Thèses sur le sujet « Algabal »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Consultez les 50 meilleures thèses pour votre recherche sur le sujet « Algabal ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Parcourez les thèses sur diverses disciplines et organisez correctement votre bibliographie.
LIMA, Janirza Cavalcante da Rocha. « Espelho quebrado - Algafan e Desvio ». Universidade Federal de Pernambuco, 1987. https://repositorio.ufpe.br/handle/123456789/17025.
Texte intégralMade available in DSpace on 2016-05-31T17:36:23Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) 39L732e Dissertação.pdf: 11631529 bytes, checksum: 7535b3e019fc6480770102525182df41 (MD5) Previous issue date: 1987-06
A farmacodependência é um fenômeno de todos os tempos e de todos os povos. É um fenômeno permanente, variando segundo o critério relativo das normas sócio-culturais de cada sociedade, numa dada época. Através dos tempos, o homem utilizou substâncias diversas no intuito de modificar sua percepção do mundo e transformar sua vivência subjetiva. Este estudo objetiva verificar, na prática, até que ponto a condição de desviante (usuário de Algafan) é sancionada e reforçada pelo aparelho institucional. O referencial empírico foi a divisão de Serviços técnicos da Secretaria da Segurança Pública de Pernambuco, onde se operacionaliza o disposto no Decreto –lei n. 6.368 e tendo dentre a clientela atendida, o dependente de Cloridrato de Destro-propoxifeno, conhecido comercialmente sob o nome de Algafan Composto. Apoiada em dados secundários, entrevistas e, sobretudo, na observação participante, a análise se desenvolve em três momentos: inicialmente, procura explicitar como se configura o usuário de Algafan; numa segunda etapa, tenta delinear os momentos marcantes da produção da identidade desviante onde as relações se estabelecem numa forma dialética entre acusados (dependentes de algafan) e acusadores (lei, família, agentes policiais e equipe terapêutica); finalmente, através de uma análise dos discursos dos dependentes, busca entender como eles percebem a situação em que vivem e os projetos que elaboram. Destacam-se, nas conclusões, os aspectos mais significativos dessa interpretação, face aos objetivos a que se propõe o estudo e o marco referencial teórico que o norteou. O estudo revela que a operacionalidade do Decreto-lei n.6.368 vem, antes, reforçar a condição de desviante, e não, ao contrário, recuperá-lo, tendo a Divisão de Serviçoes Técnicos um papel marcante nesse processo. Mostra também que, apesar de perceberem-se como outsiders, os dependentes ainda elaboram projetos de vida, na tentativa de superação de suas carências afetivas, econômicas e sociais. Eles anseiam pela existência de espaços sociais e psicológicos próprios onde possam se inserir e aos quais sintam pertencer.
La farmacodependencia es um hecho de todos los tiempos y todos los pueblos. Se trate de un fenómeno permanente, cuyas variaciones obedecen al criterio, relativo, de las normas sociocultureles de cada sociedad en determinada época. A través de los tiempos el hombre ha utilizado distintos tipos de drogas, con miras a cambiar su percepción del mundo y transformar sus experiencias subjetivas. El presente estudio se propone comprobar en la práctica, hasta que punto la condición de descarriado (adicto al Algafan) es sancionada y reforzada por el aparato institucional. El marco empirico ha sido la Division de Servicios Tecnicos de la Secretaria de Seguridad Pública del Estado de Pernambuco, donde se cumple dos dispuesto por el Decreto n. 6.368. Los clientes son los dependientes del Clorhidrato de destropropoxifeno, comercialmente conocido como “Algafan Composto”. Con base en datos secundarios, entrevistas y, sobre todo, en la observación participativa, el análisis se desarrolla en tres etapas: inicialmente trata de caracterizar el adicto al “Algafan”; en seguida intenta definir los momentos marcantes del proceso de surgimiento de la identidad discrepante, durante el cual se establecen las relaciones dialécticas entre acusados (dependientes de “Algafan”) y acusadores (ley, familia, agentes de la policía y equipo terapéutico); finalmente, a través del análisis de las declaraciones de los drogadictos, se trata de entender de que forma ellos captan la propia situación y los planos que hacen. En las conclusiones sobresalen los rasgos más significativos de esa interpretación, en relación a los objetivos de estudio y a su marco teorico. Este trabajo revela que la aplicación del Decreto n. 6.368 refuerza la condición del descarriado, en vez de recuperarlo; y la División de Servicios Técnicos juega un papel fundamental en ese proceso. Muestra, además, el estudio que, prese al hecho de reconocerse como “outsiders”, los dependientes siguen elaborando proyectos de vida, en el intento de superar sus necesidades afectivas, económicas e sociales. Ellos anhelar espacios sociales y sicológicos propios, en lo que se puedan incluir y a los cuales sientan pertenecer.
Mouetsi, Souheil. « Contribution à l’étude du bruit basse fréquence dans des hétérostructures AlGaAs/GaAs/AlGaAs ». Reims, 2010. http://theses.univ-reims.fr/sciences/2010REIMS023.pdf.
Texte intégralThe study presented in this manuscript is devoted to characterize a two dimensional electron gaz (2DEG) in a AlGaAs/GaAs/AlGaAs heterostructure by using the low frequency noise technique. The study was made for different bias voltages and at different temperatures (4 - 300 K). Several noise sources (thermal noise, generation-recombination noise (G-R) and 1/f noise) contributing to the total spectrum were identified. With thermal noise, we have shown that it was possible to access to the contact resistances. Analysis of the G-R noise has allowed identification of defects responsible of this noise. To do this, it was necessary to determine thermal activation energies and capture cross sections characterizing these defects. The study of 1/f noise was made in two ways: first, application of the Hooge model showed that this noise is mainly caused by the network mobility fluctuation. Then, applying the modified model of Handel has strengthened the proposal fluctuation of the mobility
Ulman, Morrison. « Femtosecond carrier dynamics in AlGaAs ». Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/17396.
Texte intégralAffandy, Gabriel, Donald Bridges, Quinn Daniels, Drew Janicek, Julia Martin, Edward Poling, Jordan Schmalz et al. « HAWAII ALGAL BIOFUEL ». Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/32891.
Texte intégralLam, Hoi-yeung Ironside. « Marine microalgal dynamics at Crooked and Lamma Islands, Hong Kong ». Click to view the E-thesis via HKUTO, 2002. http://sunzi.lib.hku.hk/hkuto/record/B43895323.
Texte intégralHeld, Lucas. « Implantation isolation in AlGaAs/GaAs structures ». Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32366.
Texte intégralBrown, Robert James. « Electronic transport in GaAs/AlGaAs microstructures ». Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335681.
Texte intégralSharma, Adesh. « Electronic transport in GaAs-AlGaAs heterostructures ». Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.
Texte intégralJohn, Gareth. « Spin relaxation phenomena in GaAs/AlGaAs ». Thesis, University of Southampton, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.433964.
Texte intégralChatterjee, Ritwik 1974. « Linearity of power AlGaAs/GaAs HBTs ». Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47494.
Texte intégralSchulz, Robert [Verfasser]. « Optische Spektroskopie an zweidimensionalen Lochsystemen in GaAs-AlGaAs-Quantenwells und an GaAs-AlGaAs-GaMnAs-Schichtstrukturen / Robert Schulz ». Regensburg : Univ.-Verl. Regensburg, 2010. http://d-nb.info/1007748524/34.
Texte intégralLi, Shuo. « Interactions of Toxic Metals with Algal Toxins Derived from Harmful Algal Blooms ». FIU Digital Commons, 2011. http://digitalcommons.fiu.edu/etd/478.
Texte intégralHetherington, C. « Transmission electron microscopy of GaAs/AlGaAs multilayers ». Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379967.
Texte intégralBristow, Alan Douglas. « Optical investigation of AlGaAs photonic crystal waveguides ». Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398692.
Texte intégralCallebaut, Hans 1975. « GaAs/AlGaAs far-infrared quantum cascade laser ». Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/44513.
Texte intégralIncludes bibliographical references (p. 123-127).
In this thesis I investigated the feasibility of an optically pumped inter subband farinfrared (40-100[mu]m) laser, using GaAs/ AlxGal-xAs heterostructures. The proposed design aims to use LO-phonon-mediated depopulation of the lower THz laser level to aid the intersubband laser population inversion. Interband recombination occurs by means of stimulated emission, thus combining an interband (~1550 me V) and intersubband (~16-18 meV) laser. As the subband properties of both the valence band and the conduction band are important for this work, a numerical program code was developed for the valence band to supplement the available tools for the conduction band. The steady state rate equations for the proposed quantum well structure were solved self-consistently for several different carrier temperatures. The calculations indicate that a pump beam of moderate power (0.5-1 W) concentrated on a device of typical dimensions (104 cm2) can generate an intersuhb and gain of 20 cm-1 at 50 K for a THz emission linewidth of 2 meV. This gain level can suffice to obtain THz lasing action, provided that the cavity losses can be kept in check. The performance of the THz laser is predicted to be very dependent on electron temperature, mainly due to the opening of a parasitic LO-phonon channel between the THz laser levels. Interband lasing seems to be easier to obtain, as the calculated threshold pump intensity is lower than for the intersubband case.
by Hans Callebaut.
S.M.
Williams, Benjamin S. (Benjamin Stanford) 1974. « GaAs/AlGaAs mid-infrared quantum cascade laser ». Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/49645.
Texte intégralIncludes bibliographical references (p. 111-115).
by Benjamin S. Williams.
M.S.
Hultgren, Charles T. (Charles Timothy). « Femtosecond nonlinearities in AlGaAs diode laser amplifers ». Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/32621.
Texte intégralIncludes bibliographical references (leaves 141-148).
by Charles Timothy Hultgren.
Ph.D.
Jin, Yan. « Evolution des parametres electriques dans les tegfet standards (algaas/gaas) et pseudomorphiques (algaas/ingaas/gaas)-a grille ultra courte ». Paris 11, 1993. http://www.theses.fr/1993PA112037.
Texte intégralLizzul, A. M. « Integrated production of algal biomass ». Thesis, University College London (University of London), 2016. http://discovery.ucl.ac.uk/1474169/.
Texte intégralShellcock, Carole. « Molecular aspects of algal biofuels ». Thesis, University of Aberdeen, 2013. http://digitool.abdn.ac.uk:80/webclient/DeliveryManager?pid=217886.
Texte intégralRoss, Oliver N. « Algal motility in variable turbulence ». Thesis, University of Southampton, 2004. https://eprints.soton.ac.uk/45995/.
Texte intégralWissinger, Joshua Clinton. « Hydrothermal Treatment of Algal Feedstocks ». University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1370954774.
Texte intégralProvan, Anne. « Systematic chemical screening of mircroalgae ». Thesis, University of Strathclyde, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366955.
Texte intégralGomes, Prova Christina. « AlGaAs Microring Resonators for All-Optical Signal Processing ». Thesis, Université d'Ottawa / University of Ottawa, 2016. http://hdl.handle.net/10393/35592.
Texte intégralAhmad, S. T. « Low dimensional hybrid ferromagnetic AlGaAs/GaAs semiconductor nanostructures ». Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595379.
Texte intégralCarmmona, Humberto de Andrade. « Quantum magneto-transport in AlGaAs/GaAs nano-devices ». Thesis, University of Nottingham, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319672.
Texte intégralChen, Ye Huang. « AlGaInP/AlGaAs visible vertical cavity surface emitting lasers ». Thesis, University of Sheffield, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389670.
Texte intégralHolder, Jonathan Paul. « Resonant tunnelling spectroscopy of vertical GaAs/AlGaAs structures ». Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312281.
Texte intégralHarrell, Ruth Helen. « Induced electron gases in undoped GaAs/AlGaAs heterostructures ». Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.625054.
Texte intégralSeraide, Rodrigo Migotto. « Mobilidade eletrônica em poços quânticos parabólicos de AlGaAs ». Universidade de São Paulo, 2001. http://www.teses.usp.br/teses/disponiveis/76/76131/tde-11112013-162344/.
Texte intégralIn this work we study the electronic structure and electron mobilities in doped wide parabolic quantum wells of AlxGa1-xAs. The subband energies, the wavefunctions, and the effective confining potential profile are obtained by studying selfconsistently the coupled Schrödinger and Poisson equations. Based on the numerical results of the electronic structure, we calculate the quantum and transport mobilities of the system. Usually several subbands are occupied in such systems and they are strongly coupled to each other, the intersubband interaction shows the same importance as the intrasubband one to the electronic transport. We study and analyze the electron mobility of each subband due to the ionized donor scattering and the alloy scattering. We also show the effect of ionized background acceptor impurity scattering
Montanher, Valter César. « Propriedades Óticas de Poços Quânticos de GaAs/AlGaAs ». Universidade de São Paulo, 1997. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-23102017-143621/.
Texte intégralIn this work we investigated the optical properties of GaAs/GaAlAs quantum wells grown by MBE (Molecular Beam Epitaxy) at the Laboratório de Novos Materiais Semicondutores (LNMS) do Instituto de Física da USP, using photoluminescence and photoluminescence-excitation techniques. Two non-intentionally doped samples grown under difterent experimental conditions and with dift\'erent structural limit were analysed. The samples had the same nominal quantum well width (Lw = I 00 Â) but different nominal barrier width (Lb) and the growth-intenuption time at the interfaces. The sample #241 (#419) was grown with (without) growth-interruption at both interfaces of the quantum well and has nominal barrier width ~. = 500 Â (Lb = 300 Â)
Sfigakis, François. « Electron transport in etched GaAs/AlGaAs quantum wires ». Thesis, University of Cambridge, 2006. https://www.repository.cam.ac.uk/handle/1810/284060.
Texte intégralBaratte, Hervé. « Technologie bipolaire hétérojonction AlGaAs/GaAs pour circuits intégrés ». Paris 11, 1985. http://www.theses.fr/1985PA112012.
Texte intégralThe good injection properties of the heterojunction bipolar transistor allow predicting very high frequency performance of the device. An ion-implanted double hétérostructure with graded junctions is well adapted for integrated circuits application. An analytic model, close to reality, helps calibrate an optimized structure. It is also a convenient tool to correlate observed performance to the device internal structure. The epitaxial growth sequence is rather complicated because of the presence of two different heterojunctions (AlGaAs/GaAs and GaAs/AlGaAs) and of two types of dopants (Silicium for n-type and Beryllium for p-type). Thanks to a GaAs none intentionally doped interfacial layer, recombination effects in the junctions are greatly reduced. Then, a rapid thermal annealing treatment of the implanted devices proves to be a suitable method to achieve good activation efficiency while limiting dopants diffusion inside the structure. Further integration of such a device is then analyzed. Very high speed and high density of integration are predicted for future I²L or ELC bipolar heterostructures. The HBT (Heterojunction Bipolar Transistor) is also well adapted for linear application
Ozanam, Cécile. « Oscillateur paramétrique optique en guides d'ondes AlGaAs/A10x ». Sorbonne Paris Cité, 2015. http://www.theses.fr/2015USPCC226.
Texte intégralThis PhD work is about the experimental demonstration of an optical parametric oscillator (OPO; in AlGaAs/A10x waveguides. Inserting thin aluminum oxide (A10x) layers in the GaAs guiding core of the waveguide at a sub-wavelength scale allows us to artificially reach the birefringence which is necessary to get an efficient nonlinear interaction between a TMOO pump at 1064 nm and TE00 signal and idler around 2128 nm. After defining an optical signal and idler-resonant cavity by the means of dielectric mirrors, the oscillation threshold is reached with an internai pump power of 210 mW. This result is the first demonstration of a guided-wave semiconductor OPO in the near infrared. In a second part, we tried to improve the performances of this device following three different paths. The first is the reduction of the propagation losses through a better control of the oxidation step and the insertion of GaInP barriers on each side of the oxidized layers. The second development path is a change in the optical cavity configuration : using a double pump pass cavity has enabled us to slightly reduce the oscillation threshold. The third explored path is the thermal protection of the sample with a glass layer deposited on the top of the waveguides. A part of this PhD work has also been devoted to a similar device for the emission of a coherent radiation around 2000 nm by second harmonic generation from a quantum cascade laser emitting around 4500 nm
Allford, Craig. « Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures ». Thesis, Cardiff University, 2016. http://orca.cf.ac.uk/91151/.
Texte intégralModi, Nihar Triplett Gregory Edward. « Thermal management in GaAs/AlGaAs laser diode structures ». Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.
Texte intégralFeteha, Mohamed Yousef Mohamed. « Heterojunction AlGaAs-GaAs solar cells for space applications ». Thesis, University of Central Lancashire, 1995. http://clok.uclan.ac.uk/18836/.
Texte intégralSCACCABAROZZI, ANDREA. « GaAs/AlGaAs quantum dot intermediate band solar cells ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40117.
Texte intégralSchmidt, Poul-Erik. « Transistor à effet de champ, à hétérojonction et grille isolée : fabrication et étude de SISFET GaAs-AlGaAs et GaAs-GaInAs-AlGaAs ». Paris 11, 1989. http://www.theses.fr/1989PA112306.
Texte intégralThis work is devoted to the study of Semiconductor Insulator Semiconductor Field Effect Transistors (SISFET), a promising device for integrated circuits, since very good threshold voltage control and uniformity can be obtained, and it should be possible to realize complementary circuits. During this work we have for the first time successfully grown and processed pseudomorphic GaAs/GalnAs/A1GaAs SISFET. From electrical measurements and modelling the residual doping level, and the effective barrier height of the A10. 4Ga0. 6As barrier layer has been deduced. Photoluminescense measurements have been performed on the pseudomorphic structures in order to determine the Indium content of the GainAs layer. A self-aligned technology has been established in order to fabricate high performance devices. The process includes first an anisotropic etch of the gate using Reactive Ion Etching. Next a silicon nitride sidewall is formed. A self-aligned ion implantation followed by rapid thermal annealing is used to form highly doped source and drain contacts. DC characterizations are presented. For 1µm SISFETs state-of-the-art results have been obtained, with a transconductance of 240 mS/mm. The transconductance of the pseudomorphic SISFET is even higher with a maximum value of 273 mS/mm. Our SISFET's have a source resistance of only 0. 16 Ωmm which is the lowest ever reported. A very good on-wafer threshold voltage uniformity has been obtained with a standard deviation of only 11mV for the conventional SISFETs. Hot electron effects have been observed and are discussed. We show that this induces a negative differential resistance regime in the the drain current characteristics
Trinko, Tara Rae. « Bottom-Up and Top-Down Controls on Algal Bloom Frequency in Two Shallow Mesotrophic Lakes ». Fogler Library, University of Maine, 2008. http://www.library.umaine.edu/theses/pdf/TrinkoTR2008.pdf.
Texte intégralLeeb, Tobias [Verfasser]. « MBE-Wachstum von ZnMnSe zur Spininjektion in GaAs-AlGaAs-Heterostrukturen = MBE-growth of ZnMnSe for spininjection into GaAs-AlGaAs-heterostructures / Tobias Leeb ». Regensburg : Univ.-Verl. Regensburg, 2009. http://d-nb.info/999400762/34.
Texte intégralKuyucak, Nural. « Algal biosorbents for gold and cobalt ». Thesis, McGill University, 1987. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=75374.
Texte intégralSequestered gold was eluted with a mixture of thiourea and ferric ammonium sulphate solution. Approximately 98% of sequestered gold was eluted with 17 h in a batch contacting system at the optimum solids (biomass)-to-liquid ratio of 5 and pH of 5. At increased temperatures, the gold elution rate increased only slightly. Efficient desorption of cobalt was achieved using CaCl$ sb2$/HCL solution at pH 3. Cobalt elution time was quite short. Temperature affected neither desorption rate nor the equilibrium. The optimum solid-to-liquid ratio was 12 for desorption of cobalt from A. nodosum biomass.
The gold taken up by the biosorbent was deposited in its elemental form.
Available mathematical models, including the REDEQL2 chemical equilibrium model, were tested for theoretical predictions of co-ion competition in attempt to better understand the biosorption mechanism. (Abstract shortened with permission of author.)
Martinez, Joaquin. « Molecular ecology of marine algal viruses ». Thesis, University of Plymouth, 2006. http://hdl.handle.net/10026.1/2459.
Texte intégralCurtis-Jackson, Phillippa Kate. « Characterisation of algal derived organic nitrogen ». Thesis, University of Plymouth, 2006. http://hdl.handle.net/10026.1/2076.
Texte intégralGates, Ruth D. « Seawater temperature and algal-cnidarian symbiosis ». Thesis, University of Newcastle Upon Tyne, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.346445.
Texte intégralCassidy, Keelin Owen. « EVALUATING ALGAL GROWTH AT DIFFERENT TEMPERATURES ». UKnowledge, 2011. http://uknowledge.uky.edu/bae_etds/3.
Texte intégralKemp, Ronelle. « The algal gardens of Patella cochlear ». Thesis, University of Cape Town, 2017. http://hdl.handle.net/11427/26450.
Texte intégralGuo, Jiahua. « Impact of pharmaceuticals on algal species ». Thesis, University of York, 2015. http://etheses.whiterose.ac.uk/12390/.
Texte intégralAchtnich, Thomas Martin. « Charakterisierung von Defekten in epitaktischem ALGaAs hergestellet mittels Molekularstrahlen / ». Lausanne : EPFL, 1988. http://library.epfl.ch/theses/?nr=748.
Texte intégralMAEZAWA, Koichi, Shigeru KISHIMOTO, Makoto YAMAMOTO et Takashi MIZUTANI. « Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs ». Institute of Electronics, Information and Communication Engineers, 2001. http://hdl.handle.net/2237/15005.
Texte intégral