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Articles de revues sur le sujet « Electrical Transport Phenomena »

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Auteur : Grafiati
Publié le 7 septembre 2023

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1

Liu, Po-Tsun, T. C. Chang, Shuo-Ting Yan, Chun-Huai Li et S. M. Sze. « Electrical Transport Phenomena in Aromatic Hydrocarbon Polymer ». Journal of The Electrochemical Society 150, no 2 (2003) : F7. http://dx.doi.org/10.1149/1.1535204.

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2

Wei, P. S., S. C. Wang et M. S. Lin. « Transport Phenomena During Resistance Spot Welding ». Journal of Heat Transfer 118, no 3 (1 août 1996) : 762–73. http://dx.doi.org/10.1115/1.2822697.

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Unsteady, axisymmetric transport of mass, momentum, energy, species, and magnetic field intensity with a mushy-zone phase change in workpieces and temperature, and magnetic fields in electrodes during resistance spot welding, are systematically investigated. Electromagnetic force, joule heat, heat generation at the electrode–workpiece interface and faying surface between workpieces, different properties between phases, and geometries of electrodes are taken into account. The computed results show consistencies with observed nugget growth, electrical current, and temperature fields. The effects of the face radius and cone angle of the electrode, parameters governing welding current, electrical contact resistance, magnetic Prandtl number, electrical conductivity ratio, and workpiece thickness on transport phenomena are clearly provided.
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3

Vásquez-A., M. A., G. Romero-Paredes et Ramón Peña-Sierra. « Electrical transport phenomena in nanostructured porous-silicon films ». Revista Mexicana de Física 64, no 6 (31 octobre 2018) : 559. http://dx.doi.org/10.31349/revmexfis.64.559.

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The charge transport mechanisms in nanostructured porous silicon (PS) films were studied through current-voltage (I-V) measurements of planar Au/PS/Au structures at 300 K. The films were formed by electrochemical etching of 1-5 Ω-cm p-type Si (100) wafers producing PS layers of 4.48 x 109 Ω-cm. The charge transport is limited both by the space charge limited currents (SCLC) and the carrier trapping-detrapping kinetics in the inherent localized PS energy levels. I-V characteristics evolve according to the trapping-detrapping carrier kinetics in the PS films showing that the electrical current can be controlled by applying external electric fields. An equivalent trap filling limiting voltage (VTFL) was identified that shifts between 1 and 3 volts by the carrier trapping-detrapping kinetics from the PS intrinsic defect states. An energy band diagram for the PS films is schematically depicted including the influence of the intrinsic PS defect states. To give a reasonable explanation of the found behavior the existence of a thin silicon oxide film covering the network-like-silicon-nanocrystallites is required, in agreement with the widely accepted PS structural models.
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Balberg, Isaac. « Electrical Transport Phenomena in Systems of Semiconductor Quantum Dots ». Journal of Nanoscience and Nanotechnology 8, no 2 (1 février 2008) : 745–58. http://dx.doi.org/10.1166/jnn.2008.a010.

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While a fairly good understanding of optical and transport properties that are associated with single quantum dots has emerged in recent years the understanding of the relation between these properties and the observed macroscopic optical and electrical properties of solid ensembles of such dots is still at a very rudimentary level. This is in particular so in regard to the transport properties where the interplay between inter-dot conduction and the connectivity of the dots network determines the macroscopic observations. Reviewing the basic concepts and issues associated with these two essential ingredients, and considering some recent experimental observations on quantum dot ensembles of CdSe and Si, an effort is made here to derive a whole-but-simple physical basis for the understanding of the transport and the optoelectronic properties of solid state ensemble of semiconductor quantum dots.
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5

Takita, H., S. Murayama, K. Hoshi, X. Li, F. R. de Boer et Y. Obi. « Electrical transport phenomena in amorphous (Hf, Ta) Fe2 alloys ». Journal of Magnetism and Magnetic Materials 140-144 (février 1995) : 307–8. http://dx.doi.org/10.1016/0304-8853(94)00895-7.

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Konczewicz, Leszek, Elżbieta Litwin-Staszewska, Sylvie Contreras, Ryszard Piotrzkowski et Lesław Dmowski. « Electrical transport phenomena in magnesium-doped p-type GaN ». physica status solidi (b) 246, no 3 (19 décembre 2008) : 658–63. http://dx.doi.org/10.1002/pssb.200880521.

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Grigoriev, N. D. « «WIRES WITH HIGH VOLTAGE TRANSPORT CURRENT» ». World of Transport and Transportation 15, no 2 (28 avril 2017) : 244–50. http://dx.doi.org/10.30932/1992-3252-2017-15-2-23.

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[For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version)].ABSTRACT Dmitry A. Lachinov was born 175 years ago and nothing foreshadowed that a man appeared who would explain the theory of transmission (transportation) of electricity over long-distance via wires and without large losses, using high-voltage currents (over 1000 V), power transformers and a three-phase alternating current system. That was Dmitry Lachinov who introduced mathematical methods into electrical engineering, making it possible to create electric machines not on the basis of empiricism, but due to mathematical evaluation of physical phenomena. Keywords: history, electrical engineering, Lachinov, electricity transmission via wires, electric machines, generators, engines, batteries for submarine fleet.
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8

Vasvári, Béla. « Transport phenomena in metallic glasses ». Physica B : Condensed Matter 159, no 1 (juillet 1989) : 79–91. http://dx.doi.org/10.1016/s0921-4526(89)80056-0.

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9

Naumowicz, Monika. « Electrical Properties of Model Lipid Membranes ». Membranes 12, no 2 (21 février 2022) : 248. http://dx.doi.org/10.3390/membranes12020248.

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Biological membranes are essential components of the living systems, and processes occurring with their participation are related mainly to electric phenomena such as signal transduction, existence of membrane potentials, and transport through the membrane [...]
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10

Suchanicz, J., K. Kluczewska-Chmielarz, D. Sitko et G. Jagło. « Electrical transport in lead-free Na0.5Bi0.5TiO3 ceramics ». Journal of Advanced Ceramics 10, no 1 (18 janvier 2021) : 152–65. http://dx.doi.org/10.1007/s40145-020-0430-5.

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AbstractLead-free Na0.5Bi0.5TiO3 (NBT) ceramics were prepared via a conventional oxide-mixed sintering route and their electrical transport properties were investigated. Direct current (DC, σDC) and alternating current (AC, σAC) electrical conductivity values, polarization current (first measurements) and depolarization current, current–voltage (I–U) characteristics (first measurements), and the Seebeck coefficient (α) were determined under various conditions. The mechanism of depolarization and the electrical conductivity phenomena observed for the investigated samples were found to be typical. For low voltages, the I–U characteristics were in good agreement with Ohm’s law; for higher voltages, the observed dependences were I–U2, I–U4, and then I–U6. The low-frequency σAC followed the formula σAC–ωs (ω is the angular frequency and s is the frequency exponent). The exponent s was equal to 0.18–0.77 and 0.73–0.99 in the low- and high-frequency regions, respectively, and decreased with temperature increasing. It was shown that conduction mechanisms involved the hopping of charge carriers at low temperatures, small polarons at intermediate temperatures, and oxygen vacancies at high temperatures. Based on AC conductivity data, the density of states at the Fermi-level, and the minimum hopping length were estimated. Electrical conduction was found to undergo p–n–p transitions with increasing temperature. These transitions occurred at depolarization temperature Td, 280 ℃, and temperature of the maximum of electric permittivity Tm is as typical of NBT materials.
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Abdeen, A. M., O. M. Hemeda, E. E. Assem et M. M. El-Sehly. « Structural, electrical and transport phenomena of Co ferrite substituted by Cd ». Journal of Magnetism and Magnetic Materials 238, no 1 (janvier 2002) : 75–83. http://dx.doi.org/10.1016/s0304-8853(01)00465-6.

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Belroul, Rafika, et Zineb Benamara. « The Transport Phenomena and Electrical Characterizations Study of GaN/GaAs Nanostructures ». Journal of Nanoelectronics and Optoelectronics 13, no 12 (12 décembre 2018) : 1880–85. http://dx.doi.org/10.1166/jno.2018.2456.

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13

SIDOR, Y., F. KOVAC et T. KVACKAJ. « Grain growth phenomena and heat transport in non-oriented electrical steels ». Acta Materialia 55, no 5 (mars 2007) : 1711–22. http://dx.doi.org/10.1016/j.actamat.2006.10.032.

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14

Jasielec, Jerzy J. « Electrodiffusion Phenomena in Neuroscience and the Nernst–Planck–Poisson Equations ». Electrochem 2, no 2 (5 avril 2021) : 197–215. http://dx.doi.org/10.3390/electrochem2020014.

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This work is aimed to give an electrochemical insight into the ionic transport phenomena in the cellular environment of organized brain tissue. The Nernst–Planck–Poisson (NPP) model is presented, and its applications in the description of electrodiffusion phenomena relevant in nanoscale neurophysiology are reviewed. These phenomena include: the signal propagation in neurons, the liquid junction potential in extracellular space, electrochemical transport in ion channels, the electrical potential distortions invisible to patch-clamp technique, and calcium transport through mitochondrial membrane. The limitations, as well as the extensions of the NPP model that allow us to overcome these limitations, are also discussed.
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15

Pop, Eric, et Kenneth E. Goodson. « Thermal Phenomena in Nanoscale Transistors ». Journal of Electronic Packaging 128, no 2 (1 juin 2006) : 102–8. http://dx.doi.org/10.1115/1.2188950.

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As CMOS transistor gate lengths are scaled below 45nm, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot spots in the drain region of the device, which may increase the drain series and source injection electrical resistances. Such trends are accelerated with the introduction of novel materials and nontraditional transistor geometries, like ultrathin body, surround-gate, or nanowire devices, which impede heat conduction. Thermal analysis is complicated by subcontinuum phenomenan including ballistic electron transport, which reshapes the hot spot region compared with classical diffusion theory predictions. Ballistic phonon transport from the hot spot and between material boundaries impedes conduction cooling. The increased surface to volume ratio of novel transistor designs also leads to a larger contribution from material boundary thermal resistance. In this paper we survey trends in transistor geometries and materials, from bulk silicon to carbon nanotubes, along with their implications for the thermal design of electronic systems.
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16

Azza, Mohammed, Jabran Daaif, Abd Elhadi Chahid, Mohammed Salah et Said Belaaouad. « Theoretical Aspect of Physical Phenomena in Inorganic Photovoltaic Cells. Electrical Modeling and Numerical Simulation ». E3S Web of Conferences 297 (2021) : 01024. http://dx.doi.org/10.1051/e3sconf/202129701024.

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This work is based on the development of a theoretical model describing the drift and diffusion transport of photogenerated charge carriers and the impact of space charge on this transport in relation to the different physical phenomena characterizing the photovoltaic conversion in an inorganic silicon-based cell. In a second step, we used a numerical solution of the transport differential equations based on the Runge-Kutta algorithm in the framework of the finite difference method, This led us to an electrical model of the photovoltaic cell and of the photo-generated currents by RLC circuit equipped with a diode modeling the direction of electron and hole transport and allowed us to study the relations between the optical and electrical properties of the cell, as well as the influence of the different concentrations of impurities used for the n-type and p-type doping of the silicon on the properties of absorption of the light photons, the spectral response as well as the conductivity, the open-circuit potential and the short-circuit current.
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17

Northrop, David. « Book Review : Surface Electronic Transport Phenomena in Semiconductors ». International Journal of Electrical Engineering & ; Education 29, no 4 (octobre 1992) : 380. http://dx.doi.org/10.1177/002072099202900417.

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18

Consejo, Ch, L. Konczewicz, S. Contreras, B. Jouault, S. Łepkowsky, M. Zielinski, J. L. Robert, Ph Lorenzini et Y. Cordier. « High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures ». physica status solidi (b) 235, no 2 (février 2003) : 232–37. http://dx.doi.org/10.1002/pssb.200301562.

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19

Misra, S., C. Torres-Verdín, A. Revil, J. Rasmus et D. Homan. « Interfacial polarization of disseminated conductive minerals in absence of redox-active species — Part 1 : Mechanistic model and validation ». GEOPHYSICS 81, no 2 (1 mars 2016) : E139—E157. http://dx.doi.org/10.1190/geo2015-0346.1.

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Electrically conductive mineral inclusions are commonly present in organic-rich mudrock and source-rock formations such as veins, laminations, rods, grains, flakes, and beds. Laboratory and subsurface electromagnetic (EM) measurements performed on geomaterials containing electrically conductive inclusions generally exhibit frequency dispersion due to interfacial polarization phenomena at host-inclusion interfaces. In the absence of redox-active species, surfaces of electrically conductive mineral inclusions are impermeable to the transport of charge carriers, inhibit the exchange of charges and behave as perfectly polarized (PP) interfaces under the influence of an externally applied EM field. Interfacial polarization phenomena involving charge separation, migration, accumulation/depletion, and relaxation around PP interfaces is referred to as PP interfacial polarization; it influences the magnitude and direction of the electric field and charge carrier migration in the geomaterial. We have developed a mechanistic model to quantify the complex-valued electrical conductivity response of geomaterials containing electrically conductive mineral inclusions, such as pyrite and magnetite, uniformly distributed in a fluid-filled, porous matrix made of nonconductive grains possessing surface conductance, such as silica and clay grains. The model first uses a linear approximation of the Poisson-Nernst-Planck equations of dilute solution theory to determine the induced dipole moment of a single isolated conductive inclusion and that of a single isolated nonconductive grain surrounded by an electrolyte. A consistent effective-medium formulation was then implemented to determine the effective complex-valued electrical conductivity of the geomaterial. Model predictions were in good agreement with laboratory measurements of multifrequency complex-valued electrical conductivity, relaxation time, and chargeability of mixtures containing electrically conductive inclusions.
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20

Eisenstein, J. P. « New transport phenomena in coupled quantum wells ». Superlattices and Microstructures 12, no 1 (janvier 1992) : 107–14. http://dx.doi.org/10.1016/0749-6036(92)90231-s.

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21

Kakuta, T., Y. Takagaki, K. Gamo, S. Namba, S. Takaoka et K. Murase. « Ballistic transport phenomena in crossed wire junction ». Superlattices and Microstructures 11, no 2 (janvier 1992) : 185–88. http://dx.doi.org/10.1016/0749-6036(92)90249-5.

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22

Li, P. W., et M. K. Chyu. « Electrochemical and Transport Phenomena in Solid Oxide Fuel Cells ». Journal of Heat Transfer 127, no 12 (23 août 2005) : 1344–62. http://dx.doi.org/10.1115/1.2098828.

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This paper begins with a brief review of the thermodynamic and electrochemical fundamentals of a solid oxide fuel cell (SOFC). Issues concerning energy budget and ideal energy conversion efficiency of the electrochemical processes in an SOFC are addressed. Chemical equilibrium is then discussed for the situations with internal reforming and shift reactions as an SOFC is fed with hydrocarbon fuel. Formulations accounting for electrical potential drops incurred by activation polarization, ohmic polarization, and concentration polarization are reviewed. This leads to a discussion on numerical modeling and simulation for predicting the terminal voltage and power output of SOFCs. Key features associated with numerical simulation include strong coupling of ion transfer rates, electricity conduction, flow fields of fuel and oxidizer, concentrations of gas species, and temperature distributions. Simulation results based primarily on authors’ research are presented as demonstration. The article concludes with a discussion of technical challenges in SOFCs and potential issues for future research.
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Ojha, Swarupa, Madhab Roy, Anil Chamuah, Koyel Bhattacharya et Sanjib Bhattacharya. « Transport phenomena of Cu–S–Te chalcogenide nanocomposites : frequency response and AC conductivity ». Physical Chemistry Chemical Physics 22, no 42 (2020) : 24600–24613. http://dx.doi.org/10.1039/d0cp04076b.

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Encalada-Dávila, Ángel, Mayken Espinoza-Andaluz, Julio Barzola-Monteses, Shian Li et Martin Andersson. « Transport Parameter Correlations for Digitally Created PEFC Gas Diffusion Layers by Using OpenPNM ». Processes 9, no 7 (30 juin 2021) : 1141. http://dx.doi.org/10.3390/pr9071141.

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A polymer electrolyte fuel cell (PEFC) is an electrochemical device that converts chemical energy into electrical energy and heat. The energy conversion is simple; however, the multiphysics phenomena involved in the energy conversion process must be analyzed in detail. The gas diffusion layer (GDL) provides a diffusion media for reactant gases and gives mechanical support to the fuel cell. It is a complex medium whose properties impact the fuel cell’s efficiency. Therefore, an in-depth analysis is required to improve its mechanical and physical properties. In the current study, several transport phenomena through three-dimensional digitally created GDLs have been analyzed. Once the porous microstructure is generated and the transport phenomena are mimicked, transport parameters related to the fluid flow and mass diffusion are computed. The GDLs are approximated to the carbon paper represented as a grouped package of carbon fibers. Several correlations, based on the fiber diameter, to predict their transport properties are proposed. The digitally created GDLs and the transport phenomena have been modeled using the open-source library named Open Pore Network Modeling (OpenPNM). The proposed correlations show a good fit with the obtained data with an R-square of approximately 0.98.
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25

Melnik, Roderick V. N., et Alex Povitsky. « Modelling Coupled and Transport Phenomena in Nanotechnology ». Journal of Computational and Theoretical Nanoscience 3, no 4 (1 août 2006) : i—ii. http://dx.doi.org/10.1166/jctn.2006.3031.

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26

Strobel, Sebastian, Rocío Murcia Hernández, Allan G. Hansen et Marc Tornow. « Silicon based nanogap device for studying electrical transport phenomena in molecule–nanoparticle hybrids ». Journal of Physics : Condensed Matter 20, no 37 (26 août 2008) : 374126. http://dx.doi.org/10.1088/0953-8984/20/37/374126.

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Valenzuela, Edgar, S. A. Gamboa, P. J. Sebastian, J. Moreira, J. Pantoja, G. Ibañez, A. Reyes, B. Campillo et S. Serna. « Proton Charge Transport in Nafion Nanochannels ». Journal of Nano Research 5 (février 2009) : 31–36. http://dx.doi.org/10.4028/www.scientific.net/jnanor.5.31.

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The Nafion perfluorinated membranes are one of the best electrolytes used in the Proton Exchange Membrane Fuel Cell (PEMFC). Some methods have been used to study the electrical properties of Nafion; nevertheless, there are some aspects of the conduction process that are not well understood, such as the contribution of the bulk and the interfacial phenomena to the total proton conduction process. In this work the Electrochemical Impedance Spectroscopy (EIS) was employed in a four electrode system to study the protonic charge transport under conditions that simulate the operation of the PEMFC. Two Nafion membranes were evaluated to determine the relation of the activation procedure with the resistance to the protonic charge transference. The results are not only consistent with other measurements but also allow to separate the protonic charge transference process in two stages. Each stage was studied and their electrical parameters were calculated using Electrical Equivalent Circuits.
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28

Zavaritsky, N. V., A. V. Samoilov, A. A. Yurgens, V. S. Klochko et V. I. Makarov. « Phonon transport phenomena in high-Tc superconductors ». Physica C : Superconductivity and its Applications 162-164 (décembre 1989) : 562–63. http://dx.doi.org/10.1016/0921-4534(89)91156-8.

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Fushinobu, K., A. Majumdar et K. Hijikata. « Heat Generation and Transport in Submicron Semiconductor Devices ». Journal of Heat Transfer 117, no 1 (1 février 1995) : 25–31. http://dx.doi.org/10.1115/1.2822317.

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The reduction of semiconductor device size to the submicrometer range leads to unique electrical and thermal phenomena. The presence of high electric fields (order of 107 V/m) energizes the electrons and throws them far from equilibrium with the lattice. This makes heat generation a nonequilibrium process. For gallium arsenide (GaAs), energy is first transferred from the energized electrons to optical phonons due to strong polar coupling. Since optical phonons do not conduct heat, they must transfer their energy to acoustic phonons for lattice heat conduction. Based on the two-step mechanism with corresponding time scales, a new model is developed to study the process of nonequilibrium heat generation and transport in a GaAs metal semiconductor field effect transistor (MESFET) with a gate length of 0.2 μm. When 3 V is applied to the device, the electron temperature rise is predicted to be more than 1000 K. The effect of lattice heating on electrical characteristics of the device shows that the current is reduced due to decrease in electron mobility. The package thermal conductance is observed to have strong effects on the transient response of the device.
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30

Faisal, Ayad Abed Al-hamza, et Ahmed Alaa Hussein. « Modeling and Simulation of Copper Removal from the Contaminated Soil by a Combination of Adsorption and Electro-kinetic Remediation ». Journal of Engineering 19, no 6 (23 mai 2023) : 695–716. http://dx.doi.org/10.31026/j.eng.2013.06.04.

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Electro-kinetic remediation technology is one of the developing technologies that offer great promise for the cleanup of soils contaminated with heavy metals. A numerical model was formulated to simulate copper (Cu) transport under an electric field using one-dimensional diffusion-advection equations describing the contaminant transport driven by chemical and electrical gradients in soil during the electro-kinetic remediation as a function of time and space. This model included complex physicochemical factors affecting the transport phenomena, such as soil pH value, aqueous phase reaction, adsorption, and precipitation. One-dimensional finitedifference computer program successfully predicted meaningful values for soil pH profiles and Cu concentration profiles. The model considers that: (1) electrical potential in the soil is constant with the time; (2) the effect of temperature is negligible; and (3) dissolution of soil constituents is negligible. The predicted pH profiles and transport of copper in sandy loam soil during electrokinetic remediation were found to reasonably agree with the bench-scale electro-kineticexperimental results. The predicted contaminant speciation and distribution (aqueous, adsorbed, and precipitated) allow for an understanding of the transport processes and chemical reactions that control electro-kinetic remediation.
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Dragan, Ciprian, Mihai Bilici, Subhankar Das et Lucian Dascalescu. « Triboelectrostatic Phenomena in Suction-type Dilute-phase Pneumatic Transport Systems ». IEEE Transactions on Dielectrics and Electrical Insulation 16, no 3 (juin 2009) : 661–67. http://dx.doi.org/10.1109/tdei.2009.5128503.

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Gnudi, Antonio, Farouk Odeh et Massimo Rudan. « Investigation of non-local transport phenomena in small semiconductor devices ». European Transactions on Telecommunications 1, no 3 (mai 1990) : 307–12. http://dx.doi.org/10.1002/ett.4460010312.

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Zhu, L. J., et J. H. Zhao. « Electrical Transport of Perpendicularly Magnetized L10-MnGa and MnAl Films ». SPIN 07, no 03 (septembre 2017) : 1730001. http://dx.doi.org/10.1142/s2010324717300018.

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Ferromagnetic films of [Formula: see text]-ordered MnGa and MnAl that exhibit giant perpendicular magnetic anisotropy and great controllability in the magnetism and structural disorders show promising applications not only in magnetic recording, permanent magnets and spintronics, but also in controllable studies of disorder-relevant electrical transport phenomena. In this paper, we review the intriguing experimental observations of the orbital two-channel Kondo effect and anomalous Hall effect in [Formula: see text]-ordered MnGa and MnAl thin films with perpendicular magnetic anisotropy. We also give a perspective with regards to the future technological and fundamental applications of these perpendicularly magnetized Mn-based binary alloy films.
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Zheng, Ming, Pengfei Guan, Yaping Qi et Litong Guo. « Straintronic effect on electronic transport and metal–insulator transition in correlated metal films by electric field ». Applied Physics Letters 120, no 16 (18 avril 2022) : 161603. http://dx.doi.org/10.1063/5.0082879.

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Tuning the electronic and magnetic properties of strongly correlated oxides by exerting an electric field is of great significance for understanding the mechanisms of striking quantum phenomena and delivering low-dissipation electronic devices. Here, we demonstrate a linear suppression of electrical resistivity for correlated metallic SrVO3 epitaxial films in a continuous and reversible fashion through the converse piezoelectric response-generated linear lateral compressive strain of ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 substrates. By precisely tailoring the polarization domain configuration of the substrate, a lateral tensile strain can also be dynamically induced into films and, thus, can robustly increase the resistivity due to reduced effective electronic bandwidth and enhanced electron–electron interaction. Particularly, the electrically triggered nonvolatile opening and closing of a metal–insulator transition is driven by the ferroelastic strain-controlled Mott gap. Our findings illustrate the vital role of an electric field in controlling the lattice degree of freedom and electron correlation and provide a framework for exploring the essential physics of the straintronic effect in correlated metallic oxides.
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Filatov, A., A. Pogorelov, D. Kropachev et O. Dmitrichenko. « Dislocation Mass-Transfer and Electrical Phenomena in Metals under Pulsed Laser Influence ». Defect and Diffusion Forum 363 (mai 2015) : 173–77. http://dx.doi.org/10.4028/www.scientific.net/ddf.363.173.

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The influence of moving dislocations on mass-transfer and the phenomena, accompanying it in pulse-deformed metals is studied in a real-time. Transport of self-interstitial atoms (SIAs) by mobile edge dislocations in crystal with FCC lattice is investigated by molecular dynamics. A strain rate (106s-1) and dislocation density (1010– 1012cm-2) in simulated crystal corresponds to a laser effect in a Q-factor mode. The experimental investigations in a real-time are performed by recording of electrical signal induced by the laser pulse irradiation of metal foils of different crystal structures.
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Li, Runze, Faguang Yan, Yongcheng Deng, Yaxuan Shang et Yu Sheng. « Tunable rapid electron transport in titanium oxide thin films ». Applied Physics Letters 122, no 1 (2 janvier 2023) : 011601. http://dx.doi.org/10.1063/5.0132959.

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Rapid electron transport triggers many novel physical phenomena and becomes a critical point for high-speed electronics. Two-dimensional electron gas (2DEG) has drawn great attention due to its high electron mobility, and this has been observed in different materials, such as semiconductor, oxide interfaces, and 2D materials. In this paper, we report, for the first time, the existence and electrical manipulation of 2DEG in the Schottky quantum well, which was formed in the titanium oxide thin films. We take the asymmetry interface electron scattering effect into consideration when studying the electrical transport properties of our multilayer thin films. We found electrons would be transferred from the low-mobility semiconducting and metallic conductive channels to the high-mobility 2DEG conductive channel with an in-plane applied electric field. Therefore, electron concentration and mobility of the 2DEG formed in the Schottky quantum well could be tuned, and the nano-devices exhibited non-linear voltage–current curves. The differential resistivity of the nano-devices could decrease by two orders with increasing electric field at room temperature. Weak electron localization of electrons was experimentally observed in our nano-devices at low temperature, which further demonstrated the existence of 2DEG in the Schottky quantum well. Our work will provide us new physics about the rapid electron transport in the multilayer thin films and bring novel functional devices for the modern microelectronic industry.
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Konczewicz, L., E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała et al. « Electrical transport properties of highly doped N-type GaN materials ». Semiconductor Science and Technology 37, no 5 (8 avril 2022) : 055012. http://dx.doi.org/10.1088/1361-6641/ac5e01.

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Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under study were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy and halide vapor phase epitaxy. The temperature dependence of resistivity and Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. The measurements at sub-room temperatures allow the study of scattering mechanisms related to extrinsic material properties. The observed temperature dependences of the electrical transport properties were analyzed in the frame of the model taking into account a typical scattering mechanism and degree of degeneracy of free carrier electron gas. The limitations of the applied models will be presented.
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Bhosale, Dnyaneshwar R., et Shankar I. Patil. « Oxygen nonstoichiometry effects in spin Seebeck insulating Y3−xPrxFe5O12+δ materials ». AIP Advances 12, no 6 (1 juin 2022) : 065103. http://dx.doi.org/10.1063/5.0087629.

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Yttrium iron garnet (Y3Fe5O12) and its derivatives are ferrimagnetic spin Seebeck insulating materials crucial for the spin transport based phenomena such as the spin Seebeck effect (SSE) and spin Hall magnetoresistance. Structure–property correlation studies of such materials under different conditions are useful for optimizing the relevant constraint in the existed phenomena. The usage of Y3Fe5O12 type materials over the broad range of temperature conditions (27–450 °C) in SSE is under study. We report here the structure–property correlation in spin Seebeck insulating Y3− xPr xFe5O12+ δ oxides as a representative material and introduce the additional degrees of freedom in the crystal system relevant to the spin transport based phenomena under high temperature conditions. The natural tendency of having oxygen nonstoichiometry in an iron garnet family of materials strengthens the Fe–O–Fe superexchange interaction, which, in turn, tends to increase the spin voltage correlated magnetic parameters. The analysis of experimental high temperature neutron diffraction data (over 27–450 °C) reveals the oxide ion nonstoichiometry and excess oxide ion transport pathways at moderate temperature 150 °C in the crystal lattices of studied garnet materials. Oxide ion nonstoichiometry, ionic transport, and electron hopping in crystal lattices cause a tremendous variation of electrical conductivity (10−11–10−2 S cm−1) over a moderate change of temperature (27–450 °C). The occurrence of electrical transport in the required thermal gradient over the garnet material in SSE can evoke the additional degrees of freedom in the usage of such materials at high temperatures. The present work provides a new outlook in terms of structure–property correlation for spin transport based materials.
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Assefa, Gezahegn. « Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors ». Advances in Condensed Matter Physics 2021 (12 juillet 2021) : 1–5. http://dx.doi.org/10.1155/2021/6663876.

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Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.
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40

Ghalem, A., L. Huitema, A. Crunteanu, M. Rammal, L. Trupina, L. Nedelcu, M. G. Banciu et al. « Electrical transport properties and modelling of electrostrictive resonance phenomena in Ba2/3Sr1/3TiO3thin films ». Journal of Applied Physics 120, no 18 (14 novembre 2016) : 184101. http://dx.doi.org/10.1063/1.4966942.

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Pereira, L., E. Pereira et H. Gomes. « UV and visible photoconductivity of undoped diamond films : morphology and related electrical transport phenomena ». Diamond and Related Materials 9, no 9-10 (septembre 2000) : 1621–25. http://dx.doi.org/10.1016/s0925-9635(00)00297-1.

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Ивлиев, А. Д. « Электрическое сопротивление редкоземельных металлов и их сплавов при высоких температурах : роль магнитного рассеяния ». Физика твердого тела 62, no 10 (2020) : 1587. http://dx.doi.org/10.21883/ftt.2020.10.49900.110.

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The results of an experimental study of the electrical resistivity of rare-earth metals and their alloys are analyzed. A procedure for separating contributions to resistance is proposed. It was found that the magnetic component of the electrical resistance in the paramagnetic phase decreases to zero when heated. It is noted that modern models of transport phenomena do not describe this phenomenon
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Assefa, Migbar, Xin Lai, Lisheng Liu et Yang Liao. « Peridynamic Formulation for Coupled Thermoelectric Phenomena ». Advances in Materials Science and Engineering 2017 (2017) : 1–10. http://dx.doi.org/10.1155/2017/9836741.

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Modeling of heat and electrical current flow simultaneously in thermoelectric convertor using classical theories do not consider the influence of defects in the material. This is because traditional methods are developed based on partial differential equations (PDEs) and lead to infinite fluxes at the discontinuities. The usual way of solving such PDEs is by using numerical technique, like Finite Element Method (FEM). Although FEM is robust and versatile, it is not suitable to model evolving discontinuities. To avoid such shortcomings, we propose the concept of peridynamic theory to derive the balance of energy and charge equations in the coupled thermoelectric phenomena. Therefore, this paper presents the transport of heat and charge in thermoelectric material in the framework of peridynamic (PD) theory. To illustrate the reliability of the PD formulation, numerical examples are presented and results are compared with those from literature, analytical solutions, or finite element solutions.
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44

Arendt, Peter. « Nearly Unattenuated Charge Density Wave Transport in a Linear Chain Conductor Fabricated by Spark Discharge ». Zeitschrift für Naturforschung A 67, no 1-2 (1 février 2012) : 29–38. http://dx.doi.org/10.5560/zna.2011-0054.

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Chemical preparation techniques have proved in the past unsuitable for the synthesis of linear chain conductors which are said to exhibit anomalously large electrical conductivities via moving charge density waves (CDWs) which are depinned from the underlying linear ionic lattice and move in a direct current (DC) electric field nearly unattenuated. We present a novel technique which uses only purely physical processes to fabricate linear chain conductors which seem to meet all claims laid by the CDW mechanism of conductivity in its ideal form. A spark engraves in an originally low-conducting nonlinear silver-based material, driven far from equilibrium beyond some critical power input, a discharge pattern, inside the branches of which chains of Ag+-ions run which form a high-conducting current path, along which CDWs may propagate nearly unattenuated. The material obtained exhibits an electrical conductivity which is by four orders of magnitude higher than the conductivity of metallic silver. A simple model is presented to explain this high conductivity and some related phenomena associated with electrical conduction via a moving CDW
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Feliciangeli, M. C., M. C. Rossi, G. Conte et V. Ralchenko. « Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond ». Superlattices and Microstructures 46, no 1-2 (juillet 2009) : 188–94. http://dx.doi.org/10.1016/j.spmi.2008.12.001.

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Kinraide, Thomas B. « Ion fluxes considered in terms of membrane-surface electrical potentials ». Functional Plant Biology 28, no 7 (2001) : 607. http://dx.doi.org/10.1071/pp01019.

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Ions transported through plasma membranes encounter electrical charges, and associated electrical potentials, at the membrane surfaces. The ionic composition of the tissue-bathing medium influences both the surface charge density and the surface electrical potential. Changes in surface electrical potential may affect ion transport by altering two components of the chemical potential difference (Δµj ) of an ion through the membrane. First, the surface activity of the transported ion will change because of electrostatic attraction or repulsion. Second, the surface-to-surface transmembrane potential difference will change. (This is different from the bulk-phase-to-bulk-phase transmembrane potential difference measured with microelectrodes.) These changes in the components of the chemical potential may change the flux of an ion through the membrane even if the surface-to-surface Δµj (equal to the bulk-phase-to-bulk-phase Δµj ) remains constant. The Goldman-Hodgkin-Katz (GHK) flux equation does not take into account these surface-potential effects. The equation has been modified to incorporate surface potentials computed by a Gouy-Chapman-Stern model and surface ion activities computed by Nernst equations. The modified equation (despite several additional deficiencies of the GHK model) successfully predicts many transport phenomena not predicted by the standard GHK equation. Thus electrostatic effects may account for saturation, cis- and trans-inhibition, rectification, voltage gating, shifts in voltage optima, and other phenomena also attributable to other mechanisms.
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47

Ideue, Toshiya, et Yoshihiro Iwasa. « Symmetry Breaking and Nonlinear Electric Transport in van der Waals Nanostructures ». Annual Review of Condensed Matter Physics 12, no 1 (10 mars 2021) : 201–23. http://dx.doi.org/10.1146/annurev-conmatphys-060220-100347.

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The recent development of artificially fabricated van der Waals nanostructures makes it possible to design and control the symmetry of solids and to find novel physical properties and related functionalities. A characteristic physical property reflecting such symmetry breaking is the nonlinear response, which is typically studied as the second harmonic generation of light, although studies have recently expanded to include various transport phenomena. An important aspect of nonlinear transport for modern condensed matter physics is that it is not only a unique functionality of noncentrosymmetric systems but also an emergent property reflecting underlying physics such as spin–orbit interaction, superconductivity, magnetism, and band geometry/topology. In this article, we review the nonlinear electrical transport in noncentrosymmetric van der Waals nanostructures obtained by exfoliation, nano-structure fabrication, or the application of an electric field, in particular, nonreciprocal transport resulting from inversion symmetry breaking and the bulk photovoltaic effect in nanomaterials without conventional p- n junctions.
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Tsumoto, Kunichika, et Yasutaka Kurata. « Bifurcations and Proarrhythmic Behaviors in Cardiac Electrical Excitations ». Biomolecules 12, no 3 (16 mars 2022) : 459. http://dx.doi.org/10.3390/biom12030459.

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The heart is a hierarchical dynamic system consisting of molecules, cells, and tissues, and acts as a pump for blood circulation. The pumping function depends critically on the preceding electrical activity, and disturbances in the pattern of excitation propagation lead to cardiac arrhythmia and pump failure. Excitation phenomena in cardiomyocytes have been modeled as a nonlinear dynamical system. Because of the nonlinearity of excitation phenomena, the system dynamics could be complex, and various analyses have been performed to understand the complex dynamics. Understanding the mechanisms underlying proarrhythmic responses in the heart is crucial for developing new ways to prevent and control cardiac arrhythmias and resulting contractile dysfunction. When the heart changes to a pathological state over time, the action potential (AP) in cardiomyocytes may also change to a different state in shape and duration, often undergoing a qualitative change in behavior. Such a dynamic change is called bifurcation. In this review, we first summarize the contribution of ion channels and transporters to AP formation and our knowledge of ion-transport molecules, then briefly describe bifurcation theory for nonlinear dynamical systems, and finally detail its recent progress, focusing on the research that attempts to understand the developing mechanisms of abnormal excitations in cardiomyocytes from the perspective of bifurcation phenomena.
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Huang, Yu-Ting, Chun-Wei Huang, Jui-Yuan Chen, Yi-Hsin Ting, Shao-Liang Cheng, Chien-Neng Liao et Wen-Wei Wu. « Mass transport phenomena in copper nanowires at high current density ». Nano Research 9, no 4 (24 février 2016) : 1071–78. http://dx.doi.org/10.1007/s12274-016-0998-9.

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Landi, Giovanni, Sergio Pagano, Heinz Christoph Neitzert, Costantino Mauro et Carlo Barone. « Noise Spectroscopy : A Tool to Understand the Physics of Solar Cells ». Energies 16, no 3 (26 janvier 2023) : 1296. http://dx.doi.org/10.3390/en16031296.

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Noise spectroscopy is essentially focused on the investigation of electric fluctuations produced by physical mechanisms intrinsic to conductor materials. Very complex electrical transport phenomena can be interpreted through the study of the fluctuation properties, which provide interesting information both from the point of view of basic research and of applications. In this respect, low-frequency electric noise analysis was proposed more than twenty years ago to determine the quality of solar cells and photovoltaic modules, and, more recently, for the reliability estimation of heterojunction solar cells. This spectroscopic tool is able to unravel specific aspects related to radiation damage. Moreover, it can be used for a detailed temperature-dependent electrical characterization of the charge carrier capture/emission and recombination kinetics. This gives the possibility to directly evaluate the system health state. Real-time monitoring of the intrinsic noise response is also very important for the identification of the microscopic sources of fluctuations and their dynamic processes. This allows for identifying possible strategies to improve efficiency and performance, especially for emerging photovoltaic devices. In this work are the reported results of detailed electrical transport and noise characterizations referring to three different types of solar cells (silicon-based, organic, and perovskite-based) and they are interpreted in terms of specific physical models.
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