peyghambarian Nasser, et Society of Photo-optical Instrumentation Engineers., dir. Nonlinear optics for high-speed electronics and optical frequency conversion : 24-26 January 1994, Los Angeles, California. Bellingham, Wash., USA : SPIE, 1994.

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1959-, Harjani Ramesh, dir. Design of high performance CMOS voltage-controlled oscillators. Boston : Kluwer Academic Publishers, 2003.

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Kazimierczuk, Marian. High-frequency magnetic components. Chichester, West Sussex, U.K : J. Wiley, 2009.

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Limited, Hitachi. Hitachi ultra high frequency devices data book. Tokyo : Hitachi Ltd, 1991.

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Martens, Luc. High-Frequency Characterization of Electronic Packaging. Boston, MA : Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5623-7.

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Martens, Luc. High-frequency characterization of electronic packaging. Boston : Kluwer Academic Publishers, 1998.

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F, Nibler, et Institution of Electrical Engineers, dir. High-frequency circuit engineering. London : Institution of Electrical Engineers, 1996.

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Chapitres de livres sur le sujet "High frequency electronic devices"

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Coffie, Robert L. « High Power High Frequency Transistors : A Material’s Perspective ». Dans High-Frequency GaN Electronic Devices, 5–41. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_2.

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Fay, Patrick, Debdeep Jena et Paul Maki. « Introduction and Overview ». Dans High-Frequency GaN Electronic Devices, 1–3. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_1.

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Sertel, Kubilay, et Georgios C. Trichopoulos. « Non-contact Metrology for mm-Wave and THz Electronics ». Dans High-Frequency GaN Electronic Devices, 283–99. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_10.

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Khurgin, J., et D. Jena. « Isotope Engineering of GaN for Boosting Transistor Speeds ». Dans High-Frequency GaN Electronic Devices, 43–82. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_3.

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Bader, Samuel James, Keisuke Shinohara et Alyosha Molnar. « Linearity Aspects of High Power Amplification in GaN Transistors ». Dans High-Frequency GaN Electronic Devices, 83–107. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_4.

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Yang, Zhichao, Digbijoy N. Nath, Yuewei Zhang, Sriram Krishnamoorthy, Jacob Khurgin et Siddharth Rajan. « III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) ». Dans High-Frequency GaN Electronic Devices, 109–57. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_5.

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Condori Quispe, Hugo O., Berardi Sensale-Rodriguez et Patrick Fay. « Plasma-Wave Propagation in GaN and Its Applications ». Dans High-Frequency GaN Electronic Devices, 159–79. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_6.

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Bhardwaj, Shubhendu, et John Volakis. « Numerical Simulation of Distributed Electromagnetic and Plasma Wave Effect Devices ». Dans High-Frequency GaN Electronic Devices, 181–214. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_7.

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Encomendero, Jimy, Debdeep Jena et Huili Grace Xing. « Resonant Tunneling Transport in Polar III-Nitride Heterostructures ». Dans High-Frequency GaN Electronic Devices, 215–47. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_8.

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Zhang, W. D., T. A. Growden, E. R. Brown, P. R. Berger, D. F. Storm et D. J. Meyer. « Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes ». Dans High-Frequency GaN Electronic Devices, 249–81. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_9.

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Actes de conférences sur le sujet "High frequency electronic devices"

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Wei, Yazhou, Mo Li, Yong Luo et Jian Zhang. « Ultra-High Frequency GaN Nanoscale Vacuum Electronic Devices ». Dans 2021 22nd International Vacuum Electronics Conference (IVEC). IEEE, 2021. http://dx.doi.org/10.1109/ivec51707.2021.9722483.

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Yamaguchi, M., Y. Endo et Y. Shimada. « High-frequency Magnetic Shielding Technology for Electronic Devices (Invited) ». Dans 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.c-7-3.

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Gonzalez, Tomas. « Carrier dynamics probed by noise in high-frequency electronic devices ». Dans 2015 International Conference on Noise and Fluctuations (ICNF). IEEE, 2015. http://dx.doi.org/10.1109/icnf.2015.7288541.

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Kanagawa, Naoki, Daisuke Sasaki et Shigeru Yamatsu. « Low Dielectric Properties Encapsulation for High Frequency Devices ». Dans 2018 IEEE 68th Electronic Components and Technology Conference (ECTC). IEEE, 2018. http://dx.doi.org/10.1109/ectc.2018.00285.

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Tanigawa, Takao, Etsuo Mizushima, Mami Shimada, Kohji Morita, Minoru Kakitani et Shin Takanezawa. « Low Transmission Loss Film Material for High-Speed High-Frequency Devices ». Dans 2018 IEEE 68th Electronic Components and Technology Conference (ECTC). IEEE, 2018. http://dx.doi.org/10.1109/ectc.2018.00264.

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Chatterjee, Subrangshu, Anumita Sengupta, Sudip Kundu et Aminul Islam. « Analysis of AlGaN/GaN high electron mobility transistor for high frequency application ». Dans 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073935.

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Yazawa, Kazuaki, Dustin Kendig et Ali Shakouri. « Thermal imaging characterization for high frequency and high power devices ». Dans 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC). IEEE, 2015. http://dx.doi.org/10.1109/icep-iaac.2015.7111043.

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Dudarev, N. V., et S. N. Darovskih. « Volumetric-modular technology for building high-frequency diagramming devices ». Dans 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). IEEE, 2018. http://dx.doi.org/10.1109/mwent.2018.8337281.

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Saijun Mao, Tao Wu, Xi Lu, Jelena Popovic et Jan Abraham Ferreira. « High frequency high voltage power conversion with silicon carbide power semiconductor devices ». Dans 2016 6th Electronic System-Integration Technology Conference (ESTC). IEEE, 2016. http://dx.doi.org/10.1109/estc.2016.7764721.

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Kreischer, K. E., B. G. Danly, H. Saito, J. B. Schutkeker, R. J. Temkin et T. M. Tran. « Development of high frequency gyrotrons ». Dans 1985 International Electron Devices Meeting. IRE, 1985. http://dx.doi.org/10.1109/iedm.1985.191020.

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Rapports d'organisations sur le sujet "High frequency electronic devices"

1

van der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, mars 2021. http://dx.doi.org/10.53109/ypdh3824.

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Résumé :
The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both the low frequency and radio frequency noise. Ultimately, for high performance filters the electron temperature can approach the phonon temperature (as measured by resistive thermometers) in a dilution refrigerator. In this application note, the method for measuring the electron temperature in a typical quantum electronics device using Coulomb blockade thermometry is described. This technique is applied to find the readily achievable electron temperature in the device when using the QFilter provided by QDevil. With our thermometry measurements, using a single GaAs/AlGaAs quantum dot in an optimized experimental setup, we determined an electron temperature of 28 ± 2 milli-Kelvin for a dilution refrigerator base temperature of 18 milli-Kelvin.
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Buhrman, Robert A. Ultra-High Frequency Superconductive Devices. Fort Belvoir, VA : Defense Technical Information Center, mai 1991. http://dx.doi.org/10.21236/ada236795.

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Wu, X. D., A. Finokoglu, M. Hawley, Q. Jia, T. Mitchell, F. Mueller, D. Reagor et J. Tesmer. High-temperature superconducting thin-film-based electronic devices. Office of Scientific and Technical Information (OSTI), septembre 1996. http://dx.doi.org/10.2172/378956.

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Hietala, V. M., T. A. Plut, S. H. Kravitz, G. A. Vawter, J. R. Wendt et M. G. Armendariz. Ultra-high-speed optical and electronic distributed devices. Office of Scientific and Technical Information (OSTI), août 1995. http://dx.doi.org/10.2172/109671.

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Buhrman, Robert A., Daniel C. Ralph, Bill Rippard, Tom Silva, Stephen Russek, Stuart A. Wolf, Arthur W. Lichtenberger, II Weikle, Deaver Robert M. et Bascom S. High-Frequency Spin-Based Devices for Nanoscale Signal Processing. Fort Belvoir, VA : Defense Technical Information Center, janvier 2009. http://dx.doi.org/10.21236/ada520629.

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Zolper, J. C., A. G. Baca, M. E. Sherwin et J. F. Klem. Ion implantation in compound semiconductors for high-performance electronic devices. Office of Scientific and Technical Information (OSTI), mai 1996. http://dx.doi.org/10.2172/231550.

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Sturm, James C. Reduced Strain Silicon-Based Heterostructures for High Speed Electronic Devices. Fort Belvoir, VA : Defense Technical Information Center, décembre 1998. http://dx.doi.org/10.21236/ada378013.

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DeFord, John F., Ben Held, Liya Chernyakova et John Petillo. Computer-Aided Design and Optimization of High-Performance Vacuum Electronic Devices. Fort Belvoir, VA : Defense Technical Information Center, février 2006. http://dx.doi.org/10.21236/ada444752.

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DeFord, J. F., B. Held, L. Chemykova et J. Petillo. Computer-Aided Design and Optimization of High-Performance Vacuum Electronic Devices. Fort Belvoir, VA : Defense Technical Information Center, août 2006. http://dx.doi.org/10.21236/ada454540.

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Deford, John F., Ben Held, Liya Chernyakova et John Petillo. Computer-Aided Design and Optimization of High-Performance Vacuum Electronic Devices. Fort Belvoir, VA : Defense Technical Information Center, novembre 2004. http://dx.doi.org/10.21236/ada428963.

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