Literatura académica sobre el tema "Ultra-violet (UV) photodetectors"
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Artículos de revistas sobre el tema "Ultra-violet (UV) photodetectors"
Jacob, Anju Anna, L. Balakrishnan, S. R. Meher, K. Shambavi y Z. C. Alex. "Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis". International Journal of Nanoscience 17, n.º 01n02 (12 de octubre de 2017): 1760015. http://dx.doi.org/10.1142/s0219581x17600158.
Texto completoYing, Haoting, Xin Li, Yutong Wu, Yi Yao, Junhua Xi, Weitao Su, Chengchao Jin, Minxuan Xu, Zhiwei He y Qi Zhang. "High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes". Nanoscale Advances 1, n.º 10 (2019): 3973–79. http://dx.doi.org/10.1039/c9na00471h.
Texto completoDe Souza, Michelly, Olivier Bulteel, Denis Flandre y Marcelo Antonio Pavanello. "Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths". Journal of Integrated Circuits and Systems 6, n.º 2 (27 de diciembre de 2011): 107–13. http://dx.doi.org/10.29292/jics.v6i2.346.
Texto completoLee, Youngmin, Soo Youn Kim, Deuk Young Kim y Sejoon Lee. "Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure". Nanomaterials 10, n.º 8 (29 de julio de 2020): 1486. http://dx.doi.org/10.3390/nano10081486.
Texto completoAjmal, Hafiz Muhammad Salman, Fasihullah Khan, Noor Ul Huda, Sunjung Lee, Kiyun Nam, Hae Young Kim, Tae-Hyong Eom y Sam Dong Kim. "High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates". Nanomaterials 9, n.º 8 (25 de julio de 2019): 1067. http://dx.doi.org/10.3390/nano9081067.
Texto completoFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Texto completoBiondo, Stéphane, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, R. Daineche, Dominique Planson, F. Milesi, J. Duchaine y Franck Torregrosa. "Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour". Materials Science Forum 711 (enero de 2012): 114–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.114.
Texto completoLi, Bin, Jin Wei Liu, Hao Luo, Chao Yu Feng y Xiao Xiao Duan. "The Warning Measurement System of Erythema Time with Ultra Violet Photodevice and Properties of Biological Filtration Materials". Advanced Materials Research 643 (enero de 2013): 9–12. http://dx.doi.org/10.4028/www.scientific.net/amr.643.9.
Texto completoAli, A. M., A. S. Mohammed y S. M. Hanfoosh. "The spectral responsivity enhancement for gallium-doped CdO/PS heterojunction for UV detector". Journal of Ovonic Research 17, n.º 3 (mayo de 2021): 239–45. http://dx.doi.org/10.15251/jor.2021.173.239.
Texto completoAlqanoo, Anas A. M., Naser M. Ahmed, Md R. Hashim, Munirah A. Almessiere, Sofyan A. Taya, Ahmed Alsadig, Osamah A. Aldaghri y Khalid Hassan Ibnaouf. "Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector". Nanomaterials 13, n.º 2 (15 de enero de 2023): 353. http://dx.doi.org/10.3390/nano13020353.
Texto completoTesis sobre el tema "Ultra-violet (UV) photodetectors"
Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV". Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.
Texto completoSilicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
Kalra, Anisha. "Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics". Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5585.
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