Thèses : « Electronic Spin - Semiconductor Structures »

1

Liu, William K. « Electron spin dynamics in quantum dots, and the roles of charge transfer excited states in diluted magnetic semiconductors / ». Thesis, Connect to this title online ; UW restricted, 2007. http://hdl.handle.net/1773/8588.

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Segarra, Ortí Carlos. « Electronic structure of quantum dots : response to the environment and externally applied fields ». Doctoral thesis, Universitat Jaume I, 2016. http://hdl.handle.net/10803/396165.

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En esta Tesis Doctoral se han estudiado teóricamente las propiedades electrónicas y ópticas de electrones y huecos confinados en puntos cuánticos semiconductores mediante el uso del método k·p dentro de las aproximaciones de masa efectiva y de función envolvente. Para tal fin, se han desarrollado modelos computacionales capaces de describir adecuadamente la estructura electrónica de las bandas de conducción y valencia de sistemas sometidos a varios fenómenos de interés. En concreto, se ha prestado especial atención a la respuesta de estas nanoestructuras frente a interacciones con el entorno (tensiones de deformación y piezoelectricidad) y a la aplicación de campos eléctricos y magnéticos externos. Adicionalmente, se ha estudiado la relajación de espín inducida por el acoplamiento espín-órbita teniendo en cuenta todas las posibles fuentes de mezcla de espín mediante modelos tridimensionales. Por último, se ha explorado también la aparición de estados de borde en nanoestructuras formadas por MoS2 monocapa.
In this PhD Thesis we theoretically investigate the optical and electronic properties of semiconductor nanostructures by using the k·p method within the effective mass and the envelope function approximations. To this end, computational models are built to properly describe the conduction and valence bands of nanoscopic systems subject to various relevant phenomena. Particularly, we focus on quantum dots of different shape, dimensions, and composition to explore their behavior under external magnetic fields and interactions with the environment such as strain and piezoelectricity. In addition, the spin-orbit-induced relaxation of the spin degree of freedom confined in quantum dots is also studied taking into account all relevant sources of spin mixing in fully three-dimensional models. Finally, we also study the emergence of edge states in nanoribbons and quantum dots of monolayer MoS2, which is a novel two-dimensional material. The obtained results reveal several interesting features which may be useful for future applications.

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Liu, Guoduan. « Fabrication and Characterization of Planar-Structure Perovskite Solar Cells ». UKnowledge, 2019. https://uknowledge.uky.edu/ece_etds/137.

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Currently organic-inorganic hybrid perovskite solar cells (PSCs) is one kind of promising photovoltaic technology due to low production cost, easy fabrication method and high power conversion efficiency. Charge transport layers are found to be critical for device performance and stability. A traditional electron transport layer (ETL), such as TiO2 (Titanium dioxide), is not very efficient for charge extraction at the interface. Compared with TiO2, SnO2 (Tin (IV) Oxide) possesses several advantages such as higher mobility and better energy level alignment. In addition, PSCs with planar structure can be processed at lower temperature compared to PSCs with other structures. In this thesis, planar-structure perovskite solar cells with SnO2 as the electron transport layer are fabricated. The one-step spin-coating method is employed for the fabrication. Several issues are studied such as annealing the samples in ambient air or glovebox, different concentration of solution used for the samples, the impact of using filter for solutions on samples. Finally, a reproducible fabrication procedure for planer-structure perovskite solar cells with an average power conversion efficiency of 16.8%, and a maximum power conversion efficiency of 18.1% is provided.

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Oliveira, Miguel Afonso Magano Hipolito De Jesus. « Electronic properties of layered semiconductor structures ». Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.406392.

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Moehlmann, Benjamin James. « Spin transport in strained non-magnetic zinc blende semiconductors ». Diss., University of Iowa, 2012. https://ir.uiowa.edu/etd/3353.

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The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We begin with a review of the literature on spin dynamics in semiconductors, then discuss the semi-empirical k ⋅ p method of calculating direct-gap semiconductor properties, which we use to estimate material parameters significant for manipulation of spin even in the absence of a magnetic field. The total effective magnetic fields and precession lengths are calculated for a variety of quantum well orientations, and a class of devices are proposed that will allow for all-electric arbitrary manipulation of spin orientations. The strain- and momentum-dependent spin splitting coefficient C3 has been calculated using a fourteen band Kane k⋅p model for a variety of III-V semiconductors as well as ZnSe and CdSe. It is observed that the spin-splitting parameters C3 and γ, corresponding to the strain-induced spin-orbit interaction and Dresselhaus coefficient, are sensitive to the value of the inter-band spin-orbit coupling Δ− between the p valence and p̄ second conduction band in all cases. The value of Δ− has therefore been recalculated in these materials using a tight-binding model and modern experimental values of the valence and second conduction band spin-orbit splittings. The total effective magnetic field and precession length of spins in strained quantum wells in the (001), (110), and (111) planes are derived with consideration for all known effective magnetic fields except those due to interface effects in non- common-atom heterostructures (native inversion asymmetry). The orientation of the k-linear Dresselhaus field and the strain-dependent fields vary strongly with the growth axis of the quantum well. The precession length in the (110) and (001) cases can achieve infinite anisotropy, while the precession length of (111) quantum wells is always isotropic. We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zinc blende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (< 100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

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Nguyen, Cong Tu. « Spin dynamics in GaN- and InGaAs-based semiconductor structures ». Thesis, Toulouse, INSA, 2014. http://www.theses.fr/2014ISAT0006/document.

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Ce travail de thèse est une contribution à l'étude de la dynamique de spin des porteurs dans des structures semiconductrices III-V en vue d’applications possibles dans le domaine émergent de la spintronique dans les semiconducteurs. Deux approches différentes on été envisagées afin de pouvoir obtenir une polarisation en spin des porteurs longue et robuste : i) le confinement spatial dans des nano-structures 0D (boîtes quantiques), ii) l’ingénierie des centres paramagnétiques dans des couches massives.Pour la première approche, nous avons étudié les propriétés de polarisation de spin d’excitons confinés dans des boîtes quantiques de GaN/AlN insérées dans des nano-fils. Nous avons d’abord mis en évidence un taux important de polarisation de la photoluminescence (15 %) à basse température sous excitation quasi-résonante et nous avons démontré que cette polarisation est temporellement constante pendant la durée de vie des excitons. Grâce à des mesures en température, nous avons aussi démontré que cette polarisation n’est aucunement affectée jusqu’à 300 K. Nous avons aussi développé un modèle détaillé basé sur la matrice densité pour décrire le dégré de polarisation de la photoluminescence et sa dépendance angulaire.Pour la deuxième approche, nous avons réalisé un dispositif prototype de filtrage de spin basé sur l’implantation de centres paramagnétiques dans des couches massives de InGaAs. Le principe repose sur la création de défauts interstitiels paramagnétiques comme précédemment démontré dans notre groupe pour les nitrures dilués tels que GaAsN. Le but de ce travail a été le développement d’un procédé de création de ces défauts qui puisse surmonter les inconvénients liés à l’insertion de l’azote dans les semiconducteurs de type GaAs : a) la dépendance de l’efficacité du filtrage de spin avec de l’énergie de photoluminescence, b) l’impossibilité de créer des zones actives avec des motifs spécifiques.Dans ce travail, nous démontrons que des régions actives de filtre à spin peuvent être créées par implantation ionique de défauts paramagnétiques avec une densité et des motifs spatiaux prédéfinis. Grâce à des études par photoluminescence, nous avons d’une part mis en évidence des taux de recombinaison dépendant en spin pouvant aller jusqu’à 240 % dans les zones implantées. D’autre part, nous avons déterminé la dose d’implantation la plus favorable grâce à une étude systématique sur différents échantillons implantés avec des densités ioniques étendues sur quatre ordres de grandeurs. Nous avons également observé que l’application d’un champ magnétique externe produit une augmentation significative du taux de recombinaison dépendant en spin due à la polarisation en spin des noyaux implantés
This thesis work is a contribution to the investigation by photoluminescence spectroscopy of the spin properties of III-V semiconductors with possible applications to the emerging semiconductor spintronics field. Two approaches have been explored in this work to achieve a long and robust spin polarization: i) Spatial confinement of the carriers in 0D nanostructured systems (quantum dots). ii) Defect engineering of paramagnetic centres in a bulk systems. Concerning the first approach, we have investigated the polarization properties of excitons in nanowire-embedded GaN/AlN quantum dots. We first evidence a low temperature sizeable linear polarization degree of the photoluminescence (~15 %) under quasi-resonant excitation with no temporal decay during the exciton lifetime. Moreover, we demonstrate that this stable exciton spin polarization is unaffected by the temperature up to 300 K. A detailed theoretical model based on the density matrix approach has also been developed to account for the observed polarization degree and its angular dependence.Regarding the second approach, we have demonstrated a proof-of-concept of conduction band spin-filtering device based on the implantation of paramagnetic centres in InGaAs epilayers. The principle relies on the creation of Ga interstitial defects as previously demonstrated in our group in dilute nitride GaAsN compounds. The driving force behind this work has been to overcome the limitations inherent to the introduction of N in the compounds: a) The dependence of the photoluminescence energy on the spin-filtering efficiency. b) The lack of spatial patterning of the active regions.In this work we show how the spin-filtering defects can be created by ion implantation creating a chosen density and spatial distribution of gallium paramagnetic centers in N-free epilayers. We demonstrate by photoluminescence spectroscopy that spin-dependent recombination (SDR) ratios as high as 240 % can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR are also determined by the systematic analysis of different ion doses spanning four orders of magnitude. We finally show how the application of a weak external magnetic field leads to a sizable enhancement of the SDR ratio from the spin polarization of the implanted nuclei

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O'Sullivan, Eoin. « Electronic states and dynamics in semiconductor structures ». Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325987.

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De, Amritanand Pryor Craig E. « Spin dynamics and opto-electronic properties of some novel semiconductor systems ». [Iowa City, Iowa] : University of Iowa, 2009. http://ir.uiowa.edu/etd/352.

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De, Amritanand. « Spin dynamics and opto-electronic properties of some novel semiconductor systems ». Diss., University of Iowa, 2009. https://ir.uiowa.edu/etd/352.

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A set of problems pertaining to quantum information processing in semiconductors is investigated. Two schemes for implementing electronic qubits in strong and weak three dimensional quantum confinement regimes are studied along with their related electronic properties. Recent experiments motivated us to calculate electronic properties and g factors for nanowhisker quantum dots. These calculations were done using 8 band strain dependent k.p theory on a 3D grid and are in excellent agreement with experiment. It has been observed that the growth conditions cause the nanowhiskers to crystallize in wurtzite(WZ) form instead of their stable-phase zinc-blende bulk structure. Very little is known about the WZ phase of non-nitride III-V semiconductors as they do not naturally occur. We have therefore also predicted the electronic bandstructure and optical properties of nine III-V semiconductors in the WZ phase using transferable empirical pseudopotentials. Apart from quantum dots, the spin of an electron bound to an atomic impurity is an attractive candidate for quantum information processing as they do not suffer from structural uncertainties. This makes spin of an electron bound to a hydrogenic impurity an attractive candidate for a qubit as it possess the biggest radii of any ionic bound states in the solid and is a natural two state system. We have calculated the electric and magnetic field dependent modulation of the g tensor for a single Silicon donor embedded in a GaAs substrate. The spin dynamics of the weakly bound electron exhibits an unusual nonlinear behavior, which is not seen in structures with strong quantum confinement such as quantum dots.

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Birkett, M. J. « Opto-electronic studies of semiconductor tunnelling structures and quantum wells ». Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267179.

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Ligorio, Giovanni. « Electronic and electrical properties of organic semiconductor/metal nanoparticles structures ». Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17561.

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Der zunehmende Bedarf nach digitalen Speichermedien macht die Erforschung von neuen Materialien für zukünftige Technologien von nichtflüchtigen Speichern nötig. Hierfür eignen sich zum Beispiel Metall-Nanopartikel, die in organischen Halbleiterschichten eingebettet sind. Aufgrund der bistabilen Schaltbarkeit der Leitfähigkeit von Metall-Nanopartikeln lassen sie sich in Abhängigkeit der elektrischen Umgebungsbedingungen entweder in einen niedrig- oder einen hochleitenden Zustand schalten. Bisher wurden verschiedene Modelle entwickelt, um den Schaltmechanismus von Speichern mit einem organischen Matrixmaterial zu erklären, jedoch fehlt bislang ein konsistentes Bild zum Verständnis des Schaltvorgangs. Die vorliegende Arbeit untersucht die Rolle des Raumladungsfeldes ausgehend von Metall-Nanopartikeln in Bauelementen. Dazu wurde eine Reihe von Experimenten zur Bestimmung der elektronischen und elektrischen Eigenschaften durchgeführt, um die tatsächliche Rolle des Raumladungsfeldes aufzuklären. Mit Hilfe von Röntgen- und UV-Photoelektronenspektroskopie wurde die Wechselwirkung zwischen den Metall-Nanopartikeln und den prototypischen organischen Halbleiterschichten detailliert untersucht. Unter Verwendung der bereits untersuchten Materialien wurden Bauelemente hergestellt und charakterisiert. Die Ergebnisse zeigen, dass der allgemein vorgeschlagene Mechanismus bezüglich der Aufladung/Entladung von Metall-Nanopartikeln als Ursache für die elektrische Bistabiliät in einem zweipoligen Bauteil ausgeschlossen werden kann. Stattdessen stützt dieses Ergebnis den alternativen Mechanismus der Filamentbildung. Zur Untersuchung der Skalierbarkeit der Speicher im Nanometerbereich wurden die Strukturen durch das Abscheiden der Materialien bei streifendem Einfall präpariert. Die entsprechenden Nanospeicher wurden elektrisch charakterisiert und zeigten Bistabilität. Folglich sind diese Nanspeicher besonders attraktiv für zukünftige Technologien in Hinblick auf hohe Speicherdichten.
The increasing need to store digital information has triggered research into the exploration of new materials for future non-volatile memory (NVM) technologies. For instance, metal nanoparticles (MNPs) embedded into organic semiconductors are suitable for novel memory applications because they were found to display bistable resistive switching. Different switching models were hitherto developed to explain the fundamental mechanisms at work in resistive NVMs. This thesis explores specifically the role of space-charge field due to the charging of MNPs as rationale for resistive switching in two-terminal devices. A series of experiments on the electronic and electrical properties of devices were conducted in order to reveal whether this mechanism is, indeed, at play in resistance switching. Photoelectron spectroscopy provided detailed information about the interaction between gold nanoparticles (AuNPs) with prototypical organic semiconductors used in optoelectronics. The study of the electronic valence structures provided evidence of a space-charge due to the charging of AuNPs. Furthermore, it is found that charge-neutrality of AuNPs can be dynamically re-established upon illumination, through electron transfer from excitons. Devices were built with the same materials investigated by photoemission spectroscopy and electrical characterization was conducted. Despite the previously demonstrated ability to optically change the charging state of the AuNPs, the devices do not display any bistability. This finding provides evidence that the commonly proposed charging/decharging mechanism of MNPs can be excluded as cause for electrical bistability in NVM devices. In order to explore the scaling of resistive NVMs into the nanometric range, glancing angle deposition technique was employed. The nano-NVMs were electrically characterized and it is proved to manifest resistive bistability. These finding make nano-NVMs highly appealing for future high-density memory technology.

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Olbrich, Peter [Verfasser]. « THz radiation induced spin polarized currents in low dimensional semiconductor structures / Peter Olbrich ». Regensburg : Univ.-Verl. Regensburg, 2010. http://d-nb.info/1007748214/34.

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Pugh, David Ian. « The design and investigation of hybrid ferromagnetic/silicon spin electronic devices ». Thesis, University of York, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341850.

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Peleckis, Germanas. « Studies on diluted oxide magnetic semiconductors for spin electronic applications ». Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Almeida, António José Sousa de. « Magnetic resonance studies of spin systems in semiconductor nanocrystals ». Doctoral thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/18636.

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Doutoramento em Física
Esta tese apresenta um estudo experimental de sistemas de spins fornecidos por dopantes electrónicos e por defeitos capturadores de carga em nanocristais (NCs) semiconductores, por meio de técnicas de ressonância magnética. Aqui, investigámos problemas que têm efeitos limitadores de performance nas propriedades de NCs semiconductores para o seu uso em aplicações tecnológicas. Nomeadamente, estudámos a dopagem electrónica de NCs semiconductores. A dopagem é crítica para controlar o comportamento de semiconductores, que de outra forma seriam isoladores. Investigámos também defeitos capturadores de carga, que podem ter um impacto negativo na conductividade de NCs semiconductores ao capturar portadores de carga em estados electrónicos deslocalizados de NCs. Para além disso, abordámos a origem da anisotropia magnética em NCs de materiais diamagnéticos. Nesta tese, reportamos investigações usando medidas de ressonância paramagnética electrónica (RPE) quantitativa, dizendo respeito à eficiência de dopagem electrónica de Si NCs com átomos de P e à sua dependência com o ambiente envolvendo os NCs. Das medidas de RPE quantitativas, estimamos eficiências de dopagem nos NCs que são consistentes com a incorporação da maioria dos dopantes P como dadores substitucionais nos NCs. Observamos também que a eficiência de dopagem dos NCs varia em várias ordens de grandeza dependendo do ambiente envolvendo os NCs, devido a uma forte compensação dos dadores por moléculas absorbidas na superfície dos NCs. Usando espectroscopia RPE dependente da temperatura, mostramos também que a energia de ionização dos dopantes P em Si NCs aumenta relativamente ao seu correspondente cristal macroscópico devido a confinamento. Usamos espectroscopia RPE dependente da temperatura para estudar a interacção entre múltiplos dopantes incorporados num único Si NC e o seu impacto na estrutura electrónica destes NCs. Monitorizámos experimentalmente a interacção de troca em pares de dadores P (dímeros de dadores) em Si NCs através de um desvio da ressonância magnética do seu estado tripleto em relação ao paramagnetismo de Curie. Mostrámos que a interacção de troca entre dadores próximos entre si pode ser bem descrita pela teoria de massa efectiva, permitindo o cálculo de muitas configurações de dopantes e permitindo a consideração de efeitos estatísticos cruciais em conjuntos de nanocristais. Descobrimos que dímeros de dadores induzem estados discretos num NC, e que a sua separação energética difere em até três ordens de grandeza para dímeros colocados aleatoriamente num conjunto de NCs devido a uma enorme dependência da energia de troca na configuração do dímero. Investigámos também sistemas de spins induzidos por defeitos capturadores de carga e como estes defeitos podem afectar a dopagem de NCs. Identificamos a presença de dois estados de carga de um defeito em NCs de CdSe usando espectroscopia RPE combinada com a afinação electrónica de NCs através de dopagem com Ag induzida quimicamente. A partir de de RPE foto-induzido, mostramos que estes defeitos têm um papel central na fixação do nível de Fermi em conjuntos de NCs. Através da análise da dependência do sinal de RPE dos defeitos com a concentração de dopantes de Ag, mostramos também que os defeitos actuam como capturadores efectivos de electrões nos NCs. Do RPE dependente da temperatura, estimamos um limite inferior para a energia de ionização dos defeitos estudados. Com base nas características do espectro RPE dos defeitos observados, propomos que está associado a lacunas de Se com o estado paramagnético sendo o estado positivo do defeito. Para além disso, mostramos que as interacções magnéticas entre spins associados a defeitos nos NCs podem induzir efeitos de anisotropia magnética em conjuntos de NCs que não são esperados acontecer no cristal macroscópico correspondente. Usando espectroscopia de ressonância ferromagnética (RFM) com dependência angular, medimos a anisotropia magnética em conjuntos de aleatórios de NCs de CdSe através da gravação do espectro de ressonância magnética para várias orientações do campo magnético externo. As dependências angulares do campo ressonante são diferente para conjuntos aparentemente similares de NCs de CdSe. Mostramos que a forma e amplitude da variação angular do RFM pode ser bem descrita po um modelo simples que toma em consideração as interacções dipolo-dipolo entre dipolos localizados na superfície dos NCs. Os dipolos na superfície podem originar de ligações pendentes em sítios da superfície que não estão passivados por ligantes. Dos nossos cálculos, descobrimos que para diferentes conjuntos aleatórios de NCs a força da anisotropia magnética induzida por interacções dipolo-dipolo pode tomar valores abrangendo quatro ordens de grandeza, dependendo do arranjo específico dos NCs no conjunto e da distribuição específica dos dipolos na superfície de cada NC. Esta enorme variabilidade pode justificar a disparidade de anisotropias magnéticas observada nas nossas experiências.
This thesis presents an experimental study of systems of spins provided by electronic dopants and by charge trapping defects in semiconductor NCs, by means of magnetic resonance spectroscopy techniques. Here, we have investigated issues that have performance-limiting effects on the properties of semiconductor NCs for their use in technological applications. Namely, we have studied the electronic doping of semiconductor NCs. Doping is critical to control the behavior of semiconductors, which would otherwise be electrically insulating. We have further investigated charge trapping defects in semiconductor NCs, which can have a negative impact on the conductivity of semiconductor NCs by capturing charge carriers from delocalized electronic states of the NCs. Moreover, we addressed the origin of magnetic anisotropy in NCs of diamagnetic materials. In this thesis, we report investigations using quantitative electron paramagnetic resonance (EPR) measurements concerning the efficiency of electronic doping of Si NCs with P atoms and its dependence on the environment surrounding the NCs. From quantitative EPR measurements, we estimate doping efficiencies in the NCs that are consistent with the incorporation of most P dopants as substitutional donors in the NCs. We further observe that the doping efficiency of the NCs varies by several orders of magnitude depending on the NCs surrounding environment due to a strong compensation of donors by molecules adsorbed to the NCs surface. Using temperature-dependent EPR spectroscopy, we further show that the ionization energy of P dopants in Si NCs increases with respect to their bulk counterpart due to confinement. We use temperature-dependent EPR spectroscopy to study the interaction between multiple P dopants incorporated in a single Si NC and its impact on the electronic structure of these NCs. We experimentally probe the exchange interaction in pairs of P donors (donor dimers) in Si NCs via a deviation of their triplet-state magnetic resonance from Curie paramagnetism. We showed that the exchange coupling of closely spaced donors can be well described by effective mass theory, enabling the calculation of many dopant configurations and allowing the consideration of statistical effects crucial in NC ensembles. We find that donor dimers induce discrete states in a NC, and that their energy splitting differs by up to three orders of magnitude for randomly placed dimers in a NC ensemble due to an enormous dependence of the exchange energy on the dimer configuration. We also investigate systems of spins induced by charge trapping defects and how these defects can affect the doping of NCs. We identify the presence of two charge states of a defect in CdSe NCs using EPR spectroscopy, combined with electronic tuning of NCs via chemically induced Ag doping. From light-induced EPR, we show that these defects have a central role on Fermi level pinning of NC ensembles. By analyzing the dependence of the EPR signal of the defects on the concentration of Ag dopants, we further demonstrate that the defects act as effective electron traps in the NCs. From temperaturedependent EPR, we estimate a lower limit for the ionization energy of the studied defects. Based on the characteristics of the EPR spectrum of the observed defect, we propose that it is associated to Se vacancies with the paramagnetic state being the positively charged state of the defect. Moreover, we show that magnetic interactions between spins associated to defects in NCs can induce magnetic anisotropy effects in NCs ensembles that are not expected to occur in their bulk counterpart. Using angulardependent ferromagnetic resonance (FMR) spectroscopy, we measure the magnetic anisotropy in different random ensembles of CdSe NCs by recording magnetic resonance spectra for various orientations of the external magnetic field. The observed angular dependencies of resonant field are different for apparently similar CdSe NC ensembles. We show that the shape and amplitude of the FMR angular variation can be well described by a simple model that considers magnetic dipole-dipole interactions between dipoles located at the NCs surface. The surface dipoles may originate from dangling bonds on surface sites that are not passivated by ligands. From our calculations, we find that for different random ensembles of NCs the strength of the magnetic anisotropy induced by dipole-dipole interactions may take values spanning four orders of magnitude, depending on the specific arrangement of the NCs in the ensemble and the specific distribution of the surface dipoles in each NC. This huge variability may justify the disparity of magnetic anisotropies observed in our experiments.

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Kalbitz, René. « Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures ». Phd thesis, Universität Potsdam, 2011. http://opus.kobv.de/ubp/volltexte/2011/5727/.

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Organic thin film transistors (TFT) are an attractive option for low cost electronic applications and may be used for active matrix displays and for RFID applications. To extend the range of applications there is a need to develop and optimise the performance of non-volatile memory devices that are compatible with the solution-processing fabrication procedures used in plastic electronics. A possible candidate is an organic TFT incorporating the ferroelectric co-polymer poly(vinylidenefluoride-trifluoroethylene)(P(VDF-TrFE)) as the gate insulator. Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) as the gate insu-lator. The capacitance spectra of MIS devices, were measured under different biases, showing the effect of charge accumulation and depletion on the Maxwell-Wagner peak. The position and height of this peak clearly indicates the lack of stable depletion behavior and the decrease of mobility when increasing the depletion zone width, i.e. upon moving into the P3HT bulk. The lack of stable depletion was further investigated with capacitance-voltage (C-V) measurements. When the structure was driven into depletion, C-V plots showed a positive flat-band voltage shift, arising from the change in polarization state of the ferroelectric insulator. When biased into accumulation, the polarization was reversed. It is shown that the two polarization states are stable i.e. no depolarization occurs below the coercive field. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flat-band voltage expected during the sweep to accumulation voltages. The measured output characteristics of the studied ferroelectric-field-effect transistors confirmed the results of the C-V plots. Furthermore, the results indicated a trapping of electrons at the positively charged surfaces of the ferroelectrically polarized P(VDF-TrFE) crystallites near the insulator/semiconductor in-terface during the first poling cycles. The study of the MIS structure by means of thermally stimulated current (TSC) revealed further evidence for the stability of the polarization under depletion voltages. It was shown, that the lack of stable depletion behavior is caused by the compensation of the orientational polarization by fixed electrons at the interface and not by the depolarization of the insulator, as proposed in several publications. The above results suggest a performance improvement of non-volatile memory devices by the optimization of the interface.
Organische Transistoren sind besonders geeignet für die Herstellung verschiedener preisgünstiger, elektronischer Anwendungen, wie zum Beispiel Radio-Frequenz-Identifikations-Anhänger (RFID). Für die Erweiterung dieser Anwendung ist es notwendig die Funktion von organischen Speicherelementen weiter zu verbessern. Das ferroelektrische Polymer Poly(vinylidene-Fluoride-Trifluoroethylene) (P(VDF-TrFE)) eignet sich besonders gut als remanent polarisierbarer Isolator in Dünnschich-Speicherelementen. Um Schalt- und Polarisationsverhalten solcher Speicherelemente zu untersuchen, wurden P(VDF-TrFE)-Kondensatoren und Metall-Halbleiter-Isolator-Proben sowie ferroelektrische Feld-Effekt-Transistoren (Fe-FET) aus dem Halbleiter Poly(3-Hexylthiophene) (P3HT) und P(VDF-TrFE) hergestellt und dielektrisch untersucht. Die Charakterisierung der MIS-Strukturen mittels spannungsabhängiger Kapazitätsspektren machte deutlich, dass es nicht möglich ist, einen stabilen Verarmungzustand (Aus-Zustand) zu realisieren. Kapazität-Spannungs-Messungen (C-V) an MIS-Proben mit uni/bi-polaren Spannungszyklen zeigten eine stabile ferroelektrische Polarisation des P(VDF-TrFE)-Films. Eine Depolarisation des Isolators durch den Mangel an Minoritäts-Ladungsträgern konnte als Grund für die Instabilität des Verarmungs-Zustandes ausgeschlossen werden. Die C-V-Kurven wiesen vielmehr auf die Existenz fixierter, negativer Ladungsträger an der Grenzfläche hin. Zusammenfassend kann festgestellt werden: die Ursache der Ladungsträgerinstabilitäten in organischen ferroelektrischen Speicherelementen ist auf die Kompensation der ferroelektrischen Orientierungspolarisation durch "getrappte"(fixierte) negative Ladungsträger zurückzuführen. Dieses Ergebnis liefert nun eine Grundlage für die Optimierung der Isolator/Halbleiter-Grenzfläche mit dem Ziel, die Zahl der Fallenzustände zu minimieren. Auf diesem Wege könnte die Stabilität des Speicherzustandes in organischen Dünnschichtspeicherelementen deutlich verbessert werden.

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Evaldsson, Martin. « Quantum transport and spin effects in lateral semiconductor nanostructures and graphene ». Doctoral thesis, Norrköping : Department of Science and technology, Linköping University, 2008. http://www.bibl.liu.se/liupubl/disp/disp2008/tek1202s.pdf.

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Sergentu, Dumitru-Claudiu. « Géométries, electronic structures, and physico-chemical porperties of astatine species : an application of relativistic quantum mechanics ». Thesis, Nantes, 2016. http://www.theses.fr/2016NANT4024/document.

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Les tentatives menées pour détruire des cellules cancéreuses avec les agents radiothérapeutiques à base de 211 At qui ont été synthétisés jusqu’à présent ne sont pas encore pleinement satisfaisantes car elles sont entachées par une deastatination in vivo. Étant donné que ce problème est lié aux connaissances actuelles qui sont limitées concernant la chimie de base de l’astate et de ses espèces, des recherches fondamentales combinant des expériences à l’échelle des ultra-traces et des études théoriques ont été lancées. Dans cette thèse, une étude théorique de plusieurs espèces de l’astate est réalisée au moyen de méthodes relativistes basées sur la théorie de la fonctionnelle de la densité ou des méthodes à basées sur la fonction d’onde. Tout d'abord, les méthodes qui peuvent être utilisées pour faire des prédictions pertinentes sont établies. A l’aide de ces approches, nous rationaliserons les structures électroniques, géométries et propriétés physicochimiques des différents systèmes d'intérêt théorique ou expérimental, en particulier les espèces AtF3 et AtO+. Finalement, nous identifierons formellement une nouvelle espèce de l’astate à l’aide de résultats expérimentaux et de calculs, ce qui non seulement complète le diagramme de Pourbaix de l’astate en milieu aqueux non complexant, mais aussi donne des informations cruciales pour identifier des conditions expérimentales pour rendre le plus « réactif » possible le précurseur At−, qui est de nos jours impliqué dans la synthèse d’agents radiothérapeutiques innovants
Trials to destroy cancer cells with currently synthesized 211 At-based radiotherapeutic agents are not yet fully satisfactorily since they resume to in vivo deastatination. Since this issue is related to the limited knowledge of the basic chemistry of At and its species, fundamental researches combining ultra-trace experiments and computational studies have been initiated. In this thesis, a computational study of several At species is performed, by means of relativistic density functional theory and wave-function-based calculations. First, the quantum mechanical approaches that can safely be used to make adequate predictions are established. Using these approaches, we attempt to rationalize the electronic structures, geometries, and physico-chemical properties of various systems of theoretical and/or experimental interest, in particular the AtF3 and AtO+ ones. By the end, we firmly identify a new At species by combining outcomes of experiments and calculations. This new species not only completes the Pourbaix diagram of At in aqueous and non-complexing media, but also gives clues of identifying experimental conditions to make best reactive the At– precursor, which is currently involved in the synthesis of promising radiotherapeutic agents

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Dikmen, Bora. « Numerical Studies Of The Electronic Properties Of Low Dimensional Semiconductor Heterostructures ». Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/2/12605473/index.pdf.

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An efficient numerical method for solving Schrö
dinger'
s and Poisson'
s equations using a basis set of cubic B-splines is investigated. The method is applied to find both the wave functions and the corresponding eigenenergies of low-dimensional semiconductor structures. The computational efficiency of the method is explicitly shown by the multiresolution analysis, non-uniform grid construction and imposed boundary conditions by applying it to well-known single electron potentials. The method compares well with the results of analytical solutions and of the finite difference method.

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Ehara, Masahiro. « Theoretical Studies on the Electronic Structures of Molecules in Excited, Ionized, and High-Spin States ». Kyoto University, 1993. http://hdl.handle.net/2433/74638.

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Chen, Yuansen [Verfasser], Gerd [Akademischer Betreuer] Bacher et Roland [Akademischer Betreuer] Schmechel. « On-chip spin control in semiconductor micro- and nano-structures / Yuansen Chen. Gutachter : Roland Schmechel. Betreuer : Gerd Bacher ». Duisburg, 2013. http://d-nb.info/1031417141/34.

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Sladek, Kamil Przemyslaw [Verfasser]. « Realization of III-V semiconductor nano structures towards more efficient (otpo-) electronic devices / Kamil Przemyslaw Sladek ». Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2013. http://d-nb.info/1044570423/34.

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Nakamura, A., T. Ito, H. Ohnishi, A. Koizumi et Y. Takeda. « Magnetotransport and Antiferromagnetic Behavior in ErP Epitaxial Layers on GaInP(001) ». American Institite of Physics, 2007. http://hdl.handle.net/2237/12036.

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Hoy, Daniel R. « Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping ». The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

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Dagnelund, Daniel. « Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures ». Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.

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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.

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Schuwalow, Sergej [Verfasser], et Frank [Akademischer Betreuer] Lechermann. « Magnetic adatom structures on semiconductor surfaces in presence of strong electronic correlations / Sergej Schuwalow. Betreuer : Frank Lechermann ». Hamburg : Staats- und Universitätsbibliothek Hamburg, 2012. http://d-nb.info/1027573967/34.

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Rosenthal, Paul Arthur. « Characterization of structural and electronic properties of nanoscale semiconductor device structures using cross-sectional scanning probe microscopy / ». Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3059906.

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Yang, Rong. « ATOMIC-SCALE AND SPIN STRUCTURE INVESTIGATIONS OF MANGANESE NITRIDE AND RELATED MAGNETIC HYBRID STRUCTURES PREPARED BY MOLECULAR BEAM EPITAXY ». Ohio University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1152124059.

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Brown, Richard Matthew. « Coherent transfer between electron and nuclear spin qubits and their decoherence properties ». Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:21e043b7-3b72-44d7-8095-74308a6827dd.

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Conventional computing faces a huge technical challenge as traditional transistors will soon reach their size limitations. This will halt progress in reaching faster processing speeds and to overcome this problem, require an entirely new approach. Quantum computing (QC) is a natural solution oﬀering a route to miniaturisation by, for example, storing information in electron or nuclear spin states, whilst harnessing the power of quantum physics to perform certain calculations exponentially faster than its classical counterpart. However, QCs face many diﬃculties, such as, protecting the quantum-bit (qubit) from the environment and its irreversible loss through the process of decoherence. Hybrid systems provide a route to harnessing the beneﬁts of multiple degrees of freedom through the coherent transfer of quantum information between them. In this thesis I show coherent qubit transfer between electron and nuclear spin states in a ¹⁵N@C₆₀ molecular system (comprising a nitrogen atom encapsulated in a carbon cage) and a solid state system, using phosphorous donors in silicon (Si:P). The propagation uses a series of resonant mi- crowave and radiofrequency pulses and is shown with a two-way ﬁdelity of around 90% for an arbitrary qubit state. The transfer allows quantum information to be held in the nuclear spin for up to 3 orders of magnitude longer than in the electron spin, producing a ¹⁵N@C₆₀ and Si:P ‘quantum memory’ of up to 130 ms and 1.75 s, respectively. I show electron and nuclear spin relaxation (T₁), in both systems, is dominated by a two-phonon process resonant with an excited state, with a constant electron/nuclear T₁ ratio. The thesis further investigates the decoherence and relaxation properties of metal atoms encapsulated in a carbon cage, termed metallofullerenes, discovering that exceptionally long electron spin decoherence times are possible, such that these can be considered a viable QC candidate.

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Hentschel, Martina. « Mesoscopic wave phenomena in electronic and optical ring structures ». Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2001. http://nbn-resolving.de/urn:nbn:de:swb:14-1008319980781-38394.

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Gegenstand dieser Arbeit sind Wellenphänomene in mesoskopischen Ringstrukturen. In Teil I der Arbeit befassen wir uns mit spinabhängigem Transport von Elektronen in effektiv eindimensionalen Ringen in Gegenwart inhomogener Magnetfelder. Wir benutzen die exakten Lösungen der Schrödinger-Gleichung im allgemeinen nicht-adiabatischen Fall in einem Transfer-Matrix-Formalismus und untersuchen Auswirkungen von geometrischen Phasen auf den Magnetwiderstand. Für den Spezialfall eines Magnetfeldes in der Ringebene sagen wir einen interessanten Spin-Flip-Effekt vorher, der die Steuerung der Polarisationsrichtung von Elektronen über einen externen Aharonov-Bohm-Fluß erlaubt. Optische mesoskopische Systeme sind Thema von Teil II dieser Arbeit. Wir betrachten zweidimensionale annulare Strukturen, charakterisiert durch unterschiedliche Brechungsindizes, sowohl im klassischen Bild der geometrischen Optik als auch mit Wellenmethoden auf der Grundlage der Maxwellschen Gleichungen. Insbesondere diskutieren wir erstmals eine Streumatrixbeschreibung optischer Mikroresonatoren und wenden sie auf das dielektrische annulare Billard an. Ein Vergleich der Ergebnisse des Wellen- und Strahlenbildes liefert eine gute Übereinstimmung, jedoch sind im Grenzfall großer Wellenlängen von der Ordnung der Systemabmessungen Korrekturen zum Strahlenbild nötig. Wir zeigen am Beispiel von Fresnel-Gesetzen für gekrümmte Oberflächen erstmals, daß der Goos-Hänchen-Effekt diese Korrekturen quantitativ erfaßt. Ausgehend von der Wellenbeschreibung leiten wir neue analytische Formeln für verallgemeinerte Fresnel-Gesetze für beide möglichen Polarisationsrichtungen ab. Die Anwendung des Strahlenbildes erlaubt eine schlüssige Interpretation eines Experiments mit einer quadrupolaren Glasfaser, außerdem schlagen wir Strahlenkonzepte als Grundlage der Konstruktion von Mikrolasern mit maßgeschneiderten Charakteristika vor
In this work we investigate wave phenomena in mesoscopic systems using different theoretical approaches. In Part I, we focus on effectively one-dimensional electronic ring structures and address the phenomenon of geometric phases in spin-dependent electronic transport in the presence of non-uniform magnetic fields. In the general non-adiabatic case, exact solutions of the Schrödinger equation are used in a transfer matrix formalism to compute the transmission probability through the ring. In the magneto-conductance we identify clear signatures of interference effects due to geometric phases, for example in rings where the non-uniform field is created by a central micromagnet. For the special case of an in-plane magnetic field we predict an interesting spin-flip effect that allows one to control the spin polarization of electrons by applying an external Aharonov-Bohm flux. Optical mesoscopic systems are the subject of Part II. We consider two-dimensional annular structures characterized by different refractive indices, and apply classical methods from geometric optics as well as wave concepts based on Maxwell's equations. For the first time, an S-matrix approach is successfully employed in the description of resonances in optical microresonators; in particular we propose the dielectric annular billiard as an attractive model system. Comparing ray and wave pictures, we find general agreement, except for large wavelengths of the order of the system size, where corrections to the ray model are necessary. The Goos-Hänchen effect as an extension of the ray picture is shown to quantitatively account for wave modifications of Fresnel's laws due to curved interfaces. We derive novel analytical expressions for the corrected Fresnel formulas for both polarizations of light. Motivated by the successful ray description, we give a conclusive interpretation of a recent filter experiment on a quadrupolar glass fibre, and suggest novel concepts for microresonator-based lasers

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Zhou, Ruiping. « Structural And Electronic Properties of Two-Dimensional Silicene, Graphene, and Related Structures ». Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1341867892.

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Liang, Tao. « Atomic-scale calculations of interfacial structures and their properties in electronic materials ». Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1127163029.

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Thesis (Ph. D.)--Ohio State University, 2005.
Title from first page of PDF file. Document formatted into pages; contains xvi, 136 p.; also includes graphics (some col.). Includes bibliographical references (p. 125-136). Available online via OhioLINK's ETD Center

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Ligorio, Giovanni [Verfasser], Norbert [Gutachter] Koch, Mats [Gutachter] Fahlman et Alessio [Gutachter] Gagliardi. « Electronic and electrical properties of organic semiconductor/metal nanoparticles structures / Giovanni Ligorio. Gutachter : Norbert Koch ; Mats Fahlman ; Alessio Gagliardi ». Berlin : Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://d-nb.info/1109846525/34.

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Andreev, Sergueï. « La condensation de Bose-Einstein des excitons indirects dans des nano-structures semi-conductrices ». Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20046.

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Cette thèse est dédiée à l'interprétation théorique des expériences sur les gaz froids des excitons indirects dans des nanostructures semi-conductrices. La théorie proposée explique la formation de l'état des excitons macroscopiquement ordonnés ("MOES") et des taches lumineuses localisées dans les images de photoluminescence des excitons. Dans la première partie je montrerai que la séparation macroscopique de charge induite par laser mène à l'apparition d'un champ électrique situé dans le plan de la structure. A cause de ce champ les états quantiques 1s et 2p de l'exciton se croisent et son moment dipolaire s'incline. Par conséquent, l'exciton va se localiser à la frontière entre les deux domaines d'une charge différente, où le champ électrique est le plus fort. Ensuite, j'étudierai un gaz d'excitons mis dans de tels pièges bidimensionnels en négligeant sa structure de spin. J'analyserai la possibilité de la condensation de Bose-Einstein dans le système considéré en utilisant les méthodes puissantes de la théorie à N-corps développées pour des gaz atomiques. En me basant sur le Hamiltonien pour un segment du cercle bidimensionnel ("2D cigar"), je montrerai que la dispersion cohérente des excitons mène à l'autolocalisation accompagnée par une modulation périodique de la densité. L'idée principale de la théorie est, ensuite, de modéliser cet état périodique par une chaîne de condensats piégés (Le Modèle de Chaîne). Un tel modèle permettra de dire que le système peut exhiber la transition de phase de second ordre pour certaines valeurs du paramètre qui caractérise les interactions. La valeur critique de ce paramètre peut être trouvée en analysant le comportement des fluctuations de phase à la température nulle. Le nombre de condensats dans le régime où les interactions sont fortes est déterminé par la balance entre les contributions de l'énergie cinétique est l'entropie dans l'énergie libre du système. Le Modèle de Chaîne permettra aussi de révéler l'invariance d''échelle et l'universalité du phénomène. J'obtiendrai l'expression pour la température unique de la transition de phase dans le système excitonique et discuterai l'effet de désordre. Je finirai par une discussion du rôle des interactions à N-corps et des effets de spin dans la condensation de Bose-Einstein des excitons. Je proposerai un modèle de gaz idéal pour décrire les textures de polarisation linéaire observées autour de chaque tache lumineuse et chaque fragment de MOES. Selon ce modèle, le domaine central incohérent de tous ces objets est composé d'une glace excitonique quantique
The present Thesis is devoted to theoretical interpretation of intriguing observations made recently in cold gases of indirect excitons in semiconductor quantum wells. The proposed theory provides simple intuitive explanation for the basic phenomenology of the macroscopically ordered exciton state (MOES) and the localized bright spots (LBS) in the exciton photoluminescense pattern. The Thesis is organized as follows.First, we provide an important insight into the formation process of the external ring and LBS. We show that the macroscopic charge separation induced by the photoexcitation results in appearance of an in-plane electric field in the vicinity of the boundary. The field hybridizes 1s and 2p quantum states of an indirect exciton, effectively tilting its dipole moment. Thus polarized exciton seeks for the regions with higher in-plane electric field and, hence, becomes localized at the ring-shaped boundary.As a next step, we consider a gas of spinless dipolar bosons put in such two-dimensional (2D) traps. We analyze the possibility for occurence of Bose-Einstein condensation (BEC) in the system under consideration by means of the powerful many-body theoretical methods developed for ultracold atomic gases. Starting from the Hamiltonian for a segment of the ring (2D cigar) we show, howthe coherent scattering of excitons can result in autolocalization accompanied by a buildup of the diagonal long-range order. The crucial point of the theory then consists in replacement of the periodic coherent state by a chain of harmonically trapped condensates (Chain Model). We argue, that for sufficiently strong contact interaction between the excitons the system can exhibit the true second order phase transistion at finite temperature. The critical value of the interaction parameter can be found by analyzing the behaviour of the quantum phase fluctuations at zero temperature. The number of condensates at the ring in the strongly interacting regime is defined by the balance between the kinetic energy and the entropy terms in the free energy of the system.Futhermore, the use of the Chain Model of the MOES allows one to reveal scale invariance and universality of the pnenomenon. We obtain the expression for the unique critical temperature of the second order phase transition in the exciton system and discuss the effect of disorder.Finally, we comment on the role of many-body interactions and spin degrees of freedom in excitonic BEC. We suggest that each bead (or, equivalently, LBS) has the internal structure: it consists of a solid core (Quantum Exciton Iceberg) surrounded by a coherent exciton fluid. We develop an ideal gas model for the coherent four-component exciton fluid which allows one to explain the measured linear polarization patterns

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35

Marrujo, Mike Madrid. « FABRICATION AND CHARACTERIZATION OF TORSIONAL MICRO-HINGE STRUCTURES ». DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/802.

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ABSTRACT Fabrication and Characterization of Torsional Micro-Hinge Structures Mike Marrujo There are many electronic devices that operate on the micrometer-scale such as Digital Micro-Mirror Devices (DMD). Micro actuators are a common type of DMD that employ a diaphragm supported by torsional hinges, which deform during actuation and are critical for the devices to have high stability and reliability. The stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. Electrostatically driven micro actuators observe to have a fully recoverable non-linear viscoelastic response. The device consists of a micro-hinge which is suspended by two hinges that sits inside a micro machined well. To achieve a specific angle of rotation when actuated, the mechanical forces need to be characterized with a range of different forces applied to the edge of the micro-hinge. This research investigates the mechanical properties and the amount of force needed to rotate to specific angles by comparing theoretical performance to experimentally measured values. Characterizing the mechanical forces on the micro-hinge will further the understanding of how the device operates under a specific applied force. The material response to the amount of stress within the hinges will control the amount of actuation that is achieved by that force. The test devices were fabricated using common semiconductor fabrication techniques. The micro-hinge device was created on a 500µm, double-sided polished, single crystal (100) silicon wafer. In order to create this device, both wet etching and dry etching techniques were employed to produce an 8µm thick plate structure. The bulk etching of 480µm was achieved by wet etching down into the silicon (Si) to create the wells. Dry etching was used for its high precision to release the micro-hinge structure. Once fabricated, the micro-hinge actuators were tested using a Technics turntable arm with a built in micrometer that applied a constant force while measuring the displacement of the actuator. The rotation of the hinge was measured by reflecting a Helium-Neon (HeNe) laser beam off a mirror, which is attached to the pivot of the arm that’s applying the force, and any type of displacement was recorded with a Photo Sensitive Device (PSD). The test stand applied a small force which replicated the amount of electrostatic forces needed to achieve a specific degree of rotation. Results indicate that the micro-hinge achieved a repeatable amount of rotation when forces were applied to it. The micro-hinge would endure deformation when too much force would be applied and yield a maximum amount of force allowed.

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Hsieh, Chang-Yu. « Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots ». Thesis, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/20738.

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In this thesis, I present a microscopic theory of quantum circuits based on interacting electron spins in quantum dot molecules. We use the Linear Combination of Harmonic Orbitals-Configuration Interaction (LCHO-CI) formalism for microscopic calculations. We then derive effective Hubbard, t-J, and Heisenberg models. These models are used to predict the electronic, spin and transport properties of a triple quantum dot molecule (TQDM) as a function of topology, gate configuration, bias and magnetic field. With these theoretical tools and fully characterized TQDMs, we propose the following applications: 1. Voltage tunable qubit encoded in the chiral states of a half-filled TQDM. We show how to perform single qubit operations by pulsing voltages. We propose the "chirality-to-charge" conversion as the measurement scheme and demonstrate the robustness of the chirality-encoded qubit due to charge fluctuations. We derive an effective qubit-qubit Hamiltonian and demonstrate the two-qubit gate. This provides all the necessary operations for a quantum computer built with chirality-encoded qubits. 2. Berry's phase. We explore the prospect of geometric quantum computing with chirality-encoded qubit. We construct a Herzberg circuit in the voltage space and show the accumulation of Berry's phase. 3. Macroscopic quantum states on a semiconductor chip. We consider a linear chain of TQDMs, each with 4 electrons, obtained by nanostructuring a metallic gate in a field effect transistor. We theoretically show that the low energy spectrum of the chain maps onto that of a spin-1 chain. Hence, we show that macroscopic quantum states, protected by a Haldane gap from the continuum, emerge. In order to minimize decoherence of electron spin qubits, we consider using electron spins in the p orbitals of the valence band (valence holes) as qubits. We develop a theory of valence hole qubit within the 4-band k.p model. We show that static magnetic fields can be used to perform single qubit operations. We also show that the qubit-qubit interactions are sensitive to the geometry of a quantum dot network. For vertical qubit arrays, we predict that there exists an optimal qubit separation suitable for the voltage control of qubit-qubit interactions.

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Zhao, Hongming. « ETUDE EXPERIMENTALE DE LA PROPRIETE DE COUPLAGE SPIN-ORBITE DANS DES STRUCTURES SEMI-CONDUCTRICES DE BASSE DIMENSIONALITE ». Phd thesis, Université de Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00595906.

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Nous avons étudié les propriétés optiques et le couplage spin-orbite dans différentes structures semi-conductrices de basse dimension. Tout d'abord, la dynamique de spin dans des gaz d'électrons bidimensionnels d'une hétérostructure GaAs/AlGaAs (001) a été étudiée par la technique de rotation Kerr résolue en temps. Les résultats montrent que la durée de vie du spin dans le plan du puits est anisotrope et que la densité des électrons affecte fortement le couplage spin-orbite de type Rashba. Nous avons observé ensuite une grande anisotropie du facteur g de l'électron dans des puits quantiques GaAs/AlGaAs (001) asymétriques, et la dépendance en température de son amplitude a été mesurée. Deuxièmement, nous avons fait l'étude expérimentale du dédoublement du spin électronique dans le plan des puits GaN/AlGaN C(0001) à température ambiante. La mesure du courant de l'effet photo-galvanique circulaire montre clairement un dédoublement isotrope dans le plan du puits. Troisièmement, les premières mesures du facteur g dans des films minces de GaAsN à température ambiante a été faite par la technique de rotation Kerr résolue en temps. Elles montrent que le facteur g peut être modifié drastiquement par l'introduction d'une petite quantité d'azote dans GaAs. Enfin, les caractéristiques optiques de transitions indirectes dans des séries de nano-bâtonnets linéaire CdTe/CdSe/CdTe de taille et de forme variables ont été étudiées par photoluminescence stationnaire et résolue en temps. Nos résultats montrent le transfert progressif d'une transition optique directe (type I) au sein de CdSe vers une transition indirecte (type II) entre CdSe/CdTe à mesure que la longueur des nano-bâtonnets augmente.

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Aganoglu, Ruzin. « Non-linear Optical Properties Of Two Dimensional Quantum Well Structures ». Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/3/12607089/index.pdf.

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In this work optical properties of two dimensional quantum well structures are studied. Variational calculation of the eigenstates in an isolated quantum well structure with and without the external electrical field is presented. At weak fields a quadratic Stark shift is found whose magnitude depends strongly on the finite well depth. It is observed that under external electrical field, the asymmetries due to lack of inversion symmetry leads to higher order nonlinear optical effects such as second order optical polarization and second order optical susceptibility.

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Roe, Austin R. « RESONANT ACOUSTIC WAVE ASSISTED SPIN-TRANSFER-TORQUE SWITCHING OF NANOMAGNETS ». VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/6029.

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We studied the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of resonant surface acoustic waves (r-SAW) and spin-transfer-torque (STT). The magnetization dynamics were simulated using the Landau-Lifshitz-Gilbert equation under macrospin assumption with the inclusion of thermal noise. We studied such r-SAW assisted STT switching of nanomagnets for both in-plane elliptical and circular perpendicular magnetic anisotropy (PMA) nanomagnets and show that while thermal noise affects switching probability in in-plane nanomagnets, the PMA nanomagnets are relatively robust to the effect of thermal noise. In PMA nanomagnets, the resonant magnetization dynamics builds over few 10s of cycles of SAW application that drives the magnetization to precess in a cone with a deflection of ~45⁰ from the perpendicular direction. This reduces the STT current density required to switch the magnetization direction without increasing the STT application time or degrading the switching probability in the presence of room temperature thermal noise. This could lead to a pathway to achieve energy efficient switching of spin-transfer-torque random access memory (STT-RAM) based on p-MTJs whose lateral dimensions can be scaled aggressively despite using materials with low magnetostriction by employing resonant excitation to drive the magnetization away from the easy axis before applying spin torque to achieve a complete reversal.

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Trieu, Simeon S. « Enhanced Light Extraction Efficiency from GaN Light Emitting Diodes using Photonic Crystal Grating Structures ». DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/329.

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Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom gratings, error gratings, 3-fold symmetric photonic crystal, and 2-fold symmetric nano-imprinted gratings. PKU used our simulation results to fabricate GaN high brightness LEDs from the results of our simulation models. We employed the use of the finite difference time domain (FDTD) method, a computational electromagnetic solution to Maxwell’s equations, to measure light extraction efficiency improvements of the various grating structures. Since the FDTD method was based on the differential form of Maxwell’s equations, it arbitrarily simulated complex grating structures of varying shapes and sizes, as well as the reflection, diffraction, and dispersion of propagating light throughout the device. We presented the optimized case, as well as the optimization trend for each of the single grating structures within a range of simulation parameters on the micron scale and find that single grating structures, on average, doubled the light extraction efficiency of GaN LEDs. Photonic crystal grating research in the micron scale suggested that transmission gratings benefit most when grating cells tightly pack together, while reflection gratings benefit when grating cells space further apart. The total number of grating cells fabricated on a reflection grating layer still affects light extraction efficiency. For the top and bottom grating structures, we performed a partial optimization of the grating sets formed from the optimized single grating cases and found that the direct pairing of optimized single grating structures decreases overall light extraction efficiency. However, through a partial optimization procedure, top and bottom grating designs could improve light extraction efficiency by 118% for that particular case, outperforming either of the single top or bottom grating cases alone. Our research then explored the effects of periodic, positional perturbation in grating designs and found that at a 10-15% randomization factor, light extraction efficiency could improve up to 230% from the original top and bottom grating case. Next, in an experiment with PKU, we mounted a 2-fold symmetric photonic crystal onto a PDMS hemi-cylinder by nano-imprinting to measure the transmission of light at angles from near tangential to normal. Overall transmission of light compared with the non-grating design increases overall light extraction efficiency when integrated over the range of angles. Finally, our research focused on the 3-fold symmetric photonic crystal grating structure and employed the use of 3-D FDTD methods and incoherent light sources to better study the effects of higher-ordered symmetry in grating design. Grating cells were discovered as the source of escaping light from the GaN LED model. The model revealed that light extraction efficiency and the far-field diffraction pattern could be estimated by the position of grating cells in the grating design.

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Lindblad, Rebecka. « Electronic Structures and Energy Level Alignment in Mesoscopic Solar Cells : A Hard and Soft X-ray Photoelectron Spectroscopy Study ». Doctoral thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-221450.

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Photoelectron spectroscopy is an experimental method to study the electronic structure in matter. In this thesis, a combination of soft and hard X-ray based photoelectron spectroscopy has been used to obtain atomic level understanding of electronic structures and energy level alignments in mesoscopic solar cells. The thesis describes how the method can be varied between being surface and bulk sensitive and how to follow the structure linked to particular elements. The results were discussed with respect to the material function in mesoscopic solar cell configurations. The heart of a solar cell is the charge separation of photoexcited electrons and holes, and in a mesoscopic solar cell, this occurs at interfaces between different materials. Understanding the energy level alignment between the materials is important for developing the function of the device. In this work, it is shown that photoelectron spectroscopy can be used to experimentally follow the energy level alignment at interfaces such as TiO2/metal sulfide/polymer, as well as TiO2/perovskite. The electronic structures of two perovskite materials, CH3NH3PbI3 and CH3NH3PbBr3 were characterized by photoelectron spectroscopy and the results were discussed with support from quantum chemical calculations. The outermost levels consisted mainly of lead and halide orbitals and due to a relatively higher cross section for heavier elements, hard X-ray excitation was shown useful to study the position as well as the orbital character of the valence band edge. Modifications of the energy level positions can be followed by core level shifts. Such studies showed that a commonly used additive in mesoscopic solar cells, Li-TFSI, affected molecular hole conductors in the same way as a p-dopant. A more controlled doping can also be achieved by redox active dopants such as Co(+III) complexes and can be studied quantitatively with photoelectron spectroscopy methods. Hard X-rays allow studies of hidden interfaces, which were used to follow the oxidation of Ti in stacks of thin films for conducting glass. By the use of soft X-rays, the interface structure and bonding of dye molecules to mesoporous TiO2 or ZnO could be studied in detail. A combination of the two methods can be used to obtain a depth profiling of the sample.

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Bersweiler, Mathias. « From Sm1-xGdxAl2 electronic properties to magnetic tunnel junctions based on Sm1-xGdxAl2 and/or [Co/Pt] electrodes : Towards the integration of Zero Magnetization ferromagnets in spintronic devices ». Thesis, Université de Lorraine, 2014. http://www.theses.fr/2014LORR0146/document.

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Le contexte général de ce travail est le développement et l'intégration de nouveaux matériaux magnétiques ayant des propriétés originales et d'intérêt potentiel pour la spintronique. En tant que matériau ferromagnétique d’aimantation nulle, le composé Sm1-xGdxAl2 (SGA) suscite un intérêt particulier, puisqu’il est capable, dans son état magnétique compensé, de polariser en spin un courant d’électrons. Dans un premier temps, des expériences de photoémission résolues en angle et en spin sur synchrotron ont permis d’effectuer une analyse précise de la structure électronique selon diverses directions de la zone de Brillouin et d’estimer de manière directe la polarisation de spin au niveau de Fermi du composé SGA. Dans un second temps, une attention particulière a été portée aux multicouches [Co/Pt] et aux JTMs à base de [Co/Pt]. Les multicouches [Co/Pt] constituent la seconde électrode des JTMs à base de SGA. Leurs propriétés magnétiques (en particulier l'anisotropie perpendiculaire et l'aimantation à saturation) ont été soigneusement étudiées en fonction de l'épaisseur de Pt et de la nature de la couche tampon (Pt, MgO ou Al2O3), et en liaison avec leurs caractéristiques structurales. Leur intégration dans des JTMs à base de [Co/Pt] a permis ensuite de remonter d’une part à la polarisation tunnel effective des multicouches [Co/Pt] et d’autre part aux configurations magnétiques des différentes électrodes, configurations parfaitement expliquées et reproduites par des simulations micro-magnétiques. Dans un troisième temps, les résultats de magnéto-transport au sein des JTMs SGA/MgO/[Co/Pt] sont présentés et discutés
The general context of this work is the development and integration of new magnetic materials with original properties of potential interest for spintronic applications. In this field, the Sm1-xGdxAl2 (SGA) compound drives a particular attention, as a zero-magnetization ferromagnet that can exhibit a spin polarization in its magnetic compensated state. In a first step, synchrotron-based angle and spin resolved photoemission spectroscopy experiments have permitted to perform an accurate analysis of the electronic structure along various directions of the Brillouin Zone and to get a direct estimation of the spin polarization at the Fermi level. In a second step, a special attention has been the paid to [Co/Pt] multilayers and to [Co/Pt]-based MTJs. The [Co/Pt] multilayers would constitute the second electrode in SGA-based MTJs. Their magnetic properties (especially the perpendicular anisotropy and the saturation magnetization) have been carefully investigated as a function of Pt thickness and nature of the buffer layer (Pt, MgO or Al2O3), and in close connection with structural characteristics. Their integration in [Co/Pt]-based MTJs has permitted to determine the [Co/Pt] effective tunnel polarization and to unravel the magnetic configurations of both electrodes which are perfectly explained and reproduced by micromagnetic simulations. In a third step, the results concerning the magneto-transport experiments in SGA/MgO/[Co/Pt] MTJs are presented and discussed

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Torabi, Naseem M. « Materials Selection and Processing Techniques for Small Spacecraft Solar Cell Arrays ». UKnowledge, 2013. http://uknowledge.uky.edu/ece_etds/22.

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Body mounted germanium substrate solar cell arrays form the faces of many small satellite designs to provide the primary power source on orbit. High efficiency solar cells are made affordable for university satellite programs as triangular devices trimmed from wafer scale solar cells. The smaller cells allow array designs to pack tightly around antenna mounts and payload instruments, giving the board design flexibility. One objective of this work is to investigate the reliability of solar cells attached to FR-4 printed circuit boards. FR-4 circuit boards have significantly higher thermal expansion coefficients and lower thermal conductivities than germanium. This thermal expansion coefficient mismatch between the FR-4 board and the components causes concern for the power system in terms of failures seen by the solar cells. These failures are most likely to occur with a longer orbital lifetime and an extended exposure to harsh environments. This work compares various methods of attaching solar cells to printed circuit boards, using solder paste alone and with a silicone adhesive, and considering the application of these adhesives by comparing the solder joints when printed by screen versus a stencil. An environmental test plan was used to compare the survivability and performance of the solar arrays.

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Sarvari, Hojjatollah. « FABRICATION AND CHARACTERIZATION OF ORGANIC-INORGANIC HYBRID PEROVSKITE SOLAR CELLS ». UKnowledge, 2018. https://uknowledge.uky.edu/ece_etds/123.

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Solar energy as the most abundant source of energy is clean, non-pollutant, and completely renewable, which provides energy security, independence, and reliability. Organic-inorganic hybrid perovskite solar cells (PSCs) revolutionized the photovoltaics field not only by showing high efficiency of above 22% in just a few years but also by providing cheap and facile fabrication methods. In this dissertation, fabrication of PSCs in both ambient air conditions and environmentally controlled N2-filled glove-box are studied. Several characterization methods such as SEM, XRD, EDS, Profilometry, four-point probe measurement, EQE, and current-voltage measurements were employed to examine the quality of thin films and the performance of the PSCs. A few issues with the use of equipment for the fabrication of thin films are addressed, and the solutions are provided. It is suggested to fabricate PSCs in ambient air conditions entirely, to reduce the production cost. So, in this part, the preparation of the solutions, the fabrication of thin films, and the storage of materials were performed in ambient air conditions regardless of their humidity sensitivity. Thus, for the first part, the fabrication of PSCs in ambient air conditions with relative humidity above ~36% with and without moisture sensitive material, i.e., Li-TFSI are provided. Perovskite materials including MAPbI3 and mixed cation MAyFA(1-y)PbIxBr(1-x) compositions are investigated. Many solution-process parameters such as the spin-coating speed for deposition of the hole transporting layer (HTL), preparation of the HTL solution, impact of air and light on the HTL conductivity, and the effect of repetitive measurement of PSCs are investigated. The results show that the higher spin speed of PbI2 is critical for high-quality PbI2 film formation. The author also found that exposure of samples to air and light are both crucial for fabrication of solar cells with larger current density and better fill factor. The aging characteristics of the PSCs in air and vacuum environments are also investigated. Each performance parameter of air-stored samples shows a drastic change compared with that of the vacuum-stored samples, and both moisture and oxygen in air are found to influence the PSCs performances. These results are essential towards the fabrication of low-cost, high-efficiency PSCs in ambient air conditions. In the second part, the research is focused on the fabrication of high-efficiency PSCs using the glove-box. Both single-step and two-step spin-coating methods with perovskite precursors such as MAyFA(1-y)PbIxBr(1-x) and Cesium-doped mixed cation perovskite with a final formula of Cs0.07MA0.1581FA0.7719Pb1I2.49Br0.51 were considered. The effect of several materials and process parameters on the performance of PSCs are investigated. A new solution which consists of titanium dioxide (TiO2), hydrochloric acid (HCl), and anhydrous ethanol is introduced and optimized for fabrication of quick, pinhole-free, and efficient hole-blocking layer using the spin-coating method. Highly reproducible PSCs with an average power conversion efficiency (PCE) of 15.4% are fabricated using this solution by spin-coating method compared to the conventional solution utilizing both spin-coating with an average PCE of 10.6% and spray pyrolysis with an average PCE of 13.78%. Moreover, a thin layer of silver is introduced as an interlayer between the HTL and the back contact. Interestingly, it improved the current density and, finally the PCEs of devices by improving the adhesion of the back electrode onto the organic HTL and increasing the light reflection in the PSC. Finally, a highly reproducible fabrication procedure for cesium-doped PSCs using the anti-solvent method with an average PCE of 16.5%, and a maximum PCE of ~17.5% is provided.

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Muduli, Pranaba Kishor. « Ferromagnetic thin films of Fe and Fe 3 Si on low-symmetric GaAs(113)A substrates ». Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15473.

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In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann.
In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.

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Amami, Paul Erhire. « Structure and spin dynamics in Cr Doped ZnO ». Diss., 2016. http://hdl.handle.net/10500/22833.

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Polycrystalline Zn1-xCrxO (0.01 ≤ x ≤ 0.09) samples synthesized by solid state reaction technique were sintered at different temperatures following slow step sintering schedule. Structural, micro-structural, optical, magnetic properties and homogeneity were investigated using suitable characterisation techniques. Cr2O3 and CrO2 phases have been detected in the XRD patterns and Raman spectra of Zn1-xCrxO samples with x ≥ 0.05. Photoluminescence study has indicated improved optical property of the samples compared to undoped ZnO. While low percentage Cr doped samples showed diamagnetic behaviour, higher percentage doped samples (≥ 5%) exhibited ferromagnetic, paramagnetic and anti-ferromagnetic behaviours depending upon the sintering temperatures. The magnetic properties have been analysed through Electron Spin Resonance study. A g-value of 1.97 indicates Cr in +3 valence state in doped ZnO system. Presence of Cr3+ and Cr4+ in ZnO is understood to facilitate super exchange interactions to promote ferromagnetism at room temperature. ESR study shows improved magnetic homogeneity achieved by slow step sintering process.
Physics
M. Sc. (Physics)

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張世鵬. « Spin filtering in 2D double barrier semiconductor structures ». Thesis, 2007. http://ndltd.ncl.edu.tw/handle/98000880910739409119.

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碩士
國立交通大學
電子工程系所
95
In this report, we propose a device made of GaAs/InAs/GaAs, and by the double gates there is a potential barrier induced on the channel. In the presence of spin orbit interaction, there is an energy difference between the opposite spin orientation electrons. That is the main reason why there is spin polarization. We could get a respectable value of spin polarization based on this structure. In advance, we can almost filter the electrons with opposite spin orientations whenever we could control the doping concentration and the distance between the double gate electrodes appropriately. Our calculation is based on the effective one-hand Halmiltonian and Rashba spin orbit interaction, and the envelope function is used to describe the electron wave function on the channel. In the numerical calculation of the tunneling transmission probability we adopt the multistep approximation to approximate the whole potential barrier. Besides, we also present the relations between spin polarization and the factors which could affect it. The I-V curve in such a device is also presented, and we will explain how the current varies at every bias point.

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Slobodskyy, Anatoliy. « Diluted magnetic semiconductor Resonant Tunneling Structures for spin manipulation ». Doctoral thesis, 2005. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-18263.

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In this work we investigate magnetic resonant tunneling diode (RTD) structures for spin manipulation. All-II-VI semiconductor RTD structures based on [Zn,Be]Se are grown by molecular beam epitaxy. We observe a strong, magnetic field induced, splitting of the resonance peaks in the I-V characteristics of RTDs with [Zn,Mn]Se diluted magnetic semiconductors (DMS) quantum well. The splitting saturates at high fields and has strong temperature dependence. A phonon replica of the resonance is also observed and has similar behaviour to the peak. We develop a model based on the giant Zeeman splitting of the spin levels in the DMS quantum well in order to explain the magnetic field induced behaviour of the resonance
In dieser Arbeit werden magnetische resonante Tunneldioden (RTD) hinsichtlich ihrer Eignung zur Spin-Manipulation untersucht. [Zn, Be]Se basierende II-VI RTD-Strukturen wurden mittels Molekularstrahlepitaxie gewachsen. Man beobachtet eine starke, vom Magnetfeld induzierte Aufspaltung der Resonanz in der U-I Kennlinie derjenigen RTDs, die über einen Quantentrog aus [Zn, Mn]Se verdünnt magnetischen Halbleiter (DMS) verfügen. Diese Aufspaltung hat eine starke Temperaturabhängigkeit und erreicht bei hohen Feldern eine Sättigung. Eine Phononen-Replika der Resonanz wird ebenfalls beobachtet und hat ähnliche Eigenschaften wie die Resonanz selbst. Es wird ein Modell entwickelt, welches auf der Giant-Zeeman-Aufspaltung der Spin-Aufgespalteten Niveaus des DMS-Quantentrogs basiert, um das magnetfeldabhängige Verhalten der Resonanz zu erklären

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GUO, JUN-YI, et 郭峻藝. « On local pseudopotential method to investigate the effects of the electronic Spin-orbit Splitting influence in band structure for semiconductors ». Thesis, 1991. http://ndltd.ncl.edu.tw/handle/15247210081547159316.

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Slobodskyy, Anatoliy [Verfasser]. « Diluted magnetic semiconductor resonant tunneling structures for spin manipulation / submitted by Anatoliy Slobodskyy ». 2006. http://d-nb.info/981755941/34.

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Thèses sur le sujet « Electronic Spin - Semiconductor Structures »

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