Bibliographies thématiques / Heterojunction semiconductor devices

Littérature scientifique sur le sujet « Heterojunction semiconductor devices »

Auteur : Grafiati
Publié le 11 mars 2023

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Articles de revues sur le sujet "Heterojunction semiconductor devices"

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WESSELS, B. W. « MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS ». SPIN 03, no 04 (décembre 2013) : 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
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Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan et Dandan Sang. « A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction ». Molecules 28, no 3 (30 janvier 2023) : 1334. http://dx.doi.org/10.3390/molecules28031334.

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.
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Mizuno, Tomohisa, Mitsuo Hasegawa et Toshiyuki Sameshima. « Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors ». Key Engineering Materials 470 (février 2011) : 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.470.72.

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We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary-metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without poly crystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets EC and EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.
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Gaudillat, Pierre, Jean Moïse Suisse et Marcel Bouvet. « Humidity Insensitive Conductometric Sensors for Ammonia Sensing ». Key Engineering Materials 605 (avril 2014) : 181–84. http://dx.doi.org/10.4028/www.scientific.net/kem.605.181.

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Interest in molecular materials has been driven in large part by their various and prosperous applications, especially in the domain of organic electronics, where they offer many advantages as well as alternative approaches compared to their inorganic counterparts. Most of conductometric transducers are resistors[[ and transistors[[[, but rarely diodes[6]. In our laboratory, we designed and characterized new molecular material based devices. Molecular Semiconductor Doped Insulator (MSDI) heterojunctions were built around a heterojunction between a Molecular Semiconductor (MS) and a Doped Insulator (DI)[7][8]. This new device exhibits interesting electronic properties that allow ammonia sensing in a large humidity range at room temperature.
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Zhuiykov, Serge, et Zhen Yin Hai. « Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions ». Key Engineering Materials 765 (mars 2018) : 8–11. http://dx.doi.org/10.4028/www.scientific.net/kem.765.8.

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Large-scale fabrication of two-dimensional (2D) nanomaterials by vapor phase depostion enabled the establishment of vertically aligned semiconductor herterojunctions. However, the property modulation of 2D semiconductor heterojunctions remains chanlleging within such thin layers. Herein, we proposed a general strategy towards the surface functionlization of 2D semiconductor heterojunctions simply by two-step atomic layer deposition (ALD) process with following post-annealing. TiO2-WO3 heterojunction was taken as a typical case in this work and its electrochemical properties were significantly improved via the proposed strategy. This strategy may open a new pathway for facile functionalization of 2D nanomaterials for the energy conversion and storage devices.
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Mi, Yi Lin. « Spin Diffusion in the Finite Magnetic Heterojunction ». Key Engineering Materials 727 (janvier 2017) : 410–14. http://dx.doi.org/10.4028/www.scientific.net/kem.727.410.

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Spin diffusion in the finite magnetic heterojunction was explored considering the spin dependent conductivity. In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. The difference results in the spin dependent conductivity. The calculations show that the spin injection efficiency is dependent on the spin dependent conductivity and the size of the layers. The spin dependent conductivity has great influence on the spin injection efficiency in the finite magnetic heterojunction, when the spin polarization of the organic semiconductors is moderate.
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Ni, Junhao, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan et Shaoqing Xiao. « Status and prospects of Ohmic contacts on two-dimensional semiconductors ». Nanotechnology 33, no 6 (18 novembre 2021) : 062005. http://dx.doi.org/10.1088/1361-6528/ac2fe1.

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Abstract In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.
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Yu, Edward T. « Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures ». MRS Bulletin 22, no 8 (août 1997) : 22–26. http://dx.doi.org/10.1557/s0883769400033765.

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As characteristic dimensions in semiconductor devices continue to shrink and as advanced heterostructure devices increase in prominence, the ability to characterize structure and electronic properties in semiconductor materials and device structures at the atomic to nanometer scales has come to be of outstanding and immediate importance. Phenomena such as atomic-scale roughness of heterojunction interfaces, compositional ordering in semiconductor alloys, discreteness and spatial distribution of dopant atoms, and formation of self-assembled nanoscale structures can exert a profound influence on material properties and device behavior. The relationships between atomic-scale structure, epitaxial growth or processing conditions, and ultimately material properties and device behavior must be understood for realization and effective optimization of a wide range of semiconductor heterostructure and nanoscale devices.Cross-sectional scanning tunneling microscopy (STM) has emerged as a unique and powerful tool in the study of atomic-scale properties in III-V compound semiconductor heterostructures and of nanometer-scale structure and electronic properties in Si micro-electronic devices, offering unique capabilities for characterization that in conjunction with a variety of other, complementary experimental methods are providing new and important insights into material and device properties at the atomic to nanometer scale. In this article, we describe the basic experimental techniques involved in cross-sectional STM and give a few representative applications from our work that illustrate the ability, using cross-sectional STM in conjunction with other experimental techniques, to probe atomic-scale features in the structure of semiconductor heterojunctions and to correlate these features with epitaxial-growth conditions and device behavior.
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Kelly, M. J. « A second decade of semiconductor heterojunction devices ». Microelectronics Journal 24, no 8 (décembre 1993) : 723–39. http://dx.doi.org/10.1016/0026-2692(93)90073-n.

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Rashid, Muhammad Haroon, Ants Koel et Toomas Rang. « Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes ». Materials Science Forum 1004 (juillet 2020) : 490–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.490.

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During the last decade, silicon carbide (SiC) and its heterostructures with other semiconductors have gained a significant importance for wide range of electronics applications. These structures are highly suitable for high frequency and high power applications in extremely high temperature environments. SiC exists in more than 200 different polycrystalline forms, called polytypes. Among these 200 types, the most prominent polytypes with exceptional physical and electrical attributes are 3C-SiC, 4H-SiC and 6H-SiC. Heterostructures of these SiC polytypes with other conventional semiconductors (like Si, Ge) can give rise to interesting electronic characteristics. In this article, Germanium (Ge) has been used to make heterostructures with 3C-SiC and 4H-SiC using a novel technique called diffusion welding. Microscale and nanoscale simulations of nn-heterojunction of Ge/3C-SiC and Ge/4H-SiC have been done. Microscale devices have been simulated with a commercially available semiconductor device simulator tool called Silvaco TCAD. Whereas nanoscale devices have been simulated with QuantumWise Atomistix Toolkit (ATK) software package. Current-voltage (IV) curves of all simulated devices have been calculated and compared. In nanoscale device, the effects of defects on IV-characteristics due to non-ideal bonding (lattice misplacement) at heterojunction interface have been analyzed. Our simulation results reveal that the proposed heterostructure devices with diffusion welding of wafers are theoretically possible. These simulations are the preparations of our near future physical experiments targeted to fabricate SiC based heterostructure devices using diffusion bonding technique.
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Thèses sur le sujet "Heterojunction semiconductor devices"

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Tayarani-Najaran, M. H. « Traps at the silicon/silicon-dioxide heterojunction ». Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278879.

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Roberts, Victoria. « The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications ». Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.

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Quinones, Eduardo Jose. « Heterojunction MOSFET devices using column IV alloys grown by UHVCVD / ». Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Liu, Mingzhen. « Planar heterojunction perovskite solar cells via vapour deposition and solution processing ». Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:89a275a8-5ec8-442c-a114-246a44dbd570.

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Hybrid organic-inorganic solar photovoltaic (PV) cells capable of directly converting sunlight to electricity have attracted much attention in recent years. Despite evident technological advancements in the PV industry, the widespread commercialisation of solar cells is still being mired by their low conversion efficiencies and high cost per Watt. Perovskites are an emerging class of semiconductors providing a low-cost alternative to silicon-based photovoltaic cells, which currently dominate the market. This thesis develops a series of studies on “all-solid state perovskite solar cells” fabricated via vapour deposition which is an industrially-accessible technique, to achieve planar heterojunction architectures and efficient PV devices. Chapter 2 presents a general outlook on the operating principles of solar cells, delving deeper into the specific operational mechanism of perovskite solar cells. It also explores the usual methods employed in the fabrication of perovskite thin films. Chapter 3 describes the experimental procedures followed during the fabrication of the individual components constituting the device from the synthesis of the precursors to the construction of the functioning perovskite PV devices. Chapter 4 demonstrates pioneering work involving the dual-source vapour deposition (DSVD) of planar heterojunction perovskite solar cells which generated remarkable power conversion efficiency values surpassing 15%. These significant results pave the way for the mass-production of perovskite PVs. To further expand the range of feasible vapour deposition techniques, a two-layer sequential vapour deposition (SVD) technique is explored in Chapter 5. This chapter focusses on identifying the factors affecting the fundamental properties of the vapour-deposited films. Findings provide an improved understanding of the effects of precursor compositions and annealing conditions on the films. Chapter 5 concludes with a comparison between SVD and DSVD fabricated films, highlighting the benefits of each vapour deposition technique. Furthermore, hysteretic effects are analysed in Chapter 6 for the perovskite PV devices fabricated based on different structural configurations. An interesting discovery involving the temporary functioning of compact layer-free perovskite PV devices suggests the presence of a built-in-field responsible for the hysteresis of the cells. The observations made in this chapter yield a new understanding of the functionality of individual cell layers. Combining the advantages of the optimum vapour deposition technique established in Chapter 4 and Chapter 5, with the enhanced understanding of perovskite PV cell operational mechanism acquired from Chapter 6, an ongoing study on an “all-perovskite” tandem solar cell is introduced in Chapter 7. This demonstration of the “all-perovskite” tandem devices confirms the versatility of perovskites for a broader range of PV applications.
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Kinder, Erich W. « Fabrication of All-Inorganic Optoelectronic Devices Using Matrix Encapsulation of Nanocrystal Arrays ». Bowling Green State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1339719904.

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Nakazawa, Satoshi. « Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices ». Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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Hey, Andrew Stuart. « Series interconnects and charge extraction interfaces for hybrid solar cells ». Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:f19e44a8-e394-4859-9649-734116bc22b8.

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This thesis investigates novel hole extraction interfaces and series interconnects for applications in organic photovoltaics, specifically in single junction solid-state dye-sensitized solar cells (DSSCs) and tandem DSSC/polymer bulk heterojunction solar cells. Improvements in hole extraction and device performance by using materials compatible with scalable deposition methods are presented, including tungsten- and molybdenum-disulphide (WS2 and MoS2), and p-type doped spiro-OMeTAD (2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)9,9'-spirobifluorene) nanoparticle dispersions. WS2 and MoS2 hole extraction layers increase averaged short circuit currents by 20% and 16% respectively, and power conversion efficiencies by 19% and 14% respectively when compared with control devices. Similarly, doped spiro-OMeTAD nano-particle layers improved short circuit current densities by 32% and efficiencies by 9%. Tandem device interconnects using these novel hole extraction formats have been fabricated, but although devices did exhibit rectification, overall performance was poor. Possible reasons for their limited success have been analysed. Dye-sensitized solar mini-modules are also reported. In order to assure the scalability of DSSC technology, these larger area devices were constructed using doctor blade coating to deposit the hole transporter material. As well as achieving a respectable maximum power conversion efficiency of 2.6%, it has also been shown that the extent to which hole transporter infiltrates the mesoporous photoanode of these devices may be tuned by altering substrate temperature during deposition. It was found that an optimal coating temperature of 70 degrees C produced the best efficiency, with a corresponding pore-filling fraction of 41%.
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Ganbold, Tamiraa. « Development of quantum well structures for multi band photon detection ». Doctoral thesis, Università degli studi di Trieste, 2015. http://hdl.handle.net/10077/11801.

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2013/2014
La ricerca qui presentata è incentrata sullo sviluppo di tecnologie innovative per la produzione di rivelatori di posizione di fasci fotonici veloci (pBPM) per applicazioni in luce di sincrotrone (SR) e laser a elettroni liberi (FEL). Nel nostro lavoro abbiamo proposto un rilevatore in-situche ha dimostrato velocità di risposta ed omogeneità sia per scopi di diagnostica che di calibrazione. I dispositivi sono basati su pozzi quantici (QW) dimateriali semiconduttori InGaAs / InAlAs,che offrono diversi vantaggi grazie alla loro gap di banda diretta e a bassa energia, e all’alta mobilità elettronica a temperatura ambiente. I QW metamorfici diIn0.75Ga0.25As/In0.75Al0.25As contenenti un gas di elettroni bidimensionali (2DEG) sono staticresciuti tramite epitassia a faci molecolari (MBE). Tali materiali presentano alcune differenze notevoli rispetto al diamante, che è il materiale utilizzato per i rivelatori commerciali allo stato dell’arte. Innanzitutto, i costi di produzione e di fabbricazione sono molto più bassi. Poi, il coefficiente di assorbimento è molto superiore al diamante su una vasta gamma di energie di raggi X, il che li rende ampiamente complementari in possibili applicazioni. Inoltre, utilizzando semiconduttori composti si possono fabbricare dispositivi con diverse combinazioni di materiali per la barriera ed il QW;ciòha permesso di ridurre la gap di energia fino a 0.6 eV. La disponibilità e la ripetibilità di fabbricazione dei dispositivi è migliore rispetto a quelle del diamante. Quattro configurazioni di dispositivi a QW pixelati sono stati testati con diverse fonti di luce, come radiazione di sincrotrone, tubo a raggi X convenzionali e laser ultra veloce nel vicinoUV. In questa tesi, dopo aver introdotto i dispositivi a QW per utilizzo comepBPM, saranno riportati e discussii risultati più importanti ottenuti. Tali risultati indicano che questi rivelatori rispondono con tempi di 100-ps a impulsi laser ultraveloci, cioè un fattore 6 più velocirispetto a rivelatori a semiconduttori commerciali allo stato dell’arte. La precisione raggiunta nella stima della posizione del fascio fotonico è di 800nm, da confrontare con i 150nm di rivelatori a diamante commerciali. Inoltre, i nostri rivelatori di fotoni a QW lavorano a tensioni molto inferiori rispetto aipBPMs esistenti.Infine, test con raggi X da radiazione di sincrotrone mostrano come questi dispositivi presentano elevate efficienze di raccolta di carica, che possono essere imputabili all'effetto di moltiplicazione di carica del gas di elettroni 2D all'interno del pozzo. Tutti questi vantaggi rispetto ai rivelatori esistenti basati sul diamante, rendono i nostri dispositivi potenzialmente molto attrattivi come alternativa a quelli commerciali.
XXVII Ciclo
1984
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Lim, Sang-Hyun. « Characterization of p-type wide band gap transparent oxide for heterojunction devices ». Amherst, Mass. : University of Massachusetts Amherst, 2009. http://scholarworks.umass.edu/dissertations/AAI3359903/.

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Fan, Qian. « GaN heterojunction FET device Fabrication, Characterization and Modeling ». VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/35.

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This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, especially concerning the reliability and stability of the device. In order to improve the device performance, we first optimized the growth and fabrication procedures for the conventional AlGaN barrier HFET, on which high carrier mobility and sheet density were achieved. Second, the AlInN barrier HFET was successfully processed, with which we obtained improved I-V characteristics compared with conventional structure. The lattice-matched AlInN barrier is beneficial in the removal of strain, which leads to better carrier transport characteristics. Furthermore, new device structures have been examined, including recess-gate HFET with n+ GaN cap layer and gate-on-insulator HFET, among which the insertion of gate dielectrics helps to leverage both DC and microwave performances. In order to depict the microwave behavior of the HFET, small signal modeling approaches were used to extract the extrinsic and intrinsic parameters of the device. An 18-element equivalent circuit model for GaN HFET has been proposed, from which various extraction methods have been tested. Combining the advantages from the cold-FET measurements and hot-FET optimizations, a hybrid extraction method has been developed, in which the parasitic capacitances were attained from the cold pinch-off measurements while the rest of the parameters from the optimization routine. Small simulation error can be achieved by this method over various bias conditions, demonstrating its capability for the circuit level design applications for GaN HFET. Device physics modeling, on the other hand, can help us to reveal the underlying physics for the device to operate. With the development of quantum drift-diffusion modeling, the self-consistent solution to the Schrödinger-Poisson equations and carrier transport equations were fulfilled. Lots of useful information such as band diagram, potential profile, and carrier distribution can be retrieved. The calculated results were validated with experiments, especially on the AlInN layer structures after considering the influence from the parasitic Ga-rich layer on top of the spacer. Two dimensional cross-section simulation shows that the peak of electrical field locates at the gate edge towards the drain, and of different kinds of structures the device with gate field-plate was found to efficiently reduce the possibility of breakdown failure.
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Livres sur le sujet "Heterojunction semiconductor devices"

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V, Morgan D., Williams Robin H et Institution of Electrical Engineers, dir. Physics and technology of heterojunction devices. London, U.K : P. Peregrinus Ltd. on behalf of the Institution of Electrical Engineers, 1991.

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Zeghbroeck, Bart V. Van. Principles of Semiconductor Devices and Heterojunctions. Prentice Hall, 2008.

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Zhou, Ye. Optoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.

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Optoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.

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Zhou, Ye. Optoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.

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Heterojunction band discontinuities : Physics and device applications. Amsterdam : North-Holland, 1987.

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Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Sous la direction de A. V. Narlikar et Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.
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Wang, Binan. Device characterization and analog circuit design for heterojunction FETs. 1993.

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Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.

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Chapitres de livres sur le sujet "Heterojunction semiconductor devices"

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Yngvesson, Sigfrid. « HFETs — Heterojunction Field Effect Transistors ». Dans Microwave Semiconductor Devices, 363–415. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3970-4_11.

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Paletti, Paolo, et Alan Seabaugh. « Heterojunction Tunnel Field-Effect Transistors ». Dans Springer Handbook of Semiconductor Devices, 867–903. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_24.

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Hazra, Purnima, et S. Jit. « Electrical Characteristics of Si/ZnO Core–Shell Nanowire Heterojunction Diode ». Dans Physics of Semiconductor Devices, 673–75. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_173.

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Somvanshi, Divya, et S. Jit. « Electrical Characterization of n-ZnO Nanowires/p-Si Based Heterojunction Diodes ». Dans Physics of Semiconductor Devices, 589–92. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_148.

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Das, S., S. Jana, D. De, U. Gangopadhyay, S. Garain, S. Ray, A. Mondal et P. Ghosh. « A Novel Room Temperature Ammonia Gas Sensor Based on Diamond-Like Nanocomposite/c-Silicon Heterojunction ». Dans Physics of Semiconductor Devices, 479–82. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_120.

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Pigorsch, Carsten, Roland Stenzel et Wilfried Klix. « Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices ». Dans Simulation of Semiconductor Devices and Processes, 230–33. Vienna : Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_55.

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Chakraborty, Partha S., et John D. Cressler. « Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors ». Dans Hot Carrier Degradation in Semiconductor Devices, 371–98. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08994-2_13.

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Halder, Nripendra N., Sanjay Kumar Jana, Pranab Biswas, D. Biswas et P. Banerji. « Fabrication of n-ZnO/p-GaAs Heterojunction and Prediction of Its Luminescence Based on Photoluminescence Study ». Dans Physics of Semiconductor Devices, 815–18. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_210.

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Wei, C. J., H. C. Chung, Y. A. Tkachenko et J. C. M. Hwang. « Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors ». Dans Simulation of Semiconductor Devices and Processes, 298–301. Vienna : Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_72.

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Herzel, Frank, et Bernd Heinemann. « A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors ». Dans Simulation of Semiconductor Devices and Processes, 98–101. Vienna : Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_23.

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Actes de conférences sur le sujet "Heterojunction semiconductor devices"

1

Rastogi, Shivam, Kurunthu Dharmalingam, Monica Katiyar et Ashish Garg. « Understanding degradation mechanism of bulk heterojunction organic photovoltaic devices ». Dans 16th International Workshop on Physics of Semiconductor Devices, sous la direction de Monica Katiyar, B. Mazhari et Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.927416.

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Yakovlev, Yu P., K. D. Moiseev, M. P. Mikhailova et O. G. Ershov. « Tunnel-Injection Laser Based on Type II Broken-Gap p-GaInAsSb/p-InAs Single Heterojunction ». Dans Semiconductor Lasers : Advanced Devices and Applications. Washington, D.C. : Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.mb.5.

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We present a new physical approach to design of III-V middle-infrared diode lasers which can lead to increasing operating temperature of InAs-based lasers. Main pecularity of proposed method is using interface radiative recombination of spatially-separated carriers in type II broken-gap p-p heterojunctions (HJs). Lattice-machted nondoped and doped GaIn0.17As0.22Sb layers with high quality interface were grown on p-InAs (100). It was established that GaIn0.17As0.22Sb/InAs HJ is type II with broken-gap alignment.
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Mukherjee, C., et C. K. Maiti. « Characterization of traps in SiGe:C channel heterojunction PMOSFETs ». Dans 16th International Workshop on Physics of Semiconductor Devices, sous la direction de Monica Katiyar, B. Mazhari et Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.924516.

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Patel, Kamlesh, O. S. Panwar, Atul Bisht, Sreekumar C., Sushil Kumar et C. M. S. Rauthan. « Simulation studies on heterojunction and HIT solar cells ». Dans 16th International Workshop on Physics of Semiconductor Devices, sous la direction de Monica Katiyar, B. Mazhari et Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.927395.

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Mawby, P. A., A. Perez-Tomas, M. R. Jennings, M. Davis, J. A. Covington, V. Shah et T. Grasby. « Molecular beam epitaxy Si/4H-SiC heterojunction diodes ». Dans 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472633.

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Capasso, Federico. « Band-gap engineering : from physics to optoelectronic functional devices ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.ws2.

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Band-gap engineering is a new powerful technique to design heterojunction devices. Using the rules of band-gap engineering new band diagrams with nearly arbitrary and continuous band gap variations can be constructed.1,2 This, along with the present capabilities of MBE and MOCVD growth techniques, has led to a new class of optoelectronic and electron devices and superlattice materials. These include among others multilayer avalanche photodiodes, staircase solid-state photomultipliers, phototransistors with graded gap base, and pseudoquaternary semiconductors. In addition, heterojunction band discontinuities can be artificially tuned using doping interface dipoles. This new technique has tremendous potential for novel semiconductor devices.3 Finally recent results on a new class of high detectivity, high gain, low voltage superlattice photoconductors (effective mass filters) are discussed. These devices are based on a newly discovered quantum-type photoconductivity. The high photoconductive gain is caused by the large difference between the tunneling rates of electrons and holes in a superlattice (effective mass filtering).
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Huang, Robin K., Rajeev J. Ram, Michael J. Manfra, Michael K. Connors, Leo J. Missaggia et George W. Turner. « Efficient infrared-to-electrical conversion with semiconductor heterojunction thermophotovoltaic devices ». Dans 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628277.

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Dujavova-Laurencikova, A., I. Novotny, J. Kovac, P. Elias, S. Hasenohrl et J. Novak. « GaP/ZnO nanowires with a radial pn heterojunction ». Dans 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2012. http://dx.doi.org/10.1109/asdam.2012.6418586.

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Chung, C., et F. Jain. « Two-dimensional modal analysis of blue-green lasers using ZnSe based p-n and metal-insulator-semiconductor (MIS) heterostructures ». Dans Compact Blue-Green Lasers. Washington, D.C. : Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.the4.

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The wide energy gap II-VI compounds semiconductors, such as ZnSe, ZnS, MnSe, CdSe, and their ternary and quaternary alloys, are particularly suitable for the realization of short wavelength optoelectronic devices. These materials have been found to exhibit excellent luminescent properties as demonstrated by photoluminescent spectra [1] and the successful operation of photopumped lasers [2]. Recently, Haase et al[3] reported p-n heterojunction injection laser operating at cryogenic temperatures. Currently, several research groups are investigating p-type doping of ZnSe using MBE, MOCVD and CBE growth techniques. However, compensation at high nitrogen level (>1018 cm-3) still remains a problem[4]. While the effort in optimizing p-n heterojunctions to obtain room temperature lasers is being pursued intensely, an alternate approach is the use of MIS structures to obtain injection luminescence[5,6]. This paper discusses modal analysis of p-n double heterojunction and MIS laser heterostructures. In particular, ZnSe-ZnSSe, ZnSe-ZnCdSe structures are analyzed. Numerical computations of field intensities, confinement factors r and the threshold current densities JTH are presented. Experimental data of luminescence spectra in Au-SiO2-ZnSe MIS devices is also presented.
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NISHI, Kazuhisa, Hideaki OHYAMA, Toshiji SUZUKI, Tsuneo MITSUYU et Takio TOMIMASU. « Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron Laser ». Dans 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.c-3-5.

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