Littérature scientifique sur le sujet « BAND GAP REFERENCE CIRCUITS »
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Articles de revues sur le sujet "BAND GAP REFERENCE CIRCUITS"
AZAROV, Oleksiy, et Anna FIGAS. « THERMOSTABLE REFERENCE CURRENT AND VOLTAGE SOURCES FOR HIGH-LINEAR ANALOGUE-CODE-ANALOGUE SYSTEM ». Herald of Khmelnytskyi National University. Technical sciences 311, no 4 (août 2022) : 23–28. http://dx.doi.org/10.31891/2307-5732-2022-311-4-23-28.
Texte intégralZhang, Wei Juan, Yan Zhao, Ju Wang et Kun Li. « A Band-Gap Voltage Reference for LDO Circuit ». Applied Mechanics and Materials 599-601 (août 2014) : 626–30. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.626.
Texte intégralGrella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt et U. Paschen. « High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology ». Journal of Microelectronics and Electronic Packaging 10, no 2 (1 avril 2013) : 67–72. http://dx.doi.org/10.4071/imaps.374.
Texte intégralMarani, R., et A. G. Perri. « Review—Thermal Effects in the Design of CNTFET-Based Digital Circuits ». ECS Journal of Solid State Science and Technology 11, no 4 (1 avril 2022) : 041006. http://dx.doi.org/10.1149/2162-8777/ac63e6.
Texte intégralLi, Zheng Da, et Lin Xie. « One Kind of Band-Gap Voltage Reference Source with Piecewise High-Order Temperature Compensation and Power Supply Rejection Ratio ». Applied Mechanics and Materials 644-650 (septembre 2014) : 3575–78. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3575.
Texte intégralShrivastava, Amandeep, R. S. Gamad et R. C. Gurjar. « Design of Improved Band Gap Reference Circuit for CS-VCO Application Using 180nm CMOS Technology ». IOP Conference Series : Materials Science and Engineering 1272, no 1 (1 décembre 2022) : 012009. http://dx.doi.org/10.1088/1757-899x/1272/1/012009.
Texte intégralLiang, Chao-Jui, Chiu-Chiao Chung et Hongchin Lin. « A low-voltage band-gap reference circuit with second-order analyses ». International Journal of Circuit Theory and Applications 39, no 12 (12 juillet 2010) : 1247–56. http://dx.doi.org/10.1002/cta.699.
Texte intégralLi, Fan, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen et Wen Liu. « Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics ». Applied Sciences 11, no 24 (17 décembre 2021) : 12057. http://dx.doi.org/10.3390/app112412057.
Texte intégralMa, Bill, et Feng Qi Yu. « A 1.2-V 1.76-Ppm/°C Low Voltage CMOS Band-Gap Reference ». Applied Mechanics and Materials 303-306 (février 2013) : 1798–802. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1798.
Texte intégralHan, Yifeng, Mingjing Zhai et Junfeng Zhou. « A thermal protection module for automotive integrated circuits ». Modern Physics Letters B 31, no 19-21 (27 juillet 2017) : 1740097. http://dx.doi.org/10.1142/s0217984917400978.
Texte intégralThèses sur le sujet "BAND GAP REFERENCE CIRCUITS"
Bubla, Jiří. « Band Gap - přesná napěťová reference ». Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-217808.
Texte intégralKenyon, Eleazar Walter. « Low-noise circuitry for extreme environment detection systems implemented in SiGe BiCMOS technology ». Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44873.
Texte intégralKadaňka, Petr. « Návrh nízkošumové Band Gap reference v BCD procesu ». Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220280.
Texte intégralKim, Tae Hong. « Electromagnetic Band Gap (EBG) synthesis and its application in analog-to-digital converter load boards ». Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/22712.
Texte intégralBurress, Thomas Weston. « Mitigation of random and deterministic noise in mixed signal systems with examples in frequency synthesizer systems ». Thesis, Kansas State University, 2011. http://hdl.handle.net/2097/13537.
Texte intégralDepartment of Electrical and Computer Engineering
William B. Kuhn
RF frequency synthesizer systems are prevalent in today’s electronics. In a synthesizer there is a sensitive analog oscillator that may be affected by two different types of noise. The first is random noise injection from active devices. This results in phase noise in the synthesizer’s spectrum. The second noise source is deterministic. A digital frequency divider with high-amplitude switching is an example of such a deterministic source. This noise enters the system through various forms of electric or magnetic field coupling and manifests itself as spurs or pulling. Both forms of noise can adversely affect system performance. We will first summarize methods for reducing noise. These already known steps have to do with layout techniques, device geometry, and general synthesizer topologies. Then we will show ways to isolate noisy interfering circuits from the sensitive analog systems. Finally, we present some considerations for reducing the effects of random noise. A power supply filter can improve the effects of deterministic noise such as undesired signals on the supply line. We show several ways to improve the rejection of high frequency supply noise (characterized by the power supply rejection ratio or PSRR) through the design of a voltage regulator. The emphasis is on new techniques for obtaining good PSRR at S-band frequencies and above. To validate the techniques, we designed a regulator in Peregrine Semiconductor’s .25µm ULTRA CMOS Silicon on Sapphire process. It produces a 2.5V output with an input ranging from 2.6V to 5V and has a maximum current sourcing of 70mA. The regulator’s low drop out performance is 60mV with no load and it achieves a power supply ripple reduction of 29.8 dB at 500 MHz. To address random noise in synthesizers, the thesis provides preliminary investigation of an oscillator topology change that has been proposed in the literature. This proposed change reduces the phase noise of the oscillator within the overall system. A differential cross-coupled design is the usual topology of choice, but it is not optimal for noise performance. We investigate current noise injection in the traditional design and present an updated design that uses a differential Colpitts oscillator as an alternative to classic cross-coupled designs.
Brito, Davi Bibiano. « Metamaterial inspired improved antennas and circuits ». Universidade Federal do Rio Grande do Norte, 2010. http://repositorio.ufrn.br:8080/jspui/handle/123456789/15152.
Texte intégralCoordena??o de Aperfei?oamento de Pessoal de N?vel Superior
Metamaterials exhibiting negative refraction have attracted a great amount of attention in recent years mostly due to their exquisite electromagnetic properties. These materials are artificial structures that exhibit characteristics not found in nature. It is possible to obtain a metamaterial by combining artificial structures periodically. We investigated the unique properties of Split Ring Resonators, High impedance Surfaces and Frequency Selective Surfaces and composite metamaterials. We have successfully demonstrated the practical use of these structures in antennas and circuits. We experimentally confirmed that composite metamaterial can improve the performance of the structures considered in this thesis, at the frequencies where electromagnetic band gap transmission takes place
Huh, Suzanne Lynn. « Design of power delivery networks for noise suppression and isolation using power transmission lines ». Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42842.
Texte intégralSankaran, Nithya. « Electromagnetic coupling in multilayer thin-film organic packages with chip-last embedded actives ». Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/43621.
Texte intégralMITTAL, VIVEK. « DESIGN AND ANALYSIS OF BAND GAP REFERENCE CIRCUITS ». Thesis, 2018. http://dspace.dtu.ac.in:8080/jspui/handle/repository/16508.
Texte intégralChang, Wuchang, et 張武昌. « Design of low-power band-gap voltage reference circuits for low supply voltages ». Thesis, 2002. http://ndltd.ncl.edu.tw/handle/63027796637562889403.
Texte intégral國立中興大學
電機工程學系
90
Reference voltage generators are widely used in many applications from analog circuit to mixed-signal circuits such as ADC, DAC, DRAM and flash memories. These structures are required to provide a stable voltage reference with a low sensitivity to temperature and supply voltage. One of the most popular architecture is the band-gap reference (BGR). Due to the need of battery-operated systems for portability, low supply voltages and low power consumption will be the trends in future VLSI products. Two new band-gap reference (BGR) circuits operated at low supply voltages using 0.6mm CMOS technology are presented in this thesis. The chip area of the new BGR circuit is small. The operation voltage can be down to 1.2V, while the reference voltage (Vref) can be set to almost any values. The deviation of Vref is less than 18ppm/ o C for the temperature range from -40°C to 125°C. In order to reduce the current consumption, we propose to use switches to control the BGR circuit connected or disconnected with power supplies. When the system is in power-saving mode, the BGR circuit is disconnected from power supplies to reduce the current consumption.
Livres sur le sujet "BAND GAP REFERENCE CIRCUITS"
Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.
Trouver le texte intégralChapitres de livres sur le sujet "BAND GAP REFERENCE CIRCUITS"
Xu, Wendan, Donglai Xu et Ian French. « An Improved Band-Gap Voltage Reference Circuit Design for Multimedia VLSI Systems Integration Applications ». Dans Lecture Notes in Computer Science, 878–84. Berlin, Heidelberg : Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-25969-5_81.
Texte intégralLiu, Ai Qun. « Tunable Electromagnetic Band Gap Bandstop Filter ». Dans RF MEMS Switches and Integrated Switching Circuits, 133–58. Boston, MA : Springer US, 2010. http://dx.doi.org/10.1007/978-0-387-46262-2_6.
Texte intégralCasady, Jeffrey B. « Processing of Silicon Carbide for Devices and Circuits ». Dans Processing of Wide Band Gap Semiconductors, 178–249. Elsevier, 2000. http://dx.doi.org/10.1016/b978-081551439-8.50007-9.
Texte intégralBässler, H. « Excitonic Model versus Band Gap Model in Organic Materials ». Dans Reference Module in Materials Science and Materials Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-803581-8.03214-8.
Texte intégralAli, Mir S., Monalisa Adhikari, Jonathan T. Orasugh et Dipankar Chattopadhyay. « Synthesis and Photovoltaic Properties of Low Band Gap Polymer ». Dans Reference Module in Materials Science and Materials Engineering. Elsevier, 2022. http://dx.doi.org/10.1016/b978-0-12-820352-1.00264-9.
Texte intégralMukherjee, Moumita. « Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime : Device Reliability, Experimental Feasibility and Photo-sensitivity ». Dans Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems. InTech, 2010. http://dx.doi.org/10.5772/8751.
Texte intégralCrisci, Teresa, Luigi Moretti, Mariano Gioffrè et Maurizio Casalino. « Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials ». Dans Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99625.
Texte intégralActes de conférences sur le sujet "BAND GAP REFERENCE CIRCUITS"
Li, Da-Gang, Yuan-Jun Cen, Ping Yang, Yong-Kai Li, Xu Qi et Zhi-Kai Liao. « The Design of Low Temperature Coefficient Band-Gap Reference ». Dans 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM). IEEE, 2018. http://dx.doi.org/10.1109/icam.2018.8596482.
Texte intégralJahangir, Mohd Ziauddin, P. Chandrasekhar et N. V. Koteswara Rao. « Design and simulation of programmable band-gap reference circuit ». Dans 2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia). IEEE, 2015. http://dx.doi.org/10.1109/primeasia.2015.7450472.
Texte intégralLahiri, Abhirup, Pradeep Badrathwal, Nitin Jain et Kallol Chatterjee. « A 0.5V supply, 49nW band-gap reference and crystal oscillator in 40nm CMOS ». Dans 2017 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2017. http://dx.doi.org/10.1109/cicc.2017.7993603.
Texte intégralYuntao Liu, Xiaowei Liu et Liang Yin. « A CMOS band-gap voltage reference with low offset ». Dans 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734902.
Texte intégralHuang, Zhihao, Xiangdong Zhu et Zhiqiang Li. « Design of a High Precision Current Mode Band Gap Reference Circuit ». Dans 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE). IEEE, 2019. http://dx.doi.org/10.1109/eitce47263.2019.9095076.
Texte intégralRamasamy, S., B. Venkataramani et P. Meenatchisundaram. « A low power programmable band gap reference circuit with subthreshold MOSFETs ». Dans TENCON 2008 - 2008 IEEE Region 10 Conference (TENCON). IEEE, 2008. http://dx.doi.org/10.1109/tencon.2008.4766816.
Texte intégralGupte, Soniya, et Pradnya Zode. « Design of Resistorless Low Temperature Coefficient Band Gap Reference Bias Circuit ». Dans 2011 International Conference on Communication Systems and Network Technologies (CSNT). IEEE, 2011. http://dx.doi.org/10.1109/csnt.2011.87.
Texte intégralYu, Guoyi, et Xuecheng Zou. « A High Precision CMOS Current-mode Band-gap Voltage Reference ». Dans 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306410.
Texte intégralGhodeswar, Ujwala, G. G. Sarate et Pravin Dakhole. « Design of band gap reference circuit in 45nm for low voltage applications ». Dans THE 2ND UNIVERSITAS LAMPUNG INTERNATIONAL CONFERENCE ON SCIENCE, TECHNOLOGY, AND ENVIRONMENT (ULICoSTE) 2021. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0107007.
Texte intégralXu, Meihua, Jian Wu, Feng Ran et Tiezhu Li. « Design of a low voltage band-gap reference circuit for OLED-On-Silicon ». Dans 2008 International Conference on Electronic Packaging Technology & ; High Density Packaging (ICEPT-HDP). IEEE, 2008. http://dx.doi.org/10.1109/icept.2008.4607007.
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