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Auteur : Grafiati

Publié le 7 septembre 2023

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1

Nitoi, Dan, Florin Samer, Constantin Gheorghe Opran et Constantin Petriceanu. « Finite Element Modelling of Thermal Behaviour of Solar Cells ». Materials Science Forum 957 (juin 2019) : 493–502. http://dx.doi.org/10.4028/www.scientific.net/msf.957.493.

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Engineering Science Based on Modelling and Simulation (M & S) is defined as the discipline that provides the scientific and mathematical basis for simulation of engineering systems. These systems range from microelectronic devices to automobiles, aircraft, and even oilfield and city infrastructure. In a word, M & S combines knowledge and techniques in the fields of traditional engineering - electrical, mechanical, civil, chemical, aerospace, nuclear, biomedical and materials science - with the knowledge and techniques of fields such as computer science, mathematics and physics, and social sciences. One of the problems that arise during solar cell operation is that of heating them because of permanent solar radiation. Since the layers of which they are made are very small and thick it is almost impossible to experimentally determine the temperature in each layer. In this sense, the finite element method comes and provides a very good prediction and gives results impossible to obtain by other methods. This article models and then simulates the thermal composition of two types of solar cells, one of them having an additional layer of silicon carbide that aims to lower the temperature in the lower layer, where the electronic components stick to degradable materials under the influence of heat.

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Blome, Mark, Kevin McPeak, Sven Burger, Frank Schmidt et David Norris. « Back-reflector design in thin-film silicon solar cells by rigorous 3D light propagation modeling ». COMPEL : The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, n^o 4 (1 juillet 2014) : 1282–95. http://dx.doi.org/10.1108/compel-12-2012-0367.

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Purpose – The purpose of this paper is to find an optimized thin-film amorphous silicon solar cell design by numerically optimizing the light trapping efficiency of a pyramid-structured back-reflector using a frequency-domain finite element Maxwell solver. For this purpose short circuit current densities and absorption spectra within the investigated solar cell model are systematically analyzed. Furthermore, the authors employ a topology simulation method to accurately predict the material layer interfaces within the investigated solar cell model. The method simulates the chemical vapor deposition (CVD) process that is typically used to fabricate thin-film solar cells by combining a ballistic transport and reaction model (BTRM) with a level-set method in an iterative approach. Predicted solar cell models are far more realistic compared to solar cell models created assuming conformal material growth. The purpose of the topology simulation method is to increase the accuracy of thin-film solar cell models in order to facilitate highly accurate simulation results in solar cell design optimizations. Design/methodology/approach – The authors perform numeric optimizations using a frequency domain finite element Maxwell solver. Topology simulations are carried out using a BTRM combined with a level-set method in an iterative fashion. Findings – The simulation results reveal that the employed pyramid structured back-reflectors effectively increase the light path in the absorber mainly by exciting photonic waveguide modes. In using the optimization approach, the authors have identified solar cell models with cell periodicities around 480 nm and pyramid base widths around 450 nm to yield the highest short circuit current densities. Compared to equivalent solar cell models with flat back-reflectors, computed short circuit current densities are significantly increased. Furthermore, the paper finds that the solar cell models computed using the topology simulation approach represent a far more realistic approximation to a real solar cell stack compared to solar cell models computed by a conformal material growth assumption. Research limitations/implications – So far in the topology simulation approach the authors assume CVD as the material deposition process for all material layers. However, during the fabrication process sputtering (i.e. physical vapor deposition) will be employed for the Al:ZnO and ITO layers. In the framework of this ongoing research project the authors will extend the topology simulation approach to take the different material deposition processes into account. The differences in predicted material interfaces will presumably be only minor compared to the results shown here and certainly be insignificant relative to the differences the authors observe for solar cell models computed assuming conformal material growth. Originality/value – The authors systematically investigate and optimize the light trapping efficiency of a pyramid nano-structured back-reflector using rigorous electromagnetic field computations with a 3D finite element Maxwell solver. To the authors’ knowledge such an investigation has not been carried out yet in the solar cell research literature. The topology simulation approach (to the best of the authors’ knowledge) has previously not been applied to the modelling of solar cells. Typically a conformal layer growth assumption is used instead.

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Tobbeche, S., et M. N. Kateb. « Two-Dimensional Modelling and Simulation of Crystalline Silicon n⁺pp⁺ Solar Cell ». Applied Mechanics and Materials 260-261 (décembre 2012) : 154–62. http://dx.doi.org/10.4028/www.scientific.net/amm.260-261.154.

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In this work, we present the simulation results of the technological parameters and the electrical characteristics of a crystalline silicon n+pp+ solar cell, using two-dimension (2D) software, namely TCAD Silvaco (Technology Computer Aided Design). TCAD Silvaco Athena is used to simulate various stages of the technology manufacturing, while TCAD Silvaco Atlas is used for the simulation of the electrical characteristics and the spectral response of the solar cell. The J-V characteristics and the external quantum efficiency (EQE) are simulated under AM 1.5 illumination. The conversion efficiency(η)of 16.06% is reached and the other characteristic parameters are simulated: the open circuit voltage (Voc) is of 0.63 V, the short circuit current density (Jsc) equals 30.54 mA/cm² and the form factor (FF) is of 0.83 for the n+pp+ solar cell with a silicon nitride antireflection layer (Si3N4). In order to highlight the importance of the back surface field (BSF), a comparison between two cells, one without BSF (structure n+p), the other with one BSF (structure n+pp+), was made. By creating a BSF on the rear face of the cell the short circuit current density increases from 28.55 to 30.54 mA/cm2, the open circuit voltage from 0.6 to 0.63 V and the conversion efficiency from 14.19 to 16.06%. A clear improvement of the spectral response is obtained in wavelengths ranging from 0.65 to 1.1 µm for the solar cell with BSF.

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Dobrzański, L. A., et A. Drygała. « Laser processing of multicrystalline silicon for texturization of solar cells ». Journal of Materials Processing Technology 191, n^o 1-3 (août 2007) : 228–31. http://dx.doi.org/10.1016/j.jmatprotec.2007.03.009.

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Ogbonnaya, Chukwuma, Chamil Abeykoon, Adel Nasser et Ali Turan. « Radiation-Thermodynamic Modelling and Simulating the Core of a Thermophotovoltaic System ». Energies 13, n^o 22 (23 novembre 2020) : 6157. http://dx.doi.org/10.3390/en13226157.

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Thermophotovoltaic (TPV) systems generate electricity without the limitations of radiation intermittency, which is the case in solar photovoltaic systems. As energy demands steadily increase, there is a need to improve the conversion dynamics of TPV systems. Consequently, this study proposes a novel radiation-thermodynamic model to gain insights into the thermodynamics of TPV systems. After validating the model, parametric studies were performed to study the dependence of power generation attributes on the radiator and PV cell temperatures. Our results indicated that a silicon-based photovoltaic (PV) module could produce a power density output, thermal losses, and maximum voltage of 115.68 W cm−2, 18.14 W cm−2, and 36 V, respectively, at a radiator and PV cell temperature of 1800 K and 300 K. Power density output increased when the radiator temperature increased; however, the open circuit voltage degraded when the temperature of the TPV cells increased. Overall, for an 80 W PV module, there was a potential for improving the power generation capacity by 45% if the TPV system operated at a radiator and PV cell temperature of 1800 K and 300 K, respectively. The thermal efficiency of the TPV system varied with the temperature of the PV cell and radiator.

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Gandı́a, J. J., J. Cárabe et M. T. Gutiérrez. « Influence of TCO dry etching on the properties of amorphous-silicon solar cells ». Journal of Materials Processing Technology 143-144 (décembre 2003) : 358–61. http://dx.doi.org/10.1016/s0924-0136(03)00456-4.

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Yang, Hong, He Wang, Xiandao Lei, Chuanke Chen et Dingyue Cao. « Interface modeling between the printed thick-film silver paste and emitter for crystalline silicon solar cells ». International Journal of Numerical Modelling : Electronic Networks, Devices and Fields 27, n^o 4 (16 août 2013) : 649–55. http://dx.doi.org/10.1002/jnm.1925.

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8

Peters, Marius, Ma Fajun, Guo Siyu, Bram Hoex, Benedikt Blaesi, Stefan Glunz, Armin Aberle et Joachim Luther. « Advanced Modelling of Silicon Wafer Solar Cells ». Japanese Journal of Applied Physics 51 (22 octobre 2012) : 10NA06. http://dx.doi.org/10.1143/jjap.51.10na06.

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Peters, Marius, Ma Fajun, Guo Siyu, Bram Hoex, Benedikt Blaesi, Stefan Glunz, Armin Aberle et Joachim Luther. « Advanced Modelling of Silicon Wafer Solar Cells ». Japanese Journal of Applied Physics 51, n^o 10S (1 octobre 2012) : 10NA06. http://dx.doi.org/10.7567/jjap.51.10na06.

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10

Dugas, J., et J. Oualid. « 3D-Modelling of polycrystalline silicon solar cells ». Revue de Physique Appliquée 22, n^o 7 (1987) : 677–85. http://dx.doi.org/10.1051/rphysap:01987002207067700.

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11

Zeman, M., O. Isabella, S. Solntsev et K. Jäger. « Modelling of thin-film silicon solar cells ». Solar Energy Materials and Solar Cells 119 (décembre 2013) : 94–111. http://dx.doi.org/10.1016/j.solmat.2013.05.037.

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Donolato, C. « Voronoi network modelling of multicrystalline silicon solar cells ». Semiconductor Science and Technology 15, n^o 1 (9 décembre 1999) : 15–23. http://dx.doi.org/10.1088/0268-1242/15/1/303.

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Roshi, Bhim Singh et Vivek Gupta. « Modelling and simulation of silicon solar cells using PC1D ». Materials Today : Proceedings 54 (2022) : 810–13. http://dx.doi.org/10.1016/j.matpr.2021.11.092.

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Teodoreanu, Ana-Maria, Felice Friedrich, Rainer Leihkauf, Christian Boit, Caspar Leendertz et Lars Korte. « 2D modelling of polycrystalline silicon thin film solar cells ». EPJ Photovoltaics 4 (2013) : 45104. http://dx.doi.org/10.1051/epjpv/2013017.

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15

Štulı́k, P., et J. Singh. « Optical modelling of tandem structure amorphous silicon solar cells ». Journal of Non-Crystalline Solids 231, n^o 1-2 (juillet 1998) : 120–24. http://dx.doi.org/10.1016/s0022-3093(98)00406-2.

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16

Hargreaves, Stuart, Lachlan E. Black, Di Yan et Andres Cuevas. « Modelling Silicon Solar Cells with up-to-date Material Parameters ». Energy Procedia 38 (2013) : 66–71. http://dx.doi.org/10.1016/j.egypro.2013.07.250.

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Ziani, N., et M. S. Belkaid. « Computer Modeling Zinc Oxide/Silicon Heterojunction Solar Cells ». Journal of Nano- and Electronic Physics 10, n^o 6 (2018) : 06002–1. http://dx.doi.org/10.21272/jnep.10(6).06002.

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Nasriddinov, S. S., et M. A. Mujdinova. « DIGITAL MODELLING OF OPTIMIZATION PROCESS OF ANTIREFLECTION COVERING FOR SILICON SOLAR CELLS ». National Association of Scientists 1, n^o 29(56) (14 juillet 2020) : 58–60. http://dx.doi.org/10.31618/nas.2413-5291.2020.1.56.236.

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Results of research of influence of single ne and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix “STGraphs”, developed by authors on a basis “C#9.0”. Spectral curve dependences of an indicator of absorption of light on a thickness of an antireflection covering and base silicon are resulted. Using of multilayered antireflection coverings aren’t sufficient for keeping of absorption level of light at small thickness of silicon. It is expedient to use surfaces texturing wich promote more effective lengthening of a beams way of in a thickness of silicon.

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Nasriddinov, S. S., et M. A. Mujdinova. « DIGITAL MODELLING OF OPTIMIZATION PROCESS OF ANTIREFLECTION COVERING FOR SILICON SOLAR CELLS ». SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, n^o 1 (28 février 2021) : 69–72. http://dx.doi.org/10.37681/2181-1652-019-x-2021-1-11.

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Results o f research o f influence o f single mono- and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix “STGraphs”, developed by authors on a basis “C#9.0”. Spectral curve dependences o f an indicator o f absorption o f light on a thickness o f an antireflection covering and base silicon are resulted. Using o f multilayered antireflection coverings aren’t sufficient for keeping o f absorption level o f light at small thickness o f silicon. It is expedient to use surfaces texturing wich promote more effective lengthening o f a beams way o f in a thickness o f silicon.

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Dugas, J. « Modelling of Thin Polycrystalline Silicon Solar Cells on Low Temperature Substrates ». Solid State Phenomena 51-52 (mai 1996) : 521–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.521.

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Altermatt, Pietro P., Ronald A. Sinton et Gernot Heiser. « Improvements in numerical modelling of highly injected crystalline silicon solar cells ». Solar Energy Materials and Solar Cells 65, n^o 1-4 (janvier 2001) : 149–55. http://dx.doi.org/10.1016/s0927-0248(00)00089-1.

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Müller, Thomas C. M., Bart E. Pieters, Thomas Kirchartz, Reinhard Carius et Uwe Rau. « Modelling of photo- and electroluminescence of hydrogenated microcrystalline silicon solar cells ». physica status solidi (c) 9, n^o 10-11 (11 septembre 2012) : 1963–67. http://dx.doi.org/10.1002/pssc.201200428.

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Dugas, J., et J. Oualid. « Modelling of base doping concentration influence in polycrystalline silicon solar cells ». Solar Cells 20, n^o 2 (mars 1987) : 145–54. http://dx.doi.org/10.1016/0379-6787(87)90038-x.

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Edmiston, S. A., A. B. Sproul, M. A. Green et S. R. Wenham. « Modelling of Thin-film Crystalline Silicon Parallel Multi-junction Solar Cells ». Progress in Photovoltaics : Research and Applications 3, n^o 5 (septembre 1995) : 333–50. http://dx.doi.org/10.1002/pip.4670030507.

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Cuevas, Andres, et Jason Tan. « Analytical and computer modelling of suns–Voc silicon solar cell characteristics ». Solar Energy Materials and Solar Cells 93, n^o 6-7 (juin 2009) : 958–60. http://dx.doi.org/10.1016/j.solmat.2008.11.041.

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Schubert, Martin C., Jonas Schön, Alireza Abdollahinia, Bernhard Michl, Wolfram Kwapil, Florian Schindler, Friedemann Heinz et al. « Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells ». Solid State Phenomena 205-206 (octobre 2013) : 110–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.110.

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This work presents recent advances in the characterisation of carrier recombination and impurities at Fraunhofer ISE. The role of iron contamination during crystallisation is analysed in more detail. Numerical simulations and comparisons to experimental data are presented which demonstrate the impact of iron from the crucible and crucible coating and show the in-diffusion of iron into the silicon melt as well as into the solid silicon during crystal cooling. Measurements of spatially resolved carrier lifetime and interstitial iron concentration on wafers after phosphorus diffusion gettering are used as input for cell efficiency modelling which reveals the specific and quantitative role of iron on cell parameters in multicrystalline silicon. A new photoluminescence based method is presented which quantitatively determines the interstitial iron concentration in finished solar cells. We finally present advances in defect characterisation with sub-micrometre resolution: We show recent progress in micro photoluminescence spectroscopy for the quantitative measurement of interstitial chromium with high spatial resolution. A further development of this setup will be discussed: By combining the principle of Light Beam Induced Current (LBIC) or voltage (LBIV) and the highly localized illumination, images of carrier recombination at local defects are presented which feature a, compared to EBIC, higher signal-to-noise ratio.

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Zhang, Shude, Yue Yao, Dangping Hu, Weifei Lian, Hongqiang Qian, Jiansheng Jie, Qingzhu Wei, Zhichun Ni, Xiaohong Zhang et Lingzhi Xie. « Application of Silicon Oxide on High Efficiency Monocrystalline Silicon PERC Solar Cells ». Energies 12, n^o 6 (26 mars 2019) : 1168. http://dx.doi.org/10.3390/en12061168.

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In the photovoltaic industry, an antireflection coating consisting of three SiNx layers with different refractive indexes is generally adopted to reduce the reflectance and raise the efficiency of monocrystalline silicon PERC (passivated emitter and rear cell) solar cells. However, for SiNx, a refractive index as low as about 1.40 cannot be achieved, which is the optimal value for the third layer of a triple-layer antireflection coating. Therefore, in this report the third layer is replaced by SiOx, which possesses a more appropriate refractive index of 1.46, it and can be easily integrated into the SiNx deposition process with the plasma-enhanced chemical vapor deposition (PECVD) method. Through simulation and analysis with SunSolve, three different thicknesses were selected to construct the SiOx third layer. The replacement of 15 nm SiNx with 30 nm SiOx as the third layer of antireflection coating can bring about an efficiency gain of 0.15%, which originates from the reflectance reduction and spectral response enhancement below about 550 nm wavelength. However, because the EVA encapsulation material of the solar module absorbs light in short wavelengths, the spectral response advantage of solar cells with 30 nm SiOx is partially covered up, resulting in a slightly lower cell-to-module (CTM) ratio and an output power gain of only 0.9 W for solar module.

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Kamath, R. S., et R. K. Kamat. « Modelling of Random Textured Tandem Silicon Solar Cells Characteristics : Decision Tree Approach ». Journal of Nano- and Electronic Physics 8, n^o 4(1) (2016) : 04021–1. http://dx.doi.org/10.21272/jnep.8(4(1)).04021.

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Farrokh-Baroughi, Mahdi, et Siva Sivoththaman. « Modelling of grain boundary effects in nanocrystalline/multicrystalline silicon heterojunction solar cells ». Semiconductor Science and Technology 21, n^o 7 (14 juin 2006) : 979–86. http://dx.doi.org/10.1088/0268-1242/21/7/026.

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Kowalczewski, Piotr, Lisa Redorici, Angelo Bozzola et Lucio Claudio Andreani. « Silicon solar cells reaching the efficiency limits : from simple to complex modelling ». Journal of Optics 18, n^o 5 (14 mars 2016) : 054001. http://dx.doi.org/10.1088/2040-8978/18/5/054001.

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Reynolds, S., et V. Smirnov. « Modelling of two-and four-terminal thin-film silicon tandem solar cells ». Journal of Physics : Conference Series 398 (10 décembre 2012) : 012006. http://dx.doi.org/10.1088/1742-6596/398/1/012006.

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Krč, J., M. Zeman, F. Smole et M. Topič. « Optical modelling of thin-film silicon solar cells deposited on textured substrates ». Thin Solid Films 451-452 (mars 2004) : 298–302. http://dx.doi.org/10.1016/j.tsf.2003.11.030.

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Guo, Siyu, Armin G. Aberle et Marius Peters. « Investigating Local Inhomogeneity Effects of Silicon Wafer Solar Cells by Circuit Modelling ». Energy Procedia 33 (2013) : 110–17. http://dx.doi.org/10.1016/j.egypro.2013.05.047.

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Perraki, V. « Modelling of recombination velocity and doping influence in epitaxial silicon solar cells ». Solar Energy Materials and Solar Cells 94, n^o 10 (octobre 2010) : 1597–603. http://dx.doi.org/10.1016/j.solmat.2010.04.078.

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Nawaz, Muhammad. « Computer analysis of thin-film amorphous silicon heterojunction solar cells ». Journal of Physics D : Applied Physics 44, n^o 14 (23 mars 2011) : 145105. http://dx.doi.org/10.1088/0022-3727/44/14/145105.

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López, Esther, Antonio Martí, Elisa Antolín et Antonio Luque. « On the Potential of Silicon Intermediate Band Solar Cells ». Energies 13, n^o 12 (12 juin 2020) : 3044. http://dx.doi.org/10.3390/en13123044.

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Intermediate band solar cells (IBSCs) have an efficiency limit of 63.2%, which is significantly higher than the 40.7% limit for conventional single gap solar cells. In order to achieve the maximum efficiency, the total bandgap of the cell should be in the range of ~2 eV. However, that fact does not prevent other cells based on different semiconductor bandgaps from benefiting from the presence of an intermediate band (IB) within their bandgap. Since silicon (1.12 eV bandgap) is the dominant material in solar cell technology, it is of interest to determine the limit efficiency of a silicon IBSC, because even a modest gain in efficiency could trigger a large commercial interest if the IB is implemented at low cost. In this work we study the limit efficiency of silicon-based IBSCs considering operating conditions that include the use of non-ideal photon casting between the optical transitions, different light intensities and Auger recombination. The results lead to the conclusion that a silicon IBSC, operating under the conventional model in which the sub-bandgaps add to the total silicon gap, provides an efficiency gain if operated in the medium-high concentration range. The performance of these devices is affected by Auger recombination only under extremely high concentrations.

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Aliev, R., J. Ziyoitdinov, J. Gulomov, M. Abduvohidov et B. Urmanov. « STUDYING THE INFLUENCE OF TEMPERATURE ON PHOTOELECTRIC PROCESSES IN SILICON SOLAR CELLS USING DIGITAL SIMULATION ». SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, n^o 2 (30 avril 2021) : 57–63. http://dx.doi.org/10.37681/2181-1652-019-x-2021-2-10.

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the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined

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Zambree, Aliah Syafiqah, Madhiyah Yahaya Bermakai et Mohd Zaki Mohd Yusoff. « Modelling and Optimization of A Light Trapping Scheme in A Silicon Solar Cell Using Silicon Nitride (SiNx) Anti-Reflective Coating ». Trends in Sciences 20, n^o 9 (31 mai 2023) : 5555. http://dx.doi.org/10.48048/tis.2023.5555.

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Solar cells system has been gaining remarkable attention in the photovoltaic (PV) industry in recent years. Therefore, many people used solar cells in their life. Hence, from time to time, many industries keep improve it to get the best of efficiency of the solar cell. In this work, it presents ray tracing of light trapping (LT) schemes in thin c-Si to enhance broadband light absorption within 300 - 1,200 nm wavelength region. For the ray tracing simulation, mono c-Si wafer with 100 μm thickness is investigated and solar spectrum (AM1.5G) at normal incidence is used. Random planar and upright pyramid front surface with silicon nitride (SiNx) anti-reflective coatings (ARC) with the difference thicknesses are the LT schemes being studies in this work. The broadband anti-reflective coating can effectively reduce the optical loss and improve the energy efficiency in the solar cells. The optical properties of the thin c-Si are analyzed with incremental LT schemes. Not only that, the current density also calculated from the absorption curve. Optical properties and current density were evaluated to find out the best thickness and refractive index of the silicon nitride (SiNx). The initial simulation results show that the solar cell current density is about 24.81 mA/cm2. A great Jmax enhancement in solar cell was achieved with utilizing the ARC thickness and type of front surface. Among the 6 proposed scheme, the scheme with upright pyramid front surface of 75 nm SiNx ARC thickness realized a good improvement in current density of 41.19 mA/cm2. This leads to Jmax enhancement of 66.02 % when compared to the reference c-Si. HIGHLIGHTS Solar cell energy conversion efficiencies for commercially available multicrystalline silicon solar cells are around 14 - 20 % which still insufficient Energy conversion efficiency of solar cell can be enhanced by adding the anti-reflective coating on the front layer of light trapping scheme SiNx as a single layer anti-reflective coating with a certain thickness shown a good behavior in reducing the light reflection hence, effectively absorbing more light into the scheme and leads to enhancing the energy conversion efficiency GRAPHICAL ABSTRACT

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Bouzidi, Abdellatif, Ahmed S. Bouazzi et Mosbah Amlouk. « Modelling, Simulation and Optimization of n-p-n-p Silicon Multilayer Solar Cells ». Open Journal of Microphysics 02, n^o 03 (2012) : 27–32. http://dx.doi.org/10.4236/ojm.2012.23004.

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LUQUE, A., et I. TOBIAS. « Modelling of the Potential of Epitaxial Solar Cells on Upgraded Metallurgical Grade Silicon ». International Journal of Solar Energy 6, n^o 2 (janvier 1988) : 105–18. http://dx.doi.org/10.1080/01425918808914223.

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Dugas, J. « Modelling of material properties influence on back junction thin polycrystalline silicon solar cells ». Solar Energy Materials and Solar Cells 43, n^o 2 (septembre 1996) : 193–202. http://dx.doi.org/10.1016/0927-0248(96)00003-7.

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Hsu, Chia-Hsun, Xiao-Ying Zhang, Ming Jie Zhao, Hai-Jun Lin, Wen-Zhang Zhu et Shui-Yang Lien. « Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer ». Crystals 9, n^o 8 (3 août 2019) : 402. http://dx.doi.org/10.3390/cryst9080402.

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Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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Fara, Laurentiu, Irinela Chilibon, Dan Craciunescu, Alexandru Diaconu et Silvian Fara. « Review : Heterojunction Tandem Solar Cells on Si-Based Metal Oxides ». Energies 16, n^o 7 (26 mars 2023) : 3033. http://dx.doi.org/10.3390/en16073033.

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PV technology offers a sustainable solution to the increased energy demand especially based on mono- and polycrystalline silicon solar cells. The most recent years have allowed the successful development of perovskite and tandem heterojunction Si-based solar cells with energy conversion efficiency over 28%. The metal oxide heterojunction tandem solar cells have a great potential application in the future photovoltaic field. Cu2O (band gap of 2.07 eV) and ZnO (band gap of 3.3 eV) are very good materials for solar cells and their features completely justify the high interest for the research of tandem heterojunction based on them. This review article analyzes high-efficiency silicon-based tandem heterojunction solar cells (HTSCs) with metal oxides. It is structured on six chapters dedicated to four main issues: (1) fabrication techniques and device architecture; (2) characterization of Cu2O and ZnO layers; (3) numerical modelling of Cu2O/ZnO HTSC; (4) stability and reliability approach. The device architecture establishes that the HTSC is constituted from two sub-cells: ZnO/Cu2O and c-Si. The four terminal tandem solar cells contribute to the increased current density and conversion efficiency. Cu2O and ZnO materials are defined as promising candidates for high-efficiency solar devices due to the morphological, structural, and optical characterization emphasized. Based on multiscale modelling of PV technology, the electrical and optical numerical modelling of the two sub-cells of HTSC are presented. At the same time, the thermal stability and reliability approach are essential and needed for an optimum operation of HTSC, concerning the cell lifetime and degradation degree. Further progress on flexible HTSC could determine that such advanced solar devices would become commercially sustainable in the near future.

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Hörantner, Maximilian T., et Henry J. Snaith. « Predicting and optimising the energy yield of perovskite-on-silicon tandem solar cells under real world conditions ». Energy & ; Environmental Science 10, n^o 9 (2017) : 1983–93. http://dx.doi.org/10.1039/c7ee01232b.

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Mutitu, James G., Shouyuan Shi, Allen Barnett et Dennis W. Prather. « Hybrid Dielectric-Metallic Back Reflector for Amorphous Silicon Solar Cells ». Energies 3, n^o 12 (10 décembre 2010) : 1914–33. http://dx.doi.org/10.3390/en3121914.

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Hao Hui-Ying, Kong Guang-Lin, Zeng Xiang-Bo, Xu Ying, Diao Hong-Wei et Liao Xian-Bo. « Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells ». Acta Physica Sinica 54, n^o 7 (2005) : 3370. http://dx.doi.org/10.7498/aps.54.3370.

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Sproul, A. B., M. A. Green et A. M. Robinson. « Computer-aided analysis of high efficiency laser-grooved silicon solar cells ». Solar Cells 28, n^o 3 (avril 1990) : 233–40. http://dx.doi.org/10.1016/0379-6787(90)90057-c.

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Kiyanitsyn, S. Y., et A. S. Gudovskih. « Computer simulations of solar cells based on silicon/boron phosphide selective contacts ». Journal of Physics : Conference Series 2086, n^o 1 (1 décembre 2021) : 012087. http://dx.doi.org/10.1088/1742-6596/2086/1/012087.

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Abstract Silicon solar cells with selective contacts based on boron phosphide (BP) demonstrate a high potential according to simulation. However, the influence of defects created at the BP/Si interface during BP deposition is a critical issue for solar cell performance. The computer simulations were performed to understand how the defects in the near-surface region and at the interface affect the photovoltaic properties. Calculations of the dependence of the characteristics of solar cells on parameters such as the density of interface states, the concentration of defects in the near-surface region, and its width were made.

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Moiz, Syed Abdul, A. N. M. Alahmadi et Abdulah Jeza Aljohani. « Design of Silicon Nanowire Array for PEDOT:PSS-Silicon Nanowire-Based Hybrid Solar Cell ». Energies 13, n^o 15 (24 juillet 2020) : 3797. http://dx.doi.org/10.3390/en13153797.

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Among various photovoltaic devices, the poly 3, 4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS) and silicon nanowire (SiNW)-based hybrid solar cell is getting momentum for the next generation solar cell. Although, the power-conversion efficiency of the PEDOT:PSS–SiNW hybrid solar cell has already been reported above 13% by many researchers, it is still at a primitive stage and requires comprehensive research and developments. When SiNWs interact with conjugate polymer PEDOT:PSS, the various aspects of SiNW array are required to optimize for high efficiency hybrid solar cell. Therefore, the designing of silicon nanowire (SiNW) array is a crucial aspect for an efficient PEDOT:PSS–SiNW hybrid solar cell, where PEDOT:PSS plays a role as a conductor with an transparent optical window just-like as metal-semiconductor Schottky solar cell. This short review mainly focuses on the current research trends for the general, electrical, optical and photovoltaic design issues associated with SiNW array for PEDOT:PSS–SiNW hybrid solar cells. The foremost features including the morphology, surface traps, doping of SiNW, which limit the efficiency of the PEDOT:PSS–SiNW hybrid solar cell, will be addressed and reviewed. Finally, the SiNW design issues for boosting up the fill-factor, short-circuit current and open-circuit voltage will be highlighted and discussed.

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Li, Yang, Zhongtian Li, Yuebin Zhao et Alison Lennon. « Modelling of Light Trapping in Acidic-Textured Multicrystalline Silicon Wafers ». International Journal of Photoenergy 2012 (2012) : 1–8. http://dx.doi.org/10.1155/2012/369101.

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Acidic texturing has been widely used to reduce the reflection losses for silicon solar cells fabricated on multicrystalline wafers, however, there are few available models which attempt to predict the reduced reflection after texturing based on the morphology of the textured surfaces. An optical model which simulates the light trapping and scattering effects of acidic-textured surfaces based on the surface morphology is presented. The developed model was experimentally verified by reflection measurements from multicrystalline silicon wafers textured using different etching conditions. The relationship between weighted average reflection and surface morphology is demonstrated with some of the trends being explained by simulating reflection in different wavelength regions. The developed model could be embedded into solar cell simulation tools or adapted to predict optical properties of diverse surface morphologies.

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