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Bibliographies thématiques / CdTe polycrystalline thin film

Littérature scientifique sur le sujet « CdTe polycrystalline thin film »

Auteur : Grafiati

Publié le 11 mars 2023

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Articles de revues sur le sujet "CdTe polycrystalline thin film"

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Yan, Y., K. M. Jones et M. M. Al-Jassim. « Transmission Electron Microscopy Study of Planar Defects in Polycrystalline CdTe Thin Films ». Microscopy and Microanalysis 7, S2 (août 2001) : 556–57. http://dx.doi.org/10.1017/s1431927600028853.

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CdTe is a promising photovoltaic material due to its near optimum band gap and high absorption coefficient. Polycrystalline, thin-film CdTe/CdS solar cells have demonstrated an efficiency of 15.8%. High density of extended defects is often found in polycrystalline CdTe films grown by close-spaced sublimation (CSS). So far, most investigations of defects in CdTe have focused on epitaxially grown films, and the reported extended defects are mainly lamellar twins. However, epitaxially grown films generally have a different microstructure compared to CSS grown polycrystalline CdTe thin films. in this paper, we report our study of extended defects in CSSgrown polycrystalline CdTe thin films by high-resolution transmission electron microscopy (HRTEM). We found that the extended defects are mostly lamellar twins and stacking faults. The stacking faults always propagate across the grains, without ending at a partial dislocation inside the grains.

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Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu et S. S. Chu. « The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications ». Proceedings, annual meeting, Electron Microscopy Society of America 50, n^o 2 (août 1992) : 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

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Suntola, T. « CdTe Thin-Film Solar Cells ». MRS Bulletin 18, n^o 10 (octobre 1993) : 45–47. http://dx.doi.org/10.1557/s088376940003829x.

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Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.

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Dabban, Mehdi Ahmad, et Abdel-naser A. M. Alfaqeer. « Enhancement in microstructural and optical properties of thermally evaporated CdTe/CdSe heterojunction thin Films ». University of Aden Journal of Natural and Applied Sciences 26, n^o 2 (28 janvier 2023) : 273–84. http://dx.doi.org/10.47372/uajnas.2022.n2.a14.

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The optimization of microstructural and optical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe/CdSe thin films was reported in this work. We choose to research (CdSe) materials as a n-type absorber layer in the CdTe/CdSe heterojunction thin film. The Effect of annealing temperature on the structural and optical properties of CdTe/CdSe Heterojunction thin films was studied, using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and Double-beam computer-controlled spectrophotometer in the wavelength between 200 nm and 2500 nm. Diffraction (XRD) patterns showed that the as-prepared films were amorphous nature, whereas the annealed films were polycrystalline. These results were confirmed by scanning electron microscopy investigations. It was found that the crystallite size and degree of crystallinity of the studied films depend on the annealing temperature. Furthermore the optical measurement shows that this treatment shifts the optical absorption edge at low energy and decreases the optical band gap from 1.92 eV, to 1.37eV while the values Urbach energy increase as the annealing temperature increased from 300 K to 433 K. As consequence is that the heat treatment improves the quality of the CdTe/CdSe heterojunction thin films for the potential use in photovoltaic applications.

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K, Ramya, et Yuvaraja T. « Visual and Surface Properties of CdTe Thin Films on CdS/FTO Glass Substrates ». International Journal of Electrical and Computer Engineering (IJECE) 6, n^o 2 (1 avril 2016) : 468. http://dx.doi.org/10.11591/ijece.v6i2.9064.

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<p>Cadmium telluride (CdTe) thin film material was deposited ontop of Cadmium Sulfide (CdS) substrate using vacuum evaporation technique. The sample was characterized using X-ray diffraction(XRD) and UV-VIS-NIR spectroscopy. XRD studies revealed that the sample was polycrystalline in nature. The SEM image showed that the sample is columnar in structure and the grains are uniform. Optical band gap of the CdTe thin film was estimated from transmittance and reflectance data and it was found 1.53eV.The structural, optical and surface properties of the film showed that the CdTe thin film materials can be used for fabrication of CdTe thin film solar cell.</p>

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K, Ramya, et Yuvaraja T. « Visual and Surface Properties of CdTe Thin Films on CdS/FTO Glass Substrates ». International Journal of Electrical and Computer Engineering (IJECE) 6, n^o 2 (1 avril 2016) : 468. http://dx.doi.org/10.11591/ijece.v6i2.pp468-473.

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<p>Cadmium telluride (CdTe) thin film material was deposited ontop of Cadmium Sulfide (CdS) substrate using vacuum evaporation technique. The sample was characterized using X-ray diffraction(XRD) and UV-VIS-NIR spectroscopy. XRD studies revealed that the sample was polycrystalline in nature. The SEM image showed that the sample is columnar in structure and the grains are uniform. Optical band gap of the CdTe thin film was estimated from transmittance and reflectance data and it was found 1.53eV.The structural, optical and surface properties of the film showed that the CdTe thin film materials can be used for fabrication of CdTe thin film solar cell.</p>

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Asher, S. E. « Secondary Ion Mass Spectrometry Studies of Polycrystalline Thin-Film Cdte/Cds Solar Cells ». Proceedings, annual meeting, Electron Microscopy Society of America 48, n^o 2 (12 août 1990) : 304–5. http://dx.doi.org/10.1017/s0424820100135125.

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Polycrystalline thin films of CdTe deposited on CdS are one of the most promising materials systems currently being investigated for the fabrication of low cost, large area, high efficiency photovoltaic devices. However, many of the deposition processes being used to fabricate these thin film materials have not yet been well characterized. It has been found that a post-fabrication heat-treatment is necessary to improve the quantum efficiency of these devices. Secondary ion mass spectrometry (SIMS) was used to study the interdiffusion of S and Te in CdTe/CdS structures grown by two different methods. The depth profiles revealed significant differences in the sputtering behavior depending on the film morphology.Two sets of CdTe/CdS samples were studied. The first set of films was deposited at high temperature using a spray pyrolysis technique with no post deposition anneal. The second set of films was electroplated, followed by treatment with CdCl2 and a high temperature anneal.

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Ginting, M., et J. D. Leslie. « Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe ». Canadian Journal of Physics 67, n^o 4 (1 avril 1989) : 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas the n-ZnO – p-Zn3P2 polycrystalline film devices, and the n-ZnO – p-single crystal CdTe "heterojunctions" behaved most like metal–insulator–semiconductor devices. The high series resistance of all devices had to be considered in the measurement and analysis, and it limited the photovoltaic performance. Deep-level transient spectroscopy measurements indicated majority (hole) traps in the CdTe and Zn3P2 with activation energies in agreement with previous measurements in the literature.

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Gaewdang, Thitinai, N. Wongcharoen, P. Siribuddhaiwon et N. Promros. « Influence of Substrate Temperature on Some Properties of Close-Spacing Thermally Evaporated CdTe Thin Films ». Advanced Materials Research 55-57 (août 2008) : 881–84. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.881.

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CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0x10-5 mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications.

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Hussain, K. M. A., T. Faruqe, J. Parvin, S. Ahmed, Z. H. Mahmood et Ishtiaque M. Syed. « Preparation of CdTe Nuclear Detector Material in Thin Film Form using Thermal Evaporation Method ». Malaysian Journal of Medical and Biological Research 4, n^o 1 (30 juin 2017) : 29–34. http://dx.doi.org/10.18034/mjmbr.v4i1.421.

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A study is initiated about cadmium telluride (CdTe) materials deposition and characterization for radiation detector application. The CdTe thin film was grown on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. Three different samples were prepared where film thickness were 500, 600 and 700 nm measured by insitu quartz crystal thickness monitoring device during deposition process. The structural studies of the films were carried out using (X-ray diffraction) XRD analytical study and optical measurements were performed in the UV-VIS-NIR region using a spectrophotometer. The films grown at room temperature are polycrystalline as found by X-ray diffraction peaks. The optical transmission spectra of CdTe films showed a high transmission of about 85% to 90% in the visible region with a sharp fall near the fundamental absorption at 880 nm wavelength for the 500 and 600 nm films, and fundamental absorption at 1270 nm wavelength for 700 nm film.

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Thèses sur le sujet "CdTe polycrystalline thin film"

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Attygalle, Muthuthanthrige Lilani Chandrawansha. « Theoretical modeling of polycrystalline thin-film photovoltaics ». University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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Bridge, Chris. « Optical electrical and microstructural characterisation of polycrystalline thin film CdTe/CdS heterojunction solar cells ». Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680179.

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Ede, Anthony. « Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications ». Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/843974/.

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The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area flat panel digital imaging technique.

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Archbold, Martin David. « Polycrystalline CdS thin films and their role in CdS/CdTe photovoltaic devices ». Thesis, Durham University, 2007. http://etheses.dur.ac.uk/2138/.

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This thesis represents a systematic study of polycrystalline CdS thin films and their role as an n-type window layer in CdS/CdTe photovoltaic devices. This work encompasses the growth of CdS, primarily by the solution deposition method, and the subsequent characterisation of these films in isolation and as part of thin film CdS/CdTe device structures. A novel solution deposition approach was devised in order to grow high quality CdS thin films. Structural, electrical and chemical characterisation methods applied to these have shown that in their as-grown state they are highly oriented (in either the c[l1l] or h[002] direction), possess a small grain size of approximately 10-15 nm, and contain a considerable level of compressive strain. Annealing treatments in the presence of the fluxing agent CdCl(_2) have been shown to strongly modify the properties of these films, they are converted to a polycrystalline hexagonal structure with a significantly reduced level of strain, possess a larger grain size (27-28 nm) and a considerably enhanced crystalline quality. Novel 'hybrid' films comprising two CdS layers grown by different growth methods, one grown directly upon the other, have been studied. It has been shown that there are remarkable differences in morphology between these and films grown by a single growth method alone. Complete CdS/CdTe devices have been fabricated from several types of film grown in this study. Cell efficiencies of 9.80% were attained for a limited batch of devices, suggesting that these films possess good qualities for PV device fabrication. Early results from a novel tubular photovoltaic device concept are presented. This geometry has the potential to reduce manufacturing costs, may open up new routes to enhance the efficiency of CdS/CdTe devices, and is an attractive candidate for PV/solar thermal power generation.

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Inns, Daniel Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. « ALICIA polycrystalline silicon thin-film solar cells ». Publisher:University of New South Wales. Photovoltaics & ; Renewable Energy Engineering, 2007. http://handle.unsw.edu.au/1959.4/43600.

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Thin-film silicon photovoltaics are seen as a good possibility for reducing the cost of solar electricity. The focus of this thesis is the ALICIA cell, a thin-film polycrystalline silicon solar cell made on a glass superstrate. The name ALICIA comes from the fabrication steps - ALuminium Induced Crystallisation, Ion Assisted deposition. The concept is to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallisation (AIC). This is then the template from which to epitaxially grow the solar cell structure by Ion Assisted Deposition (IAD). IAD allows high-rate silicon epitaxy at low temperatures compatible with glass. In thin-film solar cells, light trapping is critical to increase the absorption of the solar spectrum. ALICIA cells have been fabricated on textured glass sheets, increasing light absorption due to their anti-reflection nature and light trapping properties. A 1.8 μm thick textured ALICIA cell absorbs 55% of the AM1.5G spectrum without a back-surface reflector, or 76% with an optimal reflector. Experimentally, Pigmented Diffuse Reflectors (PDRs) have been shown to be the best reflector. These highly reflective and optically diffuse materials increase the light-trapping potential and hence the short-circuit currents of ALICIA cells. In textured cells, the current increased by almost 30% compared to using a simple aluminium reflector. Current densities up to 13.7 mA/cm2 were achieved by application of a PDR to the best ALICIA cells. The electronic quality of the absorber layer of ALICIA cells is strongly determined by the epitaxy process. Very high-rate epitaxial growth decreases the crystalline quality of the epitaxial layer, but nevertheless increases the short-circuit current density of the solar cells. This indicates that the diffusion length in the absorber layer of the ALICIA cell is primarily limited by contamination, not crystal quality. Further gains in current density can therefore be achieved by increasing the deposition rate of the absorber layer, or by improving the vacuum quality. Large-area ALICIA cells were then fabricated, and series resistance reduced by using an interdigitated metallisation scheme. The best measured efficiency was 2.65%, with considerable efficiency gains still possible from optimisation of the epitaxial growth and metallisation processes.

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Attygalle, Muthuthanthrige Lilani C. « Theoretical modeling of polycrystalline thin-film photovoltaics / ». Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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Desai, Darshini. « Electrical characterization of thin film CdTe solar cells ». Access to citation, abstract and download form provided by ProQuest Information and Learning Company ; downloadable PDF file, 320 p, 2007. http://proquest.umi.com/pqdweb?did=1257806491&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Sugimoto, Yoshiharu. « Studies of CdTe electrodeposition ». Thesis, University of Southampton, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241263.

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Mackay, Ian. « Thin film electroluminescence / ». Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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Tetali, Bhaskar Reddy. « Stability studies of CdTe/CdS thin film solar cells ». [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001135.

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Livres sur le sujet "CdTe polycrystalline thin film"

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Gessert, Timothy A. Junction evolution during fabrication of CdS/CdTe thin-film PV solar cells. Golden, Colo.] : National Renewable Energy Laboratory, 2010.

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Yu, Su. Effects of oxygen adsorption on the electrical properties of thin film polycrystalline. Ottawa : National Library of Canada, 1993.

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3

T, Voutsas Apostolos, IS & T--the Society for Imaging Science and Technology. et Society of Photo-optical Instrumentation Engineers., dir. Poly-silicon thin film transistor technology and applications in displays and other novel technology areas : 21-22 January, 2003, Santa Clara, California, USA. Bellingham, Wash : SPIE, 2003.

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name, No. Poly-silicon thin film transistor technology and applications in display and other novel technology areas : 21-22 January, 2003, Santa Clara, California, USA. Bellingham, WA : SPIE, 2003.

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S, Ullal Harin, IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.) et National Renewable Energy Laboratory (U.S.), dir. The role of polycrystalline thin-film PV technologies in competitive PV module markets : Preprint. Golden, Colo : National Renewable Energy Laboratory, 2008.

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Albin, David S. Correlations of capacitance-voltage hysteresis with thin-film CdTe solar cell performance during accelerated lifetime testing. Golden, CO] : National Renewable Energy Laboratory, 2011.

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Deline, Chris. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization : Preprint. Golden, CO : National Renewable Energy Laboratory, 2011.

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National Renewable Energy Laboratory (U.S.), dir. Porous polycrystalline silicon thin film solar cells : Final report, 24 May 1999-24 May 2002. Golden, Colo : National Renewable Energy Laboratory, 2003.

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Cueto, J. A. del. Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules. Golden, Colo.] : National Renewable Energy Laboratory, 2009.

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Sandwisch, D. W. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules : Annual subcontract report 16 September 1996 - 15 January 1998. Golden, Colorado (1617 Cole Boulevard, Golden 80401-3393) : National Renewable Energy Laboratory, 1998.

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Chapitres de livres sur le sujet "CdTe polycrystalline thin film"

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Spachmann, J., E. Lüder, T. Kallfaß et W. Otterbach. « Thin Film Transistors and Light Sensors with Polycrystalline CdSe-Semiconductors ». Dans Springer Proceedings in Physics, 262–67. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_36.

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Liu, Fengzhen, et Yurong Zhou. « Polycrystalline Silicon Thin Film ». Dans Handbook of Photovoltaic Silicon, 1–34. Berlin, Heidelberg : Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_29-1.

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Liu, Fengzhen, et Yurong Zhou. « Polycrystalline Silicon Thin Film ». Dans Handbook of Photovoltaic Silicon, 757–90. Berlin, Heidelberg : Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_29.

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Beaucarne, Guy, et Abdellilah Slaoui. « Thin Film Polycrystalline Silicon Solar Cells ». Dans Thin Film Solar Cells, 97–131. Chichester, UK : John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch3.

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Clark, C. D., et C. B. Dickerson. « Electron irradiation and heat treatment of polycrystalline cvd diamond ». Dans Thin Film Diamond, 83–90. Dordrecht : Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_7.

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Onuma, Y., S. Miyashita, Y. Nishibe, K. Kamimura et K. Tezuka. « Thin Film Transistors Using Polycrystalline SiC ». Dans Springer Proceedings in Physics, 212–16. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_42.

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Romeo, Alessandro. « CdTe and CuInGaSe2 Thin-Film Solar Cells ». Dans Solar Cells and Modules, 197–217. Cham : Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46487-5_8.

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Budini, Nicolás, Roberto D. Arce, Román H. Buitrago et Javier A. Schmidt. « Polycrystalline Silicon for Thin Film Solar Cells ». Dans Alternative Energy and Shale Gas Encyclopedia, 226–32. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119066354.ch21.

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Böer, Karl W. « The CdS/CdTe Solar Cell ». Dans Handbook of the Physics of Thin-Film Solar Cells, 649–58. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_34.

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Böer, Karl W. « CdS/CdTe Analysis and Modeling ». Dans Handbook of the Physics of Thin-Film Solar Cells, 659–64. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_35.

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Actes de conférences sur le sujet "CdTe polycrystalline thin film"

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Meyers, Peter. « First Solar Polycrystalline CdTe Thin Film PV ». Dans 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279899.

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Mao, D., L. H. Feng, Y. Zhu, J. Tang, W. Song, R. Collins, D. L. Williamson et J. U. Trefny. « Interdiffusion in polycrystalline thin-film CdTe/CdS solar cells ». Dans The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49426.

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Palekis, Vasilios, Imran Khan, Shamara Collins, Chih An Hsu, Sudhajit Misra, Michael A. Scarpulla, Yong-Hang Zhang, Don Morel et Chris Ferekides. « Thin Film Solar Cells Based on n-type Polycrystalline CdTe Absorber ». Dans 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548249.

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Lustig, Zachary F., Tushar M. Shimpi, Akash Shah et Walajabad S. Sampath. « CuCl Doping Variations in High Efficiency Polycrystalline CdSeTe/CdTe Thin Film Solar Cells ». Dans 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC). IEEE, 2022. http://dx.doi.org/10.1109/pvsc48317.2022.9938587.

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Song, Huijin, Xiaoli Wu, Jiagui Zheng et Qiang Yan. « Study of CuxTe Polycrystalline Thin Films for CdTe Solar Cells ». Dans 2010 Asia-Pacific Power and Energy Engineering Conference. IEEE, 2010. http://dx.doi.org/10.1109/appeec.2010.5449530.

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6

Okamoto, T., R. Hayashi, Y. Ogawa, A. Hosono et M. Doi. « Fabrication of Polycrystalline CdTe Thin-Film Solar Cells using Carbon Electrodes with Carbon Nanotubes ». Dans 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.g-6-3.

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7

Chin, Ken K., et Su-Huai Wei. « Local charge neutgrality condition, Fermi level, and carrier compensation of CdTe polycrystalline thin film in CdS/CdTe solar cells ». Dans 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614140.

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8

Focsha, Alexandru, Petru Gashin et Alexei Simashkevich. « Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions ». Dans ASME 2001 Solar Engineering : International Solar Energy Conference (FORUM 2001 : Solar Energy — The Power to Choose). American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/sed2001-141.

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Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.

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9

McCandless, Brian E., et Robert W. Birkmire. « Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells ». Dans National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.57896.

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10

Clayton-Warwick, D., M. D. Kempe, M. S. Dabney, T. M. Barnes, C. A. Wolden et M. O. Reese. « Decoupling Thin Film CdTe Growth from Packaging : Toward Record Specific Power in Low Cost Polycrystalline PV ». Dans 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366074.

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Rapports d'organisations sur le sujet "CdTe polycrystalline thin film"

1

Gray, J. L., R. J. Schwartz et Y. J. Lee. Development of a Computer Model for Polycrystalline Thin-Film CuInSe2 and CdTe Solar Cells. Office of Scientific and Technical Information (OSTI), septembre 1992. http://dx.doi.org/10.2172/7023173.

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2

Gray, J. L., R. J. Schwartz et Y. J. Lee. Development of a Computer Model for Polycrystalline Thin-Film CuInSe2 and CdTe Solar Cells, Annual Subcontract Report, 1 January 1990 - 31 December 1990. Office of Scientific and Technical Information (OSTI), avril 1992. http://dx.doi.org/10.2172/5663044.

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3

Gray, J. L., R. J. Schwartz et Y. J. Lee. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990. Office of Scientific and Technical Information (OSTI), avril 1992. http://dx.doi.org/10.2172/10138707.

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4

Gray, J. L., R. J. Schwartz et Y. J. Lee. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells ; Annual subcontract report, 1 March 1992--28 February 1993. Office of Scientific and Technical Information (OSTI), mars 1994. http://dx.doi.org/10.2172/140909.

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5

Gray, J. L., R. J. Schwartz et Y. J. Lee. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, 1 January 1991--31 December 1991. Office of Scientific and Technical Information (OSTI), septembre 1992. http://dx.doi.org/10.2172/10176116.

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6

Strand, T., B. Kroposki, R. Hansen et L. Mrig. Polycrystalline thin-film module and system performance. Office of Scientific and Technical Information (OSTI), novembre 1995. http://dx.doi.org/10.2172/132676.

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7

Ullal, H. S. Polycrystalline Thin Film Solar Cell Technologies : Preprint. Office of Scientific and Technical Information (OSTI), décembre 2008. http://dx.doi.org/10.2172/945980.

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8

Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus et B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), janvier 1991. http://dx.doi.org/10.2172/6343732.

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9

Brog, T. K. Commercial production of thin-film CdTe photovoltaic modules. Final report. Office of Scientific and Technical Information (OSTI), octobre 1997. http://dx.doi.org/10.2172/544696.

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10

Meyers, P. Polycrystalline thin film cadmium telluride n-i-p solar cells. Office of Scientific and Technical Information (OSTI), juin 1990. http://dx.doi.org/10.2172/6772805.

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