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Auteur : Grafiati
Publié le 7 septembre 2023

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1

Xu, Hui, Yi-pu Song et Xin-mei Li. « Conduction mechanism studies on electron transfer of disordered system ». Journal of Central South University of Technology 9, no 2 (juin 2002) : 134–37. http://dx.doi.org/10.1007/s11771-002-0058-3.

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2

Efros, A. L., et B. I. Shklovskii. « Influence of electron-electron interaction on hopping conduction of disordered systems ». Journal of Non-Crystalline Solids 97-98 (décembre 1987) : 31–38. http://dx.doi.org/10.1016/0022-3093(87)90010-x.

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3

Maiti, Santanu K. « Quantum Transport in Bridge Systems ». Solid State Phenomena 155 (mai 2009) : 71–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.155.71.

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We study electron transport properties of some molecular wires and a unconventional disordered thin film within the tight-binding framework using Green's function technique. We show that electron transport is significantly affected by quantum interference of electronic wave functions, molecule-to-electrode coupling strengths, length of the molecular wire and disorder strength. Our model calculations provide a physical insight to the behavior of electron conduction across a bridge system.
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4

HWANG, J. R., M. F. TAI, H. C. KU, W. N. WANG et K. H. LII. « TRANSPORT PROPERTIES OF THE RARE EARTH DISORDERED SYSTEMS (R1−xYbx)Ba2Cu3O7 (R = Y, Sm) ». International Journal of Modern Physics B 02, no 06 (décembre 1988) : 1395–98. http://dx.doi.org/10.1142/s0217979288001219.

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Electrical and magnetic measurements have been carried out for the rare earth disordered superconducting copper oxide systems ( Y 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth mass difference) and ( Sm 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth ionic size difference). Effect of compositional variation upon room temperature electrical resistivity shows no disorder scattering contribution from the randomly distributed rare earth ions located on the (1/2, 1/2, 1/2) site of the space group Pmmm. This result indicates very low conduction electron density of states surrounding rare earth ions. On the contrary, negative deviation of electrical resistivity from the linear Vegard law was observed. This reduced conduction electron scattering was discussed through the variation of packing density, grain size and/or twin structure.
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5

Rezania, Hamed. « Electronic properties of disordered zigzag carbon nanotubes ». International Journal of Modern Physics B 29, no 05 (20 février 2015) : 1550020. http://dx.doi.org/10.1142/s0217979215500204.

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We study the density of states of zigzag carbon nanotube (CNT) doped with both Boron and nitrogen atoms as donor and acceptor impurities, respectively. The effect of scattering of the electrons on the electronic spectrum of the system can be obtained via adding random on-site energy term to the tight binding model Hamiltonian which describes the clean system. Green's function approach has been implemented to find the behavior of electronic density. Due to Boron (Nitrogen) doping, Fermi surface tends to the valence (conduction) band of semiconductor CNT so that the energy gap width reduces. Furthermore the density of states of disordered metallic zigzag CNTs includes a peak near the Fermi energy.
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6

Hoon Lee, Chang, Dong Keun Oh et Cheol Eui Lee. « Electron Paramagnetic Resonance Observation of Critical Behaviors in a Disordered Conducting Polymer System ». Journal of the Physical Society of Japan 72, no 7 (15 juillet 2003) : 1812–13. http://dx.doi.org/10.1143/jpsj.72.1812.

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7

Bergmann, Gerd. « WEAK LOCALIZATION AND ITS APPLICATIONS AS AN EXPERIMENTAL TOOL ». International Journal of Modern Physics B 24, no 12n13 (20 mai 2010) : 2015–52. http://dx.doi.org/10.1142/s021797921006468x.

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The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called weak localization. The theoretical origin of weak localization is the Langer–Neal graph in Kubo formalism. It represents an interference experiment with conduction electrons split into pairs of waves interfering in the back-scattering direction. The intensity of the interference (integrated over the time) can easily be measured by the resistance of the film. The application of a magnetic field B destroys the phase coherence after a time which is proportional to 1/B. For a field of 1 T this time is of the order of 1 ps. Therefore with a dc experiment, one can measure characteristic times of the electron system in the range of picoseconds. Weak localization has been applied to measure dephasing, spin-orbit scattering, tunneling times, etc. One important field of application is the investigation of magnetic systems and magnetic impurities by measuring the magnetic dephasing time and its temperature dependence. Here the Kondo maximum of spin-flip scattering, spin-fluctuations, Fermi liquid behavior and magnetic d-resonances have been investigated. Another field is the detection of magnetic moments for very dilute alloys and surface impurities. This article given a brief survey of different applications of weak localization with a focus on magnetic impurities.
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8

RAVOT, D., O. GOROCHOV et A. MAUGER. « METAL-INSULATOR TRANSITION IN Yb1–x Gdx Te ». International Journal of Modern Physics B 07, no 01n03 (janvier 1993) : 814–17. http://dx.doi.org/10.1142/s0217979293001724.

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The metal-insulator transition of Yb1−xGdxTe has been studied by tuning x, since Gd3+ions act as donors. Transport and magnetic properties have been measured for 0<x<1 and T≥4.2K. For x>0.5, the material is a metallic antiferromagnet with a Néel temperature decreasing with x. An outstanding T–1 behavior of the resistivity is observed in a broad temperature range, which we attribute to electron-electron scattering in 3D dimension disordered systems. This behavior is observed in the metallic side, for x in the range 0.2<x≤0.5, and it can be regarded as a pretransition effect to the weak localization regime. This feature gives evidence that localization occurs because random fluctuations are enhanced by the magnetic interaction of the conduction electrons with Gd3+ ions favoring the formation of magnetic polarons. Only for x=0.2 can we observe an activated regime of the resistivity curve with a small activation energy ( ≈ 60K) typical of a thermal activation of the carriers above a mobility edge.
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9

Lau, Lik Nguong, Kean Pah Lim, Amirah Natasha Ishak, Mohd Mustafa Awang Kechik, Soo Kien Chen, Noor Baa’yah Ibrahim, Muralidhar Miryala, Masato Murakami et Abdul Halim Shaari. « The Physical Properties of Submicron and Nano-Grained La0.7Sr0.3MnO3 and Nd0.7Sr0.3MnO3 Synthesised by Sol–Gel and Solid-State Reaction Methods ». Coatings 11, no 3 (22 mars 2021) : 361. http://dx.doi.org/10.3390/coatings11030361.

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La0.7Sr0.3MnO3 (LSMO) and Nd0.7Sr0.3MnO3 (NSMO) possess excellent colossal magnetoresistance (CMR). However, research work on the neodymium-based system is limited to date. A comparative study between LSMO and NSMO prepared by sol–gel and solid-state reaction methods was undertaken to assess their structural, microstructural, magnetic, electrical, and magneto-transport properties. X-ray diffraction and structure refinement showed the formation of a single-phase composition. Sol–gel-synthesised NSMO was revealed to be a sample with single crystallite grains and exhibited intriguing magnetic and electrical transport behaviours. Magnetic characterisation highlighted that Curie temperature (TC) decreases with the grain size. Strong suppression of the metal–insulator transition temperature (TMI) was observed and attributed to the magnetically disordered grain surface and distortion of the MnO6 octahedra. The electrical resistivity in the metallic region was fitted with theoretical models, and the conduction mechanism could be explained by the grain/domain boundary, electron–electron, and electron–magnon scattering process. The increase in the scattering process was ascribed to the morphology changes. Enhancement of low-field magnetoresistance (LFMR) was observed in nano-grained samples. The obtained results show that the grain size and its distribution, as well as the crystallite formation, strongly affect the physical properties of hole-doped manganites.
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10

Luo, Yongkang, F. Ronning, N. Wakeham, Xin Lu, Tuson Park, Z. A. Xu et J. D. Thompson. « Pressure-tuned quantum criticality in the antiferromagnetic Kondo semimetal CeNi2−δAs2 ». Proceedings of the National Academy of Sciences 112, no 44 (19 octobre 2015) : 13520–24. http://dx.doi.org/10.1073/pnas.1509581112.

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The easily tuned balance among competing interactions in Kondo-lattice metals allows access to a zero-temperature, continuous transition between magnetically ordered and disordered phases, a quantum-critical point (QCP). Indeed, these highly correlated electron materials are prototypes for discovering and exploring quantum-critical states. Theoretical models proposed to account for the strange thermodynamic and electrical transport properties that emerge around the QCP of a Kondo lattice assume the presence of an indefinitely large number of itinerant charge carriers. Here, we report a systematic transport and thermodynamic investigation of the Kondo-lattice system CeNi2−δAs2 (δ ≈ 0.28) as its antiferromagnetic order is tuned by pressure and magnetic field to zero-temperature boundaries. These experiments show that the very small but finite carrier density of ∼0.032 e−/formular unit in CeNi2−δAs2 leads to unexpected transport signatures of quantum criticality and the delayed development of a fully coherent Kondo-lattice state with decreasing temperature. The small carrier density and associated semimetallicity of this Kondo-lattice material favor an unconventional, local-moment type of quantum criticality and raises the specter of the Nozières exhaustion idea that an insufficient number of conduction-electron spins to separately screen local moments requires collective Kondo screening.
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11

Cui, Hengbo, Hamish H. M. Yeung, Yoshitaka Kawasugi, Takaaki Minamidate, Lucy K. Saunders et Reizo Kato. « High-Pressure Crystal Structure and Unusual Magnetoresistance of a Single-Component Molecular Conductor [Pd(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) ». Crystals 11, no 5 (11 mai 2021) : 534. http://dx.doi.org/10.3390/cryst11050534.

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A single-component molecular crystal [Pd(dddt)2] has been shown to exhibit almost temperature-independent resistivity under high pressure, leading theoretical studies to propose it as a three-dimensional (3D) Dirac electron system. To obtain more experimental information about the high-pressure electronic states, detailed resistivity measurements were performed, which show temperature-independent behavior at 13 GPa and then an upturn in the low temperature region at higher pressures. High-pressure single-crystal structure analysis was also performed for the first time, revealing the presence of pressure-induced structural disorder, which is possibly related to the changes in resistivity in the higher-pressure region. Calculations based on the disordered structure reveal that the Dirac cone state and semiconducting state coexist, indicating that the electronic state at high pressure is not a simple Dirac electron system as previously believed. Finally, the first measurements of magnetoresistance on [Pd(dddt)2] under high pressure are reported, revealing unusual behavior that seems to originate from the Dirac electron state.
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12

Ильющенков, Д. С., В. М. Кожевин et С. А. Гуревич. « Зарядовое состояние металлических наночастиц на проводящей подложке ». Физика твердого тела 61, no 10 (2019) : 1731. http://dx.doi.org/10.21883/ftt.2019.10.48241.471.

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The work is devoted to the analysis of charge state of a disordered system of metallic nanoparticles positioned on a conductive substrate. A theoretical model has been developed that describes thermally activated electron tunnel transitions between the particles as well as between the particles and the substrate, the last ones being caused by the difference in particle and substrate work functions. The model accounts for the inter-particle charge interactions and for the interaction of the particle charges with the image charges in the substrate. By using Monte Carlo simulations charge distributions in the structures with different nanoparticle densities in a single-layer coating on a substrate were obtained as functions of the dielectric constant of the environment and work function of the particles and the substrate. As an example, results are presented for the structures with Ni and Pt nanoparticles on a carbon substrate, which are often used as catalysts of chemical processes.
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13

Spisak, B. J., M. Wołoszyn et D. Szydłowski. « Dynamical localisation of conduction electrons in one-dimensional disordered systems ». Journal of Computational Electronics 14, no 4 (28 juillet 2015) : 916–21. http://dx.doi.org/10.1007/s10825-015-0733-x.

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14

Chiu, Hui-Shan, Ping-I. Lin, Hsing-Chen Wu, Wen-Hsing Hsieh, Chii-Dong Chen et Yit-Tsong Chen. « Electron hopping conduction in highly disordered carbon coils ». Carbon 47, no 7 (juin 2009) : 1761–69. http://dx.doi.org/10.1016/j.carbon.2009.03.002.

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15

Yoon, Minho. « Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors ». Micromachines 14, no 8 (13 août 2023) : 1596. http://dx.doi.org/10.3390/mi14081596.

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This study presents the disorderedness effects on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). Bottom-gate ZnO TFTs show n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, degradable subthreshold swing. The charge-transport characteristics of the disordered semiconductor TFTs are severely affected by the localized trap states. Thus, we posit that the disorderedness factors, which are the interface trap capacitance and the diffusion coefficient of electrons, would result in the degradation. Considering the factors as gate-dependent power laws, we derive the subthreshold current–voltage relationship for disordered semiconductors. Notably, the gate-dependent disorderedness parameters are successfully deduced and consistent with those obtained by the gm/Ids method, which was for the FinFETs. In addition, temperature-dependent current–voltage analyses reveal that the gate-dependent interface traps limit the subthreshold conduction, leading to the diffusion current. Thus, we conclude that the disorderedness factors of the ZnO films lead to the indefinable subthreshold swing of the ZnO TFTs.
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16

Giordano, N. « WEAK LOCALIZATION AND ELECTRON–ELECTRON INTERACTION EFFECTS IN THIN METAL WIRES AND FILMS ». International Journal of Modern Physics B 24, no 12n13 (20 mai 2010) : 2053–71. http://dx.doi.org/10.1142/s0217979210064691.

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A brief and selective review of experimental studies of electrical conduction in thin metal wires and films at low temperatures is given. This review will illustrate the importance of various length scales and of dimensionality in determining the properties disordered metals. A few intriguing and still unresolved experimental findings are also mentioned.
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17

Turchinovich, Dmitry, Zoltan Mics, Søren A. Jensen, Klaas-Jan Tielrooij, Ivan Ivanov, Khaled Parvez, Akimitsu Narita et al. « Ultrafast carrier dynamics in graphene and graphene nanostructures ». Terahertz Science and Technology 13, no 4 (décembre 2020) : 135–48. http://dx.doi.org/10.1051/tst/2020134135.

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In this paper we provide a comprehensive view on the ultrafast conduction dynamics in graphene and graphene nanostructures. We show that ultrafast conduction in graphene can be well understood within a simple thermodynamic picture, by taking into account the dynamical interplay between electron heating and cooling, with the driving electric field acting as a supplier of thermal energy to graphene electron population. At the same time, the conductive properties of graphene nanostructures, such as graphene nanoribbons (GNRs) and carbon nanotubes (CNTs), can be well explained within the concept typical for disordered materials, such as e.g. organic semiconductors - the conduction by the free charge experiencing long-range localization.
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18

Yamada, Hiroaki, et Kazumoto Iguchi. « Some Effective Tight-Binding Models for Electrons in DNA Conduction : A Review ». Advances in Condensed Matter Physics 2010 (2010) : 1–28. http://dx.doi.org/10.1155/2010/380710.

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Quantum transport for DNA conduction has been widely studied with interest in application as a candidate in making nanowires as well as interest in the scientific mechanism. In this paper, we review recent works concerning the electronic states and the conduction/transfer in DNA polymers. We have mainly investigated the energy-band structure and the correlation effects of localization property in the two- and three-chain systems (ladder model) with long-range correlation as a simple model for electronic property in a double strand of DNA by using the tight-bindingmodel. In addition, we investigated the localization properties of electronic states in several actual DNA sequences such as bacteriophages of Escherichia coli, human-chromosome 22, compared with those of the artificial disordered sequences with correlation. The charge-transfer properties for poly(dA)-poly(dT) and poly(dG)-poly(dC) DNA polymers are also presented in terms of localization lengths within the frameworks of the polaron models due to the coupling between the charge carriers and the lattice vibrations of the double strand of DNA.
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19

Varriale, M. C., et A. Theumann. « Disordered electron system with long-range correlated impurities ». Journal of Physics A : Mathematical and General 23, no 14 (21 juillet 1990) : L719S—L725S. http://dx.doi.org/10.1088/0305-4470/23/14/006.

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20

Katsumata, K., S. Kawai et J. Tuchendler. « ELECTRON SPIN RESONANCE IN THE DISORDERED SYSTEM Mg1-xCoxCl2 ». Le Journal de Physique Colloques 49, no C8 (décembre 1988) : C8–1091—C8–1092. http://dx.doi.org/10.1051/jphyscol:19888500.

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21

Magalhães, S. G., et Alba Theumann. « Magnetoconductivity of a disordered electron system withNorbitals per site ». Physical Review B 49, no 8 (15 février 1994) : 5691–94. http://dx.doi.org/10.1103/physrevb.49.5691.

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22

FLÖSER, MARTINA, SERGE FLORENS et THIERRY CHAMPEL. « TRANSPORT VIA CLASSICAL PERCOLATION AT QUANTUM HALL PLATEAU TRANSITIONS ». International Journal of Modern Physics : Conference Series 11 (janvier 2012) : 49–59. http://dx.doi.org/10.1142/s2010194512006150.

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We consider transport properties of disordered two-dimensional electron gases under high perpendicular magnetic field, focusing in particular on the peak longitudinal conductivity [Formula: see text] at the quantum Hall plateau transition. We use a local conductivity model, valid at temperatures high enough such that quantum tunneling is suppressed, taking into account the random drift motion of the electrons in the disordered potential landscape and inelastic processes provided by electron-phonon scattering. A diagrammatic solution of this problem is proposed, which leads to a rich interplay of conduction mechanisms, where classical percolation effects play a prominent role. The scaling function for [Formula: see text] is derived in the high temperature limit, which can be used to extract universal critical exponents of classical percolation from experimental data.
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23

Repetsky, Stanislav P., Iryna G. Vyshyvana, Sergei P. Kruchinin et Stefano Bellucci. « Theory of Electron Correlation in Disordered Crystals ». Materials 15, no 3 (19 janvier 2022) : 739. http://dx.doi.org/10.3390/ma15030739.

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This paper presents a new method of describing the electronic spectrum and electrical conductivity of disordered crystals based on the Hamiltonian of electrons and phonons. Electronic states of a system are described by the tight-binding model. Expressions for Green’s functions and electrical conductivity are derived using the diagram method. Equations are obtained for the vertex parts of the mass operators of the electron–electron and electron–phonon interactions. A system of exact equations is obtained for the spectrum of elementary excitations in a crystal. This makes it possible to perform numerical calculations of the energy spectrum and to predict the properties of the system with a predetermined accuracy. In contrast to other approaches, in which electron correlations are taken into account only in the limiting cases of an infinitely large and infinitesimal electron density, in this method, electron correlations are described in the general case of an arbitrary density. The cluster expansion is obtained for the density of states and electrical conductivity of disordered systems. We show that the contribution of the electron scattering processes to clusters is decreasing, along with increasing the number of sites in the cluster, which depends on a small parameter.
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24

Rossiter, PL. « Conduction Electron Scattering in Alloys ». Australian Journal of Physics 39, no 4 (1986) : 529. http://dx.doi.org/10.1071/ph860529.

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The aim of this review is to present a simple physical picture which shows how the electrical resistivity of a system depends upon the spatial extent and lifetime of the scattering disturbance measured in relation to the conduction electron mean free path and relaxation time. The contribution from spin fluctuations associated with isolated magnetic impurities is discussed on the basis of this model and it is shown that at temperatures below the characteristic spin fluctuation temperature the impurity acts as though it were nonmagnetic. Some results are given for both 'Kondo' (Anderson) and exchange enhanced (Wolfi) systems. Spin glasses are also discussed and the resistivity behaviour is shown to result from a competition between the RKKY interaction and spin fluctuation effects. Ordered magnetic clusters are shown to be static for periods comparable with the conduction electron relaxation time, so that there is no resistivity anomaly expected at the superparamagnetic blocking temperature. The observed temperature dependence of the resistivity then follows simply from the change in magnetic correlations within the cluster.
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25

Watanabe, Hirofumi, Tohru Kawarabayashi et Yoshiyuki Ono. « Electron Diffusion in a Two-Dimensional Disordered Symplectic System with Electron–Phonon Interactions ». Journal of the Physical Society of Japan 74, no 4 (avril 2005) : 1240–44. http://dx.doi.org/10.1143/jpsj.74.1240.

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26

Chen, Xian Lan, Zi Yue Zhang, Ju Cheng Zhang, Wei Liu, Na Wu, Shao Ping Feng, Wen Chang Chen et La Shi Yang. « Photosensitization of Colloidal ZnO Semiconductor System with Hypocrellin A ». Advanced Materials Research 528 (juin 2012) : 168–71. http://dx.doi.org/10.4028/www.scientific.net/amr.528.168.

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UV-visible spectroscopy and fluorescence quenching measurements have been employed to study electron transfer from excited Hypocrellin A (HA) into the conduction band of a colloidal ZnO semiconductor. The adsorption of HA on the surface of ZnO colloidal particles and the electron transfer process from its singlet excited state to the conduction band of colloidal ZnO semiconductor were examined under experimental conditions. Exciting HA with visible light could induce electron transfer from its singlet excited state into conduction band of colloidal ZnO semiconductor. Adsorption of HA onto the surface of colloidal ZnO semiconductor extended its absorption spectrum further into the visible region, the quenching behavior were observed as the colloidal ZnO semiconductor was added and determined by fluorescence quenching method.
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27

Rauh, Alexander. « Analytical Localization Lengths in an One-Dimensional Disordered Electron System ». Zeitschrift für Naturforschung A 64, no 3-4 (1 avril 2009) : 205–21. http://dx.doi.org/10.1515/zna-2009-3-407.

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Abstract Analytical approximations of the Lyapunov exponent are derived for a random displacement model with equal potential barriers and random positions of the scatterers. Two asymptotic regions are considered corresponding to high and low reflectivity of the single scattering potential. The analytical results are in terms of a distribution function W for certain phases of the transfer matrices. A functional equation for W is derived and numerically solved. This serves to validate the analytical asymptotic formulas which turn out to be accurate in the high and low reflectivity regions with dimensionless wave number K < 2 and K > 6, respectively. The high wave number asymptotics allows for an analytical examination of the sufficient conditions for Anderson localization
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28

Nakaema, Marcelo K. K., et Rosemary Sanches. « Electron transfer in a disordered polymeric system : fluorescence spectroscopy study ». Chemical Physics Letters 307, no 5-6 (juillet 1999) : 367–72. http://dx.doi.org/10.1016/s0009-2614(99)00527-8.

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29

Yong-Hong, Yang, Wang Yong-Gang et Liu Mei. « Hall Conductivity in a Quasi-Two-Dimensional Disordered Electron System ». Communications in Theoretical Physics 37, no 4 (15 avril 2002) : 495–98. http://dx.doi.org/10.1088/0253-6102/37/4/495.

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30

Yang, G. C. S. « Electron localisation with the Coulomb effect in a disordered system ». Journal of Physics C : Solid State Physics 20, no 16 (10 juin 1987) : L335—L339. http://dx.doi.org/10.1088/0022-3719/20/16/003.

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31

TURIK, A. V., G. S. RADCHENKO, A. I. CHERNOBABOV et A. G. KHASABOV. « Disordered Ferroelectric Systems : Giant Dielectric Enhancement, Maxwell-Wagner Relaxations and Conductor–Insulator Transition ». Ferroelectrics 307, no 1 (janvier 2004) : 171–76. http://dx.doi.org/10.1080/00150190490492925.

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32

Landacanovas, AR, et LC Oterodiaz. « A Transmission Electron Microscopy Study of the MnS-Er2S3 System ». Australian Journal of Chemistry 45, no 9 (1992) : 1473. http://dx.doi.org/10.1071/ch9921473.

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A systematic search mainly by means of electron diffraction and microscopy techniques was performed to elucidate the structural behaviour of the Mn-Er-S ternary system at 1373-1773 K. At 1773 K a new phase MnEr2S4 with spinel structure, a = 11.97(2) � , was found. It transforms, due to electron beam damage (400 kV), into rock-salt (α-MnS ) domains and slabs of defects formed by some unit cells of MnEr2S4 (CaTi2O4 type) and MnEr4S7 (Y5S7 type) structures. The composition range between MnEr4S7 (S/M = 1.333) and MnEr4S7 (S/M = 1.400) is covered quasi-continuously by ordered and disordered intergrowth of both phases. Two ordered phases with composition Mn3Er8S15 (S/M = 1.3636) and Mn2Er6Sll (S/M = 1.375) have been found; however, disordered crystals due to a non-uniform mixing of those structures are more commonly observed. Furthermore, a new phase with a layer structure, reminiscent of LaCrS3 type, has been found mainly at 1373 K.
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33

El Kharbachi, Abdelouahab, Julia Wind, Amund Ruud, Astrid B. Høgset, Magnus M. Nygård, Junxian Zhang, Magnus H. Sørby et al. « Pseudo-ternary LiBH4·LiCl·P2S5 system as structurally disordered bulk electrolyte for all-solid-state lithium batteries ». Physical Chemistry Chemical Physics 22, no 25 (2020) : 13872–79. http://dx.doi.org/10.1039/d0cp01334j.

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LiCl1−x(BH4)x stabilized by P2S5 addition with high Li+ conduction; further operando XRD in transmission mode of a solid-state battery demonstrated.
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34

GODA, MASAKI, MARK YA AZBEL et HIROAKI YAMADA. « NON-EXPONENTIALLY LOCALIZED STATES IN A TWO-DIMENSIONAL DISORDERED SYSTEM ? » International Journal of Modern Physics B 13, no 21n22 (10 septembre 1999) : 2705–25. http://dx.doi.org/10.1142/s0217979299002605.

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We study the length L dependence of the forward component of the transfer matrix for an electron passing through a strip with δ-function impurity potentials, with particular attention to the slowest growth-rate characteristic. In the first step of our microscopic study we obtain the inverse localization length for low energy electron in a weakly perturbed system. We show by considering an ensemble averaged mixed tensor a critical energy dividing exponential localization and non-exponential localization in the two-dimensional disordered system.
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35

YANG, Y. H. « MAGNETIC SCATTERING EFFECTS IN A QUASI-TWO-DIMENSIONAL DISORDERED ELECTRON SYSTEM ». Modern Physics Letters B 14, no 27n28 (10 décembre 2000) : 995–1000. http://dx.doi.org/10.1142/s0217984900001257.

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The weak-localization correction to the conductivity for a quasi-two-dimensional disordered electron system is calculated in the presence of magnetic impurity scatterings. The analytical result is obtained as a function of the magnetic scattering time, and the interesting magnetic-scattering-dependent crossover behavior from 3D to 2D is discussed.
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36

Mareš, J. J., J. Krištofik, P. Hubík, X. Feng, J. Novák et S. Hasenöhrl. « Highly disordered two-dimensional electron system in a weak magnetic field ». Europhysics Letters (EPL) 45, no 3 (1 février 1999) : 374–80. http://dx.doi.org/10.1209/epl/i1999-00174-3.

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37

Felderhof, B. U., et A. Kauerauf. « Electron spectral density in a disordered system of hard sphere scatterers ». Physica A : Statistical Mechanics and its Applications 220, no 3-4 (novembre 1995) : 376–89. http://dx.doi.org/10.1016/0378-4371(95)00218-v.

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38

Slavin, V. « Low-temperature thermodynamic properties of one-dimensional disordered electron lattice system ». physica status solidi (b) 241, no 13 (novembre 2004) : 2928–37. http://dx.doi.org/10.1002/pssb.200402069.

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39

NEILSON, DAVID. « DISSIPATIVE PROCESSES IN LOW DENSITY STRONGLY INTERACTING 2D ELECTRON SYSTEMS ». International Journal of Modern Physics B 24, no 25n26 (20 octobre 2010) : 4946–60. http://dx.doi.org/10.1142/s0217979210057122.

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A glassy phase in disordered two dimensional (2D) electron systems may exist at low temperatures for electron densities lying intermediate between the Fermi liquid and Wigner crystal limits. The glassy phase is generated by the combined effects of disorder and the strong electron-electron correlations arising from the repulsive Coulomb interactions. Our approach here is motivated by the observation that at low electron densities the electron pair correlation function, as numerically determined for a non-disordered 2D system from Monte Carlo simulations, is very similar to the pair correlation function for a 2D classical system of hard discs. This suggests that theoretical approaches to 2D classical systems of hard discs may be of use in studying the disordered, low density electron problem. We use this picture to study its dynamics on the electron-liquid side of a glass transition. At long times the major relaxation process in the electron-liquid will be a rearrangement of increasingly large groups of the discs, rather than the movement of the discs separately. Such systems have been studied numerically and they display all the characteristics of glassy behaviour. There is a slowing down of the dynamics and a limiting value of the retarded spatial correlations. Motivated by the success of mode-coupling theories for hard spheres and discs in reproducing experimental results in classical fluids, we use the Mori formalism within a mode-coupling theory to obtain semi-quantitative insight into the role of electron correlations as they affect the time response of the weakly disordered 2D electron system at low densities.
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40

Repetsky, S., I. Vyshyvana, S. Kruchinin et S. Bellucci. « Tight-binding model in the theory of disordered crystals ». Modern Physics Letters B 34, no 19n20 (8 juillet 2020) : 2040065. http://dx.doi.org/10.1142/s0217984920400655.

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This paper presents a new method of describing electronic spectrum, thermodynamic potential, and electrical conductivity of disordered crystals based on the Hamiltonian of multi-electron system and diagram method for Green’s functions finding. Electronic states of a system were described by multi-band tight-binding model. The Hamiltonian of a system is defined on the basis of the wave functions of electron in the atom nucleus field. Electrons scattering on the oscillations of the crystal lattice are taken into account. The proposed method includes long-range Coulomb interaction of electrons at different sites of the lattice. Precise expressions for Green’s functions, thermodynamic potential and conductivity tensor are derived using diagram method. Cluster expansion is obtained for density of states, free energy, and electrical conductivity of disordered systems. We show that contribution of the electron scattering processes to clusters is decreasing along with increasing number of sites in the cluster, which depends on small parameter. The computation accuracy is determined by renormalization precision of the vertex parts of the mass operators of electron-electron and electron-phonon interactions. This accuracy also can be determined by small parameter of cluster expansion for Green’s functions of electrons and phonons.
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41

Kruchinin, Sergei P., Roberts I. Eglitis, Vitaliy P. Babak, Iryna G. Vyshyvana et Stanislav P. Repetsky. « Effects of Electron Correlation inside Disordered Crystals ». Crystals 12, no 2 (9 février 2022) : 237. http://dx.doi.org/10.3390/cryst12020237.

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We propose a novel approach for characterising the electron spectrum of disordered crystals constructed from a Hamiltonian of electrons as well as phonons and a diagram approach for Green’s function. The system’s electronic states were modelled by means of the multi-band, tight-binding approach. The system’s Hamiltonian is described based on the electron wave functions at the field of the atom nucleus. Our novel approach incorporates the long-range Coulomb interplay of electrons located in different lattice positions. Explicit interpretations of Green’s functions are derived using a diagram method. Equations are obtained for the vertex components for the mass operators of the electron–electron as well aselectron–phonon interplays. A system of equations for the spectrum of elementary excitations in the crystal is obtained, in which the vertex components for the mass operators of electron–electron as well as electron–phonon interplays are renormalised. Thismakes it possible to perform numerical computationsfor the system’s energy spectrum with a predetermined accuracy. In contrast to other approaches in which electron correlations are only taken into account in the limiting cases of an infinitely large and infinitesimal electron density, in this method, electron correlations are described in the general case of an arbitrary density. We obtained the cluster expansion of the density of states (DOS) of the disordered systems. We demonstrate that the addition of the electron-scattering mechanismsto the clusters is decreasing. This happens due to a growing number of positions in the cluster, which hang ontothe small parameter. The computing exactness is fixed by a small parameter for cluster expansion of Green’s functions of electrons as well as phonons.
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42

Loktev, V. M., S. G. Sharapov et H. Beck. « Spectral function and character of the motion of a conduction electron in an orientationally disordered molecular cryocrystal ». Low Temperature Physics 28, no 3 (mars 2002) : 220–26. http://dx.doi.org/10.1063/1.1468528.

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43

Prasad, B. L. V., et T. P. Radhakrishnan. « Potassium-graphite-tetracyanoethylene ternary intercalation compounds — modified conduction electron spin system ». Synthetic Metals 81, no 1 (juillet 1996) : 9–13. http://dx.doi.org/10.1016/0379-6779(96)80223-2.

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44

Yang, Y. H. « Spin-orbit scattering effects in a quasi-two-dimensional disordered electron system ». Physica B : Condensed Matter 305, no 2 (novembre 2001) : 143–46. http://dx.doi.org/10.1016/s0921-4526(01)00608-1.

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45

Slavin, V. V. « Low-temperature thermodynamic properties of a one-dimensional disordered electron lattice system ». Solid State Communications 131, no 6 (août 2004) : 355–58. http://dx.doi.org/10.1016/j.ssc.2004.06.001.

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Yang, Y. H. « Spin-dependent scattering effects in a quasi-two-dimensional disordered electron system ». Solid State Communications 118, no 4 (avril 2001) : 199–202. http://dx.doi.org/10.1016/s0038-1098(01)00048-5.

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47

Zhao, Ying, et Jiawei Wang. « Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device ». Micromachines 13, no 5 (29 avril 2022) : 707. http://dx.doi.org/10.3390/mi13050707.

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We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelectric properties in GD-OSs. The proposed model could interpret the experimental data on carrier concentration- and temperature-dependence of the Seebeck coefficient, including various kinds of conducting polymer film and small molecule based field-effect transistors (FETs). Compared with the conventional Mott’s VRH and mobility edge model, our model has a much better description of the relationship between the Seebeck coefficient and conductivity. The model could deepen our insight into charge transport in organic semiconductors and provide instructions for the optimization of thermoelectric device performance in a disordered system.
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48

DUC, HUYNH THANH, et NGUYEN TOAN THANG. « MAGNETIC IMPURITY IN A SYSTEM OF INTERACTING ELECTRONS ». Modern Physics Letters B 13, no 24 (20 octobre 1999) : 849–58. http://dx.doi.org/10.1142/s0217984999001044.

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The Kondo effect of the Anderson impurity in a correlated conduction electron system is studied with the slave boson mean-field theory. The interacting conduction electrons are described by a Hubbard model with an interaction of strength U. It is shown that the Kondo temperature T K decreases with an increase of U. In the intermediate regime at half-filling, the exponential scale of the Kondo temperature T K is already lost at the saddle-point level of slave boson formulation.
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49

GROSU, I., M. CRISAN et I. TIFREA. « MAGNETIC SUSCEPTIBILITY OF A DISORDERED HIGH TEMPERATURE SUPERCONDUCTOR ». Modern Physics Letters B 10, no 14 (20 juin 1996) : 635–41. http://dx.doi.org/10.1142/s0217984996000705.

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The temperature and the disorder dependence of the magnetic susceptibility of electrons interacting with spin fluctuations has been calculated. The system is considered to be two-dimensional and the dynamical susceptibility correspond to a strongly correlated electron system in the presence of weak disorder. We obtain deviations from Pauli paramagnetism which are in good agreement with experimental data.
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50

Queenan, R. B., et P. K. Davies. « A transmission electron microscopic study of structural transitions in fast ionic conductors ». Proceedings, annual meeting, Electron Microscopy Society of America 45 (août 1987) : 156–57. http://dx.doi.org/10.1017/s0424820100125713.

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Na ß“-alumina (Na1.67Mg67Al10.33O17) is a non-stoichiometric sodium aluminate which exhibits fast ionic conduction of the Na+ ions in two dimensions. The Na+ ions can be exchanged with a variety of mono-, di-, and trivalent cations. The resulting exchanged materials also show high ionic conductivities.Considerable interest in the Na+-Nd3+-ß“-aluminas has been generated as a result of the recent observation of lasing in the pulsed and cw modes. A recent TEM investigation on a 100% exchanged Nd ß“-alumina sample found evidence for the intergrowth of two different structure types. Microdiffraction revealed an ordered phase coexisting with an apparently disordered phase, in which the cations are completely randomized in two dimensions. If an order-disorder transition is present then the cooling rates would be expected to affect the microstructures of these materials which may in turn affect the optical properties. The purpose of this work was to investigate the affect of thermal treatments upon the micro-structural and optical properties of these materials.
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