Bibliographies thématiques / B-N-doping

Littérature scientifique sur le sujet « B-N-doping »

Auteur : Grafiati
Publié le 1 avril 2023

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Articles de revues sur le sujet "B-N-doping"

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Zongbao, Li, Li Yong, Wang Ying et Wang xia. « Synergistic effect in B and N co-doped Ib-type diamond single crystal : A density function theory calculation ». Canadian Journal of Physics 94, no 9 (septembre 2016) : 929–32. http://dx.doi.org/10.1139/cjp-2016-0073.

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Using the first principles density functional theory, diamond crystal doping with B or N atoms, and B/N with different ratios were investigated, based on previous experimental structure results. The formation energies were calculated while the most stable doped structures were obtained for the lowest energy. For comparison, the electronic structures and the micro-mechanism of the doping crystals were discussed. The electronic results show that the doping of N atom is prior to B while the symmetry B–N–B stable structure appears with the N:B = 1:2 doping ratio. And also, the absorption spectrum gives the same results with the experiment for the distinct redshift.
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Kunuku, Srinivasu, Mateusz Ficek, Aleksandra Wieloszynska, Magdalena Tamulewicz-Szwajkowska, Krzysztof Gajewski, Miroslaw Sawczak, Aneta Lewkowicz, Jacek Ryl, Tedor Gotszalk et Robert Bogdanowicz. « Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films ». Nanotechnology 33, no 12 (28 décembre 2021) : 125603. http://dx.doi.org/10.1088/1361-6528/ac4130.

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Abstract Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples.
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Huang, Yuanchao, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang et Xiaodong Pi. « Effect of hydrogen on the unintentional doping of 4H silicon carbide ». Journal of Applied Physics 132, no 15 (21 octobre 2022) : 155704. http://dx.doi.org/10.1063/5.0108726.

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High-purity semi-insulating (HPSI) 4H silicon carbide (4H-SiC) single crystals are critical semiconductor materials for fabricating GaN-based high-frequency devices. One of the major challenges for the growth of HPSI 4H-SiC single crystals is the unintentional doping of nitrogen (N) and boron (B). The addition of hydrogen has been supposed to mitigate unintentional doping. However, the underlying mechanism has not been well understood. In this work, the role of hydrogen in the growth of HPSI 4H-SiC single crystals is investigated by first-principles formation-energy calculations. We find that the addition of hydrogen significantly mitigates N doping while hardly affecting B doping. Once hydrogen is added, hydrogen may adsorb at the growing surface of 4H-SiC, leading to surface passivation. Since N can react with hydrogen to form stable NH3 (g), the chemical potential of N is reduced, so that the formation energy of N in 4H-SiC increases. Hence, the critical partial pressure of nitrogen required for the growth of HPSI 4H-SiC single crystals increases by two orders of magnitude. Moreover, we reveal that the adjustment of relative B and N doping concentrations has a substantial impact on the Fermi energy of HPSI 4H-SiC. When the doping concentration of N is higher than that of B, N interacts with carbon vacancies (VC) to pin the Fermi energy at Z1/2. When the doping concentration of B is higher than that of N, the Fermi energy is pinned at EH6/7. This explains that the resistivity of unintentionally doped HPSI 4H-SiC may vary.
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Al Ghifari, Alvin Dior, Edi Sanjaya et Isnaeni Isnaeni. « Pengaruh Doping Nitrogen, Sulfur, dan Boron terhadap Spektrum Absorbansi dan Fotoluminesensi Karbon Dot Asam Sitrat ». Al-Fiziya : Journal of Materials Science, Geophysics, Instrumentation and Theoretical Physics 2, no 2 (31 décembre 2019) : 93–101. http://dx.doi.org/10.15408/fiziya.v2i2.11787.

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Telah dilakukan sintesis karbon dot dengan bahan asam sitrat dengan metode pemanasan microwave. Sampel yang dibuat adalah sampel murni dan sampel yang diberi doping. Doping yang digunakan adalah HNO3 untuk doping Nitrogen (N), Na2S2O5 untuk doping Sulfur (S), dan H3BO3 untuk doping Boron (B). Pengujian optik yang dilakukan adalah Absorbansi UV-Vis dan Fotoluminesensi. Sampel karbon dot asam sitrat tanpa doping diuji terlebih dahulu, kemudian karbon dot doping-N, doping-S, dan doping-B diuji. Hasil yang didapat berupa spektrum absorbansi yang merupakan daya serap gelombang sampel yang diuji, dan spektrum fotoluminesensi yang merupakan pendaran sampel yang diuji. Spektrum sebelum pendopingan dibandingkan dengan spektrum setelah pendopingan. Dilakukan analisis perubahan sumbu-x yaitu pergeseran panjang gelombang, dan sumbu-y yaitu kenaikan atau penurunan nilai absorbansi dan intensitas fotoluminesensi. Hasil absorbansi karbon dot asam sitrat murni memiliki dua buah puncak (peak) absorbansi. Pendopingan N dan S tidak mempengaruhi spektrum absorbansi secara signifikan, namun pendopingan B sangat mempengaruhinya pada puncak kedua dengan menggeser 40 nm ke kanan dan menurunkan nilai absorbansi 1,68. Sedangkan hasil fotoluminesensi karbon dot asam sitrat murni memiliki sebuah puncak pada panjang gelombang 502 nm dengan intensitas 758 a.u., atau pendarannya berada dalam daerah warna cyan. Pendopingan N, S, dan B dapat menggeser spektrum fotoluminesensi ke arah warna merah dan nilai terbesar adalah dengan doping S yaitu sebesar 32 nm.
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Kosaka, Hisashi, Yasuyuki Kaneno et Takayuki Takasugi. « Ductilization of a Ni3(Si,Ti) Intermetallic Alloy by Addition of Interstitial Type Elements ». Advanced Materials Research 409 (novembre 2011) : 321–26. http://dx.doi.org/10.4028/www.scientific.net/amr.409.321.

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The effect of a concomitant doping of interstitial type elements boron (B) and carbon (C), and boron (B) and nitrogen (N) on tensile properties of a Ni3(Si,Ti) intermetallic alloy was investigated in the temperature range between room temperature and 973 K. It was found that the concomitant doping of (C/B) and (N/B) remarkably improved the intermediate-temperature tensile elongation of the Ni3(Si,Ti) alloy compared with the simple doping of B or C. It was also shown that the fracture surface of the alloy doped with (C/B) and (N/B) exhibited the ductile transgranular fracture mode while that of the alloy doped with only B showed a brittle intergranular fracture mode at 773 K. These results clearly indicate that the concomitant doping of the interstitial type elements are useful for improving the intermediate-temperature tensile ductility of the Ni3(Si,Ti) alloy.
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Dong, Changshuai, Bin Meng, Jun Liu et Lixiang Wang. « B ← N Unit Enables n-Doping of Conjugated Polymers for Thermoelectric Application ». ACS Applied Materials & ; Interfaces 12, no 9 (14 février 2020) : 10428–33. http://dx.doi.org/10.1021/acsami.9b21527.

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Huang, Jing-tao, Yong Liu, Zhong-hong Lai, Jin Hu, Fei Zhou et Jing-chuan Zhu. « Electronic structure and optical properties of non-metallic modified graphene : a first-principles study ». Communications in Theoretical Physics 74, no 3 (1 mars 2022) : 035501. http://dx.doi.org/10.1088/1572-9494/ac539f.

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Abstract In this paper, the electronic structure and stability of the intrinsic, B-, N-, Si-, S-doped graphene are studied based on first-principles calculations of density functional theory. Firstly, the intrinsic, B-, N-, Si-, S-doped graphene structures are optimized, and then the forming energy, band structure, density of states, differential charge density are analyzed and calculated. The results show that B- and Si-doped systems are p-type doping, while N is n-type doping. By comparing the forming energy, it is found that N atoms are more easily doped in graphene. In addition, for B-, N-, Si-doped systems, it is found that the doping atoms will open the band gap, leading to a great change in the band structure of the doping system. Finally, we systematically study the optical properties of the different configurations. By comparison, it is found that the order of light sensitivity in the visible region is as follows: S-doped> Si-doped> pure > B-doped > N-doped. Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.
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Tang, Lin, Ruifeng Yue et Yan Wang. « N-type B-S co-doping and S doping in diamond from first principles ». Carbon 130 (avril 2018) : 458–65. http://dx.doi.org/10.1016/j.carbon.2018.01.028.

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Türker, Lemi. « Substitutional doping of B, Al and N in C60 structure ». Journal of Molecular Structure : THEOCHEM 593, no 1-3 (septembre 2002) : 149–53. http://dx.doi.org/10.1016/s0166-1280(02)00313-5.

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Redlich, Ph, J. Loeffler, P. M. Ajayan, J. Bill, F. Aldinger et M. Rühle. « BCN nanotubes and boron doping of carbon nanotubes ». Chemical Physics Letters 260, no 3-4 (septembre 1996) : 465–70. http://dx.doi.org/10.1016/0009-2614(96)00817-2.

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Plus de sources

Thèses sur le sujet "B-N-doping"

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Skipa, Tetyana. « Modification of the electronic properties of carbon nanotubes by bundling, temperature, B- and N-doping a resonance Raman study / ». Karlsruhe : Forschungszentrum Karlsruhe, 2006. http://d-nb.info/983613184/34.

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Skipa, Tetyana [Verfasser]. « Modification of the electronic properties of carbon nanotubes by bundling, temperature, B- and N-doping : a resonance Raman study / Tetyana Skipa ». Karlsruhe : Forschungszentrum Karlsruhe, 2006. http://d-nb.info/983613184/34.

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Śledziewski, Tomasz [Verfasser], Heiko B. [Akademischer Betreuer] Weber et Martin [Gutachter] Hundhausen. « Electrical characterization of n-type 4H silicon carbide with improved material and interface properties using advanced doping techniques / Tomasz Śledziewski ; Gutachter : Martin Hundhausen ; Betreuer : Heiko B. Weber ». Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2018. http://d-nb.info/1170959156/34.

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Chapitres de livres sur le sujet "B-N-doping"

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Zhou, Delun, Lin Tang, Jinyu Zhang, Ruifeng Yue et Yan Wang. « n-type B-N Co-doping and N Doping in Diamond from First Principles ». Dans Computational Science – ICCS 2022, 530–40. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08751-6_38.

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Rubio, Angel. « Electronic and Doping Properties of B x C y N z Nanotubes ». Dans Nanowires, 133–42. Dordrecht : Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_9.

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Grätzel, Michael. « Photovoltaic and photoelectrochemical conversion of solar energy ». Dans Energy... beyond oil. Oxford University Press, 2007. http://dx.doi.org/10.1093/oso/9780199209965.003.0010.

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The Sun provides about 100,000 Terawatts (TW) to the Earth, which is approximately ten thousand times greater than the world’s present rate of energy consumption (14 TW). Photovoltaic (PV) cells are being used increasingly to tap into this huge resource and will play a key role in future sustainable energy systems. Indeed, our present needs could be met by covering 0.5% of the Earth’s surface with PV installations that achieve a conversion efficiency of 10%. Fig. 8.1 shows a simple diagram of how a conventional photovoltaic device works. The top and bottom layers are made of an n-doped and p-doped silicon, where the charge of the mobile carriers is negative (electrons) or positive (holes), respectively. The p-doped silicon is made by ‘doping’ traces of an electron-poor element such as gallium into pure silicon, whereas n-doped silicon is made by doping with an electron-rich element such as phosphorus. When the two materials contact each other spontaneous electron and hole transfer across the junction produces an excess positive charge on the side of the n-doped silicon (A) and an excess negative charge on the opposite p-doped (B) side. The resulting electric field plays a vital role in the photovoltaic energy conversion process. Absorption of sunlight generates electron-hole pairs by promoting electrons from the valence band to the conduction band of the silicon. Electrons are minority carriers in the p-type silicon while holes are minority carriers in the n-type material. Their lifetime is very short as they recombine within microseconds with the oppositely charged majority carriers. The electric field helps to collect the photo-induced carriers because it attracts the minority carriers across the junction as indicated by the arrows in Fig. 8.1, generating a net photocurrent. As there is no photocurrent flowing in the absence of a field, the maximum photo-voltage that can be attained by the device equals the potential difference that is set up in the dark at the p-n junction. For silicon this is about 0.7V. So far, solid-state junction devices based on crystalline or amorphous silicon (Si) have dominated photovoltaic solar energy converters, with 94% of the market share.
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Actes de conférences sur le sujet "B-N-doping"

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Ma, HaoHao, XianBin Zhang, XuYan Wei et JiaoMeng Cao. « Effect of B/N Doping on the Electronic Properties of Bilayer Graphene ». Dans Information Storage System and Technology. Washington, D.C. : OSA, 2019. http://dx.doi.org/10.1364/isst.2019.jw4a.92.

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Skipa, T. « Modification of the Electronic Properties of Carbon Nanotubes : Bundling and B - and N - doping ». Dans ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES : XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103851.

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Gedam, Nandkishor Husen, et Bikash Rout. « Modeling of electronic structure and band gap formation in graphene by B/N doping : First principle study ». Dans 2015 International Conference on Futuristic Trends on Computational Analysis and Knowledge Management (ABLAZE). IEEE, 2015. http://dx.doi.org/10.1109/ablaze.2015.7155025.

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Lee, Byeonghee, Kyeongtae Kim, Seungkoo Lee, Ohmyoung Kwon, Jong Hoon Kim, Dae Soon Lim, Woo Il Lee et Joon Sik Lee. « Design and Batch-Fabrication of Diamond Thermocouple Probes for the Quantitative Thermopower Profiling of Silicon IC Devices ». Dans 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-23347.

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We developed a measurement technique that can quantitatively map out the dopant density profile of a silicon integrated-circuit device. This method obtains the quantitative doping density profile by simultaneously carrying out local heating, temperature sensing, and thermoelectric voltage measurement at the tip of a diamond thermocouple probe. This probe, which is the key component of the proposed scheme, is fabricated through a nano-fabrication technique that makes use of boron-doped diamond film that can resist stress up to 10 Gpa, which is necessary for stable electric contact with silicon samples. The tip and cantilever of the probe are made of B-doped diamond by means of the silicon lost-mold technique that guarantees a sharper tip apex than that of a diamond-coated probe. A gold-chromium thermocouple junction is integrated at the tip apex for simultaneous heating and sensing. The size of the thermocouple is about 500 nm and the radius of the tip apex is less than 50 nm. The measurement technique is demonstrated by measuring the thermopower distribution across a silicon p-n junction and the result is compared with the theoretical values.
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Lin, C. P., P. S. Liu, L. S. Lyu, M. Y. Li, C. C. Cheng, T. H. Lee, W. H. Chang, L. J. Li et T. H. Hou. « N-type Doping Effect of Transferred MoS2 and WSe2 Monolayer ». Dans 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.b-4-4.

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Koike, M., et K. Tatsumura. « Diffusion control of n-type impurities in Ge using co-doping technique for ultra-shallow and highly doped n+/p junction in Ge nMOSFETs ». Dans 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.b-7-3.

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