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Littérature scientifique sur le sujet « Heteroepitaxial Growth »

Auteur : Grafiati

Publié le 9 mars 2023

Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "Heteroepitaxial Growth"

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Oh, Hongseok. « Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices ». Ceramist 25, n^o 4 (31 décembre 2022) : 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.

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Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or mechanical flexibility. In this paper, growth, structural properties, and optoelectronic device applications of semiconductor nanostructures or thin films which are heteroepitaxially grown on large-scale 2D nanomaterials are reviewed.

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Kitabatake, Makoto. « SiC/Si heteroepitaxial growth ». Thin Solid Films 369, n^o 1-2 (juillet 2000) : 257–64. http://dx.doi.org/10.1016/s0040-6090(00)00819-1.

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Grein, C. H., J. P. Faurie, V. Bousquet, E. Tournié, R. Benedek et T. de la Rubia. « Simulations of heteroepitaxial growth ». Journal of Crystal Growth 178, n^o 3 (juillet 1997) : 258–67. http://dx.doi.org/10.1016/s0022-0248(96)01193-1.

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Sawabe, Atsuhito, Hideo Fukuda et Kazuhiro Suzuki. « Heteroepitaxial growth of diamond ». Electronics and Communications in Japan (Part II : Electronics) 81, n^o 7 (juillet 1998) : 28–37. http://dx.doi.org/10.1002/(sici)1520-6432(199807)81:7<28 ::aid-ecjb4>3.0.co;2-z.

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Burrows, Christopher W., Thomas P. A. Hase et Gavin R. Bell. « Hybrid Heteroepitaxial Growth Mode ». physica status solidi (a) 216, n^o 8 (10 octobre 2018) : 1800600. http://dx.doi.org/10.1002/pssa.201800600.

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Wasa, Kiyotaka, Isaku Kanno et Takaaki Suzuki. « Structure and Electromechanical Properties of Quenched PMN-PT Single Crystal Thin Films ». Advances in Science and Technology 45 (octobre 2006) : 1212–17. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1212.

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Thin films of single c-domain/single crystal (1-x)Pb(Mg1/3Nb2/3)O3－xPbTiO3 (PMN-PT), x≅0.33 near a morphotropic boundary (MPB) composition, were heteroepitaxially grown on (110)SRO/(001)Pt/(001)MgO substrates by magnetron sputtering. The heteroepitaxial growth was achieved by rf-magneron sputtering at the substrate temperature of 600oC. After sputtering deposition, the sputtered films were quenched from 600oC to room temperature in atmospheric air. The quenching enhanced the heteroepitaxial growth of the stress reduced single c-domain/single crystal PMN-PT thin films. Their electromechanical coupling factor kt measured by a resonance spectrum method was 45% at resonant frequency of 1.3GHz with phase velocity of 5500 to 6000m/s for the film thickness of 2.3μm. The d33 and d31 were 194pC/N and –104pC/N, respectively. The observed kt , d33 ,and d31were almost the same to the bulk single crystal values.

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Lebedev, Vadim, Jan Engels, Jan Kustermann, Jürgen Weippert, Volker Cimalla, Lutz Kirste, Christian Giese et al. « Growth defects in heteroepitaxial diamond ». Journal of Applied Physics 129, n^o 16 (28 avril 2021) : 165301. http://dx.doi.org/10.1063/5.0045644.

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Yoshida, S., E. Sakuma, H. Okumura, S. Misawa et K. Endo. « Heteroepitaxial growth of SiC polytypes ». Journal of Applied Physics 62, n^o 1 (juillet 1987) : 303–5. http://dx.doi.org/10.1063/1.339147.

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Flynn, C. P., et J. A. Eades. « Structural variants in heteroepitaxial growth ». Thin Solid Films 389, n^o 1-2 (juin 2001) : 116–37. http://dx.doi.org/10.1016/s0040-6090(01)00768-4.

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Tersoff, J. « Kinetic effects in heteroepitaxial growth ». Applied Surface Science 188, n^o 1-2 (mars 2002) : 1–3. http://dx.doi.org/10.1016/s0169-4332(01)00700-0.

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Thèses sur le sujet "Heteroepitaxial Growth"

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Rätsch, Christian. « Effects of strain on heteroepitaxial growth dynamics ». Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/30647.

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Meng, Shuang. « Heteroepitaxial growth of gallium selenium compounds on silicon / ». Thesis, Connect to this title online ; UW restricted, 2000. http://hdl.handle.net/1773/9749.

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BERGAMASCHINI, ROBERTO. « Continuum models of heteroepitaxial growth on patterned substrates ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40087.

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The continuous advancing of semiconductor technologies in micro-electronics, optics, energy production, ..., constantly demands for an improvement in the choice of suitable materials. Heteroepitaxial systems represents a class of materials that has been largely exploited to achieve such enhancements thanks to the possibility to combine properties of the different material with a large degree of customization and tuning. Many different heteroepitaxial systems are possible, from small nanostruc- tures (e.g. quantum dots, islands), to microscopic crystals or films. Generally such structures form spontaneously during the growth in consequence of a self- assembly process. If the growth is operated on flat undifferentiated substrate the self-assembly process can be controlled only on a rather limited extent, by properly tuning the growth conditions responsible for the material rearrangement during the growth. The possibility to achieve a major control on the formation of the different structures along the surface is highly desirable. Substrate patterning techniques strongly evolved in the last decade allowing for a better control of the system evolution through the introduction of preferential sites where the growing material can accumulate and evolve in a more controllable way. With this respect, the understanding of the mechanisms underlying the specific growth modes observed experimentally is crucial to proficiently define the optimal growth conditions for the desired behavior. Growth models for heteroepitaxial systems are then widely used on very different scales. Due to the large variability of the systems, different models need to be in general considered for the several typologies of materials and growth methods. In this Thesis we essentially focus our attention on two different physical systems: the Stranski-Krastanow growth of three-dimensional islands on pit- patterned substrates, and the growth of 3D crystals on substrate patterned with pillar structures, on the micrometer size scale. In order to define the appropriate way of modeling, the characteristic size and time scale of the systems should be taken into account. The typical periodicity of patterns used for island growth in Stranski-Krastanow pit is larger than 100 nm and the grown islands can in general become very large, including several milions of atoms. Deposition of few atomic layers are usually considered but the growth rate is typically slow so that the growth process lasts for minutes. The growth on pillar patterns is performed on even larger size scale, with typical dimensions of μm; also, several μm of material are deposited so that the growth can even require hours. Evidently, an atomistic description is not feasible so that a coarsened scale must be considered. Continuum models are hence the best choice for the description of these kind of systems, as they allow to efficiently describe the overall profile evolution for long time scales, including most of the physics resulting from the underlying atomic events in an average way. The problem of Stranski-Krastanow island growth can be mainly defined on the basis of thermodynamic arguments as it is typically obtained by slow Molecular Beam Epitaxy at temperature high enough to guarantee an effective diffusion dynamics of the atoms along the surface. Such conditions can be considered close enough to equilibrium so that the main driving force for the system evolution is the free energy minimization, although, as largely discussed in this work, thermodynamics applies only to the surface region. Thermodynamic- driven profile evolution has been object of large interest since the seminal work by W.W. Mullins, more than fifty years ago. Several models accounting for the effects of surface energy and profile faceting have been developed. Strain effects have also been successfully included, offering a deeper insight on the islanding mechanisms in connection with the raise of morphological instability of a flat film. Several studies have been devoted also to the characterization of the role of substrate patterning. However, most of these models were based on a single component picture loosing a crucial element that proved to play an essential role in the evolution of the growth process: intermixing between the deposited material and the substrate one. Some attempts to account for this effect, accounting for the evolution of the composition profile have been proposed. In 2003, J. Tersoff developed a successful description of the coupled evolution of profile and composition, based on the restriction of intermixing within a small layer around the surface, that proved to be particularly well suited to capture the main physics of Stranski-Krastanow heteroepitaxial growth on flat substrate. In this Thesis we discuss of an extension of the original Tersoff model to the characterization of the growth on pit-patterned substrate, developed in direct collaboration with J. Tersoff himself. Ge/Si system is considered. In particular, a realistic description of the surface dynamics for the adatoms of both components, accounting for their different mobilities and its dependence on the local environment, is introduced into the model derivation. Simulations are then implemented for an initial pit-patterned geometry of the substrate and the evolution is investigated in comparison with the experimental phenomenology. An effect of anomalous smoothing of the substrate profile induced in the initial stages of the growth and recently observed in experiments is analyzed in details and explained on the basis of simulation results. Islands formation is also inspected and their morphological evolution is considered. Tersoff approach was proved to be effective to capture the main physical as- pects related to the intermixing dynamics, crucial for the understanding of many aspects of heteroepitaxy. Some technical limitations however reduce the possibilities to extend it to complex system geometries, in particular three-dimensional systems. In order to allow for a future study of more general problems, during this Thesis work an original phase-field model for heteroepitaxial growth has been developed, in collaboration with A. Voigt and his group. Phase-field technique was found to be particularly well suited for the analysis of surface processes, offering an efficient way to represent the profile evolution of a free surface upon surface diffusion, eventually including also strain effects. Multiple component systems are also considered in phase-field models for alloy solidification. An exhaustive model for the heteroepitaxial processes, including both surface dynamics and intermixing effects, is not yet available in literature. The purpose of this part of the Thesis then consists in the definition of a suitable model accounting for such peculiar features of Stranski-Krastanow heteroepitaxial systems. A proof of concepts is provided by example simulations, testing the effects of the various contribution defining the problem. The modeling of the growth processes leading to the self-assembly of crystals on pillar patterned substrates is much different as the growth in this case is obtained in conditions of high growth rates and relatively low temperature, driving the system well far from equilibrium, in conditions such that the thermodynamic driving forces are frustrated by kinetic effects. In this case, a different approach is needed, properly accounting for the different kinetics at the surface. In particular, a modeling for such conditions can be defined by exploiting the local mechanisms of atomic exchange between the grow flux and the advancing crystal front by means of suitable rate equations. The dynamics on the different facets of crystals is then characterized in terms of an orientation dependent growth rate, mainly determined by the impinging flux. In this Thesis a model including both intrinsic different growth properties and local deposition fluxes is defined and used to interpret the growth of micrometric 3D crystals on a suitable pattern of pillars, obtained in experiments for both Ge/Si and GaAs/Si pillars. Simulation results allow to inspect the key features of the observed growth modality, showing the crucial role of frustrated diffusion and mutual flux shielding between neighboring crystals. A close comparison with the experiments is reported.

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Mao, Jun. « Heteroepitaxial growth on silicon surface : a Monte Carlo study ». Thesis, University of Leicester, 1997. http://hdl.handle.net/2381/30582.

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The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial films on Si substrates. Two prototype systems were chosen for this research: first is Ge/Si(001), where the two species have similar chemical properties; second is CaF2/Si(111), in which the ionic epitaxial film and substrate have similar crystal structures. Both are strained heteroepitaxial films because of their lattice mismatch. These systems have attracted much attention largely due to various promising applications in micro-electronics and fundamental interest in the basic studies of heteroepitaxy. The Metropolis Monte Carlo method is used for this research. For Ge/Si, because of short range interaction forces between atoms, the CELL method is developed and applied to this research. Results have shown that the such a method is fast, efficient and is easily adapted to study all other systems with short range interaction forces; the other method, called the BIG JUMP, is also developed. The results have shown that the BIG JUMP method is particularly useful in generating equilibrium or metastable configurations. The initial stage of MBE growth of Ge on Si(001) was studied using MC method combined with CELL method, or both CELL and BIG JUMP methods. It was found that at least an (8 x 8 x 8) computational cell with six layers that were allowed to move was needed for the simulations. 2% acceptance of MC moves was found to lead a quicker energy minimisation process. This result implies that the energy minimisation process involves big jumps of atoms, corresponding to atom diffusion on a real surface. The energy map of a Ge atom on Si(001)(2 x 1) was calculated and compared with ab initio calculation. An exchange mechanism of a Ge adatom with a Si atom of the substrate was found. This mechanism can be used in understanding the ordered structure observed during the initial stage of MBE growth of Ge on a Si(001) substrate surface.

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Wallace, Julia M. « Growth and characterisation of heteroepitaxial ZnSe and ZnSxSe1-x ». Thesis, Heriot-Watt University, 1992. http://hdl.handle.net/10399/806.

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Hatfield, Stuart Andrew. « Heteroepitaxial growth of MnSb on III-V semiconductor substrates ». Thesis, University of Warwick, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444834.

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吳誼暉 et Yee-fai Ng. « Heteroepitaxial growth of InN on GaN by molecular beam epitaxy ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29797846.

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Ng, Yee-fai. « Heteroepitaxial growth of InN on GaN by molecular beam epitaxy / ». Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25212175.

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Xu, Zhehan. « Direct Heteroepitaxial Growth of III-Vs on Si by HVPE ». Thesis, KTH, Tillämpad fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-265624.

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McIntyre, Paul Cameron. « Heteroepitaxial growth of chemically derived Ba₂YCu₃O₇âx thin films ». Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12741.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993.
Includes bibliographical references (leaves 168-177).
by Paul Cameron McIntyre.
Sc.D.

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Livres sur le sujet "Heteroepitaxial Growth"

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F, Chisholm Matthew, dir. Mechanisms of heteroepitaxial growth : Symposium held April 27-30, 1992, San Francisco, California, U.S.A. Pittsburgh, Pa : Materials Research Society, 1992.

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Diamond Films : Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth. Elsevier Science, 2005.

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Kobashi, Koji. Diamond Films : Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth. Elsevier Science & Technology Books, 2010.

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Kobashi, Koji. Diamond Films : Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth. Elsevier Science, 2005.

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National Aeronautics and Space Administration (NASA) Staff. Heteroepitaxial Growth of 3-5 Semiconductor Compounds by Metal-Organic Chemical Vapor Deposition for Device Applications. Independently Published, 2018.

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(Editor), W. K. Liu, et M. B. Santos (Editor), dir. Thin Films : Heteroepitaxial Systmes (Series on Directions in Condensed Matter Physics, Vol 15). World Scientific Publishing Company, 1999.

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Huber, Daniel Anthony. The investigation of ZnSe buffer layers for reduction of defects in heteroepitaxial growth of GaAs on silicon. 1992.

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Heteroepitaxial growth of III-V semiconductor compounds by metal-organic chemical vapor deposition for device applications : Final report. Greensboro, NC : North Carolina Agricultural and Technical State University, Dept. of Electrical Engineering, 1988.

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Chisholm, Matthew F., et Robert Hull. Mechanisms of Heteroepitaxial Growth : Symposium Held April 27-30, 1992, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1992.

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(Editor), Eric A. Stach, Eric A. Chason (Editor), Robert Hull (Editor) et Samuel D. Bader (Editor), dir. Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly : Symposium held November 26-29, 2001, Boston Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings). Materials Research Society, 2002.

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Chapitres de livres sur le sujet "Heteroepitaxial Growth"

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Schreck, M. « Heteroepitaxial Growth ». Dans CVD Diamond for Electronic Devices and Sensors, 125–61. Chichester, UK : John Wiley & Sons, Ltd, 2009. http://dx.doi.org/10.1002/9780470740392.ch6.

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Henzler, M. « Misfit Accommodation During Heteroepitaxial Growth ». Dans Semiconductor Interfaces at the Sub-Nanometer Scale, 173–80. Dordrecht : Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_18.

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Stenin, S. I. « General Criteria for Dislocation Structures in Heteroepitaxial Films ». Dans Growth of Crystals, 55–66. Boston, MA : Springer US, 1987. http://dx.doi.org/10.1007/978-1-4615-7122-3_6.

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Schindler, A. C., D. D. Vvedensky, M. F. Gyure, G. D. Simms, R. E. Caflisch et C. Connell. « Atomistic and Continuum Elastic Effects in Heteroepitaxial Systems ». Dans Atomistic Aspects of Epitaxial Growth, 337–53. Dordrecht : Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_26.

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Jeng, David G. K., H. S. Tuan, James E. Butler, Robert F. Salat et Glenn J. Fricano. « Local Heteroepitaxial Diamond Growth on (100) Silicon ». Dans Diamond and Diamond-like Films and Coatings, 627–34. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-5967-8_40.

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Ackaert, A., P. Demeester, I. Moerman et R. Baets. « Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE ». Dans Heterostructures on Silicon : One Step Further with Silicon, 93–99. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0913-7_12.

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Matsunami, Hiroyuki. « Heteroepitaxial Growth of SiC on Si and its Application ». Dans Heterostructures on Silicon : One Step Further with Silicon, 311–21. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0913-7_34.

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Neudeck, P. G., et J. A. Powell. « Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas ». Dans Silicon Carbide, 179–205. Berlin, Heidelberg : Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_8.

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Matus, L. G., et J. A. Powell. « Growth of β-SiC Heteroepitaxial Films on Vicinal (001) Si Substrates ». Dans Amorphous and Crystalline Silicon Carbide and Related Materials, 40–44. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_4.

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Nagasawa, H., et Y. Yamaguchi. « Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply ». Dans Springer Proceedings in Physics, 40–48. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84804-9_5.

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Actes de conférences sur le sujet "Heteroepitaxial Growth"

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Harvey, Steven P., Craig Perkins, Matthew Young, Helio Moutinho, Samual Wilson et Glenn Teeter. « Heteroepitaxial growth of CZTS ». Dans 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925396.

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SHIVAPRASAD, S. M. « ASPECTS OF HETEROEPITAXIAL GROWTH ». Dans Proceedings of the International Conference. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812704221_0004.

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Munoz-Yague, Antonio, et Chantal Fontaine. « Status Of Fluoride-Semiconductor Heteroepitaxial Growth ». Dans 1988 Semiconductor Symposium, sous la direction de Anupam Madhukar. SPIE, 1988. http://dx.doi.org/10.1117/12.947378.

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Guo, Qixin. « Heteroepitaxial growth and characterization of compound semiconductors ». Dans Asia Communications and Photonics Conference. Washington, D.C. : OSA, 2014. http://dx.doi.org/10.1364/acpc.2014.aw3j.1.

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Kuo, Shou-Yi, Fang-I. Lai, Wei-Chun Chen, Woei-Tyng Lin et Chien-Nan Hsiao. « Heteroepitaxial growth of InN by PA-MOMBE ». Dans 2011 IEEE 4th International Nanoelectronics Conference (INEC). IEEE, 2011. http://dx.doi.org/10.1109/inec.2011.5991699.

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Tewksbury, S. K., L. A. Hornak, H. Noriman et S. McGinnis. « GaAs Heteroepitaxial Growth on Submicron CMOS Silicon Substrates ». Dans Optical Computing. Washington, D.C. : Optica Publishing Group, 1993. http://dx.doi.org/10.1364/optcomp.1993.ofa.1.

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Maehashi, Kenzo, Shigehiko Hasegawa et Hisao Nakashima. « Charge Balanced Heteroepitaxial Growth of GaAs on Si ». Dans 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-ii-11.

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Lo, Y. H., et Z. H. Zhu. « Silicon Compliant Substrate for High-Quality Heteroepitaxial Growth ». Dans 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.d-4-1.

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Grym, J., D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrac, O. Pacherova et K. Piksova. « Strain accommodation within porous buffer layers in heteroepitaxial growth ». Dans 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2012. http://dx.doi.org/10.1109/asdam.2012.6418524.

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Farrow, Robin F. C. « Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides ». Dans O-E/LASE'86 Symp (January 1986, Los Angeles), sous la direction de Devindra K. Sadana et Michael I. Current. SPIE, 1986. http://dx.doi.org/10.1117/12.961208.

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Rapports d'organisations sur le sujet "Heteroepitaxial Growth"

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Markunas, R. J., R. A. Rudder, J. B. Posthill, R. E. Thomas et G. Hudson. Heteroepitaxial Diamond Growth. Fort Belvoir, VA : Defense Technical Information Center, septembre 1995. http://dx.doi.org/10.21236/ada298591.

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Markunas, R. J., R. A. Rudder, J. B. Posthill, R. E. Thomas et G. Hudson. Heteroepitaxial Diamond Growth. Fort Belvoir, VA : Defense Technical Information Center, septembre 1995. http://dx.doi.org/10.21236/ada298592.

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Wang, Wen I. Large Area Heteroepitaxial Growth Using Compliant Substrates. Fort Belvoir, VA : Defense Technical Information Center, juillet 2002. http://dx.doi.org/10.21236/ada403964.

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Kolagani, R., et S. Friedrich. Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition. Office of Scientific and Technical Information (OSTI), juin 2008. http://dx.doi.org/10.2172/945832.

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