Literatura académica sobre el tema "ZrO2 incorporation"
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Artículos de revistas sobre el tema "ZrO2 incorporation"
Salinas, Daniela, Sichem Guerrero, Cristian H. Campos, Tatiana M. Bustamante y Gina Pecchi. "The Effect of the ZrO2 Loading in SiO2@ZrO2-CaO Catalysts for Transesterification Reaction". Materials 13, n.º 1 (4 de enero de 2020): 221. http://dx.doi.org/10.3390/ma13010221.
Texto completoHassan, S. F. "Mg-ZrO2 Nanocomposite: Relative Effect of Reinforcement Incorporation Technique". Archives of Metallurgy and Materials 61, n.º 3 (1 de septiembre de 2016): 1521–28. http://dx.doi.org/10.1515/amm-2016-0249.
Texto completoAbu El-Fadl, A., Amna M. Eltokhey, A. A. Abu-Sehly y Amina A. Abozeed. "Stabilization of tetragonal phase of nanostructured Fex/ZrO2 system (0 ≤ x ≤ 25) prepared by modified sol-gel method". Physica Scripta 97, n.º 2 (24 de enero de 2022): 025706. http://dx.doi.org/10.1088/1402-4896/ac4864.
Texto completoSripada, Suresh, M. Chandrashekhar Reddy, T. Sreekanth, Rajesh Siripuram y K. Venkateshwarlu. "Influence of Nano Filler (ZrO<sub>2</sub>) on Optical and Thermal Studies of Potassium Doped Polyethylene Oxide Solid Polymer Electrolytes". Materials Science Forum 1048 (4 de enero de 2022): 101–9. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.101.
Texto completoXiong, Chao, Jin Xiao, Yu Zhao, Yuxin Wang, See Leng Tay y Weilong Xu. "Properties of Ni–ZrO2 nanocomposite coatings by electroplating". International Journal of Modern Physics B 33, n.º 01n03 (30 de enero de 2019): 1940024. http://dx.doi.org/10.1142/s0217979219400241.
Texto completoZhang, Ying, Ai Chen, Cheng Liu, Hai Rong Wang y Ze Song Li. "Effect of Nano Zirconia on Microstructure and Electrochemical Behavior of Aluminium-Zinc Sacrificial Anodes". Key Engineering Materials 519 (julio de 2012): 41–44. http://dx.doi.org/10.4028/www.scientific.net/kem.519.41.
Texto completoYin, Guo Xiang, Yong Li, Jun Hong Chen y Xin Kui Gao. "The Wear Mechanism Comparison between MgO-Based Chrome-Free Brick and MgO-Cr2O3 Brick in the Lower Part of RH Vacuum Degasser". Advanced Materials Research 476-478 (febrero de 2012): 1991–96. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.1991.
Texto completoYu, Lei, Hui Liu, Kai Liang, Zhen Di Zang, Jia Cheng Shi, Yi Ru Shen, Qi Tian y Xu Hong Wang. "Isothermal Oxidation Resistance of Zr3[Al(Si)]4C6-Based Composite Ceramics at 1000-1300°C in Air". Solid State Phenomena 281 (agosto de 2018): 444–49. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.444.
Texto completoZhou, Kai, Faqin Xie, Xiangqing Wu y Shaoqing Wang. "Fabrication of High Temperature Oxidation Resistance Nanocomposite Coatings on PEO Treated TC21 Alloy". Materials 13, n.º 1 (18 de diciembre de 2019): 11. http://dx.doi.org/10.3390/ma13010011.
Texto completoKadi, Mohammad W. y R. M. Mohamed. "Enhanced Photocatalytic Activity of ZrO2-SiO2Nanoparticles by Platinum Doping". International Journal of Photoenergy 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/812097.
Texto completoTesis sobre el tema "ZrO2 incorporation"
周益賢. "The Effect of Lanthanum (La) Incorporation in Ultra-Thin ZrO2 High-k Gate Dielectrics". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/77966009299506483899.
Texto completo國立臺灣師範大學
機電科技研究所
98
This study is mainly to investigate the La doping effect on the electrical properties of ultra-thin La-doped ZrO2 (denoted by ZrLaO) films for high-k gate dielectric applications of advanced logic technologies. In this work, ZrLaO films were co-deposited on p-type Si wafers by RF magnetron sputtering in the Ar ambient at room temperature, where ZrO2 and La targets utilized RF power and DC power, respectively, for sputtering. For comparison, ZrO2 films of similar physical thickness were also independently formed on Si wafers. A post-deposition annealing (PDA) was then performed in N2 ambient at 650℃ and 850℃. To form MOS structures, Al was sputtered as the top electrode, followed by annealing at 400℃ in N2. The film thickness was determined by ellipsometry and high-resolution transmission electron microscopy (HRTEM). The crystallization phase of ZrO2 and ZrLaO after PDA was investigated by X-ray diffraction (XRD). The electrical properties of ZrO2 with or without La incorporation were also analyzed and compared, including leakage current measured at 300-450 K, dielectric constant, flat-band voltage shift, current conduction behavior, and Schottky barrier height.
Hsu, Chia-Lin y 許嘉麟. "Studies on the Effect of Al- and Ge-incorporation on ZrO2 Gate Dielectric and Effect of Channel Doping on Ge n-MOSFET". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/y2wz4y.
Texto completo國立交通大學
電子研究所
107
In this thesis, the properties of Al- and Ge-doped ZrO2 dielectric stacks on Ge devices are investigated thoroughly. It is found that the doping of Al suppresses the crystallization of ZrO2, resulting in the reduce of accumulation capacitance; however, it also reduces the leakage current and promotes the hysteresis performance without the deterioration of interface state density. In contrast, the Ge-doped samples exhibit similar performance as the samples with pure ZrO2. On the other hand, the effects of different structures and several Al doping concentrations with various post-metal annealing (PMA) temperatures are also discussed and evaluated, and the best condition is proposed and suggested. In order to further understand the influence of the incorporation of Al into ZrO2 as gate dielectric, the samples with thicker physical thickness and higher PMA temperatures are fabricated. It is discovered that the doping of Al will increase the critical crystallization temperature and the onset crystallization thickness of ZrO2, which accounts for the retardation of crystallization. Overall, the pure ZrO2 samples still exhibit better J_G-EOT behavior, while the Al-doped samples own lower leakage current. In addition, all the Al- and Ge- doped samples have better hysteresis than the pure ZrO2 ones without the deterioration of the interfacial layer. Next, Germanium (Ge) n-MOSFETs with various channel doping concentration are fabricated, and the effects of channel doping are fully discussed and investigated. The overall electrical properties are evaluated, including transfer and output characteristics, the number of interface traps and border traps, and the channel mobility. In previously proposed researches, it is found that the on-current and mobility will severely degrade when the substrate doping concentration reaches 1e18. However, in this thesis, only slight deterioration of on-current and mobility is observed at the higher doping concentration, probably due to the Coulomb scattering of interface trap densities generated after implantation. Then, for the samples with severe on-current and mobility degradation, the possible speculation and solution are proposed. it is suspected that the severe degradation may result from the extra Coulomb scattering caused by the defects generated at the interface after implantation with high energy. In addition, the quality of Ge wafer may also be a concern. On the other hand, it is discovered that the Coulomb scattering and the surface roughness scattering are more serious in Ge n-MOSFET compared to silicon. As a result, if the interface and substrate of Ge n-MOSFET can be improved more with appropriate thermal budget or high-quality wafer, it is possible to achieve better performance.
Actas de conferencias sobre el tema "ZrO2 incorporation"
Kao, Chyuan-Haur, Chih-Ju Lin, Hsin-Yuan Wang y Szu-Chien Chen. "The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications". En 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6467750.
Texto completoZhu, Ze, Yi Li, Fengshun Wu y Yan-cheong Chan. "Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles". En 2016 6th Electronic System-Integration Technology Conference (ESTC). IEEE, 2016. http://dx.doi.org/10.1109/estc.2016.7764722.
Texto completoTsui, Y. C. y T. W. Clyne. "Adhesion of Thermal Barrier Coating Systems and Incorporation of an Oxidation Barrier Layer". En ITSC 1996, editado por C. C. Berndt. ASM International, 1996. http://dx.doi.org/10.31399/asm.cp.itsc1996p0275.
Texto completoLimarga, A. M., S. Widjaja y T. H. Yip. "Finite Element Analysis on Residual Stress in a Plasma-Sprayed Functionally Graded Thermal Barrier Coating". En ITSC2001, editado por Christopher C. Berndt, Khiam A. Khor y Erich F. Lugscheider. ASM International, 2001. http://dx.doi.org/10.31399/asm.cp.itsc2001p0943.
Texto completoJoo, Moon Sig, Seung Ryong Lee, Hongseon Yang, Kwon Hong, Se-Aug Jang, Jaehyoung Koo, Jaemun Kim et al. "The incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices". En 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.f-7-1.
Texto completoAl-Raqom, F., J. F. Klausner, D. Hahn, J. Petrasch y S. A. Sherif. "High Temperature Fluidized Bed Reactor Kinetics With Sintering Inhibitors for Iron Oxidation". En ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-62808.
Texto completo"Characterisation of cracks in ZrO2 ceramic using a tri-beam microscope". En Microscience Microscopy Congress 2023 incorporating EMAG 2023. Royal Microscopical Society, 2023. http://dx.doi.org/10.22443/rms.mmc2023.119.
Texto completoRong, Zhicheng, Chang Liu y Yingbin Hu. "4D Printing of Complex Ceramic Structures via Controlling Zirconia Contents and Patterns". En ASME 2021 16th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/msec2021-63642.
Texto completoGuo, Jinxin, Ryuta Fujii, Takanori Ono y Yasuo Tomita. "Thermal stability of ZrO_2 nanoparticle-polymer composite volume gratings incorporating multifunctional chain transfer agents". En JSAP-OSA Joint Symposia. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/jsap.2014.18p_c3_4.
Texto completoJ, Chandradass, Thirugnanasambandham T, R. Rajendran y Palanivendhan Murugadoss. "Effect of ZrO <sub>2</sub> Nanoparticles Loading on the Tribo-Mechanical Behavior of Magnesium Alloy Nanocomposites". En International Conference on Advances in Design, Materials, Manufacturing and Surface Engineering for Mobility. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2023. http://dx.doi.org/10.4271/2023-28-0130.
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