Bibliographies thématiques / Band alignments

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Littérature scientifique sur le sujet « Band alignments »

Auteur : Grafiati
Publié le 21 décembre 2024

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Articles de revues sur le sujet "Band alignments"

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Xia, Xinyi, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann et S. J. Pearton. « Band Alignment of Al2O3 on α-(AlxGa1-x)2O3 ». ECS Journal of Solid State Science and Technology 11, no 2 (1 février 2022) : 025006. http://dx.doi.org/10.1149/2162-8777/ac546f.

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X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
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Tripathy, K. C., et R. Sahu. « Collective bands and yrast band alignments in 78Kr ». Nuclear Physics A 597, no 2 (janvier 1996) : 177–87. http://dx.doi.org/10.1016/0375-9474(95)00437-8.

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Gizon, J., D. Jerrestam, A. Gizon, M. Jozsa, R. Bark, B. Fogelberg, E. Ideguchi et al. « Alignments and band termination in99,100Ru ». Zeitschrift f�r Physik A Hadrons and Nuclei 345, no 3 (septembre 1993) : 335–36. http://dx.doi.org/10.1007/bf01280845.

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Zhao, Qiyi, Yaohui Guo, Yixuan Zhou, Zehan Yao, Zhaoyu Ren, Jintao Bai et Xinlong Xu. « Band alignments and heterostructures of monolayer transition metal trichalcogenides MX3 (M = Zr, Hf ; X = S, Se) and dichalcogenides MX2 (M = Tc, Re ; X=S, Se) for solar applications ». Nanoscale 10, no 7 (2018) : 3547–55. http://dx.doi.org/10.1039/c7nr08413g.

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The band gaps and work functions of monolayer IVB-VIA 2D TMTs MX3 and VIIB-VIA 2D TMDs MX2 are calculated and their band alignments and the relevant physical origins of the band alignments are investigated.
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Bhardwaj, Garima, Sandhya K., Richa Dolia, M. Abu-Samak, Shalendra Kumar et P. A. Alvi. « A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments ». Bulletin of Electrical Engineering and Informatics 7, no 1 (1 mars 2018) : 35–41. http://dx.doi.org/10.11591/eei.v7i1.872.

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In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.
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Shiel, Huw, Oliver S. Hutter, Laurie J. Phillips, Jack E. N. Swallow, Leanne A. H. Jones, Thomas J. Featherstone, Matthew J. Smiles et al. « Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells ». ACS Applied Energy Materials 3, no 12 (15 décembre 2020) : 11617–26. http://dx.doi.org/10.1021/acsaem.0c01477.

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Grodzicki, Miłosz, Agata K. Tołłoczko, Dominika Majchrzak, Detlef Hommel et Robert Kudrawiec. « Band Alignments of GeS and GeSe Materials ». Crystals 12, no 10 (20 octobre 2022) : 1492. http://dx.doi.org/10.3390/cryst12101492.

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Here we present new findings of a comprehensive study of the fundamental physicochemical properties for GeS and GeSe in bulk form. UV and X-ray photoelectron spectroscopies (UPS/XPS) were employed for the experiments, which were carried out on in situ cleaned (100) surfaces free from contamination. This allowed to obtain reliable results, also unchanged by effects related to charging of the samples. The work functions, electron affinities and ionization energies as well as core level lines were found. The band gaps of the investigated materials were determined by photoreflectance and optical absorption methods. As a result, band energy diagrams relative to the vacuum level for GeS and GeSe were constructed. The diagrams provide information about the valence and conduction band offsets, crucial for the design of various electronic devices and semiconducting heterostructures.
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Gutleben, C. D. « Band alignments of the platinum/SrBi2Ta2O9 interface ». Applied Physics Letters 71, no 23 (8 décembre 1997) : 3444–46. http://dx.doi.org/10.1063/1.120402.

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Riley, M. A., T. B. Brown, N. R. Johnson, Y. A. Akovali, C. Baktash, M. L. Halbert, D. C. Hensley et al. « Alignments, shape changes, and band terminations inTm157 ». Physical Review C 51, no 3 (1 mars 1995) : 1234–46. http://dx.doi.org/10.1103/physrevc.51.1234.

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Bjaalie, Lars, Angelica Azcatl, Stephen McDonnell, Christopher R. Freeze, Susanne Stemmer, Robert M. Wallace et Chris G. Van de Walle. « Band alignments between SmTiO3, GdTiO3, and SrTiO3 ». Journal of Vacuum Science & ; Technology A : Vacuum, Surfaces, and Films 34, no 6 (novembre 2016) : 061102. http://dx.doi.org/10.1116/1.4963833.

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Thèses sur le sujet "Band alignments"

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Turcu, Mircea Cassian. « Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys ». Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2004. http://nbn-resolving.de/urn:nbn:de:swb:14-1086247686828-95497.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect distributions involving donors at the CdS/absorber interface and deep acceptors in the chalcopyrite bulk, increase upon alloying CuInSe2 with S. The band alignments within the Cu(In1-xGax)(Se1-ySy)2 system are determined using the energy position of the bulk acceptor state as a reference. The band gap enlargement under Ga alloying is accommodated almost exclusively in the rise of the conduction band edge, whereas the increase of band gap upon alloying with S is shared between comparable valence and conduction band offsets. The extrapolated band discontinuities [delta]EV(CuInSe2/CuInS2) = -0.23 eV, [delta]EC(CuInSe2/CuInS2) = 0.21 eV, [delta]EV(CuInSe2/CuGaSe2) = 0.036 eV, and [delta]EC(CuInSe2/CuGaSe2) = 0.7 eV are in good agreement with theoretical predictions. Current-voltage analysis of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 devices reveals recombination barriers which follow the band gap energy of the absorber irrespective of alloy composition, as expected for dominant recombination in the chalcopyrite bulk. In turn, the recombination at the active junction interface prevails in Cu-rich devices which display substantially smaller barriers when compared to the band gap energy of the absorber. The result indicates that the Cu-stoichiometry is the driving compositional parameter for the charge carrier recombination in the chalcopyrite heterojunctions under investigations.
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Turcu, Mircea Cassian. « Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys ». Doctoral thesis, Technische Universität Dresden, 2003. https://tud.qucosa.de/id/qucosa%3A24342.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect distributions involving donors at the CdS/absorber interface and deep acceptors in the chalcopyrite bulk, increase upon alloying CuInSe2 with S. The band alignments within the Cu(In1-xGax)(Se1-ySy)2 system are determined using the energy position of the bulk acceptor state as a reference. The band gap enlargement under Ga alloying is accommodated almost exclusively in the rise of the conduction band edge, whereas the increase of band gap upon alloying with S is shared between comparable valence and conduction band offsets. The extrapolated band discontinuities [delta]EV(CuInSe2/CuInS2) = -0.23 eV, [delta]EC(CuInSe2/CuInS2) = 0.21 eV, [delta]EV(CuInSe2/CuGaSe2) = 0.036 eV, and [delta]EC(CuInSe2/CuGaSe2) = 0.7 eV are in good agreement with theoretical predictions. Current-voltage analysis of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 devices reveals recombination barriers which follow the band gap energy of the absorber irrespective of alloy composition, as expected for dominant recombination in the chalcopyrite bulk. In turn, the recombination at the active junction interface prevails in Cu-rich devices which display substantially smaller barriers when compared to the band gap energy of the absorber. The result indicates that the Cu-stoichiometry is the driving compositional parameter for the charge carrier recombination in the chalcopyrite heterojunctions under investigations.
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Marginean, Camelia. « ENERGY BAND ALIGNMENTS AT METAL/MOLECULAR LAYER/SEMICONDUCTOR AND METAL/QUANTUM DOT INTERFACES USING BALLISTIC ELECTRON EMISSION MICROSCOPY ». The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1243454379.

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Turcu, Mircea C. [Verfasser]. « Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys / Mircea C Turcu ». Aachen : Shaker, 2004. http://d-nb.info/1170529550/34.

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Luo, Yandi. « Development of new buffer layers and rapid annealing process for efficient Sb₂Se₃ thin-film solar cells ». Electronic Thesis or Diss., Université de Rennes (2023-....), 2024. http://www.theses.fr/2024URENS039.

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Dans ce travail de thèse, le comportement de l'interface de l'hétérojonction, le processus de croissance des grains cristallins et la couche tampon des cellules solaires à base de Sb₂2Se₃ ont été étudiés. La qualité de l'absorbeur et l'alignement des bandes d'énergie sont identifiés comme des paramètres clés pour réduire la densité de défauts et pour faciliter la séparation et le transport des porteurs de charge photogénérés. Une stratégie de dopage d'Al³⁺ dans la couche tampon de CdS a été introduite dans les cellules solaires Sb₂2Se₃. L'alignement des bandes d'énergie et la qualité de l'interface p-n ont été considérablement améliorés. Une courbure de bandes type "Spike-like" a été obtenue pour la meilleure cellule solaire avec un rendement de 8,41%. Deuxièmement, un procédé de recuit thermique rapide a également été développé et optimisé afin d'améliorer la qualité de la couche absorbeur de Sb₂2Se₃ avec une densité de défauts réduite. Le rendement des cellules solaires est augmenté à 9,03%. De plus, nous avons essayé de remplacer la couche tampon CdS toxique par un film ZnSnO respectueux de l'environnement avec en plus un band-gap plus large. Un rendement intéressant de 3,44% a été obtenue pour ces cellules solaires de Sb₂2Se₃ sans Cd
In this thesis, heterojunction interface behavior, grain growth process and alternative buffer layer of Sb₂Se₃ based solar cells were investigated. The absorber quality and the band alignment are identified as key parameters for reducing defect density and for facilitating the separation and the transport of photogenerated charge carriers. A strategy of Al³⁺ doping into the CdS buffer layer was introduced in Sb₂Se₃ solar cells. The band alignment and the interface quality have been significantly improved. A “spike-like” structure was obtained for the best device with an efficiency of 8.41%. Secondly, a rapid thermal annealing process has also been developed and optimized in order to improve the quality of Sb₂Se₃ absorber film with reduced defect density. The efficiency of the Sb₂Se₃ solar cells is increased to 9.03%. In addition, we have tried to replace the toxic CdS buffer layer with an environmentally friendly ZnSnO film with moreover a wider band gap. An interesting power conversion efficiency of 3.44% was achieved for the Cd-free Sb₂Se₃ thin-film solar cells
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Reinhart, Christoph F. « Type II band alignment in Sl¦1¦-¦xGe¦x/Sl(001) quantum wells ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq24230.pdf.

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GIAMPIETRI, ALESSIO. « GROWTH, LOCAL STRUCTURAL AND ELECTRONIC PROPERTIES, AND BAND ALIGNMENT AT SRTIO3-BASED ALL-OXIDE HETEROJUNCTIONS ». Doctoral thesis, Università degli Studi di Milano, 2017. http://hdl.handle.net/2434/476679.

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Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase of research on oxide heterojunctions, which are now produced with unprecedented quality. Applications of these systems in the field of electronics, photovoltaics and photocatalysis strongly rely on the capability to master band gap engineering on the atomic scale. Strontium titanate (SrTiO3) is the substrate of choice commonly used in the production of all-oxide heterostructures, as in many cases these systems display a two dimensional electron gas (2DEG) confined at the interface, such as in the LaAlO3/SrTiO3 junction. The band offsets at the interface determine on which of the constituent materials the 2DEG will be confined, and provide additional information on the degree of confinement as well, so the study of the band alignment in oxide-based heterostructures is of crucial importance. Novel properties and functionalities can be achieved upon substitution of LaAlO3 with other oxide materials, an example being the BiFeO3 perovskite. In fact, BiFeO3 is a multiferroic material, and a complete control of the BiFeO3/SrTiO3 heterostructure may allow the tuning of the 2DEG at the interface through the application of an external electric or magnetic field. A 2DEG is also observed in the Al2O3/SrTiO3 junction, which show electron mobilities greater than those previously measured in perovskite-based heterojunctions. Despite in many structures the 2DEG is not observed, different interesting applications can still be obtained, such as in the CuO/SrTiO3 heterostructure, which is a promising material for the production of solar cells and for photoelectrochemical water splitting applications. The main objective of this work is to demonstrate the growth of high quality BiFeO3/SrTiO3, Al2O3/SrTiO3 and CuO/SrTiO3 heterostructures by off-axis sputtering, and to provide a detailed analysis of the interface properties. The band alignment at the interface is thus measured and discussed for each of these materials.
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Azemi, Elheme, et Saimir Bala. « Exploring BPM adoption and strategic alignment of processes at Raiffeisen Bank Kosovo ». Jan vom Brocke, Jan Mendling, Michael Rosemann, 2019. http://epub.wu.ac.at/7176/1/paper4.pdf.

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Situation faced: Raiffeisen Bank Kosovo, as a subsidiary of Raiffeisen BankInternational AG, providesa wide range of banking products and services to all categories of customers in the private individual and business segments. In the first six months of 2018, the profit of the Bank was 11 Million Euro, being the highest in the banking market. The on-line banking channels has increased significantly and today the customers chose to do more than 80% of transactions through E-Banking, mobile phone,or ATMs. Raiffeisen Bank has started to adopt BPM since 2006 as a systemic and structured approach to analyze, improve, control, and manage processes with the aim to improve the quality of products and services. But, how well is BPM adapted and implemented in the bank, and what is the impact of BPM to the strategic goals? b)Action taken: This paper tackles the problem from two angles. First, a literature review is used to clarify the concept of BPM its scope. Second, semistructured interviews were used to collect data from nine participants covering high positions in Raiffeisen Bank Kosovo. In addition, the Research ffered both an evaluation of the significant aspects of the implementation process, and examinedthe key factors effects on alignment of BPM with organization strategy. c)Results achieved: his study unveils that BPM is well understood and is con-sidered an important practice within the bank. Its implementation is familiar to the top management. Especially, process visualization is a considered a core element within BPM projects. Existing project can further benefit from BPM by applying process ownership and defining responsibilities within the end to end processes in every department were these processes are performed. Moreover, this study collects evidence that strategy objectives can be led by BPM. d)Lessons learned: Experience has taught that there are many challenges whenapplying BPM initiatives. However, once these are applied, they help achieving strategic objectives. Two main challenges of implementing BPM were related to lack of proper IT support and budget needed to cover staff training. This paper recommends that BPM initiatives be strategy driven. It should be treated in a holistic way, including several methodologies like Six Sigma, Lean, and Agile. In this way, the Bank is lead towards thinking how its product or services are delivered to the customers.
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Huang, Jianqiu. « First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces : An Investigation of Dielectric Breakdown ». Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/95967.

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Oxide dielectric breakdown is an old problem that has been studied over decades. It causes power dissipations and irreversible damage to the electronic devices. The aggressive downscaling of the device size exponentially increases the leakage current density, which also raises the risk of dielectric breakdown. It has been proposed that point defects, current leakages, impurity diffusions, etc. all contribute to the change of oxide chemical composition and ultimately lead to the dielectric breakdown. However, the conclusive cause and a clear understanding of the entire process of dielectric breakdown are still under debate. In this research, the electronic structure at metal/oxide interfaces is studied using first-principle calculations within the framework of Density Functional Theory (DFT) to investigate any possible key signature that would trigger the dielectric breakdown. A classical band alignment method, the Van de Walle method, is applied to the case study of the Al/crystal-SiO2 (Al/c-SiO2) interface. Point defects, such as oxygen vacancy (VO) and hydrogen impurity (IH), are introduced into the Al/c-SiO2 interface to study the effects on band offset and electronic structure caused by point defects at metal/oxide interfaces. It is shown that the bonding chemistry at metal/oxide interfaces, which is mainly ionic bond, polarizes the interface. It results in many interface effects such as the interface dipole, built-in voltage, band bending, etc. Charge density analysis also indicates that the interface can localize charge due to such ionic bonding. It is also found that VO at the interface traps metal electrons which closes the open -sp3 orbital. The analysis on local potential shows that the metal potential penetrates through a few layers of oxide starting from the interface, which metalizes the interfacial region and induces unoccupied states in the oxide band gap. In addition, it is shown that higher oxygen content at metal/oxide interfaces minimizes such metal potential invasion. In addition, an oxygen vacancy is created at multiple sites through the Al/c-SiO2 and Al/a-SiO2 interface systems, separately. The oxygen local pressure is also calculated before its removal using Quantum Stress Density theory. Correlations among electronic structure, stress density, and vacancy formation energy are found, which provide informative insights into the defect generation controlling and dielectric breakdown analysis. A new band alignment approach based on the projection of plane-waves (PWs) into the space-dependent atomic orbital (LCAO) basis is presented and tested against classical band offset methods -- the Van de Walle method. It is found that the new band alignment approach can provide a quantitative and reliable band alignment and can be applied to the heterojunctions consisting of amorphous materials. The new band alignment approach reveals the real-space dependency of the electronic structure at interfaces. In addition, it includes all interface effects, such as the interface dipole, built-in voltage, virtual oxide thinning, and band deformation, which cannot be derived using classical band offset methods. This new band alignment approach is applied to the case study of both the Al/amorphous-SiO2 (Al/a-SiO2) interface and the Al/c-SiO2. We have found that at extremely low dimensions, the reduction of the insulator character due to the virtual oxide thinning is a pure quantum effect. I highlight that the quantum tunneling current leakage is more critical than the decrease of the potential barrier height on the failure of the devices.
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Platzer-Björkman, Charlotte. « Band Alignment Between ZnO-Based and Cu(In,Ga)Se2 Thin Films for High Efficiency Solar Cells ». Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6263.

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Thin-film solar cells based on Cu(In,Ga)Se2 contain a thin buffer layer of CdS in their standard configuration. In order to avoid cadmium in the device for environmental reasons, Cd-free alternatives are investigated. In this thesis, ZnO-based films, containing Mg or S, grown by atomic layer deposition (ALD), are shown to be viable alternatives to CdS. The CdS is an n-type semiconductor, which together with the n-type ZnO top-contact layers form the pn-junction with the p-type Cu(In,Ga)Se2. From device modeling it is known that a buffer layer conduction band (CB) position of 0-0.4 eV above that of the Cu(In,Ga)Se2 layer is consistent with high photovoltaic performance. For the Cu(In,Ga)Se2/ZnO interface this position is measured by photoelectron spectroscopy and optical methods to –0.2 eV, resulting in increased interface recombination. By including sulfur into ZnO, a favorable CB position to Cu(In,Ga)Se2 can be obtained for appropriate sulfur contents, and device efficiencies of up to 16.4% are demonstrated in this work. From theoretical calculations and photoelectron spectroscopy measurements, the shift in the valence and conduction bands of Zn(O,S) are shown to be non-linear with respect to the sulfur content, resulting in a large band gap bowing. ALD is a suitable technique for buffer layer deposition since conformal coverage can be obtained even for very thin films and at low deposition temperatures. However, deposition of Zn(O,S) is shown to deviate from an ideal ALD process with much larger sulfur content in the films than expected from the precursor pulsing ratios and with a clear increase of sulfur towards the Cu(In,Ga)Se2 layer. For (Zn,Mg)O, single-phase ZnO-type films are obtained for Mg/(Zn+Mg) < 0.2. In this region, the band gap increases almost linearly with the Mg content resulting in an improved CB alignment at the heterojunction interface with Cu(In,Ga)Se2 and high device efficiencies of up to 14.1%.
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Livres sur le sujet "Band alignments"

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Yoshitake, Michiko. Work Function and Band Alignment of Electrode Materials. Tokyo : Springer Japan, 2021. http://dx.doi.org/10.1007/978-4-431-56898-8.

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Yoshitake, Michiko. Work Function and Band Alignment of Electrode Materials : The Art of Interface Potential for Electronic Devices, Solar Cells, and Batteries. Springer Japan, 2020.

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Chapitres de livres sur le sujet "Band alignments"

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Moore, Karen J. « Optical Properties and Band Alignments of III-V Heterostructures ». Dans NATO ASI Series, 273–92. Boston, MA : Springer US, 1989. http://dx.doi.org/10.1007/978-1-4757-6565-6_17.

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Kheyraddini Mousavi, Arash, Zayd Chad Leseman, Manuel L. B. Palacio, Bharat Bhushan, Scott R. Schricker, Vishnu-Baba Sundaresan, Stephen Andrew Sarles et al. « Band Alignment ». Dans Encyclopedia of Nanotechnology, 173. Dordrecht : Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100049.

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Weiland, Conan, Abdul K. Rumaiz et Joseph C. Woicik. « HAXPES Measurements of Heterojunction Band Alignment ». Dans Springer Series in Surface Sciences, 381–405. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24043-5_15.

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Nguyen, Nhan. « Band Alignment Measurement by Internal Photoemission Spectroscopy ». Dans Metrology and Diagnostic Techniques for Nanoelectronics, 891–929. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742 : CRC Press, 2016. http://dx.doi.org/10.1201/9781315185385-20.

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Yoshitake, Michiko. « Modification of Band Alignment via Work Function Control ». Dans NIMS Monographs, 97–112. Tokyo : Springer Japan, 2020. http://dx.doi.org/10.1007/978-4-431-56898-8_5.

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Godo, K., M. M. Cho, J. H. Chang, S. K. Hong, H. Makino, T. Yao, M. Y. Shen et T. Goto. « Optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures ». Dans Springer Proceedings in Physics, 455–56. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_212.

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Kahraman, Fatih, et Muhittin Gökmen. « Illumination Invariant Face Alignment Using Multi-band Active Appearance Model ». Dans Lecture Notes in Computer Science, 118–27. Berlin, Heidelberg : Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/11590316_15.

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Yoshitake, Michiko. « Correction to : Work Function and Band Alignment of Electrode Materials ». Dans NIMS Monographs, C1—C2. Tokyo : Springer Japan, 2021. http://dx.doi.org/10.1007/978-4-431-56898-8_8.

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Kong, Xianghua, Cong Shen et Jijun Tang. « CUK-Band : A CUDA-Based Multiple Genomic Sequence Alignment on GPU ». Dans Advanced Intelligent Computing in Bioinformatics, 84–95. Singapore : Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-5692-6_8.

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Afanas'ev, Valeri V., Michel Houssa et Andre Stesmans. « High-k Insulating Films on Semiconductors and Metals : General Trends in Electron Band Alignment ». Dans High-k Gate Dielectrics for CMOS Technology, 273–92. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646340.ch8.

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Actes de conférences sur le sujet "Band alignments"

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Alo, Arthur, Luana A. Reis, Leonardo W. T. Barros, Gabriel Nagamine, Jonathan C. Lemus, Josep Planelles, José L. Movilla et al. « Role of Band Alignment on the Two-Photon Absorption of Nanocrystal Heterostructures ». Dans CLEO : Applications and Technology, JTu2A.133. Washington, D.C. : Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.133.

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The influence from different band alignment of nanocrystal heterostructures on their two-photon absorption (2PA) is discussed, showing the possibility to increase the 2PA cross-section by one order of magnitude without significantly changing the emission spectra.
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Zhou, Xiangyu, Qiao He, Yixuan Huang et Jiang Wu. « Perovskite photodetectors with regulated band alignment engineering by bridging molecules ». Dans Optoelectronic Devices and Integration XIII, sous la direction de Baojun Li, Changyuan Yu, Xuping Zhang et Xinliang Zhang, 4. SPIE, 2024. http://dx.doi.org/10.1117/12.3034535.

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Borchard, Philipp, Abhinav Parameswaran, May Ling Har, Heather Shannon, Aaron Jensen, Thomas Antonsen, Brian Beaudoin et John Petillo. « Fabrication of W-Band Traveling Wave Tube Amplifier Beamstick Using Precision Alignment Techniques ». Dans 2024 Joint International Vacuum Electronics Conference and International Vacuum Electron Sources Conference (IVEC + IVESC), 01–02. IEEE, 2024. http://dx.doi.org/10.1109/ivecivesc60838.2024.10694878.

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Hammoud, Hasan Abed Al Kader, Umberto Michieli, Fabio Pizzati, Philip Torr, Adel Bibi, Bernard Ghanem et Mete Ozay. « Model Merging and Safety Alignment : One Bad Model Spoils the Bunch ». Dans Findings of the Association for Computational Linguistics : EMNLP 2024, 13033–46. Stroudsburg, PA, USA : Association for Computational Linguistics, 2024. http://dx.doi.org/10.18653/v1/2024.findings-emnlp.762.

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Robertson, J., et Y. Guo. « Schottky Barrier Heights and Band Alignments in Transition Metal Dichalcogenides ». Dans 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-2-6.

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Lyons, John L., Darshana Wickramaratne et Joel B. Varley. « Band alignments and doping strategies in orthorhombic and monoclinic AlGO alloys ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2588842.

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Barre, Elyse. « Electronic band alignments in transition metal dichalcogenides heterobilayers under optical excitation ». Dans Quantum Sensing and Nano Electronics and Photonics XX, sous la direction de Manijeh Razeghi, Giti A. Khodaparast et Miriam S. Vitiello. SPIE, 2024. http://dx.doi.org/10.1117/12.3001966.

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Jacobs, D. C., R. J. Madix et R. N. Zare. « Reduction of 1 + 1 REMPI spectra to population distributions : saturation and intermediate state alignment effects ». Dans International Laser Science Conference. Washington, D.C. : Optica Publishing Group, 1986. http://dx.doi.org/10.1364/ils.1986.ff2.

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A two-step methodology is presented for extracting ground state population distributions and alignment factors from 1 + 1 resonance-enhanced multiphoton ionization (REMPI) spectra. In the first step the ion signal is corrected for variation with laser intensity on a shot-to-shot basis, generating an isopower spectrum. In the second step populations and alignments are derived from the isopower spectrum by correcting for the interdependent effects of saturation and intermediate state alignment. Both classical and quantum-mechanical models are presented and their attributes are noted. This analysis procedure is applied to a room temperature thermal distribution of nitric oxide using the 1 + 1 REMPI process in which lines of the NO A2Σ+—X2Π (0,0) band constitute the resonant transition. The present treatment is able to recover the known rovibrational population distribution, independent of branch choice, over a wide range of practical operating conditions.
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Iutzi, Ryan, Christopher Heidelberger et Eugene Fitzgerald. « Defect and temperature dependence of tunneling in InGaAs/GaAsSb heterojunctions with varying band alignments ». Dans 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S). IEEE, 2015. http://dx.doi.org/10.1109/e3s.2015.7336820.

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Lin, Shih-Yen, Wei-Hsun Lin, Chi-Che Tseng et Shu-Han Chen. « GaSb/GaAs quantum dots with type-II band alignments prepared by molecular beam epitaxy for device applications ». Dans SPIE OPTO, sous la direction de Kurt G. Eyink, Frank Szmulowicz et Diana L. Huffaker. SPIE, 2011. http://dx.doi.org/10.1117/12.873657.

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Rapports d'organisations sur le sujet "Band alignments"

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Jones, Roger M. Optimized Wakefield Suppression & ; Emittance Dilution-Imposed Alignment Tolerances in X-Band Accelerating Structures for the JLC/NLC. Office of Scientific and Technical Information (OSTI), mai 2003. http://dx.doi.org/10.2172/813184.

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Maqueda Gassos, Stephany, Ernesto Cuestas, Maria Clemencia Monroy, Henry Dyer, Julie King, Alejandro Soriano, Gabriela Pérez et Carolina Romero. Independent Country Program Review : Bahamas 2018-2022. Inter-American Development Bank, août 2023. http://dx.doi.org/10.18235/0005081.

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This Independent Country Program Review (ICPR) analyzes the Inter-American Development Bank (IDB) Group's country strategy (CS) and country program (CP) with The Bahamas during the 2018-2022 period. ICPRs assess CS relevance and provide aggregate information on the alignment and execution of the corresponding CP as well as, data permitting, the CP's contribution to CS strategic objectives. ICPRs are primarily addressed to the IDB Group's Board of Executive Directors. They seek to provide the Board with relevant information to consider in the upcoming CS.
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Khadr, Ali, Oliver Peña-Habib et Stefania De Santis. Independent Country Program Review Trinidad and Tobago 2016-2020. Inter-American Development Bank, avril 2021. http://dx.doi.org/10.18235/0003852.

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This Independent Country Program Review (ICPR) covers the Inter-American Development Bank (IDB) Group's country strategy (CS) and program in Trinidad and Tobago (T&T) over the period 2016-2020. ICPRs assess the relevance of a CS and, data permitting, provide aggregate information on the alignment and execution of the corresponding country program. ICPRs are primarily addressed to the IDB Group's Boards of Executive Directors (BoD). They seek to provide the BoD with relevant information, otherwise not readily available to them, to inform their consideration of the upcoming IDB Group CSs.
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Rodrigo,, Maria Fernanda, Gunnar Gotz, Oliver Peña-Habib, Mario Julián Loayza et Andreia Barcellos. Independent Country Program Review Peru 2017-2021. Inter-American Development Bank, juillet 2022. http://dx.doi.org/10.18235/0004384.

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This Independent Country Program Review (ICPR) analyzes the Inter-American Development Bank (IDB) Group's strategy and program in Peru during the 2017-2021 period. ICPRs assess the relevance of the Bank's Country Strategy (CS) and provide additional information on the alignment and execution of the program. If the available information allows, ICPRs also report on progress toward the objectives set by the IDB Group in its Country Strategy. With this product, OVE seeks to provide the Boards of Executive Directors of the IDB and IDB Invest with useful information prior to their consideration of the new Country Strategy.
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Riley, Mark, et Akis Pipidis. The Mechanical Analogue of the "Backbending" Phenomenon in Nuclear-structure Physics. Florida State University, mai 2008. http://dx.doi.org/10.33009/fsu_physics-backbending.

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This short pedagogical movie illustrates an effect in nuclear physics called backbending which was first observed in the study of the rotational behavior of rapidly rotating rare-earth nuclei in Stockholm, Sweden in 1971. The video contains a mechanical analog utilizing rare-earth magnets and rotating gyroscopes on a turntable along with some historic spectra and papers associated with this landmark discovery together with its explanation in terms of the Coriolis induced uncoupling and rotational alignment of a specific pair of particles occupying high-j intruder orbitals. Thus backbending represents a crossing in energy of the groundstate, or vacuum, rotational band by another band which has two unpaired high-j nucleons (two quasi-particles) with their individual angular momenta aligned with the rotation axis of the rapidly rotating nucleus. Backbending was a major surprise which pushed the field of nuclear structure physics forward but which is now sufficiently well understood that it can be used as a precision spectroscopic tool providing useful insight for example, into nuclear pairing correlations and changes in the latter due to blocking effects and quasi-particle seniority, nuclear deformation, the excited configurations of particular rotational structures and the placement of proton and neutron intruder orbitals at the Fermi surface.
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Gonzalez Diez, Verónica M., Ernesto Cuestas, Andrea Rojas, Priscila Vera, Lucero Vargas et Stefania De Santis. Independent Country Program Review Chile 2019-2022. Inter-American Development Bank, septembre 2022. http://dx.doi.org/10.18235/0004441.

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This Independent Country Program Review (ICPR) analyzes the Inter-American Development Bank (IDB) Group's strategy and program in Chile during the 2019-2022 period. ICPRs assess the relevance of the Bank's Country Strategy (CS) and provide additional information on the alignment and execution of the program. If the available information allows, ICPRs also report on the progress and contribution towards achievement of the objectives set by the IDB Group in the CS. With this product, the Office of Evaluation and Oversight (OVE) seeks to provide the Boards of Executive Directors of the IDB and IDB Invest with useful information for the analysis of Country Strategies submitted to them for consideration.
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Arévalo, Josette, Priscila Vera et Stefania De Santis. Independent Country Program Review Guyana 2017-2021. Inter-American Development Bank, septembre 2022. http://dx.doi.org/10.18235/0004471.

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This Independent Country Program Review (ICPR) covers the Bank's Country Strategy (EBP) of the Inter-American Development Bank (IDB) Group and the program in Guyana during the period 2017-2021. The ICPRs assess the relevance of the country strategy, provide aggregate information on the alignment and execution of the corresponding country program and, if the data allows it, its contribution to strategic objectives (SO) established in the country strategy. The ICPRs are primarily directed at the IDB Group's Boards of Executive Directors. They seek to provide the Boards with relevant information, which would otherwise not be available to them, for the analysis of the EBPs submitted for their consideration.
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West, George, Marco Velarde et Alejandro Soriano. IDB-9 : Operational Performance and Budget. Inter-American Development Bank, mars 2013. http://dx.doi.org/10.18235/0010526.

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In IDB-9 the Board of Governors of the Inter-American Development Bank (IDB) mandated the adoption of a results-based budgeting process (RBB) that would be aligned to and would help achieve the key performance targets of the Corporate Results Framework (CRF), as well as improve accountability and transparency. In addition, they mandated the use of a Balanced Score Card Performance Management System (BSC) that would incorporate the results from an External Feedback System (EFS). The Governors also requested that the Bank continue its efforts to improve organizational efficiency. The IDB has made significant progress in improving the quality and availability of information related to the budget and the associated work program, and in developing and enhancing the systems to support the budget planning and monitoring process. Many of the actions defined in the RBB Framework document can be considered complete from a technical perspective, but the RBB is still a work in process. One major area that RBB planners underestimated was the effort and time it would take to create an organization that uses data to manage for results. This effort must involve all levels of Management and be accompanied by appropriate incentives. Work on this cultural change has started but will extend beyond the planned three-year RBB implementation period. The BSC effort resulted in organizational learning and the development of a number of performance indicators, but it failed to achieve its objective of implementing a BSC that would provide the Bank with a Strategic Planning and Management system to help ensure the alignment of business activities with organizational strategy and provide a focused, comprehensive perspective of the Bank¿s organizational performance.The EFS is just being restarted, and preliminary results are expected in early 2013. Work is under way to improve operational efficiency, but the RBB data provide limited support to this activity, as most of the efficiency indicators are related to cycle times and not budget. OVE provides several suggestions for future work: (i) increase the focus, attention, and resources devoted to the RBB change management process to help achieve the culture change needed to create an organization that "manages for results"; (ii) plan for the involvement of all levels of Management, use internal and external experts in this process, and recognize that the process will take time; (iii) with Human Resources, create and implement incentives to recognize and reward behavior and good practices that can change the Bank¿s culture; (iv) consider raising the sponsorship level of the RBB, possibly combining it with the Program Optima governance structure; (v) focus on creating a limited set of performance indicators that drive the Bank¿s business and that link to its strategy, objectives and priorities; and (vi) reexamine the budget process to identify key constraints (for example, the head count ceiling) and reexamine the timing of performance reporting and budget allocations/reallocations to ensure alignment.
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Alonso-Robisco, Andres, et Jose Manuel Carbo. Analysis of CBDC Narrative OF Central Banks using Large Language Models. Madrid : Banco de España, août 2023. http://dx.doi.org/10.53479/33412.

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Central banks are increasingly using verbal communication for policymaking, focusing not only on traditional monetary policy, but also on a broad set of topics. One such topic is central bank digital currency (CBDC), which is attracting attention from the international community. The complex nature of this project means that it must be carefully designed to avoid unintended consequences, such as financial instability. We propose the use of different Natural Language Processing (NLP) techniques to better understand central banks’ stance towards CBDC, analyzing a set of central bank discourses from 2016 to 2022. We do this using traditional techniques, such as dictionary-based methods, and two large language models (LLMs), namely Bert and ChatGPT, concluding that LLMs better reflect the stance identified by human experts. In particular, we observe that ChatGPT exhibits a higher degree of alignment because it can capture subtler information than BERT. Our study suggests that LLMs are an effective tool to improve sentiment measurements for policy-specific texts, though they are not infallible and may be subject to new risks, like higher sensitivity to the length of texts, and prompt engineering.
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Bell, Gary, David Abraham, Nathan Clifton et Lamkin Kenneth. Wabash and Ohio River confluence hydraulic and sediment transport model investigation : a report for US Army Corps of Engineers, Louisville District. Engineer Research and Development Center (U.S.), mars 2022. http://dx.doi.org/10.21079/11681/43441.

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Avulsions of the Wabash River in 2008 through 2011 at its confluence with the Ohio River resulted in significant shoaling in the Ohio River. This caused a re-alignment of the navigation channel and the need for frequent dredging. A two-dimensional numerical hydrodynamic model, Adaptive Hydraulics (AdH), was developed to simulate base (existing) conditions and then altered to simulate multiple alternative scenarios to address these sediment issues. The study was conducted in two phases, Phase 1 in 2013 – 2015 and Phase 2 in 2018 – 2020. Field data were collected and consisted of multi-beam bathymetric elevations, bed sediment samples, suspended sediment samples, and discharge and velocity measurements. The model hydrodynamic and sediment transport computations adequately replicated the water surface slope, flow splits, bed sediment gradations, and suspended sediment concentrations when compared with field data. Thus, it was shown to be dependable as a predictive tool. The alternative that produced the most desirable results included a combination of three level-crested emergent dikes on Wabash Island and four submerged dikes on the Illinois shore with a level crest from the bank to the tip of the dike. The selected alternative produced an improved sailing line while maintaining authorized channel depths.
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