Se connecter

Bibliographies thématiques / Germanium poreux / Articles de revues

Pour voir les autres types de publications sur ce sujet consultez le lien suivant : Germanium poreux.

Articles de revues sur le sujet « Germanium poreux »

Auteur : Grafiati

Publié le 21 décembre 2024

Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres

Choisissez une source :

Consultez les 50 meilleurs articles de revues pour votre recherche sur le sujet « Germanium poreux ».

À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.

Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.

Parcourez les articles de revues sur diverses disciplines et organisez correctement votre bibliographie.

1

Chubenko, E. B., N. L. Grevtsov, V. P. Bondarenko, I. M. Gavrilin, A. V. Pavlikov, A. A. Dronov, L. S. Volkova et S. A. Gavrilov. « RAMAN SPECTRА OF SILICON/GERMANIUM ALLOY THIN FILMS BASED ON POROUS SILICON ». Journal of Applied Spectroscopy 89, n^o 5 (21 septembre 2022) : 614–20. http://dx.doi.org/10.47612/0514-7506-2022-89-5-614-620.

Texte intégral

Résumé :

The regularities of composition changes of silicon/germanium alloy thin films formed on a monocrystalline silicon substrate by electrochemical deposition of germanium into a porous silicon matrix with subsequent rapid thermal annealing (RTA) at a temperature of 750–950°C are studied. An analysis of the samples by Raman spectroscopy showed that an increase of RTA temperature leads to a decrease in the germanium concentration in the formed film. A decrease of the RTA duration at a given temperature makes it possible to obtain films with a higher concentration of germanium and to control the composition of thin silicon/germanium alloy films formed by changing the temperature and duration of RTA. The obtained results on controlling the composition of silicon/germanium alloy films can be used to create functional electronic devices, thermoelectric power converters, and optoelectronic devices.

Styles APA, Harvard, Vancouver, ISO, etc.

2

Garralaga Rojas, Enrique, Jan Hensen, Jürgen Carstensen, Helmut Föll et Rolf Brendel. « Porous germanium multilayers ». physica status solidi (c) 8, n^o 6 (7 avril 2011) : 1731–33. http://dx.doi.org/10.1002/pssc.201000130.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

3

Grevtsov, Nikita, Eugene Chubenko, Vitaly Bondarenko, Ilya Gavrilin, Alexey Dronov et Sergey Gavrilov. « Germanium electrodeposition into porous silicon for silicon-germanium alloying ». Materialia 26 (décembre 2022) : 101558. http://dx.doi.org/10.1016/j.mtla.2022.101558.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

4

Amato, G., A. M. Rossi, L. Boarino et N. Brunetto. « On the role of germanium in porous silicon-germanium luminescence ». Philosophical Magazine B 76, n^o 3 (septembre 1997) : 395–403. http://dx.doi.org/10.1080/01418639708241102.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

5

Li, Xiu, Wei Guo, Qian Wan et Jianmin Ma. « Porous amorphous Ge/C composites with excellent electrochemical properties ». RSC Advances 5, n^o 36 (2015) : 28111–14. http://dx.doi.org/10.1039/c5ra02459e.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

6

Xu, Jing, Thanh-Dinh Nguyen, Kai Xie, Wadood Y. Hamad et Mark J. MacLachlan. « Chiral nematic porous germania and germanium/carbon films ». Nanoscale 7, n^o 31 (2015) : 13215–23. http://dx.doi.org/10.1039/c5nr02520f.

Texte intégral

Résumé :

Co-assembly of cellulose nanocrystals (CNCs) with germanium(iv) alkoxide in a mixed solvent system produces chiral nematic photonic GeO₂/CNC composites, which were converted to semiconducting, mesoporous GeO₂/C and Ge/C replicas.

Styles APA, Harvard, Vancouver, ISO, etc.

7

Yin, Huayi, Wei Xiao, Xuhui Mao, Hua Zhu et Dihua Wang. « Preparation of a porous nanostructured germanium from GeO2via a “reduction–alloying–dealloying” approach ». Journal of Materials Chemistry A 3, n^o 4 (2015) : 1427–30. http://dx.doi.org/10.1039/c4ta05244g.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

8

Rojas, E. Garralaga, J. Hensen, J. Carstensen, H. Föll et R. Brendel. « Lift-off of Porous Germanium Layers ». Journal of The Electrochemical Society 158, n^o 6 (2011) : D408. http://dx.doi.org/10.1149/1.3583645.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

9

Isaiev, M., S. Tutashkonko, V. Jean, K. Termentzidis, T. Nychyporuk, D. Andrusenko, O. Marty, R. M. Burbelo, D. Lacroix et V. Lysenko. « Thermal conductivity of meso-porous germanium ». Applied Physics Letters 105, n^o 3 (21 juillet 2014) : 031912. http://dx.doi.org/10.1063/1.4891196.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

10

Platonov, Nikolay, Nail Suleimanov et Valery Bazarov. « Study of the electrophysical properties of nanostructured porous germanium as a promising material for electrodes of electrochemical capacitors ». E3S Web of Conferences 288 (2021) : 01073. http://dx.doi.org/10.1051/e3sconf/202128801073.

Texte intégral

Résumé :

Electrochemical capacitors (ECC) are a fast charging devices, with high power density, capacity and increased life time. Nanostructured semiconductors are now considered as the promising materials for electrodes of such devices due to its conductive properties and effective surface. One of such materials is the porous germanium which can be used as an electrode in electrochemical capacitors. In this article the novel approach based on the method of ion implantation was developed to grow these structures. This method allows to obtain a structures up to 1 μm thick. The object of this work was the investigation of the electrophysical characteristics of samples of nanostructured porous germanium (Ge) depending on the implantation dose and surface morphology. The scientific novelty of this research lies in the search the structures with the highest effective surface area and electronic conductivity, capable of multiplying the energy capacity and specific power of ECC. Methods: The samples of amorphous Ge were grown on dielectric single-crystal substrates of Al2O3. The thickness of samples was 600 and 1000 nm. The magnetron sputtering and ion implantation methods were used to growth these structures. The irradiation with Ge+ ions produced with an energy of 40 keV and the range of implantation doses varied from 2·1016 to 12•1016 ion / cm2. The study of electrical properties was carried out on the Hall installation HL55PC at the NPP KVANT in Moscow. The following parameters were measured: the sheet concentration of carriers in the near-surface layer, electrical resistance, mobility of the charge carriers, Hall coefficient. As a result, the dependences of carriers concentration and their mobility as the function of the implantation dose and thickness of the samples of nanostructured porous germanium were determined, and the results were analyzed. Results: It was found that ion implantation of single-crystal germanium leads to an increase in the carrier concentration in the near-surface layer. To sum up, the most suitable material as an electrode for ECC is the porous germanium with the maximum dose of ion implantation and the largest thickness. The maximum sheet carrier concentration that was obtained in the study for Ge is 1017 cm-2.

Styles APA, Harvard, Vancouver, ISO, etc.

11

Jing, Chengbin, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin et Junhao Chu. « Fabrication and characteristics of porous germanium films ». Science and Technology of Advanced Materials 10, n^o 6 (décembre 2009) : 065001. http://dx.doi.org/10.1088/1468-6996/10/6/065001.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

12

Steinbach, T., et W. Wesch. « Porous structure formation in ion irradiated germanium ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 319 (janvier 2014) : 112–16. http://dx.doi.org/10.1016/j.nimb.2013.11.003.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

13

Fässler, Thomas F. « Germanium(cF136) : A New Crystalline Modification of Germanium with the Porous Clathrate-II Structure ». Angewandte Chemie International Edition 46, n^o 15 (2 avril 2007) : 2572–75. http://dx.doi.org/10.1002/anie.200604586.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

14

Yang, Chenglong, Yu Jiang, Xiaowu Liu, Xiongwu Zhong et Yan Yu. « Germanium encapsulated in sulfur and nitrogen co-doped 3D porous carbon as an ultra-long-cycle life anode for lithium ion batteries ». Journal of Materials Chemistry A 4, n^o 48 (2016) : 18711–16. http://dx.doi.org/10.1039/c6ta08681k.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

15

Ngo, Duc Tung, Hang T. T. Le, Ramchandra S. Kalubarme, Jae-Young Lee, Choong-Nyeon Park et Chan-Jin Park. « Uniform GeO2 dispersed in nitrogen-doped porous carbon core–shell architecture : an anode material for lithium ion batteries ». Journal of Materials Chemistry A 3, n^o 43 (2015) : 21722–32. http://dx.doi.org/10.1039/c5ta05145b.

Texte intégral

Résumé :

Germanium oxide (GeO₂), which possesses great potential as a high-capacity anode material for lithium ion batteries, has suffered from its poor capacity retention and rate capability due to significant volume changes during lithiation and delithiation.

Styles APA, Harvard, Vancouver, ISO, etc.

16

Choi, Hee Cheul, et Jillian M. Buriak. « Preparation and functionalization of hydride terminated porous germanium ». Chemical Communications, n^o 17 (2000) : 1669–70. http://dx.doi.org/10.1039/b004011h.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

17

Akkari, Emna, Oualid Touayar et Brahim Bessais. « Reflectivity, Absorption and Structural Studies of Porous Germanium ». Sensor Letters 9, n^o 6 (1 décembre 2011) : 2295–98. http://dx.doi.org/10.1166/sl.2011.1752.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

18

Guzmán, David, Miguel Cruz et Chumin Wang. « Electronic and optical properties of ordered porous germanium ». Microelectronics Journal 39, n^o 3-4 (mars 2008) : 523–25. http://dx.doi.org/10.1016/j.mejo.2007.07.083.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

19

Miyazaki, S., K. Sakamoto, K. Shiba et M. Hirose. « Photoluminescence from anodized and thermally oxidized porous germanium ». Thin Solid Films 255, n^o 1-2 (janvier 1995) : 99–102. http://dx.doi.org/10.1016/0040-6090(94)05630-v.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

20

Shieh, J., H. L. Chen, T. S. Ko, H. C. Cheng et T. C. Chu. « Nanoparticle-Assisted Growth of Porous Germanium Thin Films ». Advanced Materials 16, n^o 13 (5 juillet 2004) : 1121–24. http://dx.doi.org/10.1002/adma.200306541.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

21

Karavanskii, V. A., A. A. Lomov, A. G. Sutyrin, V. A. Bushuev, N. N. Loikho, N. N. Melnik, T. N. Zavaritskaya et S. Bayliss. « Observation of nanocrystals in porous stain-etched germanium ». physica status solidi (a) 197, n^o 1 (mai 2003) : 144–49. http://dx.doi.org/10.1002/pssa.200306490.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

22

Stepanov, A. L., V. V. Vorob’ev, V. I. Nuzhdin, V. F. Valeev et Yu N. Osin. « Formation of Porous Germanium Layers by Silver-Ion Implantation ». Technical Physics Letters 44, n^o 4 (avril 2018) : 354–57. http://dx.doi.org/10.1134/s1063785018040260.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

23

Rogov, R. M., V. I. Nuzhdin, V. F. Valeev, A. I. Gumarov, L. R. Tagirov, I. M. Klimovich et A. L. Stepanov. « Porous germanium with copper nanoparticles formed by ion implantation ». Vacuum 166 (août 2019) : 84–87. http://dx.doi.org/10.1016/j.vacuum.2019.04.062.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

24

Rogov, A. M., A. I. Gumarov, L. R. Tagirov et A. L. Stepanov. « Swelling and sputtering of porous germanium by silver ions ». Composites Communications 16 (décembre 2019) : 57–60. http://dx.doi.org/10.1016/j.coco.2019.08.013.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

25

Rogov, A. M., Y. N. Osin, V. I. Nuzhdin, V. F. Valeev et A. L. Stepanov. « Porous germanium with Ag nanoparticles formed by ion implantation ». Journal of Physics : Conference Series 1092 (septembre 2018) : 012125. http://dx.doi.org/10.1088/1742-6596/1092/1/012125.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

26

Akkari, E., Z. Benachour, S. Aouida, O. Touayar, B. Bessais et J. Benbrahim. « Study and characterization of porous germanium for radiometric measurements ». physica status solidi (c) 6, n^o 7 (juillet 2009) : 1685–88. http://dx.doi.org/10.1002/pssc.200881099.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

27

Gorokhov, E. B., K. N. Astankova, I. A. Azarov, V. A. Volodin et A. V. Latyshev. « New method of porous Ge layer fabrication : structure and optical properties ». Физика и техника полупроводников 52, n^o 5 (2018) : 517. http://dx.doi.org/10.21883/ftp.2018.05.45861.50.

Texte intégral

Résumé :

AbstractPorous germanium films were produced by selective removal of the GeO_2 matrix from the GeO_2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO_2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

Styles APA, Harvard, Vancouver, ISO, etc.

28

Stepanov, A. L., Yu N. Osin, V. I. Nuzhdin, V. F. Valeev et V. V. Vorob’ev. « Synthesis of Porous Germanium with Silver Nanoparticles by Ion Implantation ». Nanotechnologies in Russia 12, n^o 9-10 (septembre 2017) : 508–13. http://dx.doi.org/10.1134/s1995078017050123.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

29

Ko, T. S., J. Shieh, M. C. Yang, T. C. Lu, H. C. Kuo et S. C. Wang. « Phase transformation and optical characteristics of porous germanium thin film ». Thin Solid Films 516, n^o 10 (mars 2008) : 2934–38. http://dx.doi.org/10.1016/j.tsf.2007.06.023.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

30

Abdullahi, Yusuf Zuntu, et Fatih Ersan. « Theoretical design of porous dodecagonal germanium carbide (d-GeC) monolayer ». RSC Advances 13, n^o 5 (2023) : 3290–94. http://dx.doi.org/10.1039/d2ra07841d.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

31

Zegadi, Rami, Nathalie Lorrain, Sofiane Meziani, Yannick Dumeige, Loїc Bodiou, Mohammed Guendouz, Abdelouahab Zegadi et Joël Charrier. « Theoretical Demonstration of the Interest of Using Porous Germanium to Fabricate Multilayer Vertical Optical Structures for the Detection of SF6 Gas in the Mid-Infrared ». Sensors 22, n^o 3 (22 janvier 2022) : 844. http://dx.doi.org/10.3390/s22030844.

Texte intégral

Résumé :

Porous germanium is a promising material for sensing applications in the mid-infrared wavelength range due to its biocompatibility, large internal surface area, open pores network and widely tunable refractive index, as well as its large spectral transparency window ranging from 2 to 15 μm. Multilayers, such as Bragg reflectors and microcavities, based on porous germanium material, are designed and their optical spectra are simulated to enable SF6 gas-sensing applications at a wavelength of 10.55 µm, which corresponds to its major absorption line. The impact of both the number of successive layers and their respective porosity on the multilayer structures reflectance spectrum is investigated while favoring low layer thicknesses and thus the ease of multilayers manufacturing. The suitability of these microcavities for mid-infrared SF6 gas sensing is then numerically assessed. Using an asymmetrical microcavity porous structure, a sensitivity of 0.01%/ppm and a limit of detection (LOD) around 1 ppb for the SF6 gas detection are calculated. Thanks to both the porous nature allowing gases to easily infiltrate the overall structure and Ge mid-infrared optical properties, a theoretical detection limit nearly 1000 times lower than the current state of the art is simulated.

Styles APA, Harvard, Vancouver, ISO, etc.

32

Al-Diabat, Ahmad M., Natheer A. Algadri, Tariq Alzoubi, Naser M. Ahmed, Abdulsalam Abuelsamen, Osama Abu Noqta, Ghaseb N. Makhadmeh, Amal Mohamed Ahmed Ali et Almutery Aml. « Combining Germanium Quantum Dots with Porous Silicon : An Innovative Method for X-ray Detection ». WSEAS TRANSACTIONS ON ELECTRONICS 15 (10 décembre 2024) : 128–34. https://doi.org/10.37394/232017.2024.15.15.

Texte intégral

Résumé :

This study investigates the controlled electrochemical synthesis of porous silicon and germanium (Ge)-doped porous silicon using a 4:1 ratio of hydrofluoric acid (HF) to ethanol. Structural analysis performed with FESEM-EDX confirmed the presence of Ge in the samples. Analysis of the I-V characteristics demonstrated that increasing the bias voltage at the source led to a corresponding increase in the observed current. Additionally, effective X-ray measurements facilitated the assessment of X-ray irradiation effects on the sample detector. The experimental results indicated that the optimal conditions for the porous silicon (PS) and Ge-doped porous silicon (Ge-PS) samples were (90V, 100mA, 1s) and (100V, 10mA, 0.5s), respectively.

Styles APA, Harvard, Vancouver, ISO, etc.

33

Sheng, Xianhua, Zhizhong Zeng, Changxin Du, Ting Shu et Xiangdong Meng. « Amorphous porous germanium anode with variable dimension for lithium ion batteries ». Journal of Materials Science 56, n^o 27 (28 juin 2021) : 15258–67. http://dx.doi.org/10.1007/s10853-021-06264-8.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

34

Stepanov, A. L., V. I. Nuzhdin, V. F. Valeev, A. M. Rogov, V. V. Vorobev et Y. N. Osin. « Porous germanium formed by low energy high dose Ag + -ion implantation ». Vacuum 152 (juin 2018) : 200–204. http://dx.doi.org/10.1016/j.vacuum.2018.03.030.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

35

Chang, S. S., et R. E. Hummel. « Comparison of photoluminescence behavior of porous germanium and spark-processed Ge ». Journal of Luminescence 86, n^o 1 (février 2000) : 33–38. http://dx.doi.org/10.1016/s0022-2313(99)00179-9.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

36

Lockwood, D. J., N. L. Rowell, I. Berbezier, G. Amiard, L. Favre, A. Ronda, M. Faustini et D. Grosso. « Optical Properties of Germanium Dots Self-Assembled on Porous TiO2 Templates ». ECS Transactions 33, n^o 16 (17 décembre 2019) : 147–65. http://dx.doi.org/10.1149/1.3553166.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

37

Xiao, Ying, Minhua Cao, Ling Ren et Changwen Hu. « Hierarchically porous germanium-modified carbon materials with enhanced lithium storage performance ». Nanoscale 4, n^o 23 (2012) : 7469. http://dx.doi.org/10.1039/c2nr31533e.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

38

Koto, Makoto, Ann F. Marshall, Irene A. Goldthorpe et Paul C. McIntyre. « Gold-Catalyzed Vapor-Liquid-Solid Germanium-Nanowire Nucleation on Porous Silicon ». Small 6, n^o 9 (21 avril 2010) : 1032–37. http://dx.doi.org/10.1002/smll.200901764.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

39

Mishra, Kuber, Xiao-Chen Liu, Fu-Sheng Ke et Xiao-Dong Zhou. « Porous germanium enabled high areal capacity anode for lithium-ion batteries ». Composites Part B : Engineering 163 (avril 2019) : 158–64. http://dx.doi.org/10.1016/j.compositesb.2018.10.076.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

40

Kartopu, G., et Y. Ekinci. « Further evidence on the observation of compositional fluctuation in silicon–germanium alloy nanocrystals prepared in anodized porous silicon–germanium films ». Thin Solid Films 473, n^o 2 (février 2005) : 213–17. http://dx.doi.org/10.1016/j.tsf.2004.04.064.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

41

Xiao, Chengmao, Ning Du, Yifan Chen, Jingxue Yu, Wenjia Zhao et Deren Yang. « Ge@C three-dimensional porous particles as high-performance anode materials of lithium-ion batteries ». RSC Advances 5, n^o 77 (2015) : 63056–62. http://dx.doi.org/10.1039/c5ra08656f.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

42

Akkari, Emna, Oualid Touayar, F. Javier Del Campo et Josep Montserrat. « Improved electrical characteristics of porous germanium photodiode obtained by phosphorus ion implantation ». International Journal of Nanotechnology 10, n^o 5/6/7 (2013) : 553. http://dx.doi.org/10.1504/ijnt.2013.053524.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

43

Karavanskii, V. A., A. A. Lomov, A. G. Sutyrin, V. A. Bushuev, N. N. Loikho, N. N. Melnik, T. N. Zavaritskaya et S. Bayliss. « Raman and X-ray studies of nanocrystals in porous stain-etched germanium ». Thin Solid Films 437, n^o 1-2 (août 2003) : 290–96. http://dx.doi.org/10.1016/s0040-6090(03)00158-5.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

44

Wolter, S. D., T. Tyler et N. M. Jokerst. « Surface characterization of oxide growth on porous germanium films oxidized in air ». Thin Solid Films 522 (novembre 2012) : 217–22. http://dx.doi.org/10.1016/j.tsf.2012.09.041.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

45

Yuan, Ye, Jia Liu, Hao Ren, Xiaofei Jing, Wei Wang, Heping Ma, Fuxing Sun et Huijun Zhao. « Synthesis and characterization of germanium-centered three-dimensional crystalline porous aromatic framework ». Journal of Materials Research 27, n^o 10 (9 janvier 2012) : 1417–20. http://dx.doi.org/10.1557/jmr.2011.433.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

46

Chubenko, E. B., N. L. Grevtsov, V. P. Bondarenko, I. M. Gavrilin, A. V. Pavlikov, A. A. Dronov, L. S. Volkova et S. A. Gavrilov. « Raman Spectra of Silicon/Germanium Alloy Thin Films Based on Porous Silicon ». Journal of Applied Spectroscopy 89, n^o 5 (novembre 2022) : 829–34. http://dx.doi.org/10.1007/s10812-022-01432-3.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

47

Chapotot, Alexandre, Bouraoui Ilahi, Javier Arias-Zapata, Tadeáš Hanuš, Ahmed Ayari, Gwenaëlle Hamon, Jinyoun Cho, Kristof Dessein, Maxime Darnon et Abderraouf Boucherif. « Germanium surface wet-etch-reconditioning for porous lift-off and substrate reuse ». Materials Science in Semiconductor Processing 168 (décembre 2023) : 107851. http://dx.doi.org/10.1016/j.mssp.2023.107851.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

48

Grevtsov, Nikita, Eugene Chubenko, Ilya Gavrilin, Dmitry Goroshko, Olga Goroshko, Ilia Tsiniaikin, Vitaly Bondarenko, Maksim Murtazin, Alexey Dronov et Sergey Gavrilov. « Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing ». Materials Science in Semiconductor Processing 187 (mars 2025) : 109148. http://dx.doi.org/10.1016/j.mssp.2024.109148.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

49

ГОРОШКО, Д. Л., И. М. ГАВРИЛИН, А. А. ДРОНОВ, О. А. ГОРОШКО et Л. С. ВОЛКОВА. « STRUCTURE AND THERMAL CONDUCTIVITY OF THIN FILMS OF THE SI1-XGEX ALLOY FORMED BY ELECTROCHEMICAL DEPOSITION OF GERMANIUM INTO POROUS SILICON ». Автометрия 59, n^o 6 (29 décembre 2023) : 80–88. http://dx.doi.org/10.15372/aut20230609.

Texte intégral

Résumé :

Сплошные и пористые плёнки сплавов Si1-xGex с содержанием германия около 40 % и толщиной 3-4 мкм, сформированные на монокристаллическом кремнии методом электрохимического осаждения германия в матрицу пористого кремния с последующим быстрым термическим отжигом при температуре 950 °C, исследованы методами спектроскопии комбинационного рассеяния света (КРС), оптической спектроскопии и сканирующей электронной микроскопии. На основе спектров, снятых в стоксовой и антистоксовой областях частот с использованием статистики Больцмана и закона теплопроводности Фурье, определены коэффициенты теплопроводности плёнок, которые составляют 7-9 и 3-6 Вт / (м ⋅ К) для сплошной и пористой плёнок соответственно. Низкая теплопроводность пористой плёнки объясняется дополнительнымфононным рассеянием на развитой поверхности пор. Перспективность применения таких плёнок в термоэлектрических преобразователях обеспечивается простотой и масштабируемостью способа изготовления сплава, а также его низкой теплопроводностью. Solid and porous films of the Si 1-xGex alloys with a germanium content of about 40% and a thickness of 3-4 μm, formed on single-crystal silicon by electrochemical deposition of germanium into a porous silicon matrix followed by rapid thermal annealing at a temperature of 950 °C, are studied by Raman spectroscopy, optical spectroscopy, and scanning electron microscopy. Based on the Raman spectra taken in the Stokes and anti-Stokes frequency regions, using Boltzmann statistics and the Fourier thermal conductivity law, the thermal conductivity of the films is determined, which is found to be 7-9 and 3-6 W/(m×K) for a continuous and porous film, respectively. The low thermal conductivity of the porous film is explained by additional phonon scattering from the developed pore surface. The prospect of using such films in thermoelectric converters is ensured by the simplicity and scalability of the method for manufacturing the alloy, as well as its low thermal conductivity.

Styles APA, Harvard, Vancouver, ISO, etc.

50

Zegadi, Rami, Nathalie Lorrain, Loїc Bodiou, Mohammed Guendouz, Lahcene Ziet et Joël Charrier. « Enhanced mid-infrared gas absorption spectroscopic detection using chalcogenide or porous germanium waveguides ». Journal of Optics 23, n^o 3 (18 février 2021) : 035102. http://dx.doi.org/10.1088/2040-8986/abdf69.

Texte intégral

Styles APA, Harvard, Vancouver, ISO, etc.

Nous offrons des réductions sur tous les plans premium pour les auteurs dont les œuvres sont incluses dans des sélections littéraires thématiques. Contactez-nous pour obtenir un code promo unique!