Bibliographies thématiques / Field-effect doping

Littérature scientifique sur le sujet « Field-effect doping »

Auteur : Grafiati

Publié le 14 mars 2023

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Articles de revues sur le sujet "Field-effect doping"

Noll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer et Lothar Frey. « Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors ». Materials Science Forum 778-780 (février 2014) : 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.

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A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too.

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Huseynova, Gunel, et Vladislav Kostianovskii. « Doped organic field-effect transistors ». Material Science & ; Engineering International Journal 2, n^o 6 (5 décembre 2018) : 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect transistors. The description of the issues regarding charge carrier transport and other optoelectronic properties of organic semiconductors is also provided. The doping agents and methods commonly applied for organic semiconductors along with their fundamental mechanisms are introduced.

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Ryu, Min-Yeul, Ho-Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung-Pil Ko, Minju Shin, Junghwan Huh et Gyu-Tae Kim. « Triethanolamine doped multilayer MoS2 field effect transistors ». Physical Chemistry Chemical Physics 19, n^o 20 (2017) : 13133–39. http://dx.doi.org/10.1039/c7cp00589j.

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KUBOZONO, Yoshihiro, Yumiko KAJI, Keiko OGAWA, Yasuyuki SUGAWARA, Ritsuko EGUCHI, Koki AKAIKE, Takashi KAMBE et Akihiko FUJIWARA. « Field-effect Carrier Doping to Organic Molecular Crystals ». Hyomen Kagaku 32, n^o 1 (2011) : 27–32. http://dx.doi.org/10.1380/jsssj.32.27.

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Goswami, Yogesh, Pranav Asthana, Shibir Basak et Bahniman Ghosh. « Junctionless Tunnel Field Effect Transistor with Nonuniform Doping ». International Journal of Nanoscience 14, n^o 03 (19 mai 2015) : 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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Riederer, Felix, Thomas Grap, Sergej Fischer, Marcel R. Mueller, Daichi Yamaoka, Bin Sun, Charu Gupta, Klaus T. Kallis et Joachim Knoch. « Alternatives for Doping in Nanoscale Field-Effect Transistors ». physica status solidi (a) 215, n^o 7 (30 janvier 2018) : 1700969. http://dx.doi.org/10.1002/pssa.201700969.

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Günther, Alrun A., Michael Sawatzki, Petr Formánek, Daniel Kasemann et Karl Leo. « Contact Doping for Vertical Organic Field‐Effect Transistors ». Advanced Functional Materials 26, n^o 5 (14 décembre 2015) : 768–75. http://dx.doi.org/10.1002/adfm.201504377.

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Li, Jingqi, Xiaofeng Chen, Gheorghe Iordache, Nini Wei et Husam N. Alshareef. « Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on p-GaAs ». Nanoscience and Nanotechnology Letters 11, n^o 9 (1 septembre 2019) : 1239–46. http://dx.doi.org/10.1166/nnl.2019.2998.

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A semiclassical method is used to simulate the characteristics of vertical carbon nanotube fieldeffect transistors on p-GaAs. The calculation results show unique transfer characteristics that depend on the sign of the drain voltage. The transistors exhibit p-type characteristics and ambipolar characteristics for a positive drain voltage and a negative drain voltage, respectively. The p-type characteristics do not change with the GaAs bandgap and doping level, because the hole current from the single-walled carbon nanotube (SWCNT) and drain side dominates the whole current. In contrast, the ambipolar characteristics are greatly influenced by the GaAs bandgap and doping level. Only the electron current in the ambipolar characteristics increases as the GaAs bandgap decreases. Increasing the p-type doping of GaAs increases the p-branch current and decreases the electron current (n-branch) of the ambipolar characteristics. The effects of the SWCNT bandgap and doping level are different from those of GaAs, and the impact of SWCNT on the p-type characteristics is much greater than the impact on the ambipolar characteristics. The p-type current increases as the SWCNT bandgap decreases.

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Luo, Xuyi, Kraig Andrews, Tianjiao Wang, Arthur Bowman, Zhixian Zhou et Ya-Qiong Xu. « Reversible photo-induced doping in WSe2 field effect transistors ». Nanoscale 11, n^o 15 (2019) : 7358–63. http://dx.doi.org/10.1039/c8nr09929d.

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We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe₂) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm⁻²).

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Wen, Xiao Wei, Chu De Feng, Li Dong Chen et Shi Ming Huang. « Effect of Different Doping on the Structure and Field-Stability of PMNT Ceramics ». Key Engineering Materials 336-338 (avril 2007) : 36–38. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.36.

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Effect of co-doping two different elements and incorporating SrBi2Nb2O9 (SBN) on structure and field-stability of dielectric properties in PMNT ceramics were investigated. Single-phase cubic Perovskite structure is more easily obtained by appropriate co- doping of La3+ and Zn2+. X-ray diffraction patterns of PMNT/SBN composite showed that there is no SBN grains in PMNT/SBN as a secondary phase. Co-doping of La3+ and Zn2+ as well as incorporation of SBN markedly increased the field-stability of dielectric constant. The mechanism of improving field-stability was tentatively discussed.

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Thèses sur le sujet "Field-effect doping"

Nukala, Prathyusha. « Development of Silicon Nanowire Field Effect Transistors ». Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103364/.

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An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.

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Liu, Shiyi. « Understanding Doped Organic Field-Effect Transistors ». Kent State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301.

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Randell, Heather Eve. « Applications of stress from boron doping and other challenges in silicon technology ». [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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Periwal, Priyanka. « VLS growth and characterization of axial Si-SiGe heterostructured nanowire for tunnel field effect transistors ». Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT045.

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L'augmentation des performances des circuits intégrés s'est effectué durant les trentes dernières années par la miniaturisation du composant clé à savoir le transistor MOSFET. Cette augmentation de la densité d'intégration se heurte aujourd'hui à plusieurs verrous, notamment celui de la puissance consommée qui devient colossale. Il devient alors nécessaire de travailler sur de nouveaux composants, les transistors à effet tunnel, où les porteurs sont injectés par effet tunnel bande à bande permettant de limiter considérablement la puissance consommée en statique. Les nanofils semiconducteurs sont de bons candidats pour être intégrés comme canaux de ces nouveaux composants de part la possibilité de moduler leur gap et leur conductivité au cours de la croissance. Dans ce contexte, cette thèse traite de la croissance d'hétérostructures axiales Si/Si1-xGex élaborés par croissance VLS par RP-CVD. Tout d'abord, nous identifions les conditions de croissance pour réaliser des interface Si/Si1-xGex et Si1-xGex/Si abruptes. Les deux heterointerfaces sont toujours asymétrique quelle que soit la concentration en Ge ou le diamètre des nanofils ou des conditions de croissance. Deuxièmement, nous étudions les problématiques impliquées par l'ajout d'atomes dopants. Nous discutons de l'influence des paramètres de croissance (le rapport flux de gaz (Si / Ge), et la pression partielle de dopants) sur la morphologie des nanofils et la concentration de porteurs. Grâce à cette étude, nous avons été capable de faire croitre des hétérojonctions P-I-N. Troisièmement, nous présentons une technique basée sur la microscopie à sonde locale pour caractériser les hétérojonctions
After more than 30 years of successful scaling of MOSFET for increasing the performance and packing density, several limitations to further performance enhancements are now arising, power dissipation is one of the most important one. As scaling continues, there is a need to develop alternative devices with subthreshold slope below 60 mV/decade. In particular, tunnel field effect transistors, where the carriers are injected by quantum band to band tunneling mechanism can be promising candidate for low-power design. But, such devices require the implementation of peculiar architectures like axial heterostructured nanowires with abrupt interface. Using Au catalyzed vapor-liquid-solid synthesis of nanowires, reservoir effect restrains the formation of sharp junctions. In this context, this thesis addresses the growth of axial Si and Si1-xGex heterostructured nanowire with controlled interfacial abruptness and controlled doping using Au catalyzed VLS growth by RP-CVD. Firstly, we identify the growth conditions to realize sharp Si/Si1-xGex and Si1-xGex/Si interfacial abruptness. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter or growth conditions. Secondly, we study the problematics involved by the addition of dopant atoms and focus on the different approaches to realize taper free NWs. We discuss the influence of growth parameters (gas fluxes (Si or Ge), dopant ratio and pressure) on NW morphology and carrier concentration. With our growth process, we could successfully grow p-I, n-I, p-n, p-i-n type junctions in NWs. Thirdly, we present scanning probe microscopy to be a potential tool to delineate doped and hetero junctions in these as-grown nanowires. Finally, we will integrate the p-i-n junction in the NW in omega gate configuration

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Sundararajan, Abhishek. « A STUDY ON ATOMICALLY THIN ULTRA SHORT CONDUCTING CHANNELS, BREAKDOWN, AND ENVIRONMENTAL EFFECTS ». UKnowledge, 2015. http://uknowledge.uky.edu/physastron_etds/27.

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We have developed a novel method of producing ultra-short channel graphene field effect devices on SiO2 substrates and have studied their electrical transport properties. A nonlinear current behavior is observed coupled with a quasi-saturation effect. An analytical model is developed to explain this behavior using ballistic transport, where the charge carriers experience minimal scattering. We also observe multilevel resistive switching after the device is electrically stressed. In addition, we have studied the evolution of the electrical transport properties of few-layer graphene during electrical breakdown. We are able to significantly increase the time scale of break junction formation, and we are able to observe changes occurring close to breakdown regime. A decrease in conductivity along with p−type doping of the graphene channel is observed as the device is broken. The addition of structural defects generated by thermal stress caused by high current densities is attributed to the observed evolution of electrical properties during the process of breakdown. We have also studied the effects of the local environment on graphene devices. We encapsulate graphene with poly(methyl methacrylate) (PMMA) polymer and study the electrical transport through in situ measurements. We have observed an overall decrease in doping level after low-temperature annealing in dry-nitrogen, indicating that the solvent in the polymer plays an important role in doping. For few-layer encapsulated graphene devices, we observe stable n−doping. Applying the solvent onto encapsulated devices demonstrates enhanced hysteretic switching between p and n−doped states.

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Krishnan, Bharat. « DEVELOPMENT OF SIMULATION FRAMEWORK FOR THE ANALYSIS OF NON-IDEAL EFFECTS IN DOPING PROFILE MEASUREMENT USING CAPACITANCE ? VOLTAGE TECHNIQUE ». MSSTATE, 2005. http://sun.library.msstate.edu/ETD-db/theses/available/etd-04082005-092339/.

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Silicon Carbide devices are proving to be most promising for high power and high-temperature application in recent times. Efficient and accurate characterization of the device characteristics is key to the fabrication of high quality devices and reproduction of the quality of the devices fabricated. Capacitance-Voltage profiling is one of the most commonly used techniques to measure the doping profiles of semiconductors. However, interpretation of C-V profiling in the presence of traps in the material becomes complicated. Various complications arising from compensation between donors and acceptors, partial ionization of dopants and presence of deep level impurities could yield anomalous measured profile. Silicon Carbide being a wide bandgap semiconductor, many impurities commonly found such as Boron and Aluminum are not completely ionized at Room temperature. This leads to complications in calculating doping profiles when the trap levels are deeper. Other complications arising due to series resistance effect and diode edge effect may also affect the measured profile. Accounting for these complications may be difficult by mere observation of the measured profile. Simulation can be an excellent tool to extract parameters of interest from experimental results that are influenced by non-ideal effects. Fitting of the experimentally obtained data with simulated profile using specific models may be a useful technique to quantitatively account for the deviations from the actual profiles.

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Shin, Nara [Verfasser], Karl [Gutachter] Leo, Stefan [Gutachter] Mannsfeld et Sebastian [Gutachter] Reineke. « Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes / Nara Shin ; Gutachter : Karl Leo, Stefan Mannsfeld, Sebastian Reineke ». Dresden : Technische Universität Dresden, 2019. http://d-nb.info/1230578196/34.

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Yoo, Kyung-Dong. « Two-dimensional dopant profiling for shallow junctions by TEM and AFM ». Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342122.

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Winkler, Felix [Verfasser], Johann W. [Gutachter] Bartha et Christian [Gutachter] Wenger. « Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System / Felix Winkler ; Gutachter : Johann W. Bartha, Christian Wenger ». Dresden : Technische Universität Dresden, 2020. http://d-nb.info/122731227X/34.

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Wehrfritz, Peter. « Herstellung und Charakterisierung von Feldeffekttransistoren mit epitaktischem Graphen ». Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-172853.

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Als Graphen bezeichnet man eine einzelne freistehende Lage des Schichtkristalls Graphit. Im Gegensatz zur mechanischen Isolation von Graphit bietet die Züchtung auf Siliziumkarbid eine Methode zur großflächigen Herstellung von Graphen. Aufgrund der besonderen physikalischen Eigenschaften werden für Graphen viele verschieden Einsatzmöglichkeiten in diversen Bereichen prognostiziert. Mit seiner hohen Ladungsträgerbeweglichkeit ist Graphen besonders als Kanalmaterial für Feldeffekttransistoren (FET) interessant. Allerdings muss hierfür unter anderem ein geeignetes FET-Isolatormaterial gefunden werden. In dieser Arbeit wird eine detaillierte, theoretische Beschreibung der Graphen-FETs vorgestellt, die es erlaubt die steuerspannungsabhängige Hall-Konstante zu berechnen. Mit der dadurch möglichen Analyse können wichtige Kenngrößen, wie z. B. die Grenzflächenzustandsdichte des Materialsystems bestimmt werden. Außerdem wurden zwei Methoden zur Isolatorabscheidung auf Graphen untersucht. Siliziumnitrid, welches mittels plasmaangeregter Gasphasenabscheidung aufgetragen wurde, zeichnet sich durch seine n-dotierende Eigenschaft aus. Damit ist es vor allem für quasi-freistehendes Graphen auf Siliziumkarbid interessant. Bei der zweiten Methode handelt es sich um einen atomaren Schichtabscheidungsprozess, der ohne eine Saatschicht auskommt. An beiden Graphen- Isolator-Kombinationen wurde die neue Charakterisierung mittels der Hall-Datenanalyse angewandt.

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Livres sur le sujet "Field-effect doping"

Fred, Schubert E., dir. Delta-doping of semiconductors. Cambridge : Cambridge University Press, 1996.

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Schubert, E. F. Delta-doping of Semiconductors. Cambridge University Press, 2005.

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Panigrahi, Muktikanta, et Arpan Kumar Nayak. Polyaniline based Composite for Gas Sensors. IOR PRESS, 2021. http://dx.doi.org/10.34256/ioriip212.

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In this research work, we have demonstrated the synthesis, spectroscopic characteristics, thermal behaviour and DC conductivity of a few nanostructured composites, substituted conducting polymers (ICPs) and composites of ICPs. The physical properties of aforementioned composites are significantly changed by the doping with HCl, H2SO4, HNO3, H3PO4, or acrylic acid. The charge transport properties of these polymeric materials have been studied in detail because of their potential application in gas sensors. In the current work, varieties of conducting polymer based materials such as PANI-ES/Cloisite 20A nanostructured composite, acrylic acid (AA) doped PANI polymer, N-substituted conducting polyaniline polymer, DL−PLA/PANI-ES composites, poly methyl methacrylate (PMMA) based polyaniline composite, and inorganic acid doped polyaniline are sucessfuly synthesized using aniline/aniline hydrochloride as precursors in acidic medium. Particularly, AA based synthesised PANI polymer was found with higher solubility The spectroscopic, thermal stability, enthalpy of fusion, room temperature DC conductivity and temperature dependent DC conductivity measurements with and without magnetic was carried out with as-synthesized materials. The FTR/ATR−FTIR spectra indicated the presence of different functional groups in the as-prepared composite materials. The UV−Visible absorption spectroscopic analysis showed the presence of polaron band suggesting PANI-ES form. The Room temperature DC conductivity, temperature variation DC conductivity (in presence and absence of magnetic field), and magnetoresistance (MR) of as-prepared conducting polyaniline based were analysed. The highest room temperature DC conductivity value was obtained from H2SO4 doped based composite materials and all prepared conductive composites were followed ohms law. The low temperature DC conductivity was carried out in order to study the semiconducting nature of prepared materials. The Mott type VRH model was found to be well fitted the conductivity data and described the density of states at the Fermi level which is constant in this temperature range. From MR plots, a negative MR was observed, which described the quantum interference effect on hopping conduction. We discuss different gas analytes i.e., NO2, LPG, H2, NH3, CH4, and CO of conducting polymer based materials.

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Chapitres de livres sur le sujet "Field-effect doping"

Raushan, Mohd Adil, Mohd Mustaqeem, Shameem Ahmad et Mohd Jawaid Siddiqui. « Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor ». Dans Proceedings of 6th International Conference on Recent Trends in Computing, 189–96. Singapore : Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4501-0_18.

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Dutta, Ritam, et Nitai Paitya. « Effect of Pocket Intrinsic Doping on Double and Triple Gate Tunnel Field Effect Transistors ». Dans Lecture Notes in Electrical Engineering, 249–58. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0829-5_25.

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Wen, Xiao Wei, Chu De Feng, Li Dong Chen et Shi Ming Huang. « Effect of Different Doping on the Structure and Field-Stability of PMNT Ceramics ». Dans Key Engineering Materials, 36–38. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.36.

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Tochihara, Shinjiro, Masami Mashino, Hiroshi Yasuoka, Hiromasa Mazaki, Minoru Osada et Masato Kakihana. « Effect of Ca Doping on the Lower Critical Field of YBa2Cu3O7-d Single Crystals ». Dans Advances in Superconductivity XI, 267–70. Tokyo : Springer Japan, 1999. http://dx.doi.org/10.1007/978-4-431-66874-9_58.

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« Junctionless Devices Without Any Chemical Doping ». Dans Junctionless Field-Effect Transistors, 281–325. Wiley, 2019. http://dx.doi.org/10.1002/9781119523543.ch7.

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A. Islam, Rashed. « Doping Effect on Piezoelectric, Magnetic and Magnetoelectric Properties of Perovskite—Ferromagnetic Magnetoelectric Composites ». Dans Piezoelectric Actuators - Principles, Design, Experiments and Applications [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95604.

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This chapter explains the effect of compositional modification on the magnetoelectric coefficient in sintered piezoelectric – magnetostrictive composites. It was found that 15 at% doping of Pb(Zn1/3Nb2/3)O3 [PZN] in Pb(Zr0.52Ti0.48)O3 [PZT] enhances the piezoelectric and magnetoelectric properties of a PZT – 20 at% Ni0.8Zn0.2Fe2O4 [NZF] composite. The effect of doping on the ferromagnetic phase was also investigated. With increases in Zn concentration, it was found that the coercive field and Curie temperature of Ni(1-x)ZnxFe2O4 [NZF] decreases, while its saturation magnetization has a maxima at 30 mole% Zn. X-ray diffraction revealed that the lattice constant of NZF increases from 8.32 Å for 0 at% Zn to 8.39 Å for 50 at% Zn. The magnetoelectric coefficient was found to have a maxima of 144 mV/cm.Oe at 30 at% Zn. To understand better, the effect of 40% (by mole) Zn substitution on structural, piezoelectric, ferromagnetic and magnetoelectric properties of Pb(Zr0.52Ti0.48)O3 - CoFe2O4 (PZT - CFO) sintered composite is also explained. X-ray diffraction of Co0.6Zn0.4Fe2O4 (CZF) showed the shift in almost all diffraction peaks to lower diffraction angle confirming the increase in lattice parameter in all three direction from 8.378 (for CFO) to 8.395 Å for (Co,Zn)Fe2O4 (CZF). SEM and TEM results showed defect structure (cleavage, twins, strain fields) in the CZF particle, which is a clear indication of misfit strain developed due to lattice expansion. Magnetic properties measured over temperature (5 K – 1000 K) showed increased magnetization but lower magnetic Curie temperature in PZT - CZF particle. Magnetoelectric coefficient measured as function of ferrite concentration showed an increase of more than 100% after doping the CFO phase with 40% Zn. This enhancement can be attributed to increase in the lattice strain, magnetic permeability and decrease in coercivity.

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Kresin, Vladimir Z., Sergei G. Ovchinnikov et Stuart A. Wolf. « Materials I : High-Tc Copper Oxides ». Dans Superconducting State, 228–80. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198845331.003.0005.

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This chapter focuses on the cuprates, which are uniquely interesting superconducting compounds due to their high Tc, peculiar properties, and potential for applications. The history of the discovery of this very unusual class of superconductors is described, together with the properties and key theoretical concepts that can be used to understand their superconducting and normal behaviours. This chapter contains a description of some very key aspects of these materials: their very unusual phase diagram, where doping takes the compounds from antiferromagnetic insulators to high-temperature superconductors and finally to metallic conductivity; their very anomalous upper critical field Hc2; the symmetry of their order parameter; and the unusual isotope effect on Tc and penetration depth. There are two main approaches to the issue of the origin of high Tc in the cuprates: the phonon mechanism, with the strong impact of the polaronic effect, and a mechanism based on strong correlation effects.

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Tiwari, Sandip. « Light interactions with semiconductors ». Dans Semiconductor Physics, 454–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0012.

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This chapter examines how electromagnetic waves—light, photons—interact with semiconductors through coupling between the electromagnetic wave and dipoles of various kinds and analyzed via a dipole interaction Hamiltonian. Phenomena in the energy range of micro eV to several eVs are explored, stressing surface interactions, absorption, emission and luminescence. The first involves coupled plasmon interactions. Absorption and emission arise across energy and through multiple mechanisms. Free carrier processes are pronounced for low energy. Direct electron-photon interactions—a direct transition—can involve allowed transitions and forbidden transitions across the gap. Indirect transitions of both these varieties can arise in phonon-assisted processes. Oscillator strength is fleshed out. Field dependence, doping dependence and temperature dependence are analyzed, broadening the discussion to the Franz-Keldysh effect as well as dependence due to impurities, excitons, plasmons and crystal oscillations, to unravel the dielectric function and reflectivity’s behavior at high frequencies and restrahlen often observed.

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Sharma, Sakshi, A. K. Shrivastav, Anjali Oudhia et Mohan L. Verma. « The Advancement in Research and Technology with New Kinds of Hollow Structures ». Dans Advanced Materials and Nano Systems : Theory and Experiment (Part-1), 213–33. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050745122010014.

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Hollow structures are one of the most highlighted topics of research in nanotechnology. These hollow structures can be in the form of nanospheres, nanocages, nanorods, nano boxes, etc. They can be single-layered or multi-layered, with different kinds of doping. All these variations in hollow structures open up various fields of research, from biomedicines to optoelectronics. With the discovery of hollow structures like carbon buckyball, nanotubes, etc., several application-based -research was carried out, both theoretically as well as experimentally. Modifications are observed in the properties of a material when formed in a hollow shape like better conductivity, trapping capacity, catalytic effect, etc. These properties were the highlight of the studies. This field is still under investigation, and there is a lot of scope for new possibilities in the future. This chapter covers the basic information about different kinds of hollow structures like carbon buckyball, variations in their properties, along with recent developments and their applications. This chapter also includes detailed research about buckyball structures of ZnO, ZnS, and Al-doped ZnO using simulations with their comparative study and future applications.

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Shams, Shamsiya, et B. Bindhu. « Two-dimensional Functionalized Hexagonal Boron Nitride (2D h-BN) Nanomaterials for Energy Storage Applications ». Dans Current and Future Developments in Nanomaterials and Carbon Nanotubes, 119–40. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050714122030010.

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The conservation of energy and the materials utilized for its storage have gathered a wide range of interest nowadays. Two-dimensional hexagonal boron nitride (2D h-BN), often termed as ‘white graphene’, exhibits various interesting properties and hence, acts as a promising future candidate for energy sustainment and storage. This material assures exquisite thermal and chemical stability, high chemical inertness, exotic mechanical strength, and good optoelectrical properties. 2D h-BN undergoes physical and chemical modulations, and their properties could be tuned, making them more appropriate for energy storage applications. They could also be incorporated with other 2D materials like graphene, molybdenum disulphide (MoS2 ), etc., to improve their properties. It is thus thoroughly and systematically studied for its further usage in field effect transistors (FETs), UV detecting devices and emitters, photoelectric and microelectronic devices, tunnelling devices, etc. The comprehensive overview provides an insight into 2D h-BN and its synthesis routes developed within the past years. The different major properties exhibited by 2D h-BN are also reviewed. Hybridization and doping processes are also discussed. Functionalised h-BN and its utilisation in different energy storage applications are elaborated and reviewed. This review chapter will give a quick glance and perspectives on 2D h-BN and its extraordinary characteristic features that could enhance their usage in energy conversion, storage, and utilisation applications.

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Actes de conférences sur le sujet "Field-effect doping"

Radha Krishnan, Raj Kishen, Shiyi Liu, Drona Dahal, Pushpa R. Paudel et Bjorn Lussem. « Organic field effect transistors with bulk low doping ». Dans Organic and Hybrid Field-Effect Transistors XX, sous la direction de Oana D. Jurchescu et Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2594721.

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Moule, Adam J., Tucker L. Murrey, Ian E. Jacobs, Zaira I. Bedolla-Valdez, Jan Saska, Goktug A. Gonel, Alice Fergerson et al. « Understanding the driving force for solution molecular doping ». Dans Organic and Hybrid Field-Effect Transistors XX, sous la direction de Oana D. Jurchescu et Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2595855.

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Nielsen, Christian. « Charge transport and doping in structurally modified polythiophenes (Conference Presentation) ». Dans Organic and Hybrid Field-Effect Transistors XVIII, sous la direction de Oana D. Jurchescu et Iain McCulloch. SPIE, 2019. http://dx.doi.org/10.1117/12.2528329.

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Singh, Prabhat, Dip Prakash Samajdar et Dharmendra Singh Yadav. « Doping and Dopingless Tunnel Field Effect Transistor ». Dans 2021 6th International Conference for Convergence in Technology (I2CT). IEEE, 2021. http://dx.doi.org/10.1109/i2ct51068.2021.9418076.

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Vijayvargiya, Vikas, et Santosh Vishvakarma. « Effect of doping profile on tunneling field effect transistor performance ». Dans 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481376.

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Lin, Yu-Ming, Damon B. Farmer, George S. Tulevski, Sheng Xu, Roy G. Gordon et Phaedon Avouris. « Chemical Doping of Graphene Nanoribbon Field-Effect Devices ». Dans 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800721.

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Liu, Dexing, Weihong Huang, Qinqi Ren et Min Zhang. « A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors ». Dans 2021 IEEE 21st International Conference on Nanotechnology (NANO). IEEE, 2021. http://dx.doi.org/10.1109/nano51122.2021.9514302.

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Manavizadeh, N., F. Raissi et E. Asl Soleimani. « The effect of the doping concentration on nanoscale field effect diode performance ». Dans 2011 12th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2011. http://dx.doi.org/10.1109/ulis.2011.5757992.

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Lim, B. S., M. K. Md Arshad, Noraini Othman, M. F. M. Fathil, M. F. Fatin et U. Hashim. « The impact of channel doping in junctionless field effect transistor ». Dans 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920808.

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Yadav, Dharmendra Singh, Dheeraj Sharma, Rahul Agrawal, Gaurav Prajapati, Sukeshni Tirkey, Bhagwan Ram Raad et Varun Bajaj. « Temperature based performance analysis of doping-less tunnel field effect transistor ». Dans 2017 International Conference on Information, Communication, Instrumentation and Control (ICICIC). IEEE, 2017. http://dx.doi.org/10.1109/icomicon.2017.8279131.

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