Bibliographies thématiques / Algabal

Littérature scientifique sur le sujet « Algabal »

Auteur : Grafiati
Publié le 10 mars 2023

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Articles de revues sur le sujet "Algabal"

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Awad, Abdel Aziz, Dakhel H. Alzubaidi et Mohamed A. Mohamed. « A STUDY OF ENVIRONMENTAL AWARENESS FOR FARMERS’ SONS IN THE REGION OF ALGABAL ALAKHDAR-LIBYA. » Fayoum Journal of Agricultural Research and Development 23, no 1 (1 janvier 2009) : 8–17. http://dx.doi.org/10.21608/fjard.2009.197043.

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abdelghany, abdelghany, Almahdi Akraeim et Salah eldein Saad. « Evaluation the impact of the transition period on some hematobiochemical and hormonal parameters in Native sheep in Algabal Alakhdar governorate in Libya ». Benha Veterinary Medical Journal 40, no 2 (1 juillet 2021) : 19–23. http://dx.doi.org/10.21608/bvmj.2021.71045.1390.

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Remmik, Marvi, Liina Lepp et Ingrid Koni. « Algajad õpetajad koolijuhi ja kolleegide toetusest esimestel tööaastatel ». Eesti Haridusteaduste Ajakiri. Estonian Journal of Education 3, no 1 (30 avril 2015) : 173–201. http://dx.doi.org/10.12697/eha.2015.3.1.08.

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Esimestel tööaastatel peavad algajad õpetajad toime tulema erinevate olukordadega, sest sel ajal arenevad õpetamisoskused, saadakse õpetajate kogukonna liikmeks ning kujuneb õpetaja identiteet. Uurimused on näidanud, et algajad õpetajad vajavad ametisse sisseelamisel toetust, mistõttu on loodud ka mitmesuguseid tugisüsteeme. Samas on vähe tähelepanu pööratud sellele, kuidas kohanevad algajad õpetajad koolikeskkonnaga, millisena tajutakse erinevaid koolikollektiivi liikmeid enda toetajana ning mida ootavad algajad õpetajad koolikeskkonnalt kui tervikult, et õpetajatöösse paremini sisse elada. Artikli eesmärk on analüüsida algajate õpetajate kirjeldusi kohanemisest koolikeskkonnaga ja institutsiooni erinevate liikmete rolli selles. Andmete kogumiseks salvestati täies mahus ühe aasta vältel toimunud kutseaasta seminarid. Seminaridel osales 13 algajat õpetajat. Tulemused näitasid, et algajate õpetajate kogemused kooliga kohanemisel olid erinevad. Eduka kohanemise eeldusena nimetati kolleegide toetavat hoiakut ja algajate õpetajate püüdlusi igas olukorras hakkama saada. Kõige sagedasemaks koolikeskkonnaga mittekohanemise põhjuseks peeti algajate õpetajate ja institutsiooni liikmete erinevusi väärtushinnangutes. Koolijuhi osa algaja õpetaja toetajana hinnati väheoluliseks, kuna algajatel õpetajatel tööalased kokkupuuted koolijuhiga peaaegu puudusid. Summary
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Kang, Donghan, et Keugtae Kim. « Real Wastewater Treatment Using a Moving Bed and Wastewater-Borne Algal–Bacterial Consortia with a Short Hydraulic Retention Time ». Processes 9, no 1 (7 janvier 2021) : 116. http://dx.doi.org/10.3390/pr9010116.

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Algal–bacterial consortium is a promising technology, combined with wastewater treatment plants, because algae produce molecular oxygen for nitrification and organic removal and reduce carbon dioxide emissions. However, algal–bacterial consortia based on suspended growth require a relatively long hydraulic retention time (HRT) of 4 d to 6 d for removal of organic matter and nutrients. For the algal–bacterial consortia in a photobioreactor (PBR) containing a moving bed, the organic matter and nutrient removal and the community structure of algal–bacterial consortia were investigated to determine the performance under a relatively short HRT of 2.5 d. Moving media containing algal–bacterial consortia enhanced the photosynthetic oxygen concentration (0.2 mg dissolved oxygen (DO)·L−1 to 5.9 mg DO·L−1), biochemical oxygen demand removal (88.0% to 97.2%), ammoniacal nitrogen removal (33.8% to 95.3%), total nitrogen removal (61.6% to 87.7%), total phosphate removal (66.4% to 88.7%), algal growth (149.3 mg algae·L−1 to 285.4 mg algae·L−1), and settleability (algae removal efficiency of 20.6% to 71.2%) compared with those of a PBR without moving media (SPBR). Although biomass uptake was the main mechanism for nutrient removal in the SPBR, both biomass uptake and denitrification were the main mechanisms in the PBR with moving media (MBPBR). The bacterial community also changed under the moving media condition. This study shows that moving media might be an essential parameter for PBRs with a short HRT to enhance nutrient removal and settleability.
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Kang, Donghan, et Keugtae Kim. « Real Wastewater Treatment Using a Moving Bed and Wastewater-Borne Algal–Bacterial Consortia with a Short Hydraulic Retention Time ». Processes 9, no 1 (7 janvier 2021) : 116. http://dx.doi.org/10.3390/pr9010116.

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Algal–bacterial consortium is a promising technology, combined with wastewater treatment plants, because algae produce molecular oxygen for nitrification and organic removal and reduce carbon dioxide emissions. However, algal–bacterial consortia based on suspended growth require a relatively long hydraulic retention time (HRT) of 4 d to 6 d for removal of organic matter and nutrients. For the algal–bacterial consortia in a photobioreactor (PBR) containing a moving bed, the organic matter and nutrient removal and the community structure of algal–bacterial consortia were investigated to determine the performance under a relatively short HRT of 2.5 d. Moving media containing algal–bacterial consortia enhanced the photosynthetic oxygen concentration (0.2 mg dissolved oxygen (DO)·L−1 to 5.9 mg DO·L−1), biochemical oxygen demand removal (88.0% to 97.2%), ammoniacal nitrogen removal (33.8% to 95.3%), total nitrogen removal (61.6% to 87.7%), total phosphate removal (66.4% to 88.7%), algal growth (149.3 mg algae·L−1 to 285.4 mg algae·L−1), and settleability (algae removal efficiency of 20.6% to 71.2%) compared with those of a PBR without moving media (SPBR). Although biomass uptake was the main mechanism for nutrient removal in the SPBR, both biomass uptake and denitrification were the main mechanisms in the PBR with moving media (MBPBR). The bacterial community also changed under the moving media condition. This study shows that moving media might be an essential parameter for PBRs with a short HRT to enhance nutrient removal and settleability.
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Kuzuhara, M., K. Kim et K. Hess. « Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors ». IEEE Transactions on Electron Devices 36, no 1 (janvier 1989) : 118–23. http://dx.doi.org/10.1109/16.21190.

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Ketterson, A. A., et H. Morkoc. « GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations ». IEEE Transactions on Electron Devices 33, no 11 (novembre 1986) : 1626–34. http://dx.doi.org/10.1109/t-ed.1986.22720.

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Cirlin, G. E., R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, I. P. Soshnikov, S. A. Kukushkin, L. Leandro, T. Kasama et Nika Akopian. « AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates ». Journal of Physics D : Applied Physics 50, no 48 (8 novembre 2017) : 484003. http://dx.doi.org/10.1088/1361-6463/aa9169.

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Gai, Hongxing, Jun Deng, Jian Jun Li, Guang Di Shen et Jianxin Chen. « Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells ». Materials Science Forum 475-479 (janvier 2005) : 1685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1685.

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According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.
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Terpitskiy, A. N., I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko et G. E. Cirlin. « MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire ». Journal of Physics : Conference Series 2086, no 1 (1 décembre 2021) : 012039. http://dx.doi.org/10.1088/1742-6596/2086/1/012039.

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Abstract Heterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1 peak corresponded to hexagonal phases of germanium.
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Thèses sur le sujet "Algabal"

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LIMA, Janirza Cavalcante da Rocha. « Espelho quebrado - Algafan e Desvio ». Universidade Federal de Pernambuco, 1987. https://repositorio.ufpe.br/handle/123456789/17025.

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Submitted by Caroline Falcao (caroline.rfalcao@ufpe.br) on 2016-05-31T17:36:23Z No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) 39L732e Dissertação.pdf: 11631529 bytes, checksum: 7535b3e019fc6480770102525182df41 (MD5)
Made available in DSpace on 2016-05-31T17:36:23Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) 39L732e Dissertação.pdf: 11631529 bytes, checksum: 7535b3e019fc6480770102525182df41 (MD5) Previous issue date: 1987-06
A farmacodependência é um fenômeno de todos os tempos e de todos os povos. É um fenômeno permanente, variando segundo o critério relativo das normas sócio-culturais de cada sociedade, numa dada época. Através dos tempos, o homem utilizou substâncias diversas no intuito de modificar sua percepção do mundo e transformar sua vivência subjetiva. Este estudo objetiva verificar, na prática, até que ponto a condição de desviante (usuário de Algafan) é sancionada e reforçada pelo aparelho institucional. O referencial empírico foi a divisão de Serviços técnicos da Secretaria da Segurança Pública de Pernambuco, onde se operacionaliza o disposto no Decreto –lei n. 6.368 e tendo dentre a clientela atendida, o dependente de Cloridrato de Destro-propoxifeno, conhecido comercialmente sob o nome de Algafan Composto. Apoiada em dados secundários, entrevistas e, sobretudo, na observação participante, a análise se desenvolve em três momentos: inicialmente, procura explicitar como se configura o usuário de Algafan; numa segunda etapa, tenta delinear os momentos marcantes da produção da identidade desviante onde as relações se estabelecem numa forma dialética entre acusados (dependentes de algafan) e acusadores (lei, família, agentes policiais e equipe terapêutica); finalmente, através de uma análise dos discursos dos dependentes, busca entender como eles percebem a situação em que vivem e os projetos que elaboram. Destacam-se, nas conclusões, os aspectos mais significativos dessa interpretação, face aos objetivos a que se propõe o estudo e o marco referencial teórico que o norteou. O estudo revela que a operacionalidade do Decreto-lei n.6.368 vem, antes, reforçar a condição de desviante, e não, ao contrário, recuperá-lo, tendo a Divisão de Serviçoes Técnicos um papel marcante nesse processo. Mostra também que, apesar de perceberem-se como outsiders, os dependentes ainda elaboram projetos de vida, na tentativa de superação de suas carências afetivas, econômicas e sociais. Eles anseiam pela existência de espaços sociais e psicológicos próprios onde possam se inserir e aos quais sintam pertencer.
La farmacodependencia es um hecho de todos los tiempos y todos los pueblos. Se trate de un fenómeno permanente, cuyas variaciones obedecen al criterio, relativo, de las normas sociocultureles de cada sociedad en determinada época. A través de los tiempos el hombre ha utilizado distintos tipos de drogas, con miras a cambiar su percepción del mundo y transformar sus experiencias subjetivas. El presente estudio se propone comprobar en la práctica, hasta que punto la condición de descarriado (adicto al Algafan) es sancionada y reforzada por el aparato institucional. El marco empirico ha sido la Division de Servicios Tecnicos de la Secretaria de Seguridad Pública del Estado de Pernambuco, donde se cumple dos dispuesto por el Decreto n. 6.368. Los clientes son los dependientes del Clorhidrato de destropropoxifeno, comercialmente conocido como “Algafan Composto”. Con base en datos secundarios, entrevistas y, sobre todo, en la observación participativa, el análisis se desarrolla en tres etapas: inicialmente trata de caracterizar el adicto al “Algafan”; en seguida intenta definir los momentos marcantes del proceso de surgimiento de la identidad discrepante, durante el cual se establecen las relaciones dialécticas entre acusados (dependientes de “Algafan”) y acusadores (ley, familia, agentes de la policía y equipo terapéutico); finalmente, a través del análisis de las declaraciones de los drogadictos, se trata de entender de que forma ellos captan la propia situación y los planos que hacen. En las conclusiones sobresalen los rasgos más significativos de esa interpretación, en relación a los objetivos de estudio y a su marco teorico. Este trabajo revela que la aplicación del Decreto n. 6.368 refuerza la condición del descarriado, en vez de recuperarlo; y la División de Servicios Técnicos juega un papel fundamental en ese proceso. Muestra, además, el estudio que, prese al hecho de reconocerse como “outsiders”, los dependientes siguen elaborando proyectos de vida, en el intento de superar sus necesidades afectivas, económicas e sociales. Ellos anhelar espacios sociales y sicológicos propios, en lo que se puedan incluir y a los cuales sientan pertenecer.
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Mouetsi, Souheil. « Contribution à l’étude du bruit basse fréquence dans des hétérostructures AlGaAs/GaAs/AlGaAs ». Reims, 2010. http://theses.univ-reims.fr/sciences/2010REIMS023.pdf.

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Le travail présenté dans ce mémoire a pour objet la caractérisation d’un gaz bidimensionnel d’électrons dans une hétérostructure AlGaAs/GaAs/AlGaAs par la méthode de bruit basse fréquence à des différentes tensions de polarisation et à différentes températures (4 - 300K). Plusieurs sources de bruit contribuant au spectre total de bruit (bruit thermique, bruit de génération - recombinaison (G-R) et bruit en 1/f) ont été identifiés. Grâce au bruit thermique, nous avons montré qu’il est possible d’accéder aux résistances de contact. L’analyse du bruit de G-R a permis d’identifier des défauts sources de ce type de bruit. Pour ce faire, il a fallu déterminer les énergies d’activation thermiques et les sections efficaces de capture caractérisant ces défauts. L’étude du bruit en 1/f a été faite de deux manières ; d’abord l’application du modèle de Hooge a permis de montrer que ce bruit est causé essentiellement par la fluctuation de la mobilité du réseau. Puis, l’application du modèle modifié de Handel a permis de renforcer la proposition de la fluctuation de la mobilité
The study presented in this manuscript is devoted to characterize a two dimensional electron gaz (2DEG) in a AlGaAs/GaAs/AlGaAs heterostructure by using the low frequency noise technique. The study was made for different bias voltages and at different temperatures (4 - 300 K). Several noise sources (thermal noise, generation-recombination noise (G-R) and 1/f noise) contributing to the total spectrum were identified. With thermal noise, we have shown that it was possible to access to the contact resistances. Analysis of the G-R noise has allowed identification of defects responsible of this noise. To do this, it was necessary to determine thermal activation energies and capture cross sections characterizing these defects. The study of 1/f noise was made in two ways: first, application of the Hooge model showed that this noise is mainly caused by the network mobility fluctuation. Then, applying the modified model of Handel has strengthened the proposal fluctuation of the mobility
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Ulman, Morrison. « Femtosecond carrier dynamics in AlGaAs ». Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/17396.

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Affandy, Gabriel, Donald Bridges, Quinn Daniels, Drew Janicek, Julia Martin, Edward Poling, Jordan Schmalz et al. « HAWAII ALGAL BIOFUEL ». Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/32891.

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This report investigates the feasibility and affordability of producing algae-derived biofuel in Hawaii for military aviation. The authors evaluated methods for cultivation of algae, investigated the processes necessary to locally refine bio-oil into bio-kerosene, researched the environmental impacts of cultivation and refinement facilities in Hawaii, and studied the resultant cost per gallon of bio-kerosene production. Based on the current state of technology and the proposed system of systems architecture, this report estimates that bio-kerosene can be produced for $8.00 - 22.87/gal, indicating that although this system is technically feasible, it is unlikely to be affordable at current fuel prices without ongoing subsidy or further technical innovation.
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Lam, Hoi-yeung Ironside. « Marine microalgal dynamics at Crooked and Lamma Islands, Hong Kong ». Click to view the E-thesis via HKUTO, 2002. http://sunzi.lib.hku.hk/hkuto/record/B43895323.

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Held, Lucas. « Implantation isolation in AlGaAs/GaAs structures ». Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32366.

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In this work the effect of implantation isolation in vertical cavity surface emitting laser (VCSEL) samples have been investigated cross sectional measurements using scanning spreading resistance microscopy (SSRM). The samples consist of two AlGaAs/GaAs Distributed Bragg Reflectors (DBR) structures with a GaAs quantum well region sandwiched in between them. The samples were implanted with 330 and 660 keV helium ions using doses from 7*1013 cm-2 to 1*1016 cm-2. Due to variations and uncertainties in the SSRM output quantitative values of resistivity in the highly resistive regions created by ion implantations were not attained. Relative differences, however, were notable for the different doses. It was found that the resistive regions were not located as deep inside the samples for the 660 keV implantations as for the 330 keV. This does not agree with the simulations performed. A correlation between implantation dose and the depth of the resistive region created was also found - higher doses caused resistive regions deeper inside the samples. Furthermore, as the implantation dose is increased the resistive region is confined to only about one AlGaAs/GaAs period of width at the same depth as the wide resistive region for lower doses, i.e. the structure is somehow regaining its conductive properties in the shallow areas only leaving a thin stripe of the resistive region at the deepest end for higher implantation doses. Samples implanted with low He doses were heated in a vacuum furnace at 300, 350 and 380 ˚C. The heated samples showed a tendency to regain the conductivity in the resistive region, similar to the samples implanted with high doses. This suggests that there may be some kind of annealing effect for higher doses, possibly due to the increased flux for higher doses.
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Brown, Robert James. « Electronic transport in GaAs/AlGaAs microstructures ». Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335681.

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Sharma, Adesh. « Electronic transport in GaAs-AlGaAs heterostructures ». Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.

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John, Gareth. « Spin relaxation phenomena in GaAs/AlGaAs ». Thesis, University of Southampton, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.433964.

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Chatterjee, Ritwik 1974. « Linearity of power AlGaAs/GaAs HBTs ». Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47494.

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Livres sur le sujet "Algabal"

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Hymnen, Pilgerfahrten, Algabal. Stuttgart : Klett-Cotta, 1987.

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Prado, Daila Alejandra. Algazul. Buenos Aires, República Argentina : Libros del Empedrado, 1991.

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Pihelgas, Carolina. Metsas algavad hääled. Tallinn : Eesti Sihtasutus, 2010.

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Alverny, Marie-Thérèse d'. Algazel dans l'Occident latin. [s.l.] : Académie du Royaume du Maroc, 1985.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., dir. AlGaAs heterojunction lasers. [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Division, 1988.

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Goldstein, B. AlGaAs heterojunction lasers. Hampton, Va : Langley Research Center, 1988.

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1952-, Osborne Bruce A., dir. Algal photosynthesis. New York : Chapman and Hall, 1992.

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Geider, Richard J., et Bruce A. Osborne. Algal Photosynthesis. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9.

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Bajpai, Rakesh, Aleš Prokop et Mark Zappi, dir. Algal Biorefineries. Dordrecht : Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7494-0.

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Prokop, Aleš, Rakesh K. Bajpai et Mark E. Zappi, dir. Algal Biorefineries. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-20200-6.

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Chapitres de livres sur le sujet "Algabal"

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Druart, Thérèse-Anne. « Algazali ». Dans A Companion to Philosophy in the Middle Ages, 118–26. Oxford, UK : Blackwell Publishing Ltd, 2007. http://dx.doi.org/10.1002/9780470996669.ch17.

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Bonadeo, Cecilia Martini, Angela Guidi, Antonella Straface, Roxanne D. Marcotte, Cecilia Martini Bonadeo, Samuel Noble, Emily J. Cottrell et al. « Algazel ». Dans Encyclopedia of Medieval Philosophy, 73. Dordrecht : Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-1-4020-9729-4_28.

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Geider, Richard J., et Bruce A. Osborne. « Net Gas Exchange ». Dans Algal Photosynthesis, 1–31. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_1.

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Geider, Richard J., et Bruce A. Osborne. « Using Isotopes to Measure Gas Exchange ». Dans Algal Photosynthesis, 32–70. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_2.

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Geider, Richard J., et Bruce A. Osborne. « Fluorescence Techniques ». Dans Algal Photosynthesis, 71–92. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_3.

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Geider, Richard J., et Bruce A. Osborne. « Light Sources and Related Accessories ». Dans Algal Photosynthesis, 93–106. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_4.

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Geider, Richard J., et Bruce A. Osborne. « Measuring Photosynthetic Pigments ». Dans Algal Photosynthesis, 107–21. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_5.

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Geider, Richard J., et Bruce A. Osborne. « Light Utilization and Optical Properties of Algae ». Dans Algal Photosynthesis, 122–55. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_6.

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Geider, Richard J., et Bruce A. Osborne. « The Photosynthesis-Light Response Curve ». Dans Algal Photosynthesis, 156–91. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_7.

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Geider, Richard J., et Bruce A. Osborne. « Remote Sensing of Algal Photosynthesis ». Dans Algal Photosynthesis, 192–204. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4757-2153-9_8.

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Actes de conférences sur le sujet "Algabal"

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Bell, Fiona, Latifa Al Naimi, Ella McQuaid et Mirela Alistar. « Designing with Alganyl ». Dans TEI '22 : Sixteenth International Conference on Tangible, Embedded, and Embodied Interaction. New York, NY, USA : ACM, 2022. http://dx.doi.org/10.1145/3490149.3501308.

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Rabinovich, O., S. Didenko, S. Legotin et M. Basalevskiy. « Creating AlGaAs Photodetectors ». Dans International Conference on Photonics, Optics and Laser Technology. SCITEPRESS - Science and and Technology Publications, 2015. http://dx.doi.org/10.5220/0005334100870089.

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NISHII, Katsunori, Toshinobu MATSUNO, Osamu ISHIKAWA, Hideki YAGITA et Kaoru INOUE. « Novel High-Performance N-AlGaAs/InGaAs/N-AlGaAs Pseudomorphic DH MODFETs ». Dans 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.s-iiia-14.

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Inoue, K., K. Nishii, T. Matsuno et T. Onuma. « Strained N-AlGaAs/InGaAs/N-AlGaAs selectively-doped double-heterojunction FET ». Dans 1987 International Electron Devices Meeting. IRE, 1987. http://dx.doi.org/10.1109/iedm.1987.191448.

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Hwang, S. J., J. F. Zhou, J. J. Song, L. Pawlowicz et M. E. Kim. « Photoluminescence in heavily doped AlGaAs/GaAs heterojunction bipolar transistors ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.thy31.

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Low-temperature (15 K) photoluminescence (PL) in molecular-beam epitaxy-grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) has been studied. Both cw and pulsed lasers were used as excitation sources. These HBT samples are heavily doped with Si and Be in the n+-GaAs and p+-GaAs layers, respectively. The origin of each PL signal is identified by removing each layer. Three PL peaks from the n-AlGaAs layer were observed. We found a direct correlation between height of PL peaks in the n-AlGaAs layer and device performance (current gain). We have also studied the correlation between PL in the n-AlGaAs layer and the current gain and Be redistribution from the p+-GaAs base layer into emitter layers while these layers were being grown. Poor current gain was observed as the Be diffusion depth into the emitter layers became large. The Be diffusion depth was measured by means of secondary ion mass spectroscopy. A sharp Be-related peak in the PL spectra from the n-AlGaAs layer clearly indicates Be diffusion into the emitter layers.
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Mathine, David L. « Integration of AlGaAs devices ». Dans Critical Review Collection. SPIE, 1998. http://dx.doi.org/10.1117/12.300611.

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Aitchison, J. S., A. Villeneuve, J. U. Kang, P. G. Wigley et G. I. Stegeman. « An Integrated Saturable Absorber Employing Spatial Solitons. » Dans Nonlinear Guided Waves and Their Applications. Washington, D.C. : Optica Publishing Group, 1995. http://dx.doi.org/10.1364/nlgw.1995.nsac5.

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Semiconductors and in particular AlGaAs, have proved to be optimum nonlinear materials when operated below the half band gap. Large phase shifts have been observed, with a minimal nonlinear absorption. The large nonlinear refractive index found in AlGaAs can also be used to observe spatial solitons, at lower power levels that have previously been employed in CS2 and glass waveguides[1,2]. AlGaAs is thus an ideal candidate for the study and implementation of devices which utilise spatial solitons[3]. Here we report on a device which employs spatial solitons for all-optical switching[4].
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Tang, Wade C., et Hal J. Rosen. « Facet heating in AlGaInP 670 nm double-heterojunction visible lasers ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mb2.

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Visible-laser diodes are attractive light sources in optical applications such as high-density optical storage devices and laser printers. The maximum output power attainable for AlGaInP lasers is currently not as high as that realized in AlGaAs lasers, but it is constantly improving. Studies carried out in AlGaAs (780-840 nm) lasers have indicated that high facet temperature plays an important role in facet degradation and catastrophic optical damage (COD). We will present data on the facet temperature measurements on 670 nm AlGaInP and 830 nm AlGaAs double-heterojunction lasers.
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Quigley, J. H., H. Y. Lee, M. D. Crook, M. J. Hafich, G. Y. Robinson, Du Li et N. Otsuka. « High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy ». Dans Quantum Wells for Optics and Opto-Electronics. Washington, D.C. : Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tue9.

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The materials system AlGaAs/GaAs has been used extensively for synthesis of quantum well (QW) optoelectronic devices. The III-V alloy InGaP provides an alternative to AlGaAs for confinement of GaAs QWs. At the composition for lattice matching to GaAs, In0.48Ga0.52P exhibits a room temperature bandgap of 1.89 eV, somewhat larger than that of Al0.3Ga0.7As, and the In0.48Ga0.52P/GaAs valence band offset (ΔEv) is about 0.3 eV, larger than that of the Al0.3Ga0.52As/GaAs heterojunction. Furthermore, InGaP exhibits a lower concentration of deep levels than AlGaAs, and InGaP does not oxidize as readily as AlGaAs. InGaP/GaAs QWs have been previously reported by Razeghi et al., who used metalorganic chemical vapor deposition to grow wells as narrow as 15Å(1) We report here the growth of InGaP/GaAs QWs by gas-source molecular beam epitaxy (GSMBE). Single QWs as narrow as 6Å and multiple QW superlattices with abrupt interfaces are described.
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Kadhim, Alaa, et Rand Mahmoud Mohamed. « Visual cryptography for image depend on RSA & ; AlGamal algorithms ». Dans 2016 Al-Sadeq International Conference on Multidisciplinary in IT and Communication Science and Applications (AIC-MITCSA). IEEE, 2016. http://dx.doi.org/10.1109/aic-mitcsa.2016.7759935.

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Rapports d'organisations sur le sujet "Algabal"

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Hamilton, Cyd E. Exploring the Utilization of Complex Algal Communities to Address Algal Pond Crash and Increase Annual Biomass Production for Algal Biofuels. Office of Scientific and Technical Information (OSTI), mars 2014. http://dx.doi.org/10.2172/1220809.

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Lehman, John A. Nonlinear Optical Effects in GaAs/AlGaAs Superlattices. Fort Belvoir, VA : Defense Technical Information Center, novembre 1989. http://dx.doi.org/10.21236/ada218543.

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Ferrell, John, et Valerie Sarisky-Reed. National Algal Biofuels Technology Roadmap. Office of Scientific and Technical Information (OSTI), mai 2010. http://dx.doi.org/10.2172/1218560.

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Ghirardi, Maria L. Algal Systems for Hydrogen Photoproduction. Office of Scientific and Technical Information (OSTI), octobre 2015. http://dx.doi.org/10.2172/1222789.

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White, Rebecca L., et Mike Tyler. Sapphire Energy - Integrated Algal Biorefinery. Office of Scientific and Technical Information (OSTI), juillet 2015. http://dx.doi.org/10.2172/1343302.

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Thomas, Catherine C., Jonathan Broussard et Victor F. Medina. Chitosan as a Coagulant and Precipitant of Algae Present in Backwater. U.S. Army Engineer Research and Development Center, juillet 2022. http://dx.doi.org/10.21079/11681/44904.

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The purpose of this technical note (TN) is to highlight the current state of knowledge of algal flocculation by chitosan and identify data gaps existing between specific algal characteristics and chitosan binding efficiency. Published relationships and correlations between the quality of backwaters and the prevalence of algae, a baseline for flocculation efficiency of microalgae, and ideal treatment instances for algal removal by way of chitosan flocculation and precipitation will be identified.
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Chu, Jerome T., et Sheng S. Li. Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors. Fort Belvoir, VA : Defense Technical Information Center, juin 1997. http://dx.doi.org/10.21236/ada325634.

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Abodeely, Jared, Daniel Stevens, Allison Ray, Deborah Newby et Kastli Schaller. Algal Supply System Design - Harmonized Version. Office of Scientific and Technical Information (OSTI), mars 2013. http://dx.doi.org/10.2172/1091350.

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Barry, Amanda, Alexis Wolfe, Christine English, Colleen Ruddick et Devinn Lambert. 2016 National Algal Biofuels Technology Review. Office of Scientific and Technical Information (OSTI), juin 2016. http://dx.doi.org/10.2172/1259407.

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Author, Not Given. Algal Biology Toolbox Workshop Summary Report. Office of Scientific and Technical Information (OSTI), août 2016. http://dx.doi.org/10.2172/1324030.

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