Artículos de revistas sobre el tema "Vth instability"
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Senzaki, Junji, Atsushi Shimozato, Kazutoshi Kojima, Shinsuke Harada, Keiko Ariyoshi, Takahito Kojima, Yasunori Tanaka y Hajime Okumura. "Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces". Materials Science Forum 778-780 (febrero de 2014): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.521.
Texto completoTadjer, Marko J., Karl D. Hobart, Eugene A. Imhoff y Fritz J. Kub. "Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices". Materials Science Forum 600-603 (septiembre de 2008): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1147.
Texto completoSometani, Mitsuru, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda y Hajime Okumura. "Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method". Materials Science Forum 821-823 (junio de 2015): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.685.
Texto completoNa, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee et al. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors". Nanomaterials 14, n.º 5 (4 de marzo de 2024): 466. http://dx.doi.org/10.3390/nano14050466.
Texto completoKutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Masatoshi Tsujimura, Toru Onishi, Hirokazu Fujiwara, Kensaku Yamamoto y Takashi Kanemura. "Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs". Materials Science Forum 858 (mayo de 2016): 607–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.607.
Texto completoSenzaki, Junji, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi y Hajime Okumura. "Electrical Properties of MOS Structures on 4H-SiC (11-20) Face". Materials Science Forum 740-742 (enero de 2013): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.621.
Texto completoKim, Sang Sub, Pyung Ho Choi, Do Hyun Baek, Jae Hyeong Lee y Byoung Deog Choi. "Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de octubre de 2015): 7555–58. http://dx.doi.org/10.1166/jnn.2015.11167.
Texto completoOkamoto, Mitsuo, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano y Hajime Okumura. "Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET". Materials Science Forum 897 (mayo de 2017): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.897.549.
Texto completoDeb, Arkadeep, Jose Ortiz-Gonzalez, Mohamed Taha, Saeed Jahdi, Phillip Mawby y Olayiwola Alatise. "Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs". Materials Science Forum 1091 (5 de junio de 2023): 61–66. http://dx.doi.org/10.4028/p-lidhbt.
Texto completoRescher, Gerald, Gregor Pobegen y Thomas Aichinger. "Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs". Materials Science Forum 821-823 (junio de 2015): 709–12. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.709.
Texto completoLi, Shanjie, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang y Guoqiang Li. "Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress". Applied Physics Letters 121, n.º 6 (8 de agosto de 2022): 062101. http://dx.doi.org/10.1063/5.0094957.
Texto completoKoo, Sang-Mo y Tae-Jun Ha. "Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de octubre de 2015): 7800–7803. http://dx.doi.org/10.1166/jnn.2015.11193.
Texto completoLi, Xiangdong, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan et al. "Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization". Micromachines 14, n.º 5 (12 de mayo de 2023): 1042. http://dx.doi.org/10.3390/mi14051042.
Texto completoWu, Ruizhu, Simon Mendy, Nereus Agbo, Jose Ortiz Gonzalez, Saeed Jahdi y Olayiwola Alatise. "Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions". Energies 14, n.º 20 (19 de octubre de 2021): 6834. http://dx.doi.org/10.3390/en14206834.
Texto completoAsllani, Besar, Alberto Castellazzi, Dominique Planson y Hervé Morel. "Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs". Materials Science Forum 963 (julio de 2019): 184–88. http://dx.doi.org/10.4028/www.scientific.net/msf.963.184.
Texto completoGrossl Bade, Tamiris, Hassan Hamad, Adrien Lambert, Hervé Morel y Dominique Planson. "Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs". Electronics 12, n.º 11 (3 de junio de 2023): 2529. http://dx.doi.org/10.3390/electronics12112529.
Texto completoLiu, Han-Wen, Tzu-Cheng Hung y Bo-Xiang Huang. "(Digital Presentation) Instability of α-Si:H TFTs under Simultaneous Ultraviolet Light Illumination and Different Bias Stresses". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1262. http://dx.doi.org/10.1149/ma2022-02351262mtgabs.
Texto completoRescher, Gerald, Gregor Pobegen y Tibor Grasser. "Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress". Materials Science Forum 858 (mayo de 2016): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.858.481.
Texto completoGo, Donghyun, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim y Jeong-Soo Lee. "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory". Micromachines 14, n.º 11 (28 de octubre de 2023): 2007. http://dx.doi.org/10.3390/mi14112007.
Texto completoLee, Sangmin, Pyungho Choi, Minjun Song, Gaeun Lee, Nara Lee, Bohyeon Jeon y Byoungdeog Choi. "Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress". Journal of Nanoscience and Nanotechnology 21, n.º 8 (1 de agosto de 2021): 4277–84. http://dx.doi.org/10.1166/jnn.2021.19392.
Texto completoElangovan, Surya, Stone Cheng y Edward Yi Chang. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications". Energies 13, n.º 10 (21 de mayo de 2020): 2628. http://dx.doi.org/10.3390/en13102628.
Texto completoLim, Sang Chul, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim y Tae Hyoung Zyung. "Instability of OTFT with Organic Gate Dielectrics". Solid State Phenomena 124-126 (junio de 2007): 407–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.407.
Texto completoLEE, YONG K. "CONTROLLING INSTABILITIES OF HYDROGENERATED a-Si:H TFT UNDER BIAS TEMPERATURE STRESSING". Modern Physics Letters B 22, n.º 04 (10 de febrero de 2008): 263–68. http://dx.doi.org/10.1142/s0217984908014730.
Texto completoLee, Seung-Hun, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo-Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang y Jeong Hwan Kim. "Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications". Materials 12, n.º 1 (3 de enero de 2019): 137. http://dx.doi.org/10.3390/ma12010137.
Texto completoPark, Jee Ho, Sohyung Lee, Hee Sung Lee, Sung Ki Kim, Kwon-Shik Park y Soo-Young Yoon. "Correlation between spin density and Vth instability of IGZO thin-film transistors". Current Applied Physics 18, n.º 11 (noviembre de 2018): 1447–50. http://dx.doi.org/10.1016/j.cap.2018.08.016.
Texto completoGonzalez, Jose Ortiz, Olayiwola Alatise y Philip A. Mawby. "Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs". Materials Science Forum 963 (julio de 2019): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.963.749.
Texto completoWang, Kai Yu, Cai Ping Wan, Wen Hao Lu, Nian Nian Ge y Heng Yu Xu. "Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors". Key Engineering Materials 950 (31 de julio de 2023): 133–38. http://dx.doi.org/10.4028/p-fagd0d.
Texto completoElangovan, Surya, Edward Yi Chang y Stone Cheng. "Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress". Energies 14, n.º 8 (13 de abril de 2021): 2170. http://dx.doi.org/10.3390/en14082170.
Texto completoMurakami, Eiichi, Takahiro Furuichi, Tatsuya Takeshita y Kazuhiro Oda. "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V". Materials Science Forum 924 (junio de 2018): 711–14. http://dx.doi.org/10.4028/www.scientific.net/msf.924.711.
Texto completoIdris, Muhammad I., Ming Hung Weng, H. K. Chan, A. E. Murphy, Dave A. Smith, R. A. R. Young, Ewan P. Ramsay, David T. Clark, Nick G. Wright y Alton B. Horsfall. "Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors". Materials Science Forum 897 (mayo de 2017): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.897.513.
Texto completoLi, Jiye, Yuqing Zhang, Hao Peng, Huan Yang, Lei Lu y Shengdong Zhang. "9.2: Mechanism of H2O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs". SID Symposium Digest of Technical Papers 54, S1 (abril de 2023): 94–97. http://dx.doi.org/10.1002/sdtp.16230.
Texto completoHuang, Sen, Shu Yang, John Roberts y Kevin J. Chen. "Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement". physica status solidi (c) 9, n.º 3-4 (29 de febrero de 2012): 923–26. http://dx.doi.org/10.1002/pssc.201100302.
Texto completoNeema, Vaibhav, Kuldeep Raguwanshi, Ambika Prasad Shah y Santosh Kumar Vishvakarma. "Vth Extraction Based Run Time Transistor Width (TWOS) Module for On-Chip Negative Bias Temperature Instability (NBTI) Mitigation". Sensor Letters 17, n.º 5 (1 de mayo de 2019): 385–92. http://dx.doi.org/10.1166/sl.2019.4103.
Texto completoCho, Sanghyun, Seohan Kim, Doyeong Kim, Moonsuk Yi, Junseok Byun y Pungkeun Song. "Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors". Coatings 9, n.º 1 (15 de enero de 2019): 44. http://dx.doi.org/10.3390/coatings9010044.
Texto completoFlorentin, Matthieu, Mihaela Alexandru, Aurore Constant, Bernd Schmidt y Philippe Godignon. "10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters". Materials Science Forum 806 (octubre de 2014): 121–25. http://dx.doi.org/10.4028/www.scientific.net/msf.806.121.
Texto completoBai, Zhi Qiang, Xiao Yan Tang, Chao Han, Yan Jing He, Qing Wen Song, Yi Fan Jia, Yi Men Zhang y Yu Ming Zhang. "The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET". Materials Science Forum 954 (mayo de 2019): 144–50. http://dx.doi.org/10.4028/www.scientific.net/msf.954.144.
Texto completoWang, Dapeng, Mamoru Furuta, Shigekazu Tomai y Koki Yano. "Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors". Nanomaterials 10, n.º 9 (9 de septiembre de 2020): 1782. http://dx.doi.org/10.3390/nano10091782.
Texto completoJung, Seyeon, Taehoon Sung, Sein Lee y J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Texto completoLee, Geon Hee, Jang Kwon Lim, Sang Mo Koo y Mietek Bakowski. "Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD". Materials Science Forum 1091 (5 de junio de 2023): 55–59. http://dx.doi.org/10.4028/p-nnor4r.
Texto completoRuderman, M. S., E. Verwichte, R. Erdélyi y M. Goossens. "Dissipative instability of the MHD tangential discontinuity in magnetized plasmas with anisotropic viscosity and thermal conductivity". Journal of Plasma Physics 56, n.º 2 (octubre de 1996): 285–306. http://dx.doi.org/10.1017/s0022377800019279.
Texto completoSlobounov, Semyon, Cheng Cao, Niharika Jaiswal y Karl M. Newell. "Neural basis of postural instability identified by VTC and EEG". Experimental Brain Research 199, n.º 1 (5 de agosto de 2009): 1–16. http://dx.doi.org/10.1007/s00221-009-1956-5.
Texto completoFranck Severin Ando, Amalaman. "Milieu Institutionnel, Sexe Et Stabilité Émotionnelle/Névrosisme Chez Des Orphelins Et Enfants Vulnérables Du Fait Du VIH À Abidjan". European Scientific Journal, ESJ 18, n.º 14 (30 de abril de 2022): 116. http://dx.doi.org/10.19044/esj.2022.v18n14p116.
Texto completoAli, Amjad, Ahmad Naveed, Tahir Rasheed, Tariq Aziz, Muhammad Imran, Ze-Kun Zhang, Muhammad Wajid Ullah et al. "Methods for Predicting Ethylene/Cyclic Olefin Copolymerization Rates Promoted by Single-Site Metallocene: Kinetics Is the Key". Polymers 14, n.º 3 (24 de enero de 2022): 459. http://dx.doi.org/10.3390/polym14030459.
Texto completoAktershev, Yuriy, Sergey Vasichev y Vladimir Veremeenko. "Precision Four-Quadrant Current Source Vch-500-12r For Superconducting Solenoids". Siberian Journal of Physics 12, n.º 2 (1 de junio de 2017): 138–41. http://dx.doi.org/10.54362/1818-7919-2017-12-2-138-141.
Texto completoNandi, Abhijit, Manisha, Vandana Solanki, Vishvanath Tiwari, Basavaraj Sajjanar, Muthu Sankar, Mohini Saini, Sameer Shrivastava, S. K. Bhure y Srikant Ghosh. "Protective Efficacy of Multiple Epitope-Based Vaccine against Hyalomma anatolicum, Vector of Theileria annulata and Crimean–Congo Hemorrhagic Fever Virus". Vaccines 11, n.º 4 (21 de abril de 2023): 881. http://dx.doi.org/10.3390/vaccines11040881.
Texto completoRenz, Arne Benjamin Benjamin, Oliver J. Vavasour, Peter Michael Gammon, Fan Li, Tianxiang Dai, Guy W. C. Baker, Nicholas E. Grant et al. "(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality". ECS Meeting Abstracts MA2022-01, n.º 19 (7 de julio de 2022): 1065. http://dx.doi.org/10.1149/ma2022-01191065mtgabs.
Texto completoOrtel, Thomas L., Karen D. Moore, Mirella Ezban y William H. Kane. "Effect of Heterologous Factor V Heavy Chain Sequences on the Secretion of Recombinant Human Factor VIII". Thrombosis and Haemostasis 75, n.º 01 (1996): 036–44. http://dx.doi.org/10.1055/s-0038-1650218.
Texto completoSingh, N. "Space-time evolution of electron-beam driven electron holes and their effects on the plasma". Nonlinear Processes in Geophysics 10, n.º 1/2 (30 de abril de 2003): 53–63. http://dx.doi.org/10.5194/npg-10-53-2003.
Texto completoBesnier, Niko. "Les politiques identitaires entre le local et le global : la mobilisation transgenre aux îles Tonga (Pacifique sud)". Ethnologie française Vol. 54, n.º 1 (26 de febrero de 2024): 117–33. http://dx.doi.org/10.3917/ethn.241.0117.
Texto completoVargas, Carlos Alberto y Hector Andres Tinoco. "Electrical Performance of a Piezo-inductive Device for Energy Harvesting with Low-Frequency Vibrations". Actuators 8, n.º 3 (16 de julio de 2019): 55. http://dx.doi.org/10.3390/act8030055.
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