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Littérature scientifique sur le sujet « Extended defect »

Auteur : Grafiati
Publié le 9 mars 2023
Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "Extended defect"

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Antonelli, A., J. F. Justo et A. Fazzio. « Point defect interactions with extended defects in semiconductors ». Physical Review B 60, no 7 (15 août 1999) : 4711–14. http://dx.doi.org/10.1103/physrevb.60.4711.

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Townsend, P. D., et A. P. Rowlands. « Extended Defect Models for Thermoluminescence ». Radiation Protection Dosimetry 84, no 1 (1 août 1999) : 7–12. http://dx.doi.org/10.1093/oxfordjournals.rpd.a032800.

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van Brunt, Edward, Albert Burk, Daniel J. Lichtenwalner, Robert Leonard, Shadi Sabri, Donald A. Gajewski, Andrew Mackenzie, Brett Hull, Scott Allen et John W. Palmour. « Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices ». Materials Science Forum 924 (juin 2018) : 137–42. http://dx.doi.org/10.4028/www.scientific.net/msf.924.137.

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This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to defect content. 1200 V class Junction Barrier Schottky (JBS) diodes and MOSFETs were examined in this manner; higher voltage 3.3 kV class devices were examined as well. 3C inclusions and triangular defects, as well as heavily decorated substrate scratches, were found to be device killing defects. Other defects were found to have negligible impacts on device yield, even in the case of extremely high threading dislocation content. Defect impacts on device reliability was explored on MOS-gate structures, as well as long-term device blocking tests on both MOSFETs and JBS diodes. Devices that passed on-wafer electrical parametric tests were found to operate reliably in these tests, regardless of defect content.
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Kulkarni, SS, AK Bewoor et RB Ingle. « Vibration signature analysis of distributed defects in ball bearing using wavelet decomposition technique ». Noise & ; Vibration Worldwide 48, no 1-2 (janvier 2017) : 7–18. http://dx.doi.org/10.1177/0957456517698318.

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The analysis of vibration signals acquired from a ball bearing with an extended type of distributed defects is carried out using wavelet decomposition technique. The influence of artificially generated defect and its location on outer and inner race of the ball bearing is observed using vibration data acquired from bearing housing. The comparison of diagnostic information from fast Fourier transform and time frequency decomposition method is made for inner and outer race of ball bearing with single as well as multiple extended defects. To decompose vibration signal acquired from bearing, db04 wavelet technique was implemented. It is observed that impulses appear with a time period corresponding to characteristic defect frequencies. The results observed from wavelet decomposition technique and fast Fourier transform reveal that the characteristic defect frequency is quite consistent even with change in location of defect. The extended type of distributed defects in the ball bearings can also be effectively diagnosed with the help of wavelet decomposition technique and fast Fourier transform.
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Shiryaev, Andrei A., Fabio Masiello, Jurgen Hartwig, Igor N. Kupriyanov, Tamzin A. Lafford, Sergey V. Titkov et Yuri N. Palyanov. « X-ray topography of diamond using forbidden reflections : which defects do we really see ? » Journal of Applied Crystallography 44, no 1 (24 décembre 2010) : 65–72. http://dx.doi.org/10.1107/s0021889810049599.

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Natural and synthetic diamonds with various concentrations and types of point and extended defect were investigated using X-ray topography employing allowed (111, 004) and forbidden (222) reflections. On the topographs of the forbidden reflections, weak stress fields from lattice imperfections and extended defects are readily observed. Comparison of the topographs with IR maps of the distribution of point defects suggests that certain types of point defect may increase the structure factors of the forbidden reflections.
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Leonard, Robert, Matthew Conrad, Edward Van Brunt, Jeffrey Giles, Ed Hutchins et Elif Balkas. « From Wafers to Bits and Back again : Using Deep Learning to Accelerate the Development and Characterization of SiC ». Materials Science Forum 1004 (juillet 2020) : 321–27. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.321.

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A non-destructive, fast and accurate extended defect counting method on large diameter SiC wafers is presented. Photoluminescence (PL) signals from extended defects on 4H-SiC substrates were correlated to the specific etch features of Basal Plane Dislocations (BPDs), Threading Screw Dislocations (TSDs), and Threading Edge Dislocations (TED). For our non-destructive technique (NDT), automated defect detection was developed using modern deep convolutional neural networks (DCNN). To train a robust network, we used our large volume data set from our selective etch method of 4H-SiC substrates, already established based on definitive correlations to Synchrotron X-Ray Topography (SXRT) [1]. The defect locations, classifications and counts determined by our DCNN correlate with the subsequently etch-delineated features and counts. Once our network is sufficiently trained we will no longer need destructive methods to characterize extended defects in 4H-SiC substrates.
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El Hageali, Sami A., Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman et Mowafak Al-Jassim. « Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach ». Journal of Applied Physics 131, no 18 (14 mai 2022) : 185705. http://dx.doi.org/10.1063/5.0088313.

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The development of metal oxide semiconductor field effect transistors (MOSFETs) utilizing epitaxially grown 4H-SiC has accelerated in recent years due to their favorable properties, including a high breakdown field, high saturated electron drift velocity, and good thermal conductivity. However, extended defects in epitaxial 4H-SiC can affect both device yields and operational lifetime. In this work, we demonstrate the importance of a multiscale luminescence characterization approach to studying nondestructively extended defects in epitaxial 4H-SiC semiconducting materials. Multiscale luminescence analysis reveals different aspects of excess charge carrier recombination behavior based on the scale of a particular measurement. Combining measurements of the same extended defect area at different scales tells us more about the essential nature of that defect and its microstructure. Here, we use photoluminescence imaging and cathodoluminescence spectrum imaging to investigate the recombination behavior of several different types of extended defects, including stacking faults, inclusions, and basal plane dislocations. A detailed understanding of the optoelectronic properties of extended defects in epitaxial SiC helps elucidate the microstructure of extended defects and can provide pathways to mitigate detrimental changes during device operation related to their evolution, such as the recombination enhanced dislocation glide effect that affects SiC-based MOSFETs.
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Jäger, Wolfgang. « Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy ». Diffusion Foundations 17 (juillet 2018) : 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.
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Odgaard, P. F., J. Stoustrup et P. Andersen. « Detection of Surface Defects on Compact Discs ». Journal of Control Science and Engineering 2007 (2007) : 1–10. http://dx.doi.org/10.1155/2007/36319.

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Online detection of surface defects on optical discs is of high importance for the accommodation schemes handling these defects. These surface defects introduce defect components to the position measurements of focus and radial tracking positions. The respective controllers will accordingly try to suppress these defect components resulting in a wrong positioning of the optical disc drive. In this paper, two novel schemes for detecting these surface defects are introduced and compared. Both methods, which are an extended threshold scheme and a wavelet packet-based scheme, improve the detection compared with a standard threshold scheme. The extended threshold scheme detects the four tested defects with a maximal detection delay of 3 samples while the wavelet packet-based scheme has a maximal detection delay of 6 samples. Simulations of focus and radial positions in the presence of a surface defect are performed in order to inspect the importance and consequences of the size of the detection delay, from which it can be seen that focus and radial position errors increase significantly due to the defect as the detection delay increases.
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Al-Sabbag, Zaid Abbas, Chul Min Yeum et Sriram Narasimhan. « Interactive defect quantification through extended reality ». Advanced Engineering Informatics 51 (janvier 2022) : 101473. http://dx.doi.org/10.1016/j.aei.2021.101473.

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Thèses sur le sujet "Extended defect"

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Coteau, Michele Denise de. « Impurity gettering at extended defects in silicon ». Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333296.

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Nakamura, Daisuke. « Bulk growth and extended-defect analysis of high-quality SiC single crystals ». 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/136293.

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Lotharukpong, Chalothorn. « Defect characterisation in multi-crystalline silicon ». Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:a803fada-2296-41c3-9d96-864c186957a2.

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Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured. A new APT specimen fabrication process was developed with the ability to select a specific defect for APT analysis. Development of the APT specimen fabrication process proceeded by first selecting and optimising the preferential etching for nano-scale defect delineation. Three etchants were evaluated, namely Secco, Sirtl and Dash, from which the Secco etch was selected. Three parameters were optimised to produce etch pits with geometries that meet the requirements imposed by APT specimen fabrication methods. The optimum parameters were 0.05M potassium dichromate concentration, 20°C etch temperature, and 30sec etch time. In the second stage, marking techniques were developed in order for the defects to be located throughout the APT specimen fabrication process. However, it became apparent that the conventional APT specimen fabrication method could not be used to fabricate APT specimens containing selected defects in a mc-Si sample. This led to the development of a novel APT specimen fabrication approach which allowed APT specimens to be fabricated, reproducibly, containing grain boundaries and isolated dislocations. In order to evaluate accurately iron contamination in mc-Si, four atom probe parameters were optimised to maximise detection sensitivity: the evaporation rate, the laser beam energy, the pulse repetition rate and the specimen temperature. The optimisation process can be divided in to two parts. In the first part, a matrix of pre-sharpened single-crystal silicon specimens was subjected to a variety of experimental parameters. The optimised parameters were determined to be 0.3% evaporation rate, 0.5nJ beam energy, 160kHz repetition rate and 55K specimen temperature. The second part was to determine the iron detection efficiency –the percentage of detected Fe ions that can be correctly identified as Fe– and sensitivity using these parameters to analyse a specially prepared iron calibration specimen. The values were determined to be a detection efficiency of about 35% and sensitivity of 54ppm or 2.70x1018 atom/cm3. The APT specimen fabrication process and the optimised APT analysis parameters were used to analyse four extended defects in mc-Si samples subjected to three different processing conditions, namely gold-contaminated, as-grown and phosphorus diffusion gettering (PDG). The important aspects of the analysis are listed below: • Gold was not detected at the grain boundary and its associated dislocations in the gold-contaminated specimen. The binding enthalpy of gold to such defects is thus less than 0.63eV. • Iron was not detected in any specimen. • Copper was observed at the grain boundary in the as-grown specimen in the form of individual atoms as well as clusters with diameters ranging between 4nm and 9nm. The electrical activity of the grain boundary was about 58%. • Nickel and carbon were detected at the grain boundary in the post-PDG specimen with the former having platelet structures with diameters and thicknesses ranging between 4nm-7nm and 2nm-4nm, respectively. The recombination strength of the defect was about 22%. • Two nickel clusters were found at the isolated dislocation in the post-PDG specimen. The clusters were spherical with an average diameter of 10nm. The distance between the two clusters was 35nm. The recombination strength of the defect was about 4%.
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BARBISAN, LUCA. « Extended defects in heteroepitaxial structures on silicon by Molecular Dynamics simulations : applications to SiGe and cubic SiC ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/366130.

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Il numero di transistor per unità di area che possono essere posizionati su un wafer a semiconduttore dipende dalla capacità del wafer di dissipare tale energia termica. I materiali con elevata conducibilità termica e temperatura di fusione, come il silicio, sono quelli ideali. Le basse correnti di dispersione che si possono ottenere con l'ossido di Si e il nitrato di Si (i suoi composti nativi con l'aria) e l'elevata conducibilità termica hanno consentito una densità di transistor superiore rispetto ad altri semiconduttori. Anche se il silicio domina ancora il ramo principale della tecnologia dei semiconduttori, ci sono aree in cui la bassa mobilità, la bassa velocità di saturazione e il bandgap indiretto hanno permesso lo sviluppo di altri semiconduttori. Essendo il costo della materia prima molto superiore a quello del Si, sono state sviluppate alcune tecniche per ridurre tali costi. Un modo per mantenere il vantaggio termico di un substrato di silicio e ridurre il costo della materia prima dei semiconduttori che non sono Si consiste nell'utilizzare un sottile film di semiconduttore cresciuto sopra un substrato di Si spesso (etero-epitassia). L'eteroepitassia garantisce costi inferiori mantenendo un substrato termicamente efficiente, ma d'altro canto implica che il semiconduttore deve essere cresciuto su un substrato con un parametro reticolare diverso. Le tecnologie epitassiali oggi più diffuse sono l'epi-crescita delle leghe di gruppo III-V e II-VI (soprattutto per l'amplificazione a radiofrequenza e le tecnologie laser) e l'epitassia di semiconduttori di gruppo IV come le leghe SiC e SiGe e il Ge puro. I semiconduttori del gruppo IV hanno il vantaggio non trascurabile di avere costi di fabbricazione inferiori rispetto ai primi. Ovviamente garantiscono prestazioni migliori in termini di proprietà elettroniche rispetto al Si. Il principale ostacolo alla realizzazione di tali dispositivi deriva dal fatto che il disadattamento reticolare induce la formazione di difetti dannosi durante la crescita epitassiale. Tali difetti ostacolano la possibilità di un'applicazione industriale ed estensiva di semiconduttori del gruppo IV diversi dal Si. In genere, i difetti generati sono bordi di grano, dislocazioni, errori di impilamento (stacking fault) e altri difetti estesi. Esiste un forte interesse accademico nella comprensione dei difetti nei sistemi epitassiali. In particolare, due sistemi presentano allo stesso tempo interessanti prospettive applicative e difficili sfide di modellazione teorica: il silicio-germanio e carburo di silicio cubico. Sono infatti semiconduttori attraenti che possono essere facilmente integrati nell'attuale architettura basata su silicio. La loro epitassia su Si è stata studiata per anni, ma le densità dei difetti sono ancora troppo alte in quei sistemi. In questa tesi, affronteremo il problema della modellazione dell'evoluzione di difetti estesi tramite simulazioni di dinamica molecolare. Affronteremo alcuni dei problemi aperti sull'evoluzione dei difetti in entrambi i materiali in esame. I nostri risultati forniranno informazioni sufficienti per far luce sui problemi specifici della formazione e dell'evoluzione di stacking fault multipli in SiC cubico e la formazione di array ordinati di dislocazioni di Lomer in Ge cresciuto su Si.​
Silicon has dominated semiconductor history for almost half a century. Even if the first transistor was made using germanium and other semiconductors show better electronic properties in terms of higher mobility, higher saturation velocity, and larger energy gap. It is the material used to build almost the 97% of all semiconductor-based electronic de- vices. The reason is straightforward; it is the most economical technology to make inte- grated circuits. It has been possible to fabricate integrated circuits with constantly increasing number of transistors on a single chip. The first that analyzed this trend was Gordon Moore in 1965, and he suggested that the trend was due to a constant exercise in cost reduction. The manufacturing cost for a square millimeter of Si remained constant at about 1$ for many decades, while the number of transistors and other elements has grown exponentially with time. The number of transistors for units of area that can be placed on a semiconductor wafer depends on the capacity of the wafer to dissipate such thermal energy. Materials with elevated thermal conducibility and melting temperature, like silicon, are the ideal ones. The low leakage currents that can be achieved with Si oxide and Si nitrate (its native composite with air) and the elevated thermal conducibility allowed a transistor density higher than with other semiconduc- tors. Even if Si still dominates the main branch of semiconductor technology, there are areas where the low mobility, the low saturation velocity, and the indirect bandgap per- mitted other semiconductors to develop. Being the raw material cost much higher than Si one, some techniques have been developed to reduce such costs. A way to maintain the thermal advantage of a silicon substrate and reduce the raw material cost of semi- conductors that are not Si consists of using a thin semiconductor film grown on top of a thick Si substrate (hetero-epitaxy). Hetero-epitaxy guarantees lower costs maintaining a thermally efficient substrate, but on the other side implies that the semiconductor has to be grown on a substrate with a different lattice parameter. Today’s more diffused epitaxial technologies are the epi-grow of group III-V and II-VI alloys (especially for radio frequency amplification and laser technologies) and the epitaxy of group IV semiconductors like the SiC and SiGe alloys and the pure Ge. Group IV semiconductors have the non-negligible advantage of having cheaper fabrication costs than the formers. They, of course, guarantee better performances in terms of electronic properties than Si. The main obstacle in realizing such devices stems from the fact that the lattice mismatch induces the formation of detrimental defects during epitaxial growth. Such defects hinder the possibility of an industrial, extensive appli- cation of group IV semiconductors other than Si. Typically, the generated defects are grain boundaries, misfit dislocations, stacking faults, and other extended defects. A strong academic interest exists in the comprehension of defects in epitaxial systems. In particular, two systems present at the same time exciting application perspectives and hard theoretical modeling challenges: silicon germanium and cubic silicon carbide. They indeed are attractive semiconductors that can be easily integrated into the actual silicon-based architecture. Their epitaxy on Si has been studied for years, but defect densities are still too high in those systems. In this Thesis, we will deal with the problem of modeling extended defects evolution via molecular dynamics simulations. We will tackle some of the open problems about defect evolution in both the materials under consideration. Our results provided enough information to shed light on the specific problems of the formation and evolution of multiple stacking faults in cubic SiC and the formation of ordered arrays of Lomer dislocation in Ge grown on Si.
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Bonjour, Filipe. « Extended defects in curved spacetimes ». Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4966/.

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This Thesis is concerned with three particular aspects of extended cosmic strings and domain walls in cosmology: their dynamics, gravitation and interaction with a black hole. In Chapter 3, we study the dynamics of an abelian-Higgs cosmic string. We find its equations of motion from an effective action and compare, for three test trajectories, the resulting motion with that observed in the Nambu-Gotō approximation. We also present a general argument showing that the corrected motion of any string is generically antirigid. We pursue the investigation of the dynamics of topological defects in Chapter 5, where we find (from integrability conditions rather than an effective action) the effective equations governing the motion of a gravitating curved domain wall. In Chapter 4 we investigate the spacetime of a gravitating domain wall in a theory with a general potential V(ɸ). We show that, depending on the gravitational coupling e of the scalar ɸ, all nontrivial solutions fall into two categories interpretable as describing respectively domain wall and false vacuum-de Sitter solutions. Wall solutions cannot exist beyond a value (^4)(_3)ɛmax, and vacuum-de Sitter solutions are unstable to decaying into wall solutions below ɛmax at ɛmax we observe a phase transition between the two types of solution. We finally specialize for the Goldstone and sine-Gordon potentials. In Chapter 6 we consider a Nielsen-Olesen vortex whose axis passes through the centre of an extremal Reissner-Nordstr0m black hole. We examine in particular the existence of piercing and expelled solutions (where the string respectively does and does not penetrate the black hole's horizon) and determine that while thin strings penetrate the horizon — and therefore can be genuinely called hair — thick strings are expelled; the two kinds of solution are separated by a phase transition.
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Elsner, Joachim. « Surfaces and extended defects in Wurtzite GaN ». [S.l. : s.n.], 1998. http://deposit.ddb.de/cgi-bin/dokserv?idn=961023716.

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Olivier, Ezra Jacobus. « Analysis of the extended defects in 3C-SiC ». Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/730.

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The dissertation focuses on the analysis of the extended defects present in as-grown and proton bombarded β-SiC (annealed and unannealed) grown by chemical vapour deposition (CVD) on (001) Si. The proton irradiation was done to a dose of 2.8 × 1016 protons/cm2 and the annealing took place at 1300°C and 1600°C for 1hr. The main techniques used for the analysis were transmission electron microscopy (TEM) and high resolution TEM (HRTEM). From the diffraction study of the material the phase of the SiC was confirmed to be the cubic beta phase with the zinc-blende structure. The main defects found in the β- SiC were stacking faults (SFs) with their associated partial dislocations and microtwins. The SFs were uniformly distributed throughout the foil. The SFs were identified as having a fault vector of the type 1/3 <111> with bonding partial dislocations of the type 1/6 <121> by using image simulation. The SFs were also found to be predominantly extrinsic in nature by using HRTEM analysis of SFs viewed edge-on. Also both bright and dar-field images of SFs on inclined planes exhibited symmetrical and complementary fringe contrast images. This is a result of the anomalous absorption ratio of SiC lying between that of Si and diamond. The analysis of the annealed and unannealed irradiated β-SiC yielded no evidence of radiation damage or change in the crystal structure of the β-SiC. This confirmed that β-SiC is a radiation resistant material. The critical proton dose for the creation of small dislocation loops seems to be higher than for other compound semiconductors with the zinc-blende structure.
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Eberlein, Thomas Andreas Georg. « Point and extended defects in Group IV semiconductors ». Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398963.

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Fujita, Naomi. « Modelling of point and extended defects in Group IV semiconductors ». Thesis, University of Exeter, 2009. http://hdl.handle.net/10036/90563.

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In this thesis first-principles calculations of point and extended defects in diamond and silicon are reported. In single crystal diamond grown by chemical vapour deposition (CVD) dislocations are observed as mixed-type 45° and edge-type dislocations lying along <100> with 1/2<110> Burgers vectors. Results are presented on the core structures, core energies and electrical properties of both types of dislocations and their interaction with nitrogen is investigated. Then the focus turns to the brown diamond problem. Despite concerted research efforts, the origin of the brown colouration of diamond is still under discussion. Recently, the attention was drawn to vacancy-related defects. Experiments on type IIa diamonds indicate that the brown colour is caused by vacancy-type extended defects, however the shape and size of these defects remained unclear. In this work, the structural, electrical and optical properties of large spherical vacancy clusters and thin vacancy disks are investigated by means of density functional theory and the calculations are compared with recent experimental measurements on brown diamond. High pressure high temperature treatment (HPHT) of brown type Ia diamonds above 2000°C results in the loss of the brown colour and the formation of nitrogen-vacancy defects. The generation of such defects requires a source of mobile vacancies during the annealing process. It is suggested that the vacancy cluster model described in this thesis can explain the observed annealing behaviour since the break-up of the clusters leads to a supersaturation of mobile vacancies which readily complex with substitutional nitrogen atoms present in the material. Therefore, the effect of HPHT treatment of brown type Ia diamond is investigated by studying the formation energies of common and rare defects and estimates of their equilibrium concentrations at different annealing stages are given. Finally, an open problem also involving nitrogen, but in a different group IV semiconductor is considered. In Czochralski-silicon, nitrogen-related shallow thermal donors are formed between 500 and 750°C. Until now the exact chemical composition and atomic structure of these defects are not well established. Here, it is shown that NO and NO_2 belong to the family of nitrogen-oxygen related shallow thermal donors. Based on the law of mass action the equilibrium defect concentrations are predicted. Finally, the theoretical results are compared to recent Fourier transform infrared (FTIR) spectroscopy measurements.
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Cristiano, Filadelfo. « Extended defects in SiGe device structures formed by ion implantation ». Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843871/.

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The use of SiGe/Si heterostructures in the fabrication of electronic devices results in an improvement of the device performances with respect to bulk silicon. Ion implantation has been proposed as one of the possible technologies to produce these structures and, thus, the aim of this work is to develop an ion beam technology to fabricate strained SiGe heterostructures. The formation of extended defects in SiGe alloy layers formed by high dose Ge+ ion implantation followed by Solid Phase Epitaxial Growth (SPEG) has been investigated by transmission electron microscopy. Rutherford backscattering spectroscopy has also been used to determine the chemical composition and the crystalline quality of the synthesised structures. In addition, X-ray diffraction has been used to evaluate the strain level in selected samples. Two different structures have been studied in this project. The first consisted of "all-implanted" layers, where the Ge+ implants were followed in some cases by additional implants of Si+ and/or C+ ions, prior to SPEG, to investigate methods to inhibit defect formation. The second was achieved by capping the ion beam synthesised SiGe alloy layer by the deposition of a thin film of silicon, in order to realise structures compatible with device dimensions. Single crystal device worthy SiGe alloy layers have been achieved by implantation of Ge+ ions at energies ranging from 70 keV to 400 keV, where the only extended defects observed are EOR defects at a depth correspondent to the a/c interface formed during the Ge+ implant. In some cases, "hairpin" dislocations have also been observed in the vicinity of the EOR defects and extending up to the surface. Both types of defects are annihilated after post-amorphisation with 500 keV Si+ and replaced with dislocation loops at a depth of about 1 fj,m. For each Ge+ implantation energy a critical value of the peak germanium concentration exists above which the structures relax through the formation of stacking faults or "hairpin" dislocations nucleated in the vicinity of the peak of the germanium concentration depth profile and extending up to the surface. A critical value of the elastic energy stored in the structures (~300 mJ/m2) has been determined above which ion beam synthesised SiGe alloys relax, independently of the implantation energy. This empirical approach has been found to successfully account for the results obtained in this work as well as in many other studies reported in the literature. "Hairpin" dislocations formed under different experimental conditions have been investigated by plan view TEM and have been found to have the same crystallographic orientation () and Burgers vector (b= a ). Their formation has been explained within a "strain relaxation model". For a regrowth temperature of 700° C, all samples investigated by XRD have been found to be almost fully strained, including samples containing relaxation-induced defects, indicating that, under these conditions, the energy transferred to the defects is very low. C+ co-implantation has been successfully used to reduce both relaxation-induced defects and EOR dislocation loops. It is noted that a mixed technology entailing both layer deposition and ion implantation to produce the Si/SiGe/Si device structures requires extra process steps to control surface contaminations, pre cleaning and/or native oxide formation, resulting in increased fabrication costs. In this work an " all-implanted" route to the synthesis of Si/SiGe/Si device structures is therefore described, which exploits all of the advantages given by ion implantation.
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Livres sur le sujet "Extended defect"

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Claeys, Cor, et Eddy Simoen, dir. Extended Defects in Germanium. Berlin, Heidelberg : Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-85614-6.

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W, Kolb Edward, Liddle Andrew R, United States. National Aeronautics and Space Administration. et Fermi National Accelerator Laboratory, dir. Topological defects in extended inflation. [Batavia, Ill.] : Fermi National Accelerator Laboratory, 1990.

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Benedek, G., A. Cavallini et W. Schröter, dir. Point and Extended Defects in Semiconductors. Boston, MA : Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4.

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Workshop on Point, Extended, and Surface Defects in Semiconductors (2nd 1988 Erice, Italy). Point and extended defects in semiconductors. New York : Plenum Press, 1989.

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(Eddy), Simoen E., dir. Extended defects in Germanium : Fundamental and technological aspects. Berlin : Springer, 2009.

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Scheinemann, Artur. Modelling of leakage currents induced by extended defects in extra-functionality devices. Konstanz : Hartung-Gorre Verlag, 2014.

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Davidson, J. A. Minority carrier processes and recombination at point and extended defects in silicon. Manchester : UMIST, 1996.

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Qian, Y. Characterisation of extended defects induced by oxidation and oxygen implantation in silicon. Manchester : UMIST, 1995.

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Hlaing, Yu Yu. A study on the offences relating to when the right of private defence extends to causing death. Prome, Burma] : University of Pyay, Department of Law, 2015.

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Canada. Dept. of Foreign Affairs and International Trade. Defence : exchange of notes between the Government of Canada and the Government of the United States of America consituting an Agreement to Extend the North American Aerospace Defence Command (NORAD) Agreement for a further five-year period = : Défense : échange de notes entre le gouvernement du Canada et le gouvernement des États-Unis d'Amérique constituant un accord prolongeant l'Accord du commandement de la défense aérospatiale de l'Amérique du Nord (NORAD) pour une période de cinq ans. Ottawa, Ont : Queen's Printer = Imprimeur de la Reine, 1991.

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Chapitres de livres sur le sujet "Extended defect"

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Lebert, Déborah, Jérémy Plouzeau, Jean-Philippe Farrugia, Florence Danglade et Frédéric Merienne. « Synthetic Data Generation for Surface Defect Detection ». Dans Extended Reality, 198–208. Cham : Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-15553-6_15.

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Cormack, A. N. « Defect Interactions, Extended Defects and Non-Stoichiometry in Ceramic Oxides ». Dans Non-Stoichiometric Compounds, 45–52. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0943-4_4.

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Haxell, P. E., et M. Loebl. « On defect sets in bipartite graphs (extended abstract) ». Dans Algorithms and Computation, 334–43. Berlin, Heidelberg : Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/3-540-63890-3_36.

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Delord, X., R. Leveugle et G. Saucier. « Extended Duplex Fault Tolerant System With Integrated Control Flow Checking ». Dans Defect and Fault Tolerance in VLSI Systems, 123–34. Boston, MA : Springer US, 1990. http://dx.doi.org/10.1007/978-1-4757-9957-6_10.

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Khina, Boris B. « Extended 'Five-Stream' Model for Diffusion of Implanted Dopants in Silicon during Ultra-Shallow Junction Formation in VLSI Circuits ». Dans Defect and Diffusion Forum, 107–12. Stafa : Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-55-8.107.

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Gable, K., et K. S. Jones. « Point Defect Kinetics and Extended-Defect Formation during Millisecond Processing of Ion-Implanted Silicon ». Dans Topics in Applied Physics, 213–26. Berlin, Heidelberg : Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88789-8_7.

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Tilley, R. J. D. « Extended Defects ». Dans Inorganic Reactions and Methods, 141–43. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145203.ch100.

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Tilley, R. J. D. « Disordered Extended Defects ». Dans Inorganic Reactions and Methods, 150–51. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145203.ch104.

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Weber, E. R., K. Khachaturyan, M. Hoinkis et M. Kaminska. « Point Defects in GaAs ». Dans Point and Extended Defects in Semiconductors, 39–50. Boston, MA : Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_3.

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Castaing, J. « Extended Defects in Crystalline Materials ». Dans Defects and Disorder in Crystalline and Amorphous Solids, 49–71. Dordrecht : Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1942-9_3.

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Actes de conférences sur le sujet "Extended defect"

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Desplats, Romain, Philippe Perdu, Jamel Benbrik et Michel Dupire. « Faster Defect Localization with a New Development of IDDQ ». Dans ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0259.

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Abstract Recent progress with IDDQ testing has demonstrated the ability to identify a majority of defects in logic ICs. IDDQ testing has also been integrated in fault simulators embedded with automatic test pattern generation (ATPG) algorithms to further extend defect coverage. However, this progress has not eliminated the complex task of defect localization on the silicon level of ICs. To deal with the challenge of faster and more accurate defect localization with greater sensitivity, we have developed a new method based on voltage contrast capabilities for internal localization of IDDQ defects. This method covers an extended range of cases: functional or non functional devices, with or without CAD information, etc... Using only the same test pattern as that used to identify a faulty circuit, the equipotential line of the failure can be located. This approach can also be extended to coupling with netlist information. For example, the equipotential line previously found on the faulty circuit can be compared with the fault simulator output. Then, the site of the simulated defect corresponding to the physical failure can be extracted and local deprocessing with a FIB can be used on the failed circuit to physically reveal the defect with an improved turn around time.
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Mica, I., M. L. Polignano, A. G. Mauri, D. Codegoni, S. Grasso, C. Pozzi, V. Soncini, P. Targa et K. Vad. « Extended defect generation by Xenon implantation in silicon ». Dans INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 : Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865606.

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SKARLATOS, D., D. TSOUKALAS, C. TSAMIS, M. OMRI, L. F. GILES, A. CLAVERIE et J. STOEMENOS. « A COMPARISON BETWEEN POINT DEFECT INJECTING PROCESSES IN SILICON USING EXTENDED DEFECTS AND DOPANT MARKER LAYERS AS POINT DEFECT DETECTORS ». Dans Papers Presented at MMN 2000. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810861_0025.

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Morisaki, Shuji, Akito Monden, Tomoko Matsumura, Haruaki Tamada et Ken-ichi Matsumoto. « Defect Data Analysis Based on Extended Association Rule Mining ». Dans Fourth International Workshop on Mining Software Repositories. IEEE, 2007. http://dx.doi.org/10.1109/msr.2007.5.

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Furukawa, Tomonari, Bonsung Koo, Fei Xu et John G. Michopoulos. « Multi-Sensor Defect Identification Under Sensor Uncertainties ». Dans ASME 2012 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/detc2012-71088.

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This paper presents a methodology for identifying defects by multiple sensors under the presence of both sensor and defect uncertainties. This methodology introduces a representation of the beliefs of both the locations of defects and the sensors each by a probability density function and updates them using the extended Kalman filter. Since the beliefs are recursively maintained while the sensor is moving and the associated observation data are updated, the proposed methodology considers not only the current observation data but also the prior knowledge, the past observation data and beliefs, which include both sensor and defect uncertainties. The concept of differential entropy also has been introduced and is utilized as a performance measure to evaluate the result of defect identification and handle the identification of multiple defects. The verification and evaluation of the proposed methodology performance were conducted via parametric numerical studies. The results have shown the successful identification of defects with reduced uncertainty when the number of measurements increases, even under the presence of large sensor uncertainties. Furthermore, the proposed methodology was applied to the more realistic problem of identifying multiple defects located on a specimen and have demonstrated its applicability to practical defect identification problems.
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Pezeshk, Aria, et Richard L. Tutwiler. « Extended character defect model for recognition of text from maps ». Dans 2010 IEEE Southwest Symposium on Image Analysis & Interpretation (SSIAI). IEEE, 2010. http://dx.doi.org/10.1109/ssiai.2010.5483913.

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Shiraishi, K., M. Saito et T. Ohno. « Charge state dependent point defect in high-k dielectric HfO2 ». Dans Extended Abstracts of International Workshop on Gate Insulator. IEEE, 2003. http://dx.doi.org/10.1109/iwgi.2003.159178.

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Shen, Jian, Shijie Liu, Weijin Kong, Zicai Shen, Jianda Shao et Zhengxiu Fan. « Calculation of extended bidirectional reflectance distribution function for subsurface defect scattering ». Dans 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, sous la direction de Xun Hou, Jiahu Yuan, James C. Wyant, Hexin Wang et Sen Han. SPIE, 2006. http://dx.doi.org/10.1117/12.678595.

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Chlewicki, W., P. Baniukiewicz, T. Chady et A. Brykalski. « Extended radiography system for identification of defect position in three dimensions ». Dans 16th Int'l Symposium on Theoretical Electrical Engineering (ISTET). IEEE, 2011. http://dx.doi.org/10.1109/inds.2011.6024821.

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Golato, Andrew, Sridhar Santhanam, Fauzia Ahmad et Moeness G. Amin. « Extended defect localization in sparsity-based guided wave structural health monitoring ». Dans 2017 IEEE 7th International Workshop on Computational Advances in Multi-Sensor Adaptive Processing (CAMSAP). IEEE, 2017. http://dx.doi.org/10.1109/camsap.2017.8313184.

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Rapports d'organisations sur le sujet "Extended defect"

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Newcomer, P. P., E. L. Venturini, B. L. Doyle, D. K. Brice et H. Schoene. Correlation of intermediate ion energy induced extended defect continuity to enhanced pinning potential in Tl-2212 films. Office of Scientific and Technical Information (OSTI), septembre 1998. http://dx.doi.org/10.2172/672119.

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Copeland, E., E. Kolb et A. Liddle. Topological defects in extended inflation. Office of Scientific and Technical Information (OSTI), avril 1990. http://dx.doi.org/10.2172/6966014.

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Newcomer, P. P., E. L. Venturini, B. L. Doyle, H. Schoene et K. E. Myers. HRTEM of extended defects in Tl-2212 thin films. Office of Scientific and Technical Information (OSTI), février 1997. http://dx.doi.org/10.2172/432995.

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Zhu, Shixin, Heng Gao et Gang Chen. Efficacy and Safety of PRC-063 for Attention-deficit/hyperactivity disorder : A systematic review and meta-analysis from randomized controlled trials. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, décembre 2022. http://dx.doi.org/10.37766/inplasy2022.12.0073.

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Review question / Objective: We conducted a systematic review and meta-analysis from randomized controlled trials to evaluate the efficacy and safety of PRC-063 for Attention-deficit/hyperactivity disorder. Condition being studied: Attention-deficit/hyperactivity disorder (ADHD) is diagnosed with the core symptoms including inattention, hyperactivity and/or impulsivity.Current treatment options for ADHD include pharmacological treatment， behavioral therapy, and combination therapy of the two treatments above. Methylphenidate (MPH) and the extended-release formulation, as a first-line pharmacological treatment of ADHD, have been widely researched in the world.
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Dickman, Martin B., et Oded Yarden. Genetic and chemical intervention in ROS signaling pathways affecting development and pathogenicity of Sclerotinia sclerotiorum. United States Department of Agriculture, juillet 2015. http://dx.doi.org/10.32747/2015.7699866.bard.

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Abstract: The long-term goals of our research are to understand the regulation of sclerotial development and pathogenicity in S. sclerotior11111. The focus in this project was on the elucidation of the signaling events and environmental cues involved in the regulation of these processes, utilizing and continuously developing tools our research groups have established and/or adapted for analysis of S. sclerotiorum, Our stated objectives: To take advantage of the recent conceptual (ROS/PPs signaling) and technical (amenability of S. sclerotiorumto manipulations coupled with chemical genomics and next generation sequencing) developments to address and extend our fundamental and potentially applicable knowledge of the following questions concerning the involvement of REDOX signaling and protein dephosphorylation in the regulation of hyphal/sclerotial development and pathogenicity of S. sclerotiorum: (i) How do defects in genes involved in ROS signaling affect S. sclerotiorumdevelopment and pathogenicity? (ii) In what manner do phosphotyrosinephosphatases affect S. sclerotiorumdevelopment and pathogenicity and how are they linked with ROS and other signaling pathways? And (iii) What is the nature of activity of newly identified compounds that affect S. sclerotiori,111 growth? What are the fungal targets and do they interfere with ROS signaling? We have met a significant portion of the specific goals set in our research project. Much of our work has been published. Briefly. we can summarize that: (a) Silencing of SsNox1(NADPHoxidase) expression indicated a central role for this enzyme in both virulence and pathogenic development, while inactivation of the SsNox2 gene resulted in limited sclerotial development, but the organism remained fully pathogenic. (b) A catalase gene (Scatl), whose expression was highly induced during host infection is involved in hyphal growth, branching, sclerotia formation and infection. (c) Protein tyrosine phosphatase l (ptpl) is required for sclerotial development and is involved in fungal infection. (d) Deletion of a superoxidedismutase gene (Sssodl) significantly reduced in virulence on both tomato and tobacco plants yet pathogenicity was mostly restored following supplementation with oxalate. (e) We have participated in comparative genome sequence analysis of S. sclerotiorumand B. cinerea. (f) S. sclerotiorumexhibits a potential switch between biotrophic and necrotrophic lifestyles (g) During plant­ microbe interactions cell death can occur in both resistant and susceptible events. Non­ pathogenic fungal mutants S. sclerotior111n also cause a cell death but with opposing results. We investigated PCD in more detail and showed that, although PCD occurs in both circumstances they exhibit distinctly different features. The mutants trigger a restricted cell death phenotype in the host that unexpectedly exhibits markers associated with the plant hypersensitive (resistant) response. Using electron and fluorescence microscopy, chemical effectors and reverse genetics, we have established that this restricted cell death is autophagic. Inhibition of autophagy rescued the non-pathogenic mutant phenotype. These findings indicate that autophagy is a defense response in this interaction Thus the control of cell death, dictated by the plant (autophagy) סr the fungus (apoptosis), is decisive to the outcome of certain plant­ microbe interactions. In addition to the time and efforts invested towards reaching the specific goals mentioned, both Pls have initiated utilizing (as stated as an objective in our proposal) state of the art RNA-seq tools in order to harness this technology for the study of S. sclerotiorum. The Pls have met twice (in Israel and in the US), in order to discuss .נחd coordinate the research efforts. This included a working visit at the US Pls laboratory for performing RNA-seq experiments and data analysis as well as working on a joint publication (now published). The work we have performed expands our understanding of the fundamental biology (developmental and pathogenic) of S. sclerotioז111וז. Furthermore, based on our results we have now reached the conclusion that this fungus is not a bona fide necrotroph, but can also display a biotrophic lifestyle at the early phases of infection. The data obtained can eventually serve .נ basis of rational intervention with the disease cycle of this pathogen.
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Kirby, Stefan M., J. Lucy Jordan, Janae Wallace, Nathan Payne et Christian Hardwick. Hydrogeology and Water Budget for Goshen Valley, Utah County, Utah. Utah Geological Survey, novembre 2022. http://dx.doi.org/10.34191/ss-171.

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Goshen Valley contains extensive areas of agriculture, significant wetlands, and several small municipalities, all of which rely on both groundwater and surface water. The objective of this study is to characterize the hydrogeology and groundwater conditions in Goshen Valley and calculate a water budget for the groundwater system. Based on the geologic and hydrologic data presented in this paper, we delineate three conceptual groundwater zones. Zones are delineated based on areas of shared hydrogeologic, geochemical, and potentiometric characteristics within the larger Goshen Valley. Groundwater in Goshen Valley resides primarily in the upper basin fill aquifer unit (UBFAU) and lower carbonate aquifer unit (LCAU) hydrostratigraphic units. Most wells in Goshen Valley are completed in the UBFAU, which covers much of the valley floor. The UBFAU is the upper part of the basin fill, which is generally less than 1500 feet thick in Goshen Valley. Important spring discharge at Goshen Warm Springs issues from the LCAU. Relatively impermeable volcanic rocks (VU) occur along much of the upland parts of the southern part of Goshen Valley. Large sections of the southwest part of the Goshen Valley basin boundary have limited potential for interbasin flow. Interbasin groundwater flow is likely at several locations including the Mosida Hills and northern parts of Long Ridge and Goshen Gap in areas underlain by LCAU. Depth to groundwater in Goshen Valley ranges from at or just below the land surface to greater than 400 feet. Groundwater is within 30 feet of the land surface near and north of Goshen, in areas of irrigated pastures and wetlands that extend east toward Long Ridge and Goshen Warm Springs, and to the north towards Genola. Groundwater movement is from upland parts of the study area toward the valley floor and Utah Lake. Long-term water-level change is evident across much of Goshen Valley, with the most significant decline present in conceptual zone 2 and the southern part of conceptual zone 1. The area of maximum groundwater-level decline—over 50 feet—is centered a few miles south of Elberta in conceptual zone 2. Groundwater in Goshen Valley spans a range of chemistries that include locally high total dissolved solids and elevated nitrate and arsenic concentrations and varies from calcium-bicarbonate to sodium-chloride-type waters. Overlap in chemistry exists in surface water samples from Currant Creek, the Highline Canal, and groundwater. Stable isotopes indicate that groundwater recharges from various locations that may include local recharge, from the East Tintic Mountains, or far-traveled groundwater recharged either in Cedar Valley or east of the study area along the Wasatch Range. Dissolved gas recharge temperatures support localized recharge outside of Goshen. Most groundwater samples in Goshen Valley are old, with limited evidence of recent groundwater recharge. An annual water budget based on components of recharge and discharge yields total recharge of 32,805 acre-ft/yr and total discharge of 35,750 acre-ft/yr. Most recharge is likely from interbasin flow and lesser amounts from precipitation and infiltration of surface water. Most discharge is from well water withdrawal with minor spring discharge and groundwater evapotranspiration. Water-budget components show discharge is greater than recharge by less than 3000 acreft/yr. This deficit or change in storage is manifested as longterm water-level decline in conceptual zone 2, and to a lesser degree, in conceptual zone 1. The primary driver of discharge in conceptual zone 2 is well withdrawal. Conceptual zone 3 is broadly in balance across the various sources of recharge and discharge, and up to 1830 acre-ft/yr of water may discharge from conceptual zone 3 into Utah Lake. Minimal groundwater likely flows to Utah Lake from zones 1 or 2.
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