Bibliographies thématiques / Bonding wire

Littérature scientifique sur le sujet « Bonding wire »

Auteur : Grafiati
Publié le 14 mars 2023

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Articles de revues sur le sujet "Bonding wire"

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Ko, Kuk Won, Dong Hyun Kim, Jiyeon Lee et Sangjoon Lee. « 3D Measurement System of Wire for Automatic Pull Test of Wire Bonding ». Journal of Institute of Control, Robotics and Systems 21, no 12 (1 décembre 2015) : 1130–35. http://dx.doi.org/10.5302/j.icros.2015.15.0131.

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Shirakawa, Shinji. « Bonding Wire ». Journal of SHM 9, no 4 (1993) : 30–38. http://dx.doi.org/10.5104/jiep1993.9.4_30.

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Levine, Lee. « Wire Bonding ». EDFA Technical Articles 18, no 1 (1 février 2016) : 22–28. http://dx.doi.org/10.31399/asm.edfa.2016-1.p022.

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Zhong, Z. W. « Wire bonding using insulated wire and new challenges in wire bonding ». Microelectronics International 25, no 2 (18 avril 2008) : 9–14. http://dx.doi.org/10.1108/13565360810875958.

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Zhong, Z. W. « Wire bonding using copper wire ». Microelectronics International 26, no 1 (23 janvier 2009) : 10–16. http://dx.doi.org/10.1108/13565360910923115.

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Qin, Ivy, Aashish Shah, Hui Xu, Bob Chylak et Nelson Wong. « Advances in Wire Bonding Technology for Different Bonding Wire Material ». International Symposium on Microelectronics 2015, no 1 (1 octobre 2015) : 000406–12. http://dx.doi.org/10.4071/isom-2015-wp33.

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With all the advances in 2.5D and 3D packaging, wire bonding is still the most popular interconnect technology and the workhorse of the industry. Wire bonding technology has been the lower cost solution comparing to flip chip. Wire bonding package cost is much reduced with the introduction of Copper wire bonding. Technology development and innovation in wire bonding provides new packaging solutions that improves performance and reduces cost. This paper reviews the recent innovations in ball bonding technology to provide optimized ball bonding solutions targeted for different bonding wire material. It examines the different challenges for the alternative wire types including Cu wire, Pd coated, and AuPd coated Cu wire and Ag Alloy wire. We will discuss key development in ball bonding equipment, process and material to overcome the challenges and provide robust low cost solutions. The advantages of each wire type are outlined, and guidelines to select the right bonding wire type per application requirements are provided.
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Zhou, Hongliang, Yingchong Zhang, Jun Cao, Chenghao Su, Chong Li, Andong Chang et Bin An. « Research Progress on Bonding Wire for Microelectronic Packaging ». Micromachines 14, no 2 (11 février 2023) : 432. http://dx.doi.org/10.3390/mi14020432.

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.
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Won, Rachel. « Wire-bonding assembly ». Nature Photonics 12, no 9 (29 août 2018) : 500. http://dx.doi.org/10.1038/s41566-018-0251-z.

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Mayer, Michael, et Yi-Shao Lai. « Copper Wire Bonding ». Microelectronics Reliability 51, no 1 (janvier 2011) : 1–2. http://dx.doi.org/10.1016/j.microrel.2010.12.004.

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Pan, Ming Qiang, Tao Chen, Li Guo Chen et Li Ning Sun. « Analysis of Broken Wires during Gold Wire Bonding Process ». Key Engineering Materials 503 (février 2012) : 298–302. http://dx.doi.org/10.4028/www.scientific.net/kem.503.298.

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Wire bonding is one of the critical technologies of devices production, assembly and packaging in the microelectronic and MEMS field. During bonding process, the gold wires break easily, because the wires are repeatedly operated with high-speed. Therefore, the experiments were performed to analyze bonding process and the reason causing wire break. The results show that it is critical to prevent the broken wire to control the pressure wire pressure, the speed and angle of the pulling wire structure, the clamp gap, the capillary tip gap, and discharging energy in bonding process. the broken wire doesn’t occurs when the pressure wire pressure, the speed of the pulling wire structure, the angle of the pulling wire structure, the clamp gap, the capillary tip gap, the time and the current are 3-5g, 5rad/s and 10rad, 0.1-0.3mm, 1mm, 35ms and 10mA , respectively.
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Thèses sur le sujet "Bonding wire"

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Suman, Shivesh K. « Characterization of temperature variation during the wire bonding process ». Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17560.

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Wennergren, Karl Fredrik. « Metal Filling of Through Silicon Vias (TSVs) using Wire Bonding Technology ». Thesis, KTH, Mikro- och nanosystemteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-145552.

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Through Silicon Vias (TSVs) are vertical interconnections providing the shortest possible signal paths between vertically stacked chips in 3D packaging. In this thesis, TSVs are fabricated and two novel approaches for the metal filling of TSVs are investigated. A wire bonder is utilized to apply TSV core material in the form of gold stud bumps. The metal filling approaches are carried out by 1) squeezing stud bumps down the TSV holes by utilizing a wafer bonder and 2) stacking stud bumps on the outer periphery of the TSV holes and thereby forcing the material further down. Both approaches have successfully filled TSV holes of varying depths and no voids have been observed. The squeezing approach reaches measured depths of up to 52.9 μm and the stacking approach reaches depths of up to 100 μm.
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Chan, Yu Hin. « Optimization of metallization and process variables in low temperature wire bonding technology / ». View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?MECH%202003%20CHAN.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 129-132). Also available in electronic version. Access restricted to campus users.
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Zhang, Xiaodong. « Characterization of copper diffusion in advanced packaging / ». View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?MECH%202007%20ZHANG.

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Auersperg, Jürgen, D. Breuer, K. V. Machani, Sven Rzepka et Bernd Michel. « FEA to Tackle Damage and Cracking Risks in BEoL Structures under Copper Wire Bonding Impact ». Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207250.

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With the recent increase in Gold (Au) wire cost Copper (Cu) wire becomes an attractive way to manage overall package cost. On the other hand, Copper wire bonding introduces much higher mechanical impact to underlying BEoL structures and actives because of the higher stiffness and lower ductility of Copper compared to Gold. These trends are accompanied by the application of new porous or nano-particle filled materials like low-k and ultra low-k materials for Back-end of Line (BEoL) layers of advanced CMOS technologies. As a result, higher delamination and cracking risks in BEoL structures underneath bonded areas represent an increasing challenge for the thermo-mechanical reliability requirements. To overcome the related reliability issues the authors performed a two level nonlinear FEM-simulation approach. Initially nonlinear axi-symmetric modeling and simulation of the copper bonding process are coupled with a spatial simulation model of the whole BeoL and bond pad structure. Cracking and delamination risks are estimated by a surface based cohesive contact approach and the utilization of a crushing foam constitutive material model for ultra low-k materials.
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Schatt, Nathan A. « Finite Element Modeling of Ultrasonic Wire Bonding on Polyvinyl Acetate-Nanocomposite Substrates ». Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396634471.

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Pei-FuChung et 鍾沛孚. « Wire bonding characteristics of 0.7mil Au-Pd-plated Cu wires ». Thesis, 2013. http://ndltd.ncl.edu.tw/handle/75255799222694720740.

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碩士
國立成功大學
工程科學系碩博士班
101
In semiconductor packaging industry, the wire bonding technology has been developed for a long time. Since the equipment and technology are more mature than the others, wire bonding technology is still the mainstream for packaging technology. For the material used in the process, copper wires have numerous advantages over gold wires. Copper wires can save the cost up to 30~50% compared with gold wires, and the high electrical conductivity, good thermal conductivity, high stability of wire and slower growth speed in intermetallic compound (IMC) are all the advantages making copper wires more favorable. The formation of the IMC can strengthen the bond, but the IMC layer has higher electric resistance. During the growth of the IMC, Kirkendall voids[31] will appear at the interface between the IMC layer and the wire, and the voids will enlarge to form cracks through heat treatment, thus leading to the deterioration of electrical contacts and the reduction of reliability of bondability. The materials used in this experiment are the 0.7mil Au-Pd-plated copper wires which are not yet on the market and the existing Pd-plated copper wires. The experimental results show that Au-Pd-plated copper wire has a better breaking load and better elongation than these of the Pd-plated copper wire. The micro-hardness test shows that Au-Pd-plated copper wire is softer than the Pd-plated copper wire. With the same forming gas flow rate, Au-Pd-plated copper wire has better FAB (Free Air Ball) formation roundness than the Pd-plated copper wire. This experiment also examines the coverage of the coating on the copper ball after the EFO (Electrical Flame-Off). By choosing seven different spots on Pd-plated copper wire for element analysis, it is observed that the surfaces are all covered with a layer of palladium, and there is no exposed Cu. Gold and palladium are also found on the surface of the Au-Pd-plated copper wire. The growth of IMCs (Intermetallic Compounds) test shows that the growth rate on Au-Pd-plated copper wire is the same as the Pd-plated copper wire. During the wire bonding process, the Pd-plated copper wire is found unstable in the formation of second bond stitch and on the joint with the finger. Moreover, the tails are cut-off too fast causing alarm of the equipment with short tail defect. However, the experiment result shows that with an extra layer of gold coated on the palladium layer, voids on the plating layer can be reduced and the work efficiency can be improved.
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Chiang, Tu-han, et 蔣篤翰. « LED Package Wire Bonding Performance Analysis ». Thesis, 2008. http://ndltd.ncl.edu.tw/handle/04921650589675330483.

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碩士
大同大學
機械工程學系(所)
96
Wire Bonding is the one of the major circuit connection methods in current electronic packaging processes, which can enable the completion of circuit connectivity for chips or wafers with packaging substrate or Lead frame so as to achieve the purpose of electronic signal transmission. Wire bonding is part of the electronic packaging process, and its major function is to ensure the signal transmission between the electronic components, therefore the good wire bonding quality can accurately in addition to effectively transmit signals as intended. Currently, the trending for LED packaging components are leaning towards thinner and smaller, in comparison to the vital role assumed by wire bonding in the integral LED packaging process. Thus, among all the wire bonding quality indices, the values from forces of pulling and pushing will be used as inspection values for parameter modifications or fine-tuning efforts. This research is primarily based on LED packaging and it applies the comparisons between traditional wire bonding approach (Single) with current wire bonding approach (BSOB), as well as through the experimentation method, it placed the inspection results from the pulling and pushing values under the application of control charts to prove that, by using BSOB approach, it would create trustworthy product quality. Lastly, this research intends to find out and come up with enhancement strategies in regard to the causes for negatively influencing the wire bonding fabrications. Finally, this research applies case study for negativity analysis to prove the importance of pulling and pushing forces.
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薛宇廷. « Study of Wire Bonding & ; ; Bonding Finger in Substrate of Semiconductor ». Thesis, 2013. http://ndltd.ncl.edu.tw/handle/63975762490733436657.

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碩士
逢甲大學
工業工程與系統管理學系
101
With the diversification of digital products such as computers and cell phone in recent years, the packaging process of semiconductor has evolved from the traditional technology to the development of high-precision and high-power miniaturized process. Semi-conductor packaging needs to achieve the goal of high reliability, good heat dissipation, and low manufacturing costs. Facing the fluctuation in customer demand and the shortening of life cycle product, cross-cutting and system integration are two important issues. The wire bonding step occupies a pivotal position in the packaging process. Due to the rapid development of the integrated circuit packaging technologies, the traditional wire bonders with low speed, low precision, and low stability, can no longer to meet the demand of the industry. So, using wire bonders with thermal ultrasound functions instead is a trend. The wire bonding design, however, has a close relationship with the UPH of the wire bonder. This issue is also investigated in this study.
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Hung, Chong-Wei, et 洪崇偉. « The Study for Reliability of Wire-bonding Process by Copper Wire ». Thesis, 2014. http://ndltd.ncl.edu.tw/handle/3qe2x3.

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碩士
國立高雄大學
電機工程學系碩士班
102
As technical developments progressed, semi-conductor packaging is now heading toward slender, high-density and high capillary count directions. At present, domestic package techniques are BGA(Ball Grid Array), QFP(Plastic Quad Flat Package), SOP(Small Out-Line Package), PLCC (Plastic Leaded Chip Carrier) and PDIP(PDIP Plastic Dual In-Line Package )based package techniques. Since BGA package technique generally involves solder ball arrayed at the base of chip base, solder ball replaces traditional lead frame surrounded by pins. One advantage of this type of package technique is that the No. of pins may increase with same size and area while the package area and weight are only half the QFP. It also has good electric and heat dissipation properties as well as package area reduction feature. Its demand and growth rate greatly exceed other package methods. Currently, most, information home electronic appliances and 3C products have adopted BGA package technique. This study aims is to pass reliability of wire-bonding process by copper wire. Based on the 3 quality characteristics of process intended for discussion, wire pull, ball shear , Internal Metal Coverage of the quality characteristics are obtained. Then, by use of Orthogonal array L9 and Reliability Temperature cycle Test, analysis why Internal Metal Coverage is the major factor to influence Open Test after Reliability . In addition, in order to pass reliability test, how to do good Internal Metal Coverage sample. The feasibility of this study method tested is further verified.
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Livres sur le sujet "Bonding wire"

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. Copper Wire Bonding. New York, NY : Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-5761-9.

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Harman, George G. Wire bonding in microelectronics : Materials, processes, reliability, and yield. 2e éd. New York : McGraw-Hill, 1997.

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Schwizer, Jürg. Force sensors for microelectronic packaging applications. Berlin : Springer, 2004.

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Prasad, Shankara K. Advanced wirebond interconnection technology. Boston : Kluwer Academic Publishers, 2004.

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Hager, Christian. Lifetime estimation of aluminum wire bonds based on computational plasticity. Konstanz : Hartung-Gorre, 2000.

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International Society for Hybrid Microelectronics., dir. Reliability and yield problems of wire bonding in microelectronics : The application of materials and interface science. Reston, Va : International Society for Hybrid Microelectronics, 1989.

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M, Mayer, et Brand Oliver 1964-, dir. Force sensors for microelectronic packaging applications. Berlin : Springer, 2005.

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Center for Women's Resources (Philippines) et International Consultation on Micro-Chips Technology (1986 Manila, Philippines). From bonding wires to banding women : Proceedings of the International Consultation on Micro-Chips Technology, Manila, Philippines, 1986. Quezon City : Center for Women's Resources, 1988.

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Copper Wire Bonding. Springer-Verlag New York Inc., 2013.

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Pecht, Michael G., ZhaoWei Zhong, Preeti S. Chauhan et Anupam Choubey. Copper Wire Bonding. Springer London, Limited, 2013.

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Chapitres de livres sur le sujet "Bonding wire"

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Kästle, Christopher, et Jörg Franke. « Wire Bonding ». Dans CIRP Encyclopedia of Production Engineering, 1–4. Berlin, Heidelberg : Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-642-35950-7_16839-1.

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Kästle, Christopher, et Jörg Franke. « Wire Bonding ». Dans CIRP Encyclopedia of Production Engineering, 1823–25. Berlin, Heidelberg : Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-53120-4_16839.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Bonding Process ». Dans Copper Wire Bonding, 11–38. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_2.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Bonding Metallurgies ». Dans Copper Wire Bonding, 39–56. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_3.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Copper Wire Bonding ». Dans Copper Wire Bonding, 1–9. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_1.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Wire Bond Evaluation ». Dans Copper Wire Bonding, 57–71. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_4.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Wire Bond Pads ». Dans Copper Wire Bonding, 111–31. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_7.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Thermal Reliability Tests ». Dans Copper Wire Bonding, 73–91. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_5.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Humidity and Electromigration Tests ». Dans Copper Wire Bonding, 93–109. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_6.

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Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong et Michael G. Pecht. « Concerns and Solutions ». Dans Copper Wire Bonding, 133–49. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_8.

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Actes de conférences sur le sujet "Bonding wire"

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Kai, Liao Jun, Liang Yi Hung, Li Wei Wu, Men Yeh Chiang, Don Son Jiang, C. M. Huang et Yu Po Wang. « Silver alloy wire bonding ». Dans 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC). IEEE, 2012. http://dx.doi.org/10.1109/ectc.2012.6248983.

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Novotny, M., J. Jankovsky, I. Szendiuch et Z. Barton. « Wire bonding power interconnection ». Dans 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684379.

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Pan, Yongjun, Fulong Zhu, Xinxin Lin, Jiaquan Tao, Liping He, Han Wang et Sheng Liu. « Comparing the copper and gold wire bonding during thermalsonic wire bonding process ». Dans 2016 17th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2016. http://dx.doi.org/10.1109/icept.2016.7583127.

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Shah, Aashish, Thomas Rockey, Hui Xu, Ivy Qin, Wu Jie, Oranna Yauw et Bob Chylak. « Advanced wire bonding technology for Ag wire ». Dans 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC). IEEE, 2015. http://dx.doi.org/10.1109/eptc.2015.7412367.

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Clauberg, Horst, Bob Chylak, Nelson Wong, Johnny Yeung et Eugen Milke. « Wire bonding with Pd-coated copper wire ». Dans 2010 IEEE CPMT Symposium Japan (Formerly VLSI Packaging Workshop of Japan). IEEE, 2010. http://dx.doi.org/10.1109/cpmtsympj.2010.5679678.

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Rongzhi Gao, Lei Han et Jue Zhong. « Experimental studies on bonding pressure in wire bonding ». Dans Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. IEEE, 2006. http://dx.doi.org/10.1109/hdp.2006.1707578.

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Srikanth, Narasimalu, J. Premkumar, M. Sivakumar, Y. M. Wong et C. J. Vath. « Effect of Wire Purity on Copper Wire Bonding ». Dans 2007 9th Electronics Packaging Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/eptc.2007.4469764.

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Manoharan, Subramani, Chandradip Patel et Patrick McCluskey. « Advancements in Silver Wire Bonding ». Dans ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74286.

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Silver is a leading competitor to gold and copper in fine pitch wire bonding used in the interconnection of microelectronic devices. Primary material for wire bonding has been gold, which gave way to copper in order for original equipment manufacturers to realize cost benefits. However, copper wire bonding has exhibited several reliability issues, especially in industrial and high temperature applications. Corrosion is the major problem, which was mitigated by coating the wire with palladium, which increased overall cost of production. Other concerns include harder free air ball (FAB) leading to under pad metallization cracking, smaller process window, excessive aluminum splash especially in fine pitch bonding, and lower throughput and yield arising from the hardness and stiffness of copper. Due to the above concerns, automotive, military and aerospace industries are still reluctant to fully adopt copper wire bonding. Light emitting diodes (LEDs) are also not manufactured with copper wires due to its low reflectance. Some of these industries are still using gold wire bonds in most of their packages, but are continually looking for an alternative. Silver wire bonds have good electrical and thermal conductivity, are less prone to corrosion than copper, have low melting points and comparable hardness to gold. Also, cost of silver has been shown to be similar to that of palladium coated copper wire, hence making it a good alternative. Silver wire bonding, a relatively new area of research, has attracted a lot of research focused on wire dopant material, bonding process, quality and reliability. This paper is aimed to serve as a comprehensive review of research done in this area, by summarizing the literature on silver wire bonding, establishing benefits and drawbacks over other wire bond materials and indicating reliability concerns along with failure modes and mechanisms.
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Ho, Hong Meng. « Advanced copper wire bonding technology ». Dans 2010 34th International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2010. http://dx.doi.org/10.1109/iemt.2010.5746772.

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Ruiz, A., E. Vega, R. Katiyar et R. Valentin. « Novel Enabling Wire Bonding Technology ». Dans 2007 Electronic Components and Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/ectc.2007.373837.

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