Bibliographies thématiques / GeSbTe alloy

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Littérature scientifique sur le sujet « GeSbTe alloy »

Auteur : Grafiati
Publié le 9 mars 2023
Mis à jour le 19 juillet 2025

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Articles de revues sur le sujet "GeSbTe alloy"

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Tominaga, Junji. "An engineering model for high-speed switching in GeSbTe phase-change memory." Applied Physics Express 15, no. 2 (2022): 025505. http://dx.doi.org/10.35848/1882-0786/ac4a11.

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Abstract Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially the transition speed from amorphous to crystal should still be modified. In this work, we examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was clear that a uniaxial exchange between vacancies and Ge atoms plays a crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The va
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Rebora, Charles, Ruomeng Huang, Gabriela P. Kissling, et al. "Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy." Nanotechnology 30, no. 2 (2018): 025202. http://dx.doi.org/10.1088/1361-6528/aae6db.

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Liang-Cai, Wu, Liu Bo, Song Zhi-Tang, Feng Gao-Ming, Feng Song-Lin, and Chen Bomy. "Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy." Chinese Physics Letters 23, no. 9 (2006): 2557–59. http://dx.doi.org/10.1088/0256-307x/23/9/057.

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Chabli, A., C. Vergnaud, F. Bertin, et al. "Temperature dependence of structural and optical properties of GeSbTe alloy thin films." Journal of Magnetism and Magnetic Materials 249, no. 3 (2002): 509–12. http://dx.doi.org/10.1016/s0304-8853(02)00471-7.

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Wu, Liangcai, Xilin Zhou, Zhitang Song, et al. "197 Au irradiation study of phase-change memory cell with GeSbTe alloy." physica status solidi (a) 207, no. 10 (2010): 2395–98. http://dx.doi.org/10.1002/pssa.201026008.

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Abou El Kheir, Omar, and Marco Bernasconi. "High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories." Nanomaterials 11, no. 9 (2021): 2382. http://dx.doi.org/10.3390/nano11092382.

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Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge2Sb2Te5 compound along the GeTe-Sb2Te3 pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge2Sb2Te5, are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less
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Yimam, Daniel Tadesse, A. J. T. Van Der Ree, Omar Abou El Kheir, et al. "Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films." Nanomaterials 12, no. 10 (2022): 1717. http://dx.doi.org/10.3390/nano12101717.

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Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. Howev
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Kim, Sang Y., Sang J. Kim, Hun Seo, and Myong R. Kim. "Complex Refractive Indices of GeSbTe-Alloy Thin Films: Effect of Nitrogen Doping and Wavelength Dependence." Japanese Journal of Applied Physics 38, Part 1, No. 3B (1999): 1713–14. http://dx.doi.org/10.1143/jjap.38.1713.

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Nozaki, Hiroo, Yuji Ikeda, Kazuhide Ichikawa, and Akitomo Tachibana. "Electronic stress tensor analysis of molecules in gas phase of CVD process for gesbte alloy." Journal of Computational Chemistry 36, no. 16 (2015): 1240–51. http://dx.doi.org/10.1002/jcc.23920.

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Wu, Liangcai, Tao Li, Wanliang Liu, and Zhitang Song. "High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications." Applied Physics Express 12, no. 12 (2019): 125006. http://dx.doi.org/10.7567/1882-0786/ab5312.

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Thèses sur le sujet "GeSbTe alloy"

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ABOU, EL KHEIR OMAR. "Atomistic simulations of Ge-rich GeSbTe alloys for phase change memories." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2023. https://hdl.handle.net/10281/403657.

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Prototypical phase change compounds, typically based on GeSbTe (GST) alloys, display a crystallization temperature not suitable for embedded Phase Change Memories (ePCM) of interest for applications in the automotive sector. The search for an alternative material is thus a very active research field. Ge-rich GST alloys are emerging as promising materials for ePCM thanks to the higher thermal stability of their amorphous phase. Upon crystallization, Ge-rich GST alloys undergo a phase separation into Ge and other GST alloys. The segregation phenomena enhance the crystallization temperature (Tx),
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Bragaglia, Valeria. "Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices." Doctoral thesis, Humboldt-Universität zu Berlin, 2017. http://dx.doi.org/10.18452/18406.

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In dieser Arbeit wird das Wachstum von dünnen quasi-kristallinen Ge-Sb-Te (GST) Schichten mittels Molekularstrahlepitaxie demonstriert, die zu einer geordneten Konfiguration von intrinsischen Kristallgitterfehlstellen führen. Es wird gezeigt, wie es eine Strukturanalyse basierend auf Röntgenstrahlbeugungssimulationen, Dichtefunktionaltheorie und Transmissionselektronenmikroskopie ermöglicht, eine eindeutige Beurteilung der Kristallgitterlückenanordnung in den GST-Proben vorzunehmen. Das Verständnis für die Ordnungsprozesse der Gitterfehlstellen erlaubt eine gezielte Einstellung des Ordnungsgra
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Berlin, Katja. "In-situ transmission electron microscopy on high-temperature phase transitions of Ge-Sb-Te alloys." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19219.

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Das Hochtemperaturverhalten beeinflusst viele verschiedene Prozesse von der Materialherstellung bis hin zur technologischen Anwendung. In-situ Transmissionselektronenmikroskopie (TEM) bietet die Möglichkeit, die atomaren Prozesse während struktureller Phasenübergänge direkt und in Realzeit zu beobachten. In dieser Arbeit wurde in-situ TEM angewendet, um die Reversibilität des Schmelz- und Kristallisationsprozesses, sowie das anisotropen Sublimationsverhaltens von Ge-Sb-Te (GST) Dünnschichten zu untersuchen. Die gezielte Probenpräparation für die erfolgreiche Beobachtung der Hochtemperatur-Phas
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Bragaglia, Valeria [Verfasser], Henning [Gutachter] Riechert, Simone [Gutachter] Raoux, and David [Gutachter] Wright. "Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices / Valeria Bragaglia ; Gutachter: Henning Riechert, Simone Raoux, David Wright." Berlin : Humboldt-Universität zu Berlin, 2017. http://d-nb.info/1185579133/34.

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Muduli, Pranaba Kishor. "Ferromagnetic thin films of Fe and Fe 3 Si on low-symmetric GaAs(113)A substrates." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15473.

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In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte
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Kao, Tun-Min, and 高敦敏. "A Electrical Measurement Study on Phase-Change of Silicon-Doped GeSb based Alloys." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/vk2c65.

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碩士<br>國立清華大學<br>材料科學工程學系<br>102<br>Recently, there is a lot of research about various phase-change materials, because of the ultrafast crystallizing of GeSb9, it becomes one of the emerging candidates; however, the electrical resistance of its crystalline phase is too low to be used practically in PCRAM because of the requirement of too high RESET current, the research in our lab is focused on the Si-doped GeSb9, which has higher electrical resistance in the crystalline phase. In my experiments, by using the electrical measurement system, the information about the crystallization mechanism of
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Vinod, E. M. "Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5." Thesis, 2013. http://etd.iisc.ac.in/handle/2005/3339.

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GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable amorphous and crystalline phases, fast crystallization time, low power to switch, and high crystallization activation energy (to be stable at normal operating temperatures). Phase change memories can be tuned through compositional variations to achieve sufficient phase change contrast and thermal stability for data retention. Selenium is one of the attractive choices to use as an additive material owing to its
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Vinod, E. M. "Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5." Thesis, 2013. http://etd.iisc.ernet.in/2005/3339.

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GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable amorphous and crystalline phases, fast crystallization time, low power to switch, and high crystallization activation energy (to be stable at normal operating temperatures). Phase change memories can be tuned through compositional variations to achieve sufficient phase change contrast and thermal stability for data retention. Selenium is one of the attractive choices to use as an additive material owing to its
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Livres sur le sujet "GeSbTe alloy"

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Choudhury, Cyra Akila. Transnational Commercial Surrogacy. Oxford University Press, 2016. http://dx.doi.org/10.1093/oxfordhb/9780199935352.013.38.

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With the emergence of assisted reproductive technologies, particularly in vitro fertilization, gestational surrogacy in which an woman can be hired to gestate the child of commissioning parents has grown into a multimillion dollar industry. While many countries prohibit surrogacy, others permit and some even allow women to charge for the service of gestation on a commercial basis. This article addresses the regulation of transnational surrogacy and the related legal conflicts that arise in cross-border agreements particularly in commercial contracts It starts with a brief exploration of the su
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Chapitres de livres sur le sujet "GeSbTe alloy"

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Schoolman, Edward M. "Representations of Lothar I in the Liber pontificalis Ravennatis." In Reti Medievali E-Book. Firenze University Press, 2022. http://dx.doi.org/10.36253/978-88-5518-623-0.07.

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Lothar looms large in the Liber pontificalis of Ravenna, an episcopal gesta composed after 846 by a local cleric of that city named Agnellus. In its prefatory verse, Lothar was tied to the memory of his grandfather Charlemagne, and afterwards was presented as an ally of the city and its church, a relationship sealed by the service of the bishop George (837-846) as godfather to Lothar’s daughter Rotruda. Furthermore, upon the death of Louis the Pious, as part of an embassy attempting to resolve the conflicts between Lothar and his brothers, George sought to affirm Ravenna privileges on the eve of the battle of Fontenoy, an event described quite differently from other sources. Completed following these struggles, the Liber pontificalis of Ravenna used this image of Lothar to further claims of the special status of the city, especially in its independence from Rome and longstanding imperial connections, and actively sought to legitimize Lothar’s own position through a juxtaposition with Charlemagne. Although preserved in the accounts of the bishops of Ravenna, the singular efforts to elevate and memorialize Lothar differ from other contemporary institutional chronicles, and underscore the tension inherent in the narrative.
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Sunderland, Luke. "Revolt." In Rebel Barons. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198788485.003.0002.

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This chapter argues that the rebel baron chansons de geste justify baronial revolt. Sceptical about the effectiveness of moral constraints on rulers, they contain their own models for constructive opposition to sovereigns, where aristocratic violence provides the only effective brake on kings. They vehicle models for constructive opposition to sovereigns and portray revolt as a vital tool of social control. Rebellion in works like Les Saisnes, Gaydon, Gui de Bourgogne, Renaut de Montauban, and the Chevalerie d’Ogier is not anarchic but limited and structured like ritual, aiming to restrict royal demands and to allow for eventual appeals to the king’s mercy. The king is eventually freed from accusations of tyranny and the rebel from charges of treason, allowing for a new partnership, with the noble as brake on the sovereign’s power.
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Actes de conférences sur le sujet "GeSbTe alloy"

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Li, Yiming, Chih-Hong Hwang, Yi-Ting Kuo, and Hui-Wen Cheng. "Structure Effect of Cylindrical-Shaped GeSbTe Alloy on Phase Transition in Phase Change Memory." In 2008 8th IEEE Conference on Nanotechnology (NANO). IEEE, 2008. http://dx.doi.org/10.1109/nano.2008.109.

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Kim, A. M. T., J. Solis, J. P. Callan, C. A. D. Roeser, and E. Mazur. "Ultrafast Phase Transition Dynamics in GeSb Alloys." In Nonlinear Optics: Materials, Fundamentals and Applications. OSA, 2000. http://dx.doi.org/10.1364/nlo.2000.tuc3.

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Tomelleri, Martina, Anthony Albanese, Chiara Sabbione, et al. "Breaking the Thermal Stability Limit of Phase-Change Materials for Embedded Memory thanks to Innovative N-doped GeSe<sub>1-x</sub>Te<sub>x </sub>Alloys." In 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.f-2-06.

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