Articles de revues : « Controllo dV/dt »

1

Shihong Park et T. M. Jahns. « Flexible dv/dt and di/dt control method for insulated gate power switches ». IEEE Transactions on Industry Applications 39, n^o 3 (mai 2003) : 657–64. http://dx.doi.org/10.1109/tia.2003.810654.

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Makki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot et Julien Weckbrodt. « Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs ». Energies 14, n^o 13 (27 juin 2021) : 3866. http://dx.doi.org/10.3390/en14133866.

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Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode(CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occurrences intending to validate experimental tests. The correlation between stray capacitance and dv/dt immunity results after shielding insertion will be reported.

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Marzoughi, Alinaghi, Rolando Burgos et Dushan Boroyevich. « Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs ». IEEE Transactions on Industrial Electronics 66, n^o 4 (avril 2019) : 2488–98. http://dx.doi.org/10.1109/tie.2018.2842753.

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Schroedermeier, Andy, et Daniel C. Ludois. « Integration of Inductors, Capacitors, and Damping Into Bus Bars for Silicon Carbide Inverter dv/dt Filters ». IEEE Transactions on Industry Applications 55, n^o 5 (septembre 2019) : 5045–54. http://dx.doi.org/10.1109/tia.2019.2920596.

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Lee, Taeyeong, Hokyeong Kim, Nayoung Lee, Taehoon Chin, Hanyoung Bu et Younghoon Cho. « Performance evaluation of GaN FET-based matrix converters with dv/dt filters for variable frequency drive applications ». Journal of Power Electronics 20, n^o 3 (13 mars 2020) : 844–53. http://dx.doi.org/10.1007/s43236-020-00070-2.

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Stein, C. M. de O., H. L. Hey, J. R. Pinheiro, H. Pinheiro et H. A. Gründling. « A new ZCZVT commutation cell for PWM DC-AC converters ». Sba : Controle & ; Automação Sociedade Brasileira de Automatica 15, n^o 2 (juin 2004) : 162–71. http://dx.doi.org/10.1590/s0103-17592004000200005.

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This paper proposes a new auxiliary commutation cell for PWM inverters that allows the main switches to be turned on and off at zero voltage and zero current. The main switches zero current turn-on reduces the undesired effects of parasitic inductances related to the circuit layout. The main diodes reverse recovery losses are minimized since di/dt and dv/dt are controlled. The ZCZVT commutation cell is located out of the main power path of the converters and is activated only during switching transitions. Additionally, the auxiliary switches are turned on and off at ZCS and use the same ground signals of the upper main switches. The commutation losses are practically reduced to zero. Soft switching operation is guaranteed for full load range without changes in command strategy. The operation of the ZCZVT PWM full-bridge DC-AC Converter is analyzed and an auxiliary commutation cell design procedure based on the analysis is proposed. Experimental results are presented to demonstrate the feasibility of the proposed commutation cell.

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Williams, Matthew J., Nicholas K. Lee, Joseph A. Mylott, Nicole Mazzola, Adeel Ahmed et Vinay V. Abhyankar. « A Low-Cost, Rapidly Integrated Debubbler (RID) Module for Microfluidic Cell Culture Applications ». Micromachines 10, n^o 6 (30 mai 2019) : 360. http://dx.doi.org/10.3390/mi10060360.

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Microfluidic platforms use controlled fluid flows to provide physiologically relevant biochemical and biophysical cues to cultured cells in a well-defined and reproducible manner. Undisturbed flows are critical in these systems, and air bubbles entering microfluidic channels can lead to device delamination or cell damage. To prevent bubble entry into microfluidic channels, we report a low-cost, Rapidly Integrated Debubbler (RID) module that is simple to fabricate, inexpensive, and easily combined with existing experimental systems. We demonstrate successful removal of air bubbles spanning three orders of magnitude with a maximum removal rate (dV/dt)max = 1.5 mL min−1, at flow rates required to apply physiological wall shear stress (1–200 dyne cm−2) to mammalian cells cultured in microfluidic channels.

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Beye, Mamadou Lamine, Thilini Wickramasinghe, Jean François Mogniotte, Luong Viêt Phung, Nadir Idir, Hassan Maher et Bruno Allard. « Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off ». Electronics 10, n^o 2 (7 janvier 2021) : 106. http://dx.doi.org/10.3390/electronics10020106.

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The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.

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Lee, Gi-Young, Min-Shin Cho et Rae-Young Kim. « Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors ». Electronics 10, n^o 14 (18 juillet 2021) : 1722. http://dx.doi.org/10.3390/electronics10141722.

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With the development of wide-bandgap (WBG) power semiconductor technology, such as silicon carbide (SiC) and gallium nitride (GaN), the technology of power converters with high efficiency and high-power density is rapidly developing. However, due to the high rate-of-rise of voltage (dv/dt) and of current (di/dt), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. In this paper, we propose a power loop analysis method based on lumped parameter modeling of a power circuit board with a wide conduction area for WBG power semiconductors. The proposed analysis technique is modeled based on lumped parameters, so that power loops with various current paths can be analyzed; thus, the analysis is intuitive, easy to apply and realizes dynamic power loop analysis. Through the proposed analysis technique, it is possible to derive the effective parasitic inductance component for the main points in the power circuit board. The effectiveness of the lumped parameter model is verified through PSpice and Ansys Q3D simulation results.

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Collin, Ryan, Alex Yokochi et Annette von Jouanne. « Novel Characterization of Si- and SiC-Based PWM Inverter Bearing Currents Using Probability Density Functions ». Energies 15, n^o 9 (21 avril 2022) : 3043. http://dx.doi.org/10.3390/en15093043.

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The high frequency PWM voltage pulses from a two-level six-switch inverter produce a common-mode voltage in an electric machine’s windings, a fraction of which appears on the machine shaft due to electrostatic (capacitive) coupling. When the shaft voltage exceeds the dielectric strength of the bearing lubricating grease, electric discharge machining (EDM) electrostatic discharges occur within the bearing, which can lead to premature failure. According to pulsed dielectric theory, the breakdown voltage across a dielectric increases with an increase in voltage slew rate (dv/dt). Therefore, the faster voltage rise times of wide bandgap devices are expected to produce higher magnitude shaft voltages and EDM bearing currents. This paper presents circuit modeling of EDM currents and compares the shaft voltage and bearing current amplitudes of silicon- and silicon carbide-based PWM inverters through experimental measurements and a statistical analysis using probability density functions. The statistical analysis provides insights regarding the correlation between bearing failure and the number of damage causing discharges over time which is a key step in developing bearing lifetime prediction models.

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Wei, Shusheng, et Wusong Wen. « High-Frequency Oscillation of the Active-Bridge-Transformer-Based DC/DC Converter ». Energies 15, n^o 9 (2 mai 2022) : 3311. http://dx.doi.org/10.3390/en15093311.

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The dual-active-bridge converter (DAB) has attracted tremendous attention in recent years. However, its EMI issues, especially the high-frequency oscillation (HFO) induced by the dv/dt and parasitic elements of the transformer, are significant challenges. The multi-active-bridge converter (MAB) based on the multi-winding transformer also faces similar problems, which are even more complicated. This article investigates the HFO of active-bridge-transformer-based DC/DC converters including DAB and MAB. Firstly, the general HFO model is studied using the analysis of the AC equivalent circuit considering the asymmetrical parameters. Ignoring the AC resistance in the circuit, the high-order model of the voltage oscillation could be reduced to a second-order system. Based on the simplified model, the oscillation voltage generated by an active bridge is analyzed in the time domain. Then, a universal active voltage-oscillation-suppression method-selected harmonic-elimination phase-shift (SHE PS) modulation method is proposed. The impacts of the system parameters on the method are also revealed. The experimental results show the excellent performance of the proposed active suppression method, with voltage spike amplitude (VSA) reductions of 92.1% and 77.8% for the DAB and MAB prototypes, respectively.

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Wu, Zhixuan, Guorong Zhu, Qian Wang, Shengjie Yang, Jing V. Wang et Jianqiang Kang. « Study on Adaptive Cycle Life Extension Method of Li-Ion Battery Based on Differential Thermal Voltammetry Parameter Decoupling ». Energies 14, n^o 19 (30 septembre 2021) : 6239. http://dx.doi.org/10.3390/en14196239.

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Battery aging leads to reduction in a battery’s cycle life, which restricts the development of energy storage technology. At present, the state of health (SOH) assessment technology, which is used to indicate the battery cycle life, has been widely studied. This paper tries to find a way to adjust the battery management system adaptively in order to prolong the battery cycle life with the change of SOH. In this paper, an improved Galvanostatic Intermittent Titration Technique (GITT) method is proposed to decouple the terminal voltage into overpotential (induced by total internal resistance) and stoichiometric drift (caused by battery aging, indicated by OCV). Based on improved GITT, the open circuit voltage-temperature change (OCV-dT/dV) characteristics of SOH are described more accurately. With such an accurate description of SOH change, the adaptive method to change the discharge and charge cut-off voltage is obtained, whose application can prolong battery cycle life. Experiments verify that, in the middle of a battery’s life-cycle, the adaptive method to change the discharge and charge cut-off voltage can effectively improve the cycle life of the battery. This method can be applied during the period of preventive maintenance in battery storage systems.

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Mirza, Arshiah Yusuf, Ali Bazzi, Hiep Hoang Nguyen et Yang Cao. « Motor Stator Insulation Stress Due to Multilevel Inverter Voltage Output Levels and Power Quality ». Energies 15, n^o 11 (2 juin 2022) : 4091. http://dx.doi.org/10.3390/en15114091.

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Multilevel Inverters (MLIs) are widely sought after in medium-voltage applications like electric ships, electric aircraft, and renewable energy integration due to excellent advantages like lower device stress, better power quality, and modularity. However, non-sinusoidal excitations from MLIs pose a serious problem to motor-insulation and lead to their premature breakdown. This paper investigates stress in medium-voltage motor insulation when the stator winding is excited by 3-, 5-, and 7-level multilevel inverter output waveforms. The effect of firing angle on insulation stress is also studied for each of the multilevel inverters. Results show that in addition to the number of output voltage levels, PWM wave shape is a critical factor which affects the insulation stress. Both these factors work together to impact the insulation health. A strong correlation is shown between the increase in the voltage root mean square (RMS) value and increase in dielectric stress when ignoring the dv/dt impact for a fixed DC input voltage and operating frequency of the inverter. Similarly, the dielectric stress in the stator insulation increased with an increase in firing angle for each of the MLIs. This paper shows a potential that both the RMSs can be optimized to reduce the insulation stress and improve the power quality of MLIs in medium voltage drives.

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D’Amato, Davide, Jelena Loncarski, Vito Giuseppe Monopoli, Francesco Cupertino, Luigi Pio Di Noia et Andrea Del Pizzo. « Impact of PWM Voltage Waveforms in High-Speed Drives : A Survey on High-Frequency Motor Models and Partial Discharge Phenomenon ». Energies 15, n^o 4 (15 février 2022) : 1406. http://dx.doi.org/10.3390/en15041406.

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The insulation system’s dielectric of the electric motor is very often subjected to severe electrical stress generated by the high dv/dt seen at the machine’s terminals. The electrical stress and high reflected wave transient overvoltage are even more evident in case of high-speed machines fed by high-frequency (HF) converters featuring very fast wide-bandgap devices. They are promoting the occurrence of partial discharges and consequently accelerate ageing. As this is serious issue and the main cause of the drive failure, it is important to analyse and characterise the surges at the motor terminals. Several HF models of motors have been proposed in the literature for this purpose. This article presents a survey on HF motor models, which is crucial in understanding and studying the most critical parameter identification and overvoltage mitigation techniques. Moreover, it offers a comparison of the models’ main features as well as a comparison with the experimental voltage waveform at motor terminals. A general overview of the partial discharge (PD) phenomenon is also provided, as it is favoured by HF operation and together with HF motor modelling provides key insights to the insulation ageing issue. In particular, an analysis of the effects of PWM waveform affecting insulation is given, as well as useful methods for developing strategies for the inspection and maintenance of winding insulation.

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Alotaibi, Saud, Xiandong Ma et Ahmed Darwish. « Dual Isolated Multilevel Modular Inverter with Novel Switching and Voltage Stress Suppression ». Energies 15, n^o 14 (9 juillet 2022) : 5025. http://dx.doi.org/10.3390/en15145025.

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This paper presents an improved structure for the submodules (SMs) in the three-phase modular inverter (TPMI) based on a dual isolated SEPIC/CUK (DISC) converter for large-scale photovoltaic (LSPV) plants. The DISC SMs can offer several advantages, including increased efficiency, reduced passive elements, and galvanic isolation via compact-size high-frequency transformers. The SMs can also provide a wide range for the output voltage and draw continuous currents with low ripples from the input source. However, the high dv/dt value across the switches during hard switching can cause current oscillations and voltage spikes, which will impair the operation of complementary switches and affect the safety of the power devices. For this challenge, the DISC SM is improved by replacing the output switches with diodes and adding a bypassing switch. In comparison to the conventional DISC SM, the improved DISC SM reduces the switch’s voltage spikes; hence, it can increase the overall efficiency. Thus, the DISC SM’s will be able to suppress voltage spikes in the TPMI inverter and therefore the total reliability will be improved. The work will detail the analysis of the proposed system along with design guidelines. Additionally, the simulation and experimental results to validate the operation of proposed DISC SM are presented using MATLAB/SIMULINK as well as a scaled-down experimental prototype.

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Aboadla, Ezzidin Hassan, Sheroz Khan, Kushsairy Abdul Kadir, Zulkhairi Md Yusof, Mohamed Hadi Habaebi, Shabana Habib, Muhammad Islam, Mohammad Kamrul Hasan et Eklas Hossain. « Suppressing Voltage Spikes of MOSFET in H-Bridge Inverter Circuit ». Electronics 10, n^o 4 (5 février 2021) : 390. http://dx.doi.org/10.3390/electronics10040390.

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Power electronics devices are made from semiconductor switches such as thyristors, MOSFETs, and diodes, along with passive elements of inductors, capacitors, and resistors, and integrated circuits. They are heavily used in power processing for applications in computing, communication, medical electronics, appliance control, and as converters in high power DC and AC transmission in what is now called harmonized AC/DC networks. A converter’s operation is described as a periodic sequencing of different modes of operation corresponding to different topologies interfaced to filters made of passive elements. The performance of converters has improved considerably using high switching frequency, which leads to a significant improvement in a power converter’s performance. However, the high dv/dt through a fast-switching transient of the MOSFET is associated with parasitic components generating oscillations and voltage spikes having adverse effects on the operation of complementary switches, thereby affecting the safe operation of the power devices. In this paper, the MOSFET gate-driver circuit performance is improved to suppress the H-Bridge inverter’s voltage spikes. The proposed technique is a simple improvement to the gate driver based on the IR2112 driver (IC) by adding a capacitor to attenuate the effect of parasitic components and the freewheeling current, suppressing the negative voltage spikes. This paper’s main contribution is to improve the gate driver circuit’s capability for suppressing the voltage spikes in the H-Bridge inverter. The improved gate driver circuit is validated experimentally and is compared with the conventional gate driver. The experimental results show that the proposed technique can effectively suppress the MOSFET’s voltage spikes and oscillations.

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Musumeci, Salvatore, Fabio Mandrile, Vincenzo Barba et Marco Palma. « Low-Voltage GaN FETs in Motor Control Application ; Issues and Advantages : A Review ». Energies 14, n^o 19 (6 octobre 2021) : 6378. http://dx.doi.org/10.3390/en14196378.

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

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Yu, Siyuan, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He et Ye Li. « A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity ». IEEE Transactions on Industrial Electronics, 2022, 1. http://dx.doi.org/10.1109/tie.2022.3153808.

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Gao, Yuexin, Xiaowu Cai, Zhengsheng Han, Yun Tang, Liqiang Ding, Ruirui Xia, Mali Gao et Fazhan Zhao. « SOI radiation-hardened 300 V half-bridge date driver IC design with high dv/dt noise immunity ». Journal of Power Electronics, 5 décembre 2022. http://dx.doi.org/10.1007/s43236-022-00570-3.

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Lee, Jaehong, Junghyeon Roh, Sungmin Kim et Seung-Hwan Lee. « High dv/dt immunity, high insulation voltage, ultra-compact, inductive power supply for gate-drivers of wide-bandgap semiconductor switches ». Journal of Power Electronics, 25 avril 2022. http://dx.doi.org/10.1007/s43236-022-00433-x.

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Hota, Arpan, et Vivek Agarwal. « A New Three-Phase Inverter Topology for Reducing the dv/dt and peak-to-peak Value of Common Mode Voltage ». IEEE Transactions on Industrial Electronics, 2022, 1. http://dx.doi.org/10.1109/tie.2022.3140517.

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Ding, Yi, Yalin Wang, Hao Sun et Yi Yin. « High-Temperature Partial Discharge Characteristics of Power Module Packaging Insulation Under Square Pulse with High dV/dt Based on Down-Mixing Method ». IEEE Transactions on Industrial Electronics, 2022, 1–8. http://dx.doi.org/10.1109/tie.2022.3201276.

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Agarwal, Rachit, Hui Li, Zhehui Guo et Peter Cheetham. « The Effects of PWM with High dv/dt on Partial Discharge and Lifetime of Medium-Frequency Transformer for Medium-Voltage (MV) Solid State Transformer Applications ». IEEE Transactions on Industrial Electronics, 2022, 1. http://dx.doi.org/10.1109/tie.2022.3174243.

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