Literatura académica sobre el tema "Undoped Semiconductors"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "Undoped Semiconductors".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Artículos de revistas sobre el tema "Undoped Semiconductors"
Yang, Jin-Peng, Hai-Tao Chen y Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, n.º 24 (28 de junio de 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Texto completoFortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices". Materials Science Forum 514-516 (mayo de 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.
Texto completoMa, Yandong, Ying Dai y Baibiao Huang. "ChemInform Abstract: Ferromagnetism in Undoped Semiconductors". ChemInform 42, n.º 42 (27 de septiembre de 2011): no. http://dx.doi.org/10.1002/chin.201142213.
Texto completoSacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola y Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation". Catalysts 12, n.º 10 (10 de octubre de 2022): 1208. http://dx.doi.org/10.3390/catal12101208.
Texto completoHuang, Danhong, T. Apostolova, P. M. Alsing y D. A. Cardimona. "Thermal-drag carrier cooling in undoped semiconductors". Journal of Applied Physics 98, n.º 6 (15 de septiembre de 2005): 063516. http://dx.doi.org/10.1063/1.2041842.
Texto completoHüsser, O. E., H. von Käanel y F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison". Journal of The Electrochemical Society 132, n.º 4 (1 de abril de 1985): 810–14. http://dx.doi.org/10.1149/1.2113963.
Texto completoHossein-Babaei, Faramarz, Saeed Masoumi y Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors". Measurement Science and Technology 28, n.º 11 (12 de octubre de 2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.
Texto completoBonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors". Physica B: Condensed Matter 170, n.º 1-4 (abril de 1991): 168–80. http://dx.doi.org/10.1016/0921-4526(91)90120-4.
Texto completoVishnyakov, N. V. "Formation of Potential Barriers in Undoped Disordered Semiconductors". Semiconductors 39, n.º 10 (2005): 1147. http://dx.doi.org/10.1134/1.2085261.
Texto completoSikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon y Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach". Molecules 27, n.º 22 (16 de noviembre de 2022): 7923. http://dx.doi.org/10.3390/molecules27227923.
Texto completoTesis sobre el tema "Undoped Semiconductors"
Mak, Wing Yee. "Transport experiments in undoped GaAs/A1GaAs heterostructures". Thesis, University of Cambridge, 2013. https://www.repository.cam.ac.uk/handle/1810/252296.
Texto completoAnandan, C. "Metal contacts to undoped a-Si:H: interface modification and Scottky barrier characteristics". Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.
Texto completoHui, Chun-wai. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal". Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.
Texto completoMa, Shun-kit Martin. "The two gallium vacancy-related defects in undoped gallium antimonide". Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.
Texto completoHui, Chun-wai y 許俊偉. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.
Texto completoMa, Shun-kit Martin y 馬信傑. "The two gallium vacancy-related defects in undoped gallium antimonide". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.
Texto completoChen, Shing Rong y 陳祥榮. "Temperature Influence on The Energy Band Gap and The Fermi Level for Undoped Semiconductors". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/35616353767997301313.
Texto completo中原大學
應用物理學系
82
A detail fitting method of the metastable semiconductors alloys presented.Alloy composition and temperature are simul- taneously considered together by combined empirical formula of composition and modified temperature terms. This fitting method is based on the least-square technique scheme,and therefore, necessitates known values of the experi- mental data for the related binaries at two ends (for composi- tion;X=0 and X=1) of ternary alloy,which taken as the input data during performing iteration processes.One can decide quantitily that the resultant value of the bowing parameter for band gap is temperature dependence also. If one hopes to study temperature influences on the fermi leevel,it is necessary to calculate the ratio of effective mass of hole and electron at the band edges. In conclusion,it found that temperature influence on the half of the energy band gap and the fermi level for undoped semiconductors are similar to each other.
Lawless, Darren. "Photophysical studies on ultra-small semiconductor particles : CdS quantum dots, doped and undoped TiO₂2, and silver halides". Thesis, 1993. http://spectrum.library.concordia.ca/6080/1/NN84678.pdf.
Texto completoRay, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective". Thesis, 2008. https://etd.iisc.ac.in/handle/2005/741.
Texto completoRay, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective". Thesis, 2008. http://hdl.handle.net/2005/741.
Texto completoCapítulos de libros sobre el tema "Undoped Semiconductors"
Tříska, Aleš, Jan Kočka y Milan Vanĕček. "Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy". En Disordered Semiconductors, 459–68. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_50.
Texto completoYu, P. W. "Persistent Photoluminescence Quenching Effect of 0.77-eV Emission in Undoped Semi-Insulating GaAs". En Proceedings of the 17th International Conference on the Physics of Semiconductors, 747–50. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_166.
Texto completoHickmott, T. W., P. M. Solomon, F. F. Fang, R. Fischer y H. Morkoç. "Magnetotunneling and Magnetic Freezeout in n-GaAs-Undoped AlxGa1-xAs-n+GaAs Capacitors". En Proceedings of the 17th International Conference on the Physics of Semiconductors, 417–20. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_92.
Texto completoBonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors". En Hydrogen in Semiconductors, 168–80. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50022-x.
Texto completoTang, X. M., J. Weber, Y. Baer y F. Finger. "The dispersive diffusion of hydrogen in undoped a-Si:H". En Hydrogen in Semiconductors, 146–48. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50019-x.
Texto completoDeák, P., L. C. Snyder, M. Heinrich, C. R. Ortiz y J. W. Corbett. "Hydrogen complexes and their vibrations in undoped crystalline silicon". En Hydrogen in Semiconductors, 253–58. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50035-8.
Texto completoEPPERLEIN, P. W. y H. P. MEIER. "IMPURITY TRAPPING IN NOMINALLY UNDOPED GaAs/AIGaAs QUANTUM WELLS". En Defect Control in Semiconductors, 1223–28. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-444-88429-9.50045-8.
Texto completoMarzouki, Riadh. "The Cuprate Ln2CuO4 (Ln: Rare Earth): Synthesis, Crystallography, and Applications". En Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109193.
Texto completoLabidi, H., K. Zellama, P. Germain, M. Astier, D. Lortigues, J. V. Bardeleben, M. L. Theye, L. Chahed y C. Godet. "Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon". En Hydrogen in Semiconductors, 265–68. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50037-1.
Texto completoRudolph, P., S. Kawasaki, S. Yamashita, S. Yamamoto, Y. Usuki, Y. Konagaya, S. Matada y T. Fukuda. "Attempts to growth of undoped CdTe single crystals with high electrical resistivity". En Selected Topics in Group IV and II–VI Semiconductors, 28–33. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50095-4.
Texto completoActas de conferencias sobre el tema "Undoped Semiconductors"
Gupta, K. Das, W. Y. Mak, F. Sfigakis, H. E. Beere, I. Farrer, D. A. Ritchie, Jisoon Ihm y Hyeonsik Cheong. "Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666389.
Texto completoSee, Andrew M., Oleh Klochan, Adam P. Micolich, Alex R. Hamilton, Martin Aagesen, Poul E. Lindelof, Jisoon Ihm y Hyeonsik Cheong. "Fabrication of Undoped AlGaAs∕GaAs Electron Quantum Dots". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666394.
Texto completoNomura, S. "Negatively charged excitons in a back-gated undoped heterostructure". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994524.
Texto completoTomimoto, Shinichi, Shinsuke Nozawa, Hiroyuki Kato, Michihiro Sano, Takahiro Matsumoto, Yasuaki Masumoto, Jisoon Ihm y Hyeonsik Cheong. "Optical electron spin orientation in Ga-doped and undoped ZnO films". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666581.
Texto completoLilly, M. P. "Weak localization of dilute 2D electrons in undoped GaAs heterostructures". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994179.
Texto completoEldridge, P. S., W. J. H. Leyland, J. D. Mar, P. G. Lagoudakis, R. Winkler, O. Z. Karimov, M. Henini et al. "The Absence Of The Rashba Spin-Splitting In Undoped Asymmetric Quantum Wells". En PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295469.
Texto completoIkonnikov, A. V. "Cyclotron Resonance Study of Doped and Undoped InAs/AlSb QW Heterostructures". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994549.
Texto completoHarris, T. D. y J. I. Colonell. "Quantitative Fluorescence Determination of Impurities in Compound Semiconductors". En Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.tub1.
Texto completoOzaki, N. "Magnetic Properties of undoped and N-doped Zn1−xCrxTe Grown by MBE". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994130.
Texto completoHalas, N. J., R. A. Cheville, F. L. P. Chibante, T. R. Ohno y J. H. Weaver. "Carrier relaxation in undoped C60 solid films". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thdd4.
Texto completoInformes sobre el tema "Undoped Semiconductors"
Lu, Tzu-Ming y Lisa A. Tracy. Artificial Graphene in Undoped Semiconductor Heterostructures. Office of Scientific and Technical Information (OSTI), septiembre de 2016. http://dx.doi.org/10.2172/1562617.
Texto completo