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Articles de revues sur le sujet « High-Density thin films »

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Auteur : Grafiati
Publié le 25 mai 2024

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1

Xiaoting Fang, Xiaoting Fang, Shengfu Yuan Shengfu Yuan, Wenguang Liu Wenguang Liu, Baozhu Yan Baozhu Yan et Bing Huang Bing Huang. « Absorption measurement of optical thin films under high power density with a Closed Cavity ». Chinese Optics Letters 13, no 3 (2015) : 033101–33104. http://dx.doi.org/10.3788/col201513.033101.

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Fiorenza, Patrick, Raffaella Lo Nigro, Vito Raineri, Graziella Malandrino, Roberta G. Toro et Maria R. Catalano. « High capacitance density by CaCu3Ti4O12 thin films ». Journal of Applied Physics 108, no 7 (octobre 2010) : 074103. http://dx.doi.org/10.1063/1.3488893.

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3

Banu, Nasrin, Surendra Singh, Saibal Basu, Anupam Roy, Hema C. P. Movva, V. Lauter, B. Satpati et B. N. Dev. « High density nonmagnetic cobalt in thin films ». Nanotechnology 29, no 19 (15 mars 2018) : 195703. http://dx.doi.org/10.1088/1361-6528/aab0e9.

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Lodder, J. C. « Magnetic thin films for high-density recording ». Thin Solid Films 281-282 (août 1996) : 474–83. http://dx.doi.org/10.1016/0040-6090(96)08679-8.

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5

Wang, Yong, Xin Zhou, Minren Lin et Q. M. Zhang. « High-energy density in aromatic polyurea thin films ». Applied Physics Letters 94, no 20 (18 mai 2009) : 202905. http://dx.doi.org/10.1063/1.3142388.

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Byeon, S. C., Y. Ding et C. Alexander. « High moment FeTiN thin films for high density recording heads ». IEEE Transactions on Magnetics 36, no 5 (2000) : 2502–5. http://dx.doi.org/10.1109/20.908487.

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Yu, Shihui, Chunmei Zhang, Muying Wu, Helei Dong et Lingxia Li. « Ultra-high energy density thin-film capacitors with high power density using BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3 heterostructure thin films ». Journal of Power Sources 412 (février 2019) : 648–54. http://dx.doi.org/10.1016/j.jpowsour.2018.12.012.

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8

Yan, S. L., Y. Y. Xie, J. Z. Wu, T. Aytug, A. A. Gapud, B. W. Kang, L. Fang et al. « High critical current density in epitaxial HgBa2CaCu2OX thin films ». Applied Physics Letters 73, no 20 (16 novembre 1998) : 2989–91. http://dx.doi.org/10.1063/1.122653.

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9

Ye, M., M. Mehbod et R. Deltour. « High critical current density in epitaxial YBa2Cu3O7 thin films ». Physica B : Condensed Matter 204, no 1-4 (janvier 1995) : 200–205. http://dx.doi.org/10.1016/0921-4526(94)00264-v.

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Wen, Fei, Zhuo Xu, Weimin Xia, Hongjun Ye, Xiaoyong Wei et Zhicheng Zhang. « High-Energy-Density Poly(styrene-co-acrylonitrile) Thin Films ». Journal of Electronic Materials 42, no 12 (8 octobre 2013) : 3489–93. http://dx.doi.org/10.1007/s11664-013-2764-z.

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Li, Zongxin, Hanxing Liu, Zhonghua Yao, Juan Xie, Xixi Li, Chunli Diao, Amjad Ullah, Hua Hao et Minghe Cao. « Novel BiAlO3 dielectric thin films with high energy density ». Ceramics International 45, no 17 (décembre 2019) : 22523–27. http://dx.doi.org/10.1016/j.ceramint.2019.07.278.

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12

LODDER, J. C. « ChemInform Abstract : Magnetic Thin Films for High-Density Recording ». ChemInform 28, no 6 (4 août 2010) : no. http://dx.doi.org/10.1002/chin.199706325.

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Song, Baijie, Kun Zhu, Hao Yan, Liuxue Xu, Bo Shen et Jiwei Zhai. « High energy storage density with high power density in Bi0.2Sr0.7TiO3/BiFeO3 multilayer thin films ». Journal of Materials Chemistry C 9, no 13 (2021) : 4652–60. http://dx.doi.org/10.1039/d0tc05646d.

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A novel Bi0.2Sr0.7TiO3/BiFeO3 thin film prepared by sol–gel/spin coating possesses ultrahigh energy storage density, good thermal stability and excellent charge-discharge performance.
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14

Schwan, J., S. Ulrich, T. Theel, H. Roth, H. Ehrhardt, P. Becker et S. R. P. Silva. « Stress-induced formation of high-density amorphous carbon thin films ». Journal of Applied Physics 82, no 12 (15 décembre 1997) : 6024–30. http://dx.doi.org/10.1063/1.366469.

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Christodoulides, J. A., Y. Huang, Y. Zhang, G. C. Hadjipanayis, I. Panagiotopoulos et D. Niarchos. « CoPt and FePt thin films for high density recording media ». Journal of Applied Physics 87, no 9 (mai 2000) : 6938–40. http://dx.doi.org/10.1063/1.372892.

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Ramzi, A., A. Taoufik, S. Senoussi, A. Tirbiyine et A. Abaragh. « The critical current density in high quality YBaCuO thin films ». Physica A : Statistical Mechanics and its Applications 358, no 1 (décembre 2005) : 119–22. http://dx.doi.org/10.1016/j.physa.2005.06.012.

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17

Xu, Xiao-Hong, Hai-Shun Wu, Xiao-Li Li et Fang Wang. « FePt/C granular thin films for high-density magnetic recording ». Materials Chemistry and Physics 90, no 1 (mars 2005) : 95–98. http://dx.doi.org/10.1016/j.matchemphys.2004.10.014.

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Karanasos, V., I. Panagiotopoulos, D. Niarchos, H. Okumura et G. C. Hadjipanayis. « CoPt:B granular thin films for high density magnetic recording media ». Journal of Magnetism and Magnetic Materials 236, no 1-2 (octobre 2001) : 234–41. http://dx.doi.org/10.1016/s0304-8853(01)00045-2.

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19

Cord, B., W. Maass, J. Schroeder, K. H. Schuller et U. Patz. « Application of magnetic thin films for high-density data storage ». Thin Solid Films 175 (août 1989) : 287–93. http://dx.doi.org/10.1016/0040-6090(89)90841-9.

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20

Mellbring, O., S. Kihlman Øiseth, A. Krozer, J. Lausmaa et T. Hjertberg. « Spin Coating and Characterization of Thin High-Density Polyethylene Films ». Macromolecules 34, no 21 (octobre 2001) : 7496–503. http://dx.doi.org/10.1021/ma000094x.

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Li, J., S. S. Rosenblum, W. Nojima, H. Hayashi et R. Sinclair. « High density recording characteristics of sputtered barium ferrite thin films ». IEEE Transactions on Magnetics 31, no 6 (1995) : 2749–51. http://dx.doi.org/10.1109/20.490139.

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Liu, Xiaoxi, Jianmin Bai, Fulin Wei, Zheng Yang, Akimitsu Morisako et Mitsunori Matsumoto. « Partially crystallized BaM thin films for high density magnetic recording ». Materials Science and Engineering : B 65, no 2 (novembre 1999) : 90–93. http://dx.doi.org/10.1016/s0921-5107(99)00185-3.

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Cole, Amanda, Gregory B. Thompson, J. W. Harrell, J. Weston et Ronald Ott. « High-density plasma-arc heating studies of FePt thin films ». JOM 58, no 6 (juin 2006) : 39–42. http://dx.doi.org/10.1007/s11837-006-0179-5.

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24

Chen, L. J., S. L. Cheng, C. H. Yu, P. Y. Su, H. H. Lin et K. S. Chi. « Structural Evolution in Amorphous Silicon and Germanium Thin Films ». Microscopy and Microanalysis 8, no 4 (août 2002) : 268–73. http://dx.doi.org/10.1017/s1431927602020202.

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The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.
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25

Abdel-Hamid, H. M., S. M. El-Sayed et R. M. Radwan. « High-field conduction in high-density polyethylene thin films irradiated with electron beams ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 215, no 3-4 (février 2004) : 479–85. http://dx.doi.org/10.1016/j.nimb.2003.10.001.

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26

Malhotra, S. S., Y. Liu, Z. S. Shan, S. H. Liou, D. C. Stafford et D. J. Sellmyer. « Nanocrystalline high coercivity PrCo//Cr thin films : Potential high density magnetic recording media ». Journal of Magnetism and Magnetic Materials 161 (août 1996) : 316–22. http://dx.doi.org/10.1016/s0304-8853(96)00051-0.

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27

Pan, Yaru, Xihui Liang, Zhihao Liang, Rihui Yao, Honglong Ning, Jinyao Zhong, Nanhong Chen, Tian Qiu, Xiaoqin Wei et Junbiao Peng. « Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films ». Membranes 12, no 7 (22 juin 2022) : 641. http://dx.doi.org/10.3390/membranes12070641.

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Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal–insulator–metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZOx) group of 0.6 M has the lowest leakage current density, which is 5.03 × 10−8 A/cm2 @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZOx) group of 0.8 M has a maximum capacitance density of 208 nF/cm2. The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.
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28

Kamaata, Hiroshi, Makoto Sakai et Kazuei Shikama. « Application of high density Ar plasma for optical thin films coating ». JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 84, Appendix (2000) : 41. http://dx.doi.org/10.2150/jieij1980.84.appendix_41.

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29

Do-Kyun Kwon et Min Hyuk Lee. « Temperature-stable high-energy-density capacitors using complex perovskite thin films ». IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 59, no 9 (septembre 2012) : 1894–99. http://dx.doi.org/10.1109/tuffc.2012.2403.

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Hidaka, T., T. Maruyama, I. Sakai, M. Saitoh, L. A. Wills, R. Hiskes, S. A. Dicarolis, Jun Amano et C. M. Foster. « Characteristics of PZT thin films as ultra-high density recording media ». Integrated Ferroelectrics 17, no 1-4 (septembre 1997) : 319–27. http://dx.doi.org/10.1080/10584589708013006.

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31

Mua, N. T., C. R. Serrao, Shipra, A. Sundaresan, T. D. Hien et N. K. Man. « High critical current density in Ag-doped Bi-2212 thin films ». Superconductor Science and Technology 21, no 10 (21 juillet 2008) : 105002. http://dx.doi.org/10.1088/0953-2048/21/10/105002.

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Zhu, X., H. Kotadia, S. Xu, H. Lu, S. H. Mannan, C. Bailey et Y. C. Chan. « Electromigration in Sn–Ag solder thin films under high current density ». Thin Solid Films 565 (août 2014) : 193–201. http://dx.doi.org/10.1016/j.tsf.2014.06.030.

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Vlachopoulou, M. E., P. Dimitrakis, A. Tserepi, V. Em Vamvakas, S. Koliopoulou, P. Normand, E. Gogolides et D. Tsoukalas. « High-density plasma silicon oxide thin films grown at room-temperature ». Microelectronic Engineering 85, no 5-6 (mai 2008) : 1245–47. http://dx.doi.org/10.1016/j.mee.2008.01.010.

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Wi, Jae-Hyung, Jong-Chang Woo, Doo-Seung Um, JunSeong Kim et Chang-Il Kim. « Surface properties of etched ITO thin films using high density plasma ». Thin Solid Films 518, no 22 (septembre 2010) : 6228–31. http://dx.doi.org/10.1016/j.tsf.2010.03.166.

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35

Katayama, Nobuhiro, Xiaoxi Liu et Akimitsu Morisako. « Self-assembled L10 FePt thin films for high-density magnetic recording ». Journal of Magnetism and Magnetic Materials 303, no 2 (août 2006) : e255-e257. http://dx.doi.org/10.1016/j.jmmm.2006.01.054.

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Hogan, Zach L., Cortney R. Kreller, Kiet A. Tran, Mark W. Hart, Gregory M. Wallraff, Sally A. Swanson, Willi Volksen et al. « Patterned nanoporous poly(methylsilsesquioxane) thin films : a potential high density substrate ». Materials Science and Engineering : C 24, no 4 (juin 2004) : 487–90. http://dx.doi.org/10.1016/j.msec.2003.10.002.

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Lupton, D. F. « Optimized ITO thin films from ultra-high-density single-phase targets ». Journal of the Society for Information Display 7, no 4 (1999) : 249. http://dx.doi.org/10.1889/1.1985289.

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Daineka, D., P. Bulkin, G. Girard, J. E. Bourée et B. Drévillon. « High density plasma enhanced chemical vapor deposition of optical thin films ». European Physical Journal Applied Physics 26, no 1 (4 mars 2004) : 3–9. http://dx.doi.org/10.1051/epjap:2004013.

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Glijer, P., J. M. Sivertsen et J. H. Judy. « Advanced multilayer thin films for ultra-high density magnetic recording media ». IEEE Transactions on Magnetics 30, no 6 (1994) : 3957–59. http://dx.doi.org/10.1109/20.333956.

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Fan, Q., B. McQuillin, A. K. Ray, M. L. Turner et A. B. Seddon. « High density, non-porous anatase titania thin films for device applications ». Journal of Physics D : Applied Physics 33, no 21 (17 octobre 2000) : 2683–86. http://dx.doi.org/10.1088/0022-3727/33/21/303.

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41

Kondo, Keisuke, Seiya Motoki, Takafumi Hatano, Takahiro Urata, Kazumasa Iida et Hiroshi Ikuta. « NdFeAs(O,H) epitaxial thin films with high critical current density ». Superconductor Science and Technology 33, no 9 (4 août 2020) : 09LT01. http://dx.doi.org/10.1088/1361-6668/aba353.

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Takeda, J., H. Jinnouchi, S. Kurita, Y. F. Chen et T. Yao. « Dynamics of Photoexcited High Density Carriers in ZnO Epitaxial Thin Films ». physica status solidi (b) 229, no 2 (janvier 2002) : 877–80. http://dx.doi.org/10.1002/1521-3951(200201)229:2<877 ::aid-pssb877>3.0.co;2-k.

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43

Xu, Y. F., M. L. Yan et D. J. Sellmyer. « FePt Nanocluster Films for High-Density Magnetic Recording ». Journal of Nanoscience and Nanotechnology 7, no 1 (1 janvier 2007) : 206–24. http://dx.doi.org/10.1166/jnn.2007.18016.

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High anisotropy L10 ordered FePt thin films are considered to have high potential for use as high areal density recording media, beyond 1 Tera bit/in2. In this paper, we review recent results on the synthesis and magnetic properties of L10 FePt nanocomposite films. Several fabrication methods have been developed to produce high-anisotropy FePt films: epitaxial and non-epitaxial growth of (001)-oriented FePt:X (X = Au, Ag, Cu, C, etc.) composite films that might be used for perpendicular media; monodispersed FePt nanocluster-assembled films grown with a gas-aggregation technique and having uniform cluster size and narrow size distribution; self-assembled FePt particles prepared with chemical synthesis by reduction/decomposition techniques, etc. The magnetic properties are controllable through variations in the nanocluster properties and nanostructure. FePt and related films show promise for development as heat-assisted magnetic recording media at extremely high areal densities. The self-assembled FePt arrays show potential for approaching the ultimate goal of single-grain-per-bit patterned media.
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44

Meena, S. P., et R. Ashokkumar. « Effect of different Current density on Properties of Electrodeposited Ni-Co-Cr Thin Films ». Oriental Journal of Chemistry 34, no 4 (31 juillet 2018) : 1884–89. http://dx.doi.org/10.13005/ojc/3404023.

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NiCoCr thin films were electroplated for different current density. FCC structured crystals were observed in XRD study. Coercive force and magnetization value exhibits soft magnetic nature. Electroplated NiCoCr films with electrolytic current density (2, 3, 4 and 5 mil.Amp/cm2) shows uniform deposition on the substrate. Cobalt composition was minimum as 21.31 wt% for current density 5 mA/cm2. The consistence of chromium and nickel increased while current density was improved. Thin films deposition with high current density shows low hysteresis loss and soft magnetic nature.The hardness of deposits increases when current density is increased.
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Chen, Fei, Jun Yan Wu, Qiang Shen, Julie M. Schoenung et Lian Meng Zhang. « Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods ». Materials Science Forum 783-786 (mai 2014) : 1973–78. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1973.

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Good crystalline of ATO thin films is necessary to improve the electrical and optical properties. In this paper, ATO thin films were fabricated using PLD method at high temperature of 550 °C, and the effect of laser energy density on the microstructure, electrical property and optical property of the ATO films is discussed. The results suggest that ATO films show good crystalline when deposited at high temperature of 550 °C. Both the electrical and optical properties have been enhanced with the increasing of laser energy density. When the laser energy density is 5.4 J/cm2, the lowest resistivity of ATO thin film is obtained with the value of 6.52×10-4 Ω·cm and the average optical transmittances is 82.0 %.
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46

McIntyre, P. C., et M. J. Cima. « Microstructural inhomogeneities in chemically derived Ba2YCu3O7−x thin films : Implications for flux pinning ». Journal of Materials Research 9, no 11 (novembre 1994) : 2778–88. http://dx.doi.org/10.1557/jmr.1994.2778.

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A gradient in the density of polytypoidal stacking faults was observed through the thickness of chemically derived epitaxial Ba2YCu3O7−x (BYC) films on (001) LaAlO3. Cross-sectional TEM studies indicated that films of less than 100 nm thickness were faulted, with a high density of polytypoidal stacking faults. A decrease in stacking fault density in thicker films (300-500 nm thick) was found with increasing distance from the most defective layer near the film/substrate interface. An abrupt transition from highly faulted material near the substrate to essentially stacking fault-free BYC in the upper part of the films was observed in several cases. The present observations are compared with the previously reported1 decrease in critical current density with increasing thickness of these films. Possible implications for flux pinning in BYC thin films are discussed.
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47

Wada, Takahiro, Takayuki Negami et Mikihiko Nishitani. « Growth defects in CuInSe2 thin films ». Journal of Materials Research 9, no 3 (mars 1994) : 658–62. http://dx.doi.org/10.1557/jmr.1994.0658.

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CuInSe2 thin film solar cells with an efficiency of about 10% were studied with a cross-sectional high resolution transmission electron microscope (HRTEM). The growth defects such as twins, stacking faults, and intergrowth phase in the CuInSe2 thin films were studied in detail. Polycrystalline CuInSe2 films were deposited on a Mo-coated glass substrate by using the three source evaporation system. The CuInSe2 film contains fivefold multiply twinned crystallites as well as a high density of twins in the {112} plane. The CuInSe2 film also contains intergrowth phase with a long range of periodicities of 10 Å parallel to the [112] direction of the chalcopyrite structure. The intergrowth phase composition is similar to the chalcopyrite phase. The structural model of the intergrowth phase is proposed on the basis of the high resolution electron micrograph.
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48

Surdu, Andrei E., Hassan H. Hamdeh, I. A. Al-Omari, David J. Sellmyer, Alexei V. Socrovisciuc, Andrei A. Prepelita, Ezgi T. Koparan et al. « Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields ». Beilstein Journal of Nanotechnology 2 (14 décembre 2011) : 809–13. http://dx.doi.org/10.3762/bjnano.2.89.

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The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (J c) from the magnetization hysteresis (M–H) curves for both sets of samples and found that the J c value of FeO-coated films is higher at all fields and temperatures than the J c value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.
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Bailey, A., C. Alvarez, T. Puzzer, DN Matthews, K. Sealey, CJ Russell et KNR Taylor. « Fabrication of Superconducting YBCO Thin Films on YSZ Substrates ». Australian Journal of Physics 43, no 3 (1990) : 347. http://dx.doi.org/10.1071/ph900347.

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High critical current density thick films of YBCO have been fabricated on yttria stabilised zirconia substrates. The quality and performance of the films was found to depend markedly on the processing of the initial starting powder used to form the printing ink for a fixed film processing cycle. Depending on the powder used, the critical transition temperature, TdR=O), was found to vary between 87 and 91�5 K, and the critical current density was in the range 25 to 1200 A cm-2 at 77 K in zero external magnetic field.
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50

Michelazzi, Marco, et Davide Fabiani. « Electrical Conduction in Thin-Film Polypropylene Capacitors ». Energies 16, no 18 (15 septembre 2023) : 6631. http://dx.doi.org/10.3390/en16186631.

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Thin polypropylene films have played a strategic role in recent years because they are the dielectric of choice for high-energy-density and high-power-density DC-link capacitors, and have been extensively used in renewable energy and electric mobility applications. Currently, these capacitors operate at temperatures of up to 105 °C with electric fields of up to 200 V/µm, allowing high efficiency due to their low dissipation figures compared to other capacitor technologies. The rapid evolution of green energy applications demands higher energy and power density, with expected operating temperatures and electric fields of up to 115 °C and above 250 V/µm, respectively. Under such conditions, the insulation resistance of the capacitor becomes a key factor, as it may start to contribute to the dissipation of energy. A correct understanding of conduction phenomena within the dielectric is necessary for the design of new high-performance capacitors based on polypropylene film with reduced conduction losses. The scope of this review is to present and evaluate the theoretical and experimental works on thin biaxially oriented polypropylene (BOPP) films for capacitor applications with a focus on electrical conductivity at high electric field and temperature.
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