Littérature scientifique sur le sujet « Amorphous Silicon (a-Si:H) »
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Articles de revues sur le sujet "Amorphous Silicon (a-Si:H)"
FU, GUANG-SHENG, YAN-BIN YANG, WEI YU, WAN-BING LU, WEN-GE DING et LI HAN. « AMORPHOUS SILICON NANO-PARTICLES IN A-SiNx:H PREPARED BY HELICON WAVE PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION ». International Journal of Modern Physics B 19, no 15n17 (10 juillet 2005) : 2704–9. http://dx.doi.org/10.1142/s0217979205031560.
Texte intégralRath, Chandana, J. Farjas, P. Roura, F. Kail, P. Roca i Cabarrocas et E. Bertran. « Thermally Induced Structural Transformations on Polymorphous Silicon ». Journal of Materials Research 20, no 9 (septembre 2005) : 2562–67. http://dx.doi.org/10.1557/jmr.2005.0322.
Texte intégralCHEN, C. Y., W. D. CHEN, S. F. SONG et C. C. HSU. « CORRELATION BETWEEN Er3+ EMISSION AND THE MICROSTRUCTURE OF A-SiOx:H FILMS ». International Journal of Modern Physics B 16, no 28n29 (20 novembre 2002) : 4246–49. http://dx.doi.org/10.1142/s0217979202015182.
Texte intégralFollstaedt, D. M., J. A. Knapp et S. M. Myers. « Mechanical properties of ion-implanted amorphous silicon ». Journal of Materials Research 19, no 1 (janvier 2004) : 338–46. http://dx.doi.org/10.1557/jmr.2004.19.1.338.
Texte intégralLIM, P. K., et W. K. TAM. « LOCAL VIBRATIONAL MODES AND THE OPTICAL ABSORPTION TAIL OF AMORPHOUS SILICON ». International Journal of Modern Physics B 20, no 25n27 (30 octobre 2006) : 4261–66. http://dx.doi.org/10.1142/s0217979206041197.
Texte intégralWang, Sheng Zhao, Ying Peng Yin, Chun Juan Nan et Ming Ji Shi. « Influence of Substrate on μc-Si : H Thin Films ». Key Engineering Materials 538 (janvier 2013) : 169–72. http://dx.doi.org/10.4028/www.scientific.net/kem.538.169.
Texte intégralLeila, Ayat, Meftah Afek, Idda Ahmed et Zebri Halima. « Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell ». Journal of New Materials for Electrochemical Systems 24, no 3 (30 septembre 2021) : 151–58. http://dx.doi.org/10.14447/jnmes.v24i3.a02.
Texte intégralSun, Jia Xin, Bing Qing Zhou et Xin Gu. « Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots ». Solid State Phenomena 323 (30 août 2021) : 48–55. http://dx.doi.org/10.4028/www.scientific.net/ssp.323.48.
Texte intégralДенисова, К. Н., А. С. Ильин, М. Н. Мартышов et А. С. Воронцов. « Влияние легирования на свойства аморфного гидрогенизированного кремния, облученного фемтосекундными лазерными импульсами ». Физика твердого тела 60, no 4 (2018) : 637. http://dx.doi.org/10.21883/ftt.2018.04.45669.034.
Texte intégralIwase, Yoshiaki, Teruaki Fuchigami, Yoji Horie, Yusuke Daiko, Sawao Honda et Yuji Iwamoto. « Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives ». Materials 12, no 10 (27 mai 2019) : 1721. http://dx.doi.org/10.3390/ma12101721.
Texte intégralThèses sur le sujet "Amorphous Silicon (a-Si:H)"
Tam, Wai Keung. « Effect of thermal annealing on Si-H bonds and dangling bonds in amorphous silicon ». HKBU Institutional Repository, 2006. http://repository.hkbu.edu.hk/etd_ra/717.
Texte intégralRéaux, David. « Cellules photovoltaïques à hétérojonctions de silicium (a-Si˸H/c-Si) : modélisation des défauts et de la recombinaison à l'interface ». Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS174/document.
Texte intégralSilicon heterojunction (Si- HET) solar cells are based on an n-doped (p-doped) crystalline silicon (c-Si) substrate, a very thin (a few nanometers) passivation layer of undoped hydrogenated amorphous silicon (a-Si:H) and a layer of p-doped (n-doped) a-Si:H, approximately 10 nanometer- thick. These cells currently lead the performance of silicon solar cells with conversion efficiencies in the order of 26% (with a record of 26.6% being achieved by the Kaneka company in 2017). One of the major focal points of research in Si- HET cells is the study of the c-Si/a-Si:H interface, which is a key factor in the cells' efficiency. In particular, this efficiency is strongly dependent on the recombination states at the interface between c-Si and a-Si:H. We therefore focused on developing a model of recombination through interface defects, which were evaluated based on the Defect-Pool Model (DPM) in a-Si:H. We calculated the effective lifetime vs excess carrier density curves and their dependence on the undoped a-Si:H passivation layer thickness and compared them to experimental results.In order to determine the characteristics of the c-Si/a-Si:H interface, we proceeded as follows: (1) Calculation of the volumic density of states (DOS) in a-Si:H layers (doped and undoped) using the DPM. In this model, the DOS varies as a function of the position of the Fermi level in relation to the band edge. The band bending at the a-Si:H/c-Si interface thus implies a spatial variation of the DOS in a-Si:H. (2) Calculation of the surface DOS at the interface by projection from the volumic states present in a-Si:H at the interface. (3) Calculation of the recombination rates and of the effective lifetime curves for symmetrical a-Si:H/c-Si/a-Si:H structures and comparison with experimental results. Thus we were able to study the impact of material parameters of a-Si:H on the effective lifetime curves. The change in lifetime as a function of a-Si:H parameters is sometimes counter-intuitive because two passivation mechanisms, namely passivation by field-effect or by the reduction of the DOS at the a-Si:H/c-Si interface, have opposed behavior in relation to the position of the Fermi level at the interface. A simple calculation of the DOS at the interface is not, therefore, sufficient to explain variations in lifetime, and a complete calculation of effective lifetime under illumination is required and has been performed. We demonstrate that the impact of certain DPM parameters may have a significant effect on the DOS but only a minor effect on the effective lifetime due to the compensation by the field-effect passivation. Moreover we have studied both types of silicon heterojunctions, (p)a-Si:H/(i)a-Si:H/(n)c-Si(PIn), and (n)a-Si:H/(i)a-Si:H/(n)c-Si(NIn) that are used as front emitter and back surface field junctions, respectively, in double-side contacted silicon Si-HET solar cells. Our simulations allowed us to emphasize that NIn interfaces are less critical in terms of recombination than PIn interfaces. We demonstrate that recombination at PIn interfaces is dominated by the capture of electrons by positively charged silicon dangling bonds. We further show that the Urbach energy is the major a-Si:H parameter that determines the effective lifetime in Si-HET solar cells and that the use of fixed values for this Urbach energy in the passivation layer whatever the layer thickness does not permit the experimental trends of PIn interfaces to be reproduced. Instead, we propose a model featuring that the Urbach energy decreases with the thickness of the passivation layer, which does allow experimental trends to be reproduced for very thin passivation layers (< 10 nm), but which requires further elaboration for larger thicknesses, for instance with a combined bandgap variation
Martin, de Nicolas Silvia. « a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement ». Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112253/document.
Texte intégralAmongst available silicon-based photovoltaic technologies, a-Si:H/c-Si heterojunctions (HJ) have raised growing attention because of their potential for further efficiency improvement and cost reduction. In this thesis, research on n-type a-Si:H/c-Si heterojunction solar cells developed at the Institute National de l’Énergie Solaire is presented. Technological and physical aspects of HJ devices are reviewed, with the focus on the comprehension of the back side role. Then, an extensive work to optimise amorphous layers used at the rear side of our devices as well as back contact films is addressed. Through the development and implementation of high-quality intrinsic and n-doped a-Si:H films on HJ solar cells, the needed requirements at the back side of devices are established. A comparison between different back surface fields (BSF) with and without the inclusion of a buffer layer is presented and resulting solar cell output characteristics are discussed. A discussion on the back contact of HJ solar cells is also presented. A new back TCO approach based on boron-doped zinc oxide (ZnO:B) layers is studied. With the aim of developing high-quality ZnO:B layers well-adapted to their use in HJ devices, different deposition parameters as well as post-deposition treatments such as post-hydrogen plasma or excimer laser annealing are studied, and their influence on solar cells is assessed. Throughout this work it is evidenced that the back side of HJ solar cells plays an important role on the achievement of high efficiencies. However, the enhancement of the overall device performance due to the back side optimisation is always dependent on phenomena taking place at the front side of devices. The use of the optimised back side layers developed in this thesis, together with improved front side layers and a novel metallisation approach have permitted a record conversion efficiency over 22%, thus demonstrating the great potential of this technology
Favre, Wilfried. « Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations ». Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00635222.
Texte intégralLarbi, Fadila. « Traitement de couches minces et de dispositifs à base de a-Si : H par un plasma d'hydrogène : Etude in situ par ellipsométrie spectroscopique ». Thesis, Reims, 2014. http://www.theses.fr/2014REIMS010/document.
Texte intégralThis work is a contribution to the study of the interaction between hydrogenated amorphous silicon (a-Si:H) thin films and hydrogen plasma in a PECVD (Plasma Enhanced Chemical Vapor Deposition) reactor. The kinetics of silicon etching by atomic hydrogen is monitored in situ by UV - visble ellipsometry .Several plasma parameters (temperature, RF power, H2 gas pressure, the doping of the material) that may impact the kinetics were probed. An analysis of the spectroscopic ellipsometry spectra, thanks to an appropriate optical model, allowed evidencing their effects on the time constant, the thickness and the hydrogen excess of the H-modified layer.The same hydrogen plasma treatment repeated on i/p and i/n H base junctions revealed a particular behavior of the etching kinetics in the junction zone. This effect is interpreted in the frame of a simple of hydrogen diffusion model under an electric field
Pepenene, Refuoe Donald. « Macroscopic and Microscopic surface features of Hydrogenated silicon thin films ». University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.
Texte intégralAn increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials, challenges such as the partial understanding of standardized measurement protocols, and the relationship between the structure and optoelectronic properties still need to be overcome.
Bosco, Giácomo Bizinoto Ferreira 1987. « Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD ». [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.
Texte intégralTese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017
Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclotrônica de elétrons (ECR PECVD) e por pulverização catódica reativa em radiofrequência (reactive RF-Sputtering) ¿ com o propósito de avançar a investigação em fabricação de novos materiais e dos mecanismos da emissão de luz de íons de Tb quando diluídos em materiais baseados em silício. A fotoluminescência (PL) atribuída aos filmes de a-SiNx:H foi investigada em termos das condições de deposição e correlacionadas com suas propriedades estruturais e de recozimento pós-deposição. Entre as propriedades caracterizadas estão: estequiometria, taxa de deposição, índice de refração, coeficiente de extinção, bandgap ótico E04, concentração de térbio e vizinhança química presente ao redor de íons Tb3+. Concentrações de Tb da ordem de 1.8 at.% ou 1.4×?10?^21 at/cm^3 foram obtidas em amostras crescidas por Sputtering enquanto que concentrações de 14.0 at.%, ou da ordem ?10?^22 at/cm^3, puderam ser obtidas em amostras crescidas por ECR PECVD. Em Sputtering, a incorporação de Tb varia linearmente com a área recoberta por pastilhas de Tb4O7 em pó, enquanto que em PECVD, a incorporação de Tb é inversamente proporcional e pode ser ajustada sensivelmente pelo fluxo de gás SiH4. Forte emissão de luz, atribuída às transições eletrônicas em Tb3+ (PL do Tb), foi obtida em filmes não-recozidos que possuíam bandgap estequiométrico (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). Espectros de PL do Tb não mostraram mudanças significativas no formato e na posição dos picos de emissão devido a alterações na temperatura de recozimento, nas condições de deposição ou entre amostras crescidas por diferentes técnicas de deposição. Entretanto, esses parâmetros influenciaram fortemente a intensidade da PL do Tb. Estudos da estrutura fina de absorção de raios-X (XAFS) em filmes crescidos por sputtering mostraram a estabilidade da vizinhança química ao redor dos íons Tb3+ mesmo em altas temperaturas (1100ºC). Investigações por sonda atômica tomográfica (APT) não encontraram formação de nanoclusters envolvendo ou não Tb, mesmo após recozimentos em altas temperaturas. Isso sugere que a excitação de Tb3+ deve ocorrer através da própria matriz hospedeira amorfa e não por mudanças no campo cristalino e, portanto, na força de oscilador das transições eletrônicas do Tb3+. Caracterização da densidade de ligações Si-H por espectroscopia infravermelha a transformada de Fourier (FTIR) em filmes recozidos em diferentes temperaturas foi relacionada com a intensidade da PL do Tb. Ela mostra que um decréscimo na densidade das ligações Si-H, que está relacionada a um aumento na concentração de ligações pendentes de Si (Si-dbs), resulta em filmes com maior intensidade na PL do Tb. Portanto, isso sugere que a excitação de Tb3+ parece acontecer através de transições envolvendo Si-dbs e estados estendidos, o que é consistente com o modelo de excitação Auger por defeitos (DRAE)
Abstract: This work offers optical and structural characterization of terbium (Tb) doped hydrogenated amorphous silicon nitrides thin films (a-SiNx:H) grown by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) and reactive RF-Sputtering with the purpose of advancing the investigation in fabrication of novel materials and the mechanisms of light emission of Tb ions when embedded in Si-based materials. Photoluminescence (PL) of a-SiNx:H films were investigated and correlated with the deposition conditions, structural properties, and post-deposition thermal treatments (isochronal annealing under flow of N2). Among the characterized properties are: film stoichiometry, deposition rate, refractive index, extinction coefficient, optical bandgap, terbium concentration, and the chemical neighborhood around Tb ions. Tb concentrations of about 1.8 at.% or 1.4×?10?^21 at/cm^3 have been achieved in Sputtering system while concentrations of 14.0 at.%, or about ?10?^22 at/cm^3, could be achieved in ECR PECVD samples. In Sputtering, Tb incorporation varies linearly with the covered area of the Si target by Tb4O7 powder pellets, while in PECVD, Tb incorporation is inversely proportional to and can be sensitively adjusted through SiH4 gas flow. Bright PL attributed to Tb3+ electronic transitions (Tb PL) were obtained in as-deposited films with stoichiometric bandgaps (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). The Tb PL spectra did not show any significant change in shape and in PL peak positions due to alterations in annealing temperature, deposition conditions or due to the used deposition method. However, these parameters strongly affected Tb PL intensity. Studies of X-ray absorption fine structure (XAFS) in Sputtering grown films show the stability of the chemical neighborhood around Tb3+ under annealing conditions even after thermal treatments at temperatures as high as 1100ºC. Atom probe tomography (APT) investigation also found no formation of nanoclusters of any type (involving Tb ions or not) after high temperature annealing treatments suggesting that Tb3+ excitation should come from the amorphous host matrix itself and not by changes in crystal field and thus in oscillator strength of Tb3+ electronic transitions. Fourier transform infrared spectroscopy (FTIR) characterization of Si-H bond density in films treated atin different annealing temperatures were crossed correlated with Tb PL intensity. It shows that a decrease in Si-H bond density, related to increase in Si dangling bonds (Si-dbs) concentration, results in greater Tb PL intensity. Thus, it suggests that excitation of Tb3+ happens through transitions involving silicon dangling bonds and extended states, consistent with the defect related Auger excitation model (DRAE)
Doutorado
Física
Doutor em Ciências
142174/2012-2
010308/2014-08
CNPQ
CAPES
Vergnat, Michel. « Hydrogénation d'alliages semi-conducteurs amorphes : Structure et propriétés électroniques des alliages amorphes hydrogènes SI ::(1-X)SN ::(X):H ». Nancy 1, 1988. http://www.theses.fr/1988NAN10322.
Texte intégralAKA, BOKO. « Photodecomposition sensibilisee au mercure du monosilane (hg-photo-cvd) : application au depot en couches minces de silicium amorphe hydrogene (a-si : h) ». Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13026.
Texte intégralPehlivan, Ozlem. « Growth And Morphological Characterization Of Intrinsic Hydrogenated Amorphous Silicon Thin Film For A-si:h/c-si Heterojunction Solar Cells ». Phd thesis, METU, 2013. http://etd.lib.metu.edu.tr/upload/12615488/index.pdf.
Texte intégralLivres sur le sujet "Amorphous Silicon (a-Si:H)"
Senoussaoui, Nadia. Einfluss der Oberflächenstrukturierung auf die optischen Eigenschaften der Dünnschichtsolarzellen auf der Basis von a-Si : H und [mu]c-Si : H. Jülich : Forschungszentrum Jülich, Zentralbibliothek, 2004.
Trouver le texte intégralChapitres de livres sur le sujet "Amorphous Silicon (a-Si:H)"
Xu, Z., J. V. Vandyshev, P. M. Fauchet, C. W. Rella, H. A. Schwettman et C. C. Tsai. « Ultrafast Excitation and Deexcitation of Local Vibrational Modes in a Solid Matrix : The Si-H Bond in Amorphous Silicon ». Dans Springer Series in Chemical Physics, 410–11. Berlin, Heidelberg : Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_179.
Texte intégralAdachi, Sadao. « a-Silicon (a-Si) ». Dans Optical Constants of Crystalline and Amorphous Semiconductors, 663–72. Boston, MA : Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_63.
Texte intégralGüneş, Mehmet. « Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon(a-Si1-X Cx :H) Alloy Thin Films ». Dans Diamond Based Composites, 285–99. Dordrecht : Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5592-2_24.
Texte intégralNishino, S., et J. Saraie. « Epitaxial Growth of 3C-SiC on a Si Substrate Using Methyltrichlorosilane ». Dans Amorphous and Crystalline Silicon Carbide and Related Materials, 45–50. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_5.
Texte intégralDe Wolf, Stefaan. « Intrinsic and Doped a-Si:H/c-Si Interface Passivation ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 223–59. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_7.
Texte intégralTucci, Mario, Luca Serenelli, Simona De Iuliis, Massimo Izzi, Giampiero de Cesare et Domenico Caputo. « Contact Formation on a-Si:H/c-Si Heterostructure Solar Cells ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 331–75. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_10.
Texte intégralLeendertz, Caspar, et Rolf Stangl. « Modeling an a-Si:H/c-Si Solar Cell with AFORS-HET ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 459–82. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_14.
Texte intégralKorte, Lars. « Electronic Properties of Ultrathin a-Si:H Layers and the a-Si:H/c-Si Interface ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 161–221. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_6.
Texte intégralAngermann, Heike, et Jörg Rappich. « Wet-Chemical Conditioning of Silicon Substrates for a-Si:H/c-Si Heterojunctions ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 45–94. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_3.
Texte intégralMuñoz, Delfina, Thibaut Desrues et Pierre-Jean Ribeyron. « a-Si:H/c-Si Heterojunction Solar Cells : A Smart Choice for High Efficiency Solar Cells ». Dans Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 539–72. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_17.
Texte intégralActes de conférences sur le sujet "Amorphous Silicon (a-Si:H)"
Lucovsky, G. « Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) Defect reduction for device applications ». Dans 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013). IEEE, 2013. http://dx.doi.org/10.1109/ulis.2013.6523524.
Texte intégralMahan, A. H., et Milan Vanecek. « A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique ». Dans Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41028.
Texte intégralBarth, M., et P. Hess. « Observation of Si-Ge Alloy Formation for Germanium Growth on H-Terminated Si(111) by Real-Time Ellipsometry ». Dans Chemistry and Physics of Small-Scale Structures. Washington, D.C. : Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.cmb.5.
Texte intégralSchall, J. D., G. T. Gao, K. V. Workum, P. T. Mikulski et J. A. Harrison. « Friction and Wear Studies of Hydrogenated Amorphous Carbon Films Containing Silicon ». Dans World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63746.
Texte intégralKnobloch, J., et P. Hess. « Atomic-Scale FTIR Spectroscopy of Silicon Nucleation and Growth on H-Terminated and Oxide Covered Si(111) ». Dans Chemistry and Physics of Small-Scale Structures. Washington, D.C. : Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.cmb.4.
Texte intégralXu, Zhiwei, Jury V. Vandyshev, Philippe M. Fauchet, Chris W. Rella, H. Alan Schwettman et Chuang Chuang Tsai. « Ultrafast Excitation and Deexcitation of Local Vibrational Modes in a Solid Matrix : The Si-H Bond in Amorphous Silicon ». Dans International Conference on Ultrafast Phenomena. Washington, D.C. : Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.thc.5.
Texte intégralKim, Kwangsu, Yonghyun Cho, Youngjin Kim et Taesung Kim. « Generation of SI Nanoparticles Using Plasma Technology for Novel Device and Energy Storage Application ». Dans ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-41800.
Texte intégralWilden, J., et A. Wank. « Hartstoffsynthese aus flüssigen Precursoren auf Siliziumbasis mittels DC-Plasmajet (Hard Material Coatings Synthesized of Silicon Based Liquid Precursors by DC-Plasmajet) ». Dans ITSC 1999, sous la direction de E. Lugscheider et P. A. Kammer. Verlag für Schweißen und verwandte Verfahren DVS-Verlag GmbH, 1999. http://dx.doi.org/10.31399/asm.cp.itsc1999p0158.
Texte intégralMueller, Thomas, Maximilian Scherff, Wolfgang Dungen, Yue Ma et Wolfgang Fahrner. « Hydrogenated Amorphous Carbon-Silicon Alloys [a-SixC1-x(n):Hy] used as Emitters of Heterojunction Solar Cells ». Dans 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279715.
Texte intégralKabulov, Rustam R. « Influence of the varyband layer of the amorphous hydrogenated silicon-germanium on the current-volt characteristics of the n+(a-Si:H)-i(a-Si 1-x Ge x :H)-n+(a-Si:H)-structures ». Dans Microelectronic Manufacturing, sous la direction de David Burnett, Shin'ichiro Kimura et Bhanwar Singh. SPIE, 2000. http://dx.doi.org/10.1117/12.395742.
Texte intégral