Literatura académica sobre el tema "Waveguide-coupled photodetector"
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Artículos de revistas sobre el tema "Waveguide-coupled photodetector"
Lu, Zi-Qing, Qin Han, Han Ye, Shuai Wang, Feng Xiao y Fan Xiao. "Low dark current and high bandwidth evanescent wave coupled PIN photodetector array for 400 Gbit/s receiving system". Acta Physica Sinica 70, n.º 20 (2021): 208501. http://dx.doi.org/10.7498/aps.70.20210781.
Texto completoTaylor, R. B., P. E. Burrows y S. R. Forrest. "An integrated, crystalline organic waveguide-coupled InGaAs photodetector". IEEE Photonics Technology Letters 9, n.º 3 (marzo de 1997): 365–67. http://dx.doi.org/10.1109/68.556075.
Texto completoLy-Gagnon, Dany-Sebastien, Krishna C. Balram, Justin S. White, Pierre Wahl, Mark L. Brongersma y David A. B. Miller. "Routing and photodetection in subwavelength plasmonic slot waveguides". Nanophotonics 1, n.º 1 (1 de julio de 2012): 9–16. http://dx.doi.org/10.1515/nanoph-2012-0002.
Texto completoHsu, Shih-Hsiang. "Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection". Sensors 10, n.º 12 (2 de diciembre de 2010): 10863–75. http://dx.doi.org/10.3390/s101210863.
Texto completoDing, Yunhong, Zhao Cheng, Xiaolong Zhu, Kresten Yvind, Jianji Dong, Michael Galili, Hao Hu, N. Asger Mortensen, Sanshui Xiao y Leif Katsuo Oxenløwe. "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz". Nanophotonics 9, n.º 2 (25 de febrero de 2020): 317–25. http://dx.doi.org/10.1515/nanoph-2019-0167.
Texto completoLi, Hongqiang, Sai Zhang, Zhen Zhang, Shasha Zuo, Shanshan Zhang, Yaqiang Sun, Ding Zhao y Zanyun Zhang. "Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator". Nanomaterials 10, n.º 9 (27 de agosto de 2020): 1683. http://dx.doi.org/10.3390/nano10091683.
Texto completoLiu, Shao-Qing, Xiao-Hong Yang, Yu Liu, Bin Li y Qin Han. "Design and fabrication of a high-performance evanescently coupled waveguide photodetector". Chinese Physics B 22, n.º 10 (octubre de 2013): 108503. http://dx.doi.org/10.1088/1674-1056/22/10/108503.
Texto completoFujikata, Junichi, Masataka Noguchi, Riku Katamawari, Kyosuke Inaba, Hideki Ono, Daisuke Shimura, Yosuke Onawa, Hiroki Yaegashi y Yasuhiko Ishikawa. "High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation". Optics Express 31, n.º 6 (9 de marzo de 2023): 10732. http://dx.doi.org/10.1364/oe.484380.
Texto completoHarris, Nicholas C., Tom Baehr-Jones, Andy Eu-Jin Lim, T. Y. Liow, G. Q. Lo y Michael Hochberg. "Noise Characterization of a Waveguide-Coupled MSM Photodetector Exceeding Unity Quantum Efficiency". Journal of Lightwave Technology 31, n.º 1 (enero de 2013): 23–27. http://dx.doi.org/10.1109/jlt.2012.2227940.
Texto completoKapser, K. y P. P. Deimel. "Enhanced polarization‐dependent coupling between an optical waveguide and a laterally coupled photodetector". Journal of Applied Physics 70, n.º 1 (julio de 1991): 13–16. http://dx.doi.org/10.1063/1.350327.
Texto completoTesis sobre el tema "Waveguide-coupled photodetector"
PALMIERI, ANDREA. "Multiphysics modelling of high-speed optoelectronic devices for silicon photonics platforms". Doctoral thesis, Politecnico di Torino, 2020. http://hdl.handle.net/11583/2849030.
Texto completoGeng, Zhen y 耿震. "Monolithic Waveguide Coupled Microdisk Photodetectors based on InAs Quantum Dots". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/59590084482500367712.
Texto completo國立臺灣大學
光電工程學研究所
103
In this thesis, we demonstrate the monolithic waveguide coupled microdisk photodetector based on InAs quantum dots. By embedding InAs self-assembled quantum dots (QDs) in a GaAs-based microdisk cavity, a resonant-cavity-enhanced waveguide photodetector (PD) using monolithic processing is experimentally demonstrated around 1140 nm wavelength. The microdisk resonant cavity is a vertical PIN diode with three InAs/GaAs QD active layers. QD structures provide better performances such as ultra-low dark current, which contributes to high responsivity and signal-to-noise-ratio, in comparison with other active materials. Microdisk structures efficiently enhance the absorption of InAs QDs. In addition, their compact size makes it suitable for integrated optics. Furthermore, the wavelength selectivity of the disk resonant cavity also makes the PD preferable for wavelength-division multiplexing. Moreover, from our InAs quantum dots sample (DO3525), we have successfully demonstrated the selective area quantum dots intermixing by the IFVD technique using SiO2/TiO2 cladding layers. We expect to apply this method to our QD devices in the future.
Chen, Wei-Ting y 陳偉庭. "A Novel Self-aligned Microbonding Technique for Making Butt-Coupled Silicon Germanium Metal-Semiconductor-Metal Waveguide Photodetectors". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/88431076431001373805.
Texto completo國立清華大學
光電工程研究所
101
Monolithic integration of silicon and germanium devices is essential in state-of-the-art electronic and optoelectronic applications; for example, high speed photodetectors, high speed heterojunction bipolar transistors and so on, have been reported with superior performances. However, direct epitaxial growth of Ge on Si is critical due to the 4% lattice mismatch between Ge and Si. Moreover, to reduce the threading dislocation defects at the growth interface, high-temperature annealing or processing is required, challenging the integratibility with electronic devices. Furthermore, for some applications, the Ge structure should be integrated with Si devices on the same plane, which cause the process even critical. In this thesis, we develop a novel process using self-aligned microbonding technique in combination with rapid melt growth method, successfully demonstrating a Ge metal-semiconductor-metal photodetector butt-coupled to a Si waveguide. Compared with evanescently coupled Ge photodetectors, butt-coupling devices have been presented with large photo-responsivity and operation bandwidth. However, they are very difficult to be implemented by the conventional epitaxy process. Here, we design and fabricate this device by using our approach in a much simple way. The measured dark current is small about 0.29μA at 1310nm at -1V bias. The absorption efficiency is very high and the operation speed can be up to 25 GHz, if a contact barrier modulation technique is applied. This device potentially can be integrated with electronic devices and other photonic components, for an application of high-speed optical interconnects.
Actas de conferencias sobre el tema "Waveguide-coupled photodetector"
Edelstein, Shahar, S. R. K. Chaitanya Indukuri, Noa Mazurski y Uriel Levy. "Waveguide-Coupled Mid-IR Photodetector Based on Interlayer Excitons Absorption in a WS2/HfS2 Heterostructure". En CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.sm3k.8.
Texto completoTu, Zhijuan, Kaibo Liu, Huaxiang Yi, Runxi Zhou, Xingjun Wang, Zhiping Zhou y Zhangyuan Chen. "A compact evanescently-coupled germanium PIN waveguide photodetector". En Photonics Asia, editado por Zhiping Zhou y Kazumi Wada. SPIE, 2012. http://dx.doi.org/10.1117/12.2001221.
Texto completoRaza, Abdul M., Guang W. Yuan, Charles K. Thangaraj, Thomas W. Chen y Kevin L. Lear. "Waveguide-coupled CMOS photodetector for on-chip optical interconnects". En Optical Science and Technology, the SPIE 49th Annual Meeting, editado por Khan M. Iftekharuddin y Abdul Ahad S. Awwal. SPIE, 2004. http://dx.doi.org/10.1117/12.559875.
Texto completoLee, Benjamin G., Alexander V. Rylyakov, Jonathan E. Proesel, Christian W. Baks, Renato Rimolo-Donadio, Clint L. Schow, Anand Ramaswamy, Jonathan E. Roth, Matt Jacob-Mitos y Gregory A. Fish. "60-Gb/s Receiver Employing Heterogeneously Integrated Silicon Waveguide Coupled Photodetector". En CLEO: Science and Innovations. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cleo_si.2013.cth5d.4.
Texto completoSoole, J. B. D., H. Schumacher, H. P. LeBlanc, R. Bhat y M. A. Koza. "Monolithically integrated butt-coupled InGaAs metal–semiconductor–metal waveguide photodetector by selective area regrowth". En Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/ipr.1990.tua3.
Texto completoDing, Qian y Andreas Schenk. "Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height". En 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2021. http://dx.doi.org/10.1109/nusod52207.2021.9541438.
Texto completoWang, Jun, Naidi Cui, Junbo Feng, Heng Zhao, Yang Hu, Guowei Cao y Jin Guo. "High performance waveguide-coupled germanium p-i-n photodetector on doped silicon". En Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, editado por Junhao Chu, Qifeng Yu, Huilin Jiang y Junhong Su. SPIE, 2021. http://dx.doi.org/10.1117/12.2587396.
Texto completoYang, Kai, Julian Cheng, K. M. Patel, T. J. Eustis, D. A. Louderback, X.-J. Jin, J. Schoengarth, C.-Y. Chao, M.-Y. Shih y P. S. Guilfoyle. "Integrated Waveguide-Grating-Coupled VCSEL/Photodetector Arrays with High Coupled Power for Dense High-Speed Interconnects". En CLEO 2007. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452992.
Texto completoWang, Jun, Naidi Cui, Junbo Feng, Yang Hu, Guowei Cao, Heng Zhao y Jin Guo. "Performance enhancement of waveguide-coupled Ge-on-Si photodetector with additional p-i-n junction". En Optoelectronic Devices and Integration IX, editado por Baojun Li, Changyuan Yu, Xuping Zhang y Xinliang Zhang. SPIE, 2020. http://dx.doi.org/10.1117/12.2575429.
Texto completoChoe, Joong-Seon, Won-Seok Han, Young-Ho Ko, Duk Jun Kim, Seo-Young Lee, Young-Tak Han, Hyun-Do Jung, Chun Ju Youn, Jong-Hoi Kim y Yong-Hwan Kwon. "Waveguide Photodetector Designed to be Butt-Coupled with 2%-Δ Silica Planar Lightwave Circuit Devices". En Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/acpc.2015.asu2a.25.
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