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Articles de revues sur le sujet « GaAs nanomembrane »

Auteur : Grafiati
Publié le 9 mars 2023
Mis à jour le 10 mars 2023

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1

Raya, Andrés M., David Fuster et José M. Llorens. « Numerical Study on Mie Resonances in Single GaAs Nanomembranes ». Nanomaterials 9, no 6 (5 juin 2019) : 856. http://dx.doi.org/10.3390/nano9060856.

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GaAs nanomembranes grown by selective area epitaxy are novel structures. The high refractive index of GaAs makes them good candidates for nanoantennas. We numerically studied the optical modal structure of the resonator. The nanomembrane geometry introduces a strong light-polarization dependence. The scattering is dominated by an electric dipole contribution for polarization along the nanomembrane long dimension and by a magnetic dipole contribution in the orthogonal direction. The dependence on the geometry of the resonances close to the GaAs band gap was modeled by a single coefficient. It describes the resonance shifts against up-to 40% changes in length, height, and width. We showed that the nanomembranes exhibited field enhancement, far-field directionality, and tunability with the GaAs band gap. All these elements confirm their great potential as nanoantennas.
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Gregušová, Dagmar, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera et Róbert Kúdela. « GaAs Nanomembranes in the High Electron Mobility Transistor Technology ». Materials 14, no 13 (22 juin 2021) : 3461. http://dx.doi.org/10.3390/ma14133461.

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A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.
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3

Kim, Kwangeun, et Jaewon Jang. « Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment ». Inorganics 10, no 12 (28 novembre 2022) : 228. http://dx.doi.org/10.3390/inorganics10120228.

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Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to Si/GaAs tunnel junctions (TJs). The atomic-scale features of the H-O-terminated Si/GaAs TJ were analyzed and compared to those of Si/GaAs heterojunctions with no UVO treatment. The electrical characteristics demonstrated the emergence of negative differential resistance, with an average peak-to-valley current ratio of 3.49, which was examined based on the band-to-band tunneling and thermionic emission theories.
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4

Gai, Boju, Yukun Sun, Huandong Chen, Minjoo Larry Lee et Jongseung Yoon. « 10-Fold-Stack Multilayer-Grown Nanomembrane GaAs Solar Cells ». ACS Photonics 5, no 7 (26 juin 2018) : 2786–90. http://dx.doi.org/10.1021/acsphotonics.8b00586.

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5

Zhang, Fei, XiaoFei Nie, GaoShan Huang, HongLou Zhen, Fei Ding, ZengFeng Di et YongFeng Mei. « Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane ». Applied Physics Express 12, no 6 (23 mai 2019) : 065003. http://dx.doi.org/10.7567/1882-0786/ab2161.

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Liu, Chen, Sang June Cho, Yei Hwan Jung, Tzu-Hsuan Chang, Jung-Hun Seo, Solomon Mikael, Yuming Zhang et al. « Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates ». Applied Physics Letters 110, no 13 (27 mars 2017) : 133505. http://dx.doi.org/10.1063/1.4979509.

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7

Yoon, Jongseung. « III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics ». MRS Advances 2, no 30 (2017) : 1591–96. http://dx.doi.org/10.1557/adv.2017.139.

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ABSTRACTDue to their highly favorable materials properties such as direct bandgap, appropriate bandgap energy against solar spectrum, and ability to form multiple junctions, epitaxially grown III-V compound semiconductors such as gallium arsenide have provided unmatched performance over silicon in solar energy harvesting. However, their large-scale deployment in terrestrial photovoltaics remains as a daunting challenge mainly due to the high cost of growing device-quality epitaxial materials. In this regard, releasable multilayer epitaxial growth in conjunction with printing-based deterministic materials assemblies represents a promising approach that can overcome this challenge but also create novel engineering designs and device functionalities, each with significant practical values in photovoltaic technologies. This article will provide an overview of recent advances in materials design, fabrication concept, and nanophotonic light management of multilayer-grown nanomembrane-based GaAs solar cells aiming for high performance, cost-efficient platforms of III-V photovoltaics.
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8

Kim, Kwangeun, Jaewon Jang et Hyungtak Kim. « Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method ». Results in Physics 25 (juin 2021) : 104279. http://dx.doi.org/10.1016/j.rinp.2021.104279.

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9

Bollani, Monica, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio et Stefano Sanguinetti. « Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes : A Morphological Study ». Crystals 10, no 2 (22 janvier 2020) : 57. http://dx.doi.org/10.3390/cryst10020057.

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We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.
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Liu, J., K. Usami, A. Naesby, T. Bagci, E. S. Polzik, P. Lodahl et S. Stobbe. « High-Q optomechanical GaAs nanomembranes ». Applied Physics Letters 99, no 24 (12 décembre 2011) : 243102. http://dx.doi.org/10.1063/1.3668092.

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11

Müller, C., I. Neckel, M. Monecke, V. Dzhagan, G. Salvan, S. Schulze, S. Baunack et al. « Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes ». RSC Advances 6, no 76 (2016) : 72568–74. http://dx.doi.org/10.1039/c6ra13684b.

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12

Tutuncuoglu, G., M. de la Mata, D. Deiana, H. Potts, F. Matteini, J. Arbiol et A. Fontcuberta i Morral. « Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes ». Nanoscale 7, no 46 (2015) : 19453–60. http://dx.doi.org/10.1039/c5nr04821d.

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13

Zhang, Fei, GaoShan Huang, XiaoFei Nie, Xin Cao, Zhe Ma, Fei Ding, ZengFeng Di, HongLou Zhen et YongFeng Mei. « Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes ». Physics Letters A 383, no 24 (août 2019) : 2938–42. http://dx.doi.org/10.1016/j.physleta.2019.06.034.

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14

Gu, Baijie, et Rolf Binder. « Theoretical approach to the excitonic response of GaAs nanomembranes in the averaged-strain approximation ». Journal of the Optical Society of America B 29, no 2 (26 janvier 2012) : A60. http://dx.doi.org/10.1364/josab.29.000a60.

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15

Aouassa, Mansour, Giorgia Franzò, Ridha M’Ghaieth et Hassen Chouaib. « Direct growth and size tuning of InAs/GaAs quantum dots on transferable silicon nanomembranes for solar cells application ». Journal of Materials Science : Materials in Electronics 32, no 13 (15 juin 2021) : 18251–63. http://dx.doi.org/10.1007/s10854-021-06368-6.

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16

Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi et N. Ummal Salmaan. « Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics ». International Journal of Polymer Science 2022 (13 septembre 2022) : 1–10. http://dx.doi.org/10.1155/2022/8331886.

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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characteristics like conductivity, charge selectivity, flexibility, and lightweight make them eligible for their selection in fabrication process for wearable electronics devices. In this article, the performance of PIN diodes (BAR64-02) as an RF switch is investigated from 1 to 10 GHz. PIN diodes can control large amounts of RF power at very low DC voltage, implying their suitability for RF applications. In this paper, the benefit of using plastic polymer composites for the fabrication of PIN diodes, capacitors, and antennas is thoroughly described. Along with this, individual characterization, fabrication, and testing of all biasing components are also done to analyze the individual effect of each biasing component on the performance of PIN diodes. The complete biasing circuitry for the PIN diode is modeled in the HFSS software. When a PIN diode is inserted in between 50 Ω microstrip line, it introduces 1 dB insertion loss and 20 dB isolation loss from 1 to 7 GHz. Finally, a PIN diode is integrated in a reconfigurable antenna to study the actual effect. The transmission loss in the RF signal is nearly 1 dB from 1 to 7 GHz in the presence of biasing components.
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Freitas, Raul O., Christoph F. Deneke, Ângelo Malachias, Gaspar Darin et Sérgio L. Morelhão. « Measuring Friedel pairs in nanomembranes of GaAs (001) ». Journal of Nanoparticle Research 15, no 4 (10 mars 2013). http://dx.doi.org/10.1007/s11051-013-1527-3.

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