Littérature scientifique sur le sujet « Active semiconductors »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Sommaire
Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « Active semiconductors ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Articles de revues sur le sujet "Active semiconductors"
Wang, Xuejiao, Erjin Zhang, Huimin Shi, Yufeng Tao et Xudong Ren. « Semiconductor-based surface enhanced Raman scattering (SERS) : from active materials to performance improvement ». Analyst 147, no 7 (2022) : 1257–72. http://dx.doi.org/10.1039/d1an02165f.
Texte intégralCui, Can, Junqing Ma, Kai Chen, Xinjie Wang, Tao Sun, Qingpu Wang, Xijian Zhang et Yifei Zhang. « Active and Programmable Metasurfaces with Semiconductor Materials and Devices ». Crystals 13, no 2 (6 février 2023) : 279. http://dx.doi.org/10.3390/cryst13020279.
Texte intégralDUTA, ANCA, CRISTINA BOGATU, IOANA TISMANAR, DANA PERNIU et MARIA COVEI. « VIS-ACTIVE PHOTOCATALYTIC COMPOSITES FOR ADVANCED WASTEWATER TREATEMENT ». Journal of Engineering Sciences and Innovation 5, no 3 (15 septembre 2020) : 247–52. http://dx.doi.org/10.56958/jesi.2020.5.3.5.
Texte intégralNguyen, Thien-Phap, Cédric Renaud et Chun-Hao Huang. « Electrically Active Defects in Organic Semiconductors ». Journal of the Korean Physical Society 52, no 5 (15 mai 2008) : 1550–53. http://dx.doi.org/10.3938/jkps.52.1550.
Texte intégralFriend, R. H. « Conjugated polymers. New materials for optoelectronic devices ». Pure and Applied Chemistry 73, no 3 (1 janvier 2001) : 425–30. http://dx.doi.org/10.1351/pac200173030425.
Texte intégralSharma, Shweta, Rakshit Ameta, R. K. Malkani et Suresh Ameta. « Photocatalytic degradation of rose Bengal by semiconducting zinc sulphide used as a photocatalyst ». Journal of the Serbian Chemical Society 78, no 6 (2013) : 897–905. http://dx.doi.org/10.2298/jsc120716141s.
Texte intégralForrest, S. R. « Active optoelectronics using thin-film organic semiconductors ». IEEE Journal of Selected Topics in Quantum Electronics 6, no 6 (novembre 2000) : 1072–83. http://dx.doi.org/10.1109/2944.902156.
Texte intégralKamiya, Toshio, et Masashi Kawasaki. « ZnO-Based Semiconductors as Building Blocks for Active Devices ». MRS Bulletin 33, no 11 (novembre 2008) : 1061–66. http://dx.doi.org/10.1557/mrs2008.226.
Texte intégralFortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira et al. « Multifunctional Thin Film Zinc Oxide Semiconductors : Application to Electronic Devices ». Materials Science Forum 514-516 (mai 2006) : 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.
Texte intégralBakranova, Dina, Bekbolat Seitov et Nurlan Bakranov. « Preparation and Photocatalytic/Photoelectrochemical Investigation of 2D ZnO/CdS Nanocomposites ». ChemEngineering 6, no 6 (9 novembre 2022) : 87. http://dx.doi.org/10.3390/chemengineering6060087.
Texte intégralThèses sur le sujet "Active semiconductors"
Haasmann, Daniel Erwin. « Active Defects in 4H–SiC MOS Devices ». Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.
Texte intégralThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
Full Text
Almrabet, Meftah M. « Electrically active defects in novel Group IV semiconductors ». Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19253/.
Texte intégralDoolittle, William Alan. « Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon ». Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15710.
Texte intégralHe, Weiwei. « IGBT series connection based on cascade active voltage control with temporary clamp ». Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708196.
Texte intégralMaës, Clément. « Plasmonique active pour l’infrarouge sur semi-conducteur fortement dopé ». Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS033.
Texte intégralThe context of my thesis deals with infrared (IR) multispectral imaging and in particular with plasmonics, a field of electromagnetic optics whose the aim is to study and exploit surface waves existing at the interface between a metal and a dielectric. We seek to miniaturize optical functions thanks to nanotechnologies and more precisely to perform IR spectral filtering at the detection pixel level by integrating a nano-resonator. Usually we use dielectrics and metals, but the integration is complex. I am exploring the potential offered by heavily doped semiconductors to replace metals, which could allow better integration into technological processes for fabricate a photodetector or emitter. I use III-V semiconductors, compatible with the epitaxial growth of type 2 superlattice (T2SL) of long wave infrared photodetectors (LWIR). Furthermore, working with a heavily doped semiconductor offers the possibility of modifying the resonance frequency by adjusting the density of free carriers by the action of a potential difference.I study architectures of "GMR" components (Guided-Mode Resonance), usually formed by a waveguide in dielectric, where occurs the resonance, and a grating in dielectric or metal allowing the coupling between the incident or transmitted wave and the guided mode thanks to the ±1 orders diffracted by the grating in the thin layer. The current trend is to integrate these components directly at the level of the detection pixel but at the cost of numerous fabrication steps. I am studying the possibility of using exclusively semiconductors to simplify the fabrication process and allow monolithic integration of the filter into the detector. The waveguide consists of an intrinsic semiconductor and the grating of heavily doped semiconductor. The spectral range of interest is in the far infrared (8 μm - 14 μm).First, theoretical and experimental demonstrations of an all-semiconductor nano-structured spectral filter for infrared based on guided-mode resonance were carried out. I dimensioned and then fabricated a sample where the first step consists in depositing by epitaxy a layer of GaSb and a layer of highly doped InAsSb on a GaAs substrate before a photolithography step to define the mask of the etching reactive ionic etching in order to obtain the diffraction grating. An experimental work then made it possible to characterize the component (measurement under normal incidence, angular study, measurement at low temperature) with in particular the realization of an angular characterization setup.In parallel, I studied an appropriate stack of doped materials allowing, by applying an electrical voltage, to move the free electrons from doping in the grating and the guide, which then locally modifies the refractive index and therefore directly the conditions for guiding the light by phase variation. Different approaches have been presented in an attempt to adjust the resonance wavelength of the GMR spectral filter: accumulation and depletion of charges in the diffraction grating, insertion of a PN junction in the waveguide, ...Finally, a first brick for the integration of a T2SL in an optical nano-resonator to make an all-semiconductor nano-structured photodetector was studied. I proposed the theoretical design of several nano-resonators integrating a T2SL type photodetector (InAs/GaSb). I designed three architectures with distinct spectral properties, which differ in particular in the thickness of the T2SL layer
Hill, Bradford K. Greene Michael E. « A linear CMOS tunable active resistor ». Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SPRING/Electrical_and_Computer_Engineering/Thesis/Hill_Bradford_35.pdf.
Texte intégralWang, Lei [Verfasser]. « Small molecule organic semiconductors as efficient visible light-active photocatalysts / Lei Wang ». Mainz : Universitätsbibliothek der Johannes Gutenberg-Universität Mainz, 2017. http://d-nb.info/1225685842/34.
Texte intégralToffanin, Stefano. « Multifunctional organic semiconductors as active materials for electronic and opto-electronic devices ». Doctoral thesis, Università degli studi di Padova, 2009. http://hdl.handle.net/11577/3426094.
Texte intégralFin dalla scoperta dell’effetto fotoelettrico nell’antracene, i composti organici sono stati studiati come materiali multifunzionali data la loro capacità di mostrare una varietà di proprietà differenti, come il trasporto di carica, emissione/assorbimento di luce, fotoconduttività, elettroluminescenza e superconduttività. Il lavoro presentato in questa tesi di dottorato si prefigge lo scopo di studiare differenti classi di materiali organici ? coniugati che presentino le proprietà funzionali adatte per la realizzazione di dispositivi optoelettronici. In particolare viene prestata particolare attenzione allo studio di due specifiche proprietà che sono profondamente connesse con l’organizzazione molecolare nei dispositivi multifunzionali con dimensioni nanometriche: il trasporto di carica e l’emissione di luce. Nei film sottili, univocamente considerati interessanti dal punto di vista tecnologico, l’organizzazione molecolare è fortemente dipendente dai processi di deposizione e dalla natura del substrato. Per aumentare le prestazioni dei dispositivi basati sui film sottili risulta fondamentale comprendere le strutture supermolecolari e le caratteristiche morfologiche su scala micro- e nanometrica che possono favorire il trasporto di carica e/o i processi di trasferimento di energia. Si dimostra che in generale gli oligotiofeni lineari depositati in film sottile possano organizzarsi vantaggiosamente in modo da garantire l’opportuna sovrapposizione tra gli orbitali molecolari che permette un efficiente trasporto di carica. Introducendo una nuova classe di oligotiofeni ramificati, denominati spider-like, ci proponiamo di studiare come una complessa architettura 3D possa modificare le proprietà di emissione, di organizzazione supermolecolare e di trasporto. Si procede quindi ad indagare la possibilità di aumentare l’efficienza di emissione di luce di sistemi organici molecolari mediante l’introduzione di un nuovo sistema host-guest con proprietà di lasing ottenuto sublimando un derivato diarilfluorenico (T3, donore) con una noto colorante emettitore nel rosso (DCM, accettare). In questa soluzione solida binaria, si verifica un efficiente trasferimento di energia alla Förster tra la matrice di T3 e le molecole di colorante quando la concentrazione di colorante viene opportunamente ottimizzata. Inoltre, la soglia di emissione spontanea amplificata del campione avente le molecole di DCM disperse al 2% in peso nel T3 risulta quasi un ordine di grandezza più bassa rispetto a quella del campione modello misurato nelle stesse condizioni sperimentali avente la stessa concentrazione in peso si molecole di DCM disperse in una matrice di Alq3. La possibilità di combinare diverse proprietà funzionali in un unico dispositivo risulta di notevole interesse per un ulteriore sviluppo dell’elettronica organica nei componenti integrati e nei circuiti. Si è dimostrato che i transistor organici ad emissione di luce sono capaci di combinare in un singolo dispositivo le proprietà di switch dei transistor ad effetto di campo con la capacità di generare luce. Quando i materiali organici vengono utilizzati come strati attivi nei dispositivi, le interfacce formate dai diversi materiali assumono un ruolo di primaria importanza. La comprensione dei processi fisici che avvengono ad ogni interfaccia è cruciale per disegnare nuovi materiali per dispositivi o per aumentare le prestazioni quelli già esistenti. In questo lavoro di tesi viene presentato un nuovo approccio per realizzare transistor ambipolari ad emissione di luce. Nell’eterogiunzione che viene proposta il primo e il terzo strato sono dedicati al trasporto di portatori di carica (elettroni e lacune) per effetto di campo mentre il secondo strato è formato da una soluzione solida host-guest che mostra efficiente emissione di luce ed emissione spontanea di luce se pompata otticamente. La specificità dell’approccio che presentiamo è che le regioni di trasporto di carica sono fisicamente separate da quella in cui avviene la formazione dell’eccitone. In questo modo viene ridotta completamente l’interazione tra l’eccitone e il portatore di carica. Dopo aver ottimizzato il trasporto di carica e le proprietà di emissione di luce, si è potuto realizzare un dispositivo basato sull’eterogiunzione a tre strati che presenta valori di mobilità per gli elettroni e le lacune bilanciati (~10-1-10-2 cm2/Vs), alta densità di portatori di carica in corrispondenza del massimo di elettroluminescenza (~ 1 KA/cm2) e intensa emissione di luce.
Palakodety, Atmaram Mohanty Saraju. « CMOS active pixel sensors for digital cameras current state-of-the-art / ». [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3631.
Texte intégralShen, Chao. « Study of CMOS active pixel image sensor on SOI/SOS substrate / ». View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20SHEN.
Texte intégralIncludes bibliographical references (leaves 67-69). Also available in electronic version. Access restricted to campus users.
Livres sur le sujet "Active semiconductors"
Mitchell, W. S. E. Compendium of active devices. London : Institution of Electrical and Electronic Incorporated Engineers, 1987.
Trouver le texte intégralYuan, Fei. CMOS active inductors and transformers : Principle, implementation, and applications. New York : Springer, 2008.
Trouver le texte intégralFistulʹ, V. I. Amfoternye primesi v poluprovodnikakh. Moskva : "Metallurgii͡a︡", 1992.
Trouver le texte intégralWorkshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor-Insulator Systems (2nd 1989 Microelectronics Center of North Carolina). Proceedings from the Second Workshop on Radiation-Induced and/or Process-Related Electrically Active Defects in Semiconductor Systems. Sous la direction de Reisman A, Microelectronics Center of North Carolina., North Carolina State University et University of North Carolina at Charlotte. Research Triangle Park, NC : MCNC, 1989.
Trouver le texte intégralW, E. Heraeus Seminar (157th 1996 Bad Honnef Germany). Self-organization in activator-inhibitor-systems : Semiconductors, gas-discharge and chemical active media : contributions to the 157th WE-Heraeus-Seminar, March 4-6, 1996. Berlin : Wissenschaft und technik Verlag, 1996.
Trouver le texte intégralInc, Siborg Systems, dir. Semiconductor devices explained : Using active simulation. Chichester [England] : J. Wiley, 1999.
Trouver le texte intégralGorelikov, Ivan. Hybrid plymer-semiconductor materials optically active in Vis-NIR region. Ottawa : National Library of Canada, 2003.
Trouver le texte intégralIntegrated Photonics Research Topical Meeting. (1991 Monterey, Calif.). Integrated photonics research : Summaries of papers presented at the Integrated Photonics Research Topical Meeting, April 9-11, 1991, Monterey, California ; including Workshop on Active and Passive Fiber Components. Washington, D.C : Optical Society of America, 1991.
Trouver le texte intégralOptically Active Charge Traps And Chemical Defects In Semiconducting. Springer International Publishing AG, 2013.
Trouver le texte intégralRhodes, R. G., et Heinz K. Henisch. Imperfections and Active Centres in Semiconductors : International Series of Monographs on Semiconductors, Vol. 6. Elsevier Science & Technology Books, 2014.
Trouver le texte intégralChapitres de livres sur le sujet "Active semiconductors"
Candal, Roberto, et Azael Martínez-de la Cruz. « New Visible-Light Active Semiconductors ». Dans Photocatalytic Semiconductors, 41–67. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-10999-2_2.
Texte intégralStroyuk, Oleksandr. « Synthesis of Nanocrystalline Photo-Active Semiconductors ». Dans Lecture Notes in Chemistry, 241–318. Cham : Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-68879-4_5.
Texte intégralNishanthi, S. T., Battula Venugopala Rao et Kamalakannan Kailasam. « Metal-Free Organic Semiconductors for Visible-Light-Active Photocatalytic Water Splitting ». Dans Visible Light-Active Photocatalysis, 329–63. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527808175.ch12.
Texte intégralSpassova, Emily M. « Semiconductor on the Basis of Active ZnO ». Dans Proceedings of the 17th International Conference on the Physics of Semiconductors, 951–53. New York, NY : Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_212.
Texte intégralStrijbos, R. C., A. V. Muravjov, J. H. Blok, J. N. Hovenier, J. G. S. Lok, S. G. Pavlov, R. N. Schouten, V. N. Shastin et W. Th Wenckebach. « Active Mode Locking of a P-GE Light-Heavy Hole Band Laser by Electrically Modulating its Gain : Theory and Experiment ». Dans Hot Carriers in Semiconductors, 631–33. Boston, MA : Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_145.
Texte intégralRink, Klaus, et Wolfgang Jöckel. « New Concepts of High Current Sensing by Using Active Semiconductors for the Energy Management in Automotive Applications ». Dans Advanced Microsystems for Automotive Applications 2012, 27–35. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-29673-4_3.
Texte intégralPowell, Richard F. « Semiconductor Diodes ». Dans Testing Active and Passive Electronic Components, 83–101. Boca Raton : Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-7.
Texte intégralBezoušek, P. « Modelling of Active Semiconductor Circuit Elements ». Dans Microwave Integrated Circuits, 136–72. Dordrecht : Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1224-6_3.
Texte intégralBen Moshe, Assaf, et Gil Markovich. « Optically Active and Chiral Semiconductor Nanocrystals ». Dans Chiral Nanomaterials : Preparation, Properties and Applications, 85–98. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527682782.ch4.
Texte intégralRastelli, Armando, Suwit Kiravittaya et Oliver G. Schmidt. « Growth and control of optically active quantum dots ». Dans Single Semiconductor Quantum Dots, 31–69. Berlin, Heidelberg : Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-87446-1_2.
Texte intégralActes de conférences sur le sujet "Active semiconductors"
Fischer, Anna, Wai Kit Ng, Jakub Dranczewski, Dhruv Saxena, T. V. Raziman, Tobias Farchy, Jonathan Peters et al. « Image sensitive spectral response of semiconductor random network lasers ». Dans Active Photonic Platforms (APP) 2024, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou, 6. SPIE, 2024. http://dx.doi.org/10.1117/12.3028100.
Texte intégralHosono, Hideo. « Amorphous Oxide Semiconductor TFTs Toward Memory Application ». Dans 2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 4–5. IEEE, 2024. http://dx.doi.org/10.23919/am-fpd61635.2024.10615885.
Texte intégralKazakov, Dmitry, Theodore P. Letsou, Marco Piccardo, Lorenzo Columbo, Massimo Brambilla, Franco Prati, Pawan Ratra et al. « Active nonlinear mid-infrared photonics ». Dans CLEO : Science and Innovations, SM4N.5. Washington, D.C. : Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm4n.5.
Texte intégralTaghinejad, Hossein, et Ali Adibi. « Ultra-miniaturized lateral heterostructures in 2D semiconductors ». Dans Active Photonic Platforms XIII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2021. http://dx.doi.org/10.1117/12.2593849.
Texte intégralMenon, Vinod M. « Control of light-matter interaction in 2D semiconductors ». Dans Active Photonic Platforms XIII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2021. http://dx.doi.org/10.1117/12.2594379.
Texte intégralJariwala, Deep. « Strong light-matter coupling in hetero-structures of atomically thin semiconductors ». Dans Active Photonic Platforms XII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2020. http://dx.doi.org/10.1117/12.2567587.
Texte intégralVasa, P., W. Wang, R. Pomraenke, M. Maiuri, C. Manzoni, G. Cerullo et C. Lienau. « Active plasmonics : merging metals with semiconductors ». Dans SPIE OPTO, sous la direction de Markus Betz, Abdulhakem Y. Elezzabi, Jin-Joo Song et Kong-Thon Tsen. SPIE, 2014. http://dx.doi.org/10.1117/12.2038091.
Texte intégralKim, Kwanghyun, Joshua Perkins, Avik Mandal et Behrad Gholipour. « Volatile broadband switchable thermo-optic properties of phase change chalcogenide semiconductors ». Dans Active Photonic Platforms (APP) 2023, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2023. http://dx.doi.org/10.1117/12.2677104.
Texte intégralFoerste, Jonathan, Victor Funk, Johannes Scherzer, Shen Zhao, Alexander Hoegele et Samarth Vadia. « Two-dimensional semiconductors for chiral directionality and electro-optic modulation in photonic systems ». Dans Active Photonic Platforms (APP) 2023, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2023. http://dx.doi.org/10.1117/12.2677335.
Texte intégralCojocaru, Crina, Laura Rodríguez-Suné, Michael Scalora, Neset Akozbek, Maria Atonietta Vincenti, Domenico de Ceglia et Jose Trull. « Harmonic generation in the opaque region of semiconductors : the role of the surface and magnetic nonlinearities ». Dans Active Photonic Platforms XII, sous la direction de Ganapathi S. Subramania et Stavroula Foteinopoulou. SPIE, 2020. http://dx.doi.org/10.1117/12.2567233.
Texte intégralRapports d'organisations sur le sujet "Active semiconductors"
Nurmikko, Arto V. Optically Active 3-Dimensional Semiconductor Quantum Dot Assemblies in Heterogeneous Nanoscale Hosts. Office of Scientific and Technical Information (OSTI), mai 2017. http://dx.doi.org/10.2172/1355658.
Texte intégralWilliam L. Dunn et Douglas McGregor. High-Efficiency Thin-Film-Coated Semiconductor Neutron Detectors for Active Dosimetry Monitors. Office of Scientific and Technical Information (OSTI), décembre 2009. http://dx.doi.org/10.2172/970981.
Texte intégralMetzger, Wyatt K. Photovoltaic Cells Employing Group II-VI Compound Semiconductor Active Layers : Cooperative Research and Development Final Report, CRADA Number CRD-09-325. Office of Scientific and Technical Information (OSTI), septembre 2018. http://dx.doi.org/10.2172/1475129.
Texte intégral