Literatura académica sobre el tema "Wind band gap Semiconductors"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "Wind band gap Semiconductors".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Artículos de revistas sobre el tema "Wind band gap Semiconductors"
Rome, Grace, Fry Intia, Talysa Klein, Zebulon Schicht, Adele Tamboli, Emily L. Warren y Ann L. Greenaway. "Utilizing a Transparent Conductive Encapsulant to Protect Photoelectrodes during Solar Fuel Formation". ECS Meeting Abstracts MA2023-01, n.º 55 (28 de agosto de 2023): 2705. http://dx.doi.org/10.1149/ma2023-01552705mtgabs.
Texto completoWoods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson y Andriy Zakutayev. "Wide Band Gap Chalcogenide Semiconductors". Chemical Reviews 120, n.º 9 (6 de abril de 2020): 4007–55. http://dx.doi.org/10.1021/acs.chemrev.9b00600.
Texto completoMedvid, Arthur, Igor Dmitruk, Pavels Onufrijevs y Iryna Pundyk. "Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation". Solid State Phenomena 131-133 (octubre de 2007): 559–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.559.
Texto completoLI, KEYAN, YANJU LI y DONGFENG XUE. "BAND GAP PREDICTION OF ALLOYED SEMICONDUCTORS". Functional Materials Letters 04, n.º 03 (septiembre de 2011): 217–19. http://dx.doi.org/10.1142/s179360471100210x.
Texto completoNag, B. R. "Direct band-gap energy of semiconductors". Infrared Physics & Technology 36, n.º 5 (agosto de 1995): 831–35. http://dx.doi.org/10.1016/1350-4495(95)00023-r.
Texto completoKeßler, P., K. Lorenz y R. Vianden. "Implanted Impurities in Wide Band Gap Semiconductors". Defect and Diffusion Forum 311 (marzo de 2011): 167–79. http://dx.doi.org/10.4028/www.scientific.net/ddf.311.167.
Texto completoJin, Haiwei, Li Qin, Lan Zhang, Xinlin Zeng y Rui Yang. "Review of wide band-gap semiconductors technology". MATEC Web of Conferences 40 (2016): 01006. http://dx.doi.org/10.1051/matecconf/20164001006.
Texto completoWoods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson y Andriy Zakutayev. "Correction to Wide Band Gap Chalcogenide Semiconductors". Chemical Reviews 120, n.º 15 (3 de agosto de 2020): 8035. http://dx.doi.org/10.1021/acs.chemrev.0c00643.
Texto completoCam, Hoang Ngoc, Nguyen Van Hieu y Nguyen Ai Viet. "Excitons in direct band gap cubic semiconductors". Annals of Physics 164, n.º 1 (octubre de 1985): 172–88. http://dx.doi.org/10.1016/0003-4916(85)90007-7.
Texto completoSalvatori, S. "Wide-band gap semiconductors for noncontact thermometry". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, n.º 1 (2001): 219. http://dx.doi.org/10.1116/1.1342007.
Texto completoTesis sobre el tema "Wind band gap Semiconductors"
Dorji, Chencho. "Etude des propriétés des isolants liquides pour l’encapsulation des substrats d’électronique de puissance". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT022.
Texto completoPower modules based on wide band gap semiconductor has the potential to withstand high temperature (junction temperature >>200°C) and high voltage (blocking voltage of 10kV) contary to silicone based power module. However, silicone gel, the most commonly used encapsulant material in power modules cannot operatrate above 200°C. Moreover, electrical breakdown and partial discharge events results in permanent damage of the power module. In this work, we propose liquid dielectric as a potential encapsulant that may have better electrical and thermal performance than silicone gel. We did dielectric characterization of several potential liquids and developed field simulation model to study the electric field at triple point in power modules. Partial discharge measurements were made under AC and fast rise with different power electronic substrates embedded in liquid dielectrics. We also investigated the possibility of cooling power devices with EHD heat transfer enhancement and performed some supplementary experiments on thermal againg of liquids. The results indicated that liquids have potential to be used as encapsulant in power modules
Chan, Yung. "Optical functions of wide band gap semiconductors /". View the Table of Contents & Abstract, 2004. http://sunzi.lib.hku.hk/hkuto/record/B32021264.
Texto completoTirino, Louis. "Transport Properties of Wide Band Gap Semiconductors". Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.
Texto completoChan, Yung y 陳勇. "Optical functions of wide band gap semiconductors". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.
Texto completoSaadatkia, Pooneh. "Optoelectronic Properties of Wide Band Gap Semiconductors". Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.
Texto completoFarahmand, Maziar. "Advanced simulation of wide band gap semiconductor devices". Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14777.
Texto completoKusch, Gunnar. "Characterization of low conductivity wide band gap semiconductors". Thesis, University of Strathclyde, 2016. http://digitool.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=27392.
Texto completoMickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors". Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.
Texto completoDisertacija skirta krūvininkų rekombinacijos tyrimams plačiatarpiuose nitridiniuose puslaidininkiuose bei jų dariniuose. Kompleksiniai eksperimentiniai tyrimai buvo atlikti naudojant kelias skirtingas metodikas. Atlikti krūvininkų dinamikos GaN sluoksniuose tyrimai labai žemų ir aukštų sužadinimų sąlygomis. Pasiūlytas naujas liuminescencijos gesimo kinetikų interpretavimo metodas, siejant liuminescencijos ir šviesa indukuotų dinaminių gardelių kinetikas. Naujas požiūris į geltonosios liuminescencijos juostą GaN sluoksniuose leido susieti geltonosios liuminescencijos intensyvumą su krūvininkų gyvavimo trukme. Skirtingomis technologijomis augintų AlGaN sluoksnių palyginimas suteikė informacijos apie juostos potencialo fliuktuacijas bei krūvininkų gyvavimo trukmę ribojančius veiksnius AlGaN medžiagose. Atskleista naujų krūvininkų dinamikos daugialakštėse AlGaN/AlGaN kvantinėse duobėse ypatumų – vidinio elektrinio lauko bei kvantinės duobės pločio fliuktuacijų sąlygotos lokalizacijos įtaka krūvininkų dinamikai. Dauguma tirtų bandinių buvo auginti naudojant MEMOCVDTM technologiją ir tyrimai patvirtino šios technologijos potencialą siekiant pagerinti medžiagų kokybę.
Bellotti, E. (Enrico). "Advanced modeling of wide band gap semiconductor materials and devices". Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15354.
Texto completoLajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors". Doctoral thesis, Universitätsbibliothek Leipzig, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-102799.
Texto completoLibros sobre el tema "Wind band gap Semiconductors"
1953-, Prelas Mark Antonio, North Atlantic Treaty Organization. Scientific Affairs Division. y NATO Advanced Research Workshop on Wide Band Gap Electronic Materials: Diamond, Aluminum Nitride, and Boron Nitride (1994 : Minsk, Belarus), eds. Wide band gap electronic materials. Dordrecht: Kluwer Academic Publishers, 1995.
Buscar texto completoUnited States. National Aeronautics and Space Administration., ed. Further improvements in program to calculate electronic properties of narrow band gap materials: Final report. [Washington, DC: National Aeronautics and Space Administration, 1992.
Buscar texto completoYang, Fan. Electromagnetic band gap structures in antenna engineering. New York: Cambridge University Press, 2008.
Buscar texto completoT͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.
Buscar texto completoSymposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS (1998 Strasbourg, France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France, June 16-19, 1998. Amsterdam: Elsevier, 1999.
Buscar texto completoYi-Gao, Sha y United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.
Buscar texto completoYi-Gao, Sha y United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.
Buscar texto completoTrieste ICTP-IUPAP Semiconductor Symposium (7th 1992). Wide-band-gap semiconductors: Proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Editado por Van de Walle, Chris Gilbert. Amsterdam: North-Holland, 1993.
Buscar texto completoSymposium, L. on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France 16-19 June 1998. Amsterdam: Elsevier, 1999.
Buscar texto completoUnited States. National Aeronautics and Space Administration., ed. Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport. Bellingham, Wash: Society of Photo-Optical Instrumentation Engineers, 1997.
Buscar texto completoCapítulos de libros sobre el tema "Wind band gap Semiconductors"
Ravichandran, K., S. Suvathi, P. Ravikumar y R. Mohan. "Wide Band Gap Semiconductors". En Handbook of Semiconductors, 40–53. Boca Raton: CRC Press, 2024. http://dx.doi.org/10.1201/9781003450146-4.
Texto completo"Copyright". En Wide-Band-Gap Semiconductors, iv. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50001-3.
Texto completo"Front Matter". En Wide-Band-Gap Semiconductors, v. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50002-5.
Texto completoFrova, A. y E. Tosatti. "Preface". En Wide-Band-Gap Semiconductors, vii—viii. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50003-7.
Texto completoVan de Walle, Chris G. "Introduction". En Wide-Band-Gap Semiconductors, ix—x. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50004-9.
Texto completoDavis, Robert F. "Thin films and devices of diamond, silicon carbide and gallium nitride". En Wide-Band-Gap Semiconductors, 1–15. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50005-0.
Texto completoNurmikko, Arto V. y Robert L. Gunshor. "Optical physics and laser devices in II–VI quantum confined heterostructures". En Wide-Band-Gap Semiconductors, 16–26. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50006-2.
Texto completoWalker, C. T., J. M. DePuydt, M. A. Haase, J. Qiu y H. Cheng. "Blue–green II–VI laser diodes". En Wide-Band-Gap Semiconductors, 27–35. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50007-4.
Texto completoMoustakas, T. D., T. Lei y R. J. Molnar. "Growth of GaN by ECR-assisted MBE". En Wide-Band-Gap Semiconductors, 36–49. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50008-6.
Texto completoYoshikawa, Akihiko. "Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe". En Wide-Band-Gap Semiconductors, 50–64. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50009-8.
Texto completoActas de conferencias sobre el tema "Wind band gap Semiconductors"
Chambouleyron, I. "VARIABLE BAND-GAP AMORPHOUS SEMICONDUCTORS". En Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials. WORLD SCIENTIFIC, 1988. http://dx.doi.org/10.1142/9789814541589_0023.
Texto completoSpirkoska, D., A. Efros, S. Conesa-Boj, J. R. Morante, J. Arbiol, A. Fontcuberta i Morral, G. Abstreiter, Jisoon Ihm y Hyeonsik Cheong. "Single Material Band Gap Engineering in GaAs Nanowires". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666516.
Texto completoWilke, Ingrid. "Terahertz emission from narrow band gap semiconductors". En Optics East 2007, editado por Mehdi Anwar, Anthony J. DeMaria y Michael S. Shur. SPIE, 2007. http://dx.doi.org/10.1117/12.735101.
Texto completoTen, Sergey Y., Fritz Henneberger, Michael Rabe y Nasser Peyghambarian. "Exciton tunneling in wide-band-gap semiconductors". En Photonics West '96, editado por Weng W. Chow y Marek Osinski. SPIE, 1996. http://dx.doi.org/10.1117/12.238966.
Texto completoIshikawa, Masato, Takashi Nakayama, Jisoon Ihm y Hyeonsik Cheong. "Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666264.
Texto completoKuriyama, K., T. Ishikawa y K. Kushida. "Optical Band Gap and Bonding Character of Li3GaN2". En PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730466.
Texto completoDietl, Tomasz. "Spintronics And Ferromagnetism In Wide-Band-Gap Semiconductors". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1993996.
Texto completoFeix, Gudrun. "Advanced packaging for wide band gap power semiconductors". En 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2017. http://dx.doi.org/10.23919/ltb-3d.2017.7947427.
Texto completoKhurgin, Jacob B. "Band gap engineering for laser cooling of semiconductors". En Integrated Optoelectronic Devices 2006, editado por Marek Osinski, Fritz Henneberger y Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.644138.
Texto completoCyrille, Duchesne, Cussac Philippe y Chauffleur Xavier. "Interconnection technology for new wide band gap semiconductors". En 2013 15th European Conference on Power Electronics and Applications (EPE). IEEE, 2013. http://dx.doi.org/10.1109/epe.2013.6634619.
Texto completoInformes sobre el tema "Wind band gap Semiconductors"
Edgar, James H. MOVPE Reactor for Deposition of Wide Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, abril de 2001. http://dx.doi.org/10.21236/ada393589.
Texto completoHommerich, Uwe. Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1999. http://dx.doi.org/10.21236/ada369833.
Texto completoKouvetakis, John. Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, mayo de 2007. http://dx.doi.org/10.21236/ada482288.
Texto completoCheng, Hung Hsiang. Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn. Fort Belvoir, VA: Defense Technical Information Center, marzo de 2012. http://dx.doi.org/10.21236/ada558773.
Texto completo