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Articles de revues sur le sujet "Cu2ZnSnS4"
1
Солован, М. Н., А. И. Мостовой, С. В. Биличук, F. Pinna, T. T. Ковалюк, В. В. Брус, Э. В. Майструк, И. Г. Орлецкий et П. Д. Марьянчук. « Структурные и оптические свойства пленок Cu-=SUB=-2-=/SUB=-ZnSn(S,Se)-=SUB=-4-=/SUB=-, полученных методом магнетронного распыления мишени из сплава Cu-=SUB=-2-=/SUB=-ZnSn ». Физика твердого тела 59, no 8 (2017) : 1619. http://dx.doi.org/10.21883/ftt.2017.08.44767.32.
Texte intégralRésumé :
Представлены результаты исследований структурных и оптических свойств тонких пленок Cu2ZnSn(S,Se)4, полученных путем сульфитации (селенизации) пленок Cu2ZnSn, которые были напылены методом магнетронного распыления на постоянном токе с использованием мишени Cu2ZnSn (99.99%) стехиометрического состава. Установлено, что тонкие пленки Cu2ZnSn(S,Se)4 являются поликристаллическими с размерами зерен ~ 60 nm. Определена оптическая ширина запрещенной зоны тонких пленок Cu2ZnSnS4 (Eopg=1.65 eV) и Cu2ZnSnSe4 (Ropg=1.2 eV). А.И. Мостовой благодарит программу HUMERIA за присужденную постдоковскую стипендию. DOI: 10.21883/FTT.2017.08.44767.32
2
Courel, Maykel, Miriam M. Nicolás et Osvaldo Vigil-Galán. « Study on the physical properties of Cu2ZnSnS4 thin films deposited by pneumatic spray pyrolysis technique ». Applied Chemical Engineering 4, no 1 (27 avril 2021) : 9. http://dx.doi.org/10.24294/ace.v4i1.652.
Texte intégralRésumé :
The acquisition of new materials for the manufacturing of high efficiency and low-cost photovoltaic devices has currently become a challenge. Thin films of CuInGaSe and CdTe have been widely used in solar cell of second generation, achieving efficiencies about 20 %; however, the low abundance of In and Te as well as the toxicity of Cd is the primary obstacles to their industrial production. Compounds such as Cu2ZnSnS4, Cu2ZnSnSe4 and Cu2ZnSn(SSe)4 have emerged as an important and less costly alternative for efficient energy conversion in the future. In addition, these compounds have the required characteristics to be used as an absorber material in solar cells (band-gap close to 1.4 eV, an absorption coefficient greater than 104 cm-1 and a p-type conductivity). In this work, we present a study of the structural, compositional, morphological and optical properties of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique as well as their dependence on temperature.
3
Гуртовой, В. Г., et А. У. Шелег. « Влияние ионизирующего излучения на диэлектрические характеристики монокристаллов Cu-=SUB=-2-=/SUB=-ZnSn(S-=SUB=-x-=/SUB=-Se-=SUB=-1-x-=/SUB=-)-=SUB=-4-=/SUB=- ». Физика твердого тела 59, no 2 (2017) : 236. http://dx.doi.org/10.21883/ftt.2017.02.44040.263.
Texte intégralRésumé :
Изучено влияние электронного облучения на проводимость и диэлектрические характеристики монокристаллов Cu2ZnSnS4, Cu2ZnSnSe4 и твердых растворов на их основе. Показано, что с увеличением дозы облучения значения диэлектрической проницаемости уменьшаются, а удельной электропроводности резко возрастают. DOI: 10.21883/FTT.2017.02.44040.263
4
Pogue, Elizabeth A., Melissa Goetter et Angus Rockett. « Reaction kinetics of Cu2-xS, ZnS, and SnS2 to form Cu2ZnSnS4 and Cu2SnS3 studied using differential scanning calorimetry ». MRS Advances 2, no 53 (2017) : 3181–86. http://dx.doi.org/10.1557/adv.2017.384.
Texte intégralRésumé :
ABSTRACTDifferential scanning calorimetry experiments on mixed Cu2-xS, ZnS, and SnS2 precursors were conducted to better understand how Cu2ZnSnS4 (CZTS) and Cu2SnS3 form. The onset temperatures of Cu2SnS3 reactions and CZTS suggest that the ZnS phase may mediate Cu2SnS3 formation at lower temperatures before a final CZTS phase forms. We also found no evidence of a stable Cu2ZnSn3S8 phase. The major diffraction peaks associated with Cu2ZnSnS4, and Cu2SnS3 (overlaps with ZnS, as well) began to grow around 380 °C, although the final reaction to form Cu2ZnSnS4 probably did not occur until higher temperatures were reached. An exothermic reaction was observed corresponding to formation of this phase. There was some variability in the onset temperature for reactions to form Cu2SnS3. At least 5 steps are involved in this reaction and several segments of the reaction had relatively reproducible energies.
5
Mukherjee, Binayak, Eleonora Isotta, Carlo Fanciulli, Narges Ataollahi et Paolo Scardi. « Topological Anderson Insulator in Cation-Disordered Cu2ZnSnS4 ». Nanomaterials 11, no 10 (1 octobre 2021) : 2595. http://dx.doi.org/10.3390/nano11102595.
Texte intégralRésumé :
We present the first candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High-energy reactive mechanical alloying produces a polymorph of Cu2ZnSnS4 with high cation disorder. Density functional theory calculations show an inverted ordering of bands at the Brillouin zone center for this polymorph, which is in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be connected to the closely related Cu2ZnSnSe4, which was previously predicted to be a 3D topological insulator, while band structure calculations with a slab geometry reveal the presence of robust surface states. This evidence makes a strong case in favor of a novel topological phase. As such, the study opens up a window to understanding and potentially exploiting topological behavior in a rich class of easily-synthesized multinary, disordered compounds.
6
Persson, Clas. « Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4 ». Journal of Applied Physics 107, no 5 (mars 2010) : 053710. http://dx.doi.org/10.1063/1.3318468.
Texte intégral
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Gonce, Mehmet K., Melike Dogru, Emre Aslan, Faruk Ozel, Imren Hatay Patir, Mahmut Kus et Mustafa Ersoz. « Photocatalytic hydrogen evolution based on Cu2ZnSnS4, Cu2ZnSnSe4 and Cu2ZnSnSe4−xSx nanofibers ». RSC Advances 5, no 114 (2015) : 94025–28. http://dx.doi.org/10.1039/c5ra18877f.
Texte intégralRésumé :
New photocatalytic systems for H2 evolution have been reported by using Cu2ZnSnS4, Cu2ZnSnSe4, and Cu2ZnSnSe4−xSx nanofiber catalysts under visible light irradiation.
8
Lin, Xianzhong, Jaison Kavalakkatt, Martha Ch Lux-Steiner et Ahmed Ennaoui. « Air-stable solution processed Cu2ZnSn(Sx,Se(1-x))4 thin film solar cells : influence of ink precursors and preparation process ». MRS Proceedings 1538 (2013) : 107–14. http://dx.doi.org/10.1557/opl.2013.1024.
Texte intégralRésumé :
ABSTRACTQuaternary semiconductors, Cu2ZnSnS4 and Cu2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20 %. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.
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Kovaliuk, T. T., E. V. Maistruk, M. N. Solovan, I. P. Koziarskyi et P. D. Maryanchuk. « Study on Cu2ZnSnSe4 crystals and heterojunctions on their basis ». Технология и конструирование в электронной аппаратуре, no 5-6 (2018) : 37–43. http://dx.doi.org/10.15222/tkea2018.5-6.37.
Texte intégralRésumé :
The most promising materials for the solar radiation converters are such compounds as CdTe and Cu(In, Ga)Se2, CuIn(S, Se)2, CuGa(S, Se)2 solid solutions. However, the uneconomic nature of Cd, Te and the limited supply of In and Ga, as well as their high cost, force researchers to replace In and Ga with the more common elements of II and IV groups, namely Zn and Sn. Apart from that, researchers are now testing such new semiconductor compounds as Cu2ZnSnS4, Cu2ZnSnSe4, and solid solutions on their basis. These compounds have a band gap width (Eg ≈ 1.5 eV) close to optimal for the conversion of solar energy, a high light absorption coefficient (≈ 105cm–1), a long lifetime and a high mobility of charge carriers. Moreover, the interest in such semiconductor heterojunctions as TiO2/Cu2ZnSnS4, which have several advantages over homo-transitions, is steadily growing at present. The paper presents results studies of kinetic properties of Cu2ZnSnSe4 crystals. We fabricated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions, determined their main electrical parameters and built their energy diagram. The Cu2ZnSnSe4 crystals have p-type conductivity and the Hall coefficient practically independent of temperature. The temperature dependence of the electrical conductivity σ for Cu2ZnSnSe4 crystalsis metallic in character, i. e. σ decreases with increasing temperature, which is caused by a decrease in the mobility of the charge carriers with the growth of T. Thermoelectric power for the samples is positive, which also indicates the prevalence of p-type conductivity. In this study, the n-TiO2/p-Cu2ZnSnSe4 heterojunctions were produced by reactive magnetron sputtering of a thin TiO2 film on the Cu2ZnSnSe4 substrate. The energy diagram of the investigated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions was constructed in accordance with the Anderson model, without taking into account the surface electrical states and the dielectric layer, based on the values of the energy parameters of semiconductors determined experimentally and taken from literary sources. The authors have also investigated electrical properties of the heterojunctions: the value of the potential barrier was determined, the value of the series resistance and shunt resistance (respectively, Rs = 8 W and Rsh = 5.8 kW) at room temperature. The dominant mechanisms of current transfer were established: tunneling-recombination mechanism in the voltage range from 0 to 0.3 V, and over-barrier emission and tunneling with inverse displacement in the voltage range from 0.3 to 0.45 V.
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Botti, Silvana, David Kammerlander et Miguel A. L. Marques. « Band structures of Cu2ZnSnS4 and Cu2ZnSnSe4 from many-body methods ». Applied Physics Letters 98, no 24 (13 juin 2011) : 241915. http://dx.doi.org/10.1063/1.3600060.
Texte intégralThèses sur le sujet "Cu2ZnSnS4"
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Kühnlein, Holger H. « Elektrochemische Legierungsabscheidung zur Herstellung von Cu2ZnSnS4 Dünnschichtsolarzellen ». Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2007. http://nbn-resolving.de/urn:nbn:de:swb:14-1194790522501-93202.
Texte intégralRésumé :
Die als Absorbermaterial für Dünnschichtsolarzellen geeigneten Verbindungshalbleiter Cu2ZnSnS4 (CZTS) und Cu2ZnSnS(4-x)Sex (x<3, CZTSSe) konnten erfolgreich durch Kombination der elektrochemischen Legierungsabscheidung und der anschließenden Sulfurisierung in H2S-haltiger Atmosphäre hergestellt werden. In früheren Arbeiten wurden die viel versprechenden Eigenschaften von CZTS und Cu2ZnSnSe4 (CZTSe), als In und Ga freie und damit kostengünstige Alternativen, bereits ausführlich vorgestellt. Im Rahmen dieser Arbeit konnte anhand von kristallographischen Ergebnissen sowie durch Untersuchungen der Bandlückenenergien bestätigt werden, dass die Kesterite CZTS (1,46eV) und CZTSSe (1,32eV) erfolgreich mittels einer nasschemischen Vorstufe herstellbar sind. Weiterhin wurde erstmalig der Zusammenhang unterschiedlicher Stöchiometrien anhand ermittelter Halbleitereigenschaften (Na, Eg, EFB) gezeigt. Auf diesen Ergebnissen basierend wurde eine optimale Zusammensetzung zur Herstellung funktionaler Absorberschichten bestimmt. Dennoch zeigt sich, dass die Prozessparameter der Gasphasen-Sulfurisierung entscheidend die Bildung homogener Schichten beeinflusst. Die beobachtete große Kristallverteilung und die dabei auftretenden lokalen Löcher setzten die Funktionalität der hergestellten Solar Zellen (Al/ZnO:Al/CdS/CZTS/Mo/Glas) deutlich herab. Trotz der geringen Wirkungsgrade konnte aus einer Reihe unterschiedlicher Absorbermaterialien eine optimale Stöchiometrie (~Cu2Zn1.1Sn0.9S4) ermittelt werden. Die elektrochemische Coabscheidung von Se (~Cu2Zn1.2Sn0.9Se0.3) und die dadurch erfolgte partielle Substitution von S durch Se bewirkte, verglichen zur CZTS Morphologie, eine kompaktere und geschlossene Schichtstruktur. Der Einfluss des Selenanteils wurde dabei anhand detaillierter kristallographischer Untersuchungen und einer reduzierten Bandlückenenergie (1,32eV) bestätigt. Obwohl deutlich reproduzierbare Diodeneigenschaften über große Flächen beobachtet wurden, konnten keine Verbesserung des Wirkungsgrads erzielt werden. Cu2ZnSn (CZT) und Cu2ZnSnSe0.3 (CZTSe) Precursorschichten wurden mittels eines neu entwickelten alkalischen sowie zyanidfreien Elektrolyten auf Mo beschichteten Glassubstraten abgeschieden. Dieser alkalische Elektrolyt zeigte eine hohe Langzeitstabilität und die bisher unbekannte Möglichkeit der Abscheidung hoher Zinnanteile bei niedrigen Temperaturen. Aufgrund detaillierter elektrochemischer Untersuchungen konnte ein fundamentales Verständnis hinsichtlich der Einflüsse unterschiedlicher Additive, Konzentrationen und Temperaturen erzielt werden. Diese Ergebnisse konnten zur Interpretation der beobachteten potentialabhängigen Legierungsbildung herangezogen werden. Im Rahmen eines wesentlich fundamentalen Ansatzes erfolgte weiterhin die Charakterisierung der Legierungsbildung, ausgehend von unterschiedlicher Metallgehalte im Elektrolyten, anhand eines kürzlich publizierten kinetischen Modells zur elektrochemischen Legierungsabscheidung. Basierend auf diesen Untersuchungen konnte das vorgestellte Badsystem aufgrund einer genauen Einstellbarkeit und Nachdosierung erfolgreich zur ternären Abscheidung von Precursorschichten verwendet werdenCu2ZnSnS4 (CZTS) and Cu2ZnSnS(4-x)Sex (x<0.3, CZTSSe) thin film solar cell absorber materials were successfully formed by combining a one step electrochemical precursor deposition followed by a vapour phase sulfurization process. CZTS and Cu2ZnSnSe4 (CZTSe) are known as promising candidates for thin film solar cell applications without using rare and thus expensive materials like In and Ga. This thesis confirmed by XRD and band gap energy data the potential to produce the kesterite type semiconductor materials CZTS (1,46eV) and CZTSSe (1,32eV) via a wet chemical precursor step. This paper presents for the first time the impact of different absorber compositions on semiconductor properties (NA, Eg, EFB) of the bulk material. Based on this data an optimum stoichiometry was identified to produce a functional absorber layer. However, sulfurization remained as the most critical process to achieve homogeneous thin films. In the most cases local pin holes and a large crystal size distribution diminished the conversion efficiency of produced solar cell samples (Al/ZnO:Al/CdS/CZTS/Mo/glass). Nevertheless an optimum performance was found for a slight excess of Zn (~Cu2Zn1.1Sn0.9S4). The electrochemical codeposition of Se (~Cu2Zn1.2Sn0.9Se0.3) at the precursor step enabled to do a partial substitution of S by Se which was identified to improve CZTS morphology into a homogeneous and dense layer. The expected impact of Se was also confirmed by detailed crystallographic and band gap energy (1.32eV) measurements. Although solar cell function was found for enlarged areas the low overall conversion efficiency could be not pushed to higher levels. Cu2ZnSn (CZT) and Cu2ZnSnSe0.3 (CZTSe) precursor layers were directly electrodeposited on Mo coated soda line glass substrates from a new developed alkaline cyanide free alloy bath system. The presented electrolyte showed high long term stability and an up to now unknown high rate of Sn codeposition at low electrolyte temperatures. Results of a detailed electrolyte characterization gave a fundamental understanding of additive, concentration and temperature effects. This knowledge was successfully linked to explain the potential depended alloy composition effects. As a more fundamental approach a new kinetic model of the electrochemical alloy deposition was used to characterize the impact of changed electrolyte metal contents on the resulting alloy composition. Based on this data the presented alloy bath system was successfully applied for precise adjustment and replenishment during the ternary precursor deposition
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Handwerg, Martin. « Thermische und elektrische Eigenschaften der funktionellen Halbleiter beta-Ga2O3, Cu2ZnSnS4 und Cu2ZnSnSe4 ». Doctoral thesis, Humboldt-Universität zu Berlin, 2019. http://dx.doi.org/10.18452/20384.
Texte intégralRésumé :
Halbleitermaterialien sind in den elektrischen Anwendungen der heutigen Zeit unerlässlich
geworden. In dieser Arbeit wird der Fokus auf die Untersuchung der elektrischen und thermischen Eigenschaften von zwei Halbleiterklassen gelegt. Zum einen wird mit -Ga2O3 ein Mitglied der Klasse der transparenten leitfähigen Oxide untersucht.Hier wurden die elektrischen
Eigenschaften von dünnen Schichten (Dicke von 28nm-225nm) und Volumenkristallen
temperaturabhängig untersucht.Dabei zeigt sich bei Volumenkristallen und mindestens
150nm dicken Schichten eine Steigerung der elektrischen Leitfähigkeit bis 100K durch
die Streuung von Elektronen an Störstellen und bei Temperaturen über 100K wieder ein
Abfall der elektrischen Leitfähigkeit durch Elektron-Phonon-Wechselwirkung.
Die Untersuchung der thermische Leitfähigkeit von beta-Ga2O3 zeigt ein anisotropes Verhalten
mit minimalen Werten in [100]-Richtung und maximalen Werten in [010]-Richtung.
Die Temperaturabhängigkeit der thermischen Eigenschaften zeigt eine Verringerung der
thermischen Leitfähigkeit und der thermischen Diffusivität mit steigender Temperatur.
Eine zweite untersuchte Materialklasse ist die der Kesterite. Zu dieser Kristallstruktur
wurden zwei Elementkonfigurationen untersucht, Kupfer-Zink-Zinn-Sulfid und Kupfer-
Zink-Zinn-Selenid. Der Transport bei Raumtemperatur und darunter findet über verschiedene
Tunnelprozesse lokalisierter Ladungsträger statt. Zusätzlich wird auf die Veränderung
der elektrischen Eigenschaften durch die Kristallinität und Komposition eingegangen.
Die thermischen Eigenschaften zeigen analog zum beta-Ga2O3 eine Dominanz
der Phonon-Phonon-Umklapp-Streuung bei hohen Temperaturen, während bei niedrigen
Temperaturen Streuung an Störstellen und Grenzflächen vorherrscht. Methodisch zeigt diese Arbeit unterschiedlichste Messmethoden zur Charakterisierung
der elektrischen und thermischen Eigenschaften, welche die Standardmethoden sowohl
nutzen, als auch sinnvoll erweitern.Semiconductors are essential for electronic applications nowadays. Here, the electrical and thermal properties of two semiconductor classes with huge application potential are investigated. As a transparent conducting oxide beta-Ga2O3 is investigated. In this work, the temperature dependent electrical properties were investigated for bulk materials and thin films. An increase in the electrical conductivity until 100K is found through electron-impurity-scattering and a decrease at higher temperatures through electron-phonon-scattering for for films with a thickness of at least 150nm. The investigation of the thermal properties of -Ga2O3 show an anisotropy for the different crystal orientations with minimal primary axis values for the [100]-direction and maximal values for the [010]-direction. The temperature-dependence of the thermal properties shows a decease in conductivity and diffusivity for increasing temperature. For temperatures over 150K phonon-phonon-Umklapp-scattering can explain the measured values. For low temperatures phonon-impurity scattering is most likely the dominant scattering mechanism. A second investigated material class are kesterites. For this crystal structure two configurations were investigated, copper-zinc-tin-sulfide and copper-zinc-tin-selenide. The electrical properties show semiconducting characteristics with p-type conduction. The transport processes are defined through localised thermal activated tunneling within the band gap. Other reductions of the mobility are found by the crystalinity and the composition of the materials. The thermal properties show dominant phonon-phonon- Umklapp-scattering at higher temperatures and phonon-impurity-scattering for lower temperatures in a similar way as in beta-Ga2O3. This work shows new implemented measurement methods for investigating electrical and thermal properties as extentions to common methods.
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Qu, Yongtao. « Cu2ZnSn(S,Se)4 solar cells prepared from Cu2ZnSnS4 nanoparticle inks ». Thesis, Northumbria University, 2015. http://nrl.northumbria.ac.uk/34222/.
Texte intégralRésumé :
The selenisation of Cu2ZnSnS4 (CZTS) nanoparticle inks offers a potential low-cost route to the creation of Earth-abundant photovoltaic Cu2ZnSn(S,Se)4 (CZTSSe) thin film absorber layers. This work focuses on the properties of CZTS nanoparticles fabricated under different synthesis conditions, the selenisation kinetics and the performance of CZTSSe solar cell devices made using CZTS nanoparticle inks. Initially, CZTS nanoparticles were chemically synthesised via injection of sulphur into hot metallic precursors. Their composition, structural and optical properties were found to be sensitive to the reaction temperature, cooling rate and reaction time. For a reaction at 225 °C for 30 minutes followed by relatively slow cooling (~ 5 °C /min), it was possible to, facricate kesterite CZTS nanoparticles with an energy bandgap of 1.5 eV. CZTS nanoparticle inks have a strong effect on the performance of CZTSSe thin film solar cells. Specifically, longer reaction time of 60 minutes increased the device efficiency by increasing the concentration of acceptor levels to 5.3×1017 cm-3 in kesterite CZTSSe. Quenching the reaction rapidly (~ 20 °C/min) introduced wurtzite crystal structure and degraded the device efficiency from 5.4 % to 2.3 %. Increasing the reaction temperature to 255 °C resulted in the highest cell efficiency of 6.3 % despite the presence of secondary phase Cu2SnS3. In creating CZTSSe photovoltaic thin film absorber layers, high temperature selenisation of the CZTS nanoparticles plays a critical role in the formation of large grains. The results of a series of experiments indicate that the selenisation reaction is controlled by metal cation re-ordering and grain boundary migration (Avrami’s model), with a migration energy of 85.38 kJ/mol. Using a high selenium vapour pressure of 226 mbar during the selenisation process it was possible to achieve a device short circuit current density of 37.9 mA/cm2 resulting from increased carrier generation towards long wavelengths.
4
Isotta, Eleonora. « Nanostructured thermoelectric kesterite Cu2ZnSnS4 ». Doctoral thesis, Università degli studi di Trento, 2021. http://hdl.handle.net/11572/315174.
Texte intégralRésumé :
To support the growing global demand for energy, new sustainable solutions are needed both economically and environmentally. Thermoelectric waste heat recovery and energy harvesting could contribute by increasing industrial process efficiency, as well as powering stand-alone devices, microgenerators, and small body appliances.The structural complexity of quaternary chalcogenide materials provides an opportunity for engineering defects and disorder, to modify and possibly improve specific properties. Cu2ZnSnS4 (CZTS, often kesterite), valued for the abundance and non-toxicity of the raw materials, seems particularly suited to explore these possibilities, as it presents several structural defects and polymorphic phase transformations. The aim of this doctoral work is to systematically investigate the effects of structural polymorphism, disorder, and defects on the thermoelectric properties of CZTS, with particular emphasis to their physical origin. A remarkable case is the order-disorder transition of tetragonal CZTS, which is found responsible for a sharp enhancement in the Seebeck coefficient due to a flattening and degeneracy of the electronic energy bands. This effect, involving a randomization of Cu and Zn cations in certain crystallographic planes, is verified in bulk and thin film samples, and applications are proposed to exploit the reversible dependence of electronic properties on disorder. Low-temperature mechanical alloying is instead discovered stabilizing a novel polymorph of CZTS, which disordered cubic structure is studied in detail, and proposed deriving from sphalerite-ZnS. The total cation disorder in this compound provides an uncommon occurrence in thermoelectricity: a concurrent optimization of Seebeck coefficient, electrical and thermal conductivity. These findings, besides providing new and general understanding of CZTS, can cast light on profitable mechanisms to enhance the thermoelectric performance of semiconducting chalcogenides, as well as delineate alternative and fruitful applications.
5
Isotta, Eleonora. « Nanostructured thermoelectric kesterite Cu2ZnSnS4 ». Doctoral thesis, Università degli studi di Trento, 2021. http://hdl.handle.net/11572/315174.
Texte intégralRésumé :
To support the growing global demand for energy, new sustainable solutions are
needed both economically and environmentally. Thermoelectric waste heat recovery
and energy harvesting could contribute by increasing industrial process efficiency, as
well as powering stand-alone devices, microgenerators, and small body appliances.
The structural complexity of quaternary chalcogenide materials provides an
opportunity for engineering defects and disorder, to modify and possibly improve
specific properties. Cu2ZnSnS4 (CZTS, often kesterite), valued for the abundance and
non-toxicity of the raw materials, seems particularly suited to explore these
possibilities, as it presents several structural defects and polymorphic phase
transformations.
The aim of this doctoral work is to systematically investigate the effects of structural
polymorphism, disorder, and defects on the thermoelectric properties of CZTS, with
particular emphasis to their physical origin.
A remarkable case is the order-disorder transition of tetragonal CZTS, which is found
responsible for a sharp enhancement in the Seebeck coefficient due to a flattening and
degeneracy of the electronic energy bands. This effect, involving a randomization of
Cu and Zn cations in certain crystallographic planes, is verified in bulk and thin film
samples, and applications are proposed to exploit the reversible dependence of
electronic properties on disorder. Low-temperature mechanical alloying is instead
discovered stabilizing a novel polymorph of CZTS, which disordered cubic structure
is studied in detail, and proposed deriving from sphalerite-ZnS. The total cation
disorder in this compound provides an uncommon occurrence in thermoelectricity: a
concurrent optimization of Seebeck coefficient, electrical and thermal conductivity.
These findings, besides providing new and general understanding of CZTS, can cast
light on profitable mechanisms to enhance the thermoelectric performance of
semiconducting chalcogenides, as well as delineate alternative and fruitful applications.
6
Kattan, Nessrin. « Cu2ZnSnS4 nanoparticles : from structure to photovoltaic devices ». Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.702456.
Texte intégralRésumé :
The need to resolve the energy shortage and environmental pollution leads to improving and exploiting thin films for photovoltaic (PV) applications. The current promising PV technologies are CdTe and CuInGaSe2 (CIGS), which have achieved high efficiencies and already reached the commercialisation stage. However, the scarcity of elements like indium and tellurium has limited the deployment of these technologies on a terawatt scale. A search for alternative materials has become crucial to replace and overcome current technology limitations. Copper zinc tin sulfide (Cu2ZnSnS4 or CZTS) has attracted a lot of attention as a potential alternative light-absorbing material that consists of abundant elements, non-toxic and inexpensive. Furthermore, CZTS has a direct band gap of 1.4-1.6 eV and high light absorption coefficient of 104 cm-1, which favourably matches the solar spectrum. CZTS material's have reached efficiencies up to 12.6%, as prepared by a hydrazine-based solution method. The danger of this reaction due to hydrazine auto-ignition temperature of 24°C and flash point of 38 °C makes this method unreliable for large-scale production. However, the efficiency gap between CZTS and CIGS is still large, with a conversion efficiency of around >22% for CIGS solar cells. CZTS shows lower open-circuit voltage, Voc, lower short-circuit current density, Jsc, and smaller minority-carrier lifetimes. These deficiencies could be related to the formation of defects in nanocrystals that cause trapping or recombination of carriers. This thesis aims to study the structure and defects in CZTS nanocrystals using transmission electron microscopy (TEM)-based techniques. The hot-injection method was used to synthesize CZTS due to the ability to produce large-scale and high-quality nanocrystals. In addition, CZTS nanoparticles growth was investigated after deposition on Molybdenum on glass substrate, providing annealing conditions that significantly improved grain growth to be suitable for PV applications. A detailed analysis of the CZTS crystal structure was undertaken, confirming a kesterite (tetragonal) structure of annealed CZTS nanocrystals. Furthermore, a fingerprint map for CZTS was obtained using selected area electron diffraction (SAED) and convergent beam electron diffraction (CBED). These techniques provide an approach enabling to distinguish CZTS from secondary phases such as ZnS that have a negative impact on the solar cell performance. Bright-field and dark-field were used to visualize the extended defects exhibited in nanocrystals. Nanocrystals showed that growth of defects in the form of lamellar twinning and dislocations occurred in the {112} planes, which are the preferential growth direction of annealed CZTS. The presence of these defects results in a local change to hexagonal phases in lamellar twinning boundaries. Moreover, high-angle annular dark field (HAADF) imaging was used to obtain high-resolution images of CZTS nanocrystals at a sub-O.l nm resolution that visualized the CZTS crystal unit cell, showing for the first time all atoms of Cu, Zn, Sn, and S are presented. These images allow to investigate the formation of antisite defects that have a significant impact on CZTS performance. These defects formed antisite domain boundaries that lie in different planes, causing disorder on the Cu, Zn, or Sn sites with some of the boundaries affecting local changes in stoichiometry. These studies can provide key information on the defects occurring at the atomic scale that have important consequences on CZTS devices' performance. The growth of nanocrystals 'on molybdenum substrates was also investigated to improve the grain size and the electronic properties of the material. An annealing condition is established that achieved a significant improvement in nanocrystals grain size from the initial average size of as-grown nanoparticles of ~7-12 nm up to 1 μm grain size. Annealing under hydrogen atmosphere with additional to SnS and S in a powder form was used to improve the nanoparticles growth. In addition to present a comparison of nanoparticles growth under other annealing conditions including nitrogen atmospheres and additional elements and binaries such as Na2S, SnS and S. The presence of hydrogen demonstrated an annealing atmosphere produces a significant improvement in nanocrystals growth compared with other annealing atmospheres. A promising efficiency is achieved for the CZTS solar cell of (0.8 %), Voc (253 mV), Jsc (6.84 mA/cm2), fill factor (FF) (45.9%), Rs (44.9 Ώ cm2), and Rsh (169.7 Ώ cm2) with a cell configuration (glass/Molybdenum/CZTS/CdS/intrinsic-ZnO)/Aluminum doped ZnO (AZO)/NiAl).
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Flammersberger, Hendrik. « Experimental study of Cu2ZnSnS4 thin films for solar cells ». Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-139198.
Texte intégralRésumé :
Cu2ZnSnS4 (CZTS) is a semiconductor with a direct band gap of about 1,5 eV and anabsorption coefficient of 10^4 cm^-1, and is for this reason a potential thin film solarcell material. Demonstrated efficiencies of up to 6,8% as well as use of cheap andabundant elements make CZTS a promising alternative to current solar cells.The aim of this study was to fabricate and characterize CZTS films and to evaluatetheir performance in complete solar cells. For the fabrication of CZTS we applied atwo-step process consisting of co-sputtering of the metal or metal-sulphurprecursors, and subsequent sulphurization by heating at 520°C in sulphur atmosphereusing sealed quartz ampoules.The work included a systematic comparison of the influence of composition on qualityand efficiency of CZTS solar cells. For this purpose films with various metallic ratioswere produced. The results show that the composition has a major impact on theefficiency of the solar cells in these experiments. Especially zinc-rich, copper-poor andtin-rich films proved to be suitable for good cells. The worst results were received forzinc-poor films. An increase in efficiency with zinc content has been reportedpreviously and was confirmed in this study. This can be explained by segregation ofdifferent secondary phases for off-stochiometric compositions. According to thephase diagram, zinc-poor films segregate mainly copper sulfide and copper tin sulfidecompounds which are conductive and therefore detrimental for the solar cell. Zincsulfide, that is supposed to be present in the other regions of the phase diagramexamined in this study, could be comparatively harmless as this secondary phase isonly isolating and by this ’just’ reduces the active area. This is less disadvantageousthan the shunting that can be caused by copper sulfides. Contrary to the efficiencyresults, metal composition had no major impact on the morphology.A comparison of the composition before and after the sulphurization revealed thatmetal precursors showed higher tin losses than sulphur containing precursors. Apossible explanations for this was given.Another central point of this work was the examination of the influence of sulphur inthe precursor. Less need of additional sulphur in the film might lead to better materialquality. This is based on the assumption that the film is subjected to less diffusion ofthe elements and so to less dramatic changes within the film, which might result infewer voids and defects. However, our experiments could find only a weak trend thatsulphur in the precursor increases the performance of the solar cells; concerningmorphology it was observed that more compact films with smaller grains developfrom metal-sulphur-precursors.The best efficiency measured within this work was 3,2%.
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Bais, Pierre. « Investigation cristallochimique avancée des composés photovoltaïques dérivés de Cu2ZnSnS4 ». Thesis, Nantes, 2017. http://www.theses.fr/2017NANT4046/document.
Texte intégralRésumé :
Dans le domaine des cellules solaires de type couches minces, les composés dérivés de Cu2ZnSnS4 (CZTS) suscitent un intérêt croissant au fil des années. Grâce à un composé CZTS pauvre en Cu et pour lequel une partie du sélénium est substituée par du soufre, le rendement photovoltaïque maximal obtenu est de 12.6%. Plusieurs études suggèrent que des défauts de type Cu/Zn produisent un changement de la structure cristallographique la faisant passer de kësterite (groupe d’espace I4) à kësterite désordonnée (groupe d’espace I42m). Le désordre Cu/Zn ainsi que la distribution S/Se peuvent agir sur les performances des cellules solaires. L'objectif de cette thèse est l'étude approfondie de la structure des composés Cu2ZnSn(S,Se)4 (CZTSSe). Les échantillons étudiés ont été synthétisés par voie céramique et ont été caractérisés par les différentes techniques disponibles au laboratoire ainsi que par diffraction haute résolution et diffraction anomale sur monocristal au synchrotron SOLEIL. La combinaison de la diffraction des rayons-X, l’analyse élémentaire par dispersion d’énergie et la spectroscopie RMN ont permis d’en apprendre plus sur la structure et l’agencement des atomes en fonction du rapport S/(S+Se) ou de l’écart à la stoechiométrie CZTSSe. Les résultats principaux sont les suivants : les composés forment une solution solide de CZTSe à CZTS décrite dans la structure kësterite. De plus, bien qu’il soit possible d’observer des différences d’ordre à l’échelle locale, à longue distance, les anions et les atomes de cuivre et de zinc sont distribués aléatoirement, quelque soit le traitement thermique subi par l’échantillon ou l’écart à la stoechiométrieCu2ZnSnS4-derived compounds (CZTS) show an increasing interest in the field of low-cost thin film solar cells. The best solar energy conversion efficiencies of CZTS-based devices, up to 12.6%, are obtained for both copper-poor and mixed S/Se compounds. Several studies suggest that Cu/Zn antisite defects can occur, leading to the modification of the kësterite structure (space group I4) to the so-called disordered kesterite which is of higher symmetry (space group I42m). In the mixed S/Se compounds, the question of the cationic and anionic disorder is of high importance for solar cells efficiency and as not been already addressed through a crystal structure point of view. This study is dealing with a thorough chemical crystallographic investigation of Cu2ZnSn(S,Se)4 compounds. The studied compounds have been synthesized via a ceramic route and have been characterized by the use of different techniques available in the laboratory and also with the use of the high resolution powder diffraction as well as the anomalous single crystal diffraction at the Synchrotron SOLEIL. Thanks to the combination of X-ray diffraction, energy dispersive X-ray spectroscopy and NMR spectroscopy, transmission electronic microscopy, precise information about the structure and the microstructure as a function of S/(S+Se) ratio or the actual deviation from the 2:1:1:4 stoichiometry is provided. The existence of a full solid solution between CZTSe and CZTS with the full disordered kesterite structure is definitely demonstrated. However, at the local scale, there is a difference of order between compounds according to the cooling or to the stoichiometric deviation
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Teixeira, Jennifer Cláudia Passos. « Influência de parâmetros de crescimento nas propriedades de Cu2ZnSnS4 ». Master's thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/10131.
Texte intégralRésumé :
Mestrado em Engenharia FísicaNeste trabalho estudam-se filmes finos de Cu2ZnSnS4 (CZTS) no sentido de avaliar a influência dos parâmetros de crescimento na morfologia e nas propriedades estruturais e óticas destes filmes de forma a otimizar a sua utilização como camada absorvente em células solares. O número de períodos de precursores metálicos foi variado (1, 2, 4) e a sulfurização foi realizada em caixa de grafite ou em fluxo de enxofre. Os estudos realizados consistiram em análises morfológica, estrutural e ótica com base nas técnicas de SEM, EDS, XRD, espetroscopia de Raman e fotoluminescência. Verificou-se que as amostras sulfurizadas em fluxo de enxofre apresentavam um tamanho de grão médio superior ao observado para as amostras sulfurizadas em caixa de grafite. Adicionalmente, para este último conjunto de amostras, a intensidade da luminescência medida é claramente inferior à obtida para as amostras sulfurizadas em fluxo de enxofre. Por outro lado, o incremento do número de períodos de precursores revelou-se vantajoso tanto do ponto de vista do tamanho de grão como do incremento da razão sinal/ruído da luminescência. A análise estrutural permitiu verificar que a fase de CZTS é dominante em todas as amostras estudadas. Para a amostra com quatro períodos e sulfurizada em fluxo de enxofre, as dependências na potência de excitação e na temperatura permitiram estabelecer um modelo de transições radiativas entre um eletrão na banda de condução e um buraco ligado a um nível aceitador sob a influência de flutuações de potencial na banda de valência. A profundidade das flutuações de potencial na banda de valência foi avaliada, obtendo-se o valor de 104,7 0,4 meV. Foi estimada uma energia de ionização do nível aceitador de 78 3 meV e um valor para a energia de hiato do CZTS a 17 K na gama 1,467-1,507 eV. Os mecanismos de desexcitação não radiativa foram investigados tendo-se estabelecido dois canais envolvendo, um nível discreto ou uma banda. Os resultados deste trabalho revelaram-se importantes no processo de otimização das técnicas de crescimento em filmes finos de CZTS.
In this work we study Cu2ZnSnS4 (CZTS) thin films in order to evaluate the influence of the growth parameters on their morphology and structural and optical properties to optimize the application as absorbent layer in solar cells. The number of periods of metallic precursors was changed (1, 2, 4) and the sulphurization was done in a graphite box or under sulphur flux. The studies consisted of morphological, structural and optical analysis based on SEM, EDS, XRD, Raman spectroscopy and photoluminescence. It was found that the samples sulphurized in sulphur flux had an average grain size higher than that observed for the samples sulphurized in the graphite box. Additionally, the luminescence intensity for the last set of samples is clearly lower than the observed for the samples sulphurized in sulphur flux. Moreover, the increment in the number of periods of metallic precursors proved advantageous both from the viewpoint of grain size as the increase of signal/noise ratio of the luminescence. Structural analysis showed that the CZTS phase is dominant in all studied samples. For the sample with four periods and sulphurized on sulphur flux, the dependences of the emission on the excitation power and temperature allowed to establish a model of radiative recombination between an electron in the conduction band and a hole bound to an acceptor level under the influence of potential fluctuations of the valence band. The depth of the potential fluctuations in the valence band was evaluated, obtaining the value of 104,7 0,4 meV. An ionization energy for the acceptor level of 78 3 meV and a band gap at 17 K in the range 1,467-1,507 eV, were estimated. Two nonradiative channels involving, a discrete level or a band, were established. The results of this study have proved relevant in the optimization process of the growth of CZTS thin films.
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Fernandes, Paulo Alexandre Franco Ponte. « Células solares de Cu2ZnSnS4 por sulfurização de camadas metálicas ». Doctoral thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/9755.
Texte intégralRésumé :
Doutoramento em FísicaAs energias renováveis têm estado em destaque desde o fi nal do século XX. São vários os motivos para que isto esteja a acontecer. As previsões apontam para problemas de depleção das reservas de combustíveis fósseis, nomeadamente o petróleo e gás natural, durante o presente século. O carvão, ainda abundante, apresenta problemas ambientais signi cativos. Os perigos associados à energia nuclear estão fazer com que os governos de vários países repensem as suas políticas energéticas . Todas estas tecnologias têm fortes impactos ambientais. Considerando o conjunto das energias renováveis, a energia solar fotovoltaica tem ainda um peso menor no panorama da produção energética actual. A explicação para este facto deve-se ao custo, ainda elevado, dos sistemas fotovoltaicos. Várias iniciativas governamentais estão em curso, a SET for 2020 (UE) e a Sunshot (EUA), para o desenvolvimento de tecnologias que façam frente a este problema. A fatia de mercado que a tecnologia de filmes fi nos representa ainda é pequena, mas tem vindo a aumentar nos últimos anos. As vantagens relativamente à tecnologia tradicional baseada em Si são várias, como por ex. os custos energéticos e materiais para a fabricação das células. Esta dissertação apresenta um processo de fabricação de células solares em fi lmes finos usando como camada absorvente um novo composto semicondutor, o Cu2ZnSnS4, que apresenta como grande argumento, relativamente aos seus predecessores, o facto de ser constituído por elementos abundantes e de toxicidade reduzidas. Foi realizado um estudo sobre as condições termodinâmicas de crescimento deste composto, bem como a sua caracterização e das células solares finais. Este trabalho inclui um estudo dos compostos ternários, CuxSnSx+1 e compostos binários SnxSy, justi cado pelo facto de surgirem como fases secundárias no crescimento do Cu2ZnSnS4. Em seguida são descritos resumidamente os vários capítulos que constituem esta tese. No capítulo 1 é abordada de forma resumida a motivação e o enquadramento da tecnologia no panorama energético global. A estrutura da célula solar adoptada neste trabalho é também descrita. O capítulo 2 é reservado para uma descrição mais detalhada do composto Cu2ZnSnS4, nomeadamente as propriedades estruturais e opto-electrónicas. Estas últimas são usadas para explicar as composições não estequiométricas aplicadas no crescimento deste composto. São também descritas as várias técnicas de crescimento apresentadas na literatura. A última secção deste capítulo apresenta os resultados da caracterização publicados pelos vários grupos que estudam este composto. O método que foi implementado para crescer a camada absorvente, bem como os efeitos que a variação dos vários parâmetros têm neste processo são abordados no capítulo 3. Neste é também incluída uma descrição detalhada dos equipamentos usados na caraterização da camada absorvente e das células solares finais. As fases calcogêneas binária e ternárias são estudadas no capítulo 4. É apresentada uma descrição do método de crescimento, quer para as fases do tipo CuxSnSx+1, quer para as fases do tipo SnxSy e a sua caracterização básica, nomeadamente a sua composição e as propriedades estruturais, ópticas e eléctricas. No caso dos compostos binários são também apresentados os resultados de uma célula solar. No capítulo 5 são reportados os resultados da caracterização dos fi lmes de Cu2ZnSnS4. Técnicas como a dispersão Raman, a fotoluminescência, a efi ciência quântica externa e a espectroscopia de admitância são usadas para analisar as propriedades quer da camada absorvente quer da célula solar. No capítulo 6 é apresentada uma conclusão geral do trabalho desenvolvido e são referidas sugestões para melhorar e complementar os estudos feitos.
Renewable energy sources have been highlighted since the late twentieth century. There are several reasons why this is happening. Forecasts point to problems of depletion of fossil fuels, particularly oil and natural gas during the present century. Coal, still abundant, has a signi cant environmental problem. The dangers associated with nuclear power are making the governments of several countries to rethink their energy policies. All these technologies have strong environmental impacts. Considering the total renewable energy, photovoltaic is still a small player in the panorama of current energy production. The explanation is due to the fact that the cost of photovoltaic systems is still high. Several government initiatives are underway, like for instance the SET for 2020 (EU) and Sunshot (USA), for the development of technologies that solve this problem. The share of thin film technology is still small, but has increased in recent years. The advantages over traditional technology based on Si are various, eg. lower energy and materials costs to manufacture the cells. This dissertation presents a fabrication process of thin fi lm solar cells using as absorber layer a new semiconductor compound, Cu2ZnSnS4, which shows as major advantage compared with their predecessors, the fact that it consists of abundant elements with low toxicity. It is also presented a study on the growth conditions as well as the characterization of the absorber layer and fi nal solar cells. This work also include a study of ternary compounds, CuxSnSx+1 and binary compounds, SnxSy, justi ed by the fact that these phases arise as secondary phases in the growth of Cu2ZnSnS4. Next, the various chapters of this thesis are described brie y. In Chapter 1 is discussed brie y the motivation and framework technology in the global energy scenario. The solar cell structure adopted in this work is also described. Chapter 2 is allocated to a more detailed description of the compound Cu2ZnSnS4, namely, the structural and opto-electronic properties. The last ones are used to explain the non-stoichiometric compositions applied in the compound growth. It is also described the various growth techniques presented in the literature. The last section of this chapter shows the experimental results published by several groups studying this compound. The method implemented to grow the absorber layer, and the variation effects of the growth parameters are discussed in chapter 3. It is also included a detailed description of equipment used in characterization the absorber layer and the fi nal solar cells. The binary and ternary chalcogenide phases are studied in Chapter 4. It is presented a description of the growth method, for phases of the type CuxSnSx+1 and SnxSy and their basic characterization, namely the elemental composition, structural, optical and electrical properties. In the case of binary compounds is also shown the results of a solar cell. In the chapter 5 is reported the characterization results of the fi lms of Cu2ZnSnS4. Techniques such as Raman scattering, photoluminescence, the external quantum e ficiency and admittance spectroscopy are used to analyze the properties of both the absorber layer and the solar cell. In the chapter 6 is presented a general conclusion of the work developed during the project and some suggestions are also referred in order to complete and complement some of the studies.
Chapitres de livres sur le sujet "Cu2ZnSnS4"
1
Chen, Shiyou. « Cu2ZnSnS4, Cu2ZnSnSe4, and Related Materials ». Dans Semiconductor Materials for Solar Photovoltaic Cells, 75–103. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-20331-7_3.
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Schorr, Susan. « Crystallographic Aspects of Cu2ZnSnS4(CZTS) ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 53–74. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch3.
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Wang, Hongxia, et John Bell. « Thin Film Solar Cells Based on Cu2ZnSnS4 Absorber ». Dans Engineering Asset Management and Infrastructure Sustainability, 1011–18. London : Springer London, 2012. http://dx.doi.org/10.1007/978-0-85729-493-7_78.
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Isotta, Eleonora, Binayak Mukherjee, Carlo Fanciulli, Nicola M. Pugno et Paolo Scardi. « Order Parameter from the Seebeck Coefficient in Thermoelectric Kesterite Cu2ZnSnS4 ». Dans TMS 2021 150th Annual Meeting & ; Exhibition Supplemental Proceedings, 527–39. Cham : Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65261-6_48.
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Daranfed, W., M. S. Aida, N. Attaf, J. Bougdira et H. Rinnert. « Synthesis and Characterization of Cu2ZnSnS4 Absorber Layers by Ultrasonic Spray Pyrolysis ». Dans Properties and Characterization of Modern Materials, 325–31. Singapore : Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1602-8_27.
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Yeh, Min Yen, Yu-Jheng Liao, Dong-Sing Wuu, Cheng-Liang Huang et Chyi-Da Yang. « Electro-Deposition of Cu2ZnSnS4 Solar Cell Materials on Mo/SLG Substrates ». Dans Springer Proceedings in Physics, 45–53. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03749-3_5.
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Sawant, Jitendra P., et Rohidas B. Kale. « Study on Spray-Deposited Cu2ZnSnS4 Thin Films : Deposition and Physical Properties ». Dans Advances in Energy Research, Vol. 1, 115–24. Singapore : Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2666-4_12.
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Jain, Shefali, et Shailesh Narain Sharma. « Compositional Optimization of Photovoltaic Grade Cu2ZnSnS4 (CZTS) Films Synthesized by Colloidal Route ». Dans Springer Proceedings in Physics, 331–38. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_45.
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Ghediya, Prashant R., et Tapas K. Chaudhuri. « Effect of Microstructure on Electrical Properties of Cu2ZnSnS4 Films Deposited from Inks ». Dans Springer Proceedings in Physics, 497–502. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_77.
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Scragg, Jonathan J. « Opto-Electronic Properties of Cu2ZnSnS4 Films : Influences of Growth Conditions and Precursor Composition ». Dans Copper Zinc Tin Sulfide Thin Films for Photovoltaics, 155–95. Berlin, Heidelberg : Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22919-0_5.
Texte intégralActes de conférences sur le sujet "Cu2ZnSnS4"
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Pogue, Elizabeth A., et Angus A. Rockett. « Phase stability of Cu2ZnSnS4-SnS2 interfaces : Cu2ZnSn3S8 ». Dans 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749638.
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Kakherskyi, Stanislav, Oleksandr Dobrozhan, Roman Pshenychnyi, Denys Kurbatov et Nadia Opanasyuk. « Cu2ZnSnS4, Cu2ZnSnSe4 Nanocrystals As Absorbers In 3rd Generation Solar Cells ». Dans 2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2020. http://dx.doi.org/10.1109/elnano50318.2020.9088772.
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Kakherskyi, Stanislav, Oleksandr Dobrozhan, Roman Pshenychnyi, Denys Kurbatov et Nadia Opanasyuk. « Cu2ZnSnS4, Cu2ZnSnSe4 Nanocrystals As Absorbers In 3rd Generation Solar Cells ». Dans 2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2020. http://dx.doi.org/10.1109/elnano50318.2020.9088910.
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Ikeda, S., W. Septina, Yixin Lin, A. Kyoraiseki, T. Harada et M. Matsumura. « Electrochemical synthesis of Cu2ZnSnS4 and Cu2ZnSnSe4 thin films for solar cells ». Dans 2013 International Renewable and Sustainable Energy Conference (IRSEC). IEEE, 2013. http://dx.doi.org/10.1109/irsec.2013.6529645.
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Taki, Shunya, Yuto Umejima, Aya Uruno, Xianfeng Zhang et Masakazu Kobayashi. « Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles ». Dans 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751466.
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Ross, N., S. Grini, L. Vines et C. Platzer-Bjorkman. « Mixed sulfur and selenium annealing study of compound-sputtered bilayer CU2ZnSnS4 / Cu2ZnSnSe4 precursors ». Dans 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366420.
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Gu, Xiuquan, Yinghuai Qiang, Yulong Zhao et Lei Zhu. « A comparable study on structural and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4 nanocrystallines ». Dans Advanced Optoelectronics for Energy and Environment. Washington, D.C. : OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asa3a.18.
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Nagaoka, Akira, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama et Koichi Kakimoto. « Electrical properties of Cu2ZnSnS4 single crystal ». Dans 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745011.
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Ross, N., J. Larsen, S. Grini, E. Sarhammar, L. Vines et C. Platzer-Bjorkman. « Cu2ZnSn(S, Se)4 solar cell absorbers from diffusion of selenium into annealed Cu2ZnSnS4 absorbers ». Dans 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749643.
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Sugimoto, Hiroki, Christopher Liao, Homare Hiroi, Noriyuki Sakai et Takuya Kato. « Lifetime improvement for high efficiency Cu2ZnSnS4 submodules ». Dans 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745135.
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