Bibliographies thématiques / High frequency electronic applications / Articles de revues

Articles de revues sur le sujet « High frequency electronic applications »

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Auteur : Grafiati
Publié le 10 mars 2023

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1

Zampardi, P. J., K. Runge, R. L. Pierson, J. A. Higgins, R. Yu, B. T. McDermott et N. Pan. « Heterostructure-based high-speed/high-frequency electronic circuit applications ». Solid-State Electronics 43, no 8 (août 1999) : 1633–43. http://dx.doi.org/10.1016/s0038-1101(99)00113-6.

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2

Adachi, Michael M. « (Invited) Thickness-Modulated MoS2 for High-Frequency Electronic Applications ». ECS Meeting Abstracts MA2021-01, no 14 (30 mai 2021) : 664. http://dx.doi.org/10.1149/ma2021-0114664mtgabs.

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3

Tan, Qi Yao. « Applications of Simulation and Demo in High Frequency Electronic Circuit ». Applied Mechanics and Materials 427-429 (septembre 2013) : 450–54. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.450.

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This paper was based on the rich theoretical foundation and practical teaching experience, and focused on current teaching situation of high frequency electronic circuit and the cognition of simulation and demo, then it had the positive analysis on the superiority of simulation and demo in high frequency electronic circuit, and it also got the teaching case analysis on simulation and demo of parallel resonant circuit in the high frequency electronic circuit. Through establishment and verification of teaching effect model of high frequency electronic circuit, it can obtain that the teaching presents the advantage of positive feedback through the simulation and demo, and it also can provide new theoretical basis and path of exploration for the teaching research in this field.
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4

Headrick, J. M., et J. F. Thomason. « Applications of high-frequency radar ». Radio Science 33, no 4 (juillet 1998) : 1045–54. http://dx.doi.org/10.1029/98rs01013.

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MU, Chunhong, Huaiwu ZHANG, Yingli LIU, Yuanqiang SONG et Peng LIU. « Rare earth doped CaCu3Ti4O12 electronic ceramics for high frequency applications ». Journal of Rare Earths 28, no 1 (février 2010) : 43–47. http://dx.doi.org/10.1016/s1002-0721(09)60048-x.

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6

Xun Gong, W. J. Chappell et L. P. B. Katehi. « Multifunctional substrates for high-frequency applications ». IEEE Microwave and Wireless Components Letters 13, no 10 (octobre 2003) : 428–30. http://dx.doi.org/10.1109/lmwc.2003.818525.

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BURKE, P. J., C. RUTHERGLEN et Z. YU. « SINGLE-WALLED CARBON NANOTUBES : APPLICATIONS IN HIGH FREQUENCY ELECTRONICS ». International Journal of High Speed Electronics and Systems 16, no 04 (décembre 2006) : 977–99. http://dx.doi.org/10.1142/s0129156406004119.

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In this paper, we review the potential applications of single-walled carbon nanotubes in three areas: passives (interconnects), actives (transistors), and antennas. In the area of actives, potential applications include transistors for RF and microwave amplifiers, mixers, detectors, and filters. We review the experimental state of the art, and present the theoretical predictions (where available) for ultimate device performance. In addition, we discuss fundamental parameters such as dc resistance as a function of length for individual, single-walled carbon nanotubes.
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Hamed, Ahmed, Mohamed Saeed et Renato Negra. « Graphene-Based Frequency-Conversion Mixers for High-Frequency Applications ». IEEE Transactions on Microwave Theory and Techniques 68, no 6 (juin 2020) : 2090–96. http://dx.doi.org/10.1109/tmtt.2020.2978821.

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Gardes, C., Y. Roelens, S. Bollaert, J. S. Galloo, X. Wallart, A. Curutchet, C. Gaquiere et al. « Ballistic nanodevices for high frequency applications ». International Journal of Nanotechnology 5, no 6/7/8 (2008) : 796. http://dx.doi.org/10.1504/ijnt.2008.018698.

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Alshehri, Ali H., Malgorzata Jakubowska, Anna Młożniak, Michal Horaczek, Diana Rudka, Charles Free et J. David Carey. « Enhanced Electrical Conductivity of Silver Nanoparticles for High Frequency Electronic Applications ». ACS Applied Materials & ; Interfaces 4, no 12 (26 novembre 2012) : 7007–10. http://dx.doi.org/10.1021/am3022569.

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Liang, Yuan, Jianqiong Zhang, Qingxiang Liu et Xiangqiang Li. « High-Power Radial-Line Helical Subarray for High-Frequency Applications ». IEEE Transactions on Antennas and Propagation 66, no 8 (août 2018) : 4034–41. http://dx.doi.org/10.1109/tap.2018.2840840.

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12

Doolittle, William A., Sangbeom Kang et April Brown. « MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications ». Solid-State Electronics 44, no 2 (février 2000) : 229–38. http://dx.doi.org/10.1016/s0038-1101(99)00228-2.

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13

Kozakova, Zuzana, Ivo Kuritka, Vladimir Babayan, Natalia Kazantseva et Miroslav Pastorek. « Magnetic Iron Oxide Nanoparticles for High Frequency Applications ». IEEE Transactions on Magnetics 49, no 3 (mars 2013) : 995–99. http://dx.doi.org/10.1109/tmag.2012.2228471.

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14

Ludwig, A., M. Frommberger, M. Tewes et E. Quandt. « High-frequency magnetoelastic multilayer thin films and applications ». IEEE Transactions on Magnetics 39, no 5 (septembre 2003) : 3062–67. http://dx.doi.org/10.1109/tmag.2003.815894.

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Jeon, Sang-O., Tae-Sik Cheung et Woo-Young Choi. « Phase/frequency detectors for high-speed PLL applications ». Electronics Letters 34, no 22 (1998) : 2120. http://dx.doi.org/10.1049/el:19981493.

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Inoue, Mitsuteru, et Toshiro Sato. « Optical/high-frequency applications of functional magnetic materials ». IEEJ Transactions on Electrical and Electronic Engineering 4, no 1 (janvier 2009) : 6–7. http://dx.doi.org/10.1002/tee.20347.

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Çatli, B., et M. Hella. « Frequency synthesiser architecture eliminating high speed frequency dividers for millimetre-wave applications ». Electronics Letters 44, no 18 (2008) : 1071. http://dx.doi.org/10.1049/el:20081664.

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18

Shah, Kunal. « Reliable Nickel-Free Surface Finish Solution for High-Frequency, HDI PCB Applications ». Journal of Microelectronics and Electronic Packaging 17, no 4 (1 octobre 2020) : 121–27. http://dx.doi.org/10.4071/imaps.1227802.

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Abstract The evolution of Internet-enabled mobile devices has driven innovation in the manufacturing and design of technology capable of high-frequency electronic signal transfer. Among the primary factors affecting the integrity of high-frequency signals is the surface finish applied on printed circuit board copper pads—a need commonly met through the electroless nickel immersion gold process (ENIG). However, there are well-documented limitations of ENIG due to the presence of nickel, the properties of which result in an overall reduced performance in the high-frequency data transfer rate for ENIG-applied electronics, compared with bare copper. An innovation over traditional ENIG is a nickel-less approach involving a special nano-engineered barrier designed to coat copper contacts, finished with an outermost gold layer. In this study, assemblies involving this nickel-less novel surface finish have been subjected to extended thermal exposure, then intermetallics analyses, contact resistance comparison after every reflow cycle (up to six reflow cycles) to assess the prevention of copper atom diffusion into the gold layer, solder ball pull and shear tests to evaluate the aging and long-term reliability of solder joints, and insertion loss testing to gauge whether this surface finish can be used for high-frequency, high-density interconnect applications.
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19

Hinchliffe, S., et L. Hobson. « High power class-E amplifier for high-frequency induction heating applications ». Electronics Letters 24, no 14 (1988) : 886. http://dx.doi.org/10.1049/el:19880604.

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Wang, Yijie, Oscar Lucia et Zhe Zhang. « High and Very High Frequency Power Supplies for Industrial Applications ». IEEE Transactions on Industrial Electronics 67, no 2 (février 2020) : 1400–1404. http://dx.doi.org/10.1109/tie.2019.2929900.

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21

Ibrahim, Ali, Zoubir Khatir et Laurent Dupont. « Characterization and Aging Test Methodology for Power Electronic Devices at High Temperature ». Advanced Materials Research 324 (août 2011) : 411–14. http://dx.doi.org/10.4028/www.scientific.net/amr.324.411.

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Power electronic modules are key elements in the chain of power conversion. The application areas include aerospace, aviation, railway, electrical distribution, automotive, home automation, oil industry ... But the use of power electronics in high temperature environments is a major strategic issue in the coming years especially in transport. However, the active components based on silicon are limited in their applications and not suitable for those require both high voltages and high ambient temperatures. The materials with wide energy gap like SiC, GaN and diamond, have the advantage of being able to exceed these limits [1,2]. These materials seem adequate to extremely harsh temperature environments and allow the reduction of cooling systems, but also the increasing of switching frequency.
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22

Rhen, F., et S. Roy. « Electrodeposited CoNiFeP Soft-Magnetic Films for High-Frequency Applications ». IEEE Transactions on Magnetics 44, no 11 (novembre 2008) : 3917–20. http://dx.doi.org/10.1109/tmag.2008.2002254.

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23

Harrison, R. Chase, Benjamin K. Rhea, Frank T. Werner et Robert N. Dean. « A Compact and Low Power Realization of a High Frequency Chaotic Oscillator ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (1 janvier 2017) : 1–27. http://dx.doi.org/10.4071/2017dpc-tp4_presentation2.

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The desirable properties exhibited in some nonlinear dynamical systems have many potential uses. These properties include sensitivity to initial conditions, wide bandwidth, and long-term aperiodicity, which lend themselves to applications such as random number generation, communication and audio ranging systems. Chaotic systems can be realized in electronics by using inexpensive and readily available parts. Many of these systems have been verified in electronics using nonpermanent prototyping at very low frequencies; however, this restricts the range of potential applications. In particular, random number generation (RNG) benefits from an increase in operation frequency, since it is proportional to the amount of bits that can be produced per second. This work looks specifically at the nonlinear element in the chaotic system and evaluates its frequency limitations in electronics. In practice, many of nonlinearities are difficult to implement in high speed electronics. In addition to this restriction, the use of complex feedback paths and large inductors prevents the miniaturization that is desirable for implementing chaotic circuits in other electronic systems. By carefully analyzing the fundamental dynamics that govern the chaotic system, these problems can be addressed. Presented in this work is the design and realization of a high frequency chaotic oscillator that exhibits complex and rich dynamics while using a compact footprint and low power consumption.
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24

D'Errico, L., A. Lidozzi et L. Solero. « Neutral point clamped converter for high fundamental frequency applications ». IET Power Electronics 4, no 3 (2011) : 296. http://dx.doi.org/10.1049/iet-pel.2009.0166.

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25

KODAMA, S., et H. ITO. « UTC-PD-Based Optoelectronic Components for High-Frequency and High-Speed Applications ». IEICE Transactions on Electronics E90-C, no 2 (1 février 2007) : 429–35. http://dx.doi.org/10.1093/ietele/e90-c.2.429.

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26

Chan, Helen Lai-Wa, Kun Li et Chung-Loong Choy. « PSmT Ceramic Fibers for High Frequency Transducer Applications ». Ferroelectrics 324, no 1 (septembre 2005) : 11–19. http://dx.doi.org/10.1080/00150190500323479.

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27

Fergen, I., K. Seemann, A. v. d. Weth et A. Schüppen. « Soft ferromagnetic thin films for high frequency applications ». Journal of Magnetism and Magnetic Materials 242-245 (avril 2002) : 146–51. http://dx.doi.org/10.1016/s0304-8853(01)01185-4.

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28

Dubois, Marc-Alexandre, Paul Muralt et Laurent Sagalowicz. « Aluminum nitride thin films for high frequency applications ». Ferroelectrics 224, no 1 (mars 1999) : 243–50. http://dx.doi.org/10.1080/00150199908210573.

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29

JACOB, MOHAN V. « LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS ». International Journal of Modern Physics B 23, no 17 (10 juillet 2009) : 3649–54. http://dx.doi.org/10.1142/s0217979209063122.

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The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.
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30

Collins, Christina, et Maeve Duffy. « Limits and Opportunities for Distributed Inductors in High-Current, High-Frequency Applications ». IEEE Transactions on Power Electronics 25, no 11 (novembre 2010) : 2710–21. http://dx.doi.org/10.1109/tpel.2010.2047117.

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31

Heidrich, N., V. Zuerbig, D. Iankov, W. Pletschen, R. E. Sah, B. Raynor, L. Kirste, C. E. Nebel, O. Ambacher et V. Lebedev. « Piezoelectrically actuated diamond cantilevers for high-frequency applications ». Diamond and Related Materials 38 (septembre 2013) : 69–72. http://dx.doi.org/10.1016/j.diamond.2013.06.015.

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32

Bollaert, S., A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart et al. « Ballistic nano-devices for high frequency applications ». Thin Solid Films 515, no 10 (mars 2007) : 4321–26. http://dx.doi.org/10.1016/j.tsf.2006.07.178.

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33

Weon, Dae-Hee, Jong-Hyeok Jeon et Saeed Mohammadi. « High-Q micromachined three-dimensional integrated inductors for high-frequency applications ». Journal of Vacuum Science & ; Technology B : Microelectronics and Nanometer Structures 25, no 1 (2007) : 264. http://dx.doi.org/10.1116/1.2433984.

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34

C.S, Sajin, et Dr T. A. Shahul Hameed. « Review of CMOS Amplifiers for High Frequency Applications ». International Journal of Engineering and Advanced Technology 10, no 2 (30 décembre 2020) : 175–80. http://dx.doi.org/10.35940/ijeat.b2101.1210220.

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The headway in electronics technology proffers user-friendly devices. The characteristics such as high integration, low power consumption, good noise immunity are the significant benefits that CMOS offer, paying many challenges simultaneously with it. The short channel effects and presence of parasitic which prevent speed pose questions on the performance parameters. A great sort of works has done by many groups in the design of the CMOS amplifier for high-frequency applications to discuss the parameters such as power consumption, high bandwidth, high speed and linearity trade-off to obtain an optimized output. A lot of amplifier topologies are experimented and discussed in the literature with its design and simulation. In this paper, the various efforts associated with CMOS amplifier circuit for high-frequency applications are studying extensively.
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35

Bagolini, Alvise, Anze Sitar, Luca Porcelli, Maurizio Boscardin, Simone Dell’Agnello et Giovanni Delle Monache. « High Frequency MEMS Capacitive Mirror for Space Applications ». Micromachines 14, no 1 (8 janvier 2023) : 158. http://dx.doi.org/10.3390/mi14010158.

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Free space optics laser communication using modulating retroreflectors (MR) is a challenging application for an active mirror, due to the high frequencies (>100 kHz) required to enable sufficient data transfer. Micro Electromechanical (MEMS) mirrors are a promising option for high-frequency applications, given the very small moving mass typical of such devices. Capacitive MEMS mirrors are presented here for free space communications, based on a novel fabrication sequence that introduces a single-layer thin film aluminum mirror structure with an underlying silicon oxide sacrificial layer. The use of aluminum instead of gold as a mirror layer diminishes the heating generated by the absorption of the sun’s radiation once the mirrors exit the earth’s atmosphere. Thanks to the novel fabrication sequence, the presented mirror devices have a full range actuation voltage of less than 40 V, and a high operational frequency with an eigenfrequency above 2 MHz. The devices were manufactured and characterized, and their main parameters were obtained from experimental data combined with finite element analysis, thus enabling future design optimization of the reported MEMS technology. By optical characterization of the far field diffraction pattern, good mirror performance was demonstrated.
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36

Dmitriev, P. N., I. L. Lapitskaya, L. V. Filippenko, A. B. Ermakov, S. V. Shitov, G. V. Prokopenko, S. A. Kovtonyuk et V. P. Koshelets. « High quality Nb-based tunnel junctions for high frequency and digital applications ». IEEE Transactions on Appiled Superconductivity 13, no 2 (juin 2003) : 107–10. http://dx.doi.org/10.1109/tasc.2003.813657.

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Verd, J., A. Uranga, J. Teva, J. L. Lopez, F. Torres, J. Esteve, G. Abadal, F. Perez-Murano et N. Barniol. « Integrated CMOS-MEMS with on-chip readout electronics for high-frequency applications ». IEEE Electron Device Letters 27, no 6 (juin 2006) : 495–97. http://dx.doi.org/10.1109/led.2006.875147.

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38

Lin, Chun-Yu, et Yi-Quan Fu. « RC-diode ESD protection design for high-frequency applications ». Solid-State Electronics 188 (février 2022) : 108222. http://dx.doi.org/10.1016/j.sse.2021.108222.

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39

Liu, A. Q., M. Tang, A. Agarwal et A. Alphones. « Low-loss lateral micromachined switches for high frequency applications ». Journal of Micromechanics and Microengineering 15, no 1 (26 octobre 2004) : 157–67. http://dx.doi.org/10.1088/0960-1317/15/1/023.

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Ndjountche, Tertulien, et A. Avebe Zibi. « Adaptive switched capacitor biquadratic filter with high-frequency applications ». International Journal of Circuit Theory and Applications 24, no 5 (septembre 1996) : 529–39. http://dx.doi.org/10.1002/(sici)1097-007x(199609/10)24:5<529 ::aid-cta932>3.0.co;2-8.

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41

Xing, Z., L. Wang, C. Wu et K. Wei. « Study of broadband near-field antenna for ultra-high-frequency radio frequency identification applications ». IET Microwaves, Antennas & ; Propagation 5, no 14 (2011) : 1661. http://dx.doi.org/10.1049/iet-map.2011.0076.

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42

Saadat, O. I., J. W. Chung, E. L. Piner et T. Palacios. « Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications ». IEEE Electron Device Letters 30, no 12 (décembre 2009) : 1254–56. http://dx.doi.org/10.1109/led.2009.2032938.

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HIGASHIWAKI, M., T. MIMURA et T. MATSUI. « Development of High-Frequency GaN HFETs for Millimeter-Wave Applications ». IEICE Transactions on Electronics E91-C, no 7 (1 juillet 2008) : 984–88. http://dx.doi.org/10.1093/ietele/e91-c.7.984.

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MateosLopez, J., T. Gonzalez, D. Pardo, S. Bollaert, T. Parenty et A. Cappy. « Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications ». IEEE Transactions on Electron Devices 51, no 4 (avril 2004) : 521–28. http://dx.doi.org/10.1109/ted.2004.823799.

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Cohn, D. R., L. Bromberg, W. Halverson, B. Lax et P. P. Woskov. « Possible high-frequency cavity and waveguide applications of high temperature superconductors ». International Journal of Infrared and Millimeter Waves 8, no 12 (décembre 1987) : 1503–24. http://dx.doi.org/10.1007/bf01012438.

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46

Babu, A. R. Vijay, P. M. Venkatesh et Dr K. Suresh. « High Frequency Link Power Conversion System for Fuel cell Applications ». International Journal of Engineering & ; Technology 7, no 4.24 (27 novembre 2018) : 1. http://dx.doi.org/10.14419/ijet.v7i4.24.21760.

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In this paper an empirical model of the air breathing (ABFC) is proposed to investigate the cell voltage verses current density characteristics and harnessing of maximum energy from natural resource whenever it’s available. The power electronic converters role is important in between source and load. Proper controller can switch the converter in the desired time and improve the system performance and stability. The mathematical model of the ABFC is built in MATLAB/Simulink. The proposed system also has boost converter, bidirectional DC-DC converter and inverter for grid and energy integration. The boost inverter/buck rectifier in this system is controlled by ANFIS controller is for better output, boost and bidirectional DC-DC converters are controlled by PID controller in closed loop. Overall operations are based on modes main controller, which control the system operation in different modes. Any variations happening in the input, storage and load parameters, the controller changes the mode and operates the system in effective way.
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47

Shirakata, Y., N. Hidaka, M. Ishitsuka, A. Teramoto et T. Ohmi. « High Permeability and Low Loss Ni–Fe Composite Material for High-Frequency Applications ». IEEE Transactions on Magnetics 44, no 9 (septembre 2008) : 2100–2106. http://dx.doi.org/10.1109/tmag.2008.2001073.

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48

Khan, Shahidul I., Phoivos D. Ziogas et Muhammed H. Rashid. « Forced Commutated Cycloconverters for High-Frequency Link Applications ». IEEE Transactions on Industry Applications IA-23, no 4 (juillet 1987) : 661–72. http://dx.doi.org/10.1109/tia.1987.4504964.

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49

Ota, Yorito. « High-frequency power applications using wide-bandgap semiconductors ». Electronics and Communications in Japan (Part II : Electronics) 81, no 9 (septembre 1998) : 54–61. http://dx.doi.org/10.1002/(sici)1520-6432(199809)81:9<54 ::aid-ecjb7>3.0.co;2-0.

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50

Almalah, Noor Thamer, et Faris Hasan Aldabbagh. « Inductanceless high order low frequency filters for medical applications ». International Journal of Electrical and Computer Engineering (IJECE) 12, no 2 (1 avril 2022) : 1299. http://dx.doi.org/10.11591/ijece.v12i2.pp1299-1307.

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<p>In this paper, a designed circuit used for low-frequency filters is implemented and realized the filter is based on frequency-dependent negative resistance (FDNR) as an inductor simulator to substitute the traditional inductance, which is heavy and high cost due to the coil material manufacturing and size area. The simulator is based on an active operation amplifier or operation transconductance amplifier (OTA) that is easy to build in an integrated circuit with a minimum number of components. The third and higher-order Butterworth filter is simulated at low frequency for low pass filter to use in medical instruments and low-frequency applications. The designed circuit is compared with the traditional proportional integral controller enhanced (PIE) and T section ordinary filter. The results with magnitude and phase response were compared and an acceptable result is obtained. The filter can be used for general applications such as medical and other low-frequency filters needed.</p>
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