Littérature scientifique sur le sujet « 2D material technology »
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Articles de revues sur le sujet "2D material technology"
Yang, Hongyan, Yunzheng Wang, Zian Cheak Tiu, Sin Jin Tan, Libo Yuan et Han Zhang. « All-Optical Modulation Technology Based on 2D Layered Materials ». Micromachines 13, no 1 (7 janvier 2022) : 92. http://dx.doi.org/10.3390/mi13010092.
Texte intégralWu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang et al. « The fabrication and physical properties of two-dimensional van der Waals heterostructures ». Acta Physica Sinica 71, no 4 (2022) : 048502. http://dx.doi.org/10.7498/aps.71.20212033.
Texte intégralMasurkar, Nirul, Sundeep Varma et Leela Mohana Reddy Arava. « Supported and Suspended 2D Material-Based FET Biosensors ». Electrochem 1, no 3 (23 juillet 2020) : 260–77. http://dx.doi.org/10.3390/electrochem1030017.
Texte intégralMaiti, Rishi, Rohit A. Hemnani, Rubab Amin, Zhizhen Ma, Mohammad H. Tahersima, Tom A. Empante, Hamed Dalir, Ritesh Agarwal, Ludwig Bartels et Volker J. Sorger. « A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm ». Nanophotonics 8, no 3 (21 février 2019) : 435–41. http://dx.doi.org/10.1515/nanoph-2018-0197.
Texte intégralWu, Yuanpeng, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis et Zetian Mi. « Perspectives and recent advances of two-dimensional III-nitrides : Material synthesis and emerging device applications ». Applied Physics Letters 122, no 16 (17 avril 2023) : 160501. http://dx.doi.org/10.1063/5.0145931.
Texte intégralMurali, G., Jishu Rawal, Jeevan Kumar Reddy Modigunta, Young Ho Park, Jong-Hoon Lee, Seul-Yi Lee, Soo-Jin Park et Insik In. « A review on MXenes : new-generation 2D materials for supercapacitors ». Sustainable Energy & ; Fuels 5, no 22 (2021) : 5672–93. http://dx.doi.org/10.1039/d1se00918d.
Texte intégralLate, Dattatray J., et Claudia Wiemer. « Advances in low dimensional and 2D materials ». AIP Advances 12, no 11 (1 novembre 2022) : 110401. http://dx.doi.org/10.1063/5.0129120.
Texte intégralShang, Peng, Huaiqing Zhang, Xiaopeng Liu, Zhuang Yang, Bingfeng Liu et Teng Liu. « Cutting-Force Modeling Study on Vibration-Assisted Micro-Milling of Bone Materials ». Micromachines 14, no 7 (14 juillet 2023) : 1422. http://dx.doi.org/10.3390/mi14071422.
Texte intégralChen, Cheng, Xiao Hui Wang, Zhi Qiang Dong, Gong Chen, Lu Xiao Han et Zhi Gang Zhu. « Anti-Counterfeiting Layer of 2D Colloidal Crystal Based Photonic Material ». Materials Science Forum 972 (octobre 2019) : 185–90. http://dx.doi.org/10.4028/www.scientific.net/msf.972.185.
Texte intégralKaul, Anupama B. « Graphene and The Advent of Other Layered-2D Materials for Nanoelectronics, Photonics and Related Applications ». MRS Proceedings 1549 (2013) : 11–16. http://dx.doi.org/10.1557/opl.2013.812.
Texte intégralThèses sur le sujet "2D material technology"
Hempel, Marek Ph D. Massachusetts Institute of Technology. « Technology and applications of 2D materials in micro- and macroscale electronics ». Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/130201.
Texte intégralCataloged from student-submitted PDF of thesis.
Includes bibliographical references (pages 198-209).
Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and laptops to larger devices like household appliances and cars. However, the size range of electronic devices is still rather limited from the millimeter to meter scale. Being able to extend the reach of electronics from the size of a red blood cell to a skyscraper would enable new applications in many areas including energy production, entertainment, environmental sensing, and healthcare. 2D-materials, a new class of atomically thin materials with a variety of electric properties, are promising for such electronic systems with extreme dimension due to their flexibility and ease of integration. On the macroscopic side, electronics produced on thin films by roll-to-roll fabrication has great potential due to its high throughput and low production cost. Towards this end, this thesis explores the transfer of 2D-materials onto flexible EVA/PET substrates with hot roll lamination and electrochemical delamination using a custom designed roll-to-roll setup. The transfer process is characterized in detail and the lamination of multiple 2D material layers is demonstrated. As exemplary large-scale electronics application, a flexible solar cell with graphene transparent electrode is discussed. On the microscopic side, this thesis presents a 60x60 [mu]m² microsystem platform called synthetic cells or SynCells. This platform offers a variety of building blocks such as chemical sensors and transistors based on molybdenum disulfide, passive germanium timers, iron magnets for actuation, as well as gallium nitride LEDs and solar cells for communication and energy harvesting. Several system-level applications of SynCells are explored such as sensing in a microfluidic channel or spray-coating SynCells on arbitrary surfaces.
by Marek Hempel.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science
ROTTA, DAVIDE. « Emerging devices and materials for nanoelectronics ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.
Texte intégralThis work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.
Jaouen, Kévin. « Backside absorbing layer microscopy : a new tool for the investigation of 2D materials ». Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS296/document.
Texte intégralOptical microscopy based on anti-reflective coatings is a simple yet powerful characterization tool which notably allowed the first observation of graphene in 2004. Since then, the field of two-dimensional (2D) materials has developed rapidly both at the fundamental and applied levels. These ultrathin materials present inhomogeneities (edges, grain boundaries, multilayers, etc.) which strongly impact their physical and chemical properties. Thus their local characterization is essential. This thesis focuses on a recent enhanced-contrast optical microscopy technique, named BALM, based on ultrathin (2-5 nm) and strongly light-absorbing (metallic) anti-reflective layers. The goal is notably to evaluate the benefits of this technique for the study of 2D materials and their chemical reactivity. The various levers to improve 2D materials observation were investigated and optimized for two model materials: graphene oxide and MoS₂ monolayers. The investigation of molecular layer deposition dynamic notably showed the extreme sensitivity of BALM for such measurements and the significant contribution of multilayers anti-reflective coatings to enhance contrast during the observation of 2D materials. One of the main assets of BALM comes from its combination to other techniques. We particularly considered the coupling between optical measurements and electrochemistry for which the anti-reflective layer serves as working electrode. We investigated optically the dynamic of electrochemical reduction of Graphene Oxide (GO), the electrografting of organic layers by diazonium salts reduction on GO and its reduced form (rGO), as well as the intercalation of metallic ions within GO sheets. By combining versatility and high-contrast, BALM is established as a promising tool for the study of 2D materials, especially for the local and in situ characterization of their chemical and electrochemical reactivity
Biasco, Simone. « Photonic engineering of CW, ultrabroad gain, aperiodic quantum cascade lasers at terahertz frequencies integrations with 2D materials and study of the optical mode dynamics ». Doctoral thesis, Scuola Normale Superiore, 2019. http://hdl.handle.net/11384/85908.
Texte intégralUllberg, Nathan. « Field-effect transistor based biosensing of glucose using carbon nanotubes and monolayer MoS2 ». Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397719.
Texte intégralEU Horizon 2020 - SmartVista (825114)
Bandyopadhyay, Avra Sankar. « Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices ». Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.
Texte intégralPrasad, Parmeshwar. « Parametric Manipulation in 2D Material based NEMS Resonators ». Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4669.
Texte intégralDuarte, Henrique Manuel Sousa. « The material non linear analysis of 2D strutures using a radial point interpolation method ». Dissertação, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.
Texte intégralDuarte, Henrique Manuel Sousa. « The material non linear analysis of 2D strutures using a radial point interpolation method ». Master's thesis, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.
Texte intégralKuruva, Hemanjaneyulu. « Addressing the Performance and Reliability Bottlenecks in 2D Transition Metal Dichalcogenide (TMD) Based Transistor Technology ». Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5716.
Texte intégralLivres sur le sujet "2D material technology"
Rogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2022.
Trouver le texte intégralRogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Trouver le texte intégral2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Trouver le texte intégralRogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Trouver le texte intégral2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Trouver le texte intégralRogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Trouver le texte intégralBanks, Craig E., et Dale A. C. Brownson. 2d Materials. Taylor & Francis Group, 2021.
Trouver le texte intégralHoussa, Michel, Alessandro Molle et A. Dimoulas. 2d Materials for Nanoelectronics. Taylor & Francis Group, 2021.
Trouver le texte intégralDimoulas, Athanasios, Michel Houssa et Alessandro Molle. 2D Materials for Nanoelectronics. Taylor & Francis Group, 2016.
Trouver le texte intégralKumar, Santosh, Sanjeev Kumar Raghuwanshi et Yadvendra Singh. 2D Materials for Surface Plasmon Resonance-Based Sensors. Taylor & Francis Group, 2021.
Trouver le texte intégralChapitres de livres sur le sujet "2D material technology"
Rawat, Ankita, et P. K. Kulriya. « 2D/3D Material for Gas Sensor ». Dans Smart Nanostructure Materials and Sensor Technology, 161–78. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2685-3_8.
Texte intégralTiwari, Ram Chandra, et Netra Prakash Bhandary. « Application of Spectral Element Method (SEM) in Slope Instability Analysis ». Dans Progress in Landslide Research and Technology, Volume 1 Issue 1, 2022, 163–74. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-16898-7_11.
Texte intégralIkram, Muhammad, Ali Raza et Salamat Ali. « Advances in Ultrathin 2D Materials ». Dans Nanostructure Science and Technology, 11–29. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-96021-6_2.
Texte intégralYue, Xianfang. « Effect of translation energy on the reaction N(2D) + D2(v = 0, j = 0) ». Dans Advances in Materials Science, Energy Technology and Environmental Engineering, 375–78. P.O. Box 11320, 2301 EH Leiden, The Netherlands, e-mail : Pub.NL@taylorandfrancis.com , www.crcpress.com – www.taylorandfrancis.com : CRC Press/Balkema, 2016. http://dx.doi.org/10.1201/9781315227047-74.
Texte intégralAlharbi, Abdullah, Naif Alshamrani, Hadba Hussain, Mohammed Alhamdan et Salman Alfihed. « Two-Dimensional Materials for Terahertz Emission ». Dans Trends in Terahertz Technology [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.110878.
Texte intégralIkram, Muhammad, Ali Raza, Khurram Shahzad, Ali Haider, Junaid Haider, Abdullah Khan Durrani, Asim Hassan Rizvi, Asghari Maqsood et Mujtaba Ikram. « Advanced Carbon Materials : Base of 21st Century Scientific Innovations in Chemical, Polymer, Sensing and Energy Engineering ». Dans Sol Gel and other Fabrication Methods of Advanced Carbon Materials [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95869.
Texte intégralRaja, Vithaldas, et Ramesh Mohan Thamankar. « Resistive Switching and Hysteresis Phenomena at Nanoscale ». Dans Electric Field in Advancing Science and Technology [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.101500.
Texte intégralSaini, Ayushi, Anil Ohlan, S. K. Dhawan et Kuldeep Singh. « Nanostructured Two-Dimensional (2D) Materials as Potential Candidates for EMI Shielding ». Dans Smart Materials Design for Electromagnetic Interference Shielding Applications, 465–526. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815036428122010014.
Texte intégralR., Muthuminal. « An Overview on 3D Site Modelling in Civil Engineering ». Dans Recent Advances in 3D Imaging, Modeling, and Reconstruction, 108–27. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-5225-5294-9.ch005.
Texte intégralElemans, P. H. M. « Polymer Twin Screw Extrusion : 2D Modeling ». Dans Encyclopedia of Materials : Science and Technology, 7540–43. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/01348-6.
Texte intégralActes de conférences sur le sujet "2D material technology"
Maiti, Rishi, Xie Ti, Hao Wang, Rubab Amin, Chandraman Patil et Volker J. Sorger. « 2D Material based Electro-Absorption Modulator in Si Photonics ». Dans CLEO : Applications and Technology. Washington, D.C. : OSA, 2020. http://dx.doi.org/10.1364/cleo_at.2020.af2i.3.
Texte intégralKoester, Steven J. « Contacts for 2D-Material MOSFETs : Recent Advances and Outstanding Challenges ». Dans 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103009.
Texte intégralKoppens, Frank. « Quantum plasmonics, polaritons and strong light-matter interactions with 2d material heterostructures ». Dans CLEO : Applications and Technology. Washington, D.C. : OSA, 2017. http://dx.doi.org/10.1364/cleo_at.2017.jw1g.1.
Texte intégralBrems, Steven, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai et al. « Overview of scalable transfer approaches to enable epitaxial 2D material integration ». Dans 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT). IEEE, 2023. http://dx.doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381.
Texte intégralSchubert, Martin, Zahra Fekri, Thomas Ackstaller, Yagnika Vekariya, Krzysztof Nieweglowski, Artur Erbe et Karlheinz Bock. « Characterization of gas permeability of polymer membranes for encapsulation of 2D-material sensors ». Dans 2021 44th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2021. http://dx.doi.org/10.1109/isse51996.2021.9467627.
Texte intégralLiang, Gengchiau. « Device Performance of 2D Layered Material Transistors and Their Challenges : A Theoretical Study ». Dans 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421444.
Texte intégralIslam, Md Sherajul, Md Rayid Hasan Mojumder, Asif Hassan, Minhaz Uddin Sohag et Jeongwon Park. « High-Efficiency Multi Quantum Well Blue LED Using 2D-SiC as an Active Material ». Dans 2021 5th International Conference on Electrical Engineering and Information Communication Technology (ICEEICT). IEEE, 2021. http://dx.doi.org/10.1109/iceeict53905.2021.9667843.
Texte intégralBrandner, M., T. Thurner, G. Kukutschki et N. Enzinger. « Optical 2D Displacement and Strain Sensor for Creep Testing of Material Samples in Transparent Fluids ». Dans 2008 IEEE Instrumentation and Measurement Technology Conference - I2MTC 2008. IEEE, 2008. http://dx.doi.org/10.1109/imtc.2008.4547265.
Texte intégralSaini, Shalu, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal et Shree Prakash Tiwari. « Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer ». Dans 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103025.
Texte intégralChhipa, Mayur Kumar, et Massoudi Radhouene. « Scatterer rod radius analysis in 2D photonic crystal structure based channel drop filter using InP material ». Dans 2016 IEEE Conference on Recent Advances in Lightwave Technology (CRALT). IEEE, 2016. http://dx.doi.org/10.1109/cralt.2016.8066035.
Texte intégral