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Publié le 20 avril 2024

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1

Paul, Bipul C., Ryan Tu, Shinobu Fujita, Masaki Okajima, Thomas H. Lee et Yoshio Nishi. « An Analytical Compact Circuit Model for Nanowire FET ». IEEE Transactions on Electron Devices 54, n^o 7 (juillet 2007) : 1637–44. http://dx.doi.org/10.1109/ted.2007.899397.

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Banerjee, Ayan, M. K. Jasim et Anirudh Pradhan. « Analytical model of dark energy stars ». Modern Physics Letters A 35, n^o 10 (8 janvier 2020) : 2050071. http://dx.doi.org/10.1142/s0217732320500716.

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In this paper, we study the structure and stability of compact astrophysical objects which are ruled by the dark energy equation of state (EoS). The existence of dark energy is important for explaining the current accelerated expansion of the universe. Exact solutions to Einstein field equations (EFE) have been found by considering particularized metric potential, Finch and Skea ansatz. 1 The obtained solutions are relevant to the explanation of compact fluid sphere. Further, we have observed at the junction interface that the interior solution is matched with the Schwarzschild’s exterior vacuum solution. Based on that, we have noticed the obtained solutions are well in agreement with the observed maximum mass bound of [Formula: see text], namely, PSR J1416-2230, Vela X-1, 4U 1608-52, Her X-1 and PSR J1903+327, whose predictable masses and radii are not compatible with the standard neutron star models. Also, the stability of the stellar configuration has been discussed briefly, by considering the energy conditions, surface redshift, compactness, mass-radius relation in terms of the state parameter [Formula: see text]. Finally, we demonstrate that the features so obtained are physically acceptable and consistent with the observed/reported data.[Formula: see text] Thus, the present dark energy equation of state appears talented regarding the presence of several exotic astrophysical matters.

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Verma, Yogesh Kumar, Varun Mishra et Santosh Kumar Gupta. « A Physics-Based Analytical Model for MgZnO/ZnO HEMT ». Journal of Circuits, Systems and Computers 29, n^o 01 (26 mars 2019) : 2050009. http://dx.doi.org/10.1142/s0218126620500097.

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In this paper, a physics-based compact model is developed for novel MgZnO/ZnO high-electron-mobility transistor (HEMT). Poisson’s equation coupled with 1D Schrödinger equation is solved self-consistently in the triangular quantum well to derive an expression of two-dimensional electron gas (2DEG) density with respect to gate voltage at the heterointerface of barrier (MgZnO) and buffer (ZnO) layers. A compact mathematical framework has been devised further for the first time for ZnO-based HEMT to the best of our knowledge using the expression of 2DEG density to compute surface potential, gate charge, gate current, gate capacitance, current–voltage characteristics, output conductance, transconductance and cut-off frequency with respect to gate voltage and along with the drain–source output resistance [Formula: see text].

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Baskey, Lipi, Shyam Das et Farook Rahaman. « An analytical anisotropic compact stellar model of embedding class I ». Modern Physics Letters A 36, n^o 05 (20 janvier 2021) : 2150028. http://dx.doi.org/10.1142/s0217732321500280.

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A class of solutions of Einstein field equations satisfying Karmarkar embedding condition is presented which could describe static, spherical fluid configurations, and could serve as models for compact stars. The fluid under consideration has unequal principal stresses i.e. fluid is locally anisotropic. A certain physically motivated geometry of metric potential has been chosen and codependency of the metric potentials outlines the formation of the model. The exterior spacetime is assumed as described by the exterior Schwarzschild solution. The smooth matching of the interior to the exterior Schwarzschild spacetime metric across the boundary and the condition that radial pressure is zero across the boundary lead us to determine the model parameters. Physical requirements and stability analysis of the model demanded for a physically realistic star are satisfied. The developed model has been investigated graphically by exploring data from some of the known compact objects. The mass-radius (M-R) relationship that shows the maximum mass admissible for observed pulsars for a given surface density has also been investigated. Moreover, the physical profile of the moment of inertia (I) thus obtained from the solutions is confirmed by the Bejger–Haensel concept.

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Pavanello, Marcelo Antonio, Renan Trevisoli, Rodrigo Trevisoli Doria et Michelly de Souza. « Static and dynamic compact analytical model for junctionless nanowire transistors ». Journal of Physics : Condensed Matter 30, n^o 33 (25 juillet 2018) : 334002. http://dx.doi.org/10.1088/1361-648x/aad34f.

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6

Naeve, T., M. Hohenbild et P. Seegebrecht. « A new analytical compact model for two-dimensional finger photodiodes ». Solid-State Electronics 52, n^o 2 (février 2008) : 299–304. http://dx.doi.org/10.1016/j.sse.2007.09.008.

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7

Balaguer, M., B. Iñiguez et J. B. Roldán. « An analytical compact model for Schottky-barrier double gate MOSFETs ». Solid-State Electronics 64, n^o 1 (octobre 2011) : 78–84. http://dx.doi.org/10.1016/j.sse.2011.06.045.

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Mantelli, M. B. H., et M. M. Yovanovich. « Compact analytical model for overall thermal resistance of bolted joints ». International Journal of Heat and Mass Transfer 41, n^o 10 (mai 1998) : 1255–66. http://dx.doi.org/10.1016/s0017-9310(97)00204-4.

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9

Inokawa, H., et Y. Takahashi. « A compact analytical model for asymmetric single-electron tunneling transistors ». IEEE Transactions on Electron Devices 50, n^o 2 (février 2003) : 455–61. http://dx.doi.org/10.1109/ted.2002.808554.

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10

Jia, Yonghao, Yuehang Xu, Zhang Wen, Yunqiu Wu et Yongxin Guo. « Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs ». IEEE Transactions on Electron Devices 66, n^o 1 (janvier 2019) : 357–63. http://dx.doi.org/10.1109/ted.2018.2881255.

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11

Lobontiu, Nicolae, Morgan Moses, Jozef Hunter, Daniel Min et Mircea Gh Munteanu. « A Compact Three-Dimensional Two-Layer Flexible Hinge ». Machines 11, n^o 8 (11 août 2023) : 825. http://dx.doi.org/10.3390/machines11080825.

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The paper proposes a new three-dimensional flexible hinge formed of several serially linked straight- and circular-axis segments that are disposed of in two layers. The novel hinge configuration is capable of large displacements and can be implemented in precision-compliant mechanisms that need to cover large spatial workspaces. Based on simplified geometry, an analytical compliance model is formulated that connects the loads to the displacements at one end of the hinge. Finite element simulation and experimental prototype testing of actual-geometry hinge configurations confirm the analytical model predictions. A related compliance-based analytical model evaluates the maximum loads that can be applied to the hinge and the resulting displacements. The two small-deformation analytical models are subsequently utilized to investigate the relationship between geometric parameters and the hinge performance qualifiers.

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12

Rossello, J. L., et J. Segura. « An Analytical Charge-Based Compact Delay Model for Submicrometer CMOS Inverters ». IEEE Transactions on Circuits and Systems I : Regular Papers 51, n^o 7 (juillet 2004) : 1301–11. http://dx.doi.org/10.1109/tcsi.2004.830692.

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Zong, Zhiwei, Ling Li, Jin Jang, Nianduan Lu et Ming Liu. « Analytical surface-potential compact model for amorphous-IGZO thin-film transistors ». Journal of Applied Physics 117, n^o 21 (7 juin 2015) : 215705. http://dx.doi.org/10.1063/1.4922181.

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Ávila-Herrera, F., B. C. Paz, A. Cerdeira, M. Estrada et M. A. Pavanello. « Charge-based compact analytical model for triple-gate junctionless nanowire transistors ». Solid-State Electronics 122 (août 2016) : 23–31. http://dx.doi.org/10.1016/j.sse.2016.04.013.

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Bazigos, Antonios, Christopher L. Ayala, Montserrat Fernandez-Bolanos, Yu Pu, Daniel Grogg, Christoph Hagleitner, Sunil Rana, Tyson Tian Qin, Dinesh Pamunuwa et Adrian M. Ionescu. « Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches ». IEEE Transactions on Electron Devices 61, n^o 6 (juin 2014) : 2186–94. http://dx.doi.org/10.1109/ted.2014.2318199.

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Hao, Yang, Jing Li, Federico Bianchi, Peisen Zhang, Gastone Ciuti, Paolo Dario et Qiang Huang. « Analytical Magnetic Model Towards Compact Design of Magnetically-Driven Capsule Robots ». IEEE Transactions on Medical Robotics and Bionics 2, n^o 2 (mai 2020) : 188–95. http://dx.doi.org/10.1109/tmrb.2020.2989335.

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Lázaro, A., B. Nae, C. Muthupandian et B. Iñíguez. « High-frequency compact analytical noise model of gate-all-around MOSFETs ». Semiconductor Science and Technology 25, n^o 3 (5 février 2010) : 035015. http://dx.doi.org/10.1088/0268-1242/25/3/035015.

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18

Lin, Kuan-Chou, Wei-Wen Ding et Meng-Hsueh Chiang. « An Analytical Gate-All-Around MOSFET Model for Circuit Simulation ». Advances in Materials Science and Engineering 2015 (2015) : 1–5. http://dx.doi.org/10.1155/2015/320320.

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A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.

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19

Kumar, P. « A compact analytical material model for unconfined concrete under uni-axial compression ». Materials and Structures 37, n^o 273 (17 septembre 2004) : 585–90. http://dx.doi.org/10.1617/13974.

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20

Hyunsik Im, T. Inukai, H. Gomyo, T. Hiramoto et T. Sakurai. « VTCMOS characteristics and its optimum conditions predicted by a compact analytical model ». IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11, n^o 5 (octobre 2003) : 755–61. http://dx.doi.org/10.1109/tvlsi.2003.814320.

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21

Kumar, B. N., A. K. Singh, C. M. R. Prabhu, C. Venkataseshaiah et G. C. Sheng. « Compact Analytical Model for One Dimensional Carbon Nanotube Field Effect Transistor (CNTFET) ». ECS Solid State Letters 4, n^o 6 (9 avril 2015) : M12—M14. http://dx.doi.org/10.1149/2.0031506ssl.

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22

Hao, Guangbo, Xiuyun He et Shorya Awtar. « Design and analytical model of a compact flexure mechanism for translational motion ». Mechanism and Machine Theory 142 (décembre 2019) : 103593. http://dx.doi.org/10.1016/j.mechmachtheory.2019.103593.

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23

Chandra, S. Theodore, N. B. Balamurugan, G. Subalakshmi, T. Shalini et G. Lakshmi Priya. « Compact analytical model for single gate AlInSb/InSb high electron mobility transistors ». Journal of Semiconductors 35, n^o 11 (novembre 2014) : 114003. http://dx.doi.org/10.1088/1674-4926/35/11/114003.

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24

Inokawa, H., et Y. Takahasi. « Correction to "A compact analytical model for asymmetric single-electron tunneling transistors" ». IEEE Transactions on Electron Devices 50, n^o 3 (mars 2003) : 862. http://dx.doi.org/10.1109/ted.2003.814307.

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Kumar, P. « A compact analytical material model for unconfined concrete under uni-axial compression ». Materials and Structures 37, n^o 9 (novembre 2004) : 585–90. http://dx.doi.org/10.1007/bf02483287.

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Poiroux, T., O. Rozeau, P. Scheer, S. Martinie, M. A. Jaud, M. Minondo, A. Juge, J. C. Barbe et M. Vinet. « Leti-UTSOI2.1 : A Compact Model for UTBB-FDSOI Technologies—Part I : Interface Potentials Analytical Model ». IEEE Transactions on Electron Devices 62, n^o 9 (septembre 2015) : 2751–59. http://dx.doi.org/10.1109/ted.2015.2458339.

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27

Lu, Zhao Hui, Yan Gang Zhao et Zhi Wu Yu. « A Strength Model for Square CFT Stub Columns with Compact Sections ». Applied Mechanics and Materials 94-96 (septembre 2011) : 425–30. http://dx.doi.org/10.4028/www.scientific.net/amm.94-96.425.

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This paper presents an investigation of ultimate strength of square CFT stub columns with compact sections. The beneficial composite action between the steel tube and the filled concrete is taken into account and a new analytical model for predicting the axial capacity of square CFT stub columns with compact sections is proposed. Experimental results of 89 axially loaded square CFT stub columns published in the literature are then used to verify the proposed strength model. Results show that the proposed strength model provides a direct, compact, and efficient representation of the ultimate strength of square CFT stub columns made with not only normal strength but also with high strength steel tubes and concrete.

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Jones, Nicholas A., et Jason Clark. « Analytical Modeling and Simulation of S-Drive Piezoelectric Actuators ». Actuators 10, n^o 5 (25 avril 2021) : 87. http://dx.doi.org/10.3390/act10050087.

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This paper presents a structural geometry for increasing piezoelectric deformation, which is suitable for both micro- and macro-scale applications. New and versatile microstructure geometries for actuators can improve device performance, and piezoelectric designs benefit from a high-frequency response, power density, and efficiency, making them a viable choice for a variety of applications. Previous works have presented piezoelectric structures capable of this amplification, but few are well-suited to planar manufacturing. In addition to this manufacturing difficulty, a large number of designs cannot be chained into longer elements, preventing them from operating at the macro-scale. By optimizing for both modern manufacturing techniques and composability, this structure excels as an option for a variety of macro- and micro-applications. This paper presents an analytical compact model of a novel dual-bimorph piezoelectric structure, and shows that this compact model is within 2% of a computer-distributed element model. Furthermore it compares the actuator’s theoretical performance to that of a modern actuator, showing that this actuator trades mechanical efficiency for compactness and weight savings.

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Choi, Jae Hyouk, et Kenichi Ohi. « Analytical Evaluation of Plastic Resistance of Column Base Connection Using Convex Set Theory ». Key Engineering Materials 321-323 (octobre 2006) : 386–89. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.386.

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It is important to estimate the structural safety of column base connection by calculating exact collapse loads. Column bases connection transfer reactions from the structure the foundation. In this paper, a simple mechanical model to predict their plastic resistance is proposed. An efficient linear-programming technique, which is called as Compact Procedure, is applied to column base connection model including multi-spring elements, where a column base is replaced by a set of plastic axial and bending springs. In Compact Procedure, it is not necessary to know the whole interaction surface of resistances at a plastic portion. A simple analytical model of column base connection to calculate its load-carrying capacity considering bi-axial loading effect is presented. In addition, efficiency of the proposed model is examined by comparing it with the past test results.

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Palanichamy, Vimala, et N. B. Balamurugan. « Analytical modeling of quantization effects in surrounding-gate MOSFETs ». COMPEL : The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, n^o 1/2 (20 décembre 2013) : 630–44. http://dx.doi.org/10.1108/compel-03-2013-0101.

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Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages. Practical implications – Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures. Originality/value – This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).

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Avery, Philip, et Mahen Mahendran. « Analytical Benchmark Solutions for Steel Frame Structures Subject to Local Buckling Effects ». Advances in Structural Engineering 3, n^o 3 (juillet 2000) : 215–29. http://dx.doi.org/10.1260/1369433001502157.

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Application of “advanced analysis” methods suitable for non-linear analysis and design of steel frame structures permits direct and accurate determination of ultimate system strengths, without resort to simplified elastic methods of analysis and semi-empirical specification equations. However, the application of advanced analysis methods has previously been restricted to steel frames comprising only compact sections that are not influenced by the effects of local buckling. A research project has been conducted with the aim of developing concentrated plasticity methods suitable for practical advanced analysis of steel frame structures comprising non-compact sections. This paper contains a comprehensive set of analytical benchmark solutions for steel frames comprising non-compact sections, which can be used to verify the accuracy of simplified concentrated plasticity methods of advanced analysis. The analytical benchmark solutions were obtained using a distributed plasticity shell finite element model that explicitly accounts for the effects of gradual cross-sectional yielding, longitudinal spread of plasticity, initial geometric imperfections, residual stresses, and local buckling. A brief description and verification of the shell finite element model is provided in this paper.

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Seon, Kim, Kim et Jeon. « Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel ». Electronics 8, n^o 9 (4 septembre 2019) : 988. http://dx.doi.org/10.3390/electronics8090988.

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Poly-crystalline silicon channel transistors have been used as a display TFT for a long time and have recently been used in a 3D vertical NAND Flash which is a transistor with 2D plane NAND upright. In addition, multi-gate transistors such as FinFETs and a gate-all-around (GAA) structure has been used to suppress the short-channel effects for logic/analog and memory applications. Compact models for poly-crystalline silicon (poly-silicon) channel planar TFTs and single crystalline silicon channel GAA MOSFETs have been developed separately, however, there are few models consider these two physics at the same time. In this work, we derived new analytical current-voltage model for GAA transistor with poly-silicon channel by considering the cylindrical coordinates and the grain boundary effect. Based on the derived formula, the compact I-V model for various operating regions and threshold voltage was proposed for the first time. The proposed model was compared with the measured data and good agreements were observed.

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Guo, Jingrui, Ying Zhao, Guanhua Yang, Xichen Chuai, Wenhao Lu, Dongyang Liu, Qian Chen et al. « Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT ». IEEE Transactions on Electron Devices 68, n^o 4 (avril 2021) : 2049–55. http://dx.doi.org/10.1109/ted.2021.3054359.

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Ashouri, Mahyar, et Majid Bahrami. « Heat and mass transfer in laminar falling film absorption : A compact analytical model ». International Journal of Heat and Mass Transfer 188 (juin 2022) : 122598. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2022.122598.

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Darbandy, Ghader, François Lime, Antonio Cerdeira, Magali Estrada, Salvador Ivan Garduño et Benjamin Iñiguez. « Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model ». Solid-State Electronics 75 (septembre 2012) : 22–27. http://dx.doi.org/10.1016/j.sse.2012.05.006.

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Numata, Tatsuhiro, Shigeyasu Uno, Kazuo Nakazato, Yoshinari Kamakura et Nobuya Mori. « Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor ». Japanese Journal of Applied Physics 49, n^o 4 (20 avril 2010) : 04DN05. http://dx.doi.org/10.1143/jjap.49.04dn05.

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Estevez-Delgado, Joaquin, Gabino Estevez-Delgado, Noel Enrique Rodríguez Maya, José Martínez Peña et Modesto Pineda Duran. « An isotropic analytical model for charged stars ». Modern Physics Letters A 36, n^o 13 (29 mars 2021) : 2150089. http://dx.doi.org/10.1142/s0217732321500899.

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In this investigation report, we present a perfect charged fluid solution for a static and spherically symmetric spacetime; for its construction, we suppose a metric potential, [Formula: see text], and a specific form of the electric field’s intensity, [Formula: see text], in such a manner that the resulting stellar model is physically acceptable and stable. The model presented depends on two parameters [Formula: see text] related to the compactness and the magnitude of the electric field and these same parameters will generate different possibilities for the behavior of the speed of sound. For the particular case in which [Formula: see text], we obtain once more a chargeless model constructed previously, the compactness for the charged model case is greater than in the chargeless case. As an effect of the charge, the model admits two regions for the parameter [Formula: see text], in one of these the speed of sound is a monotonic decreasing function and in the other it is a monotonic increasing function. By means of a numerical analysis, it is shown that the orders of magnitude associated to the pressure and density are characteristic of the compact stars. In particular for [Formula: see text], the range of [Formula: see text], which implies that the radius of an object with mass [Formula: see text] is found between 6554.620 m and 7672.702 m with a maximum central density of [Formula: see text].

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Saqib, Muhammad, Shahid Hasnain, Abdul Khaliq, Uzair Ahmed, Nawal Odah Al-Atawi et Daoud Suleiman Mashat. « Novel 3D coupled convection–diffusion model algorithm ». AIP Advances 12, n^o 10 (1 octobre 2022) : 105324. http://dx.doi.org/10.1063/5.0112488.

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The potential of a partial differential equations model is to anticipate its computational behavior. The simulation of a transient 3D coupled convection–diffusion system using a numerical model is described. The main objective of this article is to offer effective limited contrast compact finite difference techniques for use with nonlinear coupled partial differential systems that mimic overseeing differential frameworks. The three-dimensional compact finite difference formulation serves as the model’s foundation. An analytical model has been used to validate finite difference techniques that are numerically compact. By examining the consistency and union of the arrangement, which may be seen from figures and information tables, we can evaluate the model and the suggested numerical schemes. The schemes are unconditionally stable and accurate up to two orders in time and six orders in space, according to the results of the stability and accuracy tests. The implicit method used in the algorithm’s design was examined for stability criteria. Because mesh-independent solutions for non-linear differential systems are expensive, block tridiagonal matrix structures, measured in terms of L2 and L∞ norms, which are inherent characteristics of schemes and have excellent agreement with the investigation arrangement, are created.

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Ahmad, Masniezam, Khairul Azwan Ismail, Fauziah Mat et William James Stronge. « Improved Model for Impact of Viscoplastic Bodies ». Key Engineering Materials 715 (septembre 2016) : 180–85. http://dx.doi.org/10.4028/www.scientific.net/kem.715.180.

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This study proposes an improved viscoplastic impact model that calculates impact response for direct impact between two compact bodies. The proposed model employs spring and viscous elements that represent the energy loss due to plastic deformation and stress wave propagation, respectively. The impact response is calculated by solving differential equations through analytical and numerical methods. This model can accurately predict impact response for low, moderate and high impact speeds.

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A Hamid, Fatimah K., N. Ezaila Alias, R. Ismail et M. Anas Razali. « Compact modeling of strained GAA SiNW ». Indonesian Journal of Electrical Engineering and Computer Science 14, n^o 1 (1 avril 2019) : 241. http://dx.doi.org/10.11591/ijeecs.v14.i1.pp241-249.

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<span>Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed to overcome the shortcomings in the analytical model. In this paper, a charge-based compact model is presented for long-channel strained Gate-All-Around Silicon Nanowire (GAA SiNW) from an undoped channel to a doped body. The model derivation is based on an inversion charge which has been solved explicitly using the smoothing function. The drain current model is formulated from Pao Sah’s dual integral which is formed in terms of inversion charge at the drain and source terminals. The proposed model has been extensively verified with the numerical simulator data. The strained effect on the electrical parameters are studied based on inversion charge, threshold voltage and current-voltage (I-V) characteristics. Results show that the current, the inversion charge and the threshold voltage can be greatly improved by the strain. The threshold voltage was reduced approximately 40% from the conventional GAA SiNW. Moreover, the inversion charge was improved by 30 % and the on-state current has doubled compared to unstrained device.</span>

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Chen, J. S., C. P. Liang, C. W. Liu et L. Y. Li. « A parsimonious analytical model for simulating multispecies plume migration ». Hydrology and Earth System Sciences Discussions 12, n^o 9 (1 septembre 2015) : 8675–726. http://dx.doi.org/10.5194/hessd-12-8675-2015.

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Abstract. A parsimonious analytical model for rapidly predicting the long-term plume behavior of decaying contaminant such as radionuclide and dissolved chlorinated solvent is presented in this study. Generalized analytical solutions in compact format are derived for the two-dimensional advection-dispersion equations coupled with sequential first-order decay reactions involving an arbitrary number of species in groundwater system. The solution techniques involve the sequential applications of the Laplace, finite Fourier cosine, and generalized integral transforms to reduce the coupled partial differential equation system to a set of linear algebraic equations. The system of algebraic equations is next solved for each species in the transformed domain, and the solutions in the original domain are then obtained through consecutive integral transform inversions. Explicit form solutions for a special case are derived using the generalized analytical solutions and are verified against the numerical solutions. The analytical results indicate that the parsimonious analytical solutions are robust and accurate. The solutions are useful for serving as simulation or screening tools for assessing plume behaviors of decaying contaminants including the radionuclides and dissolved chlorinated solvents in groundwater systems.

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Botas, J. D., et H. Águas. « The Stiffness of Syntactic Metal-Matrix Composites : A Statistical Model ». ISRN Ceramics 2011 (6 février 2011) : 1–9. http://dx.doi.org/10.5402/2011/510474.

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Stiffness estimates of unloaded isotropic particulates are made by a new analytical model, when reinforcements are either compact or hollow spheres. A statistical extension of this model is described when stiffness predictions involve loading of syntactic composites. A simple experimental routine is also proposed for monitoring the microballoons fracture upon brittle syntactic metal-matrix composites tensile loading.

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Mavredakis, Nikolaos, Ramon Garcia Cortadella, Xavi Illa, Nathan Schaefer, Andrea Bonaccini Calia, Anton-Guimerà-Brunet, Jose A. Garrido et David Jiménez. « Bias dependent variability of low-frequency noise in single-layer graphene FETs ». Nanoscale Advances 2, n^o 11 (2020) : 5450–60. http://dx.doi.org/10.1039/d0na00632g.

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Chen, Jui-Sheng, Ching-Ping Liang, Chen-Wuing Liu et Loretta Y. Li. « An analytical model for simulating two-dimensional multispecies plume migration ». Hydrology and Earth System Sciences 20, n^o 2 (18 février 2016) : 733–53. http://dx.doi.org/10.5194/hess-20-733-2016.

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Abstract. The two-dimensional advection-dispersion equations coupled with sequential first-order decay reactions involving arbitrary number of species in groundwater system is considered to predict the two-dimensional plume behavior of decaying contaminant such as radionuclide and dissolved chlorinated solvent. Generalized analytical solutions in compact format are derived through the sequential application of the Laplace, finite Fourier cosine, and generalized integral transform to reduce the coupled partial differential equation system to a set of linear algebraic equations. The system of algebraic equations is next solved for each species in the transformed domain, and the solutions in the original domain are then obtained through consecutive integral transform inversions. Explicit form solutions for a special case are derived using the generalized analytical solutions and are compared with the numerical solutions. The analytical results indicate that the analytical solutions are robust, accurate and useful for simulation or screening tools to assess plume behaviors of decaying contaminants.

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Huet, Maxime, et Alexis Giauque. « A nonlinear model for indirect combustion noise through a compact nozzle ». Journal of Fluid Mechanics 733 (23 septembre 2013) : 268–301. http://dx.doi.org/10.1017/jfm.2013.442.

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AbstractThe present paper deals with the generation of sound by the passage of acoustic or entropy perturbations through a nozzle in the nonlinear regime and in the low-frequency limit. The analytical model of Marble and Candel for compact nozzles (J. Sound Vib., vol. 55, 1977, pp. 225–243), initially developed for excitations in the linear regime, is rederived and extended to the nonlinear domain. Full nonlinear and second-order models are written for both subcritical and supercritical nozzles in the absence of shock and a detailed methodology is provided for the resolution of the second-order system. The accuracy of the second-order model is assessed for entropy forcings. It is shown to be accurate for all waves, with the exception of the upstream generated wave for subcritical diverging geometries where higher-order nonlinear contributions cannot be neglected. In the context of indirect combustion noise, the phenomenon of regime change of the nozzle due to an incoming entropy fluctuation is also addressed. Regime change is related to a Mach number modification induced by temperature and velocity fluctuations. In the present study, it translates into a limitation of the maximum amplitude of the incoming entropy forcing. Such limitations are to be considered for subcritical nozzles with significant inlet or outlet Mach numbers, where the flow transition is observed even for very low-amplitude entropy excitations. With the constraint of those limitations, the analytical extended nozzle describing functions representing the full nonlinear response for indirect combustion noise are validated through detailed comparisons with numerical simulations.

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Chiang Te-Kuang. « A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges ». IEEE Electron Device Letters 31, n^o 8 (août 2010) : 788–90. http://dx.doi.org/10.1109/led.2010.2051317.

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Bazigos, A., F. Krummenacher, J. M. Sallese, M. Bucher, E. Seebacher, W. Posch, K. Molnár et Mingchun Tang. « A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET ». IEEE Transactions on Electron Devices 58, n^o 6 (juin 2011) : 1710–21. http://dx.doi.org/10.1109/ted.2011.2119487.

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Weidemann, Michaela, Alexander Kloes et Benjamin Iñiguez. « Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations ». Solid-State Electronics 52, n^o 11 (novembre 2008) : 1722–29. http://dx.doi.org/10.1016/j.sse.2008.06.043.

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Jain, Amit, Basanta Singh Nameriakpam et Subir Kumar Sarkar. « A new compact analytical model of single electron transistor for hybrid SET–MOS circuits ». Solid-State Electronics 104 (février 2015) : 90–95. http://dx.doi.org/10.1016/j.sse.2014.11.019.

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Smaani, Billel, Samir Labiod, Fares Nafa, Mohamed Salah Benlatreche et Saida Latreche. « Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs ». International Journal of Circuits, Systems and Signal Processing 15 (25 octobre 2021) : 1585–90. http://dx.doi.org/10.46300/9106.2021.15.170.

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In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model

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