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Littérature scientifique sur le sujet « Advanced-Device »

Auteur : Grafiati

Publié le 9 mars 2023

Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "Advanced-Device"

Smathers, Ralph L. « Advanced Breast Biopsy Instrumentation Device ». American Journal of Roentgenology 175, n^o 3 (septembre 2000) : 801–3. http://dx.doi.org/10.2214/ajr.175.3.1750801.

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Priporov, I. E. « ADVANCED DEVICE FOR FEED’S MIXING ». Техника и технологии в животноводстве, n^o 3 (2022) : 63–68. http://dx.doi.org/10.51794/27132064-2022-3-63.

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Hicham, Magri, Noreddine Abghour et Mohammed Ouzzif. « Device-To-Device (D2D) Communication Under LTE-Advanced Networks ». International Journal of Wireless & ; Mobile Networks 8, n^o 1 (29 février 2016) : 11–22. http://dx.doi.org/10.5121/ijwmn.2016.8102.

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Lei Lei, Zhangdui Zhong, Chuang Lin et Xuemin Shen. « Operator controlled device-to-device communications in LTE-advanced networks ». IEEE Wireless Communications 19, n^o 3 (juin 2012) : 96–104. http://dx.doi.org/10.1109/mwc.2012.6231164.

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Liu, Jiajia, Nei Kato, Jianfeng Ma et Naoto Kadowaki. « Device-to-Device Communication in LTE-Advanced Networks : A Survey ». IEEE Communications Surveys & ; Tutorials 17, n^o 4 (2015) : 1923–40. http://dx.doi.org/10.1109/comst.2014.2375934.

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Zhang, Dan, Xiaojing Su, Hao Chang, Hao Xu, Xiaolei Wang, Xiaobin He, Junjie Li et al. « Advanced process and electron device technology ». Tsinghua Science and Technology 27, n^o 3 (juin 2022) : 534–58. http://dx.doi.org/10.26599/tst.2021.9010049.

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Singh, Sonali. « Advanced CO2 Sensing Device in Vehicle ». International Journal for Research in Applied Science and Engineering Technology 8, n^o 7 (31 juillet 2020) : 28–33. http://dx.doi.org/10.22214/ijraset.2020.7007.

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Lee, A., T. Usmonov, B. Norov et S. Melikuziev. « Advanced device for cleaning drain wells ». IOP Conference Series : Materials Science and Engineering 883 (21 juillet 2020) : 012181. http://dx.doi.org/10.1088/1757-899x/883/1/012181.

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IWASAKI, Kiyotaka. « Advanced Medical Device and Regulatory Science ». Journal of the Society of Mechanical Engineers 118, n^o 1155 (2015) : 85–88. http://dx.doi.org/10.1299/jsmemag.118.1155_85.

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Hasegawa, Hideki. « Advanced mesoscopic device concepts and technology ». Microelectronic Engineering 53, n^o 1-4 (juin 2000) : 29–36. http://dx.doi.org/10.1016/s0167-9317(00)00262-8.

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Thèses sur le sujet "Advanced-Device"

Feng, Junyi. « Device-to-Device Communications in LTE-Advanced Network ». Télécom Bretagne, 2013. http://www.telecom-bretagne.eu/publications/publication.php?idpublication=14215.

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La communication device-to-device (D2D) est un nouvel aspect prometteur dans les réseaux LTE-Advanced. Elle est mise en place pour permettre une détection efficace et une communication de proximité entre mobiles. Grâce aux capacités D2D, les mobiles de proximité sont capables de se détecter entre eux en utilisant la technologie radio LTE et de communiquer entre eux via un lien direct. Cette thèse porte sur la conception, la coordination et les tests d'un réseau hybride avec la technologie D2D et les communications cellulaires. Les exigences de conception et les choix des fonctions dans la couche physique et MAC qui permettent la détection D2D et la communication reposant sur les réseaux LTE sont analysés. De plus, une stratégie de planification centralisée dans la station de base est proposée afin de coordonner les communications de données D2D en liaison descendante pour le réseau LTE FDD. Cette stratégie de planification combine de multiple techniques telles que le mode de sélection, l'allocation des ressources et d'énergie, afin d'améliorer les performances des utilisateurs dans une cellule. Enfin, les performances des communications de données D2D reposant sur le système LTE sont mesurées à partir d'un simulateur, au niveau système, avec un scénario comportant de multiples liens de communication
Device-to-device (D2D) communication is a promising new feature in LTE-Advanced networks. It is brought up to enable efficient discovery and communication between proximate devices. With D2D capability, devices in physical proximity could be able to discover each other using LTE radio technology and to communicate with each other via a direct data path. This thesis is concerned with the design, coordination and testing of a hybrid D2D and cellular network. Design requirements and choices in physical and MAC layer functions to support D2D discovery and communication underlaying LTE networks are analyzed. In addition, a centralized scheduling strategy in base station is proposed to coordinate D2D data communication operating in LTE spectrum. The scheduling strategy combines multiple techniques, including mode selection, resource and power allocation, to jointly achieve an overall user performance improvement in a cell. Finally the performances of D2D data communication underlaying LTE system are calibrated in a multi-link scenario via system-level simulation

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Wu, Yue. « Advanced technologies for device-to-device communications underlaying cellular networks ». Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/15391/.

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The past few years have seen a major change in cellular networks, as explosive growth in data demands requires more and more network capacity and backhaul capability. New wireless technologies have been proposed to tackle these challenges. One of the emerging technologies is device-to-device (D2D) communications. It enables two cellular user equipment (UEs) in proximity to communicate with each other directly reusing cellular radio resources. In this case, D2D is able to offload data traffic from central base stations (BSs) and significantly improve the spectrum efficiency of a cellular network, and thus is one of the key technologies for the next generation cellular systems. Radio resource management (RRM) for D2D communications and how to effectively exploit the potential benefits of D2D are two paramount challenges to D2D communications underlaying cellular networks. In this thesis, we focus on four problems related to these two challenges. In Chapter 2, we utilise the mixed integer non-linear programming (MINLP) to model and solve the RRM optimisation problems for D2D communications. Firstly we consider the RRM optimisation problem for D2D communications underlaying the single carrier frequency division multiple access (SC-FDMA) system and devise a heuristic sub-optimal solution to it. Then we propose an optimised RRM mechanism for multi-hop D2D communications with network coding (NC). NC has been proven as an efficient technique to improve the throughput of ad-hoc networks and thus we apply it to multi-hop D2D communications. We devise an optimal solution to the RRM optimisation problem for multi-hop D2D communications with NC. In Chapter 3, we investigate how the location of the D2D transmitter in a cell may affect the RRM mechanism and the performance of D2D communications. We propose two optimised location-based RRM mechanisms for D2D, which maximise the throughput and the energy efficiency of D2D, respectively. We show that, by considering the location information of the D2D transmitter, the MINLP problem of RRM for D2D communications can be transformed into a convex optimisation problem, which can be efficiently solved by the method of Lagrangian multipliers. In Chapter 4, we propose a D2D-based P2P le sharing system, which is called Iunius. The Iunius system features: 1) a wireless P2P protocol based on Bittorrent protocol in the application layer; 2) a simple centralised routing mechanism for multi-hop D2D communications; 3) an interference cancellation technique for conventional cellular (CC) uplink communications; and 4) a radio resource management scheme to mitigate the interference between CC and D2D communications that share the cellular uplink radio resources while maximising the throughput of D2D communications. We show that with the properly designed application layer protocol and the optimised RRM for D2D communications, Iunius can significantly improve the quality of experience (QoE) of users and offload local traffic from the base station. In Chapter 5, we combine LTE-unlicensed with D2D communications. We utilise LTE-unlicensed to enable the operation of D2D in unlicensed bands. We show that not only can this improve the throughput of D2D communications, but also allow D2D to work in the cell central area, which normally regarded as a “forbidden area” for D2D in existing works. We achieve these results mainly through numerical optimisation and simulations. We utilise a wide range of numerical optimisation theories in our works. Instead of utilising the general numerical optimisation algorithms to solve the optimisation problems, we modify them to be suitable for the specific problems, thereby reducing the computational complexity. Finally, we evaluate our proposed algorithms and systems through sophisticated numerical simulations. We have developed a complete system-level simulation framework for D2D communications and we open-source it in Github: https://github.com/mathwuyue/py- wireless-sys-sim.

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Lin, Meifang. « Robust organic light emitting device with advanced functional materials and novel device structures ». HKBU Institutional Repository, 2008. http://repository.hkbu.edu.hk/etd_ra/939.

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Hadimani, Ravi L. « Advanced magnetoelastic and magnetocaloric materials for device applications ». Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54960/.

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Magnetocaloric and magnetoelastic materials can be utilised in various device applications and have a potential to increase their efficiency by a considerable amount. In this thesis, Gd5(SixGei_x)4 is extensively researched on its magnetic properties such as magnetic phase transition temperature, magnetostriction, magnetoresistance and anisotropy. Field induced phase transition in Gd5(SixGei_x)4 was observed in several compositions and the rate of change of the first order phase transition temperature was determined to be approximately 5 K/Tesla. Various methods of transition temperature measurements were compared and the Arrott plot technique was determined to be accurate method for magnetocaloric materials. An advanced technique based on Arrott plots was developed to estimate the second order phase transition temperature when it is suppressed by the first order phase transition. This technique was also extended to estimate the transition temperature of mixed phase alloys. Field induced phase transition at high temperature using high magnetic field measurements up to 9 Tesla were carried out on two compositions of Gd5(SixGei-x)4 for x=0.5 and x=0.475 to validate the Arrott plot technique. Magnetostriction measurements were carried out on Gd5(SixGei_x)4 for various compositions. Fine structure was observed in the magnetostriction measurement in single crystal and polycrystalline Gd5Si1.95Ge2.05 samples but not on other compositions, which might be due to the presence of a secondary phase. It was demonstrated that a giant magnetostriction of the order of 1813 ppm could be obtained by varying the temperature using a Peltier cell and removing the requirement of bulky equipment such as Physical Properties Measurement System (PPMS). Magnetoresistance was measured for various compositions and an irreversible increase in resistivity was observed which depended linearly on the number of thermal cycles passing through the first order phase transition temperature. The irreversibly increased resistivity was recovered by holding the samples at high temperature for a long period of time of up to 3 days. A theoretical model was developed to explain the recovery in the resistance and was experimentally verified. First order magnetocrystalline anisotropy constant Kj, easy and hard axes of the single crystal Gd5Si2.7Gei j sample were determined using magnetic moment as a function of angle of rotation of the sample at room temperature. Dependence of the first order phase transition temperature on the angle of rotation of the single crystal Gd5Si2Ge2 sample was determined to be negligible. Additionally polycrystalline samples of Gd5Sii.8Ge2.2 and Gd5Sii.9Ge2.i were prepared by arc- melting and heat treatment was carried out on these samples in accordance with the literature to remove residual secondary phases in the sample at the Materials and Metallurgy Department of the Birmingham University. XRD measurements were carried out on these samples to confirm the crystal structure.

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Rickard, Jonathan James Stanley. « Advanced micro-engineered platforms for novel device technologies ». Thesis, University of Birmingham, 2018. http://etheses.bham.ac.uk//id/eprint/8303/.

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The objectives of this thesis are to explore, design, fabricate and implement the use of advanced micro-engineered platforms to be exploited as versatile, novel device technologies. An increasing number of technologies require the fabrication of conductive structures on a broad range of scales and large areas. Here, we introduce advanced yet simple electrohydrodynamic lithography for patterning conductive polymers directly on a substrate with high-fidelity. We illustrate the generality of this robust, low-cost method by structuring thin films via electric-field-induced instabilities, yielding well-defined conductive structures with a broad range of feature sizes. We show the feasibility of the polypyrrole-based structures for field-effect transistors, which might herald a route towards submicron device applications. We also demonstrate a miniaturised platform technology for timely, sensitive and rapid point-of-care diagnostics of disease-indicative biomarkers. Our micro-engineered device technology (MEDTech) is based on reproducible electrohydrodynamically fabricated platforms for surface enhanced Raman scattering enabling tuneable, high-throughput nanostructures yielding high-signal enhancements. These, integrated within a microfluidic-chip provide cost-effective, portable devices for detection of miniscule biomarker concentrations from biofluids, offering clinical tests that are simple, rapid and minimally invasive. Using MEDTech to analyse clinical blood-plasma, we deliver a prognostic tool for long-term outcomes, in the hospital or at the point-of-care.

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Wu, Dongping. « Novel concepts for advanced CMOS : Materials, process and device architecture ». Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3805.

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The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. This thesisinvestigates both unconventional materials for the gate stackand the channel and a novel notched-gate device architecture,with the emphasis on the challenging issues in processintegration.

High-κ gate dielectrics will become indispensable forCMOS technology beyond the 65-nm technology node in order toachieve a small equivalent oxide thickness (EOT) whilemaintaining a low gate leakage current. HfO₂and Al₂O₃as well as their mixtures are investigated assubstitutes for the traditionally used SiO₂in our MOS transistors. These high-κ filmsare deposited by means of atomic layer deposition (ALD) for anexcellent control of film composition, thickness, uniformityand conformality. Surface treatments prior to ALD are found tohave a crucial influence on the growth of the high-κdielectrics and the performance of the resultant transistors.Alternative gate materials such as TiN and poly-SiGe are alsostudied. The challenging issues encountered in processintegration of the TiN or poly-SiGe with the high-k are furtherelaborated. Transistors with TiN or poly-SiGe/high-k gate stackare successfully fabricated and characterized. Furthermore,proof-of-concept strained-SiGe surface-channel pMOSFETs withALD high-κ dielectrics are demonstrated. The pMOSFETs witha strained SiGe channel exhibit a higher hole mobility than theuniversal hole mobility in Si. A new procedure for extractionof carrier mobility in the presence of a high density ofinterface states found in MOSFETs with high-κ dielectricsis developed.

A notched-gate architecture aiming at reducing the parasiticcapacitance of a MOSFET is studied. The notched gate is usuallyreferred to as a local thickness increase of the gatedielectric at the feet of the gate above the source/drainextensions. Two-dimensional simulations are carried out toinvestigate the influence of the notched gate on the static anddynamic characteristics of MOSFETs. MOSFETs with optimizednotch profile exhibit a substantial enhancement in the dynamiccharacteristics with a negligible effect on the staticcharacteristics. Notched-gate MOSFETs are also experimentallyimplemented with the integration of a high-κ gatedielectric and a poly-SiGe/TiN bi-layer gate electrode.

Key words:CMOS technology, MOSFET, high-κ, gatedielectric, ALD, surface pre-treatment, metal gate, poly-SiGe,strained SiGe, surface-channel, buried-channel, notchedgate.

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Chang, Ruey-dar. « Physics and modeling of dopant diffusion for advanced device applications / ». Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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Xu, Zhenxue. « Advanced Semiconductor Device and Topology for High Power Current Source Converter ». Diss., Virginia Tech, 2003. http://hdl.handle.net/10919/11068.

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This dissertation presents the analysis and development of an innovative semiconductor device and topology for the high power current source converter (CSC). The CSC is very attractive in high power applications due to its lower output dv/dt, easy regeneration capability and implicit short-circuit protection. Traditionally, either a symmetrical gate turn-off (GTO) thyritor or an asymmetrical GTO in series with a diode is used as the power switch in the CSC. Since the GTO has a lower switching speed and requires a complicated gate driver, the symmetrical GTO based CSC usually has low dynamic response speed and low efficiency. To achieve high power rating, fast dynamic response speed and low harmonics, an advanced semiconductor device and topology are needed for the CSC. Based on symmetrical GTO and power MOSFET technologies, a symmetrical emitter turn-off (ETO) thyristor is developed that shows superior switching performance, high power rating and reverse voltage blocking capability. The on-state characteristics, forced turn-on characteristics, forced turn-off characteristics and the load-commutated characteristics are studied. Test results show that although the load-commutation loss is high, the developed symmetrical ETO is suitable for use in high power CSC due to its low conduction loss, fast switching speed and reverse voltage blocking capability. The snubberless turn-on capability is preferred for a semiconductor device in a power conversion system, and can be achieved for devices with forward biased safe operation area (FBSOA). The FBSOA of the ETO is investigated and experimentally demonstrated. The ETO device has excellent FBSOA due to the negative feedback provided by the emitter switch. However, the FBSOA for a large area ETO is poor. A new ETO concept is therefore proposed for future development in order to demonstrate the FBSOA over a large area device. To improve the turn-on performance of the large area ETO, a novel concept, named the transistor-mode turn-on, is proposed and studied. During the transistor-mode turn-on process, the ETO behaves like a transistor instead of a thyristor. Without a snubber, the transistor-mode turn-on for the ETO is hard to achieve. Through the selection of a proper gate drive and di/dt snubber, the transistor-mode turn-on can be implemented, and the turn-on performance for the ETO can be dramatically improved. To increase the power rating of the CSC without degrading the utilization of power semiconductor devices, a novel multilevel CSC, named the parallel-cell multilevel CSC, is proposed. Based on a six-switch CSC cell, the parallel-cell multilevel CSC has the advantages of high power rating, low harmonics, fast dynamic response and modularity. Therefore, it is very suitable for high power applications. The power stage design, modeling, control and switching modulation scheme for a parallel-cell multilevel CSC based static var compensator (STATCOM) are analyzed and verified through simulation.
Ph. D.

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Wong, Chun Wai. « Device technology and baseband switch for the advanced on-board processing satellites ». Thesis, University of Surrey, 1988. http://epubs.surrey.ac.uk/843454/.

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This thesis examines a new market for satellite communication serving small fixed-station business systems. This market requires transmission between a large number of smaller and cheaper earth terminals. The traffic requirements for satellite business services in Europe by the year 2000 have been reviewed. An advanced regenerative on-board processing business satellite with 13 spot-beams for the European coverage was then proposed to meet the expected traffic growth. This satellite system is designed to meet the needs of the user rather than, as traditionally, the user fitting in with the satellite. SCPC/FDMA and R-TDMA (reservation-TDMA) multiple access schemes were found to be most suitable for the proposed system serving many small users whose traffic was mixed voice, data and video. The architecture of the satellite payload has been studied and two main functional blocks, transmultiplexer and baseband switch were identified. The use of the transmultiplexer is to transform the EDM channels into TDM and the baseband switch is to provide full connectivity between all the stations so that the revolutionary idea of having a "switchboard in the sky" can be realised. The development work for the baseband switch is reported in detail in this thesis together with a comparison of different architectures for the baseband switch. A proof-of-concept model for the baseband switch was designed, built and tested. From the test results, the feasibility of implementing the baseband switch using the chosen architecture was proved. Another main area studied in this thesis was device technology. The present and future capability of bipolar, CMOS and GaAs technology has been investigated concentrating mainly on digital devices and semi-custom technology. Since the satellite is operating in an hostile environment, it has been necessary to study the effects of radiation on semiconductor devices. The outcome of these studies indicate that it is very promising to launch such advanced satellite payloads in the late 1990's.

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Tanenbaum, Laura Melanie. « Design of an intraperitoneal drug-release device for advanced ovarian cancer therapy ». Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104610.

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Thesis: Ph. D. in Medical Engineering and Medical Physics, Harvard-MIT Program in Health Sciences and Technology, 2016.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 111-121).
More than 14,000 women in the United States die from ovarian cancer each year. The standard of care is tumor-debulking surgery followed by adjuvant chemotherapy. Combination intraperitoneal (IP) and intravenous (IV) chemotherapy has been shown to lengthen survival over IV therapy alone. Large-volume infusions, drug-associated toxicity, and catheter-associated complications, however, increase morbidity and limit patient adherence, often resulting in discontinuation of IP therapy. The technical skill required for catheter implantation and IP chemotherapy administration has also limited its clinical adoption. The proposed solution is an implantable IP device capable of localized drug delivery that maintains the efficacy of the standard of care and overcomes current clinical challenges. A reservoir-based device was developed to release cisplatin at a constant rate. In vivo studies demonstrated that continuous dosing reduces tumor burden to the same extent as weekly IP injections. The implanted device induced significantly less systemic toxicity compared to IP injections, despite administration of higher cumulative doses. A subsequent in vitro study revealed that greater tumor shrinkage following continuous cisplatin exposure was achieved with smaller tumor nodules. These results support that an implanted device would be maximally effective against microscopic residual disease. In vitro results also illustrated that a human-scale device fabricated from orifice-lined silicone can be designed to release cisplatin continuously at the desired rate. The promising preclinical results in this thesis highlight the potential for this novel IP dosing regimen to improve the treatment of late-stage ovarian cancer and set the stage for development of the proposed human device.
by Laura Melanie Tanenbaum.
Ph. D. in Medical Engineering and Medical Physics

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Livres sur le sujet "Advanced-Device"

C, Hopkins Robert, et United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch., dir. Advanced underwater lift device. [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1993.

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G, Einspruch Norman, et Gildenblat Gennady Sh, dir. Advanced MOS device physics. San Diego : Academic Press, 1989.

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Tibor, Grasser, dir. Advanced device modeling and simulation. Singapore : World Scientific, 2003.

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Hanrahan, Jamie E. VMS advanced device driver techniques. Spring House, PA : Professional Press, 1988.

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Baliga, B. Jayant. Advanced High Voltage Power Device Concepts. New York, NY : Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-0269-5.

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Advanced semiconductor device physics and modeling. Boston : Artech House, 1993.

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Schenk, Andreas. Advanced physical models for silicon device simulation. Wien : Springer, 1998.

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Schenk, Andreas. Advanced Physical Models for Silicon Device Simulation. Vienna : Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6494-5.

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Semenov, Oleg, Hossein Sarbishaei et Manoj Sachdev. ESD Protection Device and Circuit Design for Advanced CMOS Technologies. Dordrecht : Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8301-3.

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Hossein, Sarbishaei, et Sachdev Manoj, dir. ESD protection device and circuit design for advanced CMOS technologies. [Dordrecht] : Springer, 2008.

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Chapitres de livres sur le sujet "Advanced-Device"

Jiang, Fengyi. « Advanced Optoelectronic Device Processing ». Dans Handbook of GaN Semiconductor Materials and Devices, 285–301. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series : Series in optics and optoelectronics : CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-8.

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Degiorgis, Giorgio, et Francesca Illuzzi. « Advanced Technologies for ULSI Device Production ». Dans High Energy Density Technologies in Materials Science, 133–38. Dordrecht : Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0499-6_11.

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Jeong, Yong Mu, Ki-Taek Lim et Seung Eun Lee. « Advanced Sensing Device for Gesture Recognition ». Dans Lecture Notes in Electrical Engineering, 63–66. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27296-7_11.

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Kolbesen, B. O. « Defect Aspects of Advanced Device Technologies ». Dans Crucial Issues in Semiconductor Materials and Processing Technologies, 3–25. Dordrecht : Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_1.

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Li, Simon, et Yue Fu. « Advanced Theory of TCAD Device Simulation ». Dans 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics, 41–80. New York, NY : Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0481-1_3.

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Cham, Kit Man, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde et Daeje Chin. « Simulation Techniques for Advanced Device Development ». Dans The Kluwer International Series in Engineering and Computer Science, 167–95. Boston, MA : Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1695-4_8.

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Kazmerski, Lawrence L. « Advanced Materials and Device Analytical Techniques ». Dans Advances in Solar Energy, 1–123. Boston, MA : Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2227-6_1.

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Sivula, Kevin. « Advanced Device Architectures and Tandem Devices ». Dans Photoelectrochemical Solar Fuel Production, 493–512. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29641-8_12.

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Das, Koushik. « Advanced Topic 1 : Adding Device Management Functions ». Dans Create an Enterprise-Level Test Automation Framework with Appium, 271–310. Berkeley, CA : Apress, 2022. http://dx.doi.org/10.1007/978-1-4842-8197-0_17.

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Nishi, Yoshitake, et Kazunori Tanaka. « Advanced CFRM Joint Device for Mover Engineering ». Dans Solid State Phenomena, 185–88. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-33-7.185.

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Actes de conférences sur le sujet "Advanced-Device"

« Advanced Device Structures ». Dans 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.284000.

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Chang, Chih-Sheng, et Akira Hokazono. « CMOS Devices - Advanced Device Structures ». Dans 2007 IEEE International Electron Devices Meeting. IEEE, 2007. http://dx.doi.org/10.1109/iedm.2007.4419091.

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Humphreys, Heather, Wayne J. Book et Grace Deetjen. « Advanced patient transfer assist device ». Dans 2018 International Symposium on Medical Robotics (ISMR). IEEE, 2018. http://dx.doi.org/10.1109/ismr.2018.8333290.

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Doppler, K., M. P. Rinne, P. Janis, C. Ribeiro et K. Hugl. « Device-to-Device Communications ; Functional Prospects for LTE-Advanced Networks ». Dans 2009 IEEE International Conference on Communications Workshops. IEEE, 2009. http://dx.doi.org/10.1109/iccw.2009.5208020.

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Thrimurthulu, V., et N. S. Murti Sarma. « Device-to-device communications in long term evaluation-advanced network ». Dans 2017 International Conference on Intelligent Computing and Control Systems (ICICCS). IEEE, 2017. http://dx.doi.org/10.1109/iccons.2017.8250577.

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Yang, MiJeong, KwangRyul Jung, SoonYong Lim et JaeWook Shin. « Development of device-to-device communication in LTE-Advanced system ». Dans 2014 IEEE International Conference on Consumer Electronics (ICCE). IEEE, 2014. http://dx.doi.org/10.1109/icce.2014.6776080.

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Shrestha, P., K. P. Cheung, J. P. Campbell, J. T. Ryan et H. Baumgart. « Fast-capacitance for advanced device characterization ». Dans 2013 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2013. http://dx.doi.org/10.1109/iirw.2013.6804147.

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Ravaioli, Umberto. « Advanced methods for silicon device modeling ». Dans 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2010. http://dx.doi.org/10.1109/smic.2010.5422994.

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Zolper, John C. « Advanced device technologies for defense systems ». Dans 2012 70th Annual Device Research Conference (DRC). IEEE, 2012. http://dx.doi.org/10.1109/drc.2012.6256988.

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Wang, Yun, Shaoyin Chen, Xiaoru Wang et Michael Shen. « Millisecond annealing for advanced device fabrications ». Dans 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6940020.

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Rapports d'organisations sur le sujet "Advanced-Device"

Beasley, M. R., A. Kapitulnik, T. H. Geballe et R. H. Hammond. Advanced Superconducting Materials and Device Concepts. Fort Belvoir, VA : Defense Technical Information Center, juillet 2001. http://dx.doi.org/10.21236/ada388285.

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Hu, Chenming, et Jeffrey Bokor. Advanced Silicon FET Physics and Device Structures. Fort Belvoir, VA : Defense Technical Information Center, décembre 1998. http://dx.doi.org/10.21236/ada372474.

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Andrew, Marilee, et Lawrence Crum. An Acoustic Hemostasis Device for Advanced Trauma Care. Fort Belvoir, VA : Defense Technical Information Center, octobre 2001. http://dx.doi.org/10.21236/ada398720.

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Stout, P., et A. J. Przekwas. An Advanced CAD Tool for Quantum Device Simulation. Fort Belvoir, VA : Defense Technical Information Center, juin 1999. http://dx.doi.org/10.21236/ada364061.

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Mekhiche, Mike, Hiz Dufera et Deb Montagna. Advanced, High Power, Next Scale, Wave Energy Conversion Device. Office of Scientific and Technical Information (OSTI), octobre 2012. http://dx.doi.org/10.2172/1097434.

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McCall, Alan, et Alex Fleming. Advanced Controls for the Multi-pod Centipod WEC device. Office of Scientific and Technical Information (OSTI), février 2016. http://dx.doi.org/10.2172/1237967.

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Schaff, William J., S. D. Offsey et Lester F. Eastman. Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials. Fort Belvoir, VA : Defense Technical Information Center, mars 1991. http://dx.doi.org/10.21236/ada233109.

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Schaff, W. J., S. D. Offsey, H. Park et L. F. Eastman. Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials. Fort Belvoir, VA : Defense Technical Information Center, juin 1989. http://dx.doi.org/10.21236/ada225695.

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Ling, Bradley A. Final Technical and Scientific Report : Advanced Control of the Azura Wave Energy Device. Office of Scientific and Technical Information (OSTI), juillet 2018. http://dx.doi.org/10.2172/1608489.

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Booske, J. H., J. Scharer, R. M. Gilgenbach et Y. Y. Lau. Instrumentation for Advanced, Slow-Waved, Microwave Vacuum Electron Device Research and Graduate Education. Fort Belvoir, VA : Defense Technical Information Center, mars 2001. http://dx.doi.org/10.21236/ada389249.

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