Littérature scientifique sur le sujet « Capping-protection layer »

Sandwich stacked Ti/Cu/Si thin films were deposited on a single-side polished Si(111) substrate using DC magnetron sputtering system and annealed using a rapid thermal annealing (RTA) system. Complex dendritic patterns, whose branches are composed of Cu rods and triangular Cu microcrystals were obtained on Ti/Cu thin film annealed at 700[Formula: see text]C. The shape of one triangular Cu microcrystal is a truncated equilateral triangular pyramid with a flat top. Triangular Cu microcrystals grow in the number when Ti/Cu thin films are annealed at 800[Formula: see text]C. Experimental results show that anisotropy affects the growth of surface patterns and the top Ti capping layer works as a protection for the underlying Cu layer from oxidation.

Micro-electromechanical systems (MEMS) devices are extremely sensitive to their environment, especially at the wafer level, until they are packaged in final form. The harsh back-end (BE) operations that the MEMS devices have to endure include dicing, pick-and-place, wire bonding, and molding. During these processing steps, the MEMS device is exposed to particles and contaminants. Therefore, protection at an early stage is a fundamental requirement. We describe a silicon nitride thin-film capping, which is processed using a sacrificial layer technique only with front-end technology. This approach is suitable for mass production of MEMS devices, owing to the fact that it is more cost-effective when compared to other approaches such as wafer-to-wafer bonding and die-to-wafer bonding. A bulk acoustic wave (BAW) resonator that finds application in the radio frequency (RF) front end, for example, in cell phones, is taken as a MEMS vehicle for our work. It is an example of an extremely sensitive MEMS device, because the resonance frequency shifts significantly when additional mass is accidentally deposited on its surface. The thickness of the silicon nitride capping that is required to withstand all the BE steps, in particular transfer molding, is estimated using simple analytical calculations and finite element model (FEM) simulations. The pressure acting on the thin film capping and the thermal load during molding are included in the FEM model. Using this, the minimum thickness required for the capping is determined. We prove that a BAW resonator capped with silicon nitride at the wafer level can be wafer-thinned, diced, wire bonded, and molded without major degradation in performance.

Micro-electromechanical systems (MEMS) devices are extremely sensitive to their environment, especially at wafer-level, until they are packaged in final form. The harsh back-end (BE) operations that the MEMS devices have to endure include dicing, pick-and-place, wire bonding and molding. During these processing steps, the MEMS device is exposed to particles and contaminants. Therefore, protection at an early stage is a fundamental requirement. In this work, we describe a silicon nitride thin-film capping, which is processed using a sacrificial layer technique only with front-end technology. This approach is suitable for mass production of MEMS devices, owing to the fact that, it is more cost-effective when compared to other approaches such as wafer-to-wafer bonding and die-to-wafer bonding. A Bulk Acoustic Wave (BAW) resonator, that finds application in the Radio Frequency (RF) front end, e.g., in cell phones, is taken as a MEMS vehicle for our work. It is an example of an extremely sensitive MEMS device, because the resonance frequency shifts significantly when additional mass is accidentally deposited on its surface. The thickness of the silicon nitride capping that is required to withstand all the BE steps, in particular transfer molding, is estimated using simple analytical calculations and finite element model (FEM) simulations. The pressure acting on the thin film capping and the thermal load during molding are included in the FEM model. Using this, the minimum thickness required for the capping is determined. We prove that, a BAW resonator capped with silicon nitride at wafer-level can be wafer-thinned, diced, wire bonded and molded without major degradation in its performance.

Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrystalline diamond capping layers have been studied systematically. The approach of diamond-before-gate has been adopted to resolve the growth of nanocrystalline diamond capping layers and compatibility with the Schottky gate of GaN HEMTs, and the processes of diamond multi-step etching technique and AlGaN barrier protection are presented to improve the technological challenge of gate metal. The GaN HEMTs with nanocrystalline diamond passivated structure have been successfully prepared; the heat dissipation capability and electrical characteristics have been evaluated. The results show the that thermal resistance of GaN HEMTs with nanocrystalline diamond passivated structure is lower than conventional SiN-GaN HEMTs by 21.4%, and the mechanism of heat transfer for NDC-GaN HEMTs is revealed by simulation method in theory. Meanwhile, the GaN HEMTs with nanocrystalline diamond passivated structure has excellent output, small signal gain and cut-off frequency characteristics, especially the current–voltage, which has a 27.9% improvement than conventional SiN-GaN HEMTs. The nanocrystalline diamond capping layers for GaN HEMTs has significant performance advantages over the conventional SiN passivated structure.

The perfect structure of a 2H-MoTe₂ bilayer in situ capped with an ultra-thin Al layer providing an excellent AlO_x protection cap and long timescale stability when exposed to air and nitrogen atmospheres.

Flexible electronics and sensors are a key enabling element for the realization of wearables and geometry adaptive devices needed to follow current trends such as the Internet of things or Industry 4.0. Within this paper, we present a new and flexible packaging platform by the fabrication of an ultra-thin and highly flexible printed circuit board (PCB). The thermoplastic polymer Parylene, which combines a variety of unique properties such as optical transparency, biostability and biocompatibility according to ISO 10993, thermal stability as well as low permeability for gases and water, was used as the base for the new PCB. Particularly, its mechanical properties, especially the absence of intrinsic stresses, as well as its low Young’s modulus and good bendability are advantageous when using Parylene films as a free-standing substrate for flexible applications. The chemical inertness of Parylene against all common acids, bases and solvents ensures its compatibility with established standard microsystem technologies. For the realization of ultra-thin flexible PCBs, Parylene was used as a substrate as well as for the encapsulation and protection layer, respectively. Furthermore, Parylene was the dielectric between the metallic conductive layers. These redistribution layers (RDL) were deposited and patterned by standard microsystem technologies, such as sputtering, lithography and wet chemical etching. Hence, structure sizes of down to 10 µm were successfully realized. Different metals, such as gold, copper, and aluminum were tested for the RDL. Alternatively, printing technologies such as screen printing and aerosol jet printing were successfully demonstrated for the if conductive silver layerse. The electrical connection between the various RDL was of special interest throughout the study and was realized by etching vertical vias through the Parylene using oxygen plasma. Due to the low total thickness of the flexible Parylene PCB of 20 µm or even less, the obtained vias through the Parylene feature an advantageous low aspect ratio. For the contact formation through the vias, different methods were investigated, e. g. sputtering, printing and electrochemical deposition. Finally, the fabricated flexible Parylene PCB were characterized with respect to their bendability and electrical properties. Doing so, the resistivity and capacitance were measured as well as the frequency response between 20 kHz and 500 MHz. Particularly, for frequencies below 1 MHz the realized flexible Parylene PCBs show a good electrical performance. A third function of Parylene with respect to the realization of an ultra-thin and flexible PCB is its usage as a barrier or capping layer. Doing so, new approaches such as embedding electronic or sensor components in the flexible PCB can be enabled. Other integration technologies such as wire bonding, printing or gluing were investigated with respect to their usability for the new flexible PCB as well. Besides, also the direct fabrication of sensors on the Parylene flexible PCB was successfully demonstrated by the realization of a flexible potentiometric pH sensor. The presented new type of ultra-thin PCB is a versatile platform for the realization of flexible electronics, sensors and devices. Due to its biocompatible properties, the flexible Parylene PCB can be used for medical applications but also for the integration of MEMS, chemical sensors and optical components, respectively. Doing so, it enables the realization of smart systems for wearable applications and their integration into light weight constructions. Within this paper, the concept of this new approach, the respected fabrication and integration technologies as well as possible applications are presented in detail. Figure 1

Abstract Aims and Objectives: Viability and health of the pulpal tissue after an exposure can be stimulated with biocompatible pulp capping materials. Mineral trioxide aggregate(MTA), though biocompatible with excellent sealing ability, has clinical disadvantages like poor handling properties and long setting time. New pulp capping agents- Biodentine and Theracal have proven to overcome MTA’s shortcomings. This study aimed to comparatively evaluate the sealing ability of Mineral Trioxide Aggregate(Angelus), Biodentine (Septodont) and Theracal(Bisco) when used as pulp capping agents. Materials and Methods: Occlusal cavities were prepared in extracted human third molars. The cavities were divided into 3 groups containing 12 samples each. Pulp capping in samples of group I, II and III was done with MTA, Biodentine and Theracal respectively. All samples were kept in a damp environment for 24 hrs. In each tooth, the root was cut just below the cementum-enamel junction. An aqueous 0.25% solution of Rhodamine-B was put in the open pulp chambers of all the samples and placed upside-down in a damp environment. The dye was left for 3 hrs to permeate toward the interface. After being stained, all samples were rinsed with distilled water and sectioned vertically. A Confocal Laser Scanning Microscope was used to image the samples. Results: No significant difference was found in interfacial microleakage between MTA and Biodentine. Theracal exhibited less interfacial microleakage than the two. Conclusion: Biodentine and MTA exhibit an efficient and durable protection of pulp. Theracal exhibits better sealing ability as a pulp capping agent than MTA and Biodentine.

2007/2008
This thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port measurements have given an important contribution on specifi c topics. The first section of this thesis reports on GaAs, InAs, and InGaAs NWs growth by Au assisted MBE. A substrate treatment is proposed that improves uniformity in the NWS morphology. Thanks to a careful statistical analysis of the NWs shape and dimensions as a function of growth temperature and duration, evidence is found of radial growth of the NWs taking place together with the axial growth at the tip. This eff ect is interpreted in term of temperature dependent diff usion length of the cations on the NWs lateral surface. The control of the NWs radial growth allowed to grow core shell InGaAs/GaAs NWs, displaying superior optical quality. A new procedure is proposed to protect NWs surface from air exposure. This procedure allowed to perform ex-situ SPEM studies of electronic properties of the NWs. The second part of this thesis is devoted to Au-free NWs growth. GaAs and InAs NWs were successfully grown for the first time using Mn as catalyst. Incorporation of Mn in the NW is studied using EXAFS technique. It is shown that Mn atoms are incorporated in the body of GaAs NWs. Use of low growth temperature is suggested in order to improve the Mn incorporation inside GaAs NWs and obtain NWs with magnetic properties. Finally, growth of GaAs and InAs NWs on cleaved Si subtrate is demonstrated without the use of any outside metal catalyst. Two kinds of nanowires have been obtained. The experimental findings suggest that the two types of nanowires grow after di fferent growth processes.
Questa tesi e' dedicata allo studio della crescita di nanofili di semiconduttori III- V tramite epitassia da fasci molecolari (MBE) assistita da catalizzatore e senza l'uso di catalizzatori. Le nanostrutture sono state caratterizzate sistematicamente tramite microscopia elettronica a scansione (SEM), e in maniera minore microscopia elettronica in trasmissione (TEM). Altre tecniche come la spettroscopia di fotoemissione da raggi x (XPS), la microscopia da fotoemissione in scansione (SPEM), la spettroscopia di assorbimento x (in particolare la extended X-ray absorpition fine structure analysis (EXAFS)) la fotoluminescenza (PL), e il trasporto elettrico hanno dato importanti contributi su problematiche specifiche. La prima parte di questa tesi riguarda la crescita di nanofili di GaAs, InAs e InGaAs tramite MBE assistita da oro. Viene proposto un trattamento del substrato che migliora nettamente l'omogeneita' morfologica dei nanofili. Grazie ad un'attenta analisi statistica della forma e delle dimensioni dei nanofili in funzione della temperatura e del tempo di crescita e' stata dimostrata la crescita radiale dei nanofili, che avviene insieme alla crescita assiale che ha luogo alla punta del nanofilo. Le osservazioni sperimentali sono state interpretate in termini di dipendenza dalla temperatura della lunghezza di diffusione dei cationi sulle super ci laterali dei nanofili. Il controllo della crescita radiale ha permesso di crescere nanofili di InGaAs/GaAs core shell, costituiti cioe' da una anima centrale di InGaAs (core) e uno strato esterno di GaAs (shell) , che hanno dimostrato eccellente qualita' ottica. Viene quindi proposta una nuova procedura per proteggere la super ficie dei nanofili durante l'esposizione all'aria. Grazie a questa e' stato possibile realizzare ex-situ uno studio SPEM delle proprieta' elettroniche dei nanofili. La seconda parte della tesi riguarda la crescita di nanofili senza l'uso di oro. Viene per la prima volta dimostrata la possibilita' di crescere nanofili di GaAs e InAs usando il manganese come catalizzatore. L'incorporazione del Mn come impurezza nei nanofili e' stata studiata tramite EXAFS. Le misure hanno dimostrato che atomi di Mn sono effettivamente incorporate nel corpo dei nano fili. La crescita delle nanostrutture a temperatura piu' bassa potrebbe migliorare qualitativamente l'incorporazione del Mn e permettere la crescita di nanofili con proprieta' magnetiche. Viene in fine dimostrata la crescita di nanofili di GaAs e di InAs senza l'utilizzo di materiali diversi da quelli costituenti il semiconduttore. Tale risultato e' ottenuto su superfici sfaldate di silicio. Sono state osservate nanostrutture di due tipi, che sulla base dei dati sperimentali sembrano essere dovuti a due diversi meccanismi di crescita.
XXI Ciclo
1977

The Z alkene of nakadomarin A 3 suggested to Raymond L. Funk an approach (Org. Lett. 2010, 12, 4912) based on ring-closing alkyne metathesis. The efficient assembly of 3 he reported illustrates the power of convergent design in target-directed synthesis. A practical limit on applications of alkyne metathesis is the requirement for internal alkynes, necessitating methyl capping of a terminal alkyne. In an alternative approach, Professor Funk took advantage of the long-known ( J. Chem. Soc. 1954 , 3201) equilibration of a terminal alkyne 4 to the internal alkyne 5. Homologation of 5 with the phosphonate 6, followed by condensation with the ketone 7, then delivered the furan 8. The assembly of the other half of 1 began with the commercial alcohol derived by reduction of D -pyroglutamic acid. Protection gave 9, which on hydride addition and dehydration was converted to 10. One-carbon homologation with the Vilsmeier-Haack reagent proceeded with the expected regiocontrol. This set the stage for the triply convergent assembly of 14 , first reductive amination of the aldehyde 11 with 12 , then acylation of the resulting secondary amine with 13. The nucleophilic 14 was condensed with the aldehyde 8 to give an enone (not illustrated). Exposure of the enone to InCl 3 initiated an elegant cascade cyclization, first of the enamide in a conjugate sense to the enone, then Friedel-Crafts addition of the resulting N-stabilized carbocation to the furan, to deliver 15. The pendant silyloxymethyl group exerted the hoped-for diastereocontrol, allowing the direct construction of the central tetracycle of 3. Hydrolysis and decarboxylation completed the assembly of the diyne 1. Initially, it was found that exposure of 1 to a molybdenum catalyst delivered 2 in only modest yield. As an alternative, they employed the technically more challenging tungsten-based Schrock catalyst. Later, they found that the recently developed Fürstner Mo protocol also worked well. The amide 2 could readily be carried on to the triene 18. With the first-generation Grubbs catalyst G1, kinetic ring-closing metathesis of 18, to complete the assembly of (-)-nakadomarin 3, could be effected without jeopardizing the existing Z alkene.

Ningyo-toge Uranium Mine is subject to the environmental remediation. The main purposes are to take measures to ensure the radiation protection from the exposure pathways to humans in future, and to prevent the occurrence of mining pollution. The Mill Tailings Pond in the Ningyo-toge Uranium Mine has deposited mining waste and impounded water as a buffer reservoir before it is transferred to the Water Treatment Facility. It is located at the upstream of the water-source river, and therefore, for the environmental remediation, the highest priority has been put to it among many facilities in the Mine. So far, basic concept has been examined and planning has been carried out for the remediation. Also, a great number of data has been acquired, and using the data, some remediation activities have already begun, including designing for the upstream part of the Mill Tailings Pond. According to the current plan, the Mill Tailings Pond will be covered by capping following dewatering and compressing of mill tailings. The capping is composed of “radon barrier” for lowering radon-gas dissipation and dose rate, and its protection layer. Natural materials are planned to be used for the capping to alleviate the future maintenance. After capping, data will be accumulated to verify the effectiveness of the capping, and if proved effective, it will be utilized for the capping of the downstream part.