Bibliographies thématiques / Front-end IC / Articles de revues

Articles de revues sur le sujet « Front-end IC »

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Auteur : Grafiati
Publié le 14 mars 2023

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1

Kwon, Kibaek, Chankyu Bae, Myunsik Kim, Jiwon Son, Hein Kim, Heuikwan Yang et Joongho Choi. « Analog Front-End IC Design for Vehicle Ultrasonic Sensor ». Journal of the Institute of Electronics and Information Engineers 58, no 9 (30 septembre 2021) : 13–19. http://dx.doi.org/10.5573/ieie.2021.58.9.13.

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Banuaji, Aditya, et Hyouk-Kyu Cha. « A Highly-Integrated Analog Front-End IC for Medical Ultrasound Imaging Systems ». Journal of the Institute of Electronics Engineers of Korea 50, no 12 (25 décembre 2013) : 49–55. http://dx.doi.org/10.5573/ieek.2013.50.12.049.

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3

Song, Haryong, Yunjong Park, Hyungseup Kim et Hyoungho Ko. « Fully Integrated Biopotential Acquisition Analog Front-End IC ». Sensors 15, no 10 (30 septembre 2015) : 25139–56. http://dx.doi.org/10.3390/s151025139.

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4

Kim, Hyuntae, et Bertan Bakkaloglu. « CMOS Analog Front-End IC for Gas Sensors ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (1 janvier 2011) : 001761–96. http://dx.doi.org/10.4071/2011dpc-wp25.

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An electrochemical sensor readout analog front-end (AFE) IC for recording long term chemical and gas exposure is presented. The AFE readout circuit enables the detection of exhaust fumes in hazardous diesel and gasoline equipment, which helps correlate atmospheric pollutants with severe illnesses. The AFE reads out the output of eight conductometric sensor arrays and eight amperometric sensor arrays. The IC consists of a low noise potentiostat and associated 9 bits current-steering DAC for sensor stimulus, followed by the first order nested chopped ΣΔ ADC. The conductometric sensor uses a current driven approach for extracting resistance change of the sensor depending on gas concentration. The amperometric sensor uses a potentiostat to apply constant voltage for measuring current out of the sensor after a chemical reaction. The core area for the AFE is 2.65x0.95 mm2. The IC is fabricated in 0.18μm CMOS process and achieves 91dB SNR with 1.32mW power consumption per channel from a 1.8 V supply. With digital offset storage and nested chopping, the readout IC achieves 500 μV input referred offset. In order to use the system with AFE as part of a compact badge with battery, the entire gas detection system has been designed in 3D layers with a bio sensor mounted layer, an AFE layer, power management layer, a micro controller layer, and battery.
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Meyer, R. G., et W. D. Mack. « A 1-GHz BiCMOS RF front-end IC ». IEEE Journal of Solid-State Circuits 29, no 3 (mars 1994) : 350–55. http://dx.doi.org/10.1109/4.278360.

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Cha, Hyouk-Kyu. « A Low-Voltage Low-Power Analog Front-End IC for Neural Recording Implant Devices ». Journal of the Institute of Electronics and Information Engineers 53, no 10 (25 octobre 2016) : 34–39. http://dx.doi.org/10.5573/ieie.2016.53.10.034.

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Bauwelinck, J., E. De Backer, C. Mélange, E. Matei, P. Ossieur, X. Z. Qiu, J. Vandewege et S. Horvath. « High dynamic range 60 MHz powerline front-end IC ». Electronics Letters 44, no 5 (2008) : 348. http://dx.doi.org/10.1049/el:20083198.

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Teng, Shin-Lian, Robert Rieger et Yu-Bin Lin. « Programmable ExG Biopotential Front-End IC for Wearable Applications ». IEEE Transactions on Biomedical Circuits and Systems 8, no 4 (août 2014) : 543–51. http://dx.doi.org/10.1109/tbcas.2013.2285567.

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Kramer, R. « A bus controlled clock generator IC (for TV front end) ». IEEE Transactions on Consumer Electronics 37, no 3 (1991) : 531–36. http://dx.doi.org/10.1109/30.85563.

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Son, Jin-Young, et Hyouk-Kyu Cha. « An Ultra Low-power ECoG Signal Recording Analog Front-end IC ». Journal of the Institute of Electronics and Information Engineers 57, no 8 (31 août 2020) : 37–47. http://dx.doi.org/10.5573/ieie.2020.57.8.37.

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Joo, Taehwan, Dong-Ho Lee et Songcheol Hong. « A Fully Integrated RF CMOS Front-End IC for Connectivity Applications ». IEEE Transactions on Circuits and Systems II : Express Briefs 63, no 11 (novembre 2016) : 1024–28. http://dx.doi.org/10.1109/tcsii.2016.2548259.

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12

Einsweiler, K., A. Joshi, S. Kleinfelder, L. Luo, R. Marchesini, O. Milgrome et F. Pengg. « Dead-time free pixel readout architecture for ATLAS front-end IC ». IEEE Transactions on Nuclear Science 46, no 3 (juin 1999) : 166–70. http://dx.doi.org/10.1109/23.775508.

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Kamata, Takatsugu, Toshimasa Matsuoka et Kenji Taniguchi. « Rf front-end design for CMOS terrestrial wideband TV tuner IC ». IEEE Transactions on Consumer Electronics 56, no 3 (août 2010) : 1340–48. http://dx.doi.org/10.1109/tce.2010.5606268.

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14

Tran, Luat, et Hyouk-Kyu Cha. « An ultra-low-power neural signal acquisition analog front-end IC ». Microelectronics Journal 107 (janvier 2021) : 104950. http://dx.doi.org/10.1016/j.mejo.2020.104950.

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15

Van Ham, Jeroen, et Robert Puers. « A power and data front-end IC for biomedical monitoring systems ». Sensors and Actuators A : Physical 147, no 2 (octobre 2008) : 641–48. http://dx.doi.org/10.1016/j.sna.2008.06.026.

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Barbero, M., D. Arutinov, R. Beccherle, G. Darbo, R. Ely, D. Fougeron, M. Garcia-Sciveres et al. « A new ATLAS pixel front-end IC for upgraded LHC luminosity ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 604, no 1-2 (juin 2009) : 397–99. http://dx.doi.org/10.1016/j.nima.2009.01.160.

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17

Giannini, F., E. Limiti, G. Orengo et R. Cardarelli. « An 8 channel GaAs IC front-end discriminator for RPC detectors ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 432, no 2-3 (août 1999) : 440–49. http://dx.doi.org/10.1016/s0168-9002(99)00376-9.

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18

Rodriguez, Saul, Jad G. Atallah, Ana Rusu, Li-Rong Zheng et Mohammed Ismail. « ARCHER : an automated RF-IC Rx front-end circuit design tool ». Analog Integrated Circuits and Signal Processing 58, no 3 (8 avril 2008) : 255–70. http://dx.doi.org/10.1007/s10470-008-9170-0.

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19

Baturitsky, M. A., O. V. Dvornikov, I. F. Emeliantchik, I. A. Golutvin, V. A. Mikhailov et A. V. Solin. « Front-end IC for a muon spectrometer with cathode strip chambers ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 378, no 3 (août 1996) : 577–82. http://dx.doi.org/10.1016/0168-9002(96)00440-8.

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20

Cha, Hyouk-Kyu. « A Highly-Integrated Low-Noise MICS Band Receiver RF Front-End IC with AC-Coupled Current Mirror Amplifier ». Journal of Circuits, Systems and Computers 28, no 01 (15 octobre 2018) : 1950010. http://dx.doi.org/10.1142/s0218126619500105.

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This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402–405[Formula: see text]MHz medical implant communications service (MICS) band applications using 0.18-[Formula: see text]m CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5[Formula: see text]dB conversion gain, 1.85[Formula: see text]dB noise figure, and IIP3 of [Formula: see text][Formula: see text]dBm while consuming 440[Formula: see text][Formula: see text]W from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29[Formula: see text]mm2.
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21

Cheng, Ming Yuan, Kwan Ling Tan, Wei Guo Chen, Rui Qi Lim, Maria Ramona B. Damalerio, Lei Yao, Peng Li, Yuan Dong Gu et Min Kyu Je. « Silicon-Based Multichannel Probe Integrated with a Front End Low Power Neural Recording IC for Acute Neural Recording ». Advanced Materials Research 849 (novembre 2013) : 189–94. http://dx.doi.org/10.4028/www.scientific.net/amr.849.189.

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This work presents a silicon-based multichannel probe integrated with a front end low power neural recording integrated circuit (IC) which is used in acute neural recording application. The low power neural recording IC contains 100-channel analog recording front-ends, 10 multiplexing successive approximation register ADCs, digital control modules and power management circuits. The 100-channel neural recording IC consumes 1.16-mW, making it the optimum solution for multi-channel neural recording systems. The neural recording IC and Si probe are integrated in a printed circuit board (PCB) which is fixed on the skull using dental resin. Digital neural signal is converted to analog signal and output by neural recording IC. The signal-to-noise ratio of neural recording signal can be increased through the reduction of interconnect length. The buckling strength of the fabricated probes was simulated using finite element analysis and measured by compression tester. The packaging method of 2D probe and neural recording IC was successfully demonstrated. The impedance of the assembled probe is also measured and discussed. To verify the functionality of Si probe integrated with neural recording IC, a pseudo neural signal acquisitions have been perform.
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22

Hermanowski, James, et Greg George. « The Role of Wafer Bonding in 3D Integration and Packaging ». International Symposium on Microelectronics 2010, no 1 (1 janvier 2010) : 000355–60. http://dx.doi.org/10.4071/isom-2010-wa1-paper1.

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There are numerous process integration schemes currently in place for the implementation of 3D-IC. Via first, via middle, via last along with back end of line (BEOL), front end of line (FEOL) and other variations of these approaches. This work will explore the role of wafer bonding, both permanent and temporary, in the fabrication of 3D-IC. Additionally, the materials and process flows used for these processes will be examined in detail.
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23

Baggini, B., P. Basedau, R. Becker, P. Bode, R. Burdenski, F. Esfahani, W. Groeneweg et al. « Baseband and Audio Mixed-Signal Front-End IC for GSM/EDGE Applications ». IEEE Journal of Solid-State Circuits 41, no 6 (juin 2006) : 1364–79. http://dx.doi.org/10.1109/jssc.2006.874343.

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24

Ng, K. A., et P. K. Chan. « A CMOS analog front-end IC for portable EEG/ECG monitoring applications ». IEEE Transactions on Circuits and Systems I : Regular Papers 52, no 11 (novembre 2005) : 2335–47. http://dx.doi.org/10.1109/tcsi.2005.854141.

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25

Tanaka, S., A. Nakajima, A. Nakagoshi, K. Washio, K. Takei, J. Nakagawa, Y. Kominami et T. Okabe. « Low noise, low-distortion front-end IC for 1.1-V paging receiver ». IEEE Transactions on Consumer Electronics 37, no 3 (1991) : 578–84. http://dx.doi.org/10.1109/30.85570.

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26

Sugayama, S., K. Kobayashi, T. Maruyama et K. Miyajima. « Development of high-performance FM front end IC with improved interference characteristic ». IEEE Transactions on Consumer Electronics 37, no 3 (1991) : 671–76. http://dx.doi.org/10.1109/30.85584.

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27

Zhao, Dongning, et Hyouk-Kyu Cha. « A 30-V transmitter front-end IC for ultrasound medical imaging applications ». Microelectronics Journal 44, no 3 (mars 2013) : 185–89. http://dx.doi.org/10.1016/j.mejo.2013.01.009.

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28

Bae, Seung Yong, Jong Do Lee, Eun Ju Choe et Gil Cho Ahn. « Low Distortion Analog Front-End for Digital Electret Microphone ». Applied Mechanics and Materials 475-476 (décembre 2013) : 1633–37. http://dx.doi.org/10.4028/www.scientific.net/amm.475-476.1633.

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This paper presents a low distortion analog front-end (AFE) circuit to process electret microphone output signal. A source follower is employed for the input buffer to interface electret microphone directly to the IC with level shifting. A single-ended to differential converter with output common-mode control is presented to compensate the common-mode variation resulted from gate to source voltage variation in the source follower. A replica stage is adopted to control the output bias voltage of the single-ended to differential converter. The prototype AFE circuit fabricated in a 0.35μm CMOS technology achieves 68.2dB peak SNDR and 79.9dB SFDR over an audio signal bandwidth of 20kHz with 2.5V supply while consuming 1.05mW.
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29

Liu, Dong-sheng, Xue-cheng Zou, Qiu-ping Yang et Ting-wen Xiong. « An analog front-end circuit for ISO/IEC 15693-compatible RFID transponder IC ». Journal of Zhejiang University-SCIENCE A 7, no 10 (octobre 2006) : 1765–71. http://dx.doi.org/10.1631/jzus.2006.a1765.

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Weinberger, H., A. Wiesbauer, C. Fleischhacker, J. Hauptmann, T. Ferianz, M. Staber, D. Straussnigg et B. Seger. « An ADSL-RT full-rate analog front end IC with integrated line driver ». IEEE Journal of Solid-State Circuits 37, no 7 (juillet 2002) : 857–65. http://dx.doi.org/10.1109/jssc.2002.1015683.

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Miyagawa, Y., Y. Miyamoto et K. Hagimoto. « 7 GHz bandwidth optical front-end circuit using GaAs FET monolithic IC technology ». Electronics Letters 25, no 19 (1989) : 1305. http://dx.doi.org/10.1049/el:19890873.

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32

Manfredi, P. F., I. Kipnis, A. Leona, L. Luo, E. Mandelli, M. Momayezi, M. Nyman et al. « The analog front-end section of the BaBar silicon vertex tracker readout IC ». Nuclear Physics B - Proceedings Supplements 61, no 3 (février 1998) : 532–38. http://dx.doi.org/10.1016/s0920-5632(97)00614-2.

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Michalowska-Forsyth, A. « Detection limits of front-end IC architectures for hybrid imaging X-ray detectors ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 912 (décembre 2018) : 167–73. http://dx.doi.org/10.1016/j.nima.2017.11.015.

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Seo, Il Won, Eun Sik Jung et Man Young Sung. « An Analog Front-End IC Design for 320 $\times$ 240 Microbolometer Array Applications ». IEEE Transactions on Circuits and Systems II : Express Briefs 62, no 11 (novembre 2015) : 1048–52. http://dx.doi.org/10.1109/tcsii.2015.2455391.

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35

Mandelli, E., L. Blanquart, P. Denes, K. Einsweiler, R. Marchesini, G. Meddeler, M. Ackers, P. Fischer, G. Comes et I. Peric. « Digital column readout architecture for the ATLAS pixel 0.25 μm front end IC ». IEEE Transactions on Nuclear Science 49, no 4 (août 2002) : 1774–77. http://dx.doi.org/10.1109/tns.2002.801528.

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Hamano, H., T. Yamamoto, Y. Nishizawa, Y. Oikawa, H. Kuwatsuka, A. Tahara, K. Suzuki et A. Nishimura. « 10 Gbit/s optical front end using Si-bipolar preamplifier IC, flipchip APD, and slant-end fibre ». Electronics Letters 27, no 18 (1991) : 1602. http://dx.doi.org/10.1049/el:19911004.

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37

ZEITZOFF, PETER M., JAMES A. HUTCHBY et HOWARD R. HUFF. « MOSFET AND FRONT-END PROCESS INTEGRATION : SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP ». International Journal of High Speed Electronics and Systems 12, no 02 (juin 2002) : 267–93. http://dx.doi.org/10.1142/s0129156402001241.

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The development of advanced MOSFETs for future IC technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal-gate electrodes, and perhaps the use of non-classical devices such as double-gate MOSFETs in the later stages of the ITRS.
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38

Huang, C. W. P., K. Christainsen, J. Allum, L. Lam, A. Chen, M. Doherty, M. McPartlin et B. Vaillancourt. « A Multimode SiGe BiCMOS 5-6 GHz Front-End IC that Enables 802.11ac Wave 2 and 802.11ax Wireless LAN Front-End Designs ». ECS Transactions 75, no 8 (23 septembre 2016) : 151–59. http://dx.doi.org/10.1149/07508.0151ecst.

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LI Bo, 李博, 魏廷存 WEI Ting-cun et 魏晓敏 WEI Xiao-min. « Design of analog front-end IC for capacitive touch screen using sparse readout strategy ». Chinese Journal of Liquid Crystals and Displays 32, no 1 (2017) : 23–28. http://dx.doi.org/10.3788/yjyxs20173201.0023.

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40

Tran, Trong-Hieu, Paul Chao et Ping-Chieh Chien. « The Front-End Readout as an Encoder IC for Magneto-Resistive Linear Scale Sensors ». Sensors 16, no 9 (2 septembre 2016) : 1416. http://dx.doi.org/10.3390/s16091416.

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41

Liu, Yun-Tao, Min Chen, Zhi-Chao Li, Ying Wang et Jie Chen. « A high dynamic range analog-front-end IC for electrochemical amperometric and voltammetric sensors ». Microelectronics Journal 46, no 8 (août 2015) : 716–22. http://dx.doi.org/10.1016/j.mejo.2015.05.009.

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42

Rofougaran, A., J. Y. C. Chang, M. Rofougaran et A. A. Abidi. « A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver ». IEEE Journal of Solid-State Circuits 31, no 7 (juillet 1996) : 880–89. http://dx.doi.org/10.1109/4.508199.

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Cho, Sunghun, Dongsoo Lee, Jinwook Choi, Seungwon Choi, Sanghyun Park, Juri Lee et Kang-Yoon Lee. « A Design of Signal Processing Analog Front-End IC for Automotive Piezo-Resistive Type Pressure Sensor ». Journal of the Institute of Electronics and Information Engineers 51, no 8 (25 août 2014) : 38–48. http://dx.doi.org/10.5573/ieie.2014.51.8.038.

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44

Peng, Li. « Research on Visualization Modeling of Plant for IC Packaging ». Advanced Materials Research 811 (septembre 2013) : 531–37. http://dx.doi.org/10.4028/www.scientific.net/amr.811.531.

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Plant model is critical data in enterprise information system, which is the basis of ERP and MES system. Combined with processing flow and physical layout of equipment in semiconductor industry, key technologies of visual plant model are introduced based on SP95 standard. Design ideas are described from perspectives of basic architecture, model building. The system is integrated, reconfigurable and can be implemented rapidly in front and back end of semiconductor Industry through secondary development and customization. Based on the system, a case of plant model was constructed to prove the validity of this theory in semiconductor industry.
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45

Ko, Seunghoon. « A Mutual Capacitance Touch Readout IC with Synchronization in Touch and Mobile Display Driving for High Refresh Rate AMOLED Panels ». Micromachines 12, no 8 (31 juillet 2021) : 922. http://dx.doi.org/10.3390/mi12080922.

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This paper presents a mutual capacitance touch readout IC architecture for 120 Hz high-refresh-rate AMOLED displays. In high-refresh-rate AMOLED panels, whole pixels in a horizontal line should be updated without any time-sharing with each other, leading to an amplified display noise on touch screen panel (TSP) electrodes. The proposed system architecture mitigates severe display noise by synchronizing the driving for the TSP and AMOLED pixel circuits. The proposed differential sensing technique, which is based on noise suppression in reference to mutual capacitance channels, minimizes common-mode display noise. In the front-end circuit, intrinsic circuit offset is cancelled by a chopping scheme, which correlates to the phase of the driving signals in the TSP driver and operating clocks of the front-end. Operating at a 120 Hz scan-rate, it reduces display noise by more than 11.6 dB when compared with the conventional single-ended TSP sensing method. With a built-in 130-nm CMOS, a prototype IC occupies an area of 8.02 mm2 while consuming 6.4-mW power from a 3.3 V analog voltage supply.
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46

OTSUJI, TAIICHI, KOICHI MURATA, KOICHI NARAHARA, KIMIKAZU SANO, EIICHI SANO et KIMIYOSHI YAMASAKI. « 20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS ». International Journal of High Speed Electronics and Systems 09, no 02 (juin 1998) : 399–435. http://dx.doi.org/10.1142/s0129156498000191.

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This paper describes recent advances in high-speed digital IC design technologies based on GaAs MESFETs for future high-speed optical communications systems. We devised new types of a data selector and flip-flops, which are key elements in performing high-speed digital functions (signal multiplexing, decision, demultiplexing, and frequency conversion) in front-end transmitter/receiver systems. Incorporating these circuit design technologies with state-of-the-art 0.12 μm gate-length GaAs MESFET process, we developed a DC-to-44-Gbit/s 2:1 data multiplexer IC, a DC-to 22-Gbit/s static decision IC, and a 20-to-40-Gbit/s dynamic decision IC. The fabricated ICs demonstrated record speed performances for GaAs MESFETs. Although further operating speed margin is still required, the GaAs MESFET is a potential candidate for 20- to 40-Gbit/s class applications.
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47

Sakalas, Mantas, Niko Joram et Frank Ellinger. « A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end ». International Journal of Microwave and Wireless Technologies 13, no 6 (18 février 2021) : 532–42. http://dx.doi.org/10.1017/s1759078721000118.

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AbstractThis study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$.
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Zhang, Chaoping, Robert Gallichan, David Budgett et Daniel McCormick. « A Capacitive Pressure Sensor Interface IC with Wireless Power and Data Transfer ». Micromachines 11, no 10 (27 septembre 2020) : 897. http://dx.doi.org/10.3390/mi11100897.

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This paper presents a capacitive pressure sensor interface circuit design in 180 nm XH018 CMOS technology for an implantable capacitive pressure sensor, which has a wireless power supply and wireless data transfer function. It integrates full-bridge rectifiers, shorting control switches, low-dropout regulators, bandgap references, analog front end, single slope analog to digital converter (ADC), I2C, and an RC oscillator. The low-dropout regulators regulate the wireless power supply coming from the rectifier and provide a stable and accurate 1.8 V DC voltage to other blocks. The capacitance of the pressure sensor is sampled to a discrete voltage by the analog front end. The single slope ADC converts the discrete voltage into 11 bits of digital data, which is then converted into 1 kbps serial data out by the I2C block. The “1” of serial data is modulated to a 500 kHz digital signal that is used to control the shorting switch for wireless data transfer via inductive back scatter. This capacitive pressure sensor interface IC has a resolution of 0.98 mmHg (1.4 fF), average total power consumption of 7.8 mW, and ±3.2% accuracy at the worst case under a −20 to 80 °C temperature range, which improves to ±0.86% when operated between 20 and 60 °C.
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Farooq, Umar, Matthew J. Maurer, Stephen M. Ansell, Tasha Lin, Grzegorz S. Nowakowski, Luis Porrata, David J. Inwards et al. « Treatment Patterns and Outcomes of DLBCL after Failure of Front-Line Immunochemotherapy ». Blood 126, no 23 (3 décembre 2015) : 2683. http://dx.doi.org/10.1182/blood.v126.23.2683.2683.

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Abstract Background: Diffuse large B-cell lymphoma (DLBCL) is curable for the majority of patients treated with anthracycline based immunochemotherapy (IC). However, up to 40% of patients will relapse or require retreatment of DLBCL and outcomes are poor in this setting. Here we examine the incidence, treatment patterns and outcomes of relapsed DLBCL in the R-CHOP era. Methods: Patients were prospectively enrolled in the University of Iowa / Mayo Clinic SPORE Molecular Epidemiology Resource (MER) within 9 months of diagnosis and followed for relapse, retreatment, and death. Clinical management at diagnosis and subsequent therapies were per treating physician. This analysis includes patients with DLBCL or primary mediastinal B-cell lymphoma (PMBCL) who underwent front-line anthracycline based IC; patients with primary CNS lymphoma or PTLD were excluded. All relapse and re-treatments were verified by medical record review. Response to front-line therapy was retrospectively classified per 2007 Revised Response Criteria for Malignant Lymphoma from available clinical and radiology records. Unplanned consolidative radiation (RT) without biopsy proven disease after achieving PR from IC (N=21) was not classified as a relapse. Results: 1039 patients with newly diagnosed DLBCL or PMBCL and treated with IC were enrolled in the MER from 2002-2012. Median age at diagnosis was 62 years (range 18-92) and 577 patients (56%) were male. 647 patients (63%) had stage III/IV disease and IPI at diagnosis was 0-1 in 350 patients (34%), 2 in 305 patients (29%), 3 in 250 patients (24%) and 4-5 in 134 patients (13%). At a median follow-up of 59 months (range 1-148), 258 patients had relapse or retreatment of DLBCL of which 184 (71%) died. Incidence of relapse was 21.7% (95% CI: 19.3%-24.4%) at 2 years and 25.5% (95% CI: 22.9%-28.5%) at 5 years. In addition, the incidence of lymphoma related death without documented relapse or retreatment was 4.7% (95% CI: 3.6%-6.2%) at 2 years. At first relapse, 174 patients (67% of relapsed) received platinum based salvage therapy with 90 (52%) subsequently proceeding to autologous stem cell transplant (ASCT). 22 patients received CNS directed systemic therapy at relapse with 9 (41%) proceeding to transplant, and 43 received non-platinum-based salvage systemic therapy with 7 proceeding to transplant (17%), 15 patients received RT only as 2nd line therapy, and 4 were untreated. At a median follow-up of 56 months (range 6-121) post-transplant, 39 of 107 patients who underwent transplant remain in remission with a 2-year post-transplant progression-free survival of 45% (95% CI 37%-56%). Response to front-line IC was predictive of post-relapse outcome. Survival post-relapse was superior in the 162 patients with responsive disease (CR or PR) at the end of front-line IC (median OS 21.0 months) compared to the 88 patients who had stable or progressive disease (median OS 6.8 months, HR = 2.33, 95% CI: 1.73-3.14 p<0.0001). Transient response in midst of front-line IC was similar to no response. Patients achieving a CR or PR to front-line IC were more likely to proceed to ASCT at relapse (55%) compared to patients with either SD or PD at the end of front-line IC (25% and 17% respectively, p<0.0001). Other factors associated with poor survival at first relapse were relapse within 12 months of diagnosis (HR = 2.24, 95% CI: 1.57-3.18, p<0.0001), IPI at diagnosis of 3-5 (HR=1.51, 95% CI: 1.13-2.03, p=0.0058), and age > 60 (HR =1.51, 95% CI: 1.12-2.03, p=0.0064). There was no difference in survival at first relapse by cell of origin (HR = 1.13, 95% CI: 0.74-1.72, p=0.59). Conclusions: Most patients undergo therapy after relapsed/refractory DLBCL but only one-third receive ASCT. Outcomes following all treatments for relapsed/refractory DLBCL remain poor. Factors associated with adverse outcomes include refractory to front-line therapy, early relapse, baseline IPI and advanced age. These outcomes provide relevant historical control for the many novel agents being tested in this unmet need. Figure 1. Figure 1. Disclosures Farooq: Kite Pharma: Research Funding. Maurer:Kite Pharma: Research Funding. Cerhan:Kite Pharma: Research Funding. Link:Genentech: Consultancy, Research Funding; Kite Pharma: Research Funding. Thompson:Kite Pharma: Research Funding.
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Kim, Hyung Seok, et Hyouk-Kyu Cha. « An Ultra Low-power Low-noise Neural Recording Analog Front-end IC for Implantable Devices ». JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18, no 4 (31 août 2018) : 454–60. http://dx.doi.org/10.5573/jsts.2018.18.4.454.

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