Bibliographies thématiques / 32 NM TECHNOLOGY NODE

Littérature scientifique sur le sujet « 32 NM TECHNOLOGY NODE »

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Publié le 11 septembre 2023

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Articles de revues sur le sujet "32 NM TECHNOLOGY NODE"

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Allgair, John, Benjamin Bunday, Aaron Cordes, Pete Lipscomb, Milt Godwin, Victor Vartanian, Michael Bishop, Doron Arazi et Kye-Weon Kim. « Metrology Requirements for the 32 nm Technology Node and Beyond ». ECS Transactions 18, no 1 (18 décembre 2019) : 151–60. http://dx.doi.org/10.1149/1.3096443.

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Huang, Zhengfeng, Di Cao, Jianguo Cui, Yingchun Lu, Yiming Ouyang, Haochen Qi, Qi Xu, Huaguo Liang et Tianming Ni. « Design of Multiple Node Upset Tolerant Latch in 32 nm CMOS Technology ». Journal of Computer-Aided Design & ; Computer Graphics 33, no 3 (1 mars 2021) : 346–55. http://dx.doi.org/10.3724/sp.j.1089.2021.18385.

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Huang, Zhengfeng, Yang Guo, Shangjie Pan, Yingchun Lu, Huaguo Liang, Haochen Qi, Yiming Ouyang, Tianming Ni et Qi Xu. « Tri-Node Upsets Self-Recovery Latch Design in 32 nm CMOS Technology ». Journal of Computer-Aided Design & ; Computer Graphics 32, no 12 (1 décembre 2020) : 2013–20. http://dx.doi.org/10.3724/sp.j.1089.2020.18160.

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Ono, Kazuo, Kenzo Kurotsuchi, Yoshihisa Fujisaki, Riichiro Takemura, Motoyasu Terao et Norikatsu Takaura. « Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond ». Japanese Journal of Applied Physics 48, no 4 (20 avril 2009) : 04C160. http://dx.doi.org/10.1143/jjap.48.04c160.

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Orlowski, Marius, et Andreas Wild. « Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node ? » ECS Transactions 3, no 6 (21 décembre 2019) : 3–17. http://dx.doi.org/10.1149/1.2357050.

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Park, Dae-Gyu, Mike Chudzik et Haizhou Yin. « Challenges in FEOL Logic Device Integration for 32 nm Technology Node and Beyond ». ECS Transactions 11, no 6 (19 décembre 2019) : 371–77. http://dx.doi.org/10.1149/1.2778394.

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Hussain, Inamul, et Saurabh Chaudhury. « CNFET Based Low Power Full Adder Circuit for VLSI Applications ». Nanoscience & ; Nanotechnology-Asia 10, no 3 (17 juin 2020) : 286–91. http://dx.doi.org/10.2174/2210681209666190220122553.

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Background: The Adder is one of the most prominent building blocks in VLSI circuits and systems. Performance of such systems depends mostly on the performance of the adder cell. The scaling down of devices has been the driving force in technological advances. However, in CMOS technology performance of adder cell decreases as technology node scaled down to deep micron regime. Objective: With the growth of research, new device model has been proposed based on carbon nano tube field effect transistor (CNFET). Therefore, there is a need of full adder cell, which performs sufficiently well in CNFET as well as different CMOS technology nodes. Method: A new low power full adder cell has been proposed with a hybrid XOR/XNOR module by using CNFET, which is also compatible for the CMOS technology nodes. The performance of the adder cell is validated with HSPICE simulation in terms of power, delay and power delay product. It is observed that the proposed adder cell performs better than the CMOS, CPL, TGA, 10 T, 14 T, 24 T, HSPC and Hybrid_FA adder cells. The CNFET full adder is designed in 32 nm CNFET model and to appraise its compatibility with Bulk-Si CMOS technology, 90 nm and 32 nm CMOS technology node is used. Conclusion: The proposed adder is very much suitable for both CMOS and CNFET technology based circuits and systems. To validate the result, simulation has been carried out with Synopsis tool. This full adder will definitely dominate other full adder cells at various technology nodes for VLSI applications.
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Kumar, Amresh, et Aminul Islam. « Multi-gate device and summing-circuit co-design robustness studies @ 32-nm technology node ». Microsystem Technologies 23, no 9 (6 juillet 2016) : 4099–109. http://dx.doi.org/10.1007/s00542-016-3055-4.

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Andrieu, F., O. Weber, T. Ernst, O. Faynot et S. Deleonibus. « Strain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology node ». Microelectronic Engineering 84, no 9-10 (septembre 2007) : 2047–53. http://dx.doi.org/10.1016/j.mee.2007.04.132.

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Collaert, N., R. Rooyackers, A. Hikavyy, A. Dixit, F. Leys, P. Verheyen, R. Loo, M. Jurczak et S. Biesemans. « Multi-gate devices for the 32 nm technology node and beyond : Challenges for Selective Epitaxial Growth ». Thin Solid Films 517, no 1 (novembre 2008) : 101–4. http://dx.doi.org/10.1016/j.tsf.2008.08.031.

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Thèses sur le sujet "32 NM TECHNOLOGY NODE"

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Bansal, Anil Kumar. « CMOS scaling considerations in sub 10-nm node multiple-gate FETS ». Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8046.

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Deng, Jie. « Device modeling and circuit performance evaluation for nanoscale devices : silicon technology beyond 45 nm node and carbon nanotube field effect transistors / ». May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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YADAV, PUNEET. « DESIGN AND ANALYSIS OF A LOW POWER AND HIGH PERFORMANCE 10T SRAM CELL AT 32 NM TECHNOLOGY NODE ». Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19835.

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Memory is known to be one of the most crucial parts of any electronic system. However, a class of memory called the cache memory is even more crucial among the type of memories since it is the one working closely in synchronization with the central processing unit. There are millions of SRAM cells inside cache memory. SRAM cells must therefore possess a few essential attributes for cache memory to be reliable, including low dynamic and static power consumption, high data stability, and low read latency. A comprehensive review of the design and analysis of SRAM cells are performed, focusing on the fundamental building block, the SRAM cell, and its critical performance parameters. The aim is to provide a concise overview of the key concepts and challenges involved in SRAM cell design, highlighting recent advancements and future directions. The review begins with an introduction to SRAM and its significance in various applications. It explores the basic structure and operation of an SRAM cell, emphasizing the importance of stability, read and write capabilities, and power consumption. The different SRAM cell topologies are discussed, along with their advantages and trade-offs. The critical design considerations of SRAM cells, including noise immunity, process variations, and leakage current. Various techniques for improving the stability of SRAM cells, such as the use of feedback and assist circuits, are examined. Moreover, the impact of scaling technologies, such as process technology nodes and transistor scaling, on SRAM cell performance is explored. Additionally, the analysis of SRAM cell performance metrics, including read and write access times, write margin, stability, and power dissipation have been studied. The influence of key parameters, such as supply voltage, transistor sizing, and load capacitance, on these metrics is discussed. Furthermore, the impact of process variations on yield and reliability is addressed, along with reliability-enhancement techniques. To successfully incorporate these qualities, a comparative analysis of different 10T and 11T SRAM cells has been performed. The performance of the conventional TG10T and 11T SRAM models are compared to the 10T SRAM to showcase enhancements obtained. TG10T SRAM cell deploys two transmission gates instead of two NMOS access vi transistors to strengthen writing ability. It also employs two additional buffer transistors so that read stability can be enhanced. The TG10T SRAM cell is proven to be more enhanced in almost every aspect but it consumes more power. The read SNM and write SNM are found to be the largest in the TG10T SRAM cell. The power dissipated by the TG10T cell (i.e., 233.69nW) is approximately two times as compared to the 10T SRAM cell (i.e., 108.65nW) and 11T SRAM cell (i.e., 88.491nW). The analysis also shows that both read and write delay is minimal in TG10T SRAM cells. The read delay is 343.3 psec and the write delay is 494 psec respectively. A 10T SRAM cell has been proposed and comparison between of different existing 10T and 11T SRAM cells has been performed. The power consumption and read-write behaviors of all the SRAM cells are studied. The power consumed by the TG10T cell (i.e., 233.69nW) is approximately two times in contrast to the 10T SRAM cell (i.e., 108.65nW) and five times when collated to the proposed 10T SRAM cell (i.e., 44.794nW). The analysis associated depicts that the read and write delay is minimum in the proposed 10T SRAM (i.e., 97.7psec & 154.3psec) respectively. All simulations are carried out using LTSPICE software operating at 0.5 Volt in 32 nm CMOS process technology. The proposed transmission gate based 10T SRAM cell consumes minimum power and has better overall read stability as compared to the other designs. The review concludes by highlighting emerging trends and challenges in SRAM cell design, including the exploration of novel device architectures, non-volatile SRAM, and low power designs for energy-efficient computing systems. It emphasizes the need for continued research and innovation to address the increasing demands for higher density, lower power consumption, and improved reliability in future SRAM cell designs. A comprehensive overview of the design and analysis of SRAM cells serves as a valuable resource for researchers, engineers, and students working in the field of digital integrated circuit design, offering insights into the current state of SRAM cell technology and potential future directions.
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CHANG, JIA MIN, et 張家民. « PROCESS WINDOW AND OPC RULES FOR 32 NM NODE WITH 1.3 NA IMMERSION LITHOGRAPHY SYSTEM ». Thesis, 2008. http://ndltd.ncl.edu.tw/handle/68565777250786976346.

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碩士
南台科技大學
電子工程系
96
This thesis discusses the feasibility of 32 nm node with 1.3 NA and 193 nm light source immersion lithography system and tries to extend the lifetime of the system. We present the process window and some typical OPC rules by numerical simulation with open software SPLAT. Without any resolution enhancement technologies (RETs), the 10% variation process window is 44 nm × 4.09% and the 15% variation process window is 54 nm × 6.80%. We find that OPC rules for 32 nm node with the system is extremely tedious and suggest that the minimum spacing between two parallel lines is 74 nm. Therefore, higher NA system will be helpful to achieve real 32 nm half pitch.
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Chen, Hsiu Pin, et 陳修斌. « Device-level Doping Profile Analysis for Saddle-fin Device in 30 nm DRAM Technology Node ». Thesis, 2016. http://ndltd.ncl.edu.tw/handle/u452zb.

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Shi-HaoChen et 陳仕豪. « Performance Optimization of Gate-All-Around MOSFETs by Inner Spacers at 5 nm Technology Node ». Thesis, 2018. http://ndltd.ncl.edu.tw/handle/jg54wt.

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碩士
國立成功大學
奈米積體電路工程碩士學位學程
106
The evolution of semiconductor technology has been progressed since Moore’s Law proposed in 1964. Dimension scaling is always the challenge for each technology node to reduce producing cost. With the continuous scaling of devices, short-channel effects are more and more severe in limiting the performance enhancement. Multi-gate struc-tures, which enhance the gate control on short-channel effects and optimize the electri-cal characteristics, can overcome the limitation; FinFET is generally applied for ad-vanced semiconductor fabrications. However, for sub-5 nm technology node, FinFETs can not offer the enough gate control, resulting in worse short-channel effects. On the other hand, GAA MOSFETs with the superior gate control of channel electrostatic are considered as a possible extension for the following technology nodes. Nevertheless, they increase the undesirable parasitic capacitances. In this thesis, an analytical model is used to calculate the parasitic capacitances caused by GAA MOSFETs. Next, the optimization by inner spacer is presented to re-duce the additional parasitic capacitances. Such methodology helps us to ensure that the improvement is effective and feasible. Then we use Synopsys TCAD to do the process simulations. GAA MOSFETs are processed with SiGe epitaxy. Electrical characteristic comparison for the devices with and without inner spacers is discussed. 5nm technology node in ITRS roadmap is the specification we adopt in this thesis. Different spacer lengths are the main topic; the longer spacers extend the effective channel length and improve short-channel effects. Furthermore, the future design, a new integration scheme featuring bulk Si-base and cost-effective fabrication, is proposed. To overcome the drawback of GAA MOSFETs compared to FinFET: the increase of parasitic capacitances, inner spacers are adopted in fabrication. The proposed process is feasible and promising in the future based on our preliminary data.
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Livres sur le sujet "32 NM TECHNOLOGY NODE"

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Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6.

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Wang, Guilei. Investigation on Sige Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. Springer Singapore Pte. Limited, 2020.

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Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer, 2019.

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Chapitres de livres sur le sujet "32 NM TECHNOLOGY NODE"

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Ahlawat, Siddhant, Siddharth, Bhawna Rawat et Poornima Mittal. « A Comparative Performance Analysis of Varied 10T SRAM Cell Topologies at 32 nm Technology Node ». Dans Modeling, Simulation and Optimization, 63–75. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0836-1_5.

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Rawat, Bhawna, et Poornima Mittal. « Investigating the Impact of Schmitt Trigger on SRAM Cells at 32 nm Technology Node for Low Voltage Applications ». Dans Lecture Notes in Electrical Engineering, 53–63. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_5.

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Tomita, Hiroshi, Yuji Yamada, Hidenobu Nagashima, Norio Ishikawa et Yumiko Taniguchi. « New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node ». Dans Solid State Phenomena, 185–88. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.185.

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Jeffry Louis, V., et Jai Gopal Pandey. « A Novel Design of SRAM Using Memristors at 45 nm Technology ». Dans Communications in Computer and Information Science, 579–89. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_48.

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Saxena, Anmol, Vyom Saraf et Rutu Parekh. « ASIC Implementation of a 16-Bit Brent–Kung Adder at 45 nm Technology Node ». Dans Sustainable Technology and Advanced Computing in Electrical Engineering, 83–105. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4364-5_8.

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Gupta, Vaibhav, Atharv Kapre, Shashank Kumar Dubey et Aminul Islam. « Implementation and Analysis of CNFET-Based PCRAM Cell Using 32 nm Technology ». Dans Lecture Notes in Electrical Engineering, 251–63. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3691-5_21.

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Ayush, Poornima Mittal et Rajesh Rohilla. « Comparative Analysis of Current Sense Amplifier Architectures for SRAM at 45 nm Technology Node ». Dans Advances in Data-Driven Computing and Intelligent Systems, 633–40. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3250-4_48.

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Wang, Guilei. « Strained Silicon Technology ». Dans Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond, 9–21. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6_2.

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Pittala, Suresh Kumar, et A. Jhansi Rani. « Complementary Energy Path Adiabatic Logic-Based Adder Design in 32 Nm FinFET Technology ». Dans Advances in Communication, Devices and Networking, 87–95. Singapore : Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_11.

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Ahmed Khan, Imran, Md Rashid Mahmood et J. P. Keshari. « Analytical Comparison of Power Efficient and High Performance Adders at 32 nm Technology ». Dans Lecture Notes in Networks and Systems, 659–70. Singapore : Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3172-9_62.

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Actes de conférences sur le sujet "32 NM TECHNOLOGY NODE"

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Deschacht, D. « Interconnect design for a 32 nm node technology ». Dans Technology of Integrated Systems in Nanoscale Era (DTIS). IEEE, 2011. http://dx.doi.org/10.1109/dtis.2011.5941410.

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Burghartz, J., M. Irmscher, F. Letzkus, J. Kretz et D. Resnick. « Lithography for the 32-nm Node and Beyond ». Dans 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311125.

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Shahidi, Ghavam G. « Design-technology interaction for post-32 nm node CMOS technologies ». Dans 2010 IEEE Symposium on VLSI Technology. IEEE, 2010. http://dx.doi.org/10.1109/vlsit.2010.5556204.

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Adachi, Takashi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri et Naoya Hayashi. « 45-32-nm node photomask technology with water immersion lithography ». Dans 26th Annual BACUS Symposium on Photomask Technology, sous la direction de Patrick M. Martin et Robert J. Naber. SPIE, 2006. http://dx.doi.org/10.1117/12.689740.

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Gambino, Jeff, Fen Chen et John He. « Copper interconnect technology for the 32 nm node and beyond ». Dans 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280904.

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Ward, Brian S., Lena Zavylova, Peter de Bisschop et Jeroen van de Kerkhove. « Empirical study of OPC metrology requirements for 32-nm node logic ». Dans Photomask Technology, sous la direction de Hiroichi Kawahira et Larry S. Zurbrick. SPIE, 2008. http://dx.doi.org/10.1117/12.801458.

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Lu, C. L., L. Y. Hsia, T. H. Cheng, S. C. Chang, W. C. Wang, H. J. Lee et Y. C. Ku. « Improvement of etching selectivity for 32-nm node mask making ». Dans Photomask and Next-Generation Lithography Mask Technology XIV, sous la direction de Hidehiro Watanabe. SPIE, 2007. http://dx.doi.org/10.1117/12.728928.

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Monahan, K. M. « Enabling DFM and APC strategies at the 32 nm technology node ». Dans ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005. IEEE, 2005. http://dx.doi.org/10.1109/issm.2005.1513388.

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Iessi, Umberto, Sara Loi, Antonio Salerno, Pierluigi Rigolli, Elio De Chiara, Catia Turco, Roberto Colombo, Marco Polli et Antonio Mani. « Double patterning overlay and CD budget for 32 nm technology node ». Dans SPIE Advanced Lithography. SPIE, 2008. http://dx.doi.org/10.1117/12.772795.

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Fukutome, H., K. Kawamura, H. Ohta, K. Hosaka, T. Sakoda, Y. Morisaki et Y. Momiyama. « Cost-effective Ni-melt-FUSI boosting 32-nm node LSTP transistors ». Dans 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588598.

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