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Articles de revues sur le sujet « CARRIER RELIABILITY »

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Auteur : Grafiati
Publié le 11 septembre 2023

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1

NASEH, SASAN, et M. JAMAL DEEN. « RF CMOS RELIABILITY ». International Journal of High Speed Electronics and Systems 11, no 04 (décembre 2001) : 1249–95. http://dx.doi.org/10.1142/s0129156401001088.

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In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.
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2

ZHAO, Lijuan. « Reliability Design of Shearer's Planet Carrier ». Journal of Mechanical Engineering 55, no 8 (2019) : 192. http://dx.doi.org/10.3901/jme.2019.08.192.

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3

Cheng, Junji, et Xingbi Chen. « Hot-carrier reliability in OPTVLD-LDMOS ». Journal of Semiconductors 33, no 6 (juin 2012) : 064003. http://dx.doi.org/10.1088/1674-4926/33/6/064003.

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4

Jie Liao, Cher Ming Tan et Geert Spierings. « Hot-Carrier Reliability of Power SOI EDNMOS ». IEEE Transactions on Power Electronics 25, no 7 (juillet 2010) : 1685–91. http://dx.doi.org/10.1109/tpel.2010.2041255.

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5

Soares, C. Guedes, et A. P. Teixeira. « Structural reliability of two bulk carrier designs ». Marine Structures 13, no 2 (mars 2000) : 107–28. http://dx.doi.org/10.1016/s0951-8339(00)00004-6.

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Koeppel, Gaudenz, et Göran Andersson. « Reliability modeling of multi-carrier energy systems ». Energy 34, no 3 (mars 2009) : 235–44. http://dx.doi.org/10.1016/j.energy.2008.04.012.

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Sugiharto, D. S., C. Y. Yang, Huy Le et J. E. Chung. « Beating the heat [CMOS hot-carrier reliability] ». IEEE Circuits and Devices Magazine 14, no 5 (1998) : 43–51. http://dx.doi.org/10.1109/101.721519.

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8

Hwang, Hyunsang, Jack Lee, Pierre Fazan et Chuck Dennison. « Hot-carrier reliability characteristics of narrow-width MOSFETs ». Solid-State Electronics 36, no 4 (avril 1993) : 665–66. http://dx.doi.org/10.1016/0038-1101(93)90284-w.

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9

Aur, S., et Ping Yang. « IVB-6 hot-carrier reliability of trench transistor ». IEEE Transactions on Electron Devices 34, no 11 (novembre 1987) : 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.

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10

Minehane, S., S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson et B. Mason. « Direct parameter extraction for hot-carrier reliability simulation ». Microelectronics Reliability 37, no 10-11 (octobre 1997) : 1437–40. http://dx.doi.org/10.1016/s0026-2714(97)00081-4.

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11

Rafı́, J. M., et F. Campabadal. « Hot-carrier reliability in deep-submicrometer LATID NMOSFETs ». Microelectronics Reliability 40, no 4-5 (avril 2000) : 743–46. http://dx.doi.org/10.1016/s0026-2714(99)00300-5.

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12

Mustafa, Samah A. « Reliability of Trigonometric Transform-based Multi-Carrier Scheme ». ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 6, no 2 (22 décembre 2018) : 49. http://dx.doi.org/10.14500/aro.10312.

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This work is looking for a new physical layer of a multi-carrier wireless communication system to be implemented in low complexity way, resorting to suitable fast transform. The work presents and assesses a scheme based on Discrete Trigonometric Transform with appending symmetric redundancy either in each or multiple consecutive transformed blocks. A receiver front-end filter is proposed to enforce whole symmetry in the channel impulse response, and bank of one tap filter per sub-carrier is applied as an equalizer in the transform domain. The behaviour of the transceiver is studied in the context of practical impairments like fading channel, carrier frequency offset and narrow band interference. Moreover, the performance is evaluated in contrast with the state of art methods by means of computer simulations, and it has been found that the new scheme improves robustness and reliability of communication signal, and record lower peak to average power ratio. The study demonstrates that front-end matched filter effectively performs frequency synchronization to compensate the carrier frequency offset in the received signal.
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13

Zhao, Xilin, Fei Liu, Bo Fu et Na Fang. « Reliability analysis of hybrid multi-carrier energy systems based on entropy-based Markov model ». Proceedings of the Institution of Mechanical Engineers, Part O : Journal of Risk and Reliability 230, no 6 (décembre 2016) : 561–69. http://dx.doi.org/10.1177/1748006x16663056.

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Various new technologies for conversion between different forms of energy promote the appearance of hybrid multi-carrier energy system. For the purpose of optimized dispatch of multi-carrier energy and the security requirement of energy system, the reliability of this kind of energy system needs to be discussed. This article proposes a method based on entropy-based Markov model to analyze the reliability of hybrid multi-carrier energy system. First, the method to obtain the reliability of individual energy carrier is discussed. Second, the characteristic of entropy-based Markov model is analyzed. The method is shown to be an effective technique to obtain the reliability of the whole multi-carrier energy system depending on the reliability of individual energy carrier. Then, the fusion process to obtain the reliability of whole multi-carrier energy system is described. The result indicates that the reliability of the whole system is the reliability synthesized of individual energy supply and can be treated as a factor for the optimized process of multi-carrier energy dispatch. The effectiveness of the method is demonstrated by some examples.
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14

Hou, Changbo, Jie Zhang, Yonggui Yuan, Jun Yang et Libo Yuan. « Reliability Demodulation Algorithm Design for Phase Generated Carrier Signal ». IEEE Transactions on Reliability 71, no 1 (mars 2022) : 127–38. http://dx.doi.org/10.1109/tr.2021.3125068.

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15

Hokazono, A., S. Balasubramanian, K. Ishimaru, H. Ishiuchi, Chenming Hu et Tsu-Jae King Liu. « MOSFET hot-carrier reliability improvement by forward-body bias ». IEEE Electron Device Letters 27, no 7 (juillet 2006) : 605–8. http://dx.doi.org/10.1109/led.2006.877306.

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16

Uraoka, Y., N. Tsutsu, Y. Nakata et S. Akiyama. « Evaluation technology of VLSI reliability using hot carrier luminescence ». IEEE Transactions on Semiconductor Manufacturing 4, no 3 (1991) : 183–92. http://dx.doi.org/10.1109/66.85938.

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17

Quader, K. N., E. R. Minami, Wei-Jen Ko, P. K. Ko et Chenming Hu. « Hot-carrier-reliability design guidelines for CMOS logic circuits ». IEEE Journal of Solid-State Circuits 29, no 3 (mars 1994) : 253–62. http://dx.doi.org/10.1109/4.278346.

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18

Lee, Woosung, et Hyunsang Hwang. « Hot carrier reliability characteristics of a bend-gate MOSFET ». Solid-State Electronics 44, no 6 (juin 2000) : 1117–19. http://dx.doi.org/10.1016/s0038-1101(00)00004-6.

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19

Momose, Hisayo Sasaki, Shin-ichi Nakamura, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Toyota Morimoto, Yasuhiro Katsumata et Hiroshi Iwai. « Hot-carrier reliability of ultra-thin gate oxide CMOS ». Solid-State Electronics 44, no 11 (novembre 2000) : 2035–44. http://dx.doi.org/10.1016/s0038-1101(00)00101-5.

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20

Fang, Lang, Xiaoning Zhang, Keshav Sood, Yunqing Wang et Shui Yu. « Reliability-aware virtual network function placement in carrier networks ». Journal of Network and Computer Applications 154 (mars 2020) : 102536. http://dx.doi.org/10.1016/j.jnca.2020.102536.

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21

Qu, Long, Maurice Khabbaz et Chadi Assi. « Reliability-Aware Service Chaining In Carrier-Grade Softwarized Networks ». IEEE Journal on Selected Areas in Communications 36, no 3 (mars 2018) : 558–73. http://dx.doi.org/10.1109/jsac.2018.2815338.

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22

Dózsa, L. « On the reliability of minority carrier injection DLTS spectra ». physica status solidi (a) 94, no 2 (16 avril 1986) : 735–43. http://dx.doi.org/10.1002/pssa.2210940240.

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23

Meehan, Alan, Paula O'Sullivan, Paul Hurley et Alan Mathewson. « Hot-carrier reliability lifetimes as predicted by Berkeley's model ». Quality and Reliability Engineering International 11, no 4 (1995) : 269–72. http://dx.doi.org/10.1002/qre.4680110410.

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24

Liu, Hong Mei, et Li Juan Zhao. « Fatigue Analysis of Planet Carrier Based on Collaborative Simulation ». Advanced Materials Research 189-193 (février 2011) : 1910–13. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1910.

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The fatigue analysis of planet carrier of shearer cutting unit was carried out based on collaborative simulation technology. Through co-simulation, the fatigue cloud of planet carrier was obtained, which provided a basis for planet carrier structural optimization and improved the planet carrier reliability.
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25

SALDANHA, JOHN P., DAWN M. RUSSELL et JOHN E. TYWORTH. « A Disaggregate Analysis of Ocean Carriers' Transit Time Performance ». Transportation Journal 45, no 2 (2006) : 39–60. http://dx.doi.org/10.2307/20713633.

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Abstract This study provides a disaggregate analysis of ocean carrier speed and reliability. The findings produce direct evidence that dramatic differences in carrier transit time and transit time reliability, also referred to collectively as transit time performance, prevail across major trade lanes. These results bring attention to transit time performance, which previous studies have shown to receive little attention from shippers, especially for ocean carrier selection. Differences in transit time performance impact not only shippers' carrier selection decisions, but also their development of effective international ocean transportation strategies. Liner ocean carriers can also use these results as a benchmark to judge how well they perform relative to the competition.
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SALDANHA, JOHN P., DAWN M. RUSSELL et JOHN E. TYWORTH. « A Disaggregate Analysis of Ocean Carriers' Transit Time Performance ». Transportation Journal 45, no 2 (2006) : 39–60. http://dx.doi.org/10.5325/transportationj.45.2.0039.

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Abstract This study provides a disaggregate analysis of ocean carrier speed and reliability. The findings produce direct evidence that dramatic differences in carrier transit time and transit time reliability, also referred to collectively as transit time performance, prevail across major trade lanes. These results bring attention to transit time performance, which previous studies have shown to receive little attention from shippers, especially for ocean carrier selection. Differences in transit time performance impact not only shippers' carrier selection decisions, but also their development of effective international ocean transportation strategies. Liner ocean carriers can also use these results as a benchmark to judge how well they perform relative to the competition.
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27

Zhao, Jinghao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou et Qi Guo. « A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation ». International Journal of Materials, Mechanics and Manufacturing 7, no 2 (avril 2019) : 100–104. http://dx.doi.org/10.18178/ijmmm.2019.7.2.439.

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28

Hokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, C. D. Young, G. Bersuker, J. C. Lee et Hyunsang Hwang. « Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs ». IEEE Electron Device Letters 27, no 8 (août 2006) : 662–64. http://dx.doi.org/10.1109/led.2006.878041.

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29

Lin, Wei Shin. « The Reliability Analysis of a Vacuum Forming Mold for IC Packing Bag ». Advanced Materials Research 136 (octobre 2010) : 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.136.114.

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This article is pointed to the reliability analysis of the vacuum forming mold for plastic carrier tape. The reliability analysis of the vacuum forming mold was decided by the dimension specification of the plastic carrier tape. The reliability design of the vacuum forming mold was preceded according to the reliability requirement. After detail design of the parts which would be manufactured and assembled. The accuracy and performance of the mold had been tested subsequently. The reliability of the mold was conducted by the accuracy of the plastic carrier tape. Through series of inspections and analysis, all the dimension accuracy of the plastic carrier tape met the specification, and vacuum forming mold’s reliability level confirms to design requirement.
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30

Foschini, G. J. « Reliability of the repelling carrier method of implementing optical FDMA ». IEEE Transactions on Communications 37, no 12 (1989) : 1275–81. http://dx.doi.org/10.1109/26.44199.

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31

Maricau, Elie, et Georges Gielen. « Efficient Variability-Aware NBTI and Hot Carrier Circuit Reliability Analysis ». IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 29, no 12 (décembre 2010) : 1884–93. http://dx.doi.org/10.1109/tcad.2010.2062870.

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32

Ping-Chung Li et I. N. Hajj. « Computer-aided redesign of VLSI circuits for hot-carrier reliability ». IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 15, no 5 (mai 1996) : 453–64. http://dx.doi.org/10.1109/43.506133.

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33

Kueing-Long Chen, S. A. Saller, I. A. Groves et D. B. Scott. « Reliability Effects on MOS Transistors Due to Hot-Carrier Injection ». IEEE Journal of Solid-State Circuits 20, no 1 (février 1985) : 306–13. http://dx.doi.org/10.1109/jssc.1985.1052307.

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34

Kueing-Long Chen, S. A. Saller, I. A. Groves et D. B. Scott. « Reliability effects on MOS transistors due to hot-carrier injection ». IEEE Transactions on Electron Devices 32, no 2 (février 1985) : 386–93. http://dx.doi.org/10.1109/t-ed.1985.21953.

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35

Brisbin, Douglas, Andy Strachan et Prasad Chaparala. « Optimizing the hot carrier reliability of N-LDMOS transistor arrays ». Microelectronics Reliability 45, no 7-8 (juillet 2005) : 1021–32. http://dx.doi.org/10.1016/j.microrel.2004.11.054.

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36

Kamal, Mehdi, Qing Xie, Massoud Pedram, Ali Afzali-Kusha et Saeed Safari. « An efficient temperature dependent hot carrier injection reliability simulation flow ». Microelectronics Reliability 57 (février 2016) : 10–19. http://dx.doi.org/10.1016/j.microrel.2015.12.008.

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37

Pan, Y., K. K. Ng et V. Kwong. « A novel hot carrier reliability monitor for LDD p-MOSFETs ». Solid-State Electronics 37, no 12 (décembre 1994) : 1961–65. http://dx.doi.org/10.1016/0038-1101(94)90063-9.

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38

Goguenheim, D., A. Bravaix, D. Vuillaume, M. Varrot, N. Revil et P. Mortini. « HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS ». Microelectronics Reliability 38, no 4 (avril 1998) : 539–44. http://dx.doi.org/10.1016/s0026-2714(97)00217-5.

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39

Hori, Takashi. « Nitrided gate-oxide CMOS technology for improved hot-carrier reliability ». Microelectronic Engineering 22, no 1-4 (août 1993) : 245–52. http://dx.doi.org/10.1016/0167-9317(93)90167-4.

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40

Yi, Peng Xing, Li Jian Dong et Yuan Xin Chen. « The Multi-Objective Optimization of the Planet Carrier in Wind Turbine Gearbox ». Applied Mechanics and Materials 184-185 (juin 2012) : 565–69. http://dx.doi.org/10.4028/www.scientific.net/amm.184-185.565.

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In order to improve the reliability of a planet carrier, a simulation method based on multi-objective design optimization was developed in this paper. The objective of the method was to reduce the stress concentration, the deformation, and the quality of the planet carrier by optimizing the structure dimension. A parametric finite element model, which enables a good understanding of how the parameters affect the reliability of planet carrier, was established and simulated by ANSYS-WORKBENCH. The efficiency of the design optimization was improved by using a polynomials response surface to approximate the results of finite element analysis and a screening algorithm to determine the direction of optimization. Furthermore, the multi-objective optimization was capable of finding the global minimum results in the use of the minimum principle on the response surface. Computer simulation was carried out to verify the validity of the presented optimization method, by which the quality and the stability of the planet carrier were significantly reduced and improved, respectively. The methodology described in this paper can be effectively used to improve the reliability of planet carrier.
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41

Gong, Yan Jue, Fu Zhao, Hong Bing Xin, Hui Yu Xiang, Chun Ling Meng et Yuan Zhang. « Modeling and Simulation Research of Time-Dependent Reliability Model of Tooth Carrier in Feed Mechanism ». Applied Mechanics and Materials 701-702 (décembre 2014) : 739–42. http://dx.doi.org/10.4028/www.scientific.net/amm.701-702.739.

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The time-dependent reliability model of Mechanical Component is influenced by many parameters such as stress, load, strength, strength degeneration and lifetime index. This paper builds the time-dependent reliability model when life is measured by the loading numbers. The variety law of mechanical component’s reliability with the lifetime is derived from the built model and simulation of tooth carrier in feed mechanism used in the sewing machine. The result shows that the time-dependent reliability model is effective and the reliability of component decreases obviously with the loading numbers when the strength degeneration is considered.
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42

Astashkov, Nikolay, et Yuriy Belogolov. « METHOD FOR INCREASING THE RELIABILITY OF THE PHASE SPLITTERS ELECTRIC CARRIER ». Modern Technologies and Scientific and Technological Progress 1, no 1 (17 mai 2021) : 217–18. http://dx.doi.org/10.36629/2686-9896-2021-1-1-217-218.

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43

Pereguda, Arkadij Ivanovich, et Vladimir Ivanovich Belozerov. « Prediction of reliability of flow sensors of SHADR-32m heat carrier ». Izvestiya Wysshikh Uchebnykh Zawedeniy, Yadernaya Energetika 2017, no 1 (mars 2017) : 51–62. http://dx.doi.org/10.26583/npe.2017.1.05.

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44

Chen, Yilong, Fan Li, Kui Li, Xue Li, Min Liu et Gang Liu. « Thermal fatigue reliability improvement of leadless ceramic chip carrier solder joints ». Microelectronics Reliability 132 (mai 2022) : 114532. http://dx.doi.org/10.1016/j.microrel.2022.114532.

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Mohd Dzukhi, M. I., T. A. Musa, W. A. Wan Aris, A. H. Omar et I. A. Musliman. « RELIABILITY OF THE GPS CARRIER-PHASE FIX SOLUTION UNDER HARSH CONDITION ». International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences XLVI-4/W3-2021 (11 janvier 2022) : 223–27. http://dx.doi.org/10.5194/isprs-archives-xlvi-4-w3-2021-223-2022.

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Abstract. Once the unknown integer ambiguity values are resolved, the GPS carrier phase observation will be transformed into a millimeter-level precision measurement. However, GPS observation are prone to a variety of errors, making it a biased measurement. There are two components in identifying integer ambiguities: estimation and validation. The estimation procedure aims to determine the ambiguity's integer values, and the validation step checks whether the estimated integer value is acceptable. Even though the theory and procedures for ambiguity estimates are well known, the topic of ambiguity validation is still being researched. The dependability of computed coordinates will be reduced if a false fixed solution emerges from an incorrectly estimated ambiguity integer value. In this study, the reliability of the fixed solution obtained by using several base stations in GPS positioning was investigated, and the coordinates received from these bases were compared. In a conclusion, quality control measures such as employing several base stations will improve the carrier phase measurement's accuracy.
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Jain, S., W. T. Cochran et M. L. Chen. « Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliability ». IEEE Electron Device Letters 9, no 10 (octobre 1988) : 539–41. http://dx.doi.org/10.1109/55.17837.

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Jung, Sang-Hoon, Hee-Sun Shin et Min-Koo Han. « Defect-Free Junction TFT for Improving Reliability under Hot Carrier Stress ». Physica Scripta T114 (1 janvier 2004) : 127–29. http://dx.doi.org/10.1088/0031-8949/2004/t114/032.

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Chen, H. W., S. Y. Chen, C. C. Lu, C. H. Liu, F. C. Chiu, Z. Y. Hsieh, H. S. Huang et al. « Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions ». ECS Transactions 16, no 5 (18 décembre 2019) : 55–65. http://dx.doi.org/10.1149/1.2981587.

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49

Dieudonné, François, Sébastien Haendler, Jalal Jomaah et Francis Balestra. « Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs ». Solid-State Electronics 48, no 6 (juin 2004) : 985–97. http://dx.doi.org/10.1016/j.sse.2003.12.025.

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Kizilyalli, I. C., J. W. Lyding et K. Hess. « Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability ». IEEE Electron Device Letters 18, no 3 (mars 1997) : 81–83. http://dx.doi.org/10.1109/55.556087.

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