Artículos de revistas sobre el tema "Undoped Semiconductors"
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Yang, Jin-Peng, Hai-Tao Chen y Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, n.º 24 (28 de junio de 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Texto completoFortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices". Materials Science Forum 514-516 (mayo de 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.
Texto completoMa, Yandong, Ying Dai y Baibiao Huang. "ChemInform Abstract: Ferromagnetism in Undoped Semiconductors". ChemInform 42, n.º 42 (27 de septiembre de 2011): no. http://dx.doi.org/10.1002/chin.201142213.
Texto completoSacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola y Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation". Catalysts 12, n.º 10 (10 de octubre de 2022): 1208. http://dx.doi.org/10.3390/catal12101208.
Texto completoHuang, Danhong, T. Apostolova, P. M. Alsing y D. A. Cardimona. "Thermal-drag carrier cooling in undoped semiconductors". Journal of Applied Physics 98, n.º 6 (15 de septiembre de 2005): 063516. http://dx.doi.org/10.1063/1.2041842.
Texto completoHüsser, O. E., H. von Käanel y F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison". Journal of The Electrochemical Society 132, n.º 4 (1 de abril de 1985): 810–14. http://dx.doi.org/10.1149/1.2113963.
Texto completoHossein-Babaei, Faramarz, Saeed Masoumi y Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors". Measurement Science and Technology 28, n.º 11 (12 de octubre de 2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.
Texto completoBonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors". Physica B: Condensed Matter 170, n.º 1-4 (abril de 1991): 168–80. http://dx.doi.org/10.1016/0921-4526(91)90120-4.
Texto completoVishnyakov, N. V. "Formation of Potential Barriers in Undoped Disordered Semiconductors". Semiconductors 39, n.º 10 (2005): 1147. http://dx.doi.org/10.1134/1.2085261.
Texto completoSikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon y Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach". Molecules 27, n.º 22 (16 de noviembre de 2022): 7923. http://dx.doi.org/10.3390/molecules27227923.
Texto completoSiethoff, H. "Dynamical recovery, dislocation mobility, and diffusion in undoped semiconductors". Physica Status Solidi (a) 138, n.º 2 (16 de agosto de 1993): 591–99. http://dx.doi.org/10.1002/pssa.2211380227.
Texto completoMittova, Irina Ya, Boris V. Sladkopevtsev y Valentina O. Mittova. "Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review". Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 23, n.º 3 (17 de agosto de 2021): 309–36. http://dx.doi.org/10.17308/kcmf.2021.23/3524.
Texto completoAli, Farida Ashraf, Gouranga Bose, Sushanta Kumar Kamilla, Dilip Kumar Mishra y Priyabrata Pattanaik. "Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode". Microelectronics International 36, n.º 4 (7 de octubre de 2019): 143–49. http://dx.doi.org/10.1108/mi-01-2019-0002.
Texto completoWilliams, J. S., Y. Chen, J. Wong-Leung, A. Kerr y M. V. Swain. "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters". Journal of Materials Research 14, n.º 6 (junio de 1999): 2338–43. http://dx.doi.org/10.1557/jmr.1999.0310.
Texto completoSeyidov, MirHasan Yu, Faik A. Mikailzade, Rauf A. Suleymanov, Vafa B. Aliyeva, Tofig G. Mammadov y Galib M. Sharifov. "Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors". Physica B: Condensed Matter 526 (diciembre de 2017): 45–53. http://dx.doi.org/10.1016/j.physb.2017.07.003.
Texto completoChaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing y Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells". Science 365, n.º 6460 (26 de septiembre de 2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.
Texto completoAbdullahi, Sabiu Said, Garba Shehu Musa Galadanci, Norlaily Mohd Saiden y Josephine Ying Chyi Liew. "Assessment of Magnetic Properties between Fe and Ni Doped ZnO Nanoparticles Synthesized by Microwave Assisted Synthesis Method". Solid State Phenomena 317 (mayo de 2021): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.119.
Texto completoWu, Meirong, Zhiqiang Wei, Wenhua Zhao, Xuan Wang y Jinlong Jiang. "Optical and Magnetic Properties of Ni Doped ZnS Diluted Magnetic Semiconductors Synthesized by Hydrothermal Method". Journal of Nanomaterials 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/1603450.
Texto completoPEARTON, S. J. "HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON". International Journal of Modern Physics B 08, n.º 09 (20 de abril de 1994): 1093–158. http://dx.doi.org/10.1142/s0217979294000543.
Texto completoKim, Chang-Hyun. "Bulk versus Contact Doping in Organic Semiconductors". Micromachines 12, n.º 7 (24 de junio de 2021): 742. http://dx.doi.org/10.3390/mi12070742.
Texto completoHeng, Chenglin, Xuan Wang, Chaonan Zhao, Gang Wu, Yanhui Lv, Hanchun Wu, Ming Zhao y Terje G. Finstad. "Ultrathin Rare-Earth-Doped MoS2 Crystalline Films Prepared with Magnetron Sputtering and Ar + H2 Post-Annealing". Crystals 13, n.º 2 (13 de febrero de 2023): 308. http://dx.doi.org/10.3390/cryst13020308.
Texto completoFreitas, Jr., J. A. y W. J. Moore. "Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors". Brazilian Journal of Physics 28, n.º 1 (marzo de 1998): 12–18. http://dx.doi.org/10.1590/s0103-97331998000100002.
Texto completoSato, Shin-ichiro, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki y Michio Kondo. "Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 285 (agosto de 2012): 107–11. http://dx.doi.org/10.1016/j.nimb.2012.05.010.
Texto completoAppelbaum, Ian. "Introduction to spin-polarized ballistic hot electron injection and detection in silicon". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, n.º 1951 (28 de septiembre de 2011): 3554–74. http://dx.doi.org/10.1098/rsta.2011.0137.
Texto completoHossein-Babaei, Faramarz y S. Masoumi. "Electrical Resistance and Seebeck Effect in Undoped Polycrystalline Zinc Oxide". Key Engineering Materials 605 (abril de 2014): 185–88. http://dx.doi.org/10.4028/www.scientific.net/kem.605.185.
Texto completoKnupfer, M. y G. Paasch. "Origin of the interface dipole at interfaces between undoped organic semiconductors and metals". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, n.º 4 (julio de 2005): 1072–77. http://dx.doi.org/10.1116/1.1885021.
Texto completoArslanov, R. K., M. I. Daunov y U. Z. Zalibekov. "Impurity energy spectrum in undoped dilute magnetic p-InAs semiconductors at hydrostatic pressures". Herald of Dagestan State University 33, n.º 2 (2018): 51–56. http://dx.doi.org/10.21779/2542-0321-2018-33-2-51-56.
Texto completoPERAKIS, I. E. y T. V. SHAHBAZYAN. "CANONICAL TRANSFORMATION APPROACH TO THE ULTRAFAST NONLINEAR OPTICAL DYNAMICS OF SEMICONDUCTORS". International Journal of Modern Physics B 13, n.º 08 (30 de marzo de 1999): 869–93. http://dx.doi.org/10.1142/s0217979299000734.
Texto completoБогацкая, А. В., Н. В. Кленов, П. М. Никифорова, А. М. Попов y А. Е. Щеголев. "Резонансное болометрическое детектирование широкополосных сигналов терагерцевого диапазона частот". Письма в журнал технической физики 47, n.º 17 (2021): 50. http://dx.doi.org/10.21883/pjtf.2021.17.51388.18850.
Texto completoGherras, Hamou, Ahmed Yahiaoui, Aicha Hachemaoui, Abdelkader Belfedal, Abdelkader Dehbi y Andreas Zeinert. "Synthesis and characterization of poly(pyrrole-co-2-nitrocinnamaldehyde) (PPNC), a new copolymer for solar cells applications". Polymers and Polymer Composites 28, n.º 4 (9 de septiembre de 2019): 265–72. http://dx.doi.org/10.1177/0967391119872876.
Texto completoAbdellaziz, I., I. Mellouki, S. Abroug y N. Yacoubi. "Photopyroelectric back detection configuration for thermal diffusivity measurement of undoped and doped GaSb semiconductors". IOP Conference Series: Materials Science and Engineering 28 (7 de febrero de 2012): 012001. http://dx.doi.org/10.1088/1757-899x/28/1/012001.
Texto completoKozlov, R. Yu, S. S. Kormilitsina, E. V. Molodtsova y E. O. Zhuravlev. "Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method". Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 24, n.º 3 (21 de septiembre de 2021): 190–98. http://dx.doi.org/10.17073/1609-3577-2021-3-190-198.
Texto completoHuang, Menglin, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei y Shiyou Chen. "DASP: Defect and Dopant ab-initio Simulation Package". Journal of Semiconductors 43, n.º 4 (1 de abril de 2022): 042101. http://dx.doi.org/10.1088/1674-4926/43/4/042101.
Texto completoREDFIELD, DAVID. "DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL". Modern Physics Letters B 05, n.º 14n15 (junio de 1991): 933–39. http://dx.doi.org/10.1142/s0217984991001167.
Texto completoGaied, Imen, Salima Lassoued, Fredéric Genty y Noureddine Yacoubi. "New Photothermal Deflection Method to Determine Thermal Properties of Bulk Semiconductors". Defect and Diffusion Forum 297-301 (abril de 2010): 525–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.525.
Texto completoKozlov, Roman Yu, Svetlana S. Kormilitsina, Elena V. Molodtsova y Eugene O. Zhuravlev. "Growth of 100 mm indium antimonide single crystals by modified Czochralski technique". Modern Electronic Materials 7, n.º 2 (30 de junio de 2021): 73–78. http://dx.doi.org/10.3897/j.moem.7.2.76286.
Texto completoKao, Chyuan-Haur, Chia-Shao Liu, Shih-Ming Chan, Chih-Chen Kuo, Shang-Che Tsai, Ming-Ling Lee y Hsiang Chen. "Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane". Membranes 11, n.º 12 (20 de diciembre de 2021): 994. http://dx.doi.org/10.3390/membranes11120994.
Texto completoGan, Zhaofeng, Michael DiNezza, Yong-Hang Zhang, David J. Smith y Martha R. McCartney. "Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination". Microscopy and Microanalysis 21, n.º 6 (27 de noviembre de 2015): 1406–12. http://dx.doi.org/10.1017/s1431927615015378.
Texto completoWANG, HAI-BIN, PING PENG, YUAN-HONG TANG, DAN WANG y LI-MING TANG. "TUNING THE "d0" FERROMAGNETISM IN In2O3 QUANTUM DOTS BY DANGLING BONDS AND VACANCY BASED ON THE FIRST-PRINCIPLE CALCULATION". Modern Physics Letters B 27, n.º 10 (26 de marzo de 2013): 1350068. http://dx.doi.org/10.1142/s0217984913500681.
Texto completoFink, J. "Electronic structure studies of conducting polymers by electron energy-loss spectroscopy". Proceedings, annual meeting, Electron Microscopy Society of America 54 (11 de agosto de 1996): 160–61. http://dx.doi.org/10.1017/s0424820100163265.
Texto completoHasan, Sayedul, Mohammad Tanvir Ahmed, Abdullah Al Roman, Shariful Islam y Farid Ahmed. "Investigation of Structural, Electronic, and Optical Properties of Chalcogen-Doped ZrS2: A DFT Analysis". Advances in Materials Science and Engineering 2023 (23 de febrero de 2023): 1–10. http://dx.doi.org/10.1155/2023/6525507.
Texto completoLin, Der Yuh, Tung Pai Huang, Fan Lei Wu, Chih Ming Lin, Ying Sheng Huang y Kwong Kau Tiong. "Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au". Solid State Phenomena 170 (abril de 2011): 135–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.170.135.
Texto completoScarfone, Leonard M. "Erratum: Thomas-Fermi-Dirac statistical theory of dispersive dielectric screening in undoped semiconductors at zero temperature". Physical Review B 32, n.º 4 (15 de agosto de 1985): 2653–55. http://dx.doi.org/10.1103/physrevb.32.2653.
Texto completoIkenoue, Takumi, Satoshi Yoneya, Masao Miyake y Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method". MRS Advances 5, n.º 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.
Texto completoPan, Yongman, Yinzhou Yan, Qiang Wang, Lixue Yang, Xuegang Zhang, Long Tang, Cheng Xing, Fei Chen y Yijian Jiang. "Efficient defect control of zinc vacancy in undoped ZnO microtubes for optoelectronic applications". Journal of Applied Physics 131, n.º 10 (14 de marzo de 2022): 105105. http://dx.doi.org/10.1063/5.0077884.
Texto completoSiyar, Muhammad, Jun-Young Cho, Woo-Chan Jin, Euy Heon Hwang, Miyoung Kim y Chan Park. "Thermoelectric Properties of Cu2SnSe3-SnS Composite". Materials 12, n.º 13 (26 de junio de 2019): 2040. http://dx.doi.org/10.3390/ma12132040.
Texto completoMathur, Arpit Swarup, Praveen Kumar y B. P. Singh. "Comparative study of absorption band edge tailoring by cationic and anionic doping in TiO2". Materials Science-Poland 36, n.º 3 (1 de septiembre de 2018): 435–38. http://dx.doi.org/10.2478/msp-2018-0060.
Texto completoWang, Yanping, Qian Duan, Qingcheng Liang, Gongzheng Yan, Dezhi Yang y Dongge Ma. "A comparative investigation of electron transport properties in Li2CO3 doped and undoped organic semiconductors by admittance spectroscopy". Organic Electronics 66 (marzo de 2019): 58–62. http://dx.doi.org/10.1016/j.orgel.2018.12.019.
Texto completoKabalbin, A. N., V. B. Neimash, V. M. Tsmots’ y V. S. Shtym. "Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 .March 1998]". Semiconductors 32, n.º 8 (agosto de 1998): 916. http://dx.doi.org/10.1134/1.1187348.
Texto completoChandramohan, D. y S. Balasubramanian. "Comment on "Thomas-Fermi-Dirac statistical theory of dispersive dielectric screening in undoped semiconductors at zero temperature"". Physical Review B 33, n.º 12 (15 de junio de 1986): 8782–84. http://dx.doi.org/10.1103/physrevb.33.8782.
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