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Auteur : Grafiati
Publié le 11 septembre 2023

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1

Salman, RK. « Research note : Light emitting diodes as solar power resources ». Lighting Research & ; Technology 51, no 3 (19 mars 2018) : 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and parallel) and the angle of incidence of the sun’s rays to the light emitting diode’s base. The results showed promising voltage data for parallel-connected light emitting diodes of lemon (yellow-green) and green colour. The variations in voltage produced by tilting the light emitting diode’s base exhibited similar behaviour to that seen in solar panels. The power that was harvested from the light emitting diodes was extremely low, but the voltage gains showed promising trends that could be employed in useful applications. Hence, light emitting diodes could be re-used to reduce environmental pollution and thus to contribute towards environmental enhancement.
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2

Bumai, Yurii, Aleh Vaskou et Valerii Kononenko. « Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes ». Metrology and Measurement Systems 17, no 1 (1 janvier 2010) : 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.
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3

Feng, XF, W. Xu, QY Han et SD Zhang. « Colour-enhanced light emitting diode light with high gamut area for retail lighting ». Lighting Research & ; Technology 49, no 3 (19 octobre 2015) : 329–42. http://dx.doi.org/10.1177/1477153515610621.

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Light emitting diodes with high colour quality were investigated to enhance colour appearance and improve observers' preference for the illuminated objects. The spectral power distributions of the light emitting diodes were optimised by changing the ratios of the narrow band red, green and blue light emitting diodes, and the phosphor-converted broad-band light emitting diode to get the desired colour rendering index and high gamut area index. The influence of the light emitting diode light on different coloured fabrics was investigated. The experimental results and the statistical analysis show that by optimising the red, green, blue components the light emitting diode light can affect the colour appearance of the illuminated fabrics positively and make the fabrics appear more vivid and saturated due to the high gamut area index. Observers indicate a high preference for the colours whose saturations are enhanced. The results reveal that the colour-enhanced light emitting diode light source can better highlight products and improve visual impression over the ceramic metal halide lamp and the phosphor-converted light emitting diode light source.
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4

Muray, Kathleen. « Photometry of diode emitters : light emitting diodes and infrared emitting diodes ». Applied Optics 30, no 16 (1 juin 1991) : 2178. http://dx.doi.org/10.1364/ao.30.002178.

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5

Hayes, Clinton J., Kerry B. Walsh et Colin V. Greensill. « Light-emitting diodes as light sources for spectroscopy : Sensitivity to temperature ». Journal of Near Infrared Spectroscopy 25, no 6 (10 octobre 2017) : 416–22. http://dx.doi.org/10.1177/0967033517736164.

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Understanding of light-emitting diode lamp behaviour is essential to support the use of these devices as illumination sources in near infrared spectroscopy. Spectral variation in light-emitting diode peak output (680, 700, 720, 735, 760, 780, 850, 880 and 940 nm) was assessed over time from power up and with variation in environmental temperature. Initial light-emitting diode power up to full intensity occurred within a measurement cycle (12 ms), then intensity decreased exponentially over approximately 6 min, a result ascribed to an increase in junction temperature as current is passed through the light-emitting diode. Some light-emitting diodes displayed start-up output characteristics on their first use, indicating the need for a short light-emitting diode ‘burn in’ period, which was less than 24 h in all cases. Increasing the ambient temperature produced a logarithmic decrease in overall intensity of the light-emitting diodes and a linear shift to longer wavelength of the peak emission. This behaviour is consistent with the observed decrease in the IAD Index (absorbance difference between 670 nm and 720 nm, A670–A720) with increased ambient temperature, as measured by an instrument utilising light-emitting diode illumination (DA Meter). Instruments using light-emitting diodes should be designed to avoid or accommodate the effect of temperature. If accommodating temperature, as light-emitting diode manufacturer specifications are broad, characterisation is recommended.
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6

Malevskaya A. V., Kalyuzhnyy N. A., Mintairov S. A., Salii R. A., Malevskii D. A., Nakhimovich M. V., Larionov V. R., Pokrovskii P. V., Shvarts M. Z. et Andreev V. M. « High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors ». Semiconductors 55, no 14 (2022) : 2166. http://dx.doi.org/10.21883/sc.2022.14.53866.9711.

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Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE=37.5% at current densities greater than >10 A/cm2 have been fabricated. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, InGaAs quantum wells.
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7

Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, Sh A. Begimkulov, F. M. Kamoliddinov, A. G. Qahhorov et A. G. Aliboyev. « Simulation of physical processes in light-emitting diode pumped lasers ». «Узбекский физический журнал» 23, no 3 (7 décembre 2021) : 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.
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8

Jaafar, NI, A. Sulaiman, S. Moghavvemi, FP Tajudeen et F. Dehdar. « Factors affecting the intention to adopt light-emitting diode lighting at home ». Lighting Research & ; Technology 52, no 8 (2 avril 2020) : 1020–39. http://dx.doi.org/10.1177/1477153520915964.

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This study investigates the significant factors affecting the adoption of light emitting diode lighting among households in Malaysia by conceptualizing and extending the unified theory of acceptance and use of technology through the adaptation of price value and the anticipated emotions of pride and guilt within the model. This study used the partial least squares technique to validate measurements and to test the research hypotheses. The results obtained from analysing 1075 valid survey questionnaires revealed the effects of performance expectancy, effort expectancy and price value on the intention to use light-emitting diodes among Malaysian households. While the results support the mediating role of attitude between the three variables and intention to use light-emitting diodes, the moderating role of anticipated pride on the relationship between attitude and intention to use light-emitting diodes was not supported. The findings confirm that guilt significantly moderates the relationship between attitude and intention.
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9

Malevskaya A. V., Il’inskaya N. D., Kalyuzhnyy N. A., Malevskiy D. A., Zadiranov Y. M., Pokrovskiy P. V., Blokhin A. A. et Andreeva A. V. « Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures ». Semiconductors 56, no 13 (2022) : 2081. http://dx.doi.org/10.21883/sc.2022.13.53906.9679.

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Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2-1.5 μm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved. Keywords: light-emitting diode, texturing, etching methods, electroluminescence.
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10

Lewis, R. B., D. A. Beaton, Xianfeng Lu et T. Tiedje. « light emitting diodes ». Journal of Crystal Growth 311, no 7 (mars 2009) : 1872–75. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.093.

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11

Janicki, Marcin, Tomasz Torzewicz, Przemysław Ptak, Tomasz Raszkowski, Agnieszka Samson et Krzysztof Górecki. « Parametric Compact Thermal Models of Power LEDs ». Energies 12, no 9 (7 mai 2019) : 1724. http://dx.doi.org/10.3390/en12091724.

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Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and various preset cold plate temperatures. These data allowed the computation of optical and real heating power values and consequently the generation of compact thermal models in the form of Foster and Cauer RC ladders. This also rendered possible the analysis of the influence of the considered factors on the compact model element values and their parametrization. The resulting models yield accurate values of diode junction temperature in most realistic operating conditions and they can be easily included in multidomain compact models of power light emitting diodes.
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12

Kim, Taekyung, Kyung Hyung Lee et Jun Yeob Lee. « Superb lifetime of blue organic light-emitting diodes through engineering interface carrier blocking layers and adjusting electron leakage and an unusual efficiency variation at low electric field ». Journal of Materials Chemistry C 6, no 31 (2018) : 8472–78. http://dx.doi.org/10.1039/c8tc02286k.

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An extremely long lifetime blue organic light-emitting diode (OLED) was developed through managing the electron density and an S-shaped variation of efficiency in blue fluorescent organic light-emitting diodes (FOLEDs) using carrier blocking layers and systematically analyzed in conjunction with the efficiency–lifetime interrelationship.
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13

Choi, Geun Su, Byunghyun Kang, Jinnil Choi, Byeong-Kwon Ju et Young Wook Park. « Reduced Efficiency Roll-Off in Phosphorescent Organic Light-Emitting Diodes with a Double Dopant ». Journal of Nanoscience and Nanotechnology 20, no 11 (1 novembre 2020) : 6679–82. http://dx.doi.org/10.1166/jnn.2020.18770.

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The phenomenon by which the efficiency decreases rapidly with the increase in luminance or current density in organic light-emitting diodes is termed efficiency roll-off. In particular, phosphorescent organic light-emitting diodes are known to have higher efficiency, but tend to exhibit higher efficiency roll-off compared with fluorescent organic light-emitting diodes. In this study, we report the efficiency roll-off characteristics of double-dopant phosphorescent organic light-emitting diodes. The double-dopant phosphorescent organic light-emitting diodes showed significantly lower efficiency roll-off compared with single-dopant phosphorescent organic light-emitting diodes. (The double-dopant device showed a 2.5-fold decrease in efficiency roll-off compared with the single-dopant device at 50 mA/cm2, and a 1.6-fold decrease in efficiency roll-off at 100 mA/cm2).
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14

Hofmann, Simone, Michael Thomschke, Björn Lüssem et Karl Leo. « Top-emitting organic light-emitting diodes ». Optics Express 19, S6 (7 novembre 2011) : A1250. http://dx.doi.org/10.1364/oe.19.0a1250.

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15

Baigent, D. R., R. N. Marks, N. C. Greenham, R. H. Friend, S. C. Moratti et A. B. Holmes. « Surface-emitting polymer light-emitting diodes ». Synthetic Metals 71, no 1-3 (avril 1995) : 2177–78. http://dx.doi.org/10.1016/0379-6779(94)03209-o.

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16

Горелик, В. С., А. Ю. Пятышев et Н. В. Сидоров. « Фотолюминесценция ниобата лития, легированного медью ». Физика твердого тела 60, no 5 (2018) : 904. http://dx.doi.org/10.21883/ftt.2018.05.45784.339.

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AbstractThe photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.
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17

Dorokhin, M. V., Y. A. Danilov, Alexei V. Kudrin, E. I. Malysheva, M. M. Prokof’eva et B. N. Zvonkov. « Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer ». Solid State Phenomena 190 (juin 2012) : 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.89.

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The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.
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18

Hontaruk, O. M. « Low doses effect in GaP light-emitting diodes ». Semiconductor Physics Quantum Electronics and Optoelectronics 19, no 2 (6 juillet 2016) : 183–87. http://dx.doi.org/10.15407/spqeo19.02.183.

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19

Masui, Hisashi. « Diode ideality factor in modern light-emitting diodes ». Semiconductor Science and Technology 26, no 7 (11 avril 2011) : 075011. http://dx.doi.org/10.1088/0268-1242/26/7/075011.

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20

Bansal, Kanika, et Shouvik Datta. « Dielectric Response of Light Emitting Semiconductor Junction Diodes : Frequency and Temperature Domain Study ». MRS Proceedings 1635 (2014) : 49–54. http://dx.doi.org/10.1557/opl.2014.206.

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ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.
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Sobolev N. A., Kalyadin A. E., Shtel’makh K. F., Aruev P. N., Zabrodskiy V. V. et Shek E. I. « Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates ». Semiconductors 56, no 9 (2022) : 685. http://dx.doi.org/10.21883/sc.2022.09.54135.9917.

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Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3·10-20 cm2·s at room temperature. Keywords:: Light-emitting diodes, dislocation-related luminescence, silicon, oxygen precipitates.
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22

A. V. Malevskaya, N. A. Kalyuzhnyy, F. Y. Soldatenkov, R.V. Levin, R.A. Salii, D. A. Malevskii, P.V. Pokrovskii, V.R. Larionov et V. M. Andreev. « Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate ». Technical Physics 68, no 1 (2023) : 161. http://dx.doi.org/10.21883/tp.2023.01.55451.166-22.

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Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2-5)·10-6 Ω·cm2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm2 square) series resistance was 0.16 Ω. Optical power 270 mW at current 1.5 A has been achieved. Keywords: AlGaAs/GaAs- heterostructure, light-emitting diode, transfer to carrier-substrate, Au--In- compound, ohmic contacts.
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23

Li, Ning, Ying Suet Lau, Yanqin Miao et Furong Zhu. « Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes ». Nanophotonics 7, no 12 (26 novembre 2018) : 1981–88. http://dx.doi.org/10.1515/nanoph-2018-0149.

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AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.
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24

RAZEGHI, MANIJEH. « GaN-BASED LASER DIODES ». International Journal of High Speed Electronics and Systems 09, no 04 (décembre 1998) : 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.
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25

Krump, R., S. O. Ferreira, W. Faschinger, G. Brunthaler et H. Sitter. « ZnMgSeTe Light Emitting Diodes ». Materials Science Forum 182-184 (février 1995) : 349–52. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.349.

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26

Behrman, Keith, et Ioannis Kymissis. « Micro light-emitting diodes ». Nature Electronics 5, no 9 (22 septembre 2022) : 564–73. http://dx.doi.org/10.1038/s41928-022-00828-5.

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Zhao, Chenyang, Dezhong Zhang et Chuanjiang Qin. « Perovskite Light-Emitting Diodes ». CCS Chemistry 2, no 4 (août 2020) : 859–69. http://dx.doi.org/10.31635/ccschem.020.202000216.

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28

Faschinger, W., R. Krump, G. Brunthaler, S. Ferreira et H. Sitter. « ZnMgSeTe light emitting diodes ». Applied Physics Letters 65, no 25 (19 décembre 1994) : 3215–17. http://dx.doi.org/10.1063/1.112416.

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29

Heiskanen, Vladimir, et Michael R. Hamblin. « Photobiomodulation : lasersvs.light emitting diodes ? » Photochemical & ; Photobiological Sciences 17, no 8 (2018) : 1003–17. http://dx.doi.org/10.1039/c8pp00176f.

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Photobiomodulation (PBM) is a treatment method based on research findings showing that irradiation with certain wavelengths of red or near-infrared light has been shown to produce a range of physiological effects in cells, tissues, animals and humans.
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30

Dodabalapur, Ananth. « Organic light emitting diodes ». Solid State Communications 102, no 2-3 (avril 1997) : 259–67. http://dx.doi.org/10.1016/s0038-1098(96)00714-4.

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31

Mou, Sinthia Shabnam, Hiroshi Irie, Yasuhiro Asano, Kouichi Akahane, Hiroyuki Kurosawa, Hideaki Nakajima, Hidekazu Kumano, Masahide Sasaki et Ikuo Suemune. « Superconducting Light-Emitting Diodes ». IEEE Journal of Selected Topics in Quantum Electronics 21, no 2 (mars 2015) : 1–11. http://dx.doi.org/10.1109/jstqe.2014.2346617.

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32

Ren, J., K. A. Bowers, B. Sneed, D. L. Dreifus, J. W. Cook, J. F. Schetzina et R. M. Kolbas. « ZnSe light‐emitting diodes ». Applied Physics Letters 57, no 18 (29 octobre 1990) : 1901–3. http://dx.doi.org/10.1063/1.104006.

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33

Mills, Alan. « Light Emitting Diodes 2004 ». III-Vs Review 17, no 9 (décembre 2004) : 22–24. http://dx.doi.org/10.1016/s0961-1290(04)00844-0.

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34

Kioseoglou, George, et Athos Petrou. « Spin Light Emitting Diodes ». Journal of Low Temperature Physics 169, no 5-6 (28 juin 2012) : 324–37. http://dx.doi.org/10.1007/s10909-012-0648-x.

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Tamulaitis, Gintautas. « Ultraviolet light emitting diodes ». Lithuanian Journal of Physics 51, no 3 (2011) : 177–93. http://dx.doi.org/10.3952/lithjphys.51307.

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Sreedhar, K. V. S. « Light Emitting Diodes (LEDs) ». IOSR Journal of Electronics and Communication Engineering 9, no 2 (2014) : 07–13. http://dx.doi.org/10.9790/2834-09270713.

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Se-yuen, Mak. « Using infrared emitting diodes ». Physics Education 38, no 2 (1 mars 2003) : 103–7. http://dx.doi.org/10.1088/0031-9120/38/2/406.

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Adivarahan, V., W. H. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska et M. Asif Khan. « 250nmAlGaN light-emitting diodes ». Applied Physics Letters 85, no 12 (20 septembre 2004) : 2175–77. http://dx.doi.org/10.1063/1.1796525.

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Mukai, T., S. Nagahama, N. Iwasa, M. Senoh et T. Yamada. « Nitride light-emitting diodes ». Journal of Physics : Condensed Matter 13, no 32 (26 juillet 2001) : 7089–98. http://dx.doi.org/10.1088/0953-8984/13/32/314.

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Suzuki, Hiroyuki, Satoshi Hoshino, Kazuaki Furukawa, Keisuke Ebata, Chien-Hua Yuan et Ingo Bleyl. « Polysilane light-emitting diodes ». Polymers for Advanced Technologies 11, no 8-12 (2000) : 460–67. http://dx.doi.org/10.1002/1099-1581(200008/12)11:8/12<460 ::aid-pat992>3.0.co;2-3.

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Greczmiel, Michael, Peter Pösch, Hans-Werner Schmidt, Peter Strohriegl, Elke Buchwald, Martin Meier, Walter Rieß et Markus Schwoerer. « Polymer light emitting diodes ». Macromolecular Symposia 102, no 1 (janvier 1996) : 371–80. http://dx.doi.org/10.1002/masy.19961020144.

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Романов, В. В., И. А. Белых, Э. В. Иванов, П. А. Алексеев, Н. Д. Ильинская et Ю. П. Яковлев. « Светодиоды на основе асимметричной двойной гетероструктуры InAs/InAsSb/InAsSbP для детектирования CO-=SUB=-2-=/SUB=- (λ=4.3 мкм) и CO (λ=4.7 мкм) ». Физика и техника полупроводников 53, no 6 (2019) : 832. http://dx.doi.org/10.21883/ftp.2019.06.47738.9051.

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Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor-phase epitaxy. Two types of light–emitting diodes (A and B) were created on basis of grown heterostructures with emission peak at 4.1 µm and 4.7 µm, respectively. The current–voltage and electroluminescent characteristics of light–emitting diodes are investigated at room temperature. When operating at 50 % duty cycle mode (frequency − 512 Hz) with a current of 250 mA, light–emitting diodes A and B produced the optical power of 24 μW and 15 μW, respectively. Under the pulse operation (frequency − 512 Hz, duration − 1 μs) with a current of 2.1 A, the optical power of light–emitting diodes А and B reached the values of 158 μW and 76 μW, respectively. The developed light–emitting diodes can be used as high-effective radiation sources in optical absorption sensors for detection of carbon dioxide and carbon monoxide in the atmosphere.
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Kuttipillai, Padmanaban S., Yimu Zhao, Christopher J. Traverse, Richard J. Staples, Benjamin G. Levine et Richard R. Lunt. « Light-Emitting Diodes : Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016) ». Advanced Materials 28, no 2 (janvier 2016) : 319. http://dx.doi.org/10.1002/adma.201670012.

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Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V. et Danilov Yu. A. « Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor ». Technical Physics Letters 48, no 13 (2022) : 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.
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Hande, Savithri, et Prajna K B. « Survey on Organic Light Emitting Diode ». International Journal of Innovative Science and Research Technology 5, no 6 (2 juillet 2020) : 630–36. http://dx.doi.org/10.38124/ijisrt20jun492.

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Organic light emitting diodes is a new display technology, which uses organic thin materials that are placed between conductors. When an electric current is applied, a bright light is emitted. OLEDs are thin, transparent, flexible, foldable displays. In 1987 researchers of Eastman Kodak company invented OLED diode technology. The principal inventors were Chemists Ching W. Tang and Steven Van Slyke. In 2001 they received an Industrial Innovation Award from the American Chemical Society for their contribution in organic light emitting diodes. In 2003, Kodak realised its first OLED display had 512 by 218 pixels, 2.2 inch. Two technologies necessary to make flexible OLEDs were invented by Researchers at Pacific Northwest National Laboratory and the Department of Energy. Many researchers are contributing to improve the OLED technology. In this paper we give a brief of what is OLED, types of OLED, different fabrication methods of OLED, advantages and disadvantages of OLED.
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Малевская, А. В., Н. Д. Ильинская, Н. А. Калюжный, Д. А. Малевский, Ю. М. Задиранов, П. В. Покровский, А. А. Блохин et А. В. Андреева. « Исследование методов текстурирования светодиодов на основе гетероструктур AlGaAs/GaAs ». Физика и техника полупроводников 55, no 11 (2021) : 1086. http://dx.doi.org/10.21883/ftp.2021.11.51565.9679.

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Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2–1.5 µm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved.
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Bu, Ian Yi-yu. « Organometal halide perovskite-based optoelectronic devices ». WEENTECH Proceedings in Energy 4, no 2 (10 janvier 2019) : 221–26. http://dx.doi.org/10.32438/wpe.7018.

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Abstract Organometal halide perovskites are potential optoelectronic materials due to high solar cell efficiencies of 22.1% and light-emitting diodes with wide color gamut emission and external quantum efficiencies of 8%. Although perovskite light-emitting devices are still in research and development phase, in only a few years perovskite-based light emitting diodes have already exceeded the performance of organic light-emitting diodes. Further progress in this new material will depend on material optimization and development of scalable deposition process. Here, the advancements in perovskite-based optoelectronic devices at National university of Tainan are presented.
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Jang, Ho Seong, et Duk Young Jeon. « Yellow-emitting Sr3SiO5:Ce3+,Li+ phosphor for white-light-emitting diodes and yellow-light-emitting diodes ». Applied Physics Letters 90, no 4 (22 janvier 2007) : 041906. http://dx.doi.org/10.1063/1.2432947.

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Wang, Ming-Sheng, et Guo-Cong Guo. « Inorganic–organic hybrid white light phosphors ». Chemical Communications 52, no 90 (2016) : 13194–204. http://dx.doi.org/10.1039/c6cc03184f.

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Islam, Amirul, Md Tanvir Hossan et Yeong Min Jang. « Convolutional neural networkscheme–based optical camera communication system for intelligent Internet of vehicles ». International Journal of Distributed Sensor Networks 14, no 4 (avril 2018) : 155014771877015. http://dx.doi.org/10.1177/1550147718770153.

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The evolution of the Internet of vehicles and growing use of mobile devices has created a demand for new wireless communication technologies. Optical camera communication, which uses light-emitting diodes as transmitters and cameras as receivers, has emerged as a promising alternative. Since light-emitting diodes and cameras are already exploring in traffic lights, vehicles, and public lightings, optical camera communication has the potential to intelligently handle transport systems. Although other technologies have been proposed or developed in both academia and industry, they are not yet mature enough to uphold the huge requirements of the Internet of vehicles. This study introduces a new intelligent Internet of vehicles system based on optical camera communication combined with convolutional neural networks. Optical camera communication is a promising candidate for maintaining interference-free and more robust communication, for supporting the Internet of vehicles. Convolutional neural network is introduced for precise detection and recognition of light-emitting diode patterns at long distances and in bad weather conditions. We propose an algorithm to detect the interested light-emitting diode signals (i.e. regions-of-interest), measure the distance using a stereo-vision technique to find out the desired targets, and simulate our proposed scheme using a MATLAB Toolbox. Thus, our system will provide great advantages for next-generation transportation systems.
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